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Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices

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Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2012 Design And Characterization Of High Temperature Packaging For Wide-bandgap Semiconductor Devices Brian Grummel University of Central Florida Part of the Electrical and Electronics Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Doctoral Dissertation (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Grummel, Brian, "Design And Characterization Of High Temperature Packaging For Wide-bandgap Semiconductor Devices" (2012). Electronic Theses and Dissertations, 2004-2019. 2495. https://stars.library.ucf.edu/etd/2495 DESIGN AND CHARACTERIZATION OF HIGH-TEMPERATURE PACKAGING FOR WIDE-BANDGAP SEMICONDUCTOR DEVICES by BRIAN J. GRUMMEL B.S.E.E. University of Central Florida, 2007 M.S.E.E. University of Central Florida, 2008 A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Department of Electrical Engineering and Computer Science in the College of Engineering and Computer Science at the University of Central Florida Orlando, Florida Fall Term 2012 Major Professor: Z. John Shen © 2012 Brian J. Grummel ii ABSTRACT Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively investigated and characterized to assess its viability for high-temperature power electronics applications. The reliability and durability of TLP die-attach was extensively investigated utilizing electrical resistivity measurement as an indicator of material diffusion in gold-indium TLP samples. Criteria of ensuring diffusive stability were also developed. Samples were fabricated by material deposition on glass substrates with variant Au–In compositions but identical barrier layers. They were stressed with thermal cycling to simulate their operating conditions then characterized and compared. Excess indium content in the die-attach was shown to have poor reliability due to material diffusion through barrier layers while samples containing suitable indium content proved reliable throughout the thermal cycling process. This was confirmed by electrical resistivity measurement, EDS, FIB, and SEM characterization. Thermal and mechanical characterization of TLP die-attached samples was also performed to gain a newfound understanding of the relationship between TLP design parameters and die-attach properties. Samples with a SiC diode chip TLP bonded to a copper metalized silicon nitride iii substrate were made using several different values of fabrication parameters such as gold and indium thickness, Au–In ratio, and bonding pressure. The TLP bonds were then characterized for die-attach voiding, shear strength, and thermal impedance. It was found that TLP die-attach offers high average shear force strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction to the substrate. The influence of various fabrication parameters on the bond characteristics were also compared, providing information necessary for implementing TLP die-attach into power electronic modules for high-temperature applications. The outcome of the investigation on TLP bonding techniques was incorporated into a new power module design utilizing TLP bonding. A full half-bridge inverter power module for low-power space applications has been designed and analyzed with extensive finite element thermo- mechanical modeling. In summary, TLP die-attach has investigated to confirm its reliability and to understand how to design effective TLP bonds, this information has been used to design a new high-temperature power electronic module. iv This dissertation is dedicated to my family. v ACKNOWLEDGMENTS I would like to first thank my incredible advisor Dr. Z. John Shen who has mentored me since I knocked on his door as an undergraduate looking for research work after taking his semiconductor devices class. He welcomed me in and has guided, advised, and supported me through the field of power semiconductors ever since. I would also like to thank Dr. Habib Mustain who has also advised me and directed me toward SiC devices and TLP die-attach. He has been invaluable in assisting me in my research. Also, I would also like to thank Dr. Allen Hefner whom I have worked with since he asked me to come and work with him at the National Institute of Standards and Technology on power devices some years ago and has supported me since. I also thank my committee members Dr. Ali Gordon, Dr. Kalpathy Sundaram, and Dr. Jiann-Shiun Peter Yuan who have provided me value invaluable feedback and guidance. Thank you also to the many talented people I have worked with at the University of Central Florida and NIST including Patrick Shea, Boyi Yang, Karthik Padmanabhan, Gourab Sabui, Shan Sun, Jian Lu, Xuexin Wang, Matt Landowski, Yali Xiong, Madelaine Hernandez- Mora, Jose Ortiz, Colleen Hood, Tam Duong, and many others. Finally, my family has been unwavering in their support of me over the many years I have been pursuing my degrees and I am eternally thankful for them all, including my fiancé Brittany, my Mom, my Dad, my Sister Jill, Jason, Darlene, Marsha, and many, many others. Every day they have stood behind me and pushed me and motivated me and I cannot think of where I would be without them nor can I thank them enough. Thank you all. vi TABLE OF CONTENTS LIST OF FIGURES ........................................................................................................................ x LIST OF TABLES ...................................................................................................................... xvii LIST OF ABBREVIATIONS .................................................................................................... xviii LIST OF VARIABLES................................................................................................................ xix CHAPTER 1: INTRODUCTION ................................................................................................... 1 1.1 Motivation ............................................................................................................... 1 1.2 Statement of Benefit ............................................................................................... 3 1.3 Wide-Bandgap Semiconductors .............................................................................. 4 1.4 High-Temperature Power Electronic Applications ............................................... 15 CHAPTER 2: REVIEW OF HIGH-TEMPERATURE PACKAGING PRIOR ART .................. 21 2.1 Conventional Power Module ................................................................................ 21 2.2 Advanced Power Module Designs ........................................................................ 33 2.3 Electronic Cooling Systems .................................................................................. 38 2.4 High-Temperature Die-Attach .............................................................................. 42 2.5 Summary ............................................................................................................... 48 CHAPTER 3: INTRODUCTION TO TRANSIENT LIQUID PHASE DIE-ATTACH .............. 49 3.1 TLP Bonding Process Overview ........................................................................... 49 3.2 Material System Requirements ............................................................................. 54 vii 3.3 Advantages and Limitations of TLP Die-Attach .................................................. 63 CHAPTER 4: OBJECTIVES ........................................................................................................ 66 4.1 Investigation of Thermal and Mechanical Properties of TLP Die-Attach ............ 67 4.2 Resistive, Diffusive, and Thermal Analysis of TLP Reliability and Durability ... 67 4.3 Design and Simulation of High-Temperature Power Electronic Module ............. 67 CHAPTER 5: INVESTIGATION OF THERMAL AND MECHANICAL PROPERTIES OF TLP DIE-ATTACH ...................................................................................................................... 69 5.1 TLP Fabrication Parameters ................................................................................. 69 5.2 Sample Fabrication Process .................................................................................. 71 5.3 Die-Attach Percentage .......................................................................................... 73 5.4 Thermal Impedance .............................................................................................. 77 5.5 Shear Strength and Force .....................................................................................
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