Creating Value from Non-Carbon 2D Materials
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Effects of Metal Contacts and Doping for High
TW-P061 Effects of metal contacts and doping for high-performance field-effect transistor based on tungsten diselenide (WSe2) Seo-Hyeon Jo and Jin-Hong Park School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. -
Tungsten Disulfide: a Novel Hydrogen Evolution Catalyst for Water Decomposition Andrzej Sobczynski, Attila Yildiz, Allen J
Subscriber access provided by University of Texas Libraries Tungsten disulfide: a novel hydrogen evolution catalyst for water decomposition Andrzej Sobczynski, Attila Yildiz, Allen J. Bard, Alan Campion, Marye Anne Fox, Thomas Mallouk, Stephen E. Webber, and John M. White J. Phys. Chem., 1988, 92 (8), 2311-2315 • DOI: 10.1021/j100319a042 Downloaded from http://pubs.acs.org on February 2, 2009 More About This Article The permalink http://dx.doi.org/10.1021/j100319a042 provides access to: • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article The Journal of Physical Chemistry is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 J. Phys. Chem. 1988, 92, 2311-2315 2311 Tungsten Dlsulflde: A Novel Hydrogen Evolution Catalyst for Water Decomposition Andrzej Sobczynski; Attila Yildiz,* Allen J. Bard, Alan Campion, Marye Anne Fox, Thomas Mallouk, Stephen E. Webber, and John M. White* Department of Chemistry, University of Texas, Austin, Texas 78712 (Received: July 27, 1987: In Final Form: November 24, 1987) Silica-supported tungsten disulfide was prepared by the reaction of W03/Si02with H2S at 300 OC. The WS2 hexagonal structure was confirmed by X-ray diffraction analysis. AES and XPS studies show the existence of residual tungsten oxides in addition to WS2. Hydrogen evolution properties of WS2/Si02were determined by catalytic and photocatalytic (in the presence of fluorescein or CdS as sensitizers) tests and by electrochemical measurements. These were compared with silica-supported platinum. Although a graphite electrode immersed in a Pt/Si02 slurry evolved hydrogen at a more positive applied potential than in a WS2/Si02slurry, silica-supported tungsten disulfide was more active and stable than Pt/Si02 for catalytic hydrogen production both in the dark and under visible light illumination (with cadmium sulfide as a sensitizer). -
Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides
Lawrence Berkeley National Laboratory Recent Work Title Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides. Permalink https://escholarship.org/uc/item/5131q4m6 Journal Scientific reports, 9(1) ISSN 2045-2322 Authors Chen, Christopher T Pedrini, Jacopo Gaulding, E Ashley et al. Publication Date 2019-02-26 DOI 10.1038/s41598-019-39115-3 Peer reviewed eScholarship.org Powered by the California Digital Library University of California www.nature.com/scientificreports OPEN Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Received: 17 September 2018 Accepted: 17 January 2019 Conversion of ALD Metal Oxides Published: xx xx xxxx Christopher T. Chen 1, Jacopo Pedrini2, E. Ashley Gaulding3, Christoph Kastl1, Giuseppe Calafore1, Scott Dhuey1, Tevye R. Kuykendall1, Stefano Cabrini1, Francesca M. Toma 3, Shaul Aloni1 & Adam M. Schwartzberg1 Materials for nanophotonic devices ideally combine ease of deposition, very high refractive index, and facile pattern formation through lithographic templating and/or etching. In this work, we present a scalable method for producing high refractive index WS2 layers by chemical conversion of WO3 synthesized via atomic layer deposition (ALD). These conformal nanocrystalline thin flms demonstrate a surprisingly high index of refraction (n > 3.9), and structural fdelity compatible with lithographically defned features down to ~10 nm. Although this process yields highly polycrystalline flms, the optical constants are in agreement with those reported for single crystal bulk WS2. Subsequently, we demonstrate three photonic structures - frst, a two-dimensional hole array made possible by patterning and etching an ALD WO3 thin flm before conversion, second, an analogue of the 2D hole array frst patterned into fused silica before conformal coating and conversion, and third, a three- dimensional inverse opal photonic crystal made by conformal coating of a self-assembled polystyrene bead template. -
Thesis Submitted for the Degree of Doctor of Philosophy
University of Bath PHD Development of Single-Source CVD Precursors for Group IV, V and VI Metal Disulfides Thompson, Joseph Award date: 2017 Awarding institution: University of Bath Link to publication Alternative formats If you require this document in an alternative format, please contact: [email protected] General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Download date: 11. Oct. 2021 Development of Single-Source CVD Precursors for Group IV, V and VI Metal Disulfides Joseph Robert Thompson A thesis submitted for the degree of Doctor of Philosophy University of Bath Department of Chemistry October 2016 COPYRIGHT Attention is drawn to the fact that copyright of this thesis/portfolio rests with the author and copyright of any previously published materials included may rest with third parties. A copy of this thesis/portfolio has been supplied on condition that anyone who consults it understands that they must not copy it or use material from it except as permitted by law or with the consent of the author or other copyright owners, as applicable. -
Transition Metal Dichalcogenide Metamaterials with Atomic Precision
ARTICLE https://doi.org/10.1038/s41467-020-18428-2 OPEN Transition metal dichalcogenide metamaterials with atomic precision Battulga Munkhbat 1, Andrew B. Yankovich 1, Denis G. Baranov 1,2, Ruggero Verre1, Eva Olsson 1 & ✉ Timur O. Shegai 1 The ability to extract materials just a few atoms thick has led to the discoveries of graphene, monolayer transition metal dichalcogenides (TMDs), and other important two-dimensional 1234567890():,; materials. The next step in promoting the understanding and utility of flatland physics is to study the one-dimensional edges of these two-dimensional materials as well as to control the edge-plane ratio. Edges typically exhibit properties that are unique and distinctly different from those of planes and bulk. Thus, controlling the edges would allow the design of materials with combined edge-plane-bulk characteristics and tailored properties, that is, TMD meta- materials. However, the enabling technology to explore such metamaterials with high pre- cision has not yet been developed. Here we report a facile and controllable anisotropic wet etching method that allows scalable fabrication of TMD metamaterials with atomic precision. We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are nearly atomically sharp and exclusively zigzag-terminated. This results in hexagonal nanostructures of predefined order and complexity, including few-nanometer-thin nanoribbons and nanojunctions. Thus, this method enables future studies of a broad range of TMD metamaterials through atomically precise control of the structure. 1 Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden. 2 Center for Photonics and 2D Materials, Moscow Institute of ✉ Physics and Technology, Dolgoprudny 141700, Russia. -
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Nanoscale View Article Online PAPER View Journal | View Issue Large-area tungsten disulfide for ultrafast photonics Cite this: Nanoscale, 2017, 9, 1871 Peiguang Yan,*a Hao Chen,a Jinde Yin,a Zihan Xu,b Jiarong Li,a Zike Jiang,a Wenfei Zhang,a Jinzhang Wang,a Irene Ling Li,a Zhipei Sunc and Shuangchen Ruan*a Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted significant interest in various optoelectronic applications due to their excellent nonlinear optical properties. One of the most important applications of TMDs is to be employed as an extraordinary optical modulation material (e.g., the saturable absorber (SA)) in ultrafast photonics. The main challenge arises while embedding TMDs into fiber laser systems to generate ultrafast pulse trains and thus constraints their practical applications. Herein, few-layered WS2 with a large-area was directly transferred on the facet of the pigtail and acted as a SA for erbium-doped fiber laser (EDFL) systems. In our study, WS2 SA exhibited remarkable nonlinear optical properties (e.g., modulation depth of 15.1% and saturable intensity of 157.6 MW cm−2) and was Creative Commons Attribution 3.0 Unported Licence. used for ultrafast pulse generation. The soliton pulses with remarkable performances (e.g., ultrashort pulse duration of 1.49 ps, high stability of 71.8 dB, and large pulse average output power of 62.5 mW) Received 25th November 2016, could be obtained in a telecommunication band. To the best of our knowledge, the average output Accepted 29th December 2016 power of the mode-locked pulse trains is the highest by employing TMD materials in fiber laser systems. -
The Preparation and Properties of Tase2 Single Crystal
International Journal of Physics and Mathematical Sciences ISSN: 2277-2111 (Online) An Open Access, Online International Journal Available at http://www.cibtech.org/jpms.htm 2016 Vol. 6 (1) January-March, pp. 11-16/Patel and Lakhataria. Research Article SYNTHESIS AND STRUCTURAL ANALYSIS OF NBSE2 SINGLE CRYSTALS *Kaushik R Patel1 and Duhita Lakhataria2 1Biogas Research Center, Mahadevbhai Desai Gramseva Mahavidhyalaya, Gujarat Vidyapith, Sadra 382 320 2Government Polytechnique College, Amadavad *Author for Correspondence ABSTRACT The transition metal dichalcogenides NbS2 and NbSe2 are layer compounds consisting of sandwiches with strong covalent/ionic intra layer bonds and weak Van der Waals interlayer interactions. The NbSe2 single crystals were grown by chemical vapour transport technique (CVT) using iodine as transporting agent. The chemical compositions of the grown crystals were confirmed with the help of energy dispersive analysis by X-ray (EDAX). The structural properties were studied by X- ray diffraction analysis (XRD). The crystals were found to possess hexagonal crystal structure. The lattice parameters, unit cell volume, grain size and X-ray density were computed for this crystal. The results obtained are discussed in detail. Keywords: Crystal Growth, Semiconductor, EDAX, XRD, Lattice Parameters PACS Nos.: 61.50.Nw, 61.10.Nz, 81.40.Tv INTRODUCTION The transition metal dichalcogenides, NbS2 and NbSe2 are layered compounds consisting of sandwiches with strong covalent/ionic intra layer bonds and weak van der Waals interlayer interactions. The stacking sequence of S and Nb are AcA BcB (2H- NbS2 structure) or AbA BcB CaC (3R- MoS2 structure) for NbSe2 several more stacking sequences exist (Lieth et al., 1977; Boswell et al., 1976; Harper, 1977). -
Exploring Optoelectronics Potential of Monolayer Tungsten Diselenide
60 Technical focus: Optoelectronics Exploring optoelectronics potential of monolayer tungsten diselenide Three groups have recently reported on preliminary experiments with photovoltaic and light-emission effects from pn junctions created using split-gate electrostatic doping. Mike Cooke reports. esearchers are beginning to explore the semi- both convert light into current and current into light. conductor potential of monolayer materials The creation of n- and p-type conductivity in these Rbeyond graphene with hopes of developing devices was achieved electrostatically with a split gate robust devices that are flexible and transparent for beneath the WSe2 monolayer. deployment in wearable formats, interactive displays, Vienna University of Technology [Andreas Pospischil and efficient solar cells. et al, Nature Nanotechnology, vol 9 (2014), p257] An interesting class of materials that has recently come began its fabrication by forming a split gate of titanium/ to the fore is that of few-layer group-VIB transition-metal gold with a 460nm gap on a silicon/silicon dioxide dichalcogenides (TMDs) such as molybdenum disulfide wafer (Figure 1). Gate bonding pads were also formed (MoS2), molybdenum diselenide (MoSe2), tungsten with titanium/gold. The split gate was covered with disulfide (WS2), and tungsten diselenide (WSe2). silicon nitride, except for the bonding pads. The crystal structure consists of the metal atoms WSe2 flakes were exfoliated from bulk material sup- encapsulated between two layers of sulfur/selenium plied by Nanosurf onto a stack of polymer layers on a chalcogenide atoms. The bonding within a monolayer sacrificial silicon substrate. Suitable flakes were identi- is strong while the bonding between monolayers is fied under an optical microscope. -
Flexible, Semi-Transparent Ultrathin Solar Cells 9 March 2014
Flexible, semi-transparent ultrathin solar cells 9 March 2014 At least since the Nobel Prize in physics was awarded in 2010 for creating graphene, the "two dimensional crystals" made of carbon atoms have been regarded as one of the most promising materials in electronics. In 2013, graphene research was chosen by the EU as a flagship- project, with a funding of one billion euros. Graphene can sustain extreme mechanical strain and it has great opto-electronic properties. With graphene as a light detector, optical signals can be transformed into electric pulses on extremely short timescales. For one very similar application, however, graphene is not well suited for building solar cells. "The electronic states in graphene are not very practical for creating photovoltaics", says Thomas This is a microscope photograph of WSe2-samples, Mueller. Therefore, he and his team started to look connected to electrodes. Credit: TU Vienna for other materials, which, similarly to graphene, can arranged in ultrathin layers, but have even better electronic properties. A lot of research has been done on graphene The material of choice was tungsten diselenide: It recently—carbon flakes, consisting of only one layer consists of one layer of tungsten atoms, which are of atoms. As it turns out, there are other materials connected by selenium atoms above and below the too which exhibit remarkable properties if they are tungsten plane. The material absorbs light, much arranged in a single layer. One of them is tungsten like graphene, but in tungsten diselenide, this light diselenide, which could be used for photovoltaics. can be used to create electrical power. -
ACS Division of Analytical Chemistry
ANYL DIVISION OF ANALYTICAL CHEMISTRY P. Bohn and M. Bush, Program Chairs SUNDAY MORNING Section A Placeholder Low-Cost & Open-Source Analytical Chemistry J. P. Grinias, Organizer, Presiding 8:00 . Enabling Real-Time Processing of High-Volume Electrochemical Measurements via Open Source Software. N. Arroyo 8:20 . Open-Source Data Acquisition Devices for Chromatographic Instrumentation. S.W. Foster, E.W. Constans, J.P. Grinias 8:40 . Silicon photomultiplier as a low-cost fluorescence detector for capillary electrophoresis. B. Petersen, N.L. Allbritton 9:00 . Sensitive, selective, and quantitative copper sensor using click-chemistry with gold nanoparticles.. R.M. Cary, I. Monroe, j. holbrook, O. Hess, S. Unser, L. Sagle 9:20 . Glucose Responding Fluorescent Microneedle for An Affordable Continuous Glucose Monitoring. J. Kim, H. YIm, J. Park, H. Choi, B. Lee, S. Lee, M. Lee 9:40 Intermission. 10:00 . Low cost paper-based immunoassays for infectious disease diagnostics. K. Hamad- Schifferli 10:20 . Strength in numbers: A library of chemical color tests improves presumptive identification of illicit drugs and cutting agents.. T. Lockwood, B. Ray, G. Scott, M. Lieberman 10:40 . Chemical fingerprinting of carboxylate anions on low-cost paper supports. Y. Xu, M. Bonizzoni 11:00 . An Analysis of the Quality of Beta-Lactam Antibiotics collected in Nepal. W. Lewis, M. Benjamin 11:20 . Open-access resources for the teaching of analytical chemistry. D.T. Harvey 11:40 . Open-source analytical chemistry in the laboratory and the classroom. J.P. Grinias, J.A. Naese, J. Emig Section B Placeholder Active Learning in the Undergraduate Analytical Chemistry Curriculum (Invited) M. -
'Mind the Gap' Between Atomically Thin Materials 24 December 2014, by Walt Mills
'Mind the gap' between atomically thin materials 24 December 2014, by Walt Mills layer down to the graphene layer, they encountered a surprising amount of resistance. About half of the resistance was caused by the gap, which introduced a large barrier, about 1 electron volt, to the electrons trying to move between layers. This energy barrier could prove useful in designing next generation electronic devices, such as vertical tunneling field effect transistors, said Robinson. The interest in this type of material arose with the discovery of methods to make single layer graphite. Colorized TEM image of tungsten disulfide triangles The Penn State researchers use a more scalable (black) growing on graphene substrate (green). Credit: method than early graphene makers—chemical UT Dallas/Penn State vapor deposition—to deposit a single layer of crystalline tungsten diselenide on top of a few layers of graphene grown from silicon carbide. When it comes to engineering single-layer atomic Although graphene research exploded in the last structures, "minding the gap" will help researchers decade, many similar solids exist that can combine create artificial electronic materials one atomic to create entirely new artificial materials with layer at a time, according to a team of materials unimaginable properties. scientists. The researchers discovered that the tungsten The gap is a miniscule vacuum that researchers in diselenide layer grew in perfectly aligned triangular Penn State's Center for 2-Dimensional and islands 1 to 3 microns in size that slowly coalesced Layered Materials believe is an energy barrier into a single crystal up to 1 centimeter square. They keeping electrons from easily crossing from one reported their results in Nano Letters. -
United States Patent (19) (11) 4,208,474 Jacobson Et Al
United States Patent (19) (11) 4,208,474 Jacobson et al. 45) Jun. 17, 1980 (54 CELL CONTAINING ALKALI METAL ANODE, CATHODE AND ALKALI OTHER PUBLICATIONS METAL-METALCHALCOGENEDE Hellstrom et al, Phase Relations and Charge Transport COMPOUND SOLD ELECTROLYTE in Ternary Aluminum Sulfides, Extended Abstracts, vol. 78-1, Electrochemical Soc., pp. 393-395, May 75) Inventors: Allan J. Jacobson, Princeton; 1978. Bernard G. Sibernagel, Scotch Plains, both of N.J. Primary Examiner-Donald L. Walton Attorney, Agent, or Firm-Kenneth P. Glynn 73) Assignee: Exxon Research & Engineering Co., Florham Park, N.J. 57 ABSTRACT A novel electrochemical cell is disclosed which con (21) Appl. No.: 974,021 tains an alkali metal anode, an electrolyte and a chalco genide cathode wherein the electrolyte is a solid com 22 Filed: Dec. 28, 1978 position containing an electrolytically active amount of 5ll int. Cl’............................................. HOM 6/18 one or more compounds having the formula: 52 U.S. C. ..................................... 429/191; 429/218 58 Field of Search ................................ 429/19, 218 56) References Cited wherein A is an alkali metal, wherein B is an element U.S. PATENT DOCUMENTS selected from the group consisting of boron and alumi 3,751,298 8/1973 Senderoff............................. 136/6 F num, wherein C is a chalcogen, wherein x and y are 3,791,867 2/1974 Broadhead et al. ................. 36/6 F each greater than zero and wherein x-3y=4. A pre 3,864,167 2/1975 Broadhead et al. ....... ... 136/6 LN 3,877,984 4/1975 Werth .................................. 136/6 F ferred compound is LiBS2. A preferred cell is one hav 3,925,098 12/1975 Saunders ......