Capital Markets Day 2021 Gearing up for Extended Ambitions

CAPITAL MARKETS DAY 2021 GEARING UP FOR EXTENDED AMBITIONS

Paris | June 10, 2021 DISCLAIMER

This document is provided by Your attention is drawn to the future events and are dependent indication of the Company’s future the basis of, or be relied upon in Soitec (the “Company”) for risk factors described in Chapter on circumstances that may or results or developments. connection with, any contract, information purposes only. 2.2 of the Company’s 2019-2020 may not materialize in the future. The Company does not undertake commitment or investment The Company’s business Universal Registration Document. Forward-looking statements are any obligation to update or make decision. operations and financial position This document contains summary not a guarantee of the Company’s any correction to any forward- Notably, this document does not are described in the Company’s information and should be read in future performance. looking statement in order to constitute an offer or solicitation 2019-2020 Universal Registration conjunction with the 2019-2020 The Company’s actual financial reflect an event or circumstance to purchase, subscribe for or to Document (which notably includes Universal Registration Document position, results and cash flows, that may occur after the date of sell securities in the United States. the 2019-2020 Annual Financial and the FY’21 half-year report. as well as the trends in the this document. In addition, the Securities may not be offered or Report) and in the Company’s This document contains certain sector in which the Company occurrence of any of the risks sold in the United States absent FY’21 half-year report released forward-looking statements. operates may differ materially described in Chapter 2.2 of the registration or an exemption on November 19th, 2020. The These forward-looking statements from those contained in this Universal Registration Document from the registration under the Company’s 2019-2020 Universal relate to the Company’s future document. Furthermore, even if may have an impact on these U.S. Securities Act of 1933, as Registration Document was filed prospects, developments and the Company’s financial position, forward-looking statements. amended (the “Securities Act”). with the AMF. Both the Universal strategy and are based on results, cash-flows and the This document does not constitute The Company’s shares have not Registration Document and the analyses of earnings forecasts developments in the sector in or form part of an offer or a been and will not be registered half-year report are available on and estimates of amounts not yet which the Company operates solicitation to purchase, subscribe under the Securities Act. Neither the Company’s website in both determinable. By their nature, were to conform to the forward- for, or sell the Company’s the Company nor any other French and English versions (www. forward-looking statements are looking statements contained in securities in any country person intends to conduct a soitec.com, in section “Company - subject to a variety of risks and this document, such elements whatsoever. This document, or public offering of the Company’s Investors - Financial Reports”). uncertainties as they relate to cannot be construed as a reliable any part thereof, shall not form securities in the United States. AGENDA

#01 #02 #03 #04 Q&A VISION STRATEGY GLOBAL INNOVATION SESSION #1 & OUTLOOK Thomas Piliszczuk BUSINESS UNITS Christophe Maleville

PART ONE PART Paul Boudre Bernard Aspar

BREAK

#05 #06 Q&A OPERATIONS FINANCE SESSION #2 Cyril Menon Léa Alzingre PART TWO PART

CEO WRAP UP VISION & OUTLOOK

PAUL BOUDRE 01 Chief Executive Officer

STRATEGIC VISION SUSTAINABILITY SUPPORTS FOR THE NEXT 5 YEARS FINANCIAL MODEL FOR FY26 OUR VALUE CREATION STRATEGY

• Powerful megatrends • 3x revenues to ~$2B • Innovate towards a drive unprecedented sustainable economy semiconductor demand • ~35% EBITDA margin • Act to become a corporate role model • Soitec addressable market estimated at ~7 million wafers/year by FY26 • Leverage our inclusive and inspiring company culture

PC INTERNET 3G MOBILE SOCIAL 4G VIDEO IOT PHONES MEDIA SMARTPHONES STREAMING $400B ~$500B $300B

$200B $100B Global semiconductor sales ($B) Global semiconductor

1995 2000 2005 2010 2015 2020 2025 PAGE 001 2030

Source: SIA, IBS

PC INTERNET 3G MOBILE SOCIAL 4G VIDEO IOT ~$500B PHONES MEDIA SMARTPHONES STREAMING

$400B

$300B

$200B $100B Global semiconductor sales ($B) Global semiconductor

1995 2000 2005 2010 2015 2020 2025 PAGE 001 2030

Source: SIA, IBS

© Soitec 2021. No copying or distribution permitted. PAGE 7 1 VISION & OUTLOOK 2 3 4 5 6 POWERFUL MEGATRENDS DRIVE UNPRECEDENTEDSEMICONDUCTORS DEMAND MEGRATRENDS FOR SEMICONDUCTORS Towards ~$1T by 2030

PC INTERNET 5G 3G MOBILEARTIFICIAL SOCIAL AUTONOMOUS4G & VIDEOINDUSTRY 4.0 IOT EDGE$500B COMPUTING PHONESINTELLIGENCEMEDIA ELECTRICSMARTPHONES VEHICLES STREAMING

$400B

$300B

$200B $100B

WORK & LEARN HEALTHCARE SMART HOME AR & VR FROM HOME & SMART CITIES Global semiconductor sales ($B) Global semiconductor

1995 2000 2005 2010 2015 2020 2025 PAGE 001 2030

Source: SIA, IBS

LEADING SUPPLIER

MOBILE COMMUNICATIONS

AUTOMOTIVE & INDUSTRIAL BULK ENGINEERED FOUNDRIES DESIGN FABLESS MATERIALS SUBSTRATES

SMART DEVICES

© Soitec 2021. No copying or distribution permitted. PAGE 9 1 VISION & OUTLOOK 2 3 4 5 6 SU INEERED BSTRAT ENG ES IN NO VA S T IE IO R N D P N L U A T O F F O R M ... LEVERAGING S STRATEGIC PARTNERSHIPS

M G

IN THE ENTIRE S

I L

SEMICONDUCTOR S ECOSYSTEM

F T A N B E L E M S IP S U EQ

ICON

MORE MORE MORE

PAGE 001 PAGE 001 CONNECTED ENERGY INTELLIGENT EFFICIENT

© Soitec 2021. No copying or distribution permitted. PAGE 11 1 VISION & OUTLOOK 2 3 4 5 6 5G FRONT-END MODULES SOITEC ENGINEERED SUBSTRATES FOR SMARTPHONES MAKE THE WORLD WI-FI 6(E) FRONT-END MODULES FOR MOBILE DEVICES

PAGE 001

RADARS FOR CONNECTED CARS

PAGE 001

OPTICAL TRANSCEIVERS FOR HIGH-SPEED DATA CENTERS

PAGE 001

MOBILE NETWORKS BASE STATIONS

PAGE 001 GPS CHIPS FOR MORE SMARTWATCHES

CONNECTED PAGE 001 4G FRONT-END MODULES FOR SMARTPHONES

PAGE 001 3G FRONT-END MODULES FOR SMARTPHONES

PAGE 001

PAGE 001 © Soitec 2021. No copying or distribution permitted. PAGE 12 1 VISION & OUTLOOK 2 3 4 5 6 SIC INVERTERS FOR SOITEC ENGINEERED SUBSTRATES ELECTRIC VEHICLES MAKE THE WORLD ULTRA-LOW POWER INFERENCE PROCESSORS FOR AI AT THE EDGE

PAGE 001

FAST CHARGERS FOR ELECTRIC VEHICLES

PAGE 001

BATTERY MANAGEMENT SYSTEMS FOR ELECTRIC VEHICLES

PAGE 001

HIGH EFFICIENCY POWER SUPPLIES AND CHARGERS FOR MOBILE DEVICES

PAGE 001 LOW-ENERGY AUDIO SOC MORE FOR WIRELESS EARBUDS

ENERGY EFFICIENT PAGE 001 LOW POWER PROCESSORS FOR ALWAYS-ON IOT DEVICES

PAGE 001 AUDIO AMPLIFIERS FOR AUTOMOTIVE

PAGE 001

PAGE 001 © Soitec 2021. No copying or distribution permitted. PAGE 13 1 VISION & OUTLOOK 2 3 4 5 6 SOITEC ENGINEERED SUBSTRATES SMART CITY MAKE THE WORLD VISION PROCESSORS FOR AUTONOMOUS VEHICLES

PAGE 001

OPTICAL BIOSENSORS FOR SMART HEALTHCARE

PAGE 001

SPEECH RECOGNITION PROCESSORS FOR SMART SPEAKERS

PAGE 001

SMART HOME

PAGE 001 3D IMAGE SENSORS FOR MORE FACIAL RECOGNITION

INTELLIGENT PAGE 001 MULTIMEDIA APPLICATION PROCESSORS FOR AUTOMOTIVE

PAGE 001 INDUSTRIAL ROBOTS

PAGE 001

PAGE 001 © Soitec 2021. No copying or distribution permitted. PAGE 14 1 VISION & OUTLOOK 2 3 4 5 6 SOITEC ADDRESSABLE MARKET EXPECTED TO MORE THAN DOUBLE IN THE NEXT FIVE YEARS

SOITEC SERVES 3 STRATEGIC END MARKETS

~7 MILLION WAFERS ADDRESSABLE MARKET IN FY26 x2.5 GROWTH FY 2021 - 2026

MOBILE COMMUNICATIONS AUTOMOTIVE & INDUSTRIAL SMART DEVICES RF-SOI, FD-SOI, Power-SOI, FD-SOI, FD-SOI, Imager-SOI, POI, GaN SiC, GaN Photonics-SOI, PD-SOI

~20% AUTOMOTIVE x3 & INDUSTRIAL $668M REVENUE INCREASE REVENUE ~15% ~65% SMART DEVICES MOBILE ~10% COMMUNICATIONS AUTOMOTIVE & INDUSTRIAL ~75% MOBILE COMMUNICATIONS FY21 FY26

RF-SOI Power-SOI POI ~2M WAFER 200mm GaN CAPACITY SiC Photonics-SOI

RF-SOI FD-SOI Imager-SOI 300mm Photonics-SOI PD-SOI Power-SOI

FY21 FY22 FY26

OPERATING MODEL SET TO DELIVER HIGHER VALUE CREATION

~32%

~31%

FY21 FY22 FY26 $668M 30.7% ~$950M ~32% ~$2B ~35% REVENUE EBITDA REVENUE EBITDA EXPECTED EBITDA MARGIN MARGIN REVENUE MARGIN

Note: Model estimates for FY26 using EUR/USD exchange rate at 1.20

© Soitec 2021. No copying or distribution permitted. PAGE 18 1 VISION & OUTLOOK 2 3 4 5 6 SUSTAINABILITY SUPPORTS OUR VALUE CREATION STRATEGY #01 #02 #03 INNOVATE TO DRIVE THE TRANSITION TO A ACT TO BECOME A ROLE MODEL LEVERAGE OUR INCLUSIVE AND SUSTAINABLE ECONOMY FOR A BETTER SOCIETY INSPIRING COMPANY CULTURE

© Soitec 2021. No copying or distribution permitted. PAGE 19 1 VISION & OUTLOOK 2 3 4 5 6 EMBED ENERGY ACT TO REDUCE OUR EFFICIENCY IN OUR ENVIRONMENTAL FOOTPRINT PRODUCTS BY DESIGN INNOVATE TO DRIVE Soitec products save the yearly Engaged with the SBT* initiative to cut THE TRANSITION TO domestic energy consumption of a our carbon emissions in line with a A SUSTAINABLE ECONOMY 1M <1.5°C inhabitants city pathway by 2026

Reducing water consumption, carbon emissions and increasing energy efficiency

Committed to protect biodiversity both on-site and off-site (eg. support for reforestation programs)

(*) Science Based Targets

© Soitec 2021. No copying or distribution permitted. PAGE 20 1 VISION & OUTLOOK 2 3 4 5 6 CROSS-FERTILIZE OUR SET HIGH ETHICAL ECOSYSTEM STANDARDS FOR US AND FOR ACT TO BECOME A OUR BUSINESS RELATIONS ROLE MODEL PARTNERING FOR A BETTER with universities and public institutions SOCIETY 90% SUPPORT LOCAL of our strategic suppliers COMMUNITIES signed our Code of Good Conduct 100 young under 26 hired over the past year

© Soitec 2021. No copying or distribution permitted. PAGE 21 1 VISION & OUTLOOK 2 3 4 5 6 ADVANCING GENDER EMBARK OUR EMPLOYEES LEVERAGE OUR EQUALITY IN OUR INDUSTRY AS SHAREHOLDERS INCLUSIVE AND INSPIRING COMPANY CULTURE 94/100 100% FY21 gender equality index in France of our employees eligible for free performance share in 2020 71% of eligible employees invested in our last ESPP, all up to the legal ceiling

© Soitec 2021. No copying or distribution permitted. PAGE 22 1 VISION & OUTLOOK 2 3 4 5 6 Paul Boudre A GLOBAL Bernard Aspar CEO COO - Léa Alzingre MANAGEMENT GLOBAL BUSINESS CFO TEAM TO EXECUTE Christophe OUR VISION Maleville Cyril Menon CTO OPERATIONS

Pascal Lobry Steve Babureck PEOPLE AND SUSTAINABILITY CORPORATE Thomas DEVELOPMENT Piliszczuk Yvon Pastol & INVESTOR STRATEGIC CUSTOMER RELATIONS OFFICE GROUP

Joséphine Deege-Mansour LEGAL Philippe Pellegrin Reiner Breu GLOBAL SOURCING QUALITY & PROCUREMENT

THOMAS PILISZCZUK 02 Executive Vice President Global Strategy

MAJOR MEGATRENDS ENGINEERED SUBSTRATES PLAY A KEY ROLE SOITEC STRATEGY TO SET STANDARDS

• Driving semiconductor growth • Electronic systems need new • Engage across entire value in the current decade semiconductor solutions chain to set sustainable industry standards

#01 #02 #03 #04 DIGITAL LONGEVITY NET-ZERO SHARING ECONOMY ECONOMY ECONOMY ECONOMY

• Connected devices & Big • Telemedicine, Personalized, • Energy efficient Data • Cyber security, Biomedic, data - cyber security, Smart Embedded, Wearable Centers, Zero emission Mobile payment, Home and Cities vehicle, Renewable energy E-commerce • US Healthcare IT: $150B by • 7/8 Top market capitalization 2025 with 11% CAGR • Carbon neutral • Market: $335B by 2025 for are ICT companies encompasses everything 5 key sharing sectors and everyone

MORE MORE MORE CONNECTED INTELLIGENT ENERGY EFFICIENT x5 x5 x2 125B 175ZB 20% of connected of data volume of world’s electricity consumed devices in 2030 in 2025 by ICT industry in 2025

Source: International Renewable Energy Source: Cisco Source: Intel 2020 Agency, Tsunami of data , 2017

5G EDGE AI ELECTRIFICATION SMARTPHONES AIoT OBJECTS EV CARS x8 x150 x10 >1.6B >2.5B >45M in 2030 in 2030 in 2030

GLOBAL PLATFORM SMART EVERYTHING GREEN ENERGY EVERYWHERE

5G IS DELIVERING MOVING TO ON PROMISES AN ALL CONNECTED 5G WORLD

5G roadmap extends Continued innovation for x100 new verticals deployments, for 10+ years use cases, and spectrum NETWORK CAPACITY Driving innovation to enhance smartphones and 3GPP eMBB 5G NR-Light e.g., Extended New higher bands transform other industries Rel. 17+ enhancement wearables reality above 60 GHz x10 SPEED

3GPP eMBB 5G New deployment Fixed Sub-6 & x10 Rel. 16 enhancement models wireless mmWave FASTEST RESPONSE TIME x10 3GPP eMBB 5G Connected Fixed Sub-6 & CONNECTED Rel. 15 Smartphone computing wireless mmWave DEVICE x10 LESS ENERGY PER DATA

Sources: IMT-2020, Qualcomm, Orange

x2 x2 $44B MAX LNA - Switch - Tuner FREQUENCY Continuous improvement x3.5 x2 Sub-6GHz x2 BANDWIDTH Filters Need for disruptions $21B x4 FREQUENCY $12B COMBINATION x20 NEW MOBILE DATA Active Antenna TRAFFIC 2020-2030 NEW In Package 2020 2025 2030 28, 39, …GHz mmW Need for disruptions FEM SEMICONDUCTORS MARKET

Sources: Soitec estimates, Qualcomm 2019, Ericsson Mobility Report 2020, Yole 2020. Note: Soitec estimates, x factors are on average 5G vs 4G phones, Yole.

AI TRAINING IN THE CLOUD INFERENCE IN THE CLOUD 300M 15M DATA SECURITY 2020 2025 2030

Data safety in local process EDGE AI DEVICES (UNITS) NOW Source: ABI research 2021 ADDING EDGE ECONOMY COMPUTING Energy saving AI TRAINING IN THE CLOUD INFERENCE AT THE EDGE

ROBUSTNESS In the Cloud 80% Real-time computing At the Edge FUTURE

Total Data (Log Scale) (Log Data Total ADDING 20% ON-DEVICE PRIVACY COMPUTING 2015 2030 DATA PROCESSING MOVING TO THE EDGE No personal data sharing AI TRAINING AT THE EDGE INFERENCE AT THE EDGE Source: IBS 2020

© Soitec 2021. No copying or distribution permitted. PAGE 31 1 2 STRATEGY 3 4 5 6 • High power edge computing • High speed network INTELLIGENCE • Next generation display AT THE EDGE • Edge computing • 3D sensing VIRTUALIZATION • Wide area network • High brightness/Fast response display AIoT • New human-machine interface • New human-machine interface • High speed connectivity (5G) IoT • 2D/3D sensor • High power computing (SoC with high power GPU) • 2D sensor • Wide range connectivity • Home range connectivity (UWB, LPWAN) • 2D/3D sensor (WiFi/Bluetooth) • Mid-power computing • Low power computing (MCU/SoC with AI) (MCU)

2020 >2025

© Soitec 2021. No copying or distribution permitted. PAGE 32 1 2 STRATEGY 3 4 5 6 ONCE-IN-A CENTURY TRANSFORMATION IN >45M >70% AUTOMOTIVE MARKET CAGR 47% AUTO SEMI 50% OPPORTUNITIES 2025 >20M TELEMATIC AND 30% C 27M INFOTAINMENT SEMI Connected Sales of 5G enabled $15B vehicles in 20261 CAGR 10% 3.2M

2020 2025 2030 2020 2025 2030 AUTONOMOUS A 10M SEMI GLOBAL EV SALES (MILLION UNITS) SiC BASED EV POWERTRAIN (%) Autonomous Sales of L3 and above $16B vehicles in 20302 CAGR 25%

S 40M CONSOLIDATED Shared Global shared fleet WITH CONNECTED SiC IS KEY TO 3 Weight Reliability Thermal in 2030 ADDRESS THE conductivity CHALLENGES OF EV POWER EV ADOPTION E 45M SEMI Electric Global EV sales in 2030 $8B Range Charging Cost (>50% market share)4 CAGR 30% anxiety time

(1) v.s. 2020: Zero 5G vehicles; (2) v.s. 2020: Zero L3+ vehicles; (3) v.s. 2020: 19m global shared fleet; (4) v.s. 2020: 3.2m EV sales: 4.2% market share Sources: Soitec estimates, LMC, IHS, NXP, IFX 2019 / CAGR (2019~2025), IEA 2021, Exawatt, Yole.

Radar

Lidar 35% Camera ADAS Fusion processor 15% ~400 ~200 Radar Radar processor Radar Image sensor 2020 2025 2030 Level 2 Level 3 Level 4&5 Domain controller Camera Autonomous cars level 2 & above (%) ADAS semiconductor content ($) Radar

Camera

Radar

Radar On-board Charger ConverterDC-DC 120 ELECTRIFICATION Traction 95 >600 Inverter SiC Diode further reduction SiC MOSFET 59 plan in EU >400 GaN MOSFET 43 PMIC ~200 Battery BMS <100

ECUs Gate drivers 2020 2021 2030 ICE MHEV PHEV BEV Smart actuator

CO2 emission regulation (gCO2/km) Power semiconductor content ($)

Source: Soitec estimates, Infineon, NXP, IHS, The International Council on Clean Transportation (ICCT) 2020

TO REACH $1T BY THE END OF THE DECADE 2025 CAGR $281B 10% 2030 $458B 1250 WIRELESS COMMUNICATIONS(1)

1000 2020 $39B

2025 750 CAGR $73B 19% 2030 $165B 500 (2) Others Auto IoT Wireless SMART IoT DEVICES

250 2020 $38B

SOITEC TARGETS 2025 CAGR $65B 0 2/3 OF THE 10% 2020 2022 2024 2026 2028 2030 SEMICONDUCTOR 2030 $106B SEMICONDUCTOR MARKET 2020– 2030 ($B) MARKET AUTOMOTIVE ELECTRONICS

Source: IBS - semiconductor market analysis - Jan 2021 (1) Smartphone + infrastructure; (2) Sensor + Memory+ Edge computing

P P AC Continue Moore’s Law

PPAC New architectures

New structures / 3D

New materials

TIME TO MARKET New ways to shrink

Advanced packaging ENGINEERED SUBSTRATES

SUSTAINABILITY

SAVING THE YEARLY DOMESTIC ENERGY CONSUMPTION OF A 1 MILLION INHABITANTS CITY

SMART DEVICES, SMARTPHONES DATA CENTERS AUTOMOTIVE FRONT END MODULES OPTICAL TRANSCEIVERS

Soitec FD-SOI Soitec RF-SOI Soitec Photonics-SOI

Energy savings: 717 GWh* Energy savings: 598 GWh* Energy savings: 423 GWh*

Carbon savings: 466 ktCO2e* Carbon savings: 352 ktCO2e* Carbon savings: 212 ktCO2e*

(*) based on CY2020 data

COMPUTE Energy efficiency performance, data rate with photonics

st Max. F Co req m ht m ig W L

l P a SENSE o

m w r e e r h 3D imaging, health sensors

C p O

m 2 e T

R e l e ia g b ta ili l ty Vo N oise Leak POWER Power density, higher efficiency Combining physical properties of materials

© Soitec 2021. No copying or distribution permitted. PAGE 38 1 2 STRATEGY 3 4 5 6 THIS IS THE CUSTOMER/ MARKET NEEDS ‘SOITEC FLYWHEEL’ & PRODUCT DISRUPTIONS 1 ANNUAL PROFITABLE STRATEGIC GROWTH PLANNING Expand & protect 6 2 core business

SUSTAINABLE Extend into VALUE attractive CREATION adjacencies Evolve operating 5 3 model MANUFACTURING INNOVATION Reinforce global positioning 4

PRODUCT DEVELOPMENT WITH CUSTOMERS

MAJOR MEGATRENDS ENGINEERED SUBSTRATES PLAY KEY ROLE SOITEC STRATEGY TO SET STANDARDS

• Driving the semiconductor growth in • Electronic systems need new • Engage across entire value chain to set the current decade semiconductor solutions sustainable industry standards

BERNARD ASPAR 03 Chief Operating Officer

CUSTOMERS DIFFERENTIATED PRODUCTS PROFITABLE GROWTH

• Focusing on three • Product roadmap • Volume expected strategic end markets bringing value from foundries to to 2.5x by FY26 IDM & fabless • Revenue expected to 3x by FY26

MOBILE AUTOMOTIVE SMART COMMUNICATIONS & INDUSTRIAL DEVICES

MAIN DRIVERS MAIN DRIVERS MAIN DRIVERS • 5G mmW • Autonomous cars • Edge computing • 5G sub-6 GHz • Vehicle electrification • 3D sensing & Healthcare • Mobile infrastructure • Infotainment • Smart home & Smart cities • WiFi 6 • Industry 4.0 • Data centers

SOITEC PRODUCTS SOITEC PRODUCTS SOITEC PRODUCTS RF-SOI FD-SOI Power-SOI FD-SOI FD-SOI Imager-SOI POI GaN SiC GaN Photonics-SOI PD-SOI

© Soitec 2021. No copying or distribution permitted. PAGE 43 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 >7M SERVING >7 MILLION WAFERS WAFERS SMART DEVICES ADDRESSABLE MARKET* FD-SOI BY FY26 Imager-SOI Photonics-SOI PD-SOI

AUTOMOTIVE & INDUSTRIAL Power-SOI FD-SOI ~3M SiC WAFERS GaN

MOBILE COMMUNICATIONS RF-SOI FD-SOI POI GaN

FY21 FY26 *Engineered substrates market opportunity

RF-SOI Power-SOI ~3M Photonics-SOI WAFERS 200mm POI GaN SiC

RF-SOI FD-SOI 300mm Imager-SOI Photonics-SOI PD-SOI Power-SOI

FY21 FY26 *Engineered substrates market opportunity

APPLICATIONS FD-SOI • Smartphones radio-frequency front-end modules Integrated technology • Networking base stations

POI SOITEC PRODUCTS ENABLE High performance • 4G 5G filters • 5G • WiFi 6 connectivity GaN High performance power amplifier

POWER LOW NOISE ANTENNA FILTER ENVELOPE PHASE SYSTEM AMPLIFIER AMPLIFIER SWITCH TUNER TRACKER SHIFTER ON CHIP (PA) (LNA) (AT) (ET) (SoC)

ANTENNAS RF-SOI 4G / 5G FRONT-END MODULES SUB- POI Power amplifiers, switches, antenna tuners, filters 6GHZ FEM KEY FD-SOI Sub-6GHZ mmWave BLOCKS GaN

WiFi 2.4GHz UWB

WiFi 5 & 6GHz RF-SOI 5G MMW FEM KEY FD-SOI TRANSCEIVERS BLOCKS GaN Baseband Apps processor processor Others RF-SOI Power WIFI & mngt UWB POI Memory FEM KEY BLOCKS FD-SOI

RF-SOI FD-SOI POI GaN >200mm2 ~30mm2

~10mm2 ~60mm2 ~50mm2

~30mm2 ~60mm2

4G 5G WiFi TOTAL 5G Filters 5G WiFi 6 TOTAL Sub-6GHz Sub-6 GHz Sub-6 GHz mmWave & UWB TODAY WITHIN THE NEXT 5 YEARS

© Soitec 2021. No copying or distribution permitted. PAGE 48 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 MOBILE COMMUNICATIONS: VALUE PROPOSITION RF-SOI • A standard for complex RF signal routing • 5G sub-6GHz and mmW integration levels • Reliable and robust for best antenna performance • Minimum interference to and from digital and control functions 200mm • Eases mmW and WiFi efficient PA integration

300mm COMPREHENSIVE PRODUCT PORTFOLIO IN 200-300mm

-100dBm RFeSI100T

-90dBm REeSI90 EXISTING AND FUTURE RFeSI80 APPLICATIONS -80dBm mmW-SOI • Standard for 4G and 5G RF Front End -70dBm iFEM-SOI • WiFi 6 / WiFi 6E MU-MIMO

Harmonic performance -60dBm HR-SOI • 5G mmW Front End centric mmW small cells & mobile

FD-SOI VALUE PROPOSITION • Cost efficient integrated radio in 5G mmW • Energy efficient analog/mixed signal solutions • WiFi 6 SoC platforms • Scalable and single chip solution for mmWave and Sub-THz design 300mm

FD-SOI APPLICATIONS FOR MOBILE APPLICATIONS Evolution from broadband power management to broadband communications

~800mm2 Digital Beamformer SatCom (base stations) EXISTING AND FUTURE APPLICATIONS Radio Transceiver 5G mmW ~80mm2 • 5G mmW module • System on chip (SoC) • Envelope tracker IC Envelope Tracker 4G/5G ~2mm2

© Soitec 2021. No copying or distribution permitted. PAGE 50 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 MOBILE COMMUNICATIONS: POI VALUE PROPOSITION • Superior temperature stability • Lower loss • Integration for multiplexers • Larger bandwidth 150mm • Efficient rejection

200mm APPLICATION IN 5G SMARTPHONE

Filters for 5G Smartphones 4G bands EXISTING AND FUTURE 5G low complexity bands APPLICATIONS • SAW filters for 5G POI 5G high performance bands Opportunity Low band Mid/high band Ultra high band

GaN VALUE PROPOSITION • Superior power amplifier efficiency and power density • Excellent higher frequency and wide bandwidth performance enabling highest data rates 150mm • Compact size, weight and lowest costs of ownership for 4G/5G infrastructure systems

200mm DIFFERENTIATED PRODUCT OFFERING FOR THE BEST SOLUTION PER APPLICATION

Cap Standard GaN or in-situ SiN

EXISTING AND FUTURE Barrier AlN InAlN AlGaN APPLICATIONS Array Antenna Channel GaN • GaN/SiC is standard for 4G LTE base station power amplifiers Buffer RF • GaN/Si in R&D for 5G MIMO infrastructure Massive MIMO and smartphones Substrate FZ-Si, MCz-Si up to 200mm; SiC up to 150mm 64 Tx and 64 Rx

© Soitec 2021. No copying or distribution permitted. PAGE 52 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 SOITEC PRODUCTS PORTFOLIO Power-SOI Power management IC, AUTOMOTIVE & INDUSTRIAL In-vehicle networking & gate driver

APPLICATIONS FD-SOI • Autonomous driving systems MCUs, ADAS-Radar • Connected car ADAS-Vision • Vehicle electrification • Industry 4.0 GaN DC-DC 48V converters SOITEC PRODUCTS ENABLE • Autonomous driving • Infotainment TM • Vehicle electrification Smart Cut SiC Automotive electrification

Infotainment COMPREHENSIVE PRODUCTS PORTFOLIO & connectivity FOR AUTOMOTIVE

INFOTAINMENT & ADAS POWERTRAIN CONNECTIVITY Vision processor Gate drivers / actuator (FD-SOI) (Power-SOI) Class D audio amplifier On-board (Power-SOI) Charger Radar Diode / MOSFET ConverterDC-DC Multimedia application (FD-SOI) (SiC / GaN Power) processor (FD-SOI) Domain controller BMS Traction IVN (FD-SOI) (Power-SOI) Inverter (Power-SOI) PMIC Front-end module (Power-SOI) (RF-SOI / POI) SoC (FD-SOI) Battery

ECUs

Power-SOI ~140mm2 FD-SOI TM 500 - Smart Cut SiC 1000mm2 GaN 2000 - 3000 mm2

~865mm2 60 - 100mm2

80 - 160mm2 340 - 460mm2 ~105mm2 ~160mm2 ~95mm2 Powertrain Infotainment ADAS TOTAL Powertrain Infotainment ADAS TOTAL & Connectivity & Connectivity

TODAY WITHIN THE NEXT 5 YEARS

© Soitec 2021. No copying or distribution permitted. PAGE 55 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 AUTOMOTIVE & INDUSTRIAL: VALUE PROPOSITION • Low and high voltage integration Power-SOI • High power density with smaller die area and isolation area • Noise immunity & less crosstalk • EMI/ EMC and ESD enhancement • High robustness and reliability 200mm • High temperature operation & latchup free • Total cost of ownership (TCO) 300mm

POWER-SOI APPLICATIONS

EXISTING AND FUTURE APPLICATIONS • In vehicle networking (IVN) • Power management IC (PMIC) IVN & Smart ADAS L2+ Industry 4.0 Power 48V MHEV & ASIL & CbM PHEV & BEV • System basis chip (SBC) IVN: In-Vehicle MHEV: Mild- ADAS: Advanced CbM: Condition PHEV: Plug-in • Battery management systems (BMS) Networking Hybrid Electric Driver-Assistance Based Monitoring Hybrid Electric Vehicle Systems Vehicle • Smart motor controller/ actuator ASIL: Automotive BEV: Battery Safety Integrity Electric Vehicle • Industrial sensors & ultrasound pulser IC Level

© Soitec 2021. No copying or distribution permitted. PAGE 56 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 AUTOMOTIVE & INDUSTRIAL: VALUE PROPOSITION FD-SOI ADAS INFOTAINMENT • Efficient multithreading ADAS • Improved system reliability and soft processors error rate • Integrated radar system on chip • Flexible computing with Adaptive 300mm Body Biasing (ABB)

FD-SOI CAPABILITIES PAVE THE WAY FOR ADAS EVOLUTION FROM L1 TO L5

Domain Controllers, MMIC Imaging radar ~360mm2 EXISTING AND FUTURE APPLICATIONS • Autonomous driving vision processors MPU e-cockpit ~160mm2 • Advanced MCU for domain controller • MPU for infotainment 2 • Automotive radar MPU Infotainment ~60mm

© Soitec 2021. No copying or distribution permitted. PAGE 57 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 AUTOMOTIVE & INDUSTRIAL: Smart CutTM SiC VALUE PROPOSITION Smart CutTM SiC vs SiC: It is all about device yield and performances! • Strong reduction of defect density (x5) to enable larger die • Lower resistivity substrate improves device power performance 150mm • 200mm scalability to accelerate SiC adoption

200mm FAMILY “SMART CUT SiC PRODUCT” ROADMAP FROM FY23

200mm Low resistivity EXISTING AND FUTURE APPLICATIONS Smart CutTM SiC • Electric mobility TM • On-board chargers 150mm Low resistivity Smart Cut SiC • Traction inverter system 150mm Smart CutTM SiC • Fast charging stations

• Inverters: industrial, renewable energy Timeline

GaN VALUE PROPOSITION • Lowest conduction and switching loss for highest system efficiencies • High frequency switching and temperature operation for compact systems 150mm

200mm DIFFERENTIATED PRODUCTS OFFERING FOR THE BEST SOLUTION PER APPLICATION

Cap In-situ SiN GaN cap p-GaN cap

EXISTING AND FUTURE APPLICATIONS Barrier (In,Al)N AlGaN • Automotive DC-DC 48V converters, on-board chargers, traction inverters for automotive Channel GaN • Variable speed drives for industrial Buffer HV Power • USB fast chargers Substrate CZ-Si up to 200mm

APPLICATIONS • 3D sensors/Facial recognition Imager-SOI • Data centers For improved imager • Healthcare monitoring performance in NIR • Smart home & Smart cities • Wearables Photonics-SOI Optical transceivers and bio-sensing SOITEC PRODUCTS ENABLE • Artificial intelligence at the Edge • Healthcare monitoring for PD-SOI wearables High performance • High speed data centers computing

© Soitec 2021. No copying or distribution permitted. PAGE 60 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 SMART DEVICES: VALUE PROPOSITION FD-SOI • Lower active power consumption - Always ON • Performance on demand

• Ultra-low leakage with ultra-low VDD • Robust energy harvesting ‘zero power’ capabilities 300mm • Lowest-cost processing (inferences-per-Watt-per-$)

TYPICAL DIE SIZE PER APPLICATION IN mm2 Extending low-power paradigm from smart devices to edge-connected processing solutions EXISTING AND FUTURE APPLICATIONS Cloud-secured 2 • Smart home devices cross-over processing Edge computing ~60mm • Smart meters / smart grid • Environmental monitoring Secure connectivity IoT ~15mm2 • Medical IoT • Smart sensors for agriculture 2 • Wearables Battery-less design Wearables ~5mm

© Soitec 2021. No copying or distribution permitted. PAGE 61 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 SMART DEVICES: VALUE PROPOSITION Imager-SOI • Reduced cross talks among pixels • Lower near infrared illuminator power • Reduced noise, increased signal to noise ratio • Dedicated layer deposition for innovative stacking 300mm • Better fill factor • Optimized performances per functional block

NIR IMAGER (NEAR INFRA-RED) EXISTING AND FUTURE APPLICATIONS

• 3D image sensing for facial recognition in Front side NIR / colored smartphones and AR/VR devices NIR imager Imager

~20mm²

© Soitec 2021. No copying or distribution permitted. PAGE 62 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 SMART DEVICES: Photonics-SOI VALUE PROPOSITION • SOI as standard substrate for waveguides • Single die integration (simpler packaging) • Chip scale integration of optical function in CMOS fab 200mm • High speed modulation compliant and low loss waveguide • Easy design for bio sensing and healthcare 300mm

TYPICAL DIE SIZE PER APPLICATION IN mm2

EXISTING AND FUTURE APPLICATIONS • Optical transceivers for data centers • Health sensors (incl. glucose monitoring)

Datacom transceivers Bio-sensing ~60mm² ~50mm²

© Soitec 2021. No copying or distribution permitted. PAGE 63 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 SMART DEVICES: PD-SOI VALUE PROPOSITION • Improved device performances • Reduced device energy • Smaller leakage 200mm

300mm

TYPICAL DIE SIZE PER APPLICATION IN mm2

EXISTING AND FUTURE APPLICATIONS Servers and • Servers high-performance • High performance computing computing ~700mm²

© Soitec 2021. No copying or distribution permitted. PAGE 64 1 2 3 GLOBAL BUSINESS UNITS 4 5 6 DOLPHIN DESIGN: VALUE PROPOSITION • Ultimate energy efficiency through Design of custom ACCELERATE ENERGY pre-optimized IP platforms ASICS From specification to final EFFICIENT SoC DESIGNS • Adaptative Body Biasing (ABB) for product shipment FD-SOI technologies

• Ready to use Audio CODEC including SPEED AI based KWS (Key Word Spotting) PLATFORMS Stand-alone and • State-of the art proven ASIC design platform-based IPs & supply chain

END APPLICATIONS DOLPHIN DESIGN SOLUTION OVERVIEW SPEED: SYSTEM PLATFORMS FOR ENERGY EFFICIENT DESIGN

SPIDER BAT CHAMELEON RAPTOR PANTHER

Available Available Available Q4 2021 Q2 2021 Wearables Smart home Medical Power Audio ULP MCU fabric with optional Multi-Core Management platform AI accelerator Processor PAGE 001 PAGE 001 platform A/D, D/A, Filtering, Always -Ready / Instant-On architecture, Conventional Mixed-Signal IP ANC, VAD (voice CPU Core-Agnostic, Multi-core capability… DSP including AI platform- Vregs, detection), KWS (key dedicated Accelerator Osc, PMU, PorBor, word spotting)… Pwr Gating, Smart city Industrial Connected car BodyBiasing…

PAGE 001 PAGE 001 PAGE 001

~20% AUTOMOTIVE x2.5 & INDUSTRIAL $668M REVENUE INCREASE VOLUME ~15% ~65% SMART DEVICES MOBILE ~10% COMMUNICATIONS AUTOMOTIVE & INDUSTRIAL ~75% MOBILE COMMUNICATIONS FY21 FY26

Smart devices

Automotive & Industrial

Mobile communications

LOW MID HIGH

CUSTOMERS DIFFERENTIATED PRODUCTS PROFITABLE GROWTH

• Focusing on three • Product roadmap • Volume expected strategic end markets bringing value from foundries to to 2.5x by FY26 IDM & fabless • Revenue expected to 3x by FY26

CHRISTOPHE MALEVILLE 04 Chief Technology Officer

ENGINEERED SUBSTRATES AND SEMICONDUCTOR INNOVATION SOITEC TECHNOLOGY TOOLBOX SOITEC INNOVATION MODEL

• Leveraging materials science through • Maturing & sharpening our • We are transforming our Innovation engineered substrates technologies to bring best layer on to meet short to long-term best substrate market needs • PPACt is driving our innovation strategy • Smart CutTM SiC technology is on • Evolving our collaboration model a fast track towards 1st product generation

Leverage Develop Design Apply MATERIALS INTRINSIC TECHNOLOGY ENGINEERED SEMICONDUCTOR PROPERTIES SOLUTIONS SUBSTRATES MEGATRENDS

Today: • Electronic • Smart CutTM • SOI products portfolio • Photonic • Smart StackingTM • 5G • Anything-on- • Piezoelectric • Epitaxy • AI Anything (Active • Electromagnetic • Tiling layer on substrate) • Energy efficiency • 2.5D/3D Tomorrow: • Surface smoothing • 6G • Smart CutTM • Quantum computing on cavity • Lab on chips

PPACt PPACt PPACt PPACt PERFORMANCE POWER AREA-COST TIME-TO-MARKET • Speed • Lower power • Smaller die size • Adoption window • Frequency consumption • Integrated chips, • Faster than • Linearity • Energy efficiency functions competition • Defectivity • Yield • Wavelength • Die cost • Bandwidth • System cost

PPACt PPACt PPACt PPACt PERFORMANCE POWER AREA-COST TIME-TO-MARKET • Optimized Ron • Lower power • Integrated FEM • Yearly optimization x Coff consumption • Silicon class yield • Linearity @ -100dBm • 50% compared • Defectivity to GaAs compatible with 28nm

SOITEC CORE TECHNOLOGY TOOLBOX A

Smart CutTM Smart StackingTM Refresh - Repolish

Polishing Annealing Bonding Implantation

Epitaxy Material Expertise Advanced Processing

Functional/ insulator layer

Base wafer: mechanical support Silicon or easy to handle & active

TECHNOLOGY • Industrial manufacturability of SOI – high yield • Drastic improvement in uniformity & quality • Re-use of donor wafer increases cost efficiency • Flexibility of material integration

Silicon Piezo SiC InP GaN GaAs Ge

Silicon

Sapphire

SiC SUBSTRATE

GaAs

Device wafer

FROM SiC BULK TO ENGINEERED TO POWER SMART CUTTM SiC DEVICES

A 1. niti mteris B

A 2. eposition MAJOR STAGES OF SMART CUT™ SiC A . mpnttion . onductie bonding • Donor wafer: Prime quality SiC

• Handle wafer: Low Res SiC A

B • Conductive bonding interface A . Spitting • Finishing including CMP & high temp anneal

. nneing nd • Donor wafer re-use for new touc poising process cycle . er is reresed nd becomes ne er ngineered substrte

Current industry solution Smart CutTM’s engineered SiC Device structure (monocrystalline bulk) Epi-ready substrate solution

Device Epi layer (drift) Conversion buffer

Substrate

2021 Premium active layer Epi-ready surface SIMPLER PROCESS, HIGHER YIELD

2022 Lower base resistivity Lower losses at high current SMALLER DIE, SYSTEM BENEFIT

© Soitec 2021. No copying or distribution permitted. PAGE 79 1 2 3 4 INNOVATION 5 6 INNOVATION GROUNDBREAKING RESEARCH STARTS WITH PEOPLE. At Soitec, we have an international team of material SNAPSHOT experts that drive advances in semiconductor technology.

NUMBER OF NEW SOITEC PATENTS 2019-2021 285

3,500+ ACTIVE PATENTS INNOVATION 13% OF REVENUE WORLDWIDE PLATFORMS IN R&D IN FY21 238 962

439

FY19 FY20 FY21 TOTAL NEW IP ~200 RESEARCHERS 25% OF PHDs GLOBAL TEAM & INVENTORS

N MANUFACTURING L A

TIME TO O P

CUSTOMER E MARKET Visibility

G N

D over speed

T E

N K

PI T LOT PRODUC

PRODUCTS UNDER DEVELOPMENT TO SUPPORT OUR BP TECHNOLOGIES AND PRODUCTS INCUBATION

Addressing short and medium-term To support future opportunities and growth differentiations for our customers DISRUPTIVE INNOVATION INCREMENTAL INNOVATION Tiling for large diameters 2.5D/3D SOI next generation POI next generation SOI for MEMS InP - photonics, 6G Materials science SiC Compound integration

ENABLING InP FOR SEVERAL APPLICATIONS

• High frequency devices (RF, THz, 5G/6G, …)

• Optoelectronics & Photonics (lasers, 3D sensing, PICs, gas sensing, ...)

• SWIR Image sensors InP bulk InP on Silicon • Energy harvesting (IR, solar 100mm 200mm cells, …)

Expanding our R&D Early prototyping, Accessing new ideas, depth while keeping focus on lead time disruptive process compatibility and quality improvements, with internal R&D broader expertise corridors

Worldwide Partners

HUB • Development • Prototyping

PROGRAMS • SiC • Silicon smoothing • Silicon epitaxy • GaAs • InP • Smart CutTM on cavity (MEMS)

PEOPLE • 20 researchers (Soitec Lab) • 30 researchers on development programs & contribution of more than 100 employees (Leti) • >10 external partners

POI

SOI Technology maturity X differentiation Technology

2021

MATERIALS SCIENCE PER PPACt BEST LAYER ON BEST SUBSTRATE UNIQUE INNOVATION MODEL

CYRIL MENON 05 Senior Executive Vice President Operations

AGILE AND SCALABLE OPERATIONS OPERATING LEVERAGE SUSTAINABLE GROWTH

• Fabs output has doubled from • Bernin 1, Bernin 2, and Simgui fabs • Engaged with the SBT initiative FY2018 to FY2020 running at full capacity. Committed to and driving our growth in line with maximize output limiting global warming to 1.5°C • Annual capacity to double by the end of FY26 to >4 million wafers • Ramp Bernin 3 & Singapore to sustainable margin

• Ongoing cost reduction with capacity optimization and yield improvement

© Soitec 2021. No copying or distribution permitted. PAGE 89 1 2 3 4 5 OPERATIONS 6 GLOBAL INDUSTRIAL FOOTPRINT - 150mm200mm CAPACITY EXPANSION NEW SOITEC BELGIUM N.V HASSELT, CAPACITIES BELGIUM 60K wafers/year - max capacity (PENDING BUSINESS MILESTONES)

200mm 300mm

300mm SOI CAPACITY EXPANSION 1M wafers/year SIMGUI SHANGHAI, CHINA – max capacity from 350K push to 450K wafers/year - max capacity

150mm200mm

200mm 300mm 150mm200mm 300mm 150 – 200mm SiC NEW CAPACITY EXPANSION 1M wafers/year – max capacity

SOITEC BERNIN 1, FRANCE - SOITEC BERNIN 2, FRANCE SOITEC BERNIN 3, FRANCE SOITEC PASIR RIS, SINGAPORE 950K wafers/year - max capacity from 650K improved up to 700K from 500K improved to 750K 1M wafers/year - max capacity wafers/year - max capacity wafers/year - max capacity

RF-SOI Power-SOI ~2M WAFER 200mm POI CAPACITY GaN SiC Photonics-SOI

RF-SOI FD-SOI 300mm Imager-SOI Photonics-SOI PD-SOI Power-SOI

FY21 FY22 FY26

300mm SOI

SOITEC BERNIN 2, FRANCE SOITEC PASIR RIS, SINGAPORE NEW CAPACITY

RF-SOI Imager-SOI RF-SOI FD-SOI To be ready by FY26

Photonics-SOI FD-SOI Other SOI products

Max capacity upgraded from 650K up to 700K Expand our capacity up to 1M wafers/year wafers/year • Implement additional capacity to further increase • Bringing some new CIP ideas to increase SOI ramp-up throughput and improving our yield enable • Secure bulk supply through “make” strategy on Bernin 2 to reach 700K epi & on refresh • Industrialize new product flavors • Recruitment plan ongoing : more than 100 people to be hired this year

150 - 200mm POI 200mm SOI

SOITEC BERNIN 3, FRANCE SOITEC BERNIN 1, FRANCE SIMGUI SHANGHAI, CHINA

POI RF-SOI Photonics-SOI RF-SOI Power-SOI

Power-SOI Increase Bernin 3 max capacity from 500K Expanding capacity from 350K up to 450K upgraded up to 750K wafers/year wafers/year Running full at 950K wafers/year • Recruitment plan started : 100 people hired to • Ramping up to maximum loading achieve the ramp up planned this year • Implement new CIPs to further increase capacity of current assets • Preparation of 200mm pilot line for future • Maximize yield of our products opportunities • Utilization of Bernin 1 assets to support POI dynamic

SOITEC BELGIUM N.V HASSELT, BELGIUM SUBSTRATE INNOVATION CENTER - FRANCE SiC CAPACITY - PLAN UNDER EVALUATION

GaN SiC SiC

Expand Hasselt Epi capacity up to Pilot line To be ready by FY24 60K wafers/year • GaN Epiwafer fab is qualified for 150mm high volume manufacturing (HVM) • 200mm capacity in place for RF and power

~20% SiC Capacity* ~10% Emerging activities (GaN, innovation) ~5% Maintenance & IT ~20% POI ~€1.1B ~25% CAPEX SOI 300mm FY22 - FY26 Pasir Ris

(*) Excluding capex for building

SiC Capacity*

Emerging activities (GaN, innovation) Maintenance & IT

POI ~€240M CAPEX

SOI 300mm FY22 Pasir Ris

(*) Excluding capex for building

LEVER 1 LEVER 2 LEVER 3

STANDARD, AI CLOUD COMPUTING AUGMENTED & AUTOMATION TO STRENGTHEN OPERATOR OPERATIONS SCALABILITY • State-of-the-art industrial • All business applications • AR headsets for remote applications deployed: (ERP, HRIS, CRM, ...) migrated maintenance Automation, SPC, FDC, to the cloud • Operator mobile devices CMMS • Additional manufacturing to manage live inventory • Automated pattern & features like smart sampling, connected to MES defect recognition advanced R2R transferred to • Real time assets • Autonomous 200mm the cloud performance monitoring vehicles and visualization

LEVER 1 LEVER 2 LEVER 3 Bernin 2 awarded STANDARD, AI CLOUD COMPUTING AUGMENTED & AUTOMATION TO STRENGTHEN “FACTORY OF OPERATOR OPERATIONS SCALABILITY THE YEAR 2020” • State of the art industrial • All business applicationsin (ERP,France HRIS, thanks • AR headset for remote maintenance applications deployed: Automation, CRM, ...) migrated to the cloud • Operator mobile device to manage SPC, FDC, CMMS • Additional manufacturingto features Industry 4.0 live inventory connected to MES • Automated pattern & defect like smart sampling, advanced R2R • Real time assets performance recognition transferred to the cloud monitoring and visualisation • Autonomous 200mm vehicles initiatives

SOITEC PASIR RIS, SINGAPORE SOITEC BERNIN 3, FRANCE

Pasir Ris vs. Bernin 2 cost per wafer (CPW) Pasir Ris RF-SOI yield ramp-up Bernin 3 POI ramp-up management Bernin 3 POI yield ramp-up

CPW Pasir Ris

CPW Bernin 2

Pasir Ris matching Bernin2 Yield reaching Ramp-up Yield reaching competitiveness HVM target in management: HVM target in WITHIN 2 YEARS 12 MONTHS X6 THIS YEAR 12 MONTHS

REDUCING RESOURCE CONSUMPTION ACTING ON CLIMATE CHANGE ATTRACTIVE AND INCLUSIVE WORKPLACE

• Achieved –29% energy consumption • 100% renewable energy in • Engaged in “1 Jeune, 1 Solution” per unit of production vs FY16 Bernin in FY22 French program: 100 young “below 26” hired over a year • Achieved –14% water consumption • 50% renewable energy per unit of production vs FY16 in Singapore by FY24 • Women represent 30% of our engineers & 40% of our new talents • Double water recycled by FY24 • 81% of waste recycled or recovered • Quality of work life score improved by 5 points over a year

• Injury rate reduced from 10 down to 4

OPERATING LEVERAGE THROUGH CAPACITY RAMP – SCALABLE AND SUSTAINABLE AGILE OPERATION FOOTPRINT EXECUTION EXCELLENCE GROWTH AND INDUSTRY 4.0

LÉA ALZINGRE 06 Chief Financial Officer

01 02 03 FY21 FY22 MID-TERM FINANCIALS OUTLOOK FINANCIAL MODEL

STABLE REVENUES(1) STABLE EBITDA MARGIN(2) STRONG OPERATING CASH FLOW(3)

Revenues in €M EBITDA in €M EBITDA as % in revenue Operating cash flow in €M +1% at constant 34.3% exchange rates -2% and perimeter as reported 31.0% 30.7% 598 584 185 179 +73% 174 444 152

101

FY19 FY20 FY21 FY19 FY20 FY21 FY19 FY20 FY21

(1) at constant FX rate and perimeter. (2) EBITDA margin = Electronics EBITDA (EBITDA from continuing operations) / Revenue (3) Cash flow = Electronics cash flow (cash flow from continuing operations)

€M FY21 FY20 CHANGE VS FY20

% % at constant FX and scope 150/200mm wafer sales 277 276 +1% +4%

300mm wafer sales 277 294 -6% -3% Royalties and other revenues 30 28 +5% +6% ORGANIC Total revenue 584 598 -2% +1% GROWTH AT +1% REVENUE BREAKDOWN 5%

150/200mm wafer sales FY21 48% 300mm wafer sales

Royalties and other revenues 47%

37.2% Gross margin as % in revenue 34.4% 31.5% 32.7% 31.4% 150/200 mm wafer sales in €M 300 mm wafer sales in €M 26.7% Royalties and other revenues in €M

GROSS MARGIN TAILWINDS

• Favourable raw material long term agreements • Production costs under control

GROSS MARGIN HEADWINDS

• Capacity increase including depreciation expenses • Lower loading of our Bernin 1 & Bernin 2 facilities • Unfavourable FX rate

FY16 FY17 FY18 FY19 FY20 FY21

© Soitec 2021. No copying or distribution permitted. PAGE 106 1 2 3 4 5 6 FINANCE 01 CURRENT OPERATING INCOME Operating income impacted by R&D investments and by continued efforts to structure the group

€M FY21 FY20 CHANGE

Revenue 583.8 597.5 -2% Net R&D expenses up 37%, Gross profit 183.5 195.4 -6% represents around 8% of revenue: as a % of revenue 31.4% 32.7% • Increased gross R&D expenses Net R&D expenses (44.4) (32.5) +37% • Continued investment effort as a % of revenue 7.6% 5.4% • Higher depreciation - Gross R&D expenses (74.1) (66.9) +11% • Lower prototype sales - Prototype sales and others 4.5 9.0 -50% SG&A expenses up 9%, - Subsidies and income tax credit 25.2 25.4 -1% remains at around 8% of revenue: Total SG&A expenses (49.1) (45.2) +9% • Increase in charges related to as a % of revenue 8.4% 7.6% employee compensation schemes - Sales & Marketing expenses (11.7) (10.2) +15% • Higher number of staff - General and administrative expenses (37.4) (35.0) +7% • Share-based payment plans Current operating income 90.0 117.7 -24% as a % of revenue 15.4% 19.7%

€M FY21 FY20 Other operating income: Current operating income 90.0 117.7 • In FY20, other operating income Other operating income and expenses 0.4 1.8 included a gain on the disposal of Operating income 90.4 119.5 an industrial site

Net financial expenses (11.2) (4.7) Net financial loss: Net foreign exchange gain / (loss) (3.6) 0.6 • Increase in financial expenses mostly Net financial result (14.8) (4.1) due to the new issue of convertible bonds (OCEANEs 2025) Income tax (1.5) (4.9) • Net foreign exchange loss of €(3.6)M Net profit / (loss) from continuing operations 74.1 110.5 recorded in FY21 vs a gain of €0.6M Net profit / (loss) from discontinued operations (1.4) (0.9) in FY20 Net profit Group share 72.7 109.7 Income tax: EPS (Euros per share) 2.19 3.40 • Income tax continues to benefit from Diluted EPS (Euros per share) 2.16 3.32 tax loss carryforwards Number of shares 33,176,570 32,245,503 Number of diluted shares 35,014,307 33,984,168

EBITDA in €M EBITDA as % in revenue 34.3% 29.2% 31.0% 30.7%

15.6% 16.7% 185.4 179.0

152.3

90.6

36.3 41.0

FY16 FY17 FY18 FY19 FY20 FY21

€M FY21 FY20 31.6% increase in D&A, mainly resulting from continuous investments carried out (Industrial Operating income 90.4 119.5 capacity, R&D) Depreciation and amortization 59.9 45.5 Higher non-cash items mainly reflecting share based Other items 28.7 20.4 payments EBITDA 179.0 185.4 Improvement of working capital - Change in working capital 9.3 (59.1) - incl. inventories (9.4) (51.9) €174M cash generated by operating activities, up 73% - incl. receivables 0.4 (33.8) CAPEX include - incl. others 18.3 26.6 • €24M intangible assets acquisitions (including €15M - Tax paid (14.0) (25.6) capitalized R&D (€17M in FY20) Net cash generated by operating activities 174.3 100.7 • €114M tangible assets acquisition mainly for capacity - Adjusted investment flows* (136.7) (132.8) investments in Singapore and Bernin 3 - Intangible assets (24.2) (31.1) • FY20: CAPEX included €25.5M for Soitec Belgium - Tangible assets (113.5) (77.7) acquisition - Others 1.0 (24.0) Positive free cash flows at €37.6M Free cash flows 37.6 (32.1)

(*) The investing and financing cash flows shown above are taken from the IFRS statement of cash flows, adjusted to include new finance leases in the financing cash flows in the case of leaseback transactions. Note: The income and expenses related to discontinued operations are directly reported as “Net result from discontinued operations”. Down to the line “Net result after tax from continuing operations”, the Group consolidated P&L account exclusively and fully reflects the Electronics activities as well as corporate expenses.

(0.4) (0.3)

Includes: 174.3 • €321M OCEANEs 2025 issue • €95M drawing on €200M loan facility granted by 644.4 Banque des Territoires (as part of Nano 2022) • €39M bank loan in (136.7) Singapore to finance tools

191.0

Cash and cash Net cash generated Adjusted net cash Adjusted net cash Net cash generated Net impact of Forex Cash and cash equivalents at by continuing used in investing generated by by discontinued fluctuations equivalents at 31 March 2020 activities activities financing activities activities 31 March 2021

Note: The above investment and financing cash flows are taken from the IFRS cash flow statement adjusted to include new finance leases in the financing cash flow in the case of lease-back transactions

ASSETS - in €M 31 March 2021 31 March 2020 LIABILITIES AND EQUITY - in €M 31 March 2021 31 March 2020 Includes: • €10M CAPEX in Bernin 1 & 2 Intangible assets 99 87 Total equity 676 552 • €40M CAPEX in Bernin 3 Tangible assets 378 297 Long-term financial debt 612 193 • €67M CAPEX in Singapore Other non-current assets 29 24 Provisions and other non-current liabilities 44 40

Mainly DTA on tax loss carry Deferred tax assets 53 37 Total non-current liabilities 656 233 forward (+€13M over FY21) Total non-current assets 559 445 Trade payables 79 76 Inventories 124 123 Other current liabilities 121 88 Trade receivables 157 167 Short-term financial debt 36 52 Other current assets 85 75 Total current liabilities 236 216 Cash and cash equivalents 644 191 Total liabilities and equity 1,568 1,001 Total current assets 1,010 556 €648M financial debt includes mainly: Total assets 1,568 1,001 • Leasing contracts: €55M • OCEANEs : €429M • Bank loans (incl IPCEI) : €135M

+€124M 676 648 552 +€403M

245

31 March 2020 31 March 2021 31 March 2020 31 March 2021

SHAREHOLDERS’ EQUITY (€M) GROSS DEBT (€M)

644 +€453M

191 54 €(50)M 4

31 March 2020 31 March 2021 31 March 2020 31 March 2021

CASH AND CASH EQUIVALENTS (€M) NET DEBT (€M)

GUIDANCE FY22

~40% REVENUE GROWTH AT CONSTANT FX RATE ~32% EBITDA MARGIN ~€240M CAPEX

STRONG GROWTH OF REVENUE: ELECTRONICS EBITDA MARGIN CONTINUING CAPACITY INVESTMENT ~$950M (€800M at 1.2) around +40% AROUND 32% at constant FX rate vs FY21 • Singapore for SOI 300mm ramp-up • Operating leverage thanks to our Bernin 1 and Bernin 2 fabs fully loaded and better loading for • Bernin 3 for POI products Singapore fab • Investments in other strategic projects • Favourable effect of raw materials long-term supplier agreements

• Unfavourable Forex impact

REVENUE – Revenue will more than triple FY21 (Actual) FY22 FY26 (Model) between FY21 and FY26 to reach $2B FX rate @1.13 @1.20 @1.20 PROFITABILITY (@1.20 FX RATE) Revenue ($M) 668 ~950 ~2,000 – EBITDA in value more than x3 between FY21 and FY26 Revenue (€M) 584 ~800 ~1,700 – CAPEX: around €1.1B between FY22 Gross margin % 31.4% ~34% ~36% and FY26* EBITDA % Revenue 30.7% ~32% ~35% FINANCING CAPEX % Revenue 24% ~30% ~18% over FY22-26 – Sufficient cumulative operating cash flows to finance CAPEX

(*) Excluding capex for building

STRATEGIC VISION FINANCIAL MODEL FOR FY26 SUSTAINABILITY SUPPORTS FOR THE NEXT 5 YEARS OUR VALUE CREATION STRATEGY