United States Patent (19) 11 Patent Number: 6,083,859 Mangold Et Al
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US006083859A United States Patent (19) 11 Patent Number: 6,083,859 Mangold et al. (45) Date of Patent: *Jul. 4, 2000 54). BORON OXIDE-SILICON DIOXIDE MIXED 3.855,171 12/1974 Wegelhaupt et al.. OXIDE 4,347,229 8/1982 Schmid et al.. 4,749,665 6/1988 Yano et al.. 75 Inventors: Helmut Mangold, Rodenbach; 3. : with i - - - - - - - - - - - - - - - - - - - - - - - - - - - - 502/439 2- Y- a-2 he e a Manted SEK.E.S.E of 5,185,309 2/1993 Aono et al. ............................. 502/202 Park, N.J.;y, Peter Kleinschmit,s Hanau, 5,252,752 10/1993 Aono et al. ............................. 502/202 Germany OTHER PUBLICATIONS 73 Assignee: Degussa-Hills AG, Frankfurt, Germany CPI Basic Abstracts Journal; Sep. 9, 1987; No. 87-194590/ * Notice: This patent issued on a continued pros 28. ecution application filed under 37 CFR 1.53(d), and is subject to the twenty year Ullmanns Encyclopedia Industrial Chemistry; 1993; vol. patent term provisions of 35 U.S.C. A23, pp. 635-640, No Month. 154(a)(2). Chemical Abstracts; 1; Vol. 94, No. 8; Abstract 49/11N, Apr. 1980. 21 Appl. No.: 08/878,824 Ullmanns Encyclopedia der technischen Chemie; 1982; vol. 22 Filed: Jun. 19, 1997 21, pp. 464, 465, No Month. Related U.S. Application Data Ullmanns Encyclopedia der technischen Chemie; 1964, vol. 60 Provisional application No. 60/029,845, Oct. 29, 1996. 15, p. 726, No Month. 30 Foreign Application Priority Data Primary Examiner Karl Group Jun. 19, 1996 DE Germany ........................... 196 24 392 Attorney, Agent, or Firm- Pillsbury Madison & Sutro LLP (51) Int. Cl. ................................................. CO3C 3/04 57 ABSTRACT 52 U.S. Cl. .................. 501/27; 501/66; 501/133 58 Field of Search ................................ 501/27, 29, 133, Aboron oxide-silicon dioxide mixed oxide which has a BET 501/128, 66; 502/207, 237, 240 Surface of less than 100 mg, and optionally containing oxides of aluminium, titanium or Zirconium, is prepared 56) References Cited pyrogenically by flame hydrolysis. The mixed oxide is used in glass making. U.S. PATENT DOCUMENTS 2,239,551 4/1941 Dalton et al.. 6 Claims, 16 Drawing Sheets U.S. Patent Jul. 4, 2000 Sheet 1 of 16 6,083,859 TO SEPARATION FLAME PIPE JACKET H2 SiCl4 voport BME vapor + carrier gas (N2) carrier gas (N2) MIXING CHAMBER - - - - - - - - FURNACE AIR + CORE H2 U.S. Patent Jul. 4, 2000 Sheet 2 of 16 6,083,859 TO SEPARATION FLAME PIPE SiCl4 + BME AIC3 vaport voport carrier gas carrier gas (N2) (N2) - - - - FURNACE AIR + CORE H2 U.S. Patent Jul. 4, 2000 Sheet 3 of 16 6,083,859 0. 5 micron U.S. Patent Jul. 4, 2000 Sheet 4 of 16 6,083,859 U.S. Patent Jul. 4, 2000 Sheet 9 of 16 6,083,859 OOOZOO8}OO9||O’Otz,OOZ!OOO! WNNIHELLEWW/IC] O'O8OO9OO?7OO2 O OO2 GZ. O9 O LNBOABBd U.S. Patent Jul. 4, 2000 Sheet 13 of 16 6,083,859 OOOZOO81OO9||OOiz,OOZ)OOO)OO8OO9OO17OO2 WNNIHELLBWV7|Q O'OG OOt? O9Z OO?2 6,083,859 1 2 BORON OXDE-SILICON DIOXDE MIXED In a preferred embodiment the boron oxide-silicon diox OXDE ide mixed oxides according to the invention may be pre pared pyrogenically. This application is based on application no. 19624392.0 The known process of flame hydrolysis may preferably be filed in Germany on Jun. 19, 1996 and provisional applica employed for this purpose. This proceSS is described in tion No. 60/029,845 filed in the United States on Oct. 29, Ullmanns Enzyclopadie der technischen Chemie, 4th Ed., 1996, the content of which are incorporated hereinto by Vol. 21 (1982), pp. 464 and 465. reference. The boron oxide-Silicon dioxide mixed oxide according to the invention having a BET surface of less than 100 m/g, BACKGROUND OF THE INVENTION 1O preferably 10 to 80 mg/g, in particular 25 to 50 m/g, can be prepared by vaporising Silicon halides and/or organosili 1. Field of the Invention con halides, for example methyl trichlorosilane, preferably The invention relates to a boron oxide-silicon dioxide the chloride SiCl, with a vaporisable boron compound, for mixed oxide, a proceSS for its preparation, and its use. example trimethylborate, Separately or together, optionally 2. Prior Art 15 with the addition of vaporisable compounds of the metal Document DE-A 21 22 066 describes the use or pyro loids and/or metals aluminum, titanium, Zirconium, for genically produced mixed oxides of boron with Silicon, example AlCl, ZrCl, TiCl, or the like, mixing the vapours aluminum, titanium and/or iron having a boron content of 2 together with a carrier gas, for example air and/or nitrogen, to 20 wt.%, calculated as elementary boron, as a filler in in a mixer unit, preferably in a burner of known organopolysiloxane compositions (for example bouncing construction, with hydrogen as well as air and optionally putty). In particular these mixed oxides contain 5 to 10 wt. further gases Such as Oxygen and nitrogen, reacting the gases % of boron, calculated as elementary boron. These mixed in a flame, then cooling the hot gases and the Solid, Sepa oxides can be prepared by using metals and/or metal com rating the gases from the Solid, and optionally removing pounds according to Ullmanns Enzyclopadie der technis halide or raw material residues adhering to the product by a chen Chemie, (Ullmanns Encyclopedia of Industrial heat treatment with moist air. Chemistry), Vol. 15 (1964), p.726. They are preferably 25 The process according to the invention has the advantage prepared from Volatile compounds of boron and Silicon, that the trimethyl borate that is used is miscible in all aluminum, titanium and/or iron, especially the chlorides of proportions with SiCl, and it is therefore possible to adjust the aforementioned elements, in the presence of water the ratio exactly. Since the boiling point of trimethylborate formed in situ at temperatures above 800 C., i.e. by flame of 68 C. is sufficiently close to the boiling point of silicon hydrolysis. The mixed oxides obtained have a BET surface tetrachloride, it can be vaporised jointly with Silicon tetra of 100 to 400 m/g. chloride from a vaporisation unit. According to the example given in document DE-A21 22 The boron oxide-Silicon dioxide mixed oxide according to 066, 4.8 kg/h of SiCl, and 1.2 kg/h of boron trichloride are the invention, which may optionally also contain TiO, vaporised and burnt together with 1.5 m/h of hydrogen in Al-O and/or ZrO2, can be used to make high-purity glasses. a combustion chamber, under the addition of 4.2 m/h of air. 35 The high purity and the adjusted particle fineness of the The temperature in the combustion chamber is more than mixed oxide according to the invention are of particular 800 C. The resultant mixed oxide contains 82.5 wt.% of advantage. SiO2 and 17.5 wt.% of B.03 (=5 wt.% of boron) calculated as boron and has a BET surface of 180 m°/g. BRIEF DESCRIPTION OF THE DRAWINGS The known boron oxide-silicon dioxide mixed oxide has 40 The invention now will be described with respect to the the disadvantage that it occurs in Very finely divided form accompanying drawings wherein: having a BET surface greater than 100 m°/g. It is unsuitable FIG. 1 is a diagrammatic illustration of a burner arrange for use as a raw material in glass-making. ment used for Examples 1-4 of the invention; The known process has the disadvantage that boron FIG. 2 is a diagrammatic illustration of a burner arrange trichloride is used as Starting material for the boron oxide. 45 ment used for Examples 5-9 of the invention; Boron trichloride is a poisonous compound with a boiling FIG. 3 is an electron microscope photograph of the point of 12.5 C. When used at room temperature special powder of Example 2, Safety measures are therefore necessary. The commercially FIG. 4 is an electron microscope photograph of the available boron trichloride may contain noticeable amounts powder of Example 9; of poisonous phosgene as impurity. 50 FIG. 5 is a Summation curve of the number distribution of The object of the invention is therefore to prepare a boron Example 2, oxide-Silicon dioxide mixed oxide that does not have these FIG. 6 is a differential curve of the number distribution of disadvantages. Example 2, SUMMARY OF THE INVENTION FIG. 7 is a class frequency representation of the number 55 distribution of Example 2; The invention provides a boron oxide-silicon dioxide FIG. 8 is a Summation curve of the weight distribution of mixed oxide, which is characterised in that it has a BET Example 2, surface of less than 100 ml/g, preferably 10 to 80 m /g, in FIG. 9 is a differential curve of the weight distribution of particular 25 to 50 m/g. Example 2, The proportion of boron oxide may be from 0.01 to 40 wt. 60 FIG. 10 is a class frequency representation of the weight %. distribution of Example 2; In a further development of the invention the boron FIG. 11 is a Summation curve of the number distribution oxide-Silicon dioxide mixed oxide may contain a further of Example 9; oxide or further oxides of metals and/or metalloids as a FIG. 12 is a differential curve of the number distribution constituent of the mixed oxide. 65 of Example 9; Such metals or metalloids may be aluminum, titanium or FIG. 13 is a class frequency representation of the number Zirconium. distribution of Example 9; 6,083,859 3 4 FIG.