A Comparison of Gamma and Proton Radiation Effects in 200 Ghz Sige Hbts Akil K

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A Comparison of Gamma and Proton Radiation Effects in 200 Ghz Sige Hbts Akil K 2358 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 52, NO. 6, DECEMBER 2005 A Comparison of Gamma and Proton Radiation Effects in 200 GHz SiGe HBTs Akil K. Sutton, Student Member, IEEE, Becca M. Haugerud, Student Member, IEEE, A. P. Gnana Prakash, Member, IEEE, Bongim Jun, Member, IEEE, John D. Cressler, Fellow, IEEE, Cheryl J. Marshall, Member, IEEE, Paul W. Marshall, Member, IEEE, Ray Ladbury, Member, IEEE, Fernando Guarin, Member, IEEE, and Alvin J. Joseph, Member, IEEE Abstract—We present the results of gamma irradiation on third-generation SiGe HBTs demonstrate an increased proton third-generation, 200 GHz SiGe HBTs. Pre- and post-radiation dc tolerance over previous SiGe technology nodes. In this work we figures-of-merit are used to quantify the tolerance of the raised present the first study of the gamma tolerance of these devices. extrinsic base structure to Co-60 gamma rays for varying device geometries. Additionally, the impact of technology scaling on the The third-generation SiGe HBTs investigated here were fab- observed radiation response is addressed through comparisons to ricated at IBM Microelectronics (IBM 8HP) [5], and achieve a second generation, 120 GHz SiGe HBTs. Comparisons to previous peak cutoff frequency (peak ) of 200 GHz. This improvement proton-induced degradation results in these 200 GHz SiGe HBTs in peak over previous technology nodes [6], [7] was realized are also made, and indicate that the STI isolation oxide of the through fundamental changes in the physical structure of the de- device shows increased degradation following Co-60 irradiation. The EB spacer oxide, on the other hand, demonstrates increased vice, yielding a novel, reduced thermal cycle “raised extrinsic susceptibility to proton damage. Low dose rate proton testing base” structure. The SiGe base region features an uncondition- was also performed and indicate that although there is a proton ally stable, 25% peak Ge, and a C-doped SiGe profile deposited dose rate effect present in these devices, it cannot fully explain the using UHV/CVD epitaxial growth techniques [5]. Conventional observed trends. Similar trends have previously been observed for deep trench (DT) and shallow trench isolation (STI), in addition buried oxides and isolation oxides in several MOS technologies and have been attributed to increased charge yield in these oxides for to an in-situ doped polysilicon emitter, were maintained from 1.2 MeV Co-60 gamma rays when compared to 63 MeV protons. prior technology nodes. Previous investigations identified the emitter-base (EB) and STI oxide interfaces as the areas most Index Terms—EB spacer, ELDRS, gamma radiation, proton ra- diation, radiation sources, SiGe, SiGe HBT, shallow trench isola- prone to the formation of radiation induced traps. A represen- tion, technology scaling. tative 2D-MEDICI cross-section of the region of interest is de- picted in Fig. 1 (after [8]). These 200 GHz SiGe HBTs demonstrate increased proton tol- I. MOTIVATION erance when compared to earlier SiGe HBT technology nodes HE inherent robust total dose tolerance, typically to multi- (first-generation 50 GHz (IBM 5HP) and second-generation 120 T Mrad(Si) levels, of Silicon-Germanium Hetero-junction GHz (IBM 7 HP) SiGe HBTs) [4]. The aim of the present work Bipolar Transistors (SiGe HBTs) make them prime contenders is therefore two-fold; first we seek to analyze the impact of for a variety of terrestrial and space-borne integrated circuit ap- technology scaling on gamma-induced radiation damage, and plications. SiGe HBT performance characteristics continue to secondly, we wish to compare the degradation response mech- match those of III-V materials, while sharing a unique seam- anisms for proton and gamma irradiation. less integration platform with traditional low cost, high yield Si CMOS fabrication [1]. Single event upset (SEU) is a known II. EXPERIMENT concern for high-speed SiGe HBT digital circuits, and a variety A. Sample Preparation of mitigation techniques are currently under investigation to ad- dress these issues [2]. Previous studies [3], [4] have shown that Devices of varying geometry across the second- and third technology generations were chosen for testing. Third-genera- tion devices with an emitter-area of m and Manuscript received July 2005; revised December 2005. This work was sup- ported in part by DTRA under the Radiation Hardened Microelectronics Pro- m were chosen as the primary device geometries gram, in part by NASA-GSFC under the NASA Electronic Parts and Packaging of interest for comparing proton and gamma radiation damage. (NEPP) Program, in part by IBM, in part by DARPA, and in part by the Georgia Additional devices ( m m Electronic Design Center at Georgia Tech. A. K. Sutton, B. M. Haugerud, A. P. G. Prakash, B. Jun, and J. D. Cressler and m ) were included in the examina- are with the School of Electrical and Computer Engineering, Georgia Institute tion of geometrical dependence, proton dose rate effects, and of Technology, Atlanta, GA 30308 USA (e-mail:[email protected]). high temperature annealing. The impact of technology scaling C. J. Marshall and P. W. Marshall are with the NASA-GSFC, Greenbelt, MD 20771 USA. on gamma-induced radiation degradation included second-gen- R. L. Ladbury is with the Muinez Engineering, Houston, TX 77001 USA. eration devices with m and m . F. Guarin is with the IBM Microelectronics, East Fishkill, NY 12533 USA. Samples were received on wafer and were diced and pack- A. J. Joseph is with the IBM Microelectronics, Essex Junction, VT 05452 USA. aged into 28-pin DIPs with two or three devices bonded out per Digital Object Identifier 10.1109/TNS.2005.860728 package. All terminals (emitter, base, collector and substrate) of 0018-9499/$20.00 © 2005 IEEE SUTTON et al.: COMPARISON OF GAMMA AND PROTON RADIATION EFFECTS IN 200 GHz SiGe HBTs 2359 TABLE I APPROXIMATE INCREMENTAL DOSE RATE COMPARISON FOR THE PROTON AND GAMMA IRRADIATION OF SECOND AND THIRD-GENERATION DEVICES TABLE II APPROXIMATE INCREMENTAL DOSE RATE COMPARISON FOR THE PROTON AND GAMMA IRRADIATION OF THIRD-GENERATION DEVICES Fig. 1. MEDICI simulation cross section showing the EB and CB space charge regions and their proximity to the trap regions of interest. the devices were grounded during the irradiation. Pre-radiation Cumulative dose rates in this case ranged from 100 krad(Si) to characterization was done at the facility and each device irradi- 3Mrad(Si) as depicted in Table II. Sample sizes for this exper- ated to a given dose with measurements being made in between iment ranged from two to four devices per geometry each ex- incremental dose steps (stepped-stress technique). posed in a stepped-stress fashion. The results of several experiments are presented in this work, each with varying sample sizes. The comparisons between the C. Proton Exposure Facility second and third generation technologies as well as the proton The 63.3 MeV proton irradiation was performed at the dose rate experiments featured sample sizes of one transistor Crocker Nuclear Laboratory at the University of California at per geometry and radiation source. Additional experiments fo- Davis. The dosimetry measurements used a five-foil secondary cusing only on the differences in the gamma and proton response emission monitor calibrated against a Faraday cup. The radi- of the third-generation device featured two to four transistors ation source (Ta scattering foils) was located several meters per geometry and radiation source. In such cases results are pre- upstream of the target to establish a beam spatial uniformity of sented as the ensemble average with error bars representing the about 15% over a 2.0 cm radius circular area. Beam currents maximum and minimum data bounds. from about 20 to 100 nA allowed testing with proton fluxes from to proton/cm sec. The dosimetry system B. Gamma Exposure Facility has been previously described [9], [10], and is accurate to about The 1.2 MeV Gamma irradiation was performed using a 10%. Shepard Model 81 Co-60 source at the NASA Goddard Space A total of three proton experiments are reported on in this Flight Center Radiation Effects Facility. The dose rate was work. As with the gamma investigation, samples were exposed held constant at approximately 30 rad(Si)/s and the dose was with all terminals grounded for all irradiations. In the first exper- uniform to within 10% across all test samples, as determined iment, comparing second and third generation devices, proton using an ion chamber probe. In accordance with MIL-STD 883 fluences ranged from p/cm to p/cm , cor- Method 1019.6, a Pb/Al box was used to decrease the flux of responding to equivalent gamma doses of 135 krad(Si) to 6 733 secondary gammas and ensure a monochromatic gamma ray krad(Si) as depicted in Table I. The dose rate was 2 krad(Si)/s spectrum. and one device per geometry was exposed in a stepped-stress A total of two gamma experiments are reported on in this fashion. work. In both cases, all devices were irradiated with all termi- The second experiment focused only on the third-generation nals grounded inside of a black conductive foam, housed in a devices which were exposed to proton fluences ranging from conductive black box. In both experiments, samples were im- p/cm to p/cm corresponding to equiv- mediately measured after each incremental dose and then irra- alent gamma doses of approximately 100 krad(Si) to 3 Mrad(Si) diated to the next dose level. In the first experiment, measure- respectively as depicted in Table II. The dose rate was constant ments were taken at various cumulative gamma doses from 92 at approximately 1 krad(Si)/s. Two to four devices per geometry krad(Si) to 3 792 krad(Si) as depicted in Table I.
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