Lecture 7 Work Function; Electron Emission

Total Page:16

File Type:pdf, Size:1020Kb

Lecture 7 Work Function; Electron Emission Lecture 7 Work Function; Electron Emission Outline: 1. Work Function 2. Electron Emission A. Thermionic Emission B. Field Emission C. Secondary Electron Emission 3. Measurements of Work Function References: 1) Zangwill, p.57-63 2) Woodruff & Delchar, pp. 410-422, 461-484 3) Luth, pp.336, 437-443, 464-471 4) A. Modinos, “Field, Thermionic and Secondary Electron Spectroscopy”, Plenum, NY 1984. Lecture 7 1 7.1 Work Function: Uniform Surfaces • The “true work function” e φ of a uniform surface of an electronic conductor is defined as the difference between the electrochemical potential µ of the electrons just inside the conductor, and the electrostatic (− Φ ) potential energy e o of an electron in the vacuum just outside •µ is work required to bring an electron isothermally from infinity to solid − Φ e o ∂G Energy φ µ = (5.1) e ∂n µ e T ,P φ = − Φ − µ µ e e o (5.2) µ − eΦ φ = −Φ − (5.3) I o e distance • Note: µ is function of internal AND surface/external (e.g., shifting charges, dipoles) conditions; • We can define quantity µ which is function of internal state of the solid µ = µ + eΦ Average electrostatic potential inside Chemical potential of electrons: I Lecture 7 2 Work Function • The Fermi energy [E F], the highest filled orbital in a conductor at T=0K, (− Φ ) µ is measured with respect to e I and is equivalent to . • We can write: φ = − Φ + Φ − µ e e o e I (5.4) µ φ = ∆Φ − (5.5) e • ∆Φ depends on surface structure and adsorbed layers. The variation in φ for a solid is contained in ∆Φ . • What do we mean by potential just outside the surface??? Lecture 7 3 Potential just outside the surface The potential experienced by an electron just outside a conductor is: k e e Nm 2 V (r) = − e = − = 99.8 ×10 9 (5.6) πε 4r 16 o C Φ For a uniform surface this corresponds to o in (5.1): V (r) → 0 as r → ∞ [in mV range for r ≥10 3 Å] In many applications, an accelerating field, F, is applied: k e V (r) = −Fr − e (5.7) 4r dV = 0 dr r=r0 e 2/1 1 9.1 ×10 −5 r = k = m (5.8) o e 4 F 2/1 F 2/1 − 2/1 δφ = () 2/1 = × 5 2/1 δφ ∝ F keeF 79.3 10 F Volts ( F in Volts/m) (5.9) = 4 = × −7 = δφ = For F 10 Volts/mLecture (100 7 V/cm), ro 9.1 10 m 1900 Å 48.3 mV Selected Values of Electron Workfunctions* Element φ (eV) Element φ (eV) Element φ (eV) Ag 4.26 Cu 4.65 Si 4.85 Ag (100) 4.64 Cu(100) 4.59 Ru 4.71 Ag (110) 4.52 Cu(110) 4.48 Ta 4.25 Ag (111) 4.74 Cu(111) 4.98 Ta (100) 4.15 Ba 2.52 Ir (110) 5.42 Ta (110) 4.80 C 5.0 Ir(111) 5.76 Ta (111) 4.00 Ce 2.9 K 2.30 Ti 4.53 Cr 4.5 LaB 6 2.66 W 4.55 Cs 2.14 Mo 4.60 Zr 4.05 Units: eV electron Volts; *Reference: CRC handbook on Chemistry and Physics version 2008, p. 12-114. Lecture 7 5 Work Function: Polycrystalline Surfaces Consider polycrystalline surface with “patches” of different Φ i, oi j, … k l workfunction, and different value of surface potential m m o p th Φ At small distance ro above i patch electrostatic potential is oi At distances large w/r/t/ patch dimension: Φ = Φ = o ∑ fi oi , fi fractional area of i th patch i So mean work function is given by: φ = φ e ∑ ief i (5.10) i - at low applied field, electron emission controlled by: eφ - at high field (applied field >> patch field) φ electron emission related to individual patches: e i On real surfaces, patch dimension < 100Å, if ∆φ~ 2 eV then patch field F ~ 2V/(10 -6 cm ) ~ 2 x 10 6 Volts/cm. work required to bring an electron from infinity to solid Lecture 7 6 Workfunction Factors that influence work function differences on clean surfaces: • Adsorbed layers • Surface dipoles (cf. Zangwill, p 57) • Smooth surface: electron density “spillover” • Electron density outside rough surface • For tungsten eφ, eV W plane 5.70 (110) 4.93 (211) 4.39 (111) 4.30 (116) Lecture 7 7 Work function change upon adsorption • Charge transfer at interface: electro positive (K, Na, …) or electro negative (Cl, O, F, …) • Model dipole layer as parallel plate capacitor: nµ − ∆φ = µ - dipole moment [C m]; n - surface charge density [m 2- ]; ε = 85.8 ×10 12 [C /Vm ] ε o o Suppose ∆φ = 1.5V for 1 ×10 15 /cm 2 O atoms on W (100). What is µ? For molecules with a permanent dipole moment: Lecture 7 8 7.2.1Electron Sources: Thermionic Emission Thermionic emission occurs when sufficient heat is supplied to the emitter so that e’s can overcome the work function, the energy barrier of the filament, Ew, and escape from it • Richardson’s Equation : (derivation – aside) φ 2 e Current density, j: j = A 1( − r)T exp( − ) o kT 4πmek 2 Amp A = =120 4. r = reflection coefficient; o h3 cm 2 deg 2 • Richardson plot : ln(j/T 2) vs 1/T ⇒ ⇒ straight line Lecture 7 9 7.2.1 Electron Emission: Thermionic Emission • Richardson plot : ln(j/T 2) vs 1/T ⇒ ⇒ straight line • Schottky Plot φ → Φ − 2/1 e e o bF (cf. eq.5.9) ln j vs F 2/1 ⇒ straight line Lecture 7 10 7.2.2 Field Electron Emission • Electron tunneling through low, thin barrier – Field emission, when F>3 ×10 7 V/cm ~ 0.3 V/Å • General relation for electron emission in high field: ∞ = j e∫ P(EZ , F)v(EZ )dE Z 0 • P is given by WKB approximation 2 3/2 m 2/1 l P = const ×exp − (V − E ) 2/1 dz h ∫ Z 0 1 φ 1 φ 2/3 • If approximate barrier by triangle: ~ φ 2/1 ~ ∫ 2 F 2 F 2 3/2 m 2/1 φ 2/3 P = const ×exp − h F • Fowler – Nordheim eqn, including potential barrier: 2 2/3 2/3 2/1 − F φ f (y) e F j = 54.1 ×10 6 t 2 (y)exp − 83.6 ×10 7 ; where y = φ F φ Lecture 7 11 How do we get high fields: Field Emission Microscope! Get high field by placing sharp tip at center of spherical tube. Mag: R/r ~ 5cm/10 -5cm ~ 500,000 F = cV; c ~ 5/r F ~ 5 x 10 7 V/cm For V = 2,500 Volts. W single crystal wire as tip. Typical pattern on phosphor screen Lecture 7 12 Field Emission Properties Lecture 7 13 7.2.3 Secondary Electron Emission Electrons emitted from surfaces after electron bombardment In general complicated phenomenon involving several interrelated processes Generally classify secondaries into three categories: - (I) Elastic ; - (II) Inelastic; - (III) “true” secondaries (KE < 50 eV) Total coefficient for secondary emission, σ= j2/ji = r + η + δ j2 For metals, max values: r ~ 0.2 (Ep ~ eV); ~ 0.02 (large Ep) η~ 0.3 to 0.4; δ~ 0.5 to 1.8 (Ep ~ few hundred eV) σ j For insulators, can be MUCH higherLecture (~ 20!!!!) 7 1 14 Secondary Electron Emission • Establishment of stable potential for insulators and dielectric materials In practice, steady state potential reached by dielectic is due mainly to incomplete extraction of secondary electrons • For metals and semiconductors: Correlation between δ and density, ρ Lecture 7 15 7.3 Measurements of Workfunction Absolute value of φφφ A. Photoemission φ = hν −W W = full width of energy distribution B. Thermionic Emission (Richardson’s Equation) C. Field Emission Retarding Potential (FERP) Workfunction difference A. Shelton Method B. Vibrating Capacitor – Kelvin Probe http://www.kelvinprobe.info/ Lecture 7 16.
Recommended publications
  • Field Electron Emission Characteristic of Graphene
    Field electron emission characteristic of graphene Weiliang Wang, Xizhou Qin, Ningsheng Xu, and Zhibing Li* State Key Lab of Optoelectronic Materials and Technologies, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China Abstract The field electron emission current from graphene is calculated analytically on a semiclassical model. The unique electronic energy band structure of graphene and the field penetration in the edge from which the electrons emit have been taken into account. The relation between the effective vacuum barrier height and the applied field is obtained. The calculated slope of the Fowler-Nordheim plot of the current-field characteristic is in consistent with existing experiments. Keywords: field electron emission, graphene, field penetration PACS: 73.22.Pr, 79.70.+q 1. Introduction The cold field electron emission (CFE) as a practical microelectronic vacuum electron source , that is driven by electric fields of about ten volts per micrometer or less, has been demonstrated by the Spindt-type cathodes, which is basically micro-fabricated molybdenum tips in gated configuration [1] . In recent years, much interest has turned to the nano-structures, such as the carbon nanotubes and nanowires of various materials [2, 3], for that the high aspect ratios of these materials naturally lead to high field enhancement at the tips of the emitters thereby lower the threshold of macroscopic fields for significant emission. So far, most of the experimental efforts and theoretical studies on the possible applications and the physical mechanism of CFE have been concentrated on the quasi one-dimensional structures, such as carbon nanotubes and various nanowires.
    [Show full text]
  • Surface Plasmons and Field Electron Emission in Metal Nanostructures
    Surface Plasmons and Field Electron Emission In Metal Nanostructures N. Garcia1 and Bai Ming2 1. Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas, Serrano 144, Madrid 28006 (Spain) and Laboratório de Filmes Finos e Superfícies, Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476, 88.040-900, Florianópolis, SC, (Brazil) 2. Electromagnetics laboratory, School of Electronic Information Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China) Abstract In this paper we discuss the field enhancement due to surface plasmons resonances of metallic nanostructures, in particular nano spheres on top of a metal, and find maximum field enhancement of the order of 102, intensities enhancement of the order of 104. Naturally these fields can produce temporal fields of the order of 0.5V/Å that yield field emission of electrons. Although the fields enhancements we calculated are factor of 10 smaller than those reported in recent experiments, our results explain very well the experimental data. Very large atomic fields destabilize the system completely emitting ions, at least for static field, and produce electric breakdown. In any case, we prove that the data are striking and can solve problems in providing stabilized current of static fields for which future experiments should be done for obtaining pulsed beams of electrons. PACS numbers: 79.70.+q, 36.40.Gk, 79.60.-i Electrons are emitted from surfaces due to the photoelectron effect when the light energy that illuminates the surface is larger than its work function. But also more interesting with the development of pulsed lasers are the multiphoton processes[1,2].
    [Show full text]
  • New Thermal Field Electron Emission Energy Conversion Method VE Ptitsin
    View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Electronic Sumy State University Institutional Repository PROCEEDINGS OF THE INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATIONS AND PROPERTIES Vol. 1 No 4, 04NEA03(4pp) (2012) New Thermal Field Electron Emission Energy Conversion Method V.E. Ptitsin* Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26, Rizhsky Pr., 190103 St. Petersburg, Russia New thermal field electron emission energy conversion method for vacuum electron-optical systems (EOS) with a nanostructured surface electron sources is offered and developed. Physical and numerical modeling of an electron emission and transport processes for different EOS is carried out. It is shown that at the specific configuration of electrostatic and magnetic fields in the EOS offered method permits to realize energy conversion processes with high efficiency. Keywords: Energy conversion, Thermal field electron emission, Nanostructures. PACS numbers: 84.60. – h, 79.70. + q, 85.45.Db 1. INTRODUCTION (less 50 V/μm), some NS (ZrO2/W and ZrO2/Mo) at temperatures of substance NS ≈ 1900 K possess an Achievements of last decades in area of micro-and abnormally high reduced brightness (to 106 A/(cm2 nanotechnology promoted revival of scientific interest sr V)) and high stability of thermal field emission to a problem of direct transformation of thermal and properties. The found out (in specified above physical light energy to electric energy. As a result of conditions) phenomenon of sharp increase NS emission development of nanotechnology methods researchers ability has been named by "abnormal thermal field had new possibilities for use in the workings out of the emission” (ATFE).
    [Show full text]
  • Study of Velocity Distribution of Thermionic Electrons with Reference to Triode Valve
    Bulletin of Physics Projects, 1, 2016, 33-36 Study of Velocity Distribution of Thermionic electrons with reference to Triode Valve Anupam Bharadwaj, Arunabh Bhattacharyya and Akhil Ch. Das # Department of Physics, B. Borooah College, Ulubari, Guwahati-7, Assam, India # E-mail address: [email protected] Abstract Velocity distribution of the elements of a thermodynamic system at a given temperature is an important phenomenon. This phenomenon is studied critically by several physicists with reference to different physical systems. Most of these studies are carried on with reference to gaseous thermodynamic systems. Basically velocity distribution of gas molecules follows either Maxwell-Boltzmann or Fermi-Dirac or Bose-Einstein Statistics. At the same time thermionic emission is an important phenomenon especially in electronics. Vacuum devices in electronics are based on this phenomenon. Different devices with different techniques use this phenomenon for their working. Keeping all these in mind we decided to study the velocity distribution of the thermionic electrons emitted by the cathode of a triode valve. From our work we have found the velocity distribution of the thermionic electrons to be Maxwellian. 1. Introduction process of electron emission by the process of increase of Metals especially conductors have large number of temperature of a metal is called thermionic emission. The free electrons which are basically valence electrons. amount of thermal energy given to the free electrons is Though they are called free electrons, at room temperature used up in two ways- (i) to overcome the surface barrier (around 300K) they are free only to move inside the metal and (ii) to give a velocity (kinetic energy) to the emitted with random velocities.
    [Show full text]
  • Alkamax Application Note.Pdf
    OLEDs are an attractive and promising candidate for the next generation of displays and light sources (Tang, 2002). OLEDs have the potential to achieve high performance, as well as being ecologically clean. However, there are still some development issues, and the following targets need to be achieved (Bardsley, 2001). Z Lower the operating voltage—to reduce power consumption, allowing cheaper driving circuitry Z Increase luminosity—especially important for light source applications Z Facilitate a top-emission structure—a solution to small aperture of back-emission AMOLEDs Z Improve production yield These targets can be achieved (Scott, 2003) through improvements in the metal-organic interface and charge injection. SAES Getters’ Alkali Metal Dispensers (AMDs) are widely used to dope photonic surfaces and are applicable for use in OLED applications. This application note discusses use of AMDs in fabrication of alkali metal cathode layers and doped organic electron transport layers. OLEDs OLEDs are a type of LED with organic layers sandwiched between the anode and cathode (Figure 1). Holes are injected from the anode and electrons are injected from the cathode. They are then recombined in an organic layer where light emission takes place. Cathode Unfortunately, fabrication processes Electron transport layer are far from ideal. Defects at the Emission layer cathode-emission interface and at the Hole transport layer anode-emission interface inhibit Anode charge transfer. Researchers have added semiconducting organic transport layers to improve electron Figure 1 transfer and mobility from the cathode to the emission layer. However, device current levels are still too high for large-size OLED applications. SAES Getters S.p.A.
    [Show full text]
  • Electron Emission from 2 Dimensional Structures
    Analytical treatment of cold field electron emission from a nanowall emitter XIZHOU QIN, WEILIANG WANG, NINGSHENG XU, ZHIBING LI* State Key Laboratory of Optoelectronic Materials and Technologies School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, P.R. China RICHARD G. FORBES Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom This paper presents an elementary, approximate analytical treatment of cold field electron emission (CFE) from a classical nanowall (i.e., a blade-like conducting structure situated on a flat conducting surface). A simple model is used to bring out some of the basic physics of a class of field emitter where quantum confinement effects exist transverse to the emitting direction. A high-level methodology is presented for developing CFE equations more general than the usual Fowler-Nordheim-type (FN-type) equations, and is applied to the classical nanowall. If the nanowall is sufficiently thin, then significant transverse-energy quantization effects occur, and affect the overall form of theoretical CFE equations; also, the tunnelling barrier shape exhibits "fall-off" in the local field value with distance from the surface. A conformal transformation technique is used to derive an 1 analytical expression for the on-axis tunnelling probability. These linked effects cause complexity in the emission physics, and cause the emission to conform (approximately) to detailed regime-dependent equations that differ
    [Show full text]
  • 11.5 FD Richardson Emission
    Thermoionic Emission of Electrons: Richardson effect Masatsugu Sei Suzuki Department of Physics, SUNY at Binghamton (Date: October 05, 2016) 1. Introduction After the discovery of electron in 1897, the British physicist Owen Willans Richardson began work on the topic that he later called "thermionic emission". He received a Nobel Prize in Physics in 1928 "for his work on the thermionic phenomenon and especially for the discovery of the law named after him". The minimum amount of energy needed for an electron to leave a surface is called the work function. The work function is characteristic of the material and for most metals is on the order of several eV. Thermionic currents can be increased by decreasing the work function. This often- desired goal can be achieved by applying various oxide coatings to the wire. In 1901 Richardson published the results of his experiments: the current from a heated wire seemed to depend exponentially on the temperature of the wire with a mathematical form similar to the Arrhenius equation. J AT 2 exp( ) kBT where J is the emission current density, T is the temperature of the metal, W is the work function of the metal, kB is the Boltzmann constant, and AG is constant. 2. Richardson’s law We consider free electrons inside a metal. The kinetic energy of electron is given by 1 ( p 2 p 2 p 2 ) p 2m x y z Fig. The work function of a metal represents the height of the surface barrier over and above the Fermi level. Suppose that these electrons escape from the metal along the positive x direction.
    [Show full text]
  • Determination of Filament Work Function in Vacuum by Paul Lulai
    Determination of Filament Work Function in Vacuum by Paul Lulai John L Vossen Memorial Award Recipient October 2001 Objective: The objective of this experiment is to experimentally determine the work function (f) of a filament. This experiment will also demonstrate that work function is a property of the surface of the sample and has very little to do with the bulk of the sample. In this process, students will use data to determine an equation that models the relationship between temperature and resistance of a filament. Students will also construct a system for conducting research in vacuum. A Review of Work Function and Thermionic Emission: The energy required to remove an electron from the Fermi-level of a metal and free it from the influence of that metal is a property of the metal itself. This property is known as the metal’s work function (f) (Oxford Paperback Reference, 1990). Before the advent of transistors, vacuum tubes were used to amplify signals. It requires less energy to remove an electron from a vacuum tube’s filament if the work function of the filament is low. As current flows through a circuit of two dissimilar metals heat is absorbed at one junction and given up at the other. It has recently been discovered that if the metals used have low work functions this process (known as the Peltier Effect) can occur at an efficiency of 70-80%. This process shows promise for uses ranging from cooling electronics to more industrial cooling processes. How well electrons can be removed from a heated filament depends on that filaments work function.
    [Show full text]
  • Core-Level Photoemission and Work-Function Investigation of Na on Cu(110) C
    University of Rhode Island DigitalCommons@URI Physics Faculty Publications Physics 1993 Core-Level Photoemission and Work-Function Investigation of Na on Cu(110) C. Su X. Shi See next page for additional authors Follow this and additional works at: https://digitalcommons.uri.edu/phys_facpubs Terms of Use All rights reserved under copyright. Citation/Publisher Attribution Su, C., Shi, X., Tang, D., Heskett, D., & Tsuei, K.-D. (1993). Core-level photoemission and work-function investigation of Na on Cu(110). Physical Review B, 48(16), 12146-12150. doi: 10.1103/PhysRevB.48.12146 Available at: http://dx.doi.org/10.1103/PhysRevB.48.12146 This Article is brought to you for free and open access by the Physics at DigitalCommons@URI. It has been accepted for inclusion in Physics Faculty Publications by an authorized administrator of DigitalCommons@URI. For more information, please contact [email protected]. Authors C. Su, X. Shi, D. Tang, David R. Heskett, and K. -D. Tsuei This article is available at DigitalCommons@URI: https://digitalcommons.uri.edu/phys_facpubs/229 PHYSICAL REVIEW B VOLUME 48, NUMBER 16 15 OCTOBER 1993-II Core-level photoemission and work-function investigation of Na on Cu(110) C. Su, X. Shi, D. Tang, and D. Heskett Department ofPhysics, University ofRhode Island, Kingston, Rhode Island 02881 K.-D. Tsuei Department ofPhysics, Brookhaven National Laboratory, Upton, New York 11973 (Received 19 November 1992; revised manuscript received 12 April 1993) Core-level photoemission, low-energy electron diffraction (LEED), and work-function change mea- surements have been carried out to study the coverage dependence of Na/Cu(110) at room temperature.
    [Show full text]
  • Work Function and Process Integration Issues of Metal
    WORK FUNCTION AND PROCESS INTEGRATION ISSUES OF METAL GATE MATERIALS IN CMOS TECHNOLOGY REN CHI NATIONAL UNIVERSITY OF SINGAPORE 2006 WORK FUNCTION AND PROCESS INTEGRATION ISSUES OF METAL GATE MATERIALS IN CMOS TECHNOLOGY REN CHI B. Sci. (Peking University, P. R. China) 2002 A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE OCTOBER 2006 _____________________________________________________________________ ACKNOWLEGEMENTS First of all, I would like to express my sincere thanks to my advisors, Prof. Chan Siu Hung and Prof. Kwong Dim-Lee, who provided me with invaluable guidance, encouragement, knowledge, freedom and all kinds of support during my graduate study at NUS. I am extremely grateful to Prof. Chan not only for his patience and painstaking efforts in helping me in my research but also for his kindness and understanding personally, which has accompanied me over the past four years. He is not only an experienced advisor for me but also an elder who makes me feel peaceful and blessed. I also greatly appreciate Prof. Kwong from the bottom of my heart for his knowledge, expertise and foresight in the field of semiconductor technology, which has helped me to avoid many detours in my research work. I do believe that I will be immeasurably benefited from his wisdom and professional advice throughout my career and my life. I would also like to thank Prof. Kwong for all the opportunities provided in developing my potential and personality, especially the opportunity to join the Institute of Microelectronics, Singapore to work with and learn from so many experts in a much wider stage.
    [Show full text]
  • Schottky Barrier Height Dependence on the Metal Work Function for P-Type Si Schottky Diodes
    Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes G¨uven C¸ ankayaa and Nazım Uc¸arb a Gaziosmanpas¸a University, Faculty of Sciences and Arts, Physics Department, Tokat, Turkey b S¨uleyman Demirel University, Faculty of Sciences and Arts, Physics Department, Isparta, Turkey Reprint requests to Prof. N. U.; E-mail: [email protected] Z. Naturforsch. 59a, 795 – 798 (2004); received July 5, 2004 We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) hav- ing different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S = φb/φm) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 1013 1/eV per cm2, and the average pinning position of the Fermi level as 0.661 eV below the conduction band. Key words: Schottky Diodes; Barrier Height; Series Resistance; Work Function; Miedema Electronegativity. 1. Introduction ear dependence should exist between the φb and the φm. Corresponding to this, SB heights of various el- The investigation of rectifying metal-semiconductor emental metals, including Au, Ti, Pt, Ni, Cr, have contacts (Schottky diodes) is of current interest for been reported [14 – 16].
    [Show full text]
  • The Work Function of Sub-Monolayer Cesium-Covered Gold: a Photoelectron Spectroscopy Study
    SLAC-PUB-13262 June 2008 The work function of sub-monolayer cesium-covered gold: A photoelectron spectroscopy study J. L. LaRuea, J. D. Whitea, N. H. Nahlera, Z. Liub, Y. Sunb, P. A. Pianettab, D. J. Auer- bach, A. M. Wodtkea ABSTRACT Using visible and X-ray photoelectron spectroscopy we measured the work function of a Au(111) surface at a well-defined sub-monolayer coverage of Cs. For a Cs coverage producing a photoemission maximum with a He-Ne laser, the work function is 1.61 ± 0.08 eV consistent with previous assumptions used to analyze vibrationally promoted electron emission. A discussion of possible Cs layer structures is also presented. a Dept. of Chemistry and Biochemistry, University of California, Santa Barbara, CA, 93106-9510 b Stanford Synchrotron Radiation Laboratory, Stanford, CA, 94309 Submitted to Journal of Chemical Physics Work supported in part by US Department of Energy contract DE-AC02-76SF00515 INTRODUCTION Low work function solids have recently attracted interest in the field of non-adiabatic molecule-surface energy transfer due to the observation of vibrationally promoted elec- tron emission 1-4. In those studies, NO molecules with up to 3.65 eV vibrational energy were prepared in a molecular beam using stimulated emission pumping 5. When these molecules collided with a solid surface whose work function was estimated to lie be- tween 1.3 and 1.6 eV, electron ejection into the gas-phase was observed. A vibrational threshold for electron emission near Evib = 1.76 eV, the energy for NO(v = 8) was taken as key evidence for direct conversion of molecular vibration to solid electronic excitation.
    [Show full text]