Rectifier Diode Avalanche Diode

DS 9 DSA 9

Rectifier Diode VRRM = 800-1800 V Avalanche Diode IF(RMS) = 18 A IF(AV)M = 11 A

ÿ① DO-203 AA VRSM V(BR)min VRRM Standard Avalanche A C C V V V Types Types

900 800 DS 9-08F

1300 1300 1200 DS 9-12F DSA 9-12F 1700 1750 1600 DSA 9-16F A 1900 1950 1800 DSA 9-18F M5 ① Only for Avalanche Diodes A = Anode C = Cathode

Symbol Test Conditions Maximum Ratings Features ● International standard package, I T = T 18 A F(RMS) VJ VJM JEDEC DO-203 AA I T = 150°C; 180° sine 11 A F(AVM) case ● Planar glassivated chips m PRSM DSA types, TVJ = TVJM, tp = 10 s 4.5 kW Applications I T = 45°C; t = 10 ms (50 Hz), sine 250 A FSM VJ ● Supplies for DC power equipment V = 0 t = 8.3 ms (60 Hz), sine 265 A R ● DC supply for PWM inverter ● TVJ = TVJM t = 10 ms (50 Hz), sine 200 A Field supply for DC motors ● VR = 0 t = 8.3 ms (60 Hz), sine 220 A Battery DC power supplies I2t T = 45°C t = 10 ms (50 Hz), sine 310 A2s VJ Advantages V = 0 t = 8.3 ms (60 Hz), sine 295 A2s R ● Space and weight savings 2 ● TVJ = TVJM t = 10 ms (50 Hz), sine 200 A s Simple mounting 2 ● VR = 0 t = 8.3 ms (60 Hz), sine 190 A s Improved temperature and power cycling T -40...+180 °C VJ ● ° Reduced protection circuits TVJM 180 C ° Tstg -40...+180 C

Md Mounting torque 2.2-2.8 Nm 19-25 lb.in. Weight 5gDimensions in mm (1 mm = 0.0394")

Symbol Test Conditions Characteristic Values £ IR TVJ = TVJM; VR = VRRM 3mA ° £ VF IF = 36 A; TVJ = 25 C 1.4 V

VT0 For power-loss calculations only 0.85 V W rT TVJ = TVJM 15 m

RthJC DC current 2.0 K/W 180° sine 2.17 K/W

RthJH DC current 3.0 K/W dS Creepage distance on surface 2.0 mm dA Strike distance through air 2.0 mm a Max. allowable acceleration 100 m/s2

Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

50 300 1000

VR = 0 V A A 800A2s typ. lim. 250 40 50Hz, 80%VRRM 600 IFSM I T = 45°C I2t F 200 VJ T = 180°C 30 VJ 400 T = 180°C VJ 150 TVJ= 25°C 20 T =45°C 100 VJ 200 T =180°C 10 VJ 50

0 0 100 0.00.20.40.60.81.01.21.41.6V 10-3 10-2 10-1 100 s 101 11023456789ms

VF t t Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I2t versus time (1-10 ms)

IFSM: crest value, t: duration 25 25 DC W A d = 180° sin

RthJA : d = 120° 20 20 d = 60° 8.3 K/W d = 30° PF IF(AV)M 13 K/W (CU80x80) 15 15 18 K/W

10 10 DC 180° sin 120° 5 60° 5 30°

0 0 0 5 10 15A 2000 50 100 150°C 200 0 50 100 150 200°C 250 T IF(AV)M amb Tcase Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 5 RthJH for various conduction angles d: K/W 30° 60° dRthJH (K/W) 4 120° 180° DC 3.0 ° ZthJH DC 180 3.35 ° 3 120 3.56 60° 4.0 30° 4.64 2 Constants for ZthJH calculation:

iR (K/W) t (s) 1 thi i 1 0.095 0.00032 2 0.515 0.0102 0 3 1.39 0.360 10-3 10-2 10-1 100 101 102 103 s 104 4 1.0 2.30 t Fig. 6 Transient thermal impedance junction to heatsink

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