Front Cover v2FINAL02.qxp 25/2/11 10:44 Page 1
III-V logic Research suceeds on on-axis silicon
Lower temp MOCVD Plasma slashes hydrogen impurities
Conductive polymers Cutting charge dissipation in GaN, ZnO processing Shine a challenging light Nitride laser reliability Multi-junction cells New approach exposes device sub-structure
Triple junction PV Tuning the best performance with quantum wells
Emission control Burning beats scrubbing for LEDs
Research review LED droop debate rages on
Nano Boost for thermoelectric
An Angel Business Communications publication March 2011 Volume 17 Number 2 HIGHER PRODUCTIVITY // With almost 30 years of experience AIXTRON stands for proven engineering power and dedicated cus tomer support: Our equipment serves a diverse range of customers to manufacture highest LED volumes at lowest cost.
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SMARTER RESOURCES // AIXTRON’s intelligent equipment concept enables optimized use of resources: The results are extremely low consumption of consumables, minimized maintenance requirements and optimized utilization of human resources.
AIXTRON started in 1983 and is today a leading provider of deposition equipment to the semiconductor industry. With our advanced solutions customers worldwide build components for electronic as well as opto-electronic applications. As pace maker in our line of industry we are keeping always one step ahead.
AIXTRON SE / KAISERSTRASSE 98 / 52134 HERZOGENRATH / GERMANY / [email protected] / WWW.AIXTRON.COM
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CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY editorialview
March 2011 Volume 17 Number 2
Editor-in-Chief David Ridsdale [email protected] +44 (0)1923 690210
Consultant Editor Richard Stevenson PhD [email protected] +44 (0)1291 629640
News Editor Dr. Su Westwater [email protected]
Director of SOLAR & IC Publishing Jackie Cannon [email protected] +44 (0)1923 690205
Account Managers Shehzad Munshi [email protected] +44 (0)1923 690215 Tommy Beazley [email protected] +44 (0)1923 690222 III-V logic USA Representatives Brun Media Tom Brun E: [email protected] Tel: 724 539-2404 Where will we be in 2015? My guess is that by then Janice Jenkins E: [email protected] LED light bulbs will be more than just a novelty, Tel: 724-929-3550 concentrating photovoltaics based on III-V triple Director of Logistics Sharon Cowley [email protected] junction cells will be seeing some hefty deployments +44 (0)1923 690200 and compound semiconductors will be starting to Design & Production Manager play a role in helping to maintain the march of Mitchell Gaynor [email protected] Moore’s Law. +44 (0)1923 690214
Circulation Director Jan Smoothy [email protected] The notion that the compounds could soon replace +44 (0)1923 690200 silicon CMOS is sure to raise a few eyebrows. But Subscriptions Manager it’s not that outrageous an idea. After all, the Debbie Higham [email protected] +44 (0)1923 690220 International Technology Roadmap for Semiconductors is advocating the use of new materials for the 11 nm Chief Operating Officer Stephen Whitehurst [email protected] node that will be rolled out in 2015, and III-Vs are topping the short list. +44 (0)2476 718970
Directors If compounds are to make an impact in four years time, substantial progress has to be made at the Bill Dunlop Uprichard – CEO Stephen Whitehurst – COO research level right now. And that seems to be happening. Jan Smoothy – CFO Haroon Malik, Jackie Cannon, Scott Adams, Sharon Cowley, Sukhi Bhadal Any CMOS successor must be built on silicon – that industry is far too conservative to have it any
Published by other way. So processes will have to be devised that not only overcome the differences in lattice Angel Business Communications Ltd, constant between III-Vs and silicon, but also differences in polarity. And these processes will need Hannay House, 39 Clarendon Road, Watford, Herts WD17 1JA, UK to place two types of transistor on the substrate – probably one made from III-Vs and the other from T: +44 (0)1923 690200 germanium – to realize devices that are either good at transporting electrons or holes. F: +44 (0)1923 690201
Angel Business Communications Ltd Unit 6, Bow Court, Fletchworth Gate, At the International Electron Devices Meeting at the end of 2010 Sematech showed one way to Burnsall Road, Coventry CV5 6SP do this, producing n-type transistors with a very tight spread of characteristics on 200 mm silicon T: +44 (0)2476 718 970 F: +44 (0)2476 718 971 (see Compound Semiconductor, January/February 2011, p12).
Compound Semiconductor is published eight times a year on a controlled circulation basis. One downside of this approach was that a buffer was far too thick. In addition, deposition of the Non-qualifying individuals can subscribe at: £105.00/€158 pa (UK & Europe), £138.00 pa (air mail), $198 pa (USA). III-Vs was over the entire substrate rather than localized areas. Cover price £4.50. All information herein is believed to be correct at time of going to press. The publisher does not accept responsibility for any errors and omissions. The views expressed in this publication are not necessarily those of the Researchers in Europe that include a team from imec have addressed both these issues by forming publisher. Every effort has been made to obtain copyright permission for the material contained in this publication. Angel Business Communications Ltd will be happy to trenches in the silicon substrate and filling them up with a thin layer of germanium, followed by a acknowledge any copyright oversights in a subsequent issue of the publication. thicker one of InP. If the trenches have a concave bottom and the germanium surface is treated to
Angel Business Communications Ltd take on a particularly morphology, it is possible to form high-quality InP material on the orientation of © Copyright 2011. All rights reserved. Contents may not be reproduced in whole or part without the written consent of silicon that is churned through the foundries today (see p.12 of this issue). the publishers. The paper used within this magazine is produced by chain of custody certified manufacturers, guaranteeing sustainable sourcing. In the last few months imec’s engineers have formed transistors from this material. Initial results are US mailing information: Compound Semiconductor (ISSN 1096-598X) is published 8 times a year Jan/Feb, March, not great, with the devices suffering from high leakage currents. But the researchers have plans to April/May, June, July,August/September, October, November/December for a subscription of $198 by tackle this and help to make a good case for III-V logic. By 2015, their efforts could be paying Angel Business Communications Ltd, Hannay House, 39 Clarendon Road, Watford, Herts WD17 1JA, UK. dividends. Periodicals postage paid at Rahway, NJ. POSTMASTER: send address changes to: Compound Semiconductor, c/o Mercury International Ltd, 365 Blair Road, Avenel, NJ 07001 Richard Stevenson PhD Printed by: Pensord Press. Consultant Editor ISSN 1096-598X (Print) ISSN 2042-7328 (Online) © Copyright 2011.
March 2011 www.compoundsemiconductor.net 3 Project2 24/2/11 16:40 Page 30
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CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY contents
Volume 17 Number 2
industry & technology
Preparing silicon for III-V Richard Stevenson reports on research efforts to 12 include III-V materials on silicon manufacturing Conference time The international CS Conference is upon us as 16 leaders gather to discuss the future of the industry MOCVD shake up One company claims to be lowering the required 20 temperature to create epitaxial films by splitting nitrogen gas into a plasma
Charge dissipation Researchers in Glasgow have shown that conductive 25 polymers offer charge dissipation in GaN and ZnO sample processing
Individual awareness A novel electroluminescence approach enables 28 characterisation of individual sub cells in multi junction cells
Triple junction tuning 14 The best performance can be gained from triple 32 junction photovoltaic by optimising the absorption edge of every sub cell
Fault finding facts Nitride lasers are plagued with reliability issues and 36 there remains controversy as to the origin of the faults. Are point defects the main culprit?
Burning beats scrubbing Wet scrubbing is a much used process in LED 40 manufacturing but could combustions based abatement turn out to be a cheaper alternative? 28 38
news
Stable LED colour Picture perfect LED 06 Optimised light 08 Big order for GaN LED MOCVD
Market doubling Company expands offering 06 06 07 Higher solar efficiency 10 with HB-LED mask aligner
08 09
March 2011 www.compoundsemiconductor.net 5 News Final DR.qxp 24/2/11 15:53 Page 6
news review Lumileds Leads LED Lighting to “Freedom From Binning”
PHILIPS LUMILEDS have announced an solutions that improve on what’s possible industry breakthrough that is claimed to with conventional lamps. By combining our relieve luminaire manufacturers’ and lighting unique TFFC and Lumiramic phosphor designers’ concerns over white light technologies with new manufacturing consistency and uniformity. capabilities that allow us to ‘hot’ test and colour bin, Philips Lumileds’ Freedom From With Philips Lumileds vision for Freedom Binning is charting a new course for the From Binning, white LUXEON emitters will LED manufacturing industry to follow and be so uniform and consistent that there will moving us ever closer to the lighting be no colour bin selections. Buyers of the industry.” new LEDs, initially released at CCTs of 2700K and 3000K with others to follow, will The lighting community will want to look at receive LUXEON LEDs that are already LED performance information in a new way tested and binned at real-world operating as a result of these advancements. Although conditions so that their performance for typical datasheets present data for LEDs at point and potentially mislead.” Most colour, light output, and efficacy are already 25°C, it’s well know that the actual datasheets from LED manufacturers include known. Lumileds will proliferate Freedom operating temperature is closer to 85°C the information required to understand From Binning through new product (sometimes higher) and that the performance at elevated temperatures and introductions this year and into the future. performance numbers reported are the industry is able to make real-world essentially overstated. comparisons between products. “At random, I can lay a thousand of these new LUXEONs in a straight line and the LUXEON products that offer Freedom From Philips Lumileds will release its first product consistency and colour quality from LED to Binning are tested at 85°C so that the to feature Freedom From Binning this week LED will be as good or better as what you actual colour point and performance at Strategies in Light. Colour selections will would see with many of the bulbs in use numbers are known. consist simply of a CCT designation, today, said Michael Holt, CEO of Philips “We sacrifice the marketing value of higher centred on the black body curve at hot (real- Lumileds. “The lighting industry has yearned lumen and efficacy numbers for accuracy world) conditions. As new LUXEON for quality of light, simplicity of design, and and confidence,” said Holt. “We can products are introduced for the lighting more efficient light sources in mass calculate performance at lower industry, Philips Lumileds will expand its quantities and reasonable costs that enable temperatures but that would defeat the Freedom From Binning program.
Cree LED Lamp Raises the Bar for Colour Rendering
CREE has announced commercial incandescent BR30, while using only 12 availability of the LBR-30 LED lamp, aimed watts of input power. The lamp is designed at replacing energy-wasting incandescent to last 50,000 hours in open fixtures, which lamps commonly used in tracks, commercial can provide merchants like Eat’n Park and residential recessed downlights. additional savings from reduced relamping Powered by Cree TrueWhite Technology, the and maintenance costs. lamp delivers beautiful, warm-white light with what the firm says, offers unrivalled “The LBR-30 lamp’s superior blend of colour accuracy and efficiency. incandescent-like colour and efficacy delivers a true no-compromise solution for “We were highly impressed with the compared to the incandescents, saves us both general and accent lighting,” said installation of LBR-30 lamps in our every month on ongoing operating expenses David Turner, Cree director of marketing, Pittsburgh, Pa. LEED Gold designed – enabling us to achieve our sustainable LED Lighting. “This high-performance, location,” said Andrew Dunmire, AIA, LEED design objectives.” retrofit lamp quickly installs into track or AP, VP of design and construction at Eat’n recessed fixtures and is available in flood or Park Restaurants, a restaurant chain with 75 Thanks to its high colour rendering index wide flood distributions, giving customers locations throughout Pennsylvania, Eastern (CRI) of 94, the LBR-30 lamp is optimised the flexibility to choose the most appropriate Ohio, and Northern West Virginia. for applications where high colour accuracy solution for their lighting needs.” “The lamps truly brought our space to life by is essential, including restaurants, retail The Cree LBR-30 is sold through Cree LED highlighting the vibrant walls and stores, groceries and museums. It delivers Lighting sales channels and is currently furnishings, while the reduced energy use, 600 lumens, equivalent to a 60 watt shipping in volume.
6 www.compoundsemiconductor.net March 2011 News Final DR.qxp 24/2/11 15:53 Page 7
review news
Worldwide LED Market Sulfurcell achieves Doubled in 2010 12.6% efficiency
THE worldwide high-brightness (HB) LED Lumiled’s success in high-power backlight SULFURCELL, a producer of market leaped from $5.6 billion in 2009 to products, cell phone flash, and architectural CIGS/CIGSe thin-film solar modules has $10.8 billion in 2010, a growth rate of 93%, lighting contributed to much of its success. announced TÜV Rheinland, a provider of according to market research firm Strategies Cree’s dedicated focus on lighting ensured product safety and quality certification, has Unlimited. LCD monitor and TV backlights its continued strong position in the solid- confirmed the 12.6% efficiency of the led the growth spurt, followed by mobile state lighting revolution. Chinese LED company’s full-scale 0.8m2 94W thin-film display applications. Ten companies suppliers captured 2 % of the market. photovoltaic (PV) module. accounted for more than 75% of the HB- LED market. Strategies Unlimited arrived at While LCD backlights accounted for the The high efficiency module thin-film solar these figures after analysing market demand largest part of the jump in HB-LED revenue module modules will begin shipping to as well as the supply-side activity of more in 2010, mobile applications were also customers in Q3 of 2011. Since producing than 40 HB-LED component suppliers. significant contributors. In particular, the and shipping its first modules to large rise in PC notebook sales and the customers in 2005, Sulfurcell has The rank order, by revenue, of the top 10 penetration rate for notebook backlights successfully commercialised on a mass suppliers in the HB-LED market in 2010 is: doubled HB-LED revenue over 2009. scale, ramping-up its production capacity to 35 MW. 1. Nichia Strategies Unlimited expects television and 2. Samsung LED monitor backlights to conitnue to be a Sulfurcell distinguishes itself by developing 3. Osram Opto Semiconductors strong engine for growth in the next two comprehensive solutions for the BIPV, 4. Philips Lumileds Lighting years and flatten out in 2013. The overall solar construction and commercial rooftop 5. Seoul Semiconductor forecast CAGR is more than 16% from sectors. The company is currently setting 6. LG Innotek 2010–2015. LED luminaire design, not up a network of partner installers and 7. Cree performance, was the primary concern for integrators in North America. 8. Sharp the lighting market in 2010. 9. TG “We are delighted Sulfurcell has achieved 10.Everlight HB-LED component revenue for lighting such momentum over the last year, with was $890 million in 2010. Solid-state major supply agreements, financing, and Several paths led to this impressive growth. lighting will become the key market driver in now validation of our 12.6% efficiency Samsung LED, Seoul Semiconductor, and 2014 because of the worldwide focus on CIGS modules,” said Nikolaus Meyer, LG Innotek rode the boom in the LCD TV energy efficiency and the phase-out of CEO of Sulfurcell. “With our high- and monitor backlight market. Osram rode incandescent bulbs. The forecast CAGR for efficiency modules hitting the market in a the rise of the Chinese HB-LED market, HB-LED components for lighting from matter of months, we imagine 2011 will be especially in the automobile sector. 2010–2015 is 39%. another year of success for Sulfurcell.”
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March 2011 www.compoundsemiconductor.net 7 News Final DR.qxp 24/2/11 15:53 Page 8
news review Osram Multi ChipLEDs Produce Picture-Perfect Images
OSRAM says displays using its LEDs produced using Thinfilm or ThinGaN technology raise image quality to new levels. Due to their small footprint, they remain undetected by observers through the black LED housing.
An LED developed by Osram Opto Semiconductors ensures brilliant colours and sharp contrasts. Osram says its Multi ChipLEDs used in the new FormoLight display are the smallest RGB LED on the market. The compact size permits a special image format. In this display for interior use, the LEDs are not used as backlighting The FormoLight display thus impresses with hidden from observers as in LCD rich colours, sharp contours and depth of appliances, but are visible on the surface. field, showing high-quality images rich in contrast. Convincing from every angle, Multi “Information has to be presented clearly in ChipLEDs produce a homogenous image every respect. This concerns not only the from every perspective. This homogeneity is concept of visualisation, but also the based on two principles. technical reproduction. Excellent image quality is needed, which is easier to realise On the one hand, LEDs can be packed very thanks to the advantages of LEDs, such as closely because of their compact size; their directional characteristics and light distance between pixels can be as little as quality”, explains Sven Weber of Osram 2mm. On the other, the special casting Opto. material ensures a perfect colour mix.
Ubilux selects Aixtron for GaN LEDs
Aixtron SE has a new MOCVD reactor “Ubilux already has several CRIUS systems order from existing customer Ubilux of for GaN applications as well as a G3 The Standard of Excellence in Safety, Tainan County, Taiwan. The order is for two system for GaAsInP application. We are Quality and Performance. Aixtron CRIUS II deposition systems in the impressed with these systems’ performance 55x2-inch configuration which will be used and we trust Aixtron technology. Over the When it comes to gas source to expand the company’s production years, we have built up an excellent and distribution equipment, capacity for GaN-based HB LEDs. relationship with the company so we were ® interested in acquiring the newest systems SEMI-GAS is really all you Ubilux placed the order in the fourth quarter for our further expansion plans. I expect need to know. We have one of 2010 and the systems will be delivered in these will be a perfect match to our of the world’s largest installed the first quarter of 2011. A local Aixtron requirements,” he continues. bases…and our customers support team will commission the new reactors at the state of the art clean-room Christian Geng, General Manager Aixtron keep coming back to us. facilities housed in the Ubilux headquarters Taiwan adds, “A feature of the Taiwan Details await you at: in the Southern Taiwan Science Park. MOCVD community is the high number of www.SEMI-GAS.com the most advanced technology Aixtron President Henry Chen from Ubilux systems that are being used for the mass comments, “This is our first CRIUS II production of UHB-LEDs. Our support and system purchase order. After Aixtron field service is available 24 hours a day to 180 Quaker Lane, Malvern, PA 19355 launched its new MOCVD systems, Ubilux guarantee customers receive the support T: 610-647-8744 F: 610-640-4548 was very glad to acquire them. Once we they need by phone or on-site. In fact last email: [email protected] had finalised our expansion plans, we year, the Aixtron Taiwanese support team approached Aixtron´s local representatives handled over 1,800 installations, upgrades, www.SEMI-GAS.com who sorted out the deal with us.” and customer support requests.”
8 www.compoundsemiconductor.net March 2011 News Final DR.qxp 24/2/11 15:53 Page 9
review news ISCAS Orders Two Aixtron MOCVD Tools for GaN Device Growth
AIXTRON SE has a new order for MOCVD help us to achieve a very high standard of reactors from existing customer, the Institute results for R&D in these key technology of Semiconductors Chinese Academy of areas. We have been impressed in initial Sciences (ISCAS). trials how effectively and easy it has been to scale up device processes from our existing The order comprises one AIX 200/4 in the deposition systems to the new Aixtron 3x2-inch wafer configuration and one AIX systems.” 2600G3 IC in the 8x3-inch wafer configuration. “Our relationship with Aixtron began way back in 2003 when ISCAS expanded its The Beijing, PR China based institute R&D capabilities installing a state-of-the-art placed the order during the third quarter of Close Coupled Showerhead (CCS) 2010 and following delivery in the second MOCVD reactor. That 3x2-inch reactor quarter of 2011, the systems will be used for enabled us to grow high quality GaN on production of electronic devices and red sapphire layers on 4-inch wafers as well as LEDs. The local Aixtron support team will GaN on Silicon primarily for the research stations. Currently, it runs three commission the new reactors in a dedicated development of short-wavelength laser postdoctoral stations, four doctoral and five facility. diodes and UV photo-detector based master programs. devices.” A spokesperson commented, “This is a It has made great and significant repeat order for us and over half a decade The Institute of Semiconductors was among contributions to developing Chinese we have formed a good long-term the first institutions/universities in China, semiconductor science and technology and relationship with the Aixtron group. We are authorised to offer master and doctoral is expected to make many more splendid convinced that these Aixtron systems will degrees and to introduce postdoctoral achievements in the future.
“Now offering Germanium Reclaim”
March 2011 www.compoundsemiconductor.net 9 News Final DR.qxp 24/2/11 15:53 Page 10
news review
EV GROUP has revealed the latest addition devices. As a result, the EVG620HBL EV Expands to its portfolio of products created to delivers throughput of up to 165 six-inch optimise the manufacture of high-brightness wafers per hour (up to 220 wafers per hour light-emitting diodes (HB-LEDs), compound in first print mode) with high alignment Portfolio with Mask semiconductors and power electronics. The accuracy and yield. new EVG620HBL fully automated mask Aligner for HB-LED alignment system builds on EVG’s mask According to market research firm Global aligner platform, adding a high-intensity Information, global consumption of high ultraviolet (UV) light source and five brightness LEDs (HB-LEDs) will continue to Production cassette stations. The firm says this is grow at a rapid pace over the next decade, significantly more than competitive offerings from $10.09 billion in 2010 to $46.05 billion and will enable continuous fabrication of in 2020. Key drivers will include explosive growth in solid-state and general lighting applications, as well as signage, professional displays, and stationary (non- vehicle) signals. To meet this increased demand, HB-LED manufacturers must quickly ramp up to higher production capacity, as well as optimise their manufacturing processes to ensure the highest yields.
This elevates the need for automated manufacturing solutions with the lowest cost of ownership. As with its dedicated EVG560HBL automated wafer-bonding system, introduced last July, EVG developed the EVG620HBL aligner to address these needs. EVG is not new to this market; its bonders and mask aligners are being deployed by four of the top five major HB- LED manufacturers. Building on this success, the company created the 620HBL in response to customer demand for a mask VERSATILE MBE alignment system dedicated to meeting these devices’ yield and throughput SOLUTIONS requirements. Another key feature of the EVG620HBL is the availability of special COMPACT 21 SYSTEM recipe-controlled microscopes whose illumination spectrum is optimized to ensure the best pattern contrast with various wafer and layer materials, including such Very high performance advanced substrate materials as sapphire, Twelve source ports SiC, AlN, metal and ceramic. Modular and expandable “Our ongoing R&D efforts and focus on Suitable for III-V's, II-VI's, MCT, oxides, innovation in equipment manufacturing and spintronics, etc. process engineering are enabling EVG to consistently deliver the state-of-the-art, high- Small footprint volume manufacturing solutions that our Low cost of operation customers expect,” stated Paul Lindner, EV Group’s executive technology director.
“Just last month, a HB-LED manufacturers To find out more, please contact us today at: ordered an EVG560HBL bonder, and the EVG620HBL is the latest result of our e-mail: [email protected] ongoing efforts around enabling HB-LED www.riber.com manufacturers to develop more efficient, RIBER - 31, rue Casimir Périer - 95873 Bezons cedex - France cost-effective and higher yielding devices.” Tel: +33 (0) 1 39 96 65 00 / Fax: +33 (0) 1 39 47 45 62 We look forward to making further inroads with this latest offering, which also features 10 www.compoundsemiconductor.net March 2011 p11 CS Systems Lakeshore Raboutet 24/2/11 13:07 Page 11 ® CS CLEAN SYSTEMS® Safe Abatement of MOCVD Gases Waste gas treatment for MOCVD research and manufacturing Safe, dry chemical conversion of toxic gases to stable solids Proprietary CLEANSORB media specially developed for high MOCVD gas flows Backup column for 100% uptime Integrated capacity endpoint sensor Local refill service worldwide No handling of toxic waste Newly-developed chemisorber for GeH4 applications For more information please contact CS CLEAN SYSTEMS AG under: Phone: +49 (89) 96 24 00-0 Email: [email protected] www.cscleansystems.com RABOUTET S.A. Manufacturer of Molybdenum. Components for MBE. Specialized Cleaning & Degassing available. RABOUTET S.A. 250 Av Louis Armand Z.I Des Grand Prés F-74300 Cluses France Tél : 33 (0)4 50 98 15 18 Fax : 33 (0)4 50 98 92 57 E-mail : [email protected] http://www.raboutet.fr IMEC Final.qxp 25/2/11 09:49 Page 12 technology epitaxy IMEC prepares the ground for III-V transistors on silicon One option for maintaining the march of Moore’s Law is to build the pairing of III-V and germanium transistors on silicon. Depositing compound semiconductors on silicon in a selective manner is tricky, but researchers at imec have shown that it is possible to do this on 200 mm on-axis wafers by forming concave trenches in the material, before filling them with a little germanium and topping them up with InP. Richard Stevenson reports. t is getting harder and harder to squeeze more tremendous obstacles must be overcome. The first is to performance from silicon CMOS transistors. Back in find a pair of materials – one for the channel and another Ithe twentieth century improvements were possible by for gate – that can form a high-quality interface and prevent simply slashing the size of the silicon device and its high leakage currents. The other challenge is to develop silicon dioxide gate. But more recently gains have hinged processes that can form III-V layers in a well-defined on the introduction of exotic materials such as HfO2, region on silicon substrates, so that this composite wafer which prevents an unacceptable hike in leakage currents, could be processed in silicon foundries to yield transistors and the insertion of a SiGe layer to speed the passage of using conventional process flows and conventional toolsets. electrons from source to drain. One institution that has a rich history of developing a Even more radical changes to the transistor architecture successor to silicon CMOS and has recently been are on the horizon. According to the International addressing both of these challenges is imec of Leuven, Technology Roadmap for Semiconductors, transistor Belgium. Since 2007 it has been involved in ‘Dual Logic’, a manufacture at the 11nm node, which is scheduled for project with a total budget of € 9.1 million. The primary aim 2015, will require the introduction of a new set of of the programme is to develop transistors for logic ICs on materials to replace silicon. III-Vs are high on the short list. silicon substrates that are suitable for the 22 nm node and If compound semiconductors are to make an impact, two below, and feature a germanium channel for p-type transistors 12 www.compoundsemiconductor.net March 2011 IMEC Final.qxp 25/2/11 09:49 Page 13 epitaxy technology and a III-V channel for n-type equivalents – both forms of device are needed to replicate silicon CMOS processors. imec has played a leading role in this project. One of its major achievements, aside from its work on germanium pMOSFETs, has been the development of processes that can form high-quality InP on selected regions of silicon substrates with the on-axis orientation used in today’s CMOS foundries. This accomplishment has required the development of techniques that form trenches with a well- defined concave base and growth processes that can fill them up with high-quality InP. The team of imec researchers began by developing InP- on-silicon processes on 6° off-cut, 200 mm silicon substrates in a 300 mm-compatible Crius MOCVD epi- reactor, built by Aixtron to be compatible with state-of-the- art silicon foundry specifications (see Figure 1 for an engineers replicated this landscape in the concave Figure 1 (a) overview of the process). Subsequently, it has transferred trenches in on-axis silicon. Substantially reducing the imec’s process this technology to exactly orientated silicon (001), density of anti-phase boundaries is not the only benefit of flow for InP and because it views this format as the only one acceptable to inserting a thin layer of germanium between silicon and InGaAs that industry. “The silicon CMOS industry is about the InP. Germanium also acts a bridge between the two channel growth most conservative industry you can think of,” explains materials because its lattice constant is almost half way in silicon Matty Caymax, head of the imec team. He points out that between that of silicon and InP. In addition, the wafers with switching to this more common format delivered additional germanium layer reduces the ‘thermal budget’ (the shallow trench benefits. Growth processes on off-cut wafers led to combination of high-temperatures and the length of isolation (b)The issues of crystal quality and surface morphology that heating time) for the pre-epi bake. A lower thermal budget processes and depended on trench orientation, which were avoided is desirable, because it cuts unwanted dopant diffusion. temperatures when using on-axis silicon. used for InP Digging out the trenches growth Side-stepping anti-phase domains The trenches that imec’s engineers make in the silicon Hetero-epitaxy of III-Vs on any orientation of silicon is substrates can have widths ranging from 20 nm to 100 μm, challenging. Accommodating lattice-mismatch between lengths that are an order of magnitude larger, and depths the two materials is one issue. However, this is of a few hundred nanometers. They are created in wafers overshadowed by problems that stem from depositing a with the standard isolation structures known as shallow polar material on a non-polar one. Unless the surface of trench isolation, which are routinely used in the CMOS silicon is carefully prepared, anti-phase domains form that chip manufacturing industry. This isolation structure plague the epitaxial layer. consists of a patterned SiO2 capping layer that can laterally isolate devices. This approach allows a “The main issue with anti-phase domain boundaries is the straightforward and elegant integration of compound fact that they lead to bonds like gallium-gallium and semiconductor materials in a standard manufacturing arsenic-arsenic bonds, which are rather metallic in nature” process flow as used in silicon foundries. explains Caymax. “This gives you problems if you want to use these materials for electrical applications – the At imec, engineers apply a standard wet clean to the devices would simply short-circuit.” wafers, dip them in hydrofluoric acid to remove native oxide and insert them into an ASM-Epsilon 2000 reactor Caymax and his co-workers initially addressed this where they are baked in hydrogen gas at 850 °C. In this problem by inserting a thin germanium layer in the chamber trenches are dug out in between the SiO2 trenches of 6° off-cut silicon. This germanium layer, which structures by etching these silicon areas in hydrogen is sandwiched between silicon and InP, was treated so chloride vapour at 850°C and a pressure of 10 Torr. that all the atomic steps were two atoms high. Later, Before the wafers are removed, a 30-75 nm-thick layer of germanium is added at atmospheric pressure and a typical growth temperature of 450 °C. Left: Intel continues to push the capability of silicon CMOS. It has just released second-generation Intel To optimise the temperature for growing the InP seed Core i7, i5 and i3 desktop processors that are layer, imec’s engineers compared the quality of material manufactured with a 32 nm process technology grown at 390 °C, 420 °C and 450 °C on 6° off-cut featuring second-generation high-k metal gate wafers (see Figure 2). At the lowest temperature the transistors. How much more can be squeezed from growth proceeds by what is known as the vapour-liquid- silicon CMOS is unclear, but Intel, like imec, is looking solid regime. According to the researchers at imec, it is at III-Vs to extend the march of Moore’s Law. likely that tertiarybutylphosphine (TBP) does not Credit: Intel decompose at 390 °C, but trimethylindium does and it March 2011 www.compoundsemiconductor.net 13 IMEC Final.qxp 25/2/11 09:49 Page 14 technology epitaxy the trenches along the [110] direction it is possible to trap threading dislocations by employing an aspect ratio of more than two – if it is less than that, stacking faults and threading dislocations are seen in InP at the top of the trench. In contrast, in [110] windows in the surface, even if the aspect ratio is greater than two, stacking faults that originate at the side walls permeate through all the InP material. Figure 2. There is a fairly narrow temperature window for growth of InP. On the level (a) at 390°C it seems that only trimethylindium decomposes, forming It is possible to banish these issues related to the trench metallic indium on the germanium surface. Catalytic decomposition of direction by turning to on-axis substrates. Modifying the TBP then occurs on the indium droplet to create whiskers. (c) at 450°C trench geometry and employing similar growth processes large islands form of the surface, probably due to a high indium mobility. can realise this - the only major difference to the process (b) at 420°C both these issues are avoided, and a relatively smooth seed for the of-axis silicon is dropping the insertion of the GaAs layer of InP can be deposited layer. The key to success on this cut of silicon is to over- etch this material during the hydrogen chloride vapour phase etch to create a concave trench. When germanium is deposited, it initially follows the underlying surface. However, when two adjacent facets interact due to the different material growth rates on different planes, the surface of the germanium film becomes smoother and its curve is not as pronounced as that at the silicon-germanium interface. imec’s engineers realize a relatively uniform step density on this germanium buffer by baking the wafer at 700 °C. At this elevated temperature the step formation energy approaches zero and the top of the germanium film becomes rounded and continuous. In addition, many single atomic steps on the Figure 3 Switching from tertiarybutylphosphine to tertiarybutylarsine curved germanium surface are converted into a smaller improves the quality of the InP layer number of double steps. Applying this approach to the growth of InP in a 200 nm wide trench has produced encouraging results. Cross-sectional transmission forms metallic indium on the germanium surface. Catalytic electron microscopy images reveal the absence of anti- decomposition of TBP then occurs on the indium droplet to phase domains in InP, which forms a flat, uniform layer create whiskers. At 450 °C, large islands form on the along the complete length of the trench (see Figure 4). surface, probably resulting from an indium mobility that is The dislocation density in the InP layer is far lower near too high. But at 420 °C both these issues are avoided, and the surface, thanks to the ‘extended defect necking effect’. it is possible to grow a relatively smooth seed layer of InP. Off the level Further improvements in the smoothness of this seed layer When imec’s engineers set out to develop a selective on off-cut silicon are possible by switching the gas used area growth process for InP-on-silicon, they hoped to for the pre-epi bake from the pairing of hydrogen and TBP devise a technology that could fill the trenches precisely to hydrogen and tertiarybutylarsine (TBAs) (see Figure 3). to the top of the oxide surface. This benefit, which has been observed before by several other groups, indicates that the quality of III-V growth is “We found that this is really challenging,” admits Caymax. high when arsenic atoms provide a full-monolayer coverage “We have loading effects: The growth rate and composition of the germanium surface. changes, influenced by the geometry. When you have smaller windows the growth rate goes up, when you have After the seed is deposited, the researchers ramp the larger windows the growth rate goes down, and the best temperature of the off-cut substrates to 610 °C over a approach is to make sure that all the indium phosphide five-minute interval that does not involve any growth of areas grow outside your oxide.” InP. This bake that takes place under a constant TBP pressure may anneal out some of the point defects and To process such a wafer into devices, everything that sits provide additional smoothening of the surface, thanks to outside the trenches must be ground away. One way to indium migration. Engineers then deposit an InP bulk layer, do this is chemical mechanical polishing, a technique that using a higher growth rate than the seed. The quality of can ensure a smooth surface across the entire wafer. “The this material is improved by inserting a GaAs layer just good thing is that chemical-mechanical polishing has 5 nm thick after the 420 °C bake in TBAs. The imec team become an accepted step in silicon processing,” says have studied the quality of the InP in these trenches. In Caymax. After the CMP step, the wafers are loaded again 14 www.compoundsemiconductor.net March 2011 IMEC Final.qxp 25/2/11 09:49 Page 15 epitaxy technology into the MOCVD tool to top off the InP layer with the desired multiple layer stack that will form the channel of a quantum-well MOSFET. He and his team have processed some wafers with this approach, and last October they started to make their first devices. The good news is that these devices have showed transistor characteristics, but the downside is that they suffer from very high leakage currents. “We are working right now with solutions to cope with this leakage problem, one of which is the use of semi-insulating InP, which will hopefully block this leakage current,” says Caymax. In terms of devices, it is clearly early days for the imec team. But the lack of transistor success to date should not overshadow the important contribution that this European institute has made to building III-V transistors on silicon: developing a novel technology to deposit high-quality InP, selectively, onto on-axis silicon wafers. Figure 4. Transmission electron microscopy images of InP grown in © 2011 Angel Business Communications. trenches 10 nm (a) and 200 nm (b) wide reveal how threading Permission required. dislocations are confined in the bottom of the trenches Further reading G. Wang et al. J. Electrochem. Soc. 157 H1023 (2010) G. Wang et al. Appl. Phys. Lett. 97 121913 (2010) 3URIHVVLRQDO7RROVIRU0RWLRQ ZZZOHVNHUFRP March 2011 www.compoundsemiconductor.net 15 Conference Bios v1.qxp 24/2/11 15:07 Page 16 CS Europe 2011 www.cseurope.net Book your delegate place NOW. Limited availability www.cseurope.net 22nd March 2011 Frankfurt, Germany What next for the Compound Semiconductor Industry? CS Europe conference takes place on the 22nd March in the heart of Europe. Pioneering companies from around the globe will give their take on the best opportunities for compound semiconductors, and what has to be done to seize these opportunities. If you want to learn from the insight of these insiders, be sure to book your place at CS Europe. Your challenge is met by someone else’s solution and CS Europe aims to provide the platform that allows the CS community to not just share ideas but develop solutions in manufacturing and furthering the reach of Compound Semiconductor devices. Klaus H. Ploog Dr. Petteri Uusimaa Pioneer of Molecular Beam Epitaxy (MBE) Keynote President, Modulight Speaker Sponsors Topic: How to make a state-of-the-art visible red laser, Topic: What next for the Compound Semiconductor what its specs are, and what new markets it can Platinum Industry? target Klaus H. Ploog is one of the pioneers of molecular beam Prior to joining Modulight Dr Petteri held numerous epitaxy (MBE), a versatile tool to fabricate semiconductor manager positions in international research projects in and metal nanostructures. The MBE technique has been which he managed relations to international funding established in the early1970s, i.e. long before the hype on companies as well as was the principal scientist in the “Nano“ started to dominate the word wide research programs. Since 1997 Petteri has been managing funding policies in the late 1990s. semiconductor sales to multinational companies and acted as a President & CEO of Modulight since Using molecular beam epitaxy, he has designed and incorporating the company in 2000. Dr. Petteri Uusimaa fabricated numerous new semiconductor and magnetic has a PhD in semiconductor physics from Tampere nanostructures that showed unique quantum size effects. University of Technology (TUT). These man-made nanostructures have led to a number of novel device concepts, including high-electronmobility Jan-Gustav Werthen, Ph.D. Sponsors transistors (HEMTs), quantum well and quantum dot Senior Director, Photovoltaics Gold lasers, quantum cascade lasers, etc. JDSU His research achievements have been published in Topic: The urgency for the world to make power grids more than 1500 papers in international refereed journals, digital (smart grids) and photovoltaic developments and he has received several prestigious awards. His for electricity production from solar. current interest for the subject of sustainable energy concepts has emerged from his research on Group-III Jan-Gustav Werthen brings more than 26 years of Nitrides for solid-state lighting beginning in 1995, where technology experience to JDSU. As senior director of he has paved the way for more efficient blue, green and Photovoltaics, Jan drives overall business and product violet GaN-based LEDs by using non-polar epitaxial layers development that includes power-over-fiber products and and heterostructures. solar CPV cells. Jan joined JDSU in 2005 as part of the 16 www.compoundsemiconductor.net March 2011 Conference Bios v1.qxp 24/2/11 15:07 Page 17 www.cseurope.net 2011 CS Europe Klaus H. Ploog acquisition of company that he founded called Photonic management within the GaAs field for more than 20 Power Systems, Inc. From 1992 – 2005, Jan was CEO of years. Dr. Berger received his PhD degree in physics from Photonic Power Systems, where he built a semiconductor the University of Muenster, Germany. device and subsystems organization from the ground up and grew sales over $1 million annually, addressing worldwide markets. Marc Rocchi CEO, OMMIC Prior to running his own company, Jan held management positions at companies such as VS Corporation, an early Topic: What’s needed from GaAs and GaN for player in the fiber-to-the-home market, Varian Associates, tomorrow’s wireless and Xerox. Jan received his Ph.D. and M.S. in Materials Dr Petteri Science and Engineering from Stanford University. Marc Rocchi received his degree in Electrical Engineering Uusimaa and Solid State Physics from the Ecole Supérieure d’Electricité de Paris in 1972 . In 1976 , he joined the Jeff Shealy Philips Research Lab in France to work on the design of Division Vice President high -speed digital GaAs circuits and in 1983 , he became RFMD head of the GaAs RFIC department. In 1988 , he moved to Philips semiconductors in Eindhoven to lead the CMOS Topic: Role of GaN RF Power Technology for process and characterization group as part of the 1Mbit Tomorrow’s Commercial and Defense Wireless SRAM project. Since 1990 he has successively been Applications general manager of Philips Microwave Limeil and CEO of OMMIC . He is now Chairman of the board of directors of Jan-Gustav Jeff Shealy is vice president of the Infrastructure Product OMMIC Werthen, Ph.D Line at RFMD, where he is responsible for strategic planning and execution of the corporate infrastructure strategy. Dr. Shealy was a principle founder of RF Nitro Alexander Bachmann Communications, Inc., where he served as president and Marketing Engineer CEO until RFMD acquired the company in October 2001. OSRAM Opto Semiconductors GmbH Dr. Shealy is a Howard Hughes Doctoral Fellow and has held positions at Hughes Research Labs and Hughes Topic: Recent Progress on Green InGaN Laser Diode Network Systems. He received his MBA from the Development at OSRAM Opto Semiconductors Babcock School of Business at Wake Forest University and he holds a Ph.D. in electrical engineering from the After the studies in physics, Alexander Bachmann worked Jeff Shealy University of California at Santa Barbara. Dr. Shealy is a on the development of electrically pumped vertical-cavity member of the IEEE Electron Device Society. surface-emitting laser diodes at the Walter Schottky Institut of the Technical University of Munich. Emitting in the near- to mid-infrared spectral region, these devices Dr Otto Berger are perfect light sources for trace gas sensing Corporate Advanced Technology Director applications. In 2010 he joined OSRAM Opto TriQuint Semiconductor, Inc Semiconductors for the marketing of visible lasers for pico projectors. With first products already being available on Topic: 3G/4G requirements for wireless systems and the market, a huge market growth is expected for the next the role GaAs and GaN devices will play in meeting years, driving the development of blue and particularly Dr Otto these requirements green laser diodes. Berger Dr. Otto Berger is TriQuint’s Corporate Advanced Technology Director, overseeing the company’s portfolio Dr. Michael Fiebig of acoustic technologies, 150mm GaAs process Director Marketing and Business Development Solid developments and advanced packaging techniques at State Lighting TriQuint Munich, Germany. He leads innovation OSRAM Opto Semiconductors GmbH developments in these fields to evolve TriQuint technology for future product generations. Dr. Berger began his Topic: What are the success factors for the professional career at Siemens Semiconductor and deployment of Solid State Lighting? moved to TriQuint in 2002 through the acquisition of Infineon’s GaAs business. He has worked in various roles Dr. Michael Fiebig gained his PhD in Physics at the Marc Rocchi in process development, product engineering and fab University of Hanover in 1998. During his doctoral thesis March 2011 www.compoundsemiconductor.net 17 Conference Bios v1.qxp 25/2/11 12:03 Page 18 CS Europe 2011 www.cseurope.net Alexander Bachmann he worked on Diode-pumped solid-state-lasers in the Information Eng from Queens University Belfast and has spectral region at 2μm for medical applications. In 1998 been working in the semiconductor industry for more than he joined Lambda Physics as Product Manager for 20 years. First at Analog Devices, followed by Philips & is Excimer Lasers for display and industrial applications. currently at NXP where he is the Marketing Director for From 2001 he joined OOSRAM Opto Semicondutors and the Product Line “RF Power & Base Stations". was heading the Marketing segment for Consumer and Communication until 2008. Since 2008 he is leading the Dr. Philippe Roussel Marketing and Business Development in the business Project manager Power Electronics and Compound segment Solid State Lighting at OSRAM Opto Semiconductors Dr. Michael Semiconductors. Yole Développement Fiebig Topic: GaN power electronics: Market forecasts and Dr. Markus Behet industry status Europe Business Development Manager Dow Corning Compound Semiconductor Yole Développement (www.yole.fr) is a market research and strategy consulting company based in Lyon, France. Topic: SiC Advances for Power Electronic Applications Dr Philippe Roussel has headed the Compound Dr. Markus Behet received his PhD in Electrical Semiconductors division since 1998. Yole produces Engineering and Semiconductor Physics from the numerous market reports and is currently publishing their Technical University Aachen in 1995. From 1995 - 1998 analysis of the SiC, GaN, AlN, Sapphire power and RF Dr Markus he was R&D Manager for epitaxial growth and device device as well as high-brightness LED markets Behet processing of advanced III/V Semiconductors for High Dr. Philippe ROUSSEL is graduated from the University Frequency and Infrared Laser applications at IMEC in of LYON in Electronics and Microelectronics. He was Leuven/Belgium. In 1999 – 2002 he joined Siemens granted a Ph-D in Integrated Electronics Systems from Semiconductor and later Infineon Technologies where he the Applied Sciences National Institute (INSA) in LYON. was responsible for Business Development and Marketing of GaAs mmW products and foundry projects. He is working at YOLE DEVELOPPEMENT since 1998 and is leading the techno-economical market analysis in From 2002 - 2010 he held several Marketing and Sales the fields of Compound Semiconductors and Power positions for GaAs handset, foundry and mmW markets at Electronics at materials, equipment and devices level. TriQuint Semiconductor. In 2010 he joined Dow Corning Dr. Ulf Meiners as Development Manager for SiC based Compound Semiconductor Solutions. Scott Parker Executive Vice President Sales and Marcom Oclaro, Inc Dr. Ulf Meiners Chief Technical Officer, UMS Topic: Future Proofing Networks with 100 Gigabit Optics Mark Murphy Director Marketing, RF Power & Base, NXP Mr. Parker was previously with Avanex Corporation, most Topic: High performance compound semiconductors recently serving as the Company’s Senior Vice President Mark Murphy for infrastructure, automotive and defense of Sales. Prior to joining Avanex, Mr. Parker held senior applications management positions at two start-up companies funded by Sequoia Capital. Ulf Meiners received the Ph.D. in physics from the Technische Universität Munich, Germany and has been Previously, Mr. Parker served as Senior Vice President of working in the compound semiconductor domain since Sales and Marketing for JDS Uniphase where he more than 20 years. integrated the sales and customer service teams from numerous acquisitions. He also held sales and general He is the Chief Technical Officer of the UMS group and manager positions at VLSI, National Semiconductor and the Technical Managing Director of UMS GmbH, Intel. Mr. Parker earned an M.B.A and bachelor’s degree Dr. Phillipe Germany. Mark Murphy received a BEng in Electrical and in marketing from the University of Utah. Roussel 18 www.compoundsemiconductor.net March 2011 Conference Bios v1.qxp 24/2/11 15:07 Page 19 www.cseurope.net 2011 CS Europe Scott Parker Dr. Ertugrul Sönmez Dr Mike Cooke Business Development Chief Technology Officer MicroGaN GmbH Oxford Instruments Plasma Technology Topic: Efficient High-Voltage GaN Devices and ICs for Topic: Batch and single wafer processing strategies Next Generation Power Management Solutions for HBLEDs Ertugrul received his Diplom-Ingenieur degrees in Dr Mike Cooke joined Oxford Instruments Plasma electrical engineering from University of Ulm, in 1998. In Technology in 1992. As Chief Technology Officer, he leads 1998, he joined the department of Electron Devices and the team of expert development technologists responsible Dr. Ertugrul Circuits as a member of the scientific staff, earning the for developments such as PEALD and scaling plasma Sönmez Doktor-Ingenieur degree in 2007. His main fields of tools towards 450mm. research were compact silicon bipolar transistor modeling and analog RF MMIC design at 24GHz. He has authored and co-authored more than 40 publications and Dr. Thomas Uhrmann conference contributions. In March 2005, he joint ATMEL Business Development Manager Germany GmbH in Heilbronn as Marketing Manager, to EV Group (EVG) be responsible for the world wide UWB RFID product line. In June 2005, he joined TES Electronic Solutions Topic: Engineered Substrates for future compound GmbH in Stuttgart, a service provider of ATMEL Germany semiconductor devices GmbH. His main activities were to lead the ultra wide Roy Blunt band MMIC design. Thomas Uhrmann is Business Development Manager for Compound Semiconductors and Si-based Power Devices In December 2006, he has been called by MicroGaN at EV Group (EVG). In his current role, he is responsible GmbH as the strategic Business Developer to bring in his to introduce and manage technological innovations for the experience in semiconductors and markets. fabrication of high-brightness light emitting diodes (HB- LEDs) at EVG. Roy Blunt Uhrmann holds an engineering degree in mechatronics SEMI International Compound Standards from the University of Applied Sciences in Regensburg and a PhD in microelectronics from Vienna University of Topic: Standardisation in compound Technology. Dr. Mike Cooke semiconductors - an essential step for furthering the efficiency & profitability of the industry. Uhrmann authored and co-authored several papers on semiconductor diode structures, micro or nanomagnetism Roy Blunt graduated from Imperial College London and related areas. in 1969 and joined Plessey Research Caswell Ltd., where he worked on a variety of R&D projects before becoming part of the GaAs IC pilot production team and developing Mike Czerniak a particular interest in compound semiconductor Product Marketing Manager, Exhaust Gas Management characterisation techniques (metrology). Edwards Dr. Thomas In 1988 he left Plessey to become part of the founding Topic: GaN - meeting emissions regulations Uhrmann team of Epitaxial Products International Ltd in Cardiff - now IQE (Europe) Ltd. Mike Czerniak received his PhD at Manchester University, and started as a scientist at Philips’ UK laboratories He has been involved in standards work since the early before moving to its fab in Nijmegen, working on 1980s and was a co-founder and, for many years, co- compound semiconductor applications. chairman of the SEMI European Compound Semiconductor Technical Committee which has been very He was in marketing at Cambridge Instruments and VG active in standards development both on its own and in Semicon; he is now the product marketing manager of co-ordination with the North American and Japanese the Exhaust Gas Management Division of Edwards, SEMI Compound Semiconductor committees. Clevedon, North Somerset BS21 6TH, UK Mike Czerniak March 2011 www.compoundsemiconductor.net 19 Nanomaster Final.qxp 24/2/11 15:31 Page 20 interview Nanomaster Nanomaster offers a different take on MOCVD Process engineers put down nitride films by cranking MOCVD reactors up to 1100°C and cracking ammonia and metal precursor molecules on the substrate. But this type of growth can be performed at far lower temperatures to create epitaxial films with minimal hydrogen by switching to a table-top Nanomaster tool that employs an RF source to split nitrogen gas into a plasma. Richard Stevenson talks to Nanomaster’s CEO, Birol Kuyel, about the pros and cons of this alternative growth technology. 20 www.compoundsemiconductor.net March 2011 Nanomaster Final.qxp 24/2/11 15:31 Page 21 Nanomaster interview Q What kick-started your development of a plasma- A Yes, it has big impact on running costs. Dealing with assisted MOCVD tool? ammonia requires process abatement. In the case of nitrogen, you don’t have that. A I met Hae-Won Seo, a professor in the department of physics and astronomy at the University of Arkansas at Q Are you the only manufacturer of a plasma-enhanced Little Rock. She was just getting a new appointment, had MOCVD tool? limited funds, and wanted to replicate the clumsy, big MOCVD systems that she had seen or worked with in A Yes. I think there is some work in Japan and Australia, Taiwan. but I don’t know the nature of this work. I’d like to know more, but I have not run into any detailed information. For the money she had, she couldn’t buy or do anything with those systems. So I proposed that we could do Q What were the big challenges in making your first something table-top. The temperature will not be as high, tabletop MOCVD tool? but at these lower temperatures she could still do MOCVD because we could provide her with plasma A The most difficult part was designing everything to enhancement. With her funding we designed and built the work together - putting everything into one system was system, delivering it in September 2008. very, very complicated. Our customer wanted features and upgrades, so we made the tool flexible for that – making it Q Your interest in plasma-assisted growth of nitride films possible to inject liquids directly into the chamber. That goes back a long way, doesn’t it? adds to the complexity of the small volume inside the plasma source. Vacuum technology, plasma technology A Yes, I have 30 year-old patents for silicon nitride and delivering liquid precursors - we had done that before deposition from AT&T Bell Labs. At that time it was with a number of different systems. The small volume was difficult to get the stochiometry and other properties of a big challenge. In this small volume interactions between silicon nitride uniform throughout the film simultaneously. heater plate and plasma can take place. However, the But we found that by activating nitrogen in a separate heater plate can be powered from outside, making it chamber, you could control the stochiometry independent possible to maintain the plasma in isolation. of the composition and other physical parameters, like thickness, density and so on. Those experiments were Q Could your describe the gas flows in your reactor? done with nitrogen rather than ammonia. Nanomaster’s A We designed our own showerhead plasma source. plasma- So I had a similar expectation from gallium nitride - that Some of the gases go through the showerhead and some enhanced plasma enhancement could help incorporate nitrogen at of them through a gas ring put in the downstream of the MOCVD tool is lower temperatures than is possible by the pyrolitic way plasma source. Fitting all of this in a small volume was a capable of that is widely used today. nightmare. We did that and built a system that is PC producing controlled. A person doesn’t have to do anything manually. nitrides with Q What are the benefits of growing nitride films by This system also has a turbo-molecular pump. Unlike other very low levels plasma-assisted MOCVD? systems where you have pressures only going to milliTorrs, of hydrogen with this system you can go to the 10-6 to 10-7 range. So it impurities A Nitrogen has some metastable states with long lifetimes, and plasma enhancement of nitrogen allows you to lower deposition temperatures. Reducing the temperature wherever you can is important, because higher temperature reactors are more difficult to build and require longer times to cool. Another benefit is using nitrogen instead of ammonia. Then you don’t need the hydrogen source. Hydrogen is not a good thing in these films, whether its silicon nitride or gallium nitride. It forms a vacany, making an intermediate state that will interfere with the proper operation of the device. In fact, in my earlier silicon nitrogen work, hydrogen would even migrate from the capping material to the gate area and cause threshold shifts. Plasma-enhancement gives you an opportunity to reduce the hydrogen content and the temperature at which the films can be grown. Q Are there other benefits to using nitrogen gas, rather than ammonia, for the nitrogen source? March 2011 www.compoundsemiconductor.net 21 Corporate Profiles.qxp 25/2/11 14:51 Page 22 CORPORATE PARTNERSHIP To become a Corporate Partner, and be in Compound Semiconductor, contact Shehzad Munshi T: + 44 (0) 1923 690 215 E: [email protected] Nanomaster Final.qxp 24/2/11 15:32 Page 23 Nanomaster interview is incredibly clean. All the turbo molecular pump heaters, chambers, power supply and RF connections are in the table-top cabinet. Growing InN nanorods by Q Does the cabinet accommodate absolutely everything? plasma-enhanced MOCVD A We provided bubblers for our first customer. But the Hae-Won Seo’s research team at the University of Arkansas at Little Rock, volume of some of the bubblers was too big for their in partnership with researchers at National Sun Yat-Sen University, Taiwan, applications and it also required filling at their location. have employed the Nanomaster plasma-enhanced MOCVD tool for the They went to different bubblers and chillers, and all that growth of InN nanorods. These nanostructures have interesting assembly went down on the floor. The only other thing characteristics, including strong quantum confinement and very high outside the cabinet is the mechanical pump. surface-to-volume ratio, but their growth is challenging. If the growth temperature is 500 °C or more decomposition of InN occurs, but switching Q Is it possible to put in-situ monitoring equipment into to lower temperatures tends to increase the density of defects and your reactors? dislocations in the crystal, leading to high carrier concentrations. The US- Taiwanese partnership addressed this issue with a MOCVD-based A Yes, we don’t have any limitations in terms of technique that employs a 50 W, 13.9 MHz nitrogen plasma, a flow ratio of chamber size. What’s more, there is no limitation in this nitrogen to indium of 6000:1 and base and chamber pressures of 5 x 10-6 geometry for diagnostics compared to any other tool. Torr and 2 x 10-1 Torr, respectively. Turning to this approach led to an Although you have a plasma source on top, you can optimum growth temperature of 500 °C, which enabled the growth of high- always have a small area where you can look at the quality InN nanorods on silicon (111) substrates. surface through an optical window. It is also possible to do optical thickness measurements at oblique angles, and Scanning electron microscopy revealed that the nanorods are straight, have for temperature uniformity, you can put a pyrometer into a diameter of 90-120 nm, are typically 3.2-3.5 μm in length, and are the chamber. It important to remember that the substrate uniformly dispersed on the substrate with an areal density of 3-5 x 107 cm-2. is not rotating. In that sense, all the measurements will be The researchers have also studied the photoluminescence spectra even easier. produced by their nanorods at a range of temperatures between 7K and 160 K. At the lowest temperature, the full-width half maximum of the Q Today you are offering two tools: the NMC-3000, photoluminescence peak is just 27 meV. The narrow peak is claimed to be which accommodates a 2-inch wafer, and the NMC-4000, indicative of a high material quality and a low intrinsic carrier concentration. which can hold a 6-inch wafer. Both of these are intended for R&D work. If they were scaled, would they be suitable The work of the researchers is reported in detail in J. Nanosci. for high-volume manufacture? Nanotechnol. 10 6783 (2010) A The way that the machine operates currently is to put down thin films at slow rates. Manufacturing applications need more throughput and higher deposition rates. That information because our demonstration system will be would require operating at higher pressures, which is complete by then. Then we will try MOCVD at much counter-productive, because plasmas like to operate at higher pressures. Today, you can grow clean, uniform, pressures in the sub-Torr range. If you go to 10 Torrs or high-quality films, but the rates are low. They can be 100 Torrs, like you do in an industrial machine, you may enhanced by special design of the plasma source. not be able to enhance with the plasma. So the window where plasma enhancement may be applicable is not as We will also be able to obtain uniformity data for our tool. broad as all applications of MOCVD. However, it may that I wouldn’t expect any problems with that because the for a subset of certain MOCVD applications, where you plasma source, the chamber and heating system are all may get certain benefits, you might comprise on much larger than the substrate size. And there is a perfect throughout for quality. circle of symmetry in our chamber. Q Do you have any plans to develop a multi-wafer tool? © 2011 Angel Business Communications. Permission required. A What we would like to do – and this requires the availability of funds – is to build a cluster tool using an NMC-4000. A number of tools, served with a robotic Birol Kuyel is president and CEO of Nanomaster. load-lock, could be run in parallel to reach production He has a broad portfolio of expertise, including levels of throughput. high-temperature plasma physics, Si3N4 film deposition and characterisation, X-ray and deep UV source Q What are you short term goals? development. He has been awarded 9 patents and published numerous papers. A Six months down the road we will have a lot more March 2011 www.compoundsemiconductor.net 23 p24 24/2/11 15:13 Page 24 (==21(,QWHJUDWHG&RQWUROOHUV IRU7HPSHUDWXUH0DQDJHPHQW RI+HDWHG([KDXVW/LQHV :DWORZ·VLQWHJUDWHGPXOWLIXQFWLRQFRQWUROOHUVGHFUHDVHGHVLJQDQG DVVHPEO\WLPHUHTXLUHOHVVVSDFHPLQLPL]HV\VWHPFRPSOH[LW\DQG EHVWRIDOOORZHUWKHWRWDOFRVWRIRZQHUVKLS (==21(LQWHJUDWHGFRQWUROOHUVFDQEHFRQILJXUHGWRSURYLGHKLJK DQGORZWHPSHUDWXUHDOHUWVQRWLI\LQJHQGXVHUVZKHQH[KDXVWOLQHV KDYHUHDFKHGWKHLUPD[LPXPDQGPLQLPXPWHPSHUDWXUHVPLQLPL]LQJ XQVFKHGXOHGGRZQWLPH7KH\DOVRLQFOXGHGDWDORJJLQJFXUUHQW PHDVXUHPHQWLQSXW352),%860RGEXV7&3(WKHU1HW,3 DQG'HYLFH1HW &RQWDFW:DWORZWRGD\IRUWKHODWHVWWKHUPDOVROXWLRQV IRU6HPLFRQGXFWRUDSSOLFDWLRQV Watlow Ltd. Robey Close Watlow GmbH Linby Industrial Estate Lauchwasenstr.1 Linby, Nottingham, NG 15 8AA 76709 Kronau United Kingdom Germany +44 (0) 115 964 0777 +49 (0) 7253 9400 0 [email protected] [email protected] Why should you use an electron beam lithography system from Vistec? Based on our broad experience gathered over many years of developing, manufacturing and world-wide servicing field-proven electron beam lithography systems, a team of highly-motivated employees, excellent researchers and high-quality engineers is constantly doing their best to fulfil our customers’ requirements. Your Dedicated Performance Partner for Electron Beam Lithography Vistec Electron Beam Lithography Group I www.vistec-semi.com Glasgow Final.qxp 24/2/11 15:23 Page 25 technology processing Conductive polymers offer charge dissipation in GaN and ZnO sample processing Conducting polymers such as polythiophenes promise to replace metallic films for charge dissipation in semiconductor processing. This switch should provide ease of use and deliver results of unprecedented quality, say Rafal Dylewicz and Faiz Rahman from the University of Glasgow, UK. reating structures in semiconductor materials is fundamental to making all Csemiconductor devices. A wide variety of process techniques are employed to craft various types of surface features. Several of these rely on the use of charged particles – electrons or ions – for their operation. Such processes include ion-based etching, electron-beam lithography and focused ion-beam techniques. Both electron-beam lithography and FIB techniques can be used for patterning semiconductor surfaces and are widely used in both research and industry. A direct side effect of any such technique is charge accumulation, which results in sample charging. While conductive substrates tend to lose accumulated charge quickly, less conductive substrates tend to keep their charge and the resulting electric field causes problems during sample processing. It is customary to coat vulnerable substrates with a thin layer of a suitable metal in order to obtain a high conductivity surface layer capable of effective charge dissipation. Both the deposition and the subsequent removal of such metallic charge dissipation films is an added complication. This is especially true when samples need to be processed further and the metallic film needs to be removed. This happens, for instance, when samples are merely observed using scanning electron microscopes (SEMs) before undergoing further processing. Our group at the University of Glasgow, UK, has been exploring the use of conducting organic polymers for replacing metallic charge dissipation layers. Such materials offer convenience in both application and Fig. 1. PSS:PEDOT conductive polymer used for an advanced micro- and subsequent removal of electrically conducting thin films. nano-fabrication processes: a) scanning electron microscope investigation Examples of potential polymers include polyaniline, of a polymer surface, after spin-coating deposition; b) schematic polythiophenes and polyfluorenes. The ability of thin presentation of ZnO and GaN samples used in the experiment, where polythiophene layers, in particular, to dissipate HSQ e-beam resist was further patterned by electron-beam lithography March 2011 www.compoundsemiconductor.net 25 Glasgow Final.qxp 24/2/11 15:24 Page 26 processing technology Fig. 2. Results of electron-beam lithography on bulk ZnO samples: a) linear approximation of measured hole diameter as a function of exposure dose, for three investigated cases; b) SEM micrographs of a photonic crystal lattice fabricated in HSQ resist on bulk ZnO, for an exposure without any electron dissipation layer (top) and an exposure with 100-nm-thick PSS:PEDOT layer used (bottom). accumulated charge in electron-beam lithography process regions. In addition, values of extinction coefficient for a on wide bandgap semiconductors has been the subject of thin polythiophene film are negligible in a wide range of much of our recent investigations. Wide bandgap wavelengths, including the visible light spectrum, as semiconductors such as SiC, ZnO and GaN are important experimentally determined with the use of a rotating members of the compound semiconductor family, so their analyzer ellipsometer. The optical transparency of processing is of vital importance to both researchers and polythiophene charge dissipation layers makes it easy to industrial engineers. see the sample surface and perform any alignment operations required to align patterns relative to pre- Our work has focused on ZnO and GaN, typical wide existing device features. bandgap semiconductors that display low surface conductivity. The aim of this work was to create dense Electron-beam lithography periodic nano-patterns in hydrogen silsesquioxane (HSQ) Our process is simple, inexpensive and can be used with negative type e-beam resist, so that passive photonic any wide bandgap semiconductor or dielectric material. devices could be fabricated in these semiconductors by a However, it is described here in the context of electron- subsequent dry etch process. We used a commercially beam lithography exposure of dense and high-resolution available 2.5 percent water-based dispersion of poly(2,3- patterns in hydrogen silsesquioxane (HSQ) negative type dihydrothieno-1,4-dioxin)-poly(styrenesulfonate), i.e. resist deposited on bulk ZnO and GaN/AlN-on-sapphire PEDOT:PSS from Sigma-Aldrich. The high electrical substrates. conductivity and good oxidation resistance of these polymer films make them suitable for electromagnetic Both scanning electron microscope inspection and shielding and noise suppression applications. electron-beam lithography patterning of ZnO and GaN face difficulties because these materials are not able to The optical transmission spectrum of the polythiophene efficiently dissipate the charge that accumulates during film deposited on a float glass substrate reveals a such processes. Consequently it is common practice to featureless transmission curve. The polymer film, perform e-beam lithography of wide bandgap therefore, possesses high transparency throughout the semiconductors with a thin conducting metal layer, usually visible spectrum and even into the near-IR and near-UV aluminium or gold, deposited on top of the e-beam resist. The aim of the work was to create dense periodic nano-patterns in hydrogen silsesquioxane (HSQ) negative type e-beam resist, so that passive photonic devices could be fabricated in these semiconductors by a subsequent dry etch process 26 www.compoundsemiconductor.net March 2011 Glasgow Final.qxp 24/2/11 15:24 Page 27 technology processing Furthermore, the processing of ZnO is difficult due to the fact that it is an amphoteric oxide, and is thus easily attacked by both acids and bases – typically used for the removal of metal films. Use of conducting organic polymers in place of metallic films does not involve any special resist preparation steps. Processing involves spin-coating of a conductive polymer (PSS:PEDOT) on top of a HSQ-coated sample, electron- beam writing of dense patterns in the resist, removal of the PSS:PEDOT layer and, finally, development of the exposed HSQ e-beam resist. A layer of PEDOT:PSS polymer, spin-coated on a glass cover-slip, was investigated with a Hitachi S4700 scanning electron microscope at a moderate accelerating voltage of 5 kV, without any additional sputter-coated conductive layer. It is seen in Figure 1a that PSS:PEDOT appears to form a porous film, which contributes to the ease of its removal with water. A schematic diagram showing the use of commercially available PEDOT:PSS conductive polymer to dissipate charge in electron-beam lithography, for both bulk ZnO and epitaxial GaN/AlN/sapphire samples, is shown in Figure 1b. Comparison of the experimental results for the ZnO sample appears in Figure 2. The fabricated nano-patterns included a 50 μm x 10 μm area of W1 (one row of holes water, which makes it a perfect solution for the processing Glasgow removed) and W3 (three rows of holes removed) photonic of amphoteric oxide samples, such as ZnO. GaN University crystal (PhC) waveguides with a triangular lattice of holes processing also benefits from the use of a polymer cloister arches (periodicity of 550 nm, designed hole diameter of 440 dissipation layer due to the extended exposure range and nm). Numerical data in Figure 2a include three different the avoidance of dense pattern overexposure in HSQ. The cases, where no electron dissipation layer, a 40-nm-thick use of PEDOT:PSS coating, therefore, makes e-beam aluminium layer and a 100-nm-thick conductive polymer processing of ZnO and GaN sample much simpler, layer were used on top of the HSQ resist. Thus, quicker, and less expensive. conventional aluminium and the proposed polymer approach were compared and good agreement between This benefit is, of course, not limited to just these two these results is reported, whilst the new method semiconductors but may be extended to the processing of considerably simplifies sample processing. other semiconductors and dielectric materials. Although not described here, our work shows that FIB-based Scanning electron microscope observations of the processing can also similarly benefit from the application resulting photonic crystal patterns, exposed with the same of conducting polymers. dose of 474 μC/cm2 are shown in Figure 2b at two different magnifications of 2k and 70k. For pure HSQ The authors would like to thank the technical staff of resist without a charge dissipation layer (Figure 2b, top) the James Watt Nanofabrication Centre and the Kelvin severe overexposure of the PhC pattern was observed. Nanocharacterisation Centre at the University of Despite properly defined holes on the edges of an array, Glasgow, United Kingdom. They would also like to thank the middle part of the PhC lattice exhibited signs of a Szymon Lis (Wroclaw University of Technology, Poland) strong proximity effect, which is indicated by a decrease for ellipsometer measurements. in SEM observation contrast. When a conductive polymer layer was used sharply defined holes were obtained within © 2011 Angel Business Communications. highly uniform photonic crystal lattices, as additionally Permission required. indicated by high contrast SEM micrographs (Figure 2b, bottom). Further reading After sample processing, the spin-coated conducting R. Dylewicz et al. Electron. Lett. 46 1025 (2010) polymer may be easily removed due to its solubility in R. Dylewicz et al. J. Vac. Sci. Technol. B 28 817 (2010) March 2011 www.compoundsemiconductor.net 27 Electroluminesene Final.qxp 24/2/11 15:22 Page 28 technology photovoltaics Electroluminescence exposes individual performances in multi-junction cells Conventional multi-junction cell measurements only yield the characteristics of the entire device. In stark contrast, a novel electroluminescence approach can probe far deeper, extracting the current-voltage curves for individual sub-cells that hold the key to optimising the overall conversion efficiency, say the technique’s pioneers, Raymond Hoheisel, Sebastian Rönsch, Frank Dimroth and Andreas Bett from the Fraunhofer Institute for Solar Energy Systems and Helmut Nesswetter and Claus Zimmermann from EADS Astrium. 28 www.compoundsemiconductor.net March 2011 Electroluminesene Final.qxp 24/2/11 15:22 Page 29 photovoltaics technology onversion efficiency is the key characteristic Figure 1: for solar cells. Increase this and photovoltaic (a) GaInP Cinstallations become more attractive because fewer cells top cell EL are needed to generate a given power. This makes the image of an 8 installation more affordable and also reduces the amount x4 cm2 triple of space required for the photovoltaic system. junction space solar cell The most efficient solar cells utilize a very high proportion showing lateral of the sun’s radiation, which spans a spectral range inhomogeneities extending from the ultraviolet to mid-infrared. To capture and (b) GaInAs this radiation and convert it to electrical power effectively middle cell EL photovoltaics employ a collection of sub-cells designed to image of a operate in different spectral ranges. In these devices mechanically several p-n junctions made of semiconductors with damaged cell. different bandgap energies are stacked on top of each None of this other. information is accessible by One way to optimise the overall efficiency of these multi- (c) a standard junction devices is to first characterise each sub-cell, and optical then optimise its contribution to the overall performance. inspection Extracting this information is far from easy, but our partnership between the Fraunhofer Institute for Solar Energy Systems and EADS Astrium has pioneered a technique that can do just this, based on electroluminescence (EL) measurements. Today, no other technique can yield the information that is garnered by this approach. We have used this EL technique to investigate multi- junction solar cells made of the semiconductors GaInP, GaInAs and germanium, which together can yield record efficiencies of more than 42 percent under concentrated sunlight. Our technique is not restricted to this class of EL-emission can be detected in different ways. By device and can also be applied to multi-junction cells recording the EL intensity distribution with a CCD sensor based on organic materials, silicon and chalcopyrites. it is possible to expose lateral inhomogenities, a particularly important consideration in large space solar The monolithically stacked, triple-junction photovoltaic cells. Inserting output filters before the detector can cells that we are studying power satellites and generate select single sub-cell performance, allowing crystal electricity on earth, where they are deployed in systems defects that act as shunting paths to be detected, even that use mirrors or lenses to focus light by a factor of if they only affect one particular sub-cell. It is also possible several hundred. For both these applications, to use this approach to provide qualitative quality characterizing individual sub-cells not only aids device control, because this technique can expose material development – it also enables qualification testing during issues, such as cracks (see Figure 1b). In comparison, processing (see Figure 1) standard optical inspection reveals none of the lateral and vertical information accessible via EL- Lateral and vertical characterization characterization (see Figure 1c). Even more detailed Our EL technique involves forward biasing of the solar characterization of the cells can be realized by recording cell so that it operates as a light-emitting device. Each the EL-images of all of the sub-cells at a range of injection sub-cell has a different bandgap, so emits a different current densities. range of wavelengths (see Figure 2). Extracting cell I-V curves The EL technique that we are pioneering also yields Left: The ADM-Aeolus mission satellite orbiting the additional, incredible valuable information – the current- Earth. On board of this spacecraft, III-V voltage curves of individual sub-cells, information that can GaInP/GaInAs/germanium multi-junction solar cells drive improvements in multi-junction device performance power both communication systems and diverse and enable the introduction of dedicated in-line inspection scientific experiments Credit: ESA procedures. March 2011 www.compoundsemiconductor.net 29 Electroluminesene Final.qxp 24/2/11 15:22 Page 30 technology photovoltaics Current-voltage curves for individual sub-cells cannot be accessed with a sun-simulator because the cells are monolithically connected in series and metal contacts are only on the front and back sides of the device (see Figure 2). The sun-simulator is limited to characterising the current-voltage curve of the triple-junction, and can also extract values for the short-circuit current, the open- circuit voltage, the fill factor and the efficiency of the Figure 2: entire device. Schematic of a GaInP/GaInAs/ The foundations of our EL technique are theoretical germanium developments detailed in two landmark papers. Uwe Rau lattice matched from Forschungszentrum Jülich wrote one of these; the triple-junction lead author for the other was Rau’s colleague Thomas solar cell. The Kirchartz. Co-authors on this paper were Rau; Anke bandgap Helbig and Jürgen H. Werner from the Institute for energies and Physical Electronics, Stuttgart; and Martin Hermle and emitting Andreas Bett (an author of this feature) who both work at wavelengths of the Fraunhofer Institute for Solar Energy Systems (see each subcell Further Reading for paper references). are indicated One cornerstone of this theoretical work is the so-called reciprocity relation. By measuring the spectrally resolved electroluminescence signal and the external quantum efficiency for each sub-cell, it is possible to access its Figure 3: (a) Spectrally resolved EL spectrum at a dark current-voltage and illuminated current-voltage constant injection current-density of 37.5 mA/cm2 and characteristics. (b) external quantum efficiency (EQE) of a 2x2 cm2 lattice-matched Ga0.50In0.50P/Ga0.99In0.01As/germanium We have adopted this approach to study a triple-junction solar cell. Each EL peak is related to Ga0.50In0.50P/Ga0.99In0.01As/germanium lattice-matched one of the sub-cells. The three EL peaks emerge at the triple-junction cell, extracting information that can be used same energy as the declining slope of the to predict the power performance of this photovoltaic corresponding EQE because both are related to the device under realistic operation conditions. band gap energy of the sub-cell Terrestrial concentrator system of III-V multi-junction GaInP/GaInAs/ The spectral reciprocity relation connects the intensity of germanium solar cells in Spain. the EL signal with the energy of an emitted photon, the Image courtesy of Concentrix internal voltage of the sub-cell and the external quantum Solar, Division of the Soitec Group efficiency of the sub-cell. This efficiency depends on the black body photon flux, which is described by Planck’s formula. The first step is to measure the EL at a range of injection current densities when no light is incident on the cells. Once this is complete, the external quantum efficiency for each of the sub-cells is measured (see Figure 3). By applying the spectral reciprocity relation, the voltage of each sub-cell can then be calculated as a function of the dark-current density – this provides the dark current- voltage characteristics for each sub-cell. Once the ‘dark’ current-voltage characteristics of the respective sub-cells are known, the illuminated current- voltage characteristics of individual sub-cells and of the 30 www.compoundsemiconductor.net March 2011 Electroluminesene Final.qxp 24/2/11 15:22 Page 31 photovoltaics technology whole multi-junction device can be easily calculated for any desired spectral condition using superposition principles. Our studies have shown that there is excellent agreement between the resulting current-voltage curves derived by EL-analysis and those yielded by a sun-simulator (see Figure 4). This figure illustrates the great strength of the EL-characterization technique: In addition to predicting the combined current-voltage characteristics of the multi- junction solar cell, it reveals, in detail, all sub-cell current- voltage characteristics, including fill-factors and absolute voltage properties. In principle, it is possible to derive the current-voltage curves under any spectrum of interest with our approach. Figure 4: I-V characteristics with fill factor (FF) and These curves are extracted by inserting values for the efficiency (η) of the sub-cells and the triple-junction photocurrent density of each sub-cell, which can be found solar cell (3J) under AM0 illumination conditions. The by integrating the measured quantum efficiency with the plot includes also the directly measured I-V curve of new spectral operation condition. Based on the resulting the triple-junction solar cell (3J) by a sun simulator current-voltage curves it is possible to estimate the performance, efficiency and fill factor – both at the sub- cell and multi-junction level – under the desired spectral operation condition of interest (see Figure 5). Catering for resistance effects is easy, too. Our development of the EL technique has shown that it has a great deal to offer to both developers and manufacturers of multi-junctions cells. It provides qualitative and semi- quantitative information on lateral and vertical inhomogeneities, making this approach an attractive technique for fast in- line inspection during the cell growth process and module assembly. In addition, our EL technique is unique in being able to yield detailed information concerning the current- voltage curves of individual sub-cells, which hold the key to precise device improvement. What’s more, fill-factor behaviour and the efficiency under arbitrary illumination Figure 5: I-V characteristics with fill factor (FF) and conditions can be determined by our novel approach, efficiency (η) of the subcells and the triple-junction aiding long-term energy harvesting analysis. solar cell (3J) under illumination conditions with reduced illumination in the absorption range of the top © 2011 Angel Business Communications. cell. The plot includes also the directly measured I-V Permission required. curve of the triple-junction cell (3J) by a sun simulator. Further reading M. A. Green et. al. Progress in Photovoltaics: Research and Applications 19 84 (2011) H. Yoon et. al. Progress in Photovoltaics: Research and Applications 13 133 (2005) M. Yamaguchi et. al. Solar Energy Materials and Solar Cells 90 3068 (2006) C. G. Zimmermann IEEE Electron Device Letters 30 825 (2009) C. G. Zimmermann Journal of Applied Physics 100 23714 (2006) S. Roensch et. al. “Subcell I-V-characteristic analysis of GaInP/GaInAs/Ge solar cells using electroluminescence measurements”, to be published. U. Rau et. al. Physical Review B 76 085303 (2007) T. Kirchartz et. al. Appl. Phys. Lett. 92 123502 (2008) March 2011 www.compoundsemiconductor.net 31 Quantasol Final.qxp 25/2/11 09:50 Page 32 technology solar cells Tuning the triple-junction Extracting the very best performance from a triple junction photovoltaic demands optimisation of the absorption edge of every sub-cell. Incorporating quantum wells into the cells can realise this, while allowing the device to be tailored for the spectral conditions where it will be deployed, say QuantaSol’s Keith Barnham, Alison Dobbin, Matt Lumb and Tom Tibbits. hotovoltaic installations are going up and up. Like any new technology, the initial cost of these Despite the sharp downturn in the global economy, concentrating photovoltaic (CPV) systems is high. This Pdeployments continue to rise at an exponential rate in many partly accounts for their initial deployment in the very countries, according to a recent report from the International sunniest climes, where it is most cost-effective. Here Energy Agency’s Photovoltaic Power Systems engineers are honing the technology that is used to track Programme. Germany continues to lead the way in the path of the sun across the sky and ensure that the photovoltaic deployment thanks in part to the success of sunlight is optimally focused on the cells. As time goes its feed-in tariff program, and in 2009 it installed nearly on, increased sales of this technology will drive down 4 GW. Now its recipe for success is being adopted by costs at both the system and cell level. This will increase several other countries, including the UK, through the the appeal of this technology, which can generate up to introduction of their own market stimulation packages. three times the electricity from the same system area as one based on second-generation cells. Maintaining this rapid growth in cell deployment hinges on further cost reductions, which is possible with the Quantasol’s quantum wells introduction of third generation cells. Those that are Quantasol, a spin-out from Imperial College London that tipped to make the first major contribution are the triple- is based in Kingston upon Thames and was founded in junction cells based on GaInP, GaAs and germanium. This 2007, is well placed to supply high-efficiency cells to the type of device is already the cell of choice to power growing number of CPV module and system manufacturers. satellites, and when it is used on earth it can realise One of our key strengths is our exclusive, patent-protected, efficiencies in excess of 40 percent – roughly three times quantum-well (QW) technology that boosts the efficiency that of second-generation, thin-film cells made from of triple-junction cells by around 3 percent in absolute materials such as cadmium telluride and copper indium terms (see Figure 1). This means that we can regularly gallium selenide. realise 40 percent median efficiency across our High production wafers, making the performance of our cells concentration The key to realizing low costs compared to second- comparable to those made by the market leaders. systems are generation cells is to use the triple-junction devices in automated to concentrator systems that employ cheap plastic mirrors What’s more, our novel cells promise to set a new track the sun and lenses to focus sunlight by factors of around 500 benchmark for efficiency that cannot be matched with and keep the onto the expensive III-V cells. conventional triple-junction cells, a factor that has helped sunlight us run a successful sampling campaign with customers focused on the through the US, Europe and Asia. This has swelled our small, high order book, which stands in excess of 1MW of solar cells efficiency cells. for delivery through the first half of 2011. The first systems have We have been pioneering the commercial development of been deployed III-V cells with QWs for several years, beginning with the in locations incorporation of these layers into single and dual junction with large cells. Incorporating wells into the cell increases device amounts of efficiency, because it enables the cell to absorb light at direct solar longer wavelengths. However, it is only possible to benefit insolation from this if the introduction of multiple quantum wells Image courtesy (MQWs) does not degrade the material quality of the of Daido Steel entire cell. We meet this criterion by strain-balancing our 32 www.compoundsemiconductor.net March 2011 Quantasol Final.qxp 25/2/11 09:50 Page 33 solar cells technology sources, which were used to generate the solar spectra for each hour of the year in locations deemed favourable for the first CPV installations. The solar spectra were used to model the annual energy harvest of a traditional triple- junction device and another featuring MQWs. Efficiency gains stemming from the introduction of the QWs varied from 3.5 percent to more than 5 percent, with the greatest benefit coming in areas where the spectrum contains more red-light than the ASTM reference spectrum, such as Solar Village in Saudi Arabia (see Figure 2). Even higher gains are possible by modifying the band- edge of the middle cell and the transparencies of the top Figure 1. The blue histogram shows efficiency two sub-cells so that they are all tuned to the incident measurements at 200x concentration of 171 cells of spectra. This results in roughly another 1 percent increase standard triple junction design from one of eight in energy harvest. wafers grown on a multi-wafer production reactor. The red histogram shows measurements of cells on a similar Deciding on the best design for a particular location wafer with 50 quantum wells grown in the middle cell. requires a full-year analysis of the ratio of short circuit The median efficiency has increased by 3 percent currents for the top and middle cells. The photocurrents absolute. Measurements were made at 200x concentration from these cells must be closely matched to achieve the on a WACOM solar simulator (1000 Wm-2 at 1 sun) highest energy harvest efficiencies (see Figure 3). Interestingly, the highest daily energy output coincides structure. In these QW cells of high material quality, the with the peak in incident energy (blue and black lines in only loss mechanism for current carriers generated by the Figure 3). So, to extract as much electrical energy as possible incoming sunlight is radiative recombination back to from our cells, we are tailoring device design to maximize photons, a process that cannot be prevented from the energy harvest efficiency at the same time of the day happening. But we do not waste these photons. Instead, and year as the peak in irradiance. This principle is also we confine a significant proportion of them within the being applied to boost revenue generation by tuning cells device – so that they can be re-absorbed and generate to perform at their best during utility peak delivery times. electricity – by incorporating a reflector into the structure that is similar to the type used in vertical-cavity lasers. This Doubling up on quantum wells modification to the conventional device architecture Looking to the future, we have started to investigate the justifies our claim to be the greenest of the solar cell advantages of MQWs in the top and the middle cells of a companies – we even recycle waste photons! triple-junction device. One motivation behind this effort, which has been pursued in partnership with the Imperial Recently, we have been developing triple-junction cells College London QPV group that first developed the QW with QWs in the middle junction. This structure gives us a cell, is to optimise the absorption profiles of the cells. In a major advantage over competitors, because our engineers can optimise the absorption edge of the middle cell during growth. Thanks to this, the absorption in the middle cell can be tuned to match the spectrum of sunlight at different times of day or year, and consequently optimise the cell for a given concentrator, at a given geographic location, for maximum electrical energy harvest over the year. Optimising short wavelength performance CPV systems rarely operate at their full potential at shorter wavelengths due to relatively high optical attenuation in this spectral range. Mornings and evenings, atmospheric pollution and turbidity, and the concentrator optics themselves all serve to reduce the energy available for the top two cells in triple-junction devices. However, by adding quantum wells and redesigning the top cell Figure 2. The simulated increase in power output of a absorption appropriately, it is possible to increase the MQW triple-junction device over a bulk triple-junction spectral envelope from which the top two cells harvest device under the ASTM G173-03 reference spectrum, energy by about 5 percent, according to calculations that and the increase in energy harvest calculated using we presented at the 5th World Conference on Photovoltaic hourly spectra specific to La Parguera in Puerto Rico, Energy Conversion in Valencia last September. These South West US, Gujarat in India and Solar Village in calculations employed a variety of atmospheric data Saudi Arabia March 2011 www.compoundsemiconductor.net 33 Quantasol Final.qxp 25/2/11 09:50 Page 34 technology solar cells Figure 3 a) Daily incident energy density (blue), energy harvest efficiency (red), b) device energy output (black) and mean current match ratio (orange) for a simulated device under an hourly varying spectrum specific to the South West US conventional triple-junction device, the absorption edges which is known to dominate the loss in the middle cell. An of both the top and middle cell are at shorter wavelengths intriguing possibility arises if this also happens in the top than ideal. cell. In that case, the majority of the photons created by radiative recombination in the top cell will be emitted from Our modeling indicates that efficiencies well in excess of the bottom of the quantum well, and most of these will then 40 percent are possible with MQW-based cells that shift be re-absorbed in the middle cell, boosting its current output. the absorption edge to longer wavelengths (see Figure 4). These calculations – which are based on a concentration To understand how this affects the overall performance of factor of 500 and have been plotted for the specific our triple junction device, we have repeated the calculations choice of the solar spectrum used in the standard test for this scenario. Results are plotted in Figure 4, using condition – show how optimising the absorption edge of blue contours and blue numbers. These results indicate our top and middle cells can yield overall efficiencies up to 45 percent. To illustrate what is feasible for a dual MQW device, a rectangular area bounded by a green dotted line is included in this plot and it can be seen that absorption edges reaching the 45 percent efficiency contour are possible. As the solar spectrum changes by day and during the year, it shifts these contours that map out the conversion efficiency. The large rectangular area shows that the quantum wells add tremendous flexibility in the choice of absorption edges for both cells, indicating that it should be possible to optimise the design for maximum energy harvest over a very wide range of spectral conditions. The primary rival to our dual-MQW triple-junction cell is Figure 4. The colored areas separated by black numbers the metamorphic triple-junction cell grown on a relaxed show how the efficiency of a dual-MQW triple junction buffer layer, which is often referred to as a virtual substrate. cell at 500x concentration varies with the absorption With this design, the absorption edges of the top and edge of the top cell and the middle cell. The green middle cells can be extended to longer wavelengths. broken-line rectangle represents the variation in However, these adjustments cannot be made independently – absorption edge possible for the dual-MQW cell. The the tuning of absorption that is possible with the metamorphic black broken-line arrow represents the absorption edge design is shown by the black arrow in Figure 4. This arrow variation possible for the competitor metamorphic cell. can, in principle, be extended to higher efficiency In all cases the recombination loss in the top and contours. However, such a move pays the penalty of middle cell is assumed to be radiative. The blue greater relaxation in the buffer, leading to more residual contour lines (blue numbers) show the efficiency when dislocations and ultimately an increase in efficiency loss. radiative recombination photons from the top cell are One assumption in these calculations is that the main loss absorbed in the middle cell. These contours are wider mechanism in the top MQW cell is radiative recombination, than when radiative coupling is ignored 34 www.compoundsemiconductor.net March 2011 Quantasol Final.qxp 25/2/11 09:50 Page 35 solar cells technology novel cells this is far less of an issue, because they can be designed with deep wells in the top and middle cells, a modification that allows efficiencies of more than 40 percent to be achieved at operating temperatures of 90 °C. This cell heating can be put to good use, allowing this device to feature in integrated, combined heat-and-power applications that further reduce electrical generation costs. High temperature operation of the cells mean that the cooling water can be used in the building, because a temperature of 90 °C is high enough to run an absorption Power chiller providing air conditioning. generating window formed Meanwhile, the cells can generate electricity. With three from times the efficiency of a second generation cell, they can transparent be used on buildings in less than ideal locations, such as blinds feature vertical walls in northern latitudes, and still generate more Fresnel lenses electricity per square meter over a year than second- that focus generation cells. direct sunlight Figure 5. The radiative efficiencies of two MQW top onto cells grown on a research reactor compared with a Our MQW cells are also ideal for use in smart, power luminescent typical MQW middle cell. Efficiencies have been generating windows. The blinds, which are transparent light bars which extracted from measurements of the cell dark-current. Fresnel lenses tracking the sun, focus the direct sunlight further on a luminescent light bar while allowing the indirect concentrate the sunlight into the room for internal illumination, thus sunlight on that radiative recombination of photons from the top cell reducing electricity demand. The QW cells are mounted cells in the that are subsequently absorbed by the middle cell has a in the window frame. The cooling water can be used for frame. Diffuse major benefit - a widening of the sweet spot for very internal purposes including running air-conditioning, the light illuminates efficient operation. This means that the efficiency of a demand for which is highest when the sun is shining. the room. triple-junction device with QWs in two of the cells will (Courtesy vary less with changes in spectral conditions than one Many other applications will open up for small-sized, high- Solarstructure incorporating wells into just one cell. concentration units offering more than double the Ltd.) electrical efficiency of first- and second-generation Realising such high efficiencies in real devices requires photovoltaics. If first-generation cells, which supplied the the top cell to be radiatively efficient. Initial results, which household’s electricity, were replaced by such a system we presented in Valencia, are promising. The radiative covering the same roof area, the extra electricity produced efficiency, which was extracted from measurements of the could power the family electric car for the year, even in dark-current of MQW top cells grown on a research rainy England! In addition, this system could supply the reactor at the EPSRC National Centre at the University of household’s hot water requirements. Sheffield, increases with concentration (see Figure 5). The initial values for radiative efficiency for the top cells are At Quantasol, we are well placed to capture a significant not as high as for the more mature middle cell, but it does proportion of the ever-increasing orders for third- increase with the number of quantum wells. If around 50 generation cells, and we are destined to become a major of these are incorporated into the top well, the efficiencies player in this market. The versatility of our cells enables predicted in Figure 4 should be realised. them to maximise electrical energy harvesting in varying spectral conditions as well as to cope with the challenges Focusing sunlight by a factor of 500 or so onto a cell causes provided by the ingenuity of concentrator manufacturers. it to heat up. Cooling can reduce this rise in temperature, which is beneficial for conventional triple-junction cells, © 2011 Angel Business Communications. because as they get hotter, the cell efficiency falls. In our Permission required. Further reading International Energy Agency, Photovoltaic Power Systems Programme. IEA-PVPS T1-19: 2010, http:/ /www.iea-pvps.org/ S. Kurtz, National Renewable Laboratory Technical Report, NREL/TP-520-43208, (2009), http:/www.osti.gov/bridge K.Arthur and K. Barnham Compound Semiconductor, Jan&Feb 2008, 22 A. Dobbin et al. submitted to Solar Energy Materials and Solar Cells, February 2011 K. Barnham et al., 5th World Conference on Photovoltaic Energy Conversion (WCPEC5) , Valencia, 234 (September 2010). K. Barnham et al. Nature Materials 5 161, (2006). March 2011 www.compoundsemiconductor.net 35 In Gan Final.qxp 24/2/11 15:26 Page 36 technology lasers Getting to grips with nitride laser failures Nitride lasers, which are a key component in Blu-ray players and recorders, still suffer from limited reliability. The origin of this failure is controversial, but there is strong evidence to suggest that point defects are to blame, argues Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso and Enrico Zanoni from University of Padova, Italy. 36 www.compoundsemiconductor.net March 2011 In Gan Final.qxp 24/2/11 15:26 Page 37 lasers technology hipments of nitride lasers are going up and up. These devices are already being used for optical Sstorage systems, such as Blu-ray players, and as time goes on they will also start to be deployed in laser projection systems based on red, green and blue lasers, plus a variety of biomedical systems. Today, Blu-ray players and recorders represent by far the biggest market for the InGaN-based laser. In this application 405 nm sources are focused to a spot size of 580 nm and used to extract data from discs storing up to 25 GB per layer. Reading the data from the discs requires just 5-10 mW, but writing demands far higher powers. 100-300 mW sources are not uncommon, and even higher powers are needed to realise really fast writing in point defect density in the active layer, which increases Fig. 1: The speeds, because then the laser has even less time to the non-radiative recombination rate and ultimately the structure of transfer energy to the media. threshold current density, while there is also a school of the lasers thought that as the laser is driven, current confinement analysed within Reaching high optical power levels requires operating at under the ridge worsens, inducing an increase in the this work, current densities of up to 10 kA/cm2 and electrical input threshold current and a shift in emission wavelength. and of the powers in excess of 1W. The effective penetration of Meanwhile, some are saying that operating the laser for split-wafer these devices into commercial applications is governed by many hours leads to the formation of dislocations in the experiment that their reliability; while some studies have demonstrated active region, and subsequently the generation of dark was carried lifetimes of several thousand hours, device reliability regions, as recently demonstrated for MBE-grown out to study during operation at high output power levels is still a samples. laser critical issue. Many research groups around the world are degradation trying to understand the cause of laser failure and putting The lack of consensus over the cause of parametric forward conflicting views regarding its primary cause. degradation is partly because the physical mechanisms responsible for the degradation of InGaN-based laser The first generation of laser diodes, which were made in diodes have not been univocally identified. This is the 1990s, had very short lifetimes. In many cases high generating important discussion in the GaN-laser dislocation densities were to blame, which led to community. catastrophic failure. To address this and other problems related to dislocation densities, improved growth Our group at the University of Padova, Italy, in close techniques such as Epitaxial Lateral Over Growth (ELOG) co-operation with Panasonic Corporation, has been able were introduced to improve crystal quality. Dislocation to demonstrate that the increase in non-radiative densities then fell to 106 cm-2 or less. recombination – due to the generation of point defects – plays a major role in determining the degradation of Despite these important improvements, InGaN-based InGaN-based lasers. We have also shown that long-term laser diodes still suffer from a gradual decrease in device degradation of lasers is not strongly related to the performance during operation. This weakness, which is degradation of the facets, nor to the worsening of the known as parametric degradation, is something of a hot confinement or injection efficiency. Our results strongly topic within the nitride laser community and is being avidly support the hypothesis that a necessary step towards the discussed at conferences and in the academic literature. development of highly reliable laser diodes is the optimisation of the active layer, including its radiative Is it this, that or something else? efficiency, over the full lifetime of the device. One view is that InGaN-based laser failure stems from degradation at the facets, which leads to increasing mirror We arrived at these conclusions after extensively losses, higher threshold currents and reduced slope comparing the electro-optical degradation of laser diodes efficiency. Others argue that over time there is an increase and LED-like samples – devices with the same epitaxial March 2011 www.compoundsemiconductor.net 37 In Gan Final.qxp 24/2/11 15:26 Page 38 technology lasers Fig. 2: significant variation in slope efficiency was detected after Degradation of stress, demonstrating that carrier injection efficiency is the optical unaffected by ageing. Furthermore, during ageing, characteristics threshold current increases with the square-root of stress of one of the time. This result has been described by several research analysed lasers. groups, and indicates that a diffusion process is involved Inset: threshold in degradation. current increase measured Many groups have tried to identify the impurity or defect during stress involved in this diffusion process: both an experimental time on one of effort based on Secondary Ion Mass Spectroscopy the analysed (SIMS) and a theoretical approach based on the analysis samples. of the degradation kinetics were recently adopted. SIMS Threshold investigation by Piotr Perlin and colleagues from Unipress, current Poland, which was reported at the EMRS Fall meeting in increases 2010, indicated that degradation is not correlated to the according to structure as the lasers, but devoid of ridges and facets. instability of magnesium and hydrogen, two species that the square-root Results indicate that the same degradation mechanism, were previously indicated to be involved in the of stress time, namely the decrease in internal efficiency, is present both degradation process. indicating that a in laser diodes and LED-like samples. In other words, diffusion devices with strong geometrical constraints, mirrors and Meanwhile, the theoretical approach taken by Kenji Orita process is cavities degrade in the same way as simple structures and co-workers from Panasonic demonstrated that under involved in with no ridges or facets. nominal operating conditions the diffusion coefficient of degradation the impurity involved in the degradation process is around Analysis was carried out on triple-quantum-well devices 1.9 x 1019 cm2/s. This is very high compared to the grown on a GaN substrate and emitting at 405 nm (Blu- diffusion coefficient of the most common impurities in Ray technology). A split-wafer experiment was designed GaN. as follows (see Figure 1): half of the wafer was processed in order to obtain laser diodes with 600 μm-long cavities; Getting to the point the other half was used to yield LEDs with an area of 75 x We also found that our LED-like samples exhibited a 200 μm2. Devices were submitted to constant current significant degradation during constant current stress: stress, with current densities in the range 2-4 kA/cm2, and Degradation was found to be more prominent at low a case temperature equal to 75 °C. measuring current levels, indicating that stress induces an increase in non-radiative recombination. Furthermore, laser The most noticeable consequence of this stress is the diodes and LED-like samples submitted to constant increase in laser diode threshold current (Figure 2). No current stress showed similar degradation kinetics, strongly suggesting that the two different kinds of devices degrade due to the same physical process, which is the generation of point defects. It is possible to gain further insight into the degradation process by performing extensive characterisation of the electrical characteristics of the devices during stress time. We have found that stress induces a significant increase in defect-related current components, such as generation, recombination and reverse currents. This suggests that the defectiveness of the active layer is increasing during stress time. Interestingly, defect-related current was found to increase according to the square-root of stress time, exactly as we have found for the optical power degradation. Our set of results allows us to draw several important Fig. 3: Recombination dynamics in laser diodes conclusions regarding the origin of degradation. First, it is 38 www.compoundsemiconductor.net March 2011 In Gan Final.qxp 24/2/11 15:26 Page 39 lasers technology Another point worth noting is that the optical degradation of LED-like samples is more prominent at low measuring currents, indicating an increase in non-radiative recombination components under these conditions within the active layer. Since degradation occurs both in laser diodes and in LED-like samples, we can argue that the laser’s ageing is not due to the high optical field present in the cavity clear that the slope efficiency of the lasers is unaffected by stress, which indicates that long-term degradation of the device is not related to a decrease in injection efficiency (the proportion of electrons that are injected into the quantum wells). We can also say that a diffusion process can be responsible for the measured optical degradation, because degradation kinetics follow the square root of stress time. Another point worth noting is that the optical degradation of LED-like samples is more prominent at low measuring currents, indicating an increase in non-radiative recombination components under these conditions within the active layer. Since degradation occurs both in laser diodes and in LED-like samples, we can argue that the laser’s ageing is not due to the high optical field present in the cavity. And finally, we note that optical degradation is strongly correlated to the increase in defect-related current components: Stress, therefore, is considered to induce the generation/propagation of defects within the active layer of the samples. Is current confinement to blame? for recombination is still to be exposed. How to identify Recently, Jens Müller and co-workers from Osram this villain remains a big question. Finally, most of the suggested that the optical degradation of lasers could be studies on laser reliability have been carried out on Blu- related to the worsening of current confinement under the Ray devices, which have a relatively good lattice quality. ridge, which could lead to an increase in threshold What about longer-wavelength samples? Will green current. lasers show similar degradation characteristics? The road to the optimisation of InGaN-laser diodes is still long. However, our study demonstrates that degradation occurs in both laser diodes and in LED-like samples. This © 2011 Angel Business Communications. strongly supports the hypothesis that degradation is not Permission required. correlated to the geometry of the devices, nor to a degradation of the mirrors. Further reading Despite the important results presented recently in the T. Schoedl et. al. J. Appl. Phys. 97 123102 (2005) literature, the challenge is still open: Several issues must M. Meneghini et. al. IEEE Electron Device Letters 9 578 (2008) be solved to identify the origin of the degradation of S. Tomiya et. al. Proceedings of the IEEE 98 1208 (2010) InGaN-based laser diodes. First of all, although we know J. Müller et. al. Appl. Phys. Lett. 95 051104 (2009) that degradation is related to a diffusion process, the M. Rossetti et. al. Appl. Phys. Lett. 92 151110 (2008) impurity or defect involved in diffusion has not been K. Orita et al., Proc. IRPS 2009 univocally identified. In addition, although we indicate that P. Perlin et al, MRS Proceedings 2010 non-radiative recombination plays a major role in the M. Meneghini et. al. Appl. Phys. Lett. 97 263501 (2010) degradation process, the defect or deep-level responsible March 2011 www.compoundsemiconductor.net 39 Edwards v3FINAL02.qxp 25/2/11 10:14 Page 40 materials abatement Burning beats scrubbing in LED fabs Mike Czerniak, product marketing manager for exhaust gas management at Edwards makes the case for combustion based abatement as a cheaper, more environmentally friendly alternative to wet scrubbing. he volume of compound semiconductor emissions from GaN MOCVD processes, to ensure that processing has risen rapidly over the last decade, nitrogen oxide and nitrogen dioxide (i.e. NOx), both Tdriven primarily by increasing demand for LEDs. These regulated global warming gases, are not created. high-brightness light emiters that are made by a GaN MOCVD process are now widely used for backlighting flat Wet scrubbing — the traditional approach screen televisions and computer monitors, and they are While wet scrubbing is probably still the abatement likely to see increasing adoption as an alternative to technology most commonly used with MOCVD incandescent and fluorescent lighting. The benefits LEDs processing, it is becoming less popular because of the offer include longer operating life, a more natural light hidden costs associated with it. In wet scrubbing, spectrum and reduced power consumption. emission gases are typically bubbled through a tub of water. Unfortunately, this does not remove hydrogen, the As with solar manufacturing, compound semiconductor most common MOCVD gas by-product, which has manufacturing must address two key concerns to typically been vented into the atmosphere. While successfully supplant more conventional, established hydrogen is not considered a global warming gas, it is technologies. The first is to lower the price of highly flammable, and there is always a slight, but manufacturing to make LEDs cost-competitive with the potential danger that static electricity could ignite the alternatives. The second is to ensure that the LED hydrogen during the abatement process, causing an manufacturing process has a minimal environmental explosion and fire. In Asia, a formerly popular solution was impact and complies with the increasingly stringent global to place an electrically-heated thermal oxidizer in series regulations concerning air emissions and waste water. with a wet scrubber to incinerate the residual hydrogen. While the extraction, safe handling and disposal of the This hot-wet scrubber approach has become less acceptable gases used in the MOCVD process used to manufacture in Korea, for example, due to new water emission LEDs significantly adds to manufacturing cost of regulations and the increased cost and system footprint. ownership, the choice of abatement technology can Figure 1: significantly reduce manufacturing costs in terms of While water scrubbing can eliminate ammonia, the 160 slm NH3 energy use, water consumption and treatment. This article second most common gas by-product, there is a danger + 320 slm will compare the costs and efficiency of traditional water in those regions with hard water that ammonia will react H2 being scrubbing abatement technology with combustion technology. with the salts that are present, producing solids that can combusted build up in the abatement system, thereby requiring under low-NOx The GaN abatement challenge increased maintenance and raising system cost of conditions The two most common gas by-products of the GaN ownership. Since hard water occurs anywhere that MOCVD manufacturing process are ammonia (NH3) and mountain run-off is a major source of water, this is an hydrogen. Both of these gases are highly flammable, while issue in most parts of the globe. It is not a problem, ammonia is, in addition, toxic and has an objectionable incidentally, that is solved by using hot-wet scrubber odour. The emission of ammonia is strongly regulated technology. globally, both to water and atmosphere. In the past, hydrogen emissions were not tightly regulated, since this In addition, dissolving ammonia in water can result in the gas was not seen as a pollutant. This is changing in many presence of nitrogen that can promote biological activity regions, mostly because of the increasing fire risk this such as algae blooms, which deteriorate water supplies poses. In addition, care must be taken in abating by reducing the oxygen content. As a result, the allowed 40 www.compoundsemiconductor.net March 2011 Edwards v3FINAL02.qxp 25/2/11 10:14 Page 41 abatement materials discharge limits in many regions have been reduced. Figure 2: While there are a number of ways of treating this problem, A combustion- each has its own drawback. By adjusting the acidity and based temperature in a high flow of air, ammonia can be abatement removed from the solution and turned back into a gas. It system, such can then be treated in a number of different ways. It can as Edwards’ be diluted with non-polluting gases and discharged into Spectra G, the atmosphere. While this is cheap, it typically fails to uses the gases meet new regional emission standards and pollutes the to be abated environment. One can use a catalytic converter, which to fuel the breaks the ammonia down into nitrogen and hydrogen. reaction While this approach works, it does result in a safety issue due to the pyrophoric nature of the hydrogen, and it is expensive in volume production environments. Finally, one can expose the waste water to an acid like ammonium sulfate, which does have the benefit of producing a by- product that has value as a fertilizer, but this approach typically fails to meet the new nitrogen-in-water emissions regulations. Each of these approaches, however, increases the cost of abatement, and, in addition, may not meet emission requirements in all regions. Efficient cost Combustion-based abatement technology addresses the abatement challenges involved in GaN MOCVD required to run the pumps and the costs of water manufacturing by burning the ammonia and hydrogen in a treatment. As a result, combustion-based abatement controlled way. This approach eliminates the hydrogen technology is extremely well-suited for regions with tight safety issue and the maintenance problems caused by water-use regulations. ammonium solids at a significantly lower operating cost than that of wet scrub technology. Both ammonia and Compared to wet scrub systems, with their pumps and hydrogen are flammable, so a combustion-based water treatment subsystems, combustion-based abatement system, such as Edwards’ Spectra G, uses the abatement systems are much simpler in design and have gases to be abated to fuel the reaction. Figure 1 shows far fewer moving parts. As a result, maintenance these gases being burned in a combustion-based requirements – as well as maintenance times and spares abatement system. The only outside energy source inventory – are significantly reduced.This produces a employed by a combustion-based abatement system much lower operating cost per process tool per year. operates a small pilot light similar to the one used in home While the capital costs of wet scrub and combustion- heating systems, with the exhaust gases themselves based abatement systems are roughly equivalent, the providing the bulk of the fuel for combustion. As a result, operating cost per tool per year for a combustion-based combustion-based systems use considerably less energy system is approximately one-tenth that of a wet scrub than wet scrub systems, which helps lower operating system. In addition, combustion-based systems have a costs and results in a smaller carbon footprint. In addition, smaller footprint, thereby saving valuable fab real estate. A heat generated during gas combustion can be recovered combustion-based abatement system may occupy as little and used for facility water heating, which can save up to as 1.8 x 1.2 x 0.75 m3, compared to a wet scrub system $20,000 a year in facility utility costs. that may occupy 2-3 times this space. Spectra G combustion systems are cooled using the air When burning ammonia in a combustion-based system, flow generated by the house extraction system. This there is always a danger of creating NOx emissions, which design feature ensures that combustion by-products are are strictly regulated in most regions. Careful efficiently transported from the system to the factory management of the combustion process, to prevent central scrubber or dust filter. This air-cooled design oxidation of the gases being burned, can avoid the eliminates many of the fixed and operating costs formation of these polluting emissions. If not, a NOx associated with wet scrub technology, including the cost removal plant is required, which adds considerably to both of water, the capital and operating costs associated with equipment size and annual operating costs. In a non- the pumps required to pump the water, the energy oxidizing combustion system, however, destruction and March 2011 www.compoundsemiconductor.net 41 Edwards v3FINAL02.qxp 25/2/11 10:14 Page 42 materials abatement Edwards’ Spectra G systems are designed to provide reliable, high performance, low cost abatement of hazardous exhaust gases from MOCVD processes that use large flows of hydrogen and ammonia removal efficiencies of greater than 99.5 percent can be external traps by including a special pre-cleaning stage in achieved with resultant NOx levels below threshold limit the first portion of the cartridge that results in the volumes. formation of stable inorganic solids. Each module treats up to 20 slm of ammonia and multiple modules can be Edwards’ Spectra G systems (see Figure 2) are designed combines together, making it suitable for R&D applications. to provide reliable, high performance, low-cost abatement This kind of low-cost abatement approach eliminates of hazardous exhaust gases from MOCVD processes that concern about NOx generation and uses neither water nor use large flows of hydrogen and ammonia. They offer up fuel, making it an ideal approach for regions with water to six process inlets and a very large gas handling capacity. usage restrictions. Nitrogen can be safely vented to the Typical gas loading for a system is 300 liters of hydrogen atmosphere, while hydrogen must be treated in another and 200 liters of ammonia per minute, which equates fashion in regions restricting its release to the environment. roughly to the exhaust output of two to three process tools. It is clear that LED technology must overcome two major challenges to successfully supplant conventional established In addition to the benefits of combustion-based exhaust mass lighting technologies — lower the cost per lumen, and systems in terms of safety, lower CoO and reduced ensure that the GaN MOCVD processes used to produce environmental concerns, combustion-based abatement them are not seen as major pollution sources. These technology has a well-established track record for manufacturing processes use large flows of hydrogen and reliability. Hundreds of these systems are deployed at a ammonia which must be abated for both environmental and variety of companies in the flat panel and solar cell safety reasons, since they are both flammable and ammonia industries. The efficiency of its gas treatment process has is toxic. In addition, it is critical that the formation of NOx be been field-tested and meets the most stringent air avoided during the abatement process. emission regulations in Europe, the US and Asia. It is currently experiencing a high rate of adoption by leading While wet scrubbing has traditionally been the abatement LED manufacturers world wide. Edwards offers an technology of choice for MOCVD processes, it is more additional technology for treating the significant ammonia costly than combustion-based abatement technology in flows present in the exhausts of nitride-based MOCVD terms of energy consumption, water usage, and it does processes by decomposing this gas into its constituent not treat hydrogen. In regions where hydrogen is Table 1. elements, nitrogen and hydrogen, using a heated dry regulated and cannot simply be vented to the atmosphere, A comparison cartridge technology. This technology, which comes in a an electrically heated thermal oxidizer must be used in of the benefits modular system known as GaNcat, eliminates the series with a wet scrubber to address this issue, further of different possibility of contamination of the cartridge by the increasing the cost of this technology. In addition, there is abatement metalorganic gases that are also present, such as TMG, the danger of the build-up of ammonium solids in the technologies TMI and TMA. This is achieved without the need for abatement system, which requires increased maintenance, further increasing abatement costs. A further concern involves free nitrogen in the waste water, which can lead to algae blooms, thereby lowering water quality. Combustion-based abatement systems offer a lower cost and more efficient solution. Since they use no water and use the emission gases themselves as a fuel source, operating costs are much lower than wet scrub systems in terms of operating costs. Combustion-based systems are also simpler in design, requiring less maintenance and occupying less fab real estate, which further contributes to a low cost of ownership. In addition, non-oxidizing combustion-based technology, such as that employed in Edwards’ Spectra G system, eliminates the danger of the formation of NOx, which is tightly regulated in most regions of the world. © 2011 Angel Business Communications. Permission required. 42 www.compoundsemiconductor.net March 2011 Research Review Final.qxp 24/2/11 15:55 Page 43 review research Nitride cells start delivering high efficiencies Reduced internal electric fields, rougher surfaces and the introduction of superlattices are helping to drive up the efficiencies of nitride solar cells COMPARED to lasers, transistors and LEDs, He explains that the main challenge to solar cells based on nitrides tend to deliver realizing such devices is the growth of high- poor performances. But these materials can quality InGaN layers with high indium content. yield efficient photovoltaics, according to “Should this problem be solved, a single research by both a pair of Japanese nitride solar cell makes perfect sense.” Universities and by a team led by the University of California, Santa Barbara (UCSB). Matioli and his co-workers have built devices with highly doped n-type and p-type GaN Engineers at Meijo University and Nagoya regions that help to screen polarization- University have shown that InGaN/GaN related charges at hetero-interfaces that superlattice structures can realize an limit conversion efficiency. Another novel external quantum efficiency (EQE) of more feature of their cells are a roughened surface than 40 percent over the 380-425 nm range. that couples more radiation into the device. And researchers at UCSB and the Ecole Photovoltaics were produced by depositing Figure 2: Absorption and EQE data Polytechnique, France, have reported a peak GaN/InGaN p-i-n structures on sapphire by highlights the device’s high internal EQE of 72 percent at 380 nm. Both cells MOCVD. These devices featured a 60 nm- efficiency in the 380-420 nm range . have the potential to be incorporated into a thick active layer made of InGaN and a Credit: UCSB traditional multi-junction device to harvest p-type GaN cap with a surface roughness the high-energy region of the solar spectrum. that could be adjusted by altering the content layers by turning to superlattice growth temperature of this layer (see Figure 1). architectures. Initially, the engineers “However, the ultimate approach is that of a fabricated two type of device: a 50 pair single nitride-based cell, due to the coverage of The researchers measured the absorption superlattice with alternating 3 nm-thick the entire solar spectrum by the direct bandgap and EQE of the cells at 350-450 nm (see layers of Ga0.83In0.17N and GaN, sandwiched of InGaN,” says UCSB’s Elison Matioli. Figure 2 for an example). This pair of between a 2.5 μm-thick n-doped buffer layer measurements revealed that radiation below on a GaN substrate and a 100 nm p-type 365 nm, which is absorbed by GaN, does cap; and a 50 pair superlattice with not contribute to current generation – instead, alternating layers of 3 nm-thick Ga0.83In0.17N the carriers recombine in p-type GaN. and 0.6 nm-thick GaN, deposited on the same substrate and buffer as the first Between 370 nm and 410 nm the absorption design and featuring an identical cap. curve closely follows the plot of EQE, indicating that nearly all the absorbed The second structure, which has thinner photons in this spectral range are converted GaN layers in the superlattice, produced a into electrons and holes. These carriers are peak EQE in excess of 46 percent, 15 times efficiently separated and contribute to that of the other structure. However, in the power generation. Above 410 nm, more efficient structure the density of pits is absorption by InGaN is very weak. Matioli far higher, which could account for the and his colleagues have tried to optimise halving of the open-circuit voltage. the roughness of their cells so that they absorb more light. However, even with their To realize high-quality material with high best efforts, at least one-fifth of the efficiency, the researchers turned to a third incoming light is either reflected off the top structure that combined 50 pairs of 3 nm- surface or passes directly through the cell. thick layers of Ga0.83In0.17N and GaN with 10 Two options for addressing these pairs of 3 nm thick Ga0.83In0.17N and 0.6 nm- shortcomings are to introduce anti-reflecting thick GaN. Pit density plummeted to below and highly reflecting coatings in the top and 10 6 cm-2 and peak EQE hit 59 percent. bottom surfaces, or to trap the incoming radiation with photonic crystal structures. The team is aiming to now build structures with higher indium content. “We will also “I have been working with photonic crystals fabricate solar cells on other crystal planes for the past years,” says Matioli, “and I am and on a silicon substrate,” says Kuwahara. Figure 1: Lowering the temperature of the investigating the use of photonic crystals to p-type GaN capping layer from 955 °C to nitride solar cells.” Y. Kuwahara et. al. (2011) App. Phys. 880 °C increases its roughness, leading Express 4 021001 to a higher proportion of radiation being Meanwhile, Japanese researchers have been E. Matioli et. al. (2011) Appl. Phys . Lett. trapped by the cell. Credit: UCSB fabricating devices with higher indium 98 021102 March 2011 www.compoundsemiconductor.net 43 Research Review Final.qxp 24/2/11 15:55 Page 44 research review density. Plots of LED efficiency as a function Standard model fails to fully of the square root of light output power show that the ABC model could not account for the behaviour of real LEDs. If a account for LED droop good fit is obtained for the efficiency curve at carrier densities below that of the peak Plotting LED efficiency against carrier density exposes LED efficiency, then the model fails to keep pace with the decline in efficiency at higher fundamental limitations in the widely used ‘ABC’ model carrier densities. The team has also studied how predictions A TEAM led by Fred Schubert’s group at One of the predictions made by the ABC of the ABC model vary when it accounts for Rensselaer Polytechnic Institute have model is that any plot of LED efficiency as a phase-space filling – the filling of the uncovered a fundamental flaw in the model function of carrier density (plotted on a log conduction and valence bands in an unequal used to describe carrier behaviour in an scale) will be symmetric. manner, due to the different masses of LED. This model – often referred to as the electrons and holes. Catering for this effect ABC model – has been widely used in “Real data from us and others is not still leads to even symmetry in plots of internal discussions about the origin of droop, the symmetric,” says Schubert. “For this reason, quantum efficiency as a function of carrier decline in nitride LED efficiency at high we feel that the ABC model is insufficient density. Schubert says that these experiments current densities. for describing droop.” show that at high current densities there is a significant loss process that depends on the The ABC model states that carriers undergo The team, which includes researchers at fourth power of the carrier density. one of three processes: Shockley-Reed-Hall Sandia National Labs and Samsung LED, recombination, a non-radiative process that have measured the efficiency of two “ The fourth order term suggests an active is proportional to the carrier density; different multi-quantum well devices: a process that goes beyond the three radiative recombination, which is commercial LED emitting at 463 nm and a conventional processes [non-radiative proportional to the square of the carrier 444 nm emitter. recombination, radiative recombination and density; or Auger recombination, a non- Auger recombination] and could be carrier radiative recombination process that Direct measurements of carrier density are leakage.” depends on the cube of the carrier density not possible, so the researchers recorded and has been claimed by several groups to the light output power instead. The square- Q. Dai et al. (2011) Appl. Phys. Lett. 98 be the primary cause of droop. root of this is proportional to the carrier 033506 Metal-semiconductor alloy boosts MOSFET performance Nickel-InGaAs alloy slashes source and drain resistance, paving the way to higher drive currents JAPANESE engineers have turned to a the drive current produced by the MOSFET. metallic nickel-InGaAs alloy to cut the source and drain resistance of InGaAs The researchers produced their novel channel MOSFETs, which are promising contacts for their InP-based MOSFETs by contenders to maintain the march of directly reacting nickel and InGaAs during a Moore’s Law at the 11 nm mode. rapid thermal annealing step at 250 °C. There is a high degree of uniformity in this alloy, Forming low resistance contacts with according to transmission electron microscopy conventional methods is tough due to low measurements. dopant solubility, according to corresponding author SangHyeon Kim from the University InGaAs MOSFETS are fabricated with a Engineers have fabricated a portfolio of of Tokyo. If source and drain resistances are self-aligned metal source-drain structure transistors with gate lengths of 5 μm, gate too high, they saturate the on-resistance in widths of 150 μm and a range of InGaAs deeply scaled MOSFETs with a gate length “Using salicide – an alloy between silicon compositions. On-off ratios are 104, peak of 30 nm or less. and a metal like nickel-InGaAs – we can mobilities hit 2000 cm2 V-1s-1, and source reduce the source-drain resistance due to a and drain resistances are five times lower The team, which includes researchers from very low resistivity of salicide,” explains Kim. than that in p-n junctions. Sumitomo Chemical Company and Tsukuba’s National Institute of Advanced Industrial With this approach, it is possible to control “We are planning to optimise our devices Science and Technology, produced their the indium content of the contact during and scale them,” says Kim. transistors using a type of self-aligned salicide epitaxial growth and ultimately reduce the source/drain process, which is used to reduce Schottky barrier height between the contacts SH Kim et al. (2011) App. Phys. Express contact resistance in silicon MOSFETs. and the channel. This promises to increase 4 0242017 44 www.compoundsemiconductor.net March 2011 Research Review Final.qxp 24/2/11 15:55 Page 45 review research Insight into GaN-based LED efficiency droop THE efficiency of most GaN-based LEDs decreases with higher injection current. Such a reduction in LED efficiency is commonly referred to as the LED efficiency droop. The droop phenomenon is universally observed across a broad wavelength spectrum of InGaN/GaN LEDs and also with ultraviolet AlGaN/AlN LEDs. This efficiency droop is currently subject of intense research worldwide, as it delays general lighting applications of nitride LEDs. Many proposals have been forwarded to explain the efficiency droop. One popular explanation is that the Auger recombination dominates the non-radiative loss at high injection current. Auger recombination is easy to understand and model since its rate increases with the third power of the carrier density, while the light-emission rate scales with the square of Auger recombination and electron leakage within an LED energy band diagram the density. As the carrier density increases with higher current, the Auger process 50:50 would make the electron leakage So, can this surprising temperature quickly overpowers the light emitting current large enough to account for the abnormality be observed experimentally? process, resulting in the efficiency droop. efficiency droop. The often assumed AlGaN Yes indeed! In an independent experimental band offset ratio of 70:30 does not allow for study, a team from Nagoya Institute of Despite its simplicity and convenience, the significant overflow. As the exact offset is Technology (Japan) recently published Auger droop model is not generally hard to measure or calculate, a ratio of electroluminescence measurements on 264 accepted. GaN-based materials have wide about 50:50 seems quite reasonable. nm AlGaN LEDs [4]. The Nagoya team not bandgaps while the common Auger process only found direct evidence for the electron is known to be strong only in The electron overflow is more difficult to overflow, they also observed that the semiconductors with a much narrower calculate than the Auger recombination as amount of leakage decreases with bandgap. The Auger droop model assumes the former is influenced by the interplay increasing temperature. These an Auger coefficient four orders of between the built-in polarization charges measurements serve as an impressive magnitude larger than predicted by text- and the p-type doping in the neighborhood confirmation of the overflow model for the book theories of the GaN Auger process. of the EBL. The polarization interface charge efficiency droop; however, other Researchers from the NUSOD Institute LLC tends to reduce the electron barrier of the mechanisms may still be involved [1]. (Newark, DE, USA) and Crosslight Software EBL while the ionized magnesium acceptors Inc. (Burnaby, BC, Canada) recently screen the interface charge, resulting in a With sophisticated simulation software and undertook investigations that shed new light strong influence of the EBL acceptor profile increasing computational power, on the origin of the LED efficiency droop on the leakage current. researchers are nowadays able to look phenomenon [2]. Using the advanced beyond the symptoms of the droop and into simulation software APSYS, they studied However, the EBL acceptor profile is often the interplay of the different internal physical another possible cause of the droop not well controlled during the epitaxial LED mechanisms, thereby moving towards the phenomenon: electron overflow into the growth process, which may be the reason ultimate cure for the efficiency droop. p-doped layers of the LED. for some confusing droop observations reported in the literature [1]. The new REFERENCES: Based on an earlier APSYS simulation APSYS simulation study also reveals a quite [1] J. Piprek, Physica Status Solidi A 270, study, electron leakage was first suggested abnormal thermal behavior: the electron 2217 (Oct. 2010) in 2007 as possible origin of the efficiency overflow decreases with higher temperature. [2] J. Piprek and S. Li, Optical and droop[3]. The new study reveals how This is a surprising prediction since most Quantum Electronics, Online First: sensitive the electron overflow is to the semiconductor devices ranging from www.springer.com (Feb. 2011) properties of the AlGaN electron blocker transistors to laser diodes perform better at [3] M. H. Kim, M. F. Schubert, Q. Dai, J. layer (EBL) typically employed in nitride lower temperatures while higher K. Kim, E. F.Schubert, J. Piprek, Y. Park, LEDs. Not only is the EBL band gap of temperature usually causes undesirable Applied Physics Letters 91, 183507 ( major importance but also the EBL band power losses. The reason behind this droop 2007) offset. Assuming a reasonably small Auger abnormality is that the hole transport [4] J. Zhang, Y. Sakai, and T. Egawa, coefficient, the new APSYS study shows improves at higher temperatures, leading to IEEE Journal of Quantum Electronics 46 that an EBL band offset ratio of about reduced electron overflow. 1854 2010) March 2011 www.compoundsemiconductor.net 45 Research Review Final.qxp 24/2/11 15:55 Page 46 research review Nanotechnology boosts thermoelectric performance Researchers from Boston College and MIT Moreover, according to Xiao Yan, their have turned to nanotechnology to achieve a techniques are less time-consuming and 60-90% increase in the thermoelectric cheaper than conventional methods. figure of merit (ZT) of a p-type quinary The researchers formed alloyed ingots using compound semiconductor known as a half- arc melting, before creating nanopowders Heusler. ZT is a term scientists use to by ball milling the ingots. Application of hot measure a material’s relative thermoelectric pressing yielded dense bulk material. performance. The work by Xiao Yan and Transport property measurements and Figure 1. TEMimages of hot-pressed co-workers paves the way for a new microstructural studies were performed on nanostructured samples under (a) low generation of cleaner products as diverse as the nanostructured samples and bulk ingots. and (b) high magnification. The inset in semiconductors, air conditioners, exhaust Results revealed that the ZT improves (a) is the selected area electron systems and solar power technology. The thanks mostly to the low thermal diffraction pattern showing the single material improved by the team was a half- conductivity arising from enhanced phonon crystalline nature of the individual Heusler p-doped bulk semiconductor scattering at grain boundaries and defects grains.Temperature-dependent (c) lattice compound with the chemical formula in the material and partially to the high part of thermal conductivity, and (d) ZT of Zr0.5Hf0.5CoSb0.8Sn0.2. This material isan “Seebeck” coefficient. The Seebeck ball-milled and hot-pressed sample in attractive prospect to the thermoelectric coefficient, or so-called thermopower, is a comparison with that of the ingot community due to its thermal stability, good measure of the magnitude of an induced mechanical sturdiness, non-toxicity and thermoelectric voltage with respect to the inexpensiveness. temperature difference across that material. However, the application of half-Heuslers is “In other words, the resistance to heat flow This work was published in the paper limited due to their poor thermoelectric increases without a degradation or even “Enhanced Thermoelectric Figure of Merit performance - peak ZT is around 0.5 at with an enhancement in the material’s of p-Type Half-Heuslers” by Xiao Yan,Giri 700oC for bulk ingots. A good electrical properties,” explains Gang Chen Joshi,Weishu Liu,Yucheng Lan,Hui thermoelectric material should have a ZT of MIT. Contributions to this work were also Wang,Sangyeop Lee,J. W. Simonson, S. above 1 across this temperature range. The made by S. J. Poon from University of J. Poon, T. M. Tritt, Gang Chen,and Z. F. scientists have increased the ZT value of the Virginia and T. M. Tritt from Clemson Ren, in Nano Letters, DOI: p-type half-Heusler to 0.8 at 700oC. University. 10.1021/nl104138t Germanium takes the Strain out of GaN-on-silicon epi If you want to grow n-doped GaN layers on Krost points out that using germanium as a silicon with minimal tensile strain, then dopant opens up the possibilities of consider using germanium, rather than realizing a wide range of GaN-on-silicon silicon as the n-type dopant. That’s the key devices, where thick highly n-conducting finding of a study by researchers from the layers are required. The researchers also Otto-von-Guericke-University Magdeburg, discovered that the formation of SiN at the Germany, that have compared the tensile edge dislocation core is the initiator of an strain of GaN layers doped with both of enhanced dislocation climb, even for already these group IV elements. tensely strained layers. This is in contrast to previous assumptions that the surface The researchers say that until now, good roughness of highly silicon-doped GaN-on- quality thick n-type doping of GaN-on-silicon silicon leads to edge-dislocation climb. has not been possible due to edge dislocation climb. This results in an Germanium doping has already been tested Doping GaN-on-silicon with an alternative is increasing tensile strain during epitaxial by Nakamura in the early 1990s. However, and old idea that is just coming into its own. growth. In fact, studies have shown that with a lower doping efficiency and as a The researchers expect not only an impact doping GaN-on-Si with silicon enhances more costly option to silicon doping, for GaN-based LEDs grown on silicon edge-dislocation climb. The scientists germanium doping has not been substrates, but also in power electronics. compared samples grown by MOVPE using established. The recent results obtained by For example in vertical Schottky diodes precursors for AlN and GaN growth the team headed by Alois Krost, on the which could now be grown with a highly processes. These were diluted silane other hand, show the absence of edge- conducting n-type layer and a thick, (100ppm) and germane (10%) in H2 for the dislocation climb in the case of germanium- undoped layer on top without any impact on silicon and germanium doping processes. doped GaN-on-silicon. strain development. 46 www.compoundsemiconductor.net March 2011 two day intertechpira conference plus expert pre-conference workshops Image Sensors Europe 2011 Focus on digital imaging 22 – 24 March 2011 Copthorne Tara Hotel, Kensington, London, UK www.image-sensors.com Be a part of THE leading industrial CS READERS GET 10% DISCOUNT forum for image sensors in Europe! BOOK NOW ON WWW.IMAGE-SENSORS.COM WITH PROMO CODE: CSS10%M ISE is the leading industry event where SPEAKERS the leaders of the image sensors world • Ir. 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For more information, visit us at www.temescal.net Contents ♦ news digest News Digest Contents 49 - LEDs 69 - Telecoms 90 - RF Electronics 105 - Lasers 110 - Solar 128 - Power Electronics 134 - Equipment and Materials 140 - Novel Devices March 2011 www.compoundsemiconductor.net 49 news digest ♦ LEDs Recently, the Centre has had its look updated, thanks to Signex LED architectural lighting. At LEDs the core of the lighting fixtures are Osram Opto Semiconductor’s Golden DRAGON Plus LEDs which help illuminate the multi-dimensional bubble- Cree and Zumtobel to like structures at the front of the building, attracting shoppers and tourists from afar. accelerate LED Downlight developments “When we were asked to create a lively illumination design for the Siam Discovery Centre, we The firms are extending their strategic agreement to immediately picked the Golden DRAGON Plus RGB move LED lighting forward in Europe. LEDs for their versatility in colour rendering,” said Pongskorn Ouvuthipong, LED Product Director, Cree, a leader in LED lighting, has a two-year Lighting and Equipment Public Company, which extension of the strategic agreement signed with designed and installed the Signex lighting fixtures Zumtobel Lighting GmbH in 2008. The companies with a computer-controlled DMX512. continue to work together to bring industry-leading LED lighting to Europe. “These RGB LEDs enable a wide range of colours, offering designers excellent flexibility in creativity. “Cree and Zumtobel see the LED lighting revolution Their consistency of colour bin also helps deliver taking hold in Europe and we are excited to sign accurate lighting effects.” this agreement and to continue to work together,” said Ty Mitchell, VP and general manager, Cree There are 24,000 LEDs being deployed in the 650 LED Lighting. “Zumtobel is a market-leading lighting sets of floodlights behind the transparent plastic company and is providing their customers with bubbles. The colour changing effect is designed high-quality LED lighting based on Cree TrueWhite by VISION DESIGN STUDIO (Thailand) which Technology.” programs the computer system and creates stunning colour patterns each evening. There will “In the past years, Cree has become one of our also be special lighting designs for different events preferred suppliers in the LED lighting business. using these LEDs. As we combine the best available technology with our outstanding lighting expertise and our strong IP “We are delighted that our Golden DRAGON Plus position, we enhance our leading position to bring LEDs help light up this landmark in Bangkok,” said LED lighting innovation into our markets,” said Kai-Chong Cheng, marketing director of Osram Harald Sommerer, CEO of the Zumtobel Group. Opto Semiconductors Asia. “Given the hot climate “We look forward to extending our successful of the city, the robust thermal management of these cooperation with Cree in the coming years.” LEDs, with thermal resistance of up to 11K/W, ensures the stability of the illumination effects. Long lifetime of over 50,000 hours (depending on operating conditions) of these LEDs also reduces Siam Discovery Centre maintenance work, causing minimal disruption to this busy shopping mall.” rejuvenated by Osram’s LEDs Opened in 1997, the Siam Discovery Centre has become a landmark in Bangkok. It’s “One Floor The firm’s Golden DRAGON Plus LEDs help – One Concept” configuration has gained much illuminate the multi-dimensional bubble-like acclaim among tourists and local shoppers. Today, structures at the front of the building, attracting this trendy shopping complex is still a favourite shoppers and tourists from afar. among Bangkok’s younger and fashionable crowds. The Siam Discovery Centre is one of Bangkok’s first The new LED architectural lighting adds a sense of shopping malls. modernity to the Centre and makes the shopping mall more prominent among the surrounding 50 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest buildings. With the new image, the Centre looks set This breakthrough was accomplished by growing to continue its popularity in the city. the active region of the deep UV-LEDs under a liquid phase growth mode. The growth proceeds by dissolving the arriving nitrogen and aluminium atoms in the liquid gallium and their incorporation in Plasma-assisted MBE growth the growing AlGaN film from the liquid phase. enables higher efficiency Thickness variations of the liquid gallium on the deep UV LEDs top of the growing AlGaN film would normally produce lateral variations in the composition of the Growing the active region of the deep UV-LEDs AlGaN alloys. This would lead to a band structure under a liquid phase growth mode produces promoting potential fluctuations to prevent carriers AlGaN alloys with a strong band structure potential for migrating and recombining non-radiatively in fluctuations and LEDs with high internal quantum dislocations or other defects. High IQEs of between efficiency. 30 percent and 50 percent have been reported by the team since 2009. BostonUniversity’s Wide Bandgap Semiconductor Lab claims that it has fabricated the first efficient The deep UV LEDs structures were grown by deep UV-LEDs in the 320 nm to 265 nm range plasma-assisted MBE incorporating such high IQE grown by plasma-assisted MBE. QWs together with a number of novel features such as polarisation enhanced n- and p-type AlGaN This method of growth was modified to lead to carrier injection layers. AlGaN alloys with a strong band structure potential fluctuations and LEDs with high internal quantum 300 μm x 300 μm bare-die devices emitting at 273 efficiency (IQE). nm have produced 0.4 mW output power at 25 mA DC drive current and 1.3 mW at 100 mA in the Over the last two decades,progress in producing pulsed mode. The EQE peaked at 0.4 percent. efficient deep UV LEDs has been hindered by the fundamental limitation in material properties of “We identify the problem in the deep UV-LED AlGaN. The lack of phase separation in AlGaN efficiency being the IQE, where drastic improvement means that the band structure prevents potential in fundamental material growth technology needs to fluctuations and carrier localisation. be obtained compared to incremental gain from chip design optimisation or packaging,” says lead author This leads to high sensitivity of the IQE of quantum Yitao Liao. wells in AlGaN-based LEDs to the density of dislocations and other defects, compared to InGaN- He explains that he and his co-workers have based blue LEDs. The IQE bottleneck in deep developed a unique process to manufacture AlGaN- UV-LED must be addressed before such devices based UV-LEDs with high efficiency on low cost can be used in high power applications such as c-plane sapphire. “Our advantages in the IQE will municipal and industrial water disinfection. become more evident at the device level after these bare-die LEDs get packaged to improve light extraction and heat sinking.” Further details of this work will be published in an article by Yitao Liaoet al., in Applied Physics Letters 98, 081110 (2011) March 2011 www.compoundsemiconductor.net 51 news digest ♦ LEDs LEDs deliver the light output — in all colours, Lumileds LUXEON LEDs efficacy, and for a structure like the Guangzhou Illuminate Guangzhou TV Tower, industry leading performance over time in virtually all weather related environments.” Tower The colourful, dynamic and vivid visual effect of the The Canton Tower, also known as the Guangzhou Canton Tower is made possible by more than 6,000 TV tower, is just one of the recent projects in China LED luminaires from Philips using just 500 KW of that has used LUXEON LEDs. power. In this case, more than 330,000 emitters bring a unique and distinctive landmark to life. Also acclaimed as “Slender Waist”, the 610-meter-high Canton Tower is the world’s highest stand-alone TV tower. Liu Wu Tunnel lit with LUXEON LEDs LUXEON LEDs are the light source of choice for world-famous landmarks, and recent lighting triumphs such as the illumination of the banks of the Pearl River, also in Guangzhou, with more than 700,000 LUXEON LEDs. The Guangzhou TV Tower lit with LUXEON LEDs Liao Ning Avenue with LUXEON LEDs The Guangzhou Tower relies on its outstanding LED Lumileds LUXEON white LEDs have also been lighting from Philips to integrate regular lighting with used for projects including the street lighting on festival lighting to meet the overall night view plan of Liao Ning Avenue in the Si Chuan Province, the the Guangzhou government, effectively improve the Guangzhou Opera Hall, and the Liu Wu Tunnel livable urban environment, and enhance the urban Lighting in Anhui Province, China. image of Guangzhou as an international metropolis. “The LUXEON LEDs used in the Tower’s lighting solution represent the most advanced technology available today,” said Frank Harder, VP of Marketing, LUXEON Product Lines. “LUXEON 52 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest He said another large Chinese customer purchased several Johnson Matthey Model PSH-60 purifiers capable of hydrogen flows of 60 Nm3/hr. This manufacturer of full colour LEDs designs, develops, makes and distributes full-colour ultra-high brightness LEDs, epitaxial wafers, photo-diode detectors and compound solar cells with an annual throughput of 550,000 epi-wafers and 16B LEDs. Johnson Matthey is seeing similar success in Taiwan, Bestrom noted. Among the major customers who have purchased several Model PSH-60 purifiers is a leading maker of pure-play, Guangzhou Opera House with LUXEON LEDs high power InGaN LED wafers and chips, and the only one in Taiwan offering a full spectrum of products including high power InGaN blue, green JM PureGuard Hydrogen and near-UV LEDs. Purifiers Popular for LEDs Another is using Johnson Matthey purifiers to supply ultrapure hydrogen to its growing number of Sales increased dramatically for Johnson Matthey’s high throughput MOCVD tools. This leading Asian advanced PureGuard hydrogen purifiers in 2010, manufacturer recently added 34 new MOCVD tools thanks largely to continuing rapid growth of LED production in Taiwan and China. China is strengthening its position as a major global manufacturer of LEDs, according to Johnson Matthey, a designer and manufacturer of Global Sources, a leading business-to-business hydrogen purifiers, has shipped its purifiers to new media company and primary facilitator of trade and expanding fabs for sensitive semiconductor with China companies. In recent months several applications, including MOCVD processes for leading international suppliers have invested in the LED production, crystal growth and PV deposition construction of factories in the Pearl, Yangtze and processes. Minjiang River delta regions, Bohai Rim Economic Region, and even in some parts of Middle Western Johnson Matthey’s state-of-the-art PSH Series China. bulk hydrogen purifiers are capable of providing 99.9999999% pure hydrogen for wafer fabrication. With global demand for LEDs outpacing yield, JM says the HP Series purifier product line is the said Global Sources, manufacturers are looking most popular and provides the purest hydrogen. to expand production capacity to curtail a looming deficit in supply. The growing popularity of LED- Stuart Bestrom, Sales Manager for Johnson backlit LCD TVs is expected to exacerbate the Matthey’s Gas Purification Technology (GPT) group, shortage. Each LCD panel for TVs generally said the company is committed to supporting the requires between 300 and 500 LEDs with a uniform growth of the global electronics industry, especially level of brightness. Laptops require only about 50. in Asia, the area of greatest expansion for LED production. “China will become important to the global LED industry this year,” said Zheng Haowen, director Bestrom said, in China for example, Johnson of the National High-Tech Enterprise Development Matthey has supplied purifiers to two major LED Professional Committee. “The total foreign high-tech manufacturers, one focusing on the investment for the sector is projected to exceed 60 development and large-scale production of ultra- billion Yuan ($8.8 billion), a phenomenal increase high brightness red, orange and yellow LED epitaxy from about 10 billion Yuan ($1.5 billion) in 2009. and chips, light communication components and other optoelectronic devices. Bestrom said that in 2010, China reportedly added more than 1200 MOCVD systems, a number March 2011 www.compoundsemiconductor.net 53 news digest ♦ LEDs that reflects the “extraordinary prosperity” of distributed lighting applications where the light the country’s LED industry. The main motives source is visible, such as panel lights and LED- encouraging such LED growth, he continued, are based fluorescent tube replacements. the subsidy policies of the Chinese government and the huge prospects for the LED market. Lighting manufacturers have tried to achieve a uniform lighting appearance by placing many low- In Taiwan, total LED production value reached power LEDs in close proximity under a diffuser. $5.43 billion last year according to the country’s This use of typical low-power LEDs will not enable Photonics Industry & Technology Development manufacturers to meet rigorous ENERGY STAR Association (PIDA). PIDA said with the continued requirements or customer’s expectations. In expansion of the LED application market, the contrast, Cree ML-B LEDs are designed to last annual growth rate is predicted to be 40 % this year 50,000 hours and to provide the lighting-class levels and also 40 %t in 2012, reaching $11.3 billion. of efficacy, thermal resistance and reliability that can enable ENERGY STAR.-qualified fixtures. Last year, reported PIDA, Taiwan was the number- one-ranked country in the world in terms of the “The innovative ML-B LED delivers lighting-class production output of LED wafers and chips, with performance with the smooth, uniform appearance sales of just below $2 billion. InGaN LEDs comprise that lighting manufacturers want for distributed 52 % of the production value; the market for lighting applications,” said Paul Thieken, Cree packaged LEDs was slightly less than $3 billion. director of marketing, LED components. “The ML-B The LED lighting segment in Taiwan is expected to LED provides the right balance of lumen output, grow rapidly in the next two years. footprint, efficacy and value for direct-view lighting.” According to Bestrom, Johnson Matthey’s palladium The XLamp ML-B LED delivers luminous flux up to membrane technology is preferred by PV and 30 lm at 80 mA in cool white (5000K) and up to 24 semiconductor fabs for use with the compressed lm in warm white (3000K). The ML-B LED shares hydrogen supply common in Asia and particularly the same footprint and package with the XLamp in China. “Compressed gas source contains ML-E LED, and like the ML-E, provides uniform higher levels of impurities and varying quality, and colour over angle and a 120 degree viewing angle. our palladium membrane technology offers the best capability to remove all oxygen and carbon XLamp ML-B LEDs are available now in sample impurities to parts-per-billion levels, with no effect and production quantities. from input impurities. These impurities must be consistently removed to assure the brightest LED’s. Our success in 2010 reflects not only the acceptance of our leading-edge technology, but also Kyma Breaks Record with our ability to be able to meet the heavy demand for 300mm AlN on Silicon purifiers in LED wafer and chip facilities.” Template Kyma says its tool is the first that is capable of Cree Reveals LED Optimised direct insertion into existing LED and power device for Distributed Illumination production and can grow other GaN related alloys such as InGaN and AlGaN. The firm’s new XLamp. ML-B LED is optimised for Kyma Technologies has commissioned its new lighting applications requiring exceptionally smooth high volume Aluminum Nitride (AlN) template light distribution. manufacturing tool with the world’s first 300mm (12- inch) diameter AlN on silicon template. Cree, a leader in LED lighting, has announced the commercial availability of the XLamp. ML-B LED. The tool is suitable for high quality gallium nitride (GaN) growth. Designed for quarter-watt operation, the XLamp ML-B LED brings lighting-class performance to 54 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest While other large area AlN processes have existed Kyma is a global supplier of crystalline gallium in the market for many years, Kyma’s says its nitride (GaN) and aluminum nitride (AlN) materials tool is the first that is capable of direct insertion for a broad range of high performance nitride into existing light emitting diode (LED) and power semiconductor device applications. device production. These processes also grow GaN and related alloys such as indium gallium nitride The company sys the market for nitride (InGaN) and aluminum gallium nitride (AlGaN). semiconductor devices is expected to surpass $30B over the next decade and the market for nitride The new AlN template tool was designed and based LEDs grew at almost a 100% year-over-year constructed by Bob Metzger, Kyma’s Chief rate in 2010 to nearly $12B. Engineer; it incorporates many of the features of, as well as improvements to, Kyma’s patented and proprietary III-N Physical Vapour Deposition of NanoColumns (PVDNC) technology that the Monocrystal Revenues Show company has used for more than 10 years. Market for Sapphire is on Fire Kyma initially used the PVDNC technology for its The firm’s annual financial results showed that net bulk GaN development efforts, until 2006, when income rocketed by 1,051% from $4.7million to the company began supplying AlN templates to the $54.1 million. commercial market. Additional template substrates such as sapphire, patterned sapphire, and silicon Monocrystal, a manufacturer of electronic materials carbide are also possible to run in the AlN process for LED and solar industries, has announced due to the system’s flexible design and Kyma’s preliminary financial results for its fiscal year ended long experience with PVDNC for nitride growth December 31, 2010. applications. Consolidated revenue for 2010 totalled US$153.0 “Market interest in our AlN templates has grown million, an increase of 204% compared to the rapidly over the last 18 months, especially in the revenue of US$50.3 million in 2009. Gross profit LED sector, where significant LED improvements grew 452% up to US$89.6 million from US$16.2 have been observed by customers using our million a year ago. PVDNC AlN templates. Specific improvements cited include: improved wavelength and brightness binning, lower defect density in the LED active region, higher device thermal conductivity, and up to 30% higher MOCVD system throughput,” said Ed Preble, Kyma CTO and VP Business Development. “This new tool increases our capacity 10-fold for 2”, 3” and 4” wafers; enables us to address the growing demand for larger 150mm and 200mm diameters; and also further raises the bar with its 300mm capability. While we acknowledge that work remains to improve the deposition uniformity for 300mm sizes, we are positively thrilled with the uniformity Net income shot up to US$54.1 million from and repeatability of the 2” through 200mm sizes and US$4.7 million, an increase of 1,051%. OIBDA look forward to qualification of the new tool with our was US$81.8 million, 448% higher than OIBDA of customers.” US$14.9 million in 2009. The company plans to demonstrate large diameter Strong gross, net and OIBDA margins of 58.6%, AlN templates on sapphire and to release the new 35.3% and 53.5%, respectively, represented a AlN template tool for full production in the coming significant improvement over the margins of 32.3%, weeks. 9.3% and 29.7% in 2009. March 2011 www.compoundsemiconductor.net 55 news digest ♦ LEDs Revenue of the sapphire segment grew 250% growth sooner than it is expected. and revenue of the solar pastes segment grew 161%, from US$25.4 million and US$24.5 million, “In addition to accelerating developments in the respectively, in 2009 to US$89.0 million for the LED lighting space, we observe a rapid shift at sapphire and US$63.9 million for the pastes in the forefront of LED manufacturing towards using 2010. larger size sapphire wafers. By providing our competence in the sapphire-for-LED technology, On a quarterly basis, Monocrystal recorded all-time we at Monocrystal are very pleased to support our high revenues in the fourth quarter 2010. Revenue customers in their transition to 6- and 8-inch wafers from the sapphire segment was a record $39.3 to help them increase productivity and cut costs,” million, an increase of 50% sequentially and up concluded Kachalov. 388% over comparable Q4-2009. Revenue from the pastes segment topped $20.0 million, up 13% over Q3-2010 and 105% over Q4-2009. Overall, quarterly revenue from operations grew up to $59.3 HK University Orders Aixtron million in Q4-2010, which represents sequential reactor for III/Vs on Silicon growth of 38% and annual growth of 241%. The MOCVD system will be used for research Oleg Kachalov, CEO of Monocrystal commented: on As/P/Sb based materials grown on silicon “We are very excited about our results that far substrates for electronics and photonics research surpassed the targets we set for 2010. Both our applications. core markets, LED and solar, have gone through significant expansion in the last year, and we Aixtron SE‘s Close Coupled Showerhead CRIUS were able to leverage our core competencies CCS reactor in the 6x2-inch (3x3-inch or 1x6- in technology and production to drive the new inch) wafer configuration, has been ordered by the strategy, add capacity and introduce innovative Hong Kong University of Science and Technology products to capitalise on these market opportunities (HKUST). for our growth.” The Hong Kong based institute placed the order “Our sound financial performance in 2010 was during the third quarter of 2010 and following driven by very strong demands for our products delivery in the first quarter of 2011, the systems from the LED and solar cell manufacturers. will be used for As/P/Sb based materials grown Increased ASPs and a shift in our product on silicon substrates for electronics and photonics mix towards selling more polished and larger research applications. Aixtron´s local support team diameter products for LED were accompanied will commission the new reactor in a dedicated by improvements on cost reduction, running our facility in the University’s Institute of Advanced sapphire production capacities at full steam and Study Lab and Department of Electronic and fostering close relationships with our customer Computer Engineering. base,” said Andrey Komkov, CFO of Monocrystal. Chair Professor Kei May Lau comments, “We have Although Q1-2011 has brought certain stability in had a close relationship with Aixtron for many years. pricing of sapphire products for LED, the demand This has helped foster a great understanding of remains strong. New innovative LED technologies the company’s technology expertise, processes that are coming to the market are expected to and procedures making it a very easy decision to speed up developments in the entire LED chain and select one of their reactors for our new projects. in the LED lighting in particular. The new reactor will be a vital resource for our further development of III/V growth on silicon Considering the looming possibility of more rapid wafers research. Its high temperature (>1,000° C) and wide adoption of LED lighting products by capability will be very important for this exploratory commercial and industrial clients, and also that work.” there is still an untapped opportunity and strong players in the backlighting, the LED market may “Prof. Kei May Lau of HKUST has always been embark on the quest to surf the next wave of its at the forefront of III/V Compound Semiconductor 56 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest device research and MOCVD technology. We are excited that Aixtron and its customers will be able to be a small part of this innovative project in the frame of a Demo Laboratory Agreement”, Christian Geng, Aixtron VP of Greater China, comments. “Professor Lau has been using various Aixtron MOCVD systems, such as single wafer and multiwafer reactors for Arsenides, Phosphides and Nitrides. This however will be the first time that Aixtron delivers a Close Coupled Showerhead system. The strong reputation that this reactor has earned over recent years is once again proving its Designed with retail spot and down lighting in mind, capability and versatility as a perfect match to the LUXEON S enables simple, effective, and efficient needs of heteroepitaxial research.” lighting. Retail lighting is intended to highlight the most important products, make merchandise stand out and shine, and create an environment that Lau is a Chair Professor of Electronic and Computer entices and comforts shoppers. The LUXEON S Engineering at HKUST. She joined the University supports all these objectives and reduces energy in year 2000 and established the Photonics consumption and costs. Technology Centre for R&D with a special emphasis on compound semiconductor materials and devices. “LUXEON S breaks new ground not just for Lumileds but for the entire LED industry,” said She is an IEEE Fellow and a Croucher Senior Frank Harder, VP Marketing LUXEON Product Research Fellow. Her group reported in the 2008 Lines. “The design of this product from the Thin IEDM metamorphic Al0.50In0.50As/Ga0.47In0.53As Film Flip Chip and Lumiramic phosphor to the tight 1.0 micron gatelength mHEMT grown in an Aixtron alignment between the 9 LED die in the package 200/4 system on silicon substrates with unity contribute to the colour performance, industry current gain cut-off frequency (fT) and maximum leading flux density, and punch unique to LUXEON oscillation frequency (fmax) of 37 and 55 GHz S. In addition, by hot testing at 85C and achieving respectively. High-speed InGaAs photodetectors Freedom From Binning, we continue to move closer grown on Si are also being developed. to the lighting industry in language and expectations for LUXEON performance.” Lumileds claims the colour quality and beam Lumileds LUXEON S Delivers uniformity from LUXEON S is unsurpassed by any other comparable LED available today. It’s the firm’s Punch & Colour Quality at firstFreedom From Binning LED, meaning that 1300 Lumens there are no colour bin selections to be made. The company hopes the LUXEON S will be the With a correlated colour temperature of 3000K and major replacement for halogen and CDM bulbs, a CRI >80, all LUXEON S emitters are targeted to offering better light, longer life, and higher efficacy. the black body curve and populate an area within a 3 step MacAdam Ellipse. The result is improved Philips Lumileds is debuting its LUXEON S LEDs uniformity and consistency within the light beam at the Strategies in Light and Euroshopconferences and between emitters. this week. The 1300 “hot” lumens LUXEON S delivers come At EuroShop, LUXEON S will be shown in Fortimo from a very small optical source that enables a 10° solutions from Philips long with other products beam from a compact reflector less than 50 mm in targeted at the retail and hospitality lighting diameter. In a retail spot or down light the result is segments. tight, sharp beams that deliver Punch (high centre beam intensity with beam uniformity and a crisp March 2011 www.compoundsemiconductor.net 57 news digest ♦ LEDs single shadow), that highlights and gives depth to ground-up with applications like these in mind, and objects that are being illuminated. its introduction signals the arrival of the LED lighting revolution in these high-profile markets.” LUXEON S is available immediately for prototyping and development from Philips Lumileds and Future The XLamp MT-G LED is the first in the industry binned and tested at 85 degrees C which can TV, male shaving and grooming, portable simplify luminaire design calculations and speed entertainment and oral healthcare. time-to-market. With a 9mm x 9mm footprint, the MT-G LED delivers up to 560 lumens at 1.1A at 85 C or up to 1525 lumens at 4A at 85 C in warm white (3000K). Cree Reveals XLamp MT-G LED with Unprecedented Samples are available immediately and production volumes are available with standard lead times. Performance The new design should enable customers to address high-output halogen retrofits for use in Market for LED Luminaires many applications such as retail stores, residential settings and tourist attractions. Over $3.8 Billion in 2010 Strategies Unlimited says that growth rates among applications vary, but the global market for LED Cree is marketing a new lighting-class LED luminaires is expected to grow to $8.3 billion by designed for high-output, small form-factor 2014. directional lighting applications. Rapid improvements in performance and price The XLamp MT-G LEDs are optimised for 35-50 of commercially available high brightness LED Watt halogen MR16 retrofit bulbs and other accent, packages, heightened awareness about energy track, display and down lighting used in retail efficiency, phasing out of incandescent bulbs, and stores, residential settings, museums, art galleries, fiscal stimulus undertaken globally have created hospitality and landscapes. Cree says these are conditions for adoption of white light application of the first commercial LEDs to deliver sufficient light LED technology, which otherwise would have faced output for these applications. the low-volume-high-cost conundrum. The multi-die XLamp MT-G LED features Cree Quality issues that affected the market penetration EasyWhite technology and deliver consistent of previous energy efficient lighting technologies colour in a small, highly efficient package. This continue to affect this market but the resolve to LED is designed for the high-lumen, small-footprint reduce energy consumption is likely to propel requirements of 35 and 50 Watt halogen retrofit this technology to be widely commercialised and lamps. Cree engaged driver, thermal and optic adopted by the market. providers to create an MR16 lamp reference design to further enable its LED customers to quickly The LED Luminaires, Market Analysis & Forecast address this market. includes nine LED lighting application segments and analysis for the period from 2008 to 2014. “To date, there are no energy-efficient alternatives for many high-lumen, small form-factor, directional Being the most efficient light source technology for lighting applications. Until now, LED-based MR16 applications requiring a directional beam of light lamps have been a tremendous challenge for the and batteries, consumer portable applications were lighting design community in terms of both light the largest segment of the LED luminaire market in output and colour consistency due to their small 2010. The quality of LEDs has improved to a point size and limited capacity for thermal management,” that performance is no longer an issue. The issue said Paul Thieken, Cree, director of marketing, LED now is the price of designing LEDs into luminaires. components. “Cree developed this LED from the 58 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest Colour and colour- changing application in on 6-inch sapphire substrates are beginning to architectural and entertainment applications approach 8-inch substrates as well. together had revenues more than $1 billion in 2010. Residential lighting, the fastest growing segment of “It took leading LED manufacturers three years the market, starting from a small base, is forecast to after the 6-inch sapphire substrates first became grow at a CAGR of 44% through 2014. available on the market to launch R&D on their use for LED production. The period was shorter for Global revenues for LED luminaires in commercial the 8-inch substrates – Monocrystal was the first and industrial applications are expected to be more to introduce and ship them to a MOCVD system than $1 billion in 2011. The outdoor area lighting manufacturer in August, 2008, and approximately applications, which benefitted from fiscal stimulus two years later, we have supplied our premium and the need for energy conservation, are expected 8-inch C-plane epi-ready sapphire substrates for to grow at a CAGR of 38% through 2014. Solar the R&D use at the forefront of LED manufacturing. powered lanterns will be a low margin-high volume The market dynamics in the LED space indicate a application assisted by NGOs and governments further shift toward the use of the larger diameter trying to save fuel subsidies. substrates, as well as the growing role of the suppliers, capable of meeting the high technology The revenues for this sub-segment are forecast to standards of the today’s LED market,” said Oleg grow at a CAGR of 58% for the same period. LED Kachalov, CEO of Monocrystal. exit signs have become a mature market in the U.S. and are in the initial stage of market penetration “Monocrystal has been supplying 8-inch sapphire in white light application in egress signage lighting substrates for the R&D on RFIC applications for the outside the U.S. China is the largest market as well last two years, and we have gained considerable as the largest supplier of LED luminaires. experience in large diameter sapphire substrates production. We are glad to be able now to support also our LED customers in making a technological breakthrough which will help bring forth the Monocrystal Advances into widespread use of the LED lighting,” added Mikhail the Land of 8-inch Sapphire Berest, VP Sales & Marketing of Monocrystal. Leading global LED manufacturers are moving towards 8” sapphire substrates to make their devices. Roled Recognises FLS Lumileds Powered LEDs Russian firm, Monocrystal, a manufacturer of electronic materials for LED and solar industries, Roled has awarded Future Lighting Solutions with is shipping its premium 8-inch C-plane epi-ready “Outstanding Supplier for 2010”. sapphire substrates to one of the world’s leading LED manufacturers. Roled Optoelectronics (Shanghai) Limited held its 2010 Supplier Summit for more than 100 In the past, LED industry players and experts companies that provide the support, services and have discussed the possibilities for the industry of supplies required for Roled’s growing business. employing larger than 2-inch sapphire substrates for LED production. The discussion revolved mainly Based on a stringent evaluation process, Roled around advantages and benefits of switching to presented the award for “Outstanding Supplier for 3- vs 4-inch substrates. Then, the use of 6-inch 2010” to Future Lighting Solutions. sapphire substrates appeared to be quite a remote prospect and any discussions of the 8-inch substrate opportunity became mostly a theoretical exercise. However, Monocrystal says the world’s leading manufacturers who are currently producing LEDs March 2011 www.compoundsemiconductor.net 59 news digest ♦ LEDs “Being selected as our Outstanding Supplier is substrates and products to the LED, RFIC, not an easy task and represents a tremendous Semiconductor, and Optical industries, has reported honour,” said Rock Hsuing, President of Roled financial results for its fourth quarter ended Optoelectronics. “The process is an extensive December 31, 2010. and complex process that includes a review of product quality, level of technical support, order Revenues for the quarter rose to $29.5 million, up and inventory management processes, post-sales 44 % sequentially and gross margin increased 9 service, and many others. Future Lighting Solutions percentage points sequentially to 63 %. Operating has proven their excellence in each of these areas margin was 50 % and diluted earnings per share and consistently strives to improve their service increased $0.29 sequentially to $0.64. process, quality, and support of Roled.” Commenting on the results, Raja Parvez, President Roled is a manufacturer of LED luminaires and and CEO said, “I am very pleased with the lighting products. The firm’s LED and LUXEON extraordinary finish to 2010 and look forward to based luminaires are widely used in the market and what we expect to be a very strong 2011.” consistently garner praise from customers. Roled’s turnover exceeded RMB100 million in 2010, with the completion of over 500 illumination projects. More than 80% of the luminaires installed by Roled use LUXEON LEDs for which Future Lighting Solutions provides engineering support and technical assistance in addition to supply chain services. “The results of the relationship between Roled The Company’s revenue increased 44 % and Future Lighting Solutions, like the Pearl River sequentially to $29.5 million in the current quarter project in Guangzhou, are testament to what can due to a combination of increased sales volume be accomplished with the right partnerships,” said made possible by the additional capacity from its Jamie Singerman, Corporate VP of Future Lighting two new manufacturing facilities and increased Solutions. pricing resulting from strong demand from the LED market. Future Lighting Solutions was formed a decade ago, to support the lighting industry in the The Company reported that its capacity expansion move from conventional analogue lighting to remains on schedule and also that there continues digital solid-state (LED) lighting. Future Lighting to be strong interest for its polished six inch wafers. Solutions partnered with the leading provider of Parvez continued, “Revenue from our 6 inch power LEDs, Philips Lumileds, and provides the polished wafers increased over 70 % sequentially technical expertise in optics, thermals, electrical, to $8.1 million in the fourth quarter. Demand for 6 and manufacturing needed for success in the LED inch wafers is increasing and we expect significant lighting market. growth in this product in the second half of this year as more LED chip manufacturers have announced their intention to move into production on 6 inch Rubicon Reports Record Q4 wafers later this year.” 2010 Results Commenting on the outlook for the first quarter of 2011, William Weissman, Rubicon’s CFO said, Revenue increased 44 % sequentially to $29.5 “We expect continued strong demand resulting million due to a combination of increased sales in revenue growing approximately 20 percent volume and increased pricing resulting from strong sequentially to between $34 million and $36 million. demand from the LED market. We expect substrate pricing in the first quarter to be consistent with fourth quarter pricing and we expect Rubicon Technology, a provider of sapphire 60 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest to continue adding capacity on-schedule at our two new facilities.” “Utilisation of newly added equipment and new hires will be lower in the first quarter, particularly in Malaysia, as we continue the qualification process with our customers. We anticipate gross margin, therefore, to be slightly lower in the first quarter but still in the high 50 % range. While we continue to have the benefit of net operating loss carry forwards for federal tax purposes, the Illinois State Legislature recently enacted changes to its tax code that, among other things, temporarily suspends the use of net operating loss carry forwards and The MEOST testing for SignalSure have been increases the corporate tax rate. “ developed in conjunction with the company’s tier 1 customers and have been exposed to extreme heat, “Consequently, we estimate a 7 % effective tax rate humidity, and high levels of sulphur gas. for the first quarter. Based on a projected diluted share count of 24 million shares, we expect after- Philips Lumileds simulates high-voltage jump start tax diluted earnings per share in the first quarter of and high voltage alternator failure to ensure that the between $0.62 and $0.65,” SignalSure LEDs will continue to operate without degradation in performance, quality, and light output. Lumileds Looking Positive “Reliability and confidence in a surface mount with LEDs for Automotive signalling product has been our design objective for SignalSure from the start,” said Paul Martin, Signalling Senior Director for Philips Lumileds’ mid-power automotive LEDs. “There are certainly other surface The firm says its SignalSure LEDs set new mount LEDs in use today, but it was clear that the standards for surface mount LED reliability and automotive industry’s needs were not being met.” robustness. “Only SignalSure achieves the automotive industry’s desired level of reliability for a surface mount Philips Lumileds has revealed its new surface product. No other automotive SMD product we mount SignalSure mid-power LEDs for automotive know of goes through the extreme testing applied signalling applications. to our LEDs and as a result, we are delivering a superior SMD with a wide design margin for The new LEDs are intended to be the most robust signalling applications,” he continued. and reliable surface mount LED available to the automotive industry today and have an undergone Philips Lumileds expects SignalSure to become a rigorous Multi Environment Overstress Testing the surface mount product of choice for a variety (MEOST) regime. of applications where thin, low profile designs are preferred, including centre stop, side-marker, tail, Available in red-orange and amber colours, the mirror turn, rear fog, and motorcycle signalling. company says the LEDs have passed tests exceeding today’s standards for automotive signalling LED sources. March 2011 www.compoundsemiconductor.net 61 news digest ♦ LEDs with a power input of only 48W. Osram Golden Dragon Plus LEDs Light up Kazan It is a scheme that is worthwhile in this project particularly by saving around two-thirds of their The Russian city of Kazan requires two-thirds less original energy requirement after only a short time energy thanks to Ledel’s efficient street lighting and far exceeds the goals of Russia’s energy powered by Osram LEDs. saving plans. Reducing Russia’s primary energy consumption by The city’s 500 streetlamps use Golden Dragon 40 % by 2020 is one of the country’s core concerns. Plus LEDs by Osram Opto Semiconductors. These LEDs have been developed specifically and meet To help reach this goal the Republic of Tatarstan the particular requirements for efficient lighting is tackling street lighting and has initiated a pilot solutions. They enable brighter and more evenly project in its capital Kazan – a ward with around spread lighting without scattered light or glare and 25,000 households already benefits from the with significantly lower power consumption. There superior light quality of LED street lighting made by is also the favourable colour-rendering index of the Ledel company. LED light sources – it provides a natural colour impression and improves safety by outlining the They have already installed 500 “Sveteco-48” surroundings more clearly. luminaires with energy-efficient Golden Dragon Plus LEDs made by Osram Opto Semiconductors. “Using LEDs is a sustainable solution for Kazan. With their long operating life and reduced maintenance costs compared with the previously installed sodium halide lamps the city is saving extra money and protecting the environment”, says Ledel CEO Artur Kogdaning. The investment will have paid for itself in about three years. But this is just the beginning. After these positive results Kazan is already planning to convert two other city wards to energy-efficient LED street lighting. “Osram Opto Semiconductors LEDs are the first choice solution for this job – their years of experience and understanding of street lighting requirements characterise our longstanding association”, continues Kogdaning. Street lighting with LED is not only in demand in Russia. Increasing numbers of German cities and towns recognise the energy-saving potential of LED lighting solutions – especially as their quite often out-dated public lighting has imposed high costs on regional and local government in Germany. Street lighting based on LED technology is the ideal According to the German-Russian Business alternative to conventional solutions for the switch, Association the Republic of Tatarstan west of the no matter how far east or west of the Volga it is. Urals is currently among the most active regions in the Russian Federation when it comes to government-imposed energy-saving initiatives. A project in ward 38 of the Novo-Savinsky district in Kazan, the million-strong city on the Volga, kicks off by replacing the out-dated 150W sodium halide lamps with new LED streetlamps produced by Ledel 62 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest The researchers compared the EQE and efficiency Electron Leakage can droop of the control sample (LED-1) to that of a improve Efficiency Droop sample with a 3.5-nm-thick undoped In0.25Ga0.75N test well inserted between the p-type Al0.1Ga0.9N A team from Chang Gung University says efficiency EBL and p-type GaN layer (LED-2). In order to droop is probably dominated by the injection improve the electron overflow into the test well, the efficiency of holes rather than electron leakage in p-type Al0.1Ga0.9N EBL was reduced to 5 nm. wide-well InGaN DH LEDs. Electron leakage can, in some cases, significantly improve efficiency droop in wide-well InGaN double-heterostructure (DH) LEDs according to researchers at the Chang Gung University, Taiwan. However, the peak external quantum efficiency (EQE) is decreased and the start point of efficiency drop shifts to a higher current density. The latest results are contrary to previous results which have indicated carrier leakage from multiple quantum wells (MQWs) can cause efficiency droop. The researchers also found that inserting an extra Mg-doped GaN/InGaN/GaN quantum well structure Fig 2. EQE of samples LED-1 and LED-2 as a on the p-side of the electron blocking layer data function of forward current density showed electron overflow. The EQE of the control sample reached a maximum Lin, a lead member of the team, commented when of 11% at 83.4 A/cm2, then, dropped rapidly to driving LEDs at a current density greater than 80 5.66% at 521 A/cm2. For LED-2, the EQE reached A/cm2, other than reduced Auger recombination, 7.96% at 208.6 A/cm2 and decreased monotonically the efficiency droop is probably dominated by the to 6.12% at 521 A/cm2. injection efficiency of holes rather than electron leakage in the wide-well InGaN DH LEDs. LED-1 exhibited a significant drop of 48.5% in EQE in the measurement range of 83.4 to 521 A/cm2, The team compared the performance of two while the EQE drop of LED-2 was only 23.1% in the LED structures (see Figure 1). The active region, same measurement range. identical in both LEDs, is shown in blue. The electron blocking layer (EBL) was 20nm thick p-type Chang said that the team will now focus on further Al0.1Ga0.9N. improving the injection efficiency of holes through optimisation of the structure of the p-type EBL. Further details of this work are published in the paper “Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes”, by Liann-Be Chang, Mu-Jen Lai, Ray- Ming Lin, and Chou-Hsiung Huang, Applied Physics Express 4 (2011) 012106 DOI: 10.1143/APEX.4.012106 Fig. 1 Schematic structures of control sample (LED-1) on the left and other sample (LED-2). March 2011 www.compoundsemiconductor.net 63 news digest ♦ LEDs LED Market Looks Epicrystal-Epistar JV to Light Overcrowded up with Aixtron Tools Several companies in the industry who specialise Aixtron will supply five AIX 2800G4 HT MOCVD in LED products have suffered significant selloffs systems for the production of ultra-high brightness already. (UHB) GaN-based LEDs to Epicrystal, a joint venture between Epistar and its customers. The light-emitting diode (LED) market has been on the upswing in recent years due to the rise in sales Aixtron SE has an order for MOCVD reactors from of consumer electronics products such as mobile an Epistar joint venture (JV), Epicrystal Corporation phones and television screens. (Changzhou), Ltd. in China. In addition, LEDs are on the verge of overtaking The company, formed as a new joint venture both incandescent and fluorescent light bulbs in between Epistar and Epistar’s customers, is terms of use as governments, businesses and engaged in the manufacture and distribution of consumers seek to curb emissions. The rise in LED LED-based products. popularity has led to an overcrowded industry and a sudden surge in government-backed Chinese LED The order is made up of five AIX 2800G4 HT makers has eaten into the market shares held by MOCVD systems. Following delivery in the second the likes of Cree and Veeco Instruments. quarter of 2011, the systems will be used for production of ultra-high brightness (UHB) GaN- The Bedford Report examines the outlook for based LEDs. companies in the semiconductor equipment and materials industry and provides research reports on The new reactors will be commissioned by the local Cree and Veeco Instruments. Aixtron support team working with a key technical team from Epistar at a new purpose-built facility in The first red light for US LED makers came in late China. 2010 when Citigroup downgraded Veeco. Citigroup analyst, Timothy M. Arcuri’s concern was that policy President Easy Hwang of Epicrystal comments, changes in China could lead to a significant falloff in “While we are a new company registered in China orders in 2011. According to research firm iSuppli, and in the first phase of our capacity expansion China will invest $10.5 billion in LED projects in the we rely on the excellent record with respect to next three years, and the nation’s annual market for device performance and yield obtainable from LEDs is expected to reach $7.08 billion in 2014, up Aixtron systems through Epistar. The proven from $4.37 billion in 2010. process compatibility and transferability from one Planetary MOCVD system to another will enable us Several companies in the industry who specialise to complete the ramp up of EpiCrystal’s production in LED products have suffered significant selloffs capacities in a very short time.” already. Cree proceeded to magnify concerns when its fiscal second quarter earnings missed “The Aixtron MOCVD systems clearly demonstrate consensus analyst estimates. For the company’s its competitiveness in terms of Cost of Ownership fiscal third quarter, Cree forecast EPS of 38 cents to and productivity. I’m confident that this partnership 45 cents. will help provide the tools we need as the characteristics of the AIX 2800G4 HT will ensure Veeco is more optimistic. For 2011, the company that our productivity goals will be met,” concludes projected a profit of more than $5 a share, versus Hwang. the Wall Street consensus of $4.96 a share, as provided by Thomson Reuters. For the financial year 2010, Veeco earned $4.42 per share, a substantial gain from 21 cents a share in the previous year. 64 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest installed at its new LED factory in Shanghai, China. Veeco’s TurboDisk Maintains Popularity in China with George Cherng, Chief Operating Officer of EnRayTek, commented, “We selected Veeco Epilight Order because of their excellent tool performance, MOCVD technology leadership, strong customer The K465i MOCVD systems will be installed in support, and commitment to the China marketplace. Epilight’s new HB-LED Fab in Hefei. Our facility is expected to be ready to begin to receive MOCVD tools in Q2, and we believe Veeco Veeco Instruments has announced that Shanghai will be the best partner to help get us up and Epilight Technology Co. Has placed a large multi- running and making high-quality LEDs fast.” tool order for itsTurboDisc K465i Metal Organic Chemical Vapour Deposition (MOCVD) systems William J. Miller, Executive VP, Veeco’s Compound during the fourth quarter of 2010. The equipment Semiconductor Business, commented, “We are is for Epilight’s new LED fab at Hefei, China for excited to win the EnRayTek business as we high-brightness light emitting diode (HB-LED) believe they have an excellent business plan, good manufacturing. financial backing and solid LED technology and personnel to meet their goal of becoming a major Wendi Liu, President of Epilight commented, “We provider of LEDs for TV backlighting. It is our goal installed a number of Veeco K465i tools in our to help EnRayTek to ramp to production capacity Shanghai factory in mid-2010 and have been quickly.” extremely pleased with their performance in our demanding high-volume LED production facility. According to Jim Jenson, VP of Marketing for Veeco We have therefore decided that Veeco equipment MOCVD, “Recent industry articles have forecasted should form the foundation of our next round of that revenues from LED-backlit LCD-TVs are capacity purchases for the Hefei Epilight fab.” expected to exceed those of CCFL-backlit models for the first time in China during 2011. EnRayTek is William J. Miller, Executive VP, Veeco’s Compound focused on capitalising on this trend.” Semiconductor Business, commented, “Epilight is one of the top LED makers in China and we are thrilled to be chosen for their latest capacity expansion.” ITRI Taiwan and Oxford Instruments to Collaborate EnRayTek Selects Veeco on HBLED Research Systems for Shanghai LED This will expand Oxford’s research capabilities so that the company can provide its process offering Factory more effectively to customers in Asia. The Veeco TurboDisc K465i MOCVD systems will Oxford Instruments and the Industrial Technology be installed at EnRayTek’s new LED factory in Research Institute in Taiwan (ITRI) have just signed Shanghai, China. a research-based collaboration agreement. Veeco Instruments has been selected as the The agreement is based on Oxford Instruments primary supplier of Metal Organic Chemical Vapour providing an HBLED related process research Deposition (MOCVD) systems by EnRayTek centre staffed by Oxford Instruments’ process Optoelectronics. engineers at ITRI, benefitting both ITRI and Oxford Instruments’ Far Eastern customer base. ITRI is EnRayTek is a new company established to make an applied research organisation working across LEDs for backlighting LED-TVs. During the fourth multiple industrial technology fields, and since quarter of 2010, EnRayTek placed initial orders for its inception in 1973, the organisation has been Veeco TurboDisc K465i MOCVD systems to be focussed on R&D related to industry, in order to March 2011 www.compoundsemiconductor.net 65 news digest ♦ LEDs improve domestic industrial technologies. achieve this goal.” Oxford Instruments will soon be installing several more systems in ITRI’s cleanroom facility. Oxford Instruments’ process engineers will have use of Veeco Unveils MaxBright this and selected other equipment at the Institute, LED MOCVD Multi-Reactor to provide process demonstrations and to support customers in the Far East in the performance System of their tools. This will in effect expand Oxford Instruments’ research capabilities so that the Veeco says the tool is industry’s highest productivity company can provide its process offering more platform for HB LED manufacturing. effectively to customers in Asia. Veeco Instruments has introduced its TurboDisc Oxford Instruments already has a number of MaxBright Gallium Nitride (GaN) Metal Organic systems installed at ITRI including a PlasmaProâ Chemical Vapor Deposition (MOCVD) multi-reactor System100 multi-chamber cluster tool incorporating system for the production of high-brightness light- PECVD, RIE and ALD, a PlasmaPro System100 emitting diodes (HB LEDs). ICP380 plasma etch tool and a PlasmaPro System80Plus PECVD plasma deposition tool, all MaxBright has already been accepted by a leading used for advancing research at the facility. LED manufacturer and Veeco is currently shipping MaxBright systems to additional top manufacturers Three further systems have been installed in the in Korea, Taiwan and China. dedicated Oxford Instruments Optoelectronics Laboratory, and these are a PlasmaProâ NGPâ1000 PECVD system, a PlasmaProâ NGPâ1000 Etch system, and a PlasmaPro System133 ICP380, with additional tools to follow in the next phase. VP of ITRI, Shing-Yuan Tsai comments: “In the materials chemical technology and nano technology fields, amongst others, ITRI collaborates with prominent industries in Taiwan and worldwide to develop and to promote the establishment of high- value industries and application of nanotechnology by traditional industries. Our collaboration with Oxford Instruments clearly shows that our research TurboDisc MaxBright GaN MOCVD Multi-Reactor expertise and facilities are among the best in the System (Photo: Business Wire) world, and we are certain the relationship between our two organisations will be mutually beneficial.” MaxBright leverages Veeco’s market-leading Uniform FlowFlange technology and automation Jeffrey Seah, Head of Asia Sales at Oxford expertise by combining multiple, new, high- Instruments Plasma Technology, is extremely throughput MOCVD reactors in a modular two- or positive about the collaboration: “As a global leader four-reactor cluster architecture. in systems and processes for etch, deposition and growth, Oxford Instruments has an established The MaxBright reactors, based on the K465i, relationship with ITRI, with equipment already feature both expanded wafer capacity and installed in their cleanroom. One of Oxford advanced, proprietary, closed-loop, thermal Instruments’ key objectives is to pursue responsible control technology. These reactors achieve 25% development and deeper understanding of the higher throughput than the standard K465i, while world through science and technology, and this extending proven performance advantages - collaboration with such a prestigious research uniformity, repeatability and material quality. institute is precisely the type of activity that will 66 www.compoundsemiconductor.net March 2011 LEDs ♦ news digest The MaxBright MOCVD system offers wafer ultraviolet AlGaN/AlN LEDs. This efficiency droop capacity of up to 216 x 2”, 56 x 4”, 24 x 6” or 12 x 8” is currently subject of intense research worldwide, wafers. In addition, seamless recipe transfer from as it delays general lighting applications of nitride K465i to MaxBright enables customers to achieve LEDs. rapid production start. Many proposals have been forwarded to explain According to William J. Miller, Executive VP of the efficiency droop (see review in [1]). One Veeco’s Compound Semiconductor Business, popular explanation is that the Auger recombination “MaxBright’s value proposition is clear: it’s the dominates the non-radiative loss at high injection highest productivity MOCVD system for HB LED current. Auger recombination is easy to understand manufacturing on the market. The architecture and model since its rate increases with the third enables single chamber or multi-chamber layer power of the carrier density, while the light-emission growth capability, increasing process flexibility for rate scales with the square of the density. As the demanding LED structures. MaxBright’s compact carrier density increases with higher current, the architecture also enables a footprint efficiency gain Auger process quickly overpowers the light emitting of up to 2.5 times standalone MOCVD systems. process, resulting in the efficiency droop. Overall, MaxBright delivers a 500% productivity gain compared to the K465i in a flexible and compact package.” John R. Peeler, Veeco’s CEO, added, “Veeco has dramatically accelerated our MOCVD technology investment and new product development programs to further reduce LED manufacturing costs. We are excited to launch this new, high productivity system as part of our multi-generational roadmap for improving MOCVD process capability and capital efficiency. MaxBright will enable the industry to Comparison of Auger recombination and accelerate its transition to LED lighting. In 2010, the electron leakage within an LED energy band K465i became the market-leading MOCVD system. diagram And now, MaxBright further extends Veeco’s product leadership position as the most productive Despite its simplicity and convenience, the Auger and lowest cost of ownership MOCVD tool on the droop model is not generally accepted. GaN- market.” based materials have wide bandgaps while the common Auger process is known to be strong only in semiconductors with a much narrower bandgap. The Auger droop model assumes an Auger New insight into the coefficient four orders of magnitude larger than predicted by text-book theories of the GaN Auger efficiency droop of GaN- process. based LEDs Researchers from the NUSOD Institute LLC Theorists argue that electron overflow, the primary (Newark, DE, USA) and Crosslight Software cause of LED droop, is sensitive to the properties of Inc. (Burnaby, BC, Canada) recently undertook the electron-blocking layerby Simon Li and Joachim investigations that shed new light on the origin Piprek of the LED efficiency droop phenomenon [2]. Using the advanced simulation software APSYS, The efficiency of most GaN-based LEDs decreases they studied another possible cause of the droop with higher injection current. Such a reduction phenomenon: electron overflow into the p-doped in LED efficiency is commonly referred to as the layers of the LED. LED efficiency droop. The droop phenomenon is universally observed across a broad wavelength Based on an earlier APSYS simulation study, spectrum of InGaN/GaN LEDs and also with electron leakage was first suggested in 2007 as March 2011 www.compoundsemiconductor.net 67 news digest ♦ LEDs possible origin of the efficiency droop [3]. The new study reveals how sensitive the electron overflow is With sophisticated simulation software and to the properties of the AlGaN electron blocker layer increasing computational power, researchers are (EBL) typically employed in nitride LEDs. Not only nowadays able to look beyond the symptoms of the is the EBL band gap of major importance but also droop and into the interplay of the different internal the EBL band offset. Assuming a reasonably small physical mechanisms, thereby moving towards the Auger coefficient, the new APSYS study shows that ultimate cure for the efficiency droop. an EBL band offset ratio of about 50:50 would make the electron leakage current large enough to fully account for the observed efficiency droop. The often References: assumed AlGaN band offset ratio of 70:30 does not [1] J. Piprek, Physica Status Solidi A 270, 2217 allow for significant overflow. As the exact offset is (Oct. 2010) hard to measure or calculate, a ratio of about 50:50 [2] J. Piprek and S. Li, Optical and Quantum seems quite reasonable. Electronics, Online First: www.springer.com (Feb. 2011) The electron overflow is more difficult to calculate [3] M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, than the Auger recombination as the former is E. F.Schubert, J. Piprek, Y. Park, Applied Physics influenced by the interplay between the built-in Letters 91, 183507 (Oct. 2007) polarization charges and the p-type doping in the [4] J. Zhang, Y. Sakai, and T. Egawa, IEEE Journal neighborhood of the EBL. The polarization interface of Quantum Electronics 46, 1854 (Dec. 2010) charge tends to reduce the electron barrier of the EBL while the ionized magnesium acceptors screen the interface charge, resulting in a strong influence of the EBL acceptor profile on the leakage current. Lumileds Introduces Surface However, the EBL acceptor profile is often not well controlled during the epitaxial LED growth process, Mount LEDs for Automotive which may be the reason for some confusing droop Signalling observations reported in the literature [1]. The firm says its SignalSure modules set new The new APSYS simulation study also reveals standards for surface mount LED reliability. a quite abnormal thermal behavior: the electron overflow decreases with higher temperature. This Philips Lumileds has introduced its new SignalSure is a surprising prediction since most semiconductor mid-power LEDs for automotive signalling devices ranging from transistors to laser diodes applications. perform better at lower temperatures while higher temperature usually causes undesirable power The new surface mount LED is intended to be losses. The reason behind this droop abnormality the most robust and reliable surface mount is that the hole transport improves at higher LED available to the automotive industry today. temperatures, leading to reduced electron overflow. The modules have undergone a rigorous Multi Environment Overstress Testing (MEOST) regime So, can this surprising temperature abnormality that exceeds the testing required by today’s be observed experimentally? Yes indeed! In an standards for automotive signalling LED sources. independent experimental study, a team from Nagoya Institute of Technology (Japan) recently published electroluminescence measurements on 264 nm AlGaN LEDs [4]. The Nagoya team not only found direct evidence for the electron overflow, they also observed that the amount of leakage decreases with increasing temperature. These measurements serve as an impressive confirmation of the overflow model for the efficiency droop; however, other mechanisms may still be involved [1]. 68 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest SignalSure is available in red-orange and amber colours. Lumileds says that the MEOST testing for SignalSure goes well beyond datasheet maximums Telecoms to ensure ongoing reliability and performance. As part of the MEOST testing regime, developed in conjunction with the company’s primary customers, Emblation Microwave’s GaN- SignalSure LEDs are exposed to extreme heat, on-SiC Amplifier is Cool & humidity, and high levels of sulphur gas. Compact Philips Lumileds simulated high-voltage jump start and high voltage alternator failure to ensure that The source delivers more than 100 W CW At 2.45 the SignalSure LEDs would continue to operate GHz and offers excellent reflection measurement. without degradation in performance, quality, and The GaN transistor grown on SiC substrates light output. achieves better than 62% efficiency. “Reliability and confidence in a surface mount Emblation Microwave has introduced its new signalling product has been our design objective for ISYS245 microwave generator for commercial, SignalSure from the start,” said Paul Martin, Senior industrial, research, and test applications requiring Director for Philips Lumileds’ mid-power automotive a high-power microwave source. LEDs. The compact source generates more than 100 W “There are certainly other surface mount LEDs CW output power at 2.45 GHz. It stays cool via in use today, but it was clear that the automotive highly efficient, solid-state technology and replaces industry’s needs were not being met. Only much larger magnetron and travelling-wave-tube- SignalSure achieves the automotive industry’s amplifier systems. It provides clean microwave desired level of reliability for a surface mount output power that can be adjusted by means of product. No other automotive SMD product we a straightforward user interface or under remote know of goes through the extreme testing applied control with a PC. to our LEDs and as a result, we are delivering a superior SMD with a wide design margin for signalling applications,” he concluded. Philips Lumileds expects SignalSure to become the surface mount product of choice for a variety of applications where thin, low profile designs are preferred, including centre stop, side-marker, tail, mirror turn, rear fog, and motorcycle signalling. The ISYS245 is a full microwave system in a compact housing measuring 11.8 x 2.2 x 10.8 in. (300 x 85 x 275 mm). It includes a low-noise voltage-controlled oscillator (VCO), high-power transistor amplifier, and control and monitoring circuitry. The four-stage solid-state power amplifier (SSPA) is based on state-of-the-art technology, using March 2011 www.compoundsemiconductor.net 69 news digest ♦ Telecoms gallium-nitride (GaN) transistors on silicon-carbide modifications.” (SiC) substrates for effective thermal management. The amplifier, which is biased for Class AB mode The ISYS245 is a low-cost, light-weight solution operation, achieves better than 62% efficiency. for applications requiring high levels of microwave power, such as in plasma physics, microwave In addition to providing high-power signals, the chemistry (to speed reaction times), food model ISYS245 can boost signals from an external processing, curing, material analysis, material source, such as a signal generator. As a stand- heating and drying, and in general measurement alone SSPA, it delivers small-signal gain from 55 applications. to 58 dB at 2.45 GHz. In swept mode, the output power can be varied from 0 to 100 W in 5-W It employs pulse-width modulation (PWM) increments. techniques to maintain power within 5% of a selected value, even over temperature. The The model ISYS245’s GaN amplifier provides ISYS245 runs on 100 to 240 VAC, 50/60 Hz. The as much as +51 dBm (110 W) saturated output FCC-compliant high-power microwave source power at 2.45 GHz, available at a female Type meets CE mark certification as well as UL 61010 N connector. It delivers a wide dynamic range and IEC 61010 product safety standards in the US, compared to tube amplifiers, with a noise figure UK, and Canada. of less than 10 dB and output third-order intercept point (OIP3) of +56 to +58 dBm. When working as a stand-alone amplifier, the ISYS245 handles maximum input levels of +15 dBm from external Optical fibre with compound signal sources. semiconductor core revealed The ISYS245 microwave generator is easy to use. It features a simple-to-navigate front panel, with the Penn State University has developed, what it capability of enabling or disabling RF output power claims, is the first new type of optical fibre that at the push of a button. Power can also be disabled contains, at its core, a high-purity crystalline by means of a timer with a 99-minute range. The compound of zinc selenide (ZnSe). ISYS245 includes a simple parallel communications interface for external control and data logging with a A team of scientists led by John Badding, a PC, and is available with an optional USB interface professor of chemistry at Penn State University, module for use with USB-equipped computers. A has developed the new class of optical fibre, which variety of LEDs and audible alarms warn when RF allows for a more effective and liberal manipulation power is enabled and of severe load mismatches of light. The discovery opens up possibilities to a and excessive reflected power conditions. more versatile laser-radar technology. The ISYS245 incorporates an innovative reflected- ZnSe is a highly efficient light-yellow II-VI power measurement system that delivers compound semiconductor with superior optical and outstanding accuracy when used in swept mode. electronic properties. For example, when working with a device under test (DUT) that presents a poor impedance match (high return loss) to the output of the ISYS245, the reflected-power measurement system can significantly reduce errors and measurement uncertainty. For certain applications, such as analysis of material properties, good reflected- power measurement accuracy is essential. Although the ISYS245 is available as a standard product, Emblation Microwave’s CEO, Gary Beale, commented, “In the end, we will design any type of system that our customer requires. Our modular design allows for fast and economical 70 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest Such technology could be applied to the frequency conversion, is more capable of changing development of improved surgical and medical colours.” lasers, better countermeasure lasers used by the military, and superior environment-sensing lasers Second, as Badding and his team expected, they such as those used to measure pollutants and to found that the new class of fibre provided more detect the dissemination of bioterrorist chemical versatility not just in the visible spectrum, but also agents. The team’s research will be published in the in the infrared; electromagnetic radiation with journal Advanced Materials. wavelengths longer than those of visible light. “It has become almost a cliché to say that optical Existing optical-fibre technology is inefficient at fibres are the cornerstone of the modern information transmitting infrared light. However, the ZnSe age,” said Badding. “These long, thin fibres, which optical fibres that Badding’s team developed are are three times as thick as a human hair, can able to transmit the longer wavelengths of infrared transmit more than a terabyte, the equivalent of 250 light. DVDs , of information per second. Still, there always are ways to improve on existing technology.” “Exploiting these wavelengths is exciting because it represents a step toward making fibres that can Badding explained that optical-fibre technology serve as infrared lasers,” Badding explained. “For always has been limited by the use of a glass core. example, the military currently uses laser-radar “Glass has a haphazard arrangement of atoms,” he technology that can handle the near-infrared, or 2 said. “In contrast, a crystalline substance like zinc to 2.5-micron range. A device capable of handling selenide is highly ordered. That order allows light to the mid-infrared, or over 5-micron range would be be transported over longer wavelengths, specifically more accurate. The fibres we created can transmit those in the mid-infrared.” wavelengths of up to 15 microns.” Unlike silica glass, which traditionally is used Badding also explained that the detection of in optical fibres, ZnSe is a II-VI compound pollutants and environmental toxins could be semiconductor. “We’ve known for a long time that yet another application of better laser-radar zinc selenide is a useful compound, capable of technology capable of interacting with light of longer manipulating light in ways that silica can’t,” Badding wavelengths. said. “The trick was to get this compound into a fibre structure, something that had never been done “Different molecules absorb light of different before.” wavelengths; for example, water absorbs, or stops, light at the wavelengths of 2.6 microns,” Badding Using an innovative high-pressure chemical- said. “But the molecules of certain pollutants or deposition technique developed by Justin Sparks, other toxic substances may absorb light of much a graduate student in the Department of Chemistry, longer wavelengths. If we can transport light over Badding and his team deposited ZnSe waveguiding longer wavelengths through the atmosphere, we cores inside of silica glass capillaries to form the can see what substances are out there much more new class of optical fibres. “The high-pressure clearly.” deposition is unique in allowing formation of such long, thin, zinc selenide fibre cores in a very In addition, Badding mentioned that ZnSe optical confined space,” Badding said. fibres also may open new avenues of research that could improve laser-assisted surgical techniques, The scientists found that the optical fibres made such as corrective eye surgery. of ZnSe could be useful in two ways. First, they observed that the new fibres were more efficient at In addition to Badding and Sparks, other converting light from one colour to another. researchers who contributed to this study include Rongrui He of Penn State’s Department of “When traditional optical fibres are used for Chemistry and the Materials Research Institute; signs, displays, and art, it’s not always possible Mahesh Krishnamurthi and Venkatraman Gopalan to get the colours you want,” Badding explained. of Penn State’s Department of Materials Science “Zinc selenide, using a process called nonlinear and Engineering and the Materials Research March 2011 www.compoundsemiconductor.net 71 news digest ♦ Telecoms Institute; and Pier J.A. Sazio, Anna C. Peacock, and leader in enterprise mobile computing, to jointly Noel Healy of the Optoelectronics Research Centre develop a ruggedized industrial-grade Golden-i at the University of Southampton. product. By providing instant mobile access to digital information, Golden-i is a disruptive product Support for this research was provided by the we believe has the potential to set a new standard Engineering and Physical Sciences Research for enhanced operational efficiency and productivity Council, the National Science Foundation, and in an industrial environment with an addressable the Penn State Materials Research Science and market in the billions of dollars. The program Engineering Centre. remains on schedule.” Fourth-Quarter Operating Results Kopin Yearly Incomes Gross margin for the fourth quarter of 2010 grew Plummet by over 50% to 34.6 % from 30.8 % of product revenues for the same period of 2009, reflecting an increase in sales Annual net income for 2010 was $ 8.9 million as of higher margin products in the 2010 period. compared to $ 19.4 million in 2009. Net income was $4.7 million, or $0.07 per diluted Kopin, a supplier of microdisplays for mobile share, for the fourth quarter of 2010, compared with applications including smartphones, tablet PCs, $5.3 million, or $0.08 per diluted share, for same military thermal weapons sights and wearable period of 2009. Fourth-quarter 2010 results include computers, has announced financial results for the the receipt of $1.4 million of insurance proceeds three and 12 months ended December 25, 2010. and $0.6 million from the sale of patents the Company was no longer using. “Paced by a strong year for our III-V product line, which increased more than 30 percent from 2009, we achieved total revenues of $120 million,” said Kopin President and CEO, John C.C. Fan. “The strong demand for smartphones expected in 2011, as well as the increasing complexity of the front-end components required for high voice and data speeds necessary to efficiently operate these devices, are significant trends that favour our proprietary III-V technology and world-class manufacturing expertise. Consequently, we expect 2011 to be another year of solid revenue growth for our III-V products.” “Within our CyberDisplay portfolio, military display Gross margin was 29.9 and 29.7 % of product sales started the year slowly but finished strongly revenues for the 12 months ended December 25, in the fourth quarter,” Fan said. “Our commercial 2010, and December 26, 2009, respectively. display product line saw sales momentum throughout the year driven by the consumer For the fiscal year ended December 25, 2010, electronics market.” Kopin reported net income of $8.9 million, or $0.13 per diluted share, compared with net income of “We made several significant strides in 2010 $19.4 million, or $0.29 per diluted share, for the toward commercialization of Golden-i, our new period ended December 26, 2009. voice-activated, hands-free, cloud computing and communications solution for the industrial market,” Fan continued. “In the fourth quarter we announced a key partnership with Motorola Solutions, the world- 72 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest milestones are reached within one year of the acquisition date. Kopin expects the FDD acquisition to be accretive to its 2011 results of operations. Business Outlook “We expect another year of solid top-line growth for Kopin in 2011,” Fan said. “We expect continued strong growth in smartphones, which should fuel a good year for our III-V products. While we continue to expect the U.S. Army’s Thermal Weapons Sight program to contribute materially to our display The year-over-year comparison of net income is revenue in 2011, we do have some reservations affected by several items in the full-year 2010 and about the federal budget deficit impact.” 2009 periods. 2010 results include gains of $0.8 million, compared with $6.3 million in 2009, on the “We also expect our commercial display sales to sale of patents that the Company was no longer grow. And perhaps most importantly, we expect using. 2010 results also include the receipt of $1.8 to offer Golden-i development kits in the second million of insurance proceeds and $2.6 million from quarter of 2011 to select customers and software the sale of investments. application developers. They will provide feedback and develop application software for a ruggedized 2009 results include a $1.2 million gain on the Golden-i product for general availability in the repayment of loans to KTC previously written- first half of 2012. For full-year 2011, we expect off; and $0.6 million representing the gain on to continue to grow and generate total revenues remeasurement of Kopin’s investment in KTC to its in the range of $130 million to $140 million,” he fair market value immediately prior to the purchase concluded. of the additional shares by the Company in 2009, partially offset by a $0.9 million expense from an In conjunction with its fourth-quarter 2010 financial impairment of certain marketable debt securities, results, Kopin hosted a teleconference call for which were deemed other-than-temporarily investors and analysts . impaired. The call can be accessed as an archived audio For the year ended December 25, 2010 the webcast on the “Investors” section of the Kopin Company generated $15.1 million of cash from website, www.kopin.com. operating activities and spent $17.2 million for capital expenditures and $6.7 million for the repurchase of stock. Cash and marketable securities totalled $111 million at December 25, Opel Announces Third 2010, compared with $114.5 million at December Party Valuation of its POET 26, 2009. The Company had no long-term debt. Technology Acquisition of Forth Dimension Displays The technology, which makes it possible to In January 2011, Kopin acquired Scotland-based monolithically integrate a wide number of electronic Forth Dimension Displays Ltd. (FDD), a provider and optoelectronic functions onto a single GaAs of all-digital, ultra-high-resolution, ferroelectric chip, is estimated to be worth over $1 billion. reflective microdisplays. FDD’s full-colour, world- leading image quality display technology is used Opel Solar International is in receipt of a third party extensively across a range of applications, including valuation of intellectual property developed by its high-performance cinematography, training and U.S. affiliates Opel, and Odis. simulation, 3D metrology and medical imaging. Total consideration was approximately $11 million The Planar Opto Electronic Technology (“POET”), in cash plus an earnout provision if certain revenue initially developed by Geoffrey Taylor at the March 2011 www.compoundsemiconductor.net 73 news digest ♦ Telecoms University of Connecticut and licensed to Opel, is a rate analysis to determine what the market may semiconductor fabrication technology that enables bear as a reasonable royalty rate for the exclusive the dense packing of digital, analogue, and optical use of the POET Technology. They developed a circuits on to a single gallium arsenide chip. risk-adjusted discount rate to discount forecast future free cash flows to determine a nominal value The technology now makes it possible to indication as of the appraisal’s effective date. monolithically integrate a wide number of electronic and optoelectronic functions in a single chip with To account for the uncertainty inherent in the higher speeds and reduced power consumption valuation process, Pellegrino & Associates captured compared to Silicon CMOS. the complex model interactions in the face of uncertain estimating assumptions using Monte For the same functionality, the chip size would be Carlo simulation techniques. This did not constrain considerably reduced to approximately the size of the valuation model to any single value predictions half a person’s thumb nail. Opel commissioned a of key values such as royalty rates or costs. The valuation analysis of the POET Technology portfolio firm then programmed the valuation model to (“POET Technology”) by an independent, third party recalculate repeatedly to create a distribution of valuation firm, Pellegrino & Associates. outcomes. Pellegrino & Associates used the range of values calculated by the model to come to a final The Pellegrino firm performed an analysis of the determination. uses of the POET Technology, the sales it could achieve in its targeted end-markets and likely In complex situations that involve uncertainty, margins if Opel can complete its research and this methodology helps to generate meaningful development activities successfully and the market estimates that would otherwise be impossible adopts the POET Technology. to model using discrete methods such as best-, expected-, and worst-case modelling. Pellegrino Using a number of valuation techniques and based & Associates used the median value from this on technical information provided to it by the simulation process as the fair market value for the Company, the valuation firm has estimated that the POET Technology. POET Technology portfolio could be worth as much as approximately $1 billion. This worth is derived from a range of values; the median value being CyOptics Introduces $966.6 Receivers for 40 & and million, while the mean valuation was reported at 100Gbps Coherent Systems $1.31 billion. The compact PM-QPSK InP devices integrate Using the income approach to value, Pellegrino two matched 90° optical hybrids, four high speed & Associates, LLC built a valuation model to balanced detector pairs and four differential linear determine the economic income that might be TIAs with manual and automatic gain control. possible from the potential exploitation of the POET Technology in several prospective markets. CyOptics, a manufacturer of Indium Phosphide (InP) optical chip and component technologies, Pellegrino & Associates, used market data, has announced the availability of its 40Gbps and revenue projections, investment data, and cost 100Gbps Polarisation-Multiplexed Quadrature data as from various sources, including from Phase-Shift-Keying (PM-QPSK) Integrated Odis representatives, to determine the economic Coherent Receivers. income attributable solely to the POET Technology. Pellegrino & Associates then integrated the For use in 40G and 100G coherent DWDM information into a valuation model, accounting for transmission systems, these optical receivers the economic life of the POET Technology. expand CyOptics’ growing portfolio of component solutions leveraging monolithic and hybrid Photonic Pellegrino & Associates, LLC performed a royalty Integrated Circuits (PICs). 74 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest The RX-PMQPSK-40 (40Gbps) and RX- The new mini-SFP+ (mSFP) AFBR-54D7APZ PMQPSK-100 (100Gbps) Coherent Receivers transceiver addresses 8-Gbps Fibre Channel integrate two matched 90° optical hybrids, four high for storage applications and the AFBR-703SNZ speed balanced detector pairs and four differential transceiver targets next-generation 10-Gbps linear TIAs with manual and automatic gain control. Ethernet equipment designs. Both pluggable modules increase port density by 30 % over The very compact surface-mount package of 40mm industry-standard SFP+ transceivers, while length and less than 7mm height also integrates the delivering the same data-transmission performance. polarisation splitters for signal and local oscillator. The receivers make use of CyOptics’ extensive The mSFP transceivers incorporate Avago 850-nm portfolio of high speed InP based balanced photo- Vertical-Cavity Surface Emitting Laser (VCSEL) and detectors (PDs) and Silica Planar Lightguide Circuit PIN detector technology, which insures the AFBR- (PLC) device technology for the 90° hybrid mixers. 54D7APZ module is compliant with 8.5/4.25/2.125 GBd Fibre Channel specifications and the AFBR- They also leverage the firms’ automated precision- 703SNZ module complies with IEEE 802.3ae robotic integration platform for mounting the 10GBASE-SR standards. balanced PDs directly onto the PLC chip to provide a highly integrated optical sub-assembly with The devices use the SFP+ electrical connector and high performance in a very small footprint. The I2C interface, and are compliant with the Small Receivers adhere to the Optical Internetworking Form Pluggable (SFP) Multi Source Agreement Forum Implementation Agreement. (MSA) electrical specifications for duplex transceivers. The mSFP modules are designed “Our new 40G and 100G coherent Receivers for low power consumption with typical dissipation address the needs for very compact component of 0.6W. Avago will demonstrate the mSFP solutions of Transponder and line card transceivers, in addition to other high-speed optical manufacturers alike,” said Stefan Rochus, VP fibre solutions, at the 2011 Optical Fibre Conference of Marketing and Business Development at in booth # 2001 at the Los Angeles Convention CyOptics. “CyOptics is uniquely positioned to Centre from March 8-10. combine all of the critical InP and PLC device technologies together with our automated high “Avago is committed to innovating and partnering precision manufacturing platform to deliver a with customers to expand our leadership position high performance and low cost coherent receiver in 8- and 10-Gbps SFP+ transceivers,” said Victor solution.” Krutul, director of marketing for the Fibre Optics Products Division at Avago. CyOptics is ramping production for both the 40G and 100G receiver now and anticipates general “These new mSFP modules enable our customers availability in June 2011. to develop more efficient storage and Ethernet equipment with higher port density, and we are getting positive feedback from our lead customers.” Avago recently exhibited a high-density DCX Avago Introduces mini-SFP+ Backbone modular switch from Brocade that Optical Transceivers leverages the mSFP technology for 64 ports in a switching blade that could only house 48 SFP+ The mSFP transceivers incorporate Avago’s 850nm ports. Vertical-Cavity Surface Emitting Laser (VCSEL) and PIN detector technology and will increase port Avago has teamed with multiple cage and cable density for storage and ethernet equipment. suppliers to provide complete 8-Gbps Fibre Channel and 10-Gbps Ethernet mSFP solutions. Avago Technologies, a supplier of analogue Avago optical transceivers offer unparalleled interface components for communications, industrial reliability, with not a single VCSEL failure in the and consumer applications, has revealed two new millions of 8-Gbps and 10-Gbps modules the fibre-optic transceivers. company has shipped to date. March 2011 www.compoundsemiconductor.net 75 news digest ♦ Telecoms Additional AFBR-54D7APZ and AFBR-703SNZ Chips based on SiGe feature faster NPN transistors Product Features and target integration levels unseen in any other high-frequency Silicon bipolar technology. * AFBR-54D7APZ achieves data rates of 8.5 Gbps for up to 150 meters using OM3 fibre and AFBR- The chips-set, a transmitter and receiver, include 703SNZ achieves data rates of 10 Gbps for up to all required circuitry such as frequency multipliers, 300 metres using OM3 fibre harmonic mixers, power amplifiers, on-chip * Enhanced EMI performance for high port density antennas, and run from a 18GHz frequency applications reference. The circuits operate their transistors * RoHS compliant and IEC 60825-1 Class 1/CDRH sub-harmonically and expand their application Class 1 laser eye safe beyond their cut-off frequency. Overall, this * Wide temperature and supply voltage operation demonstrates the “highest frequency of operation in (-10 to 80° C) (3.3V ± 10%) the SiGe history.” * Full real-time digital diagnostic monitoring The Avago 8-Gbps AFBR-54D7APZ and 10-Gbps AFBR-703SNZ mini-SFP optical transceivers are priced at $120 and $180 each, respectively, in minimum quantities of 10. Samples and production quantities are available now through the Avago direct sales channel and via worldwide distribution partners. Fig. 1 Chip micrographs of a fully-integrated SiGe chip-set for THz imaging applications, to DOTFIVE Demonstrates be presented at the 2011 ISSCC. Si-Ge HBTs with Highest The chips include some of the latest cutting- Operation Frequency edge process technologies and focus on novel applications for Silicon technologies, said Erik The highly integrated DOTFIVE chips-set includes Öjefors, circuit designer at the University of all required circuitry and the technology could be a Wuppertal, Germany. The DOTFIVE Project´s key driver in the THz imaging, security, medical and transistors are not only designed for high-frequency scientific markets. applications, but also enable lower power applications and better noise performance at lower The European funded project DOTFIVE frequencies. The technology could also be a key (Framework Program FP 7) is providing details of its driver for novel applications in a variety of emerging latest high-speed circuits at ISSCC conference this applications in the security, medical and scientific week. area. DOTFIVE design teams make use of cutting-edge Silicon-Germanium process technologies developed in Europe. The technology is suitable for future THz imaging, radar, or communication applications. Over the last 3 years, the DOTFIVE consortium has established a leadership position for the European semiconductor industry in the area of SiGe HBTs (Silicon-Germanium Heterojunction Bipolar Transistors) for millimetre wave applications, with contributions from semiconductor manufacturers like STMicroelectronics, Infineon, IHP and Imec. 76 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest Fig. 2 Visual images (top) and THz images (below) of objects screened at 0.82 THz. The Advanced Photonix Will Not images were captured with an integrated Silicon Comment on Unusual Market solution; no expensive THz equipment was required. Activity Prior to ISSCC the latest DOTFIVE technology With a jump in share price of over 23% from 16th to achievements were presented by IHP at the IEDM 17th Feb, over 2 million shares were traded. meeting in San Francisco, California, in December 2010. The technology feature fmax=500GHz HBT In view of the unusual market activity in the transistors and has reached ring-oscillator gate common stock of Advanced Photonix on February delays as low as 2.0ps, a new world record for SiGe 17, 2011, the NYSE contacted the company in said Bernd Heinemann, IHP GmbH, Germany. accordance with its usual practice. Designers and technologists of STMicroelectronics The company stated that it was company policy not and the University of Wuppertal were recognised to comment on unusual market activity. The share when being awarded the 40th EuMC Microwave price jumped by over 23% from $2.13 on 16 Feb to Prize, in Paris in September 2010, a prize given $2.63 on 17 Feb 2011 when over 2 million shares since 1977 for the best contributed paper to the were traded. European Microwave Conference. The paper was presented by E. Öjefors, F. Pourchon, P. Chevalier, and U.R. Pfeiffer, for their work “A 160-GHz Low- Noise Downconverter in a SiGe HBT Technology”. Leading edge DOTFIVE circuits, fabricated by Infineon, were also presented at the 2010 BiPolar/ BiCMOS Circuits and Technology Meeting (BCTM) in Austin Texas, (4-6 October 2010). The static frequency dividers presented by Infineon, showed record operation at 133-GHz and such circuits play a key role in any communication and radar system. Advanced Photonix is a vertically integrated optoelectronic semiconductor manufacturer of optoelectronic solutions, high-speed optical receivers and terahertz instrumentation to a global OEM customer base. Products include patented indium phosphide (InP) and gallium arsinide (GaAs) based APD, PIN, and FILTRODE photodetectors; Fig. 3 Further DOTFIVE record circuits include high-speed optical receivers; and the T-Ray 4000 133GHz static frequency divider (a), and 160GHz THz product platform. communication receiver (b). The circuits were presented by Infineon and STMicroelectronics at the BCTM 2010 and the EuMC 2010 conference respectively. March 2011 www.compoundsemiconductor.net 77 news digest ♦ Telecoms pins for shutdown and low power mode and has Avago Enables WiMAX to +25 dBm linear output power. With 2.5% error Coexist with Portable Radios vector magnitude (EVM) and 16 QAM WiMAX modulation at +25 dBm, the device is claimed to be The firm’s small-footprint GaAs based PAs exhibit stable under all loads and conditions. It can operate high efficiency and high linear output power for between -40 and 85°C. handsets, tablets and USB dongle applications. The MGA-22103 linear power amplifiers are priced Avago Technologies has revealed a new linear at $2.20 each in 10,000 piece quantities. Samples power amplifier (PA) module for mobile and fixed and production quantities are available now through wireless data WiMAX applications that include WiFi the Avago direct sales channel and via worldwide and other cellular radios. distribution partners. The module is available as part of the Sequans SQN1210 reference design for USB dongles. Skyworks Awards TowerJazz for Third Consecutive Year The firm has been awarded “Best Foundry Supplier” for its excellence in quality and performance and for its alignment with Skyworks’ supply chain The new MGA-22103 module features an requirements. aggressive gain shape that limits the noise injected into radio receivers co-located in the same device, TowerJazz, the global specialty foundry supplier, enabling WiMAX to coexist with WiFi, GPS, PCS has received the 2010 Foundry Supplier of the Year and other radios in handsets, tablets, USB dongles Award from Skyworks. and other portable electronics. This award was granted to TowerJazz for the third The MGA-22103 linear power amplifier is cost- consecutive year in recognition of its excellent effective and meets industry-standard Spectral quality, performance and solid alignment with Emission Mask (SEM) tests operating at 3.3V. Skyworks’ supply chain requirements. Covering a frequency range of 2.5 to 2.7 GHz, the PA includes fully integrated RF matching. These Skyworks, a TowerJazz customer since 2002, features are integrated in a compact 3 mm by utilises a broad set of the foundry’s specialty 3 mm by 1 mm package, allowing designers to process offerings including mixed-signal CMOS, achieve standards-compliant performance in space- RFCMOS, BiCMOS and SiGe BiCMOS, to constrained designs. develop a wide range of Skyworks’ products such as transmit/receive modules, power amplifier Leveraging Avago’s proprietary GaAs controllers, switch controllers, linear devices, and enhancement-mode pHEMT technology, the MGA- wireless LAN solutions. 22103 module can be used for most high-linearity applications. “We congratulate TowerJazz on winning our Foundry Supplier of the Year Award for the third The MGA-22103 module meets the IEEE 802.16 year in a row,” said Bruce J. Freyman, senior WiMAX mask at over 25 dBm power, with a high VP of worldwide operations at Skyworks. “This gain of 35 dB across the band. Additionally, a low accomplishment demonstrates TowerJazz’s proven power mode allows operation at approximately 80 track record in delivering high quality technology mA when only minimal power is required. and design enablement services as well as in consistently meeting our supply chain requirements The module is integrated CMOS compatible with year after year.” 78 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest “We are pleased to again receive this award from Anwar continued, “While revenues losses were not Skyworks. Recognition from one of our major long- reversed in 2010, companies in general managed to time customers demonstrates our commitment to slow some growth. Profit margins returned to more our partnerships to not just meet, but rather, exceed traditional levels of four to six percent.” expectations,” said David Postula, TowerJazz VP of Sales. “This award is evidence of our success “Challenges remain for the industry in 2011, in creating value for our customers through our compounded by political inaction,” noted Eric service and support. We appreciate the confidence Higham of Strategy Analytics. “Nevertheless, while Skyworks has in our proven technology platforms we do not expect anything spectacular in terms of for manufacturing their leading-edge devices.” growth, we believe that the industry will retain an upward growth trajectory this year.” Global Defence Industry Skyworks Expands Family Stabilises in 2010 of GaAs Antenna Switch While revenues losses were not reversed in 2010, companies in general managed to slow some Modules growth. Profit margins returned to more traditional Supporting smart phones, tablets and datacards, levels of four to six percent. the new products address size, cost and performance requirements for new markets and As the financial crisis hit home, defence platforms. departments have also had to take a long hard look at expenditure. Skyworks Solutions, an innovator of high-reliability analogue and mixed signal semiconductors The impact of these decisions started to hit enabling a broad range of end markets, has the defence industry in 2009, when revenues introduced a new family of antenna switch modules dropped 11 % and profitability was nearly cut in (ASMs) for dual and triple-mode smart phones, half, dropping below three % for the first time in tablets and datacards. seven years. Analysis from the Strategy Analytics Advanced Defence Systems (ADS) service report, These newest devices cover a wide range of “Defence Industry Profitability Gains in 2010,” applications from low-cost 3G handsets to HSPA+/ shows that defence industry performance stabilised LTE-enabled datacentric devices such as high- its financial performance for the year. end smart phones, data dongles and tablets , all of which require design flexibility, high performance Strategy Analytics analysis of twenty companies, and cost-effective architectures. including BAE Systems, Boeing, Cobham, EADS, General Dynamics, Harris, ITT, Lockheed Martin, The firm’s comprehensive RF switch products are Northrop Grumman and Raytheon, shows that based on both gallium arsenide (GaAs) and silicon- revenues increased year-on-year by only 1% in on-insulator (SOI) technologies and complement its 2010 to reach over $458 billion. This arrested the front-end and power amplifier (PA) module portfolio, downward spiral, although not enough to reverse allowing the company to capture additional dollar the revenue losses suffered in 2009. However, content per platform. profitability improved considerably with year-on-year profits increasing where companies took steps to “Skyworks is excited to be augmenting our address the impact of defence budget constraints. broad GaAs and silicon based RF front-end solutions portfolio with these new SOI devices “2009 marked the first time in seven years that that help address real market needs and enhance defence industry revenues had dropped,” observed performance requirements,” said Gregory L. Asif Anwar, Director ADS, at Strategy Analytics. Waters, executive VP and general manager of “The industry did manage to stay in the black in front-end solutions at Skyworks. “Our ability to meet 2009, but 2009 year-on-year profits dropped by customers’ needs on multiple fronts and with highly over 49%.” March 2011 www.compoundsemiconductor.net 79 news digest ♦ Telecoms integrated architectures, demonstrates the breadth for dual and tri mode, high power band switching and depth of Skyworks’ technology and capabilities applications that require low-insertion loss. The in this demanding market.” ASM has six high linearity ports providing full flexibility for 2G, 3G and LTE handsets and The SKY13402-466LF is a GaAs pseudomorphic datacards. It is based on SOI technology and high electron mobility transistor (pHEMT) single- includes Tx harmonic filters and is optimized for pole, ten-throw (SP10T) antenna switch with an GSM/EDGE, WCDMA and LTE systems. integrated mobility industry processor interface (MIPI) decoder and dual low-pass harmonic filters. The SKY18118 is a SP10T switch FEM packaged The switch has six transmit (Tx)/receive (Rx) ports in a compact 3.5 x 3.2 mm, 20-pin MCM. The FEM that make it ideal for any combination of 2G/3G has five high linearity ports providing full flexibility multimode cellular applications. Using advanced for 2G, 3G and LTE handsets and datacards. switching technologies, the device maintains It is based on SOI technology and includes Tx low insertion loss and high isolation for both Tx harmonic filters as well as 2G Rx surface acoustic and Rx switching paths. The switch also exhibits wave (SAW) filters and is optimized for compact an excellent triple beat ratio and 2nd/3rd order layout and highly integrated RF front end customer modulation distortion performance. solutions. The SKY18108 is a single-pole, nine-throw (SP9T) Samples of Skyworks’ new ASMs are currently antenna switch front-end module packaged in a available and will commence volume production in compact 3.2 x 2.5 millimetre (mm), 20-pin multi- the second half of 2011. chip module (MCM). The low-cost switch has three high linearity ports suitable for transparent bridging (tri-band 3G/quad-band 2G or TD-SCDMA/2G multi-mode handsets and datacards). The device is Skyworks Powers Multiple based on SOI technology and includes Tx harmonic LTE Platforms filters. It is designed for dual mode, high power switching applications that require low insertion The firm’s technology is enabling next-generation loss. The ASM is also optimized for both GSM/ smart phones, netbooks and datacards and allows EDGE/WCDMA and TD-SCDMA systems. higher data rates and always-on connectivity. The SKY18110 is a single-pole, eight-throw (SP8T) Skyworks Solutions, an innovator of high-reliability ASM packaged in a compact 3.2 x 3.2 mm, 20- analogue and mixed signal semiconductors pin MCM for use in multi mode, high power band enabling a broad range of end markets, has switching applications that demand low-insertion expanded its LTE product portfolio. loss. The ASM has six high linearity ports providing full flexibility for 2G GSM/EDGE, 3G and LTE The firm’s products have continued to gain traction handsets and datacards. It is based on SOI with leading handset OEMs and smart phone technology and includes Tx harmonic filters. providers and are at the heart of several new, yet unreleased 4G devices slated for launch later this year. Skyworks enabled the world’s first commercial LTE device, Samsung’s high speed 4G USB modem, the world’s first mobile LTE handset, and several platforms from ST-Ericsson. Since then, the firm has secured additional design wins with HTC, among others, to power various 4G smart phones. Today’s 4G platforms allow consumers to access and stream data and multimedia applications The SKY18116 is a SP8T antenna ASM packaged anytime, anywhere at higher data rates than in a compact 3.2 x 2.5 mm, 18-pin MCM designed previous generation networks. Skyworks’ family 80 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest of LTE products provide the most complete and full 1710-1785 MHz bandwidth coverage of bands flexible set of options for manufacturers developing III and IV into a single compact package. Because and building 4G-enabled handsets, basestations, of high efficiencies attained throughout the entire wireless PC cards, and a host of other embedded power range, the device delivers unsurpassed talk- solutions. time advantages. The PAM meets the stringent spectral linearity requirements of HSDPA, HSUPA “Skyworks is delighted to be an industry leader in and LTE data transmission with high power added delivering solutions that ultimately offer consumers efficiency. A directional coupler is integrated into the the best user experience, particularly in this age of module thus eliminating the need for any external always on connectivity,” said Gene A. Tkachenko, coupler. senior director of engineering at Skyworks. “By improving efficiency and performance, boosting The SKY77704 PAM is a fully matched, surface network throughput, and simplifying roaming, mount module developed for WCDMA applications. Skyworks’ broad product portfolio is offering This small and efficient module packs full 824- tangible benefits to handset OEMs and smart phone 849 MHz bandwidth coverage of bands V and X providers, as well as infrastructure suppliers and into a single compact package. Because of high operators worldwide to ensure consumers have efficiencies attained throughout the entire power access to high-speed mobile broadband data and range, the device delivers unsurpassed talk-time global coverage.” advantages. The PAM meets the stringent spectral linearity requirements of HSDPA, HSUPA and LTE According to the Global Semiconductor Alliance data transmission with high power added efficiency. (GSA), 180 operators are investing in LTE in 70 A directional coupler is integrated into the module countries - with 17 networks already launched thus eliminating the need for any external coupler. worldwide. The SKY77706 PAM is a fully matched, surface mount module developed for LTE/ evolved universal mobile telecommunications system terrestrial radio access network (EUTRAN) applications. This small and efficient module packs full coverage of LTE FDD band VII into a single compact package. The PAM meets the stringent spectral linearity requirements of LTE modulation with quadrature phase shift keying (QPSK)/16 quadrature amplitude modulation (QAM) modulations from 1.4 to 20 MHz bandwidth and full or partial resource block allocations with high power added efficiency. The SKY77702 PAM is a fully matched, 10-pad surface mount module developed for wideband The SKY77707 PAM is a fully matched, surface code division multiple access (WCDMA) mount module developed for LTE/EUTRAN applications. This small and efficient module applications. This small and efficient module packs packs full 1850-1910 megahertz (MHz) bandwidth full coverage of LTE bands XII /XVII into a single, coverage of band II into a single compact package. compact package. The PAM meets the stringent The PAM meets the stringent spectral linearity spectral linearity requirements of LTE modulation requirements of high speed downlink packet with QPSK/16 QAM modulations from 1.4 to 20 access (HSDPA), high speed uplink packet access MHz bandwidth and full or partial block allocations (HSUPA) and LTE data transmission with high with high power added efficiency. power added efficiency. A directional coupler is integrated into the module thus eliminating the need The SKY77708 PAM is a fully matched, surface for any external coupler. mount module developed for LTE/EUTRAN applications. This small and efficient module packs The SKY77703 PAM is a fully matched, 10-pad full coverage of LTE bands XIII/XIV into a single surface mount module developed for WCDMA compact package. The PAM meets the stringent applications. This small and efficient module packs spectral linearity requirements of LTE modulation March 2011 www.compoundsemiconductor.net 81 news digest ♦ Telecoms with QPSK/16 QAM modulations from 1.4 to 20 “Currently system vendors require their own MHz bandwidth and full or partial resource block photonic integration technology to deliver a allocations with high power added efficiency. practical and economically feasible 100 GbE system solution,” said Lars Zimmermann, project The SKY77449 PAM is a fully matched, surface coordinator of GALACTICO. “Our project aims mount module developed for LTE/ EUTRAN to develop low-cost and small size 100 GbE applications. This small and efficient module packs interfaces, and provide integrated coherent full coverage of bands XIII, XIV LTE, EUTRAN and transmitters and receivers that deliver a massive WCDMA into a single compact package. The device amount of aggregate bandwidth.” meets the stringent spectral linearity requirements of LTE modulation with QPSK/16 QAM. Additional “We have been at the forefront of the transition features include noise compliance under all test from 10 and 40 gigabit per second (Gbps) networks conditions, Vbias control in LPM and an integrated to 100G and beyond,” said, Uwe Fischer, head of coupler and detector inside the PAM. optical networks product management at Nokia Siemens Networks. “It’s no wonder that when the project GALACTICO was initiated, we came forward to lend our expertise. With our expertise in the optical transport domain, we will provide Nokia Siemens to Support specifications for the components to be developed as well as participate in the ensuing lab demos and Development of Optical field trials.” Ethernet Transponders GALACTICO is a three-year research project The firm is supporting a project to grow InP and focused on coherent optical communication GaAs on silicon to advance the progress of systems, and is supported by the Seventh integrated coherent transmitters and receivers that Framework Program (FP7), Information and deliver a massive amount of aggregate bandwidth. Communication Technologies (ICT) of the European Commission (EC). The total budget of the project is Nokia Siemens Networks has joined the European € 4,018,219.00, with €2,900,000.00of that coming Commission’s GALACTICO project to develop from the European Commission. compact, cost-efficient, silicon-based photonic circuits for Gigabit Ethernet (GbE). The three-year research program aims to uniquely Anadigics’ InGaP PA blend three of the most established integration Maximises Wireless Network materials – InP (Indium Phosphide), GaAs (Gallium Arsenide), and silicon – on a common silicon- Connectivity based platform. The firm says its AWB7227 power amplifier (PA) The project aims to tackle the problem of realising delivers exceptional output power, linearity and the high-performance, volume production and low- efficiency. It is best suited for use in femtocells, cost requirements of the next generation of GbE, picocells and other small-cell infrastructure and eventually Terabit, optical transponders. equipment. An optical transponder receives a signal and Responding to rising market demand for femtocell then processes and re-transmits it at a different and picocell technology, Anadigics has introduced a frequency. new highly linear and efficient power amplifier (PA), the AWB7227. Apart from Nokia Siemens, the GALACTICO consortium includes nine partners comprising university research centres and leading companies from Greece, Germany, Italy, Spain and the UK. 82 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest for PAs like the AWB7227, which provide flexibility in network architectures by delivering high linearity, output power, efficiency and reliability.” Leading wireless market analysts, as well as industry organisations such as the Femto Forum, are projecting significant expansion for the femtocell/picocell market. Published reports predict femtocell shipments over the next three years to reach nearly 50 million units. In addition, the market for femtozone services, which include mobile voice and data applications triggered when a device comes within range of a femtocell, is expected to reach nearly $2 billion in revenue by 2015. Terabit Photonic Integration Designed to enable a new class of wireless infrastructure equipment, the AWB7227 extends for Next Generation Optical Anadigics’ portfolio of PAs for use in small-cell base Networks stations, which are rapidly growing in popularity among service providers as an effective way to Infinera’s InP monolithic PIC contains more than expand wireless network capacity and coverage. 150 optical components, which are all integrated onto a single chip smaller than a fingernail. The firm says its AWB7227 PA has exceptional linear output power and high efficiency, and Infinera’s latest photonic integrated chip (PIC) is supports WCDMA, HSDPA and LTE air interfaces at the heart of a new 10-channel receiver, each operating in the 2.11 GHz to 2.17 GHz band. operating at 100 Gbit/s rates. The firm says it is the Complementing other PAs in the Anadigics AWB first in the industry to achieve a capacity of a trillion family, including the AWB7127 and AWB7123, the bits per second. AWB7227 delivers +27 dBm of WCDMA power with an ACPR better than -50 dBc and 14% power- The chip is an InP-based monolithic PIC and is added efficiency. designed to operate nominally at a wavelength of 1550nm and over the C band of the optical fibre Such performance enables femtocells and picocells spectrum. with further reach and smaller, more thermally- efficient designs. Manufactured using an advanced The PIC contains more than 150 optical InGaP HBT MMIC technology the device combines components, such as frequency tunable local temperature stability with ruggedness. oscillator (LO) lasers, optical hybrids for mixing the LO and incoming signals and variable It comes in a 7 x 7 x 1.3 mm surface mount optical attenuators for LO power control. It also package incorporating RF matching networks has a spectral demultiplexer to separate the optimised for output power, efficiency and linearity individual wavelength channels, and 40 balanced in a 50 Ω system and supports multi-carrier photodetector pairs. These components are operation in E-UTRA downlink operating Band I. all integrated onto a single chip smaller than a fingernail. “Femtocells and picocells are a smart and cost- effective way to provide ubiquitous wireless “Traditional transponder-based system architectures coverage for end users,” said Joe Cozzarelli, Senior are inflexible and costly and time-consuming to Director, Broadband RF Products, Anadigics. upgrade,” said Radhakrishnan Nagarajan, Research “As more service providers adopt small-cell base Fellow at Infinera. “Our PIC approach enables us to station technology, we anticipate strong demand make optical networks more powerful, flexible and intelligent than ever before using equipment that is March 2011 www.compoundsemiconductor.net 83 news digest ♦ Telecoms significantly smaller, less expensive and uses much less energy.” Mobile Internet Usage In virtually all types of data transmission, the Still Rising information is encoded in ways that allow it to travel the farthest while occupying the least amount According to Strategy Analytics, mobile web of signal spectrum. The key technical advance browsing remains predominantly a `snacking’ or in the PIC designed for Infinera’s new 100Gbps `time critical’ behaviour, whereas the PC/laptop per channel is its way of detecting incoming data is used for more leisurely or intensive usage encoded using the optical industry’s most spectrally scenarios. efficient modulation technique called polarization- multiplexed QPSK. The proportion of mobile device owners who use their phone to access the internet has quadrupled in the US, and tripled in Western Europe over the past four years according to a new report from Strategy Analytics. Smartphone owners, who typically browse the internet on their phones daily, are driving this increase in mobile internet usage. The Strategy Analytics Wireless Media Lab report, “Mobile In a manner similar to how AM (amplitude Internet Usage Continues to Rise: Android Users modulation) and FM (frequency modulation) Catching Up with Apple,” analyses behaviours imprints information on, respectively, the amplitude around mobile internet usage. and frequency of radio waves, QPSK modifies the light’s phase to represent the data. As a result, “The majority of respondents in both Western using QPSK with polarization multiplexing, four Europe and the US still spend more web browsing times as much information is conveyed each time on their computers than on their mobile second compared with the previous method, which phones, with the majority of respondents spending simply switched the light on and off. less than 10 minutes per session browsing the mobile web,” commented Paul Brown, Director “But just as important as a clever and efficient of User Experience at Strategy Analytics. “Thus, encoding method for the transmitter is a fast mobile web browsing remains predominantly a and reliable way for the receiver to convert `snacking’ or `time critical’ behaviour, whereas the the information back to its original form,” said PC/laptop is used for more leisurely or intensive Nagarajan. “For polarization multiplexed QPSK usage scenarios.” we designed and integrated narrow-line-width lasers that detect the phase encoded data in a very Kevin Nolan, VP of User Experience at Strategy efficient manner.” Analytics, added “In terms of volume, more consumers access the web on mobile phones Infinera expects PICs with a capability of a terabit primarily via the cellular connection in both the or more to be commercially available within a few US and Western Europe. This is because large years. The company has announced that a 500 numbers of non-Smartphone owners, who do not gigabits-per-second PIC will be available in 2012. have WiFi enabled devices, are beginning to access the mobile web.” 84 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest currents in the industry. The ALT67xx series deliver Anadigics Expands 4G LTE industry-leading efficiency to extend battery life Power Amplifier Family in handsets, smart phones, tablets, netbooks, and notebooks. The Company’s HELP4 PAs also The firm says its new HELP4 PA modules are the provide highly efficient operation in WCMDA, HSPA most efficient in the industry and can be used in and HSPA+ systems. fifteen LTE bands worldwide. “The rapid deployment of LTE networks is enabling Anadigics, a provider of radio frequency (RF) manufacturers to design new mobile devices with and mixed signal semiconductor products, has unprecedented access to multimedia content,” expanded its fourth generation High-Efficiency-at- said Marcus Wise, VP of Wireless RF Products at Low-Power (HELP4) LTE (Long Term Evolution) Anadigics. “Our expanded HELP4 power amplifier power amplifier (PA) family. family supports fifteen LTE bands, enabling users around the world to experience the full potential of The ALT67xx series HELP4 4G PAs have three wireless 4G on long-lived mobile devices.” selectable power modes to deliver the power and linearity required for 4G mobile devices over a full A report published by the Global Mobile Suppliers range of operating conditions. Association (GSA), in January 2011, confirmed 128 operator commitments to deploy commercial LTE Anadigics says these devices provide the highest systems in 52 countries. The number of operators PAE and lowest quiescent current in the industry. investing in LTE deployments and trials increased by more than 140% in just one year, making LTE the fastest developing system in the history of mobile telecommunications. Anadigics says the average current consumption shows a reduction of 30%, compared with previous generation PAs and also has three mode states to achieve exceptional power-added efficiencies at low-range and mid-range output power levels. The series has a low quiescent current of less than 4 mA and the firms says it has the best-in-class linearity at maximum output power. The highly integrated module has a footprint of 3 mm by 3 mm by 1 mm. It has integrated DC blocks on RF ports and internal voltage regulation and an integrated “daisy chainable” directional RF coupler with 20dB directivity. A spokesperson for Anadigics said, “We have The complete family of products provides support witnessed how battery-life remains a key challenge for paired FDD and unpaired TDD LTE with an as designers adopt new wireless technologies that identical pin-out across the entire family. provide greater data speeds and enable richer multimedia content. Anadigics continues to help Samples of the Anadigics HELP4 4G PAs are mobile device manufacturers face the latest 4G available now and evaluation kits are available upon challenge, by providing the world’s most efficient request. LTE power amplifier.” Anadigics’ HELP4 4G PAs use the Company’s exclusive InGaP-Plus technology to achieve optimal efficiency across low-range and mid-range output power levels and provide the lowest quiescent March 2011 www.compoundsemiconductor.net 85 news digest ♦ Telecoms Communications Test and Measurement revenue of JDSU Announces GAAP $231.4 million increased by 30.8% compared to the Revenue of $473.5 million second quarter of fiscal 2010. Revenue from this segment represented 48.5% of total net revenue. Communications Test and Measurement represented the largest segment with revenues of Communications and Commercial Optical Products $231.4 million which represented 48.5% of total net revenue of $191.1 million increased 70.2% revenue. compared to Q2 FY 2010. Revenue from this segment represented 40.0% of total net revenue. JDSU has reported results for its second fiscal quarter ended January 1, 2011. Optical Communications revenue of $168.4 million increased 76.2% compared to the second quarter of On a GAAP basis, net revenue for the second fiscal 2010. fiscal quarter of 2011 was $473.5 million and net income was $23.6 million, or $0.10 per share. This Commercial Lasers revenue of $22.7 million compares to net revenue of $342.9 million and net increased 35.9% compared to Q2 FY 2010. loss of $(19.5) million, or $(0.09) per share for the second fiscal quarter of 2010. GAAP gross margin Advanced Optical Technologies revenue of $54.7 for the quarter was 45.2%. million remained flat compared to the second quarter of fiscal 2010. Revenue from this segment “In fiscal Q2 JDSU reported record revenues, gross represented 11.5% of total net revenue. margin and operating margin, which exceeded our operating model target,” said Tom Waechter, Americas’ customers represented 51% of total net JDSU’s President and CEO. “This is an exciting revenue for the quarter. EMEA and Asia-Pacific time for JDSU. Our market drivers are strong, our customers represented 26% and 23%, respectively, innovation engine and pipeline for new products is of total net revenue. robust, and we continue to increase our operating leverage.” The Company held $ 655.3 million in total cash and generated $60.7 million of cash from operations for the quarter ended January 1, 2011. Business Outlook For the third quarter of fiscal 2011, ending April 2, 2011, the Company expects non-GAAP net revenue to be in the range of $440 to $460 million. Financial Overview – Second Fiscal Quarter Kopin Wins Supplier Award Ended January 1, 2011 from Skyworks GAAP net revenues increased 38.1% compared to the second quarter of fiscal 2010. The firm has won the “Raw Materials Supplier Award” for the fourth consecutive year. All numbers in the following section are unaudited non-GAAP results unless stated Kopin Corporation, a leading producer of otherwise. heterojunction bipolar transistor (HBT) wafers for smart phones and other mobile devices, has Gross margin was 48.8% compared to 44.6% in received the 2010 Raw Materials Supplier Award the Q2 FY 2010. Operating margin was 15.3% from Skyworks. compared to 8.2% in the second quarter of fiscal 2010. The award was presented to Kopin during Skyworks’ Supplier Day, held January 11 in Newport 86 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest Beach, Calif., for the supply of HBT and other The AWB7230 meets WiMAX spectrum mask advanced III-V epi wafers to Skyworks’ Newbury requirements while delivering exceptional linear RF Park, Calif. wafer fab. This is Kopin’s fourth power, and can serve as the final stage amplifier consecutive award in this category in addition to a in the transmit chain of either a CPE or femtocell. Lifetime Partnership Award bestowed in 2008. Covering the full 3.3 GHz to 3.8 GHz band, the device supports 3.5 GHz WiMAX networks Bruce J. Freyman, Skyworks’ Senior VP of worldwide, and the firm claims it also provides the Worldwide Operations, states, “Partnership with highest level of power efficiency available for such Kopin has been invaluable during a period of applications. rapid growth for Skyworks. We are confident Kopin will continue to provide Skyworks with the The AWB7230 complements Anadigics’ AWB7221 manufacturing strength and technology leadership PA, which was released last year to enable CPEs required to meet the ever-increasing demands for and femtocells operating in the 2.5 GHz WiMAX 3G and emerging 4G wireless devices.” bands. With this latest PA, Anadigics now supports the two predominant sets of WiMAX frequency “Kopin is very appreciative of this award from bands used around the globe. Skyworks and we view it as a testament to our unwavering focus on quality, manufacturing, “As WiMAX and other 4G technologies continue technology improvements and customer support,” to emerge, Anadigics is responding to customer said Kopin President and CEO, John C.C. Fan. demands for high performance PA modules that “We value the long and prosperous relationship enable exceptional consumer and infrastructure with Skyworks and we are excited about continued solutions,” said Joe Cozzarelli, Senior Director, growth in the wireless markets we both serve.” Broadband RF Products, Anadigics. “With the AWB7230, Anadigics continues to expand its product portfolio and demonstrate industry-leading performance by providing wideband coverage at Anadigics Introduces InGaP high linear power levels, and with best-in-class power efficiency.” PA for WiMAX WiMAX CPEs provide an alternative to DSL and The firm’s AWB7230 module supports all 3.5 GHz cable modems, and also play a key role in the WiMAX frequency bands. transition to 4G, by offering consumers high speed wireless connectivity for their homes, shops or Expanding its portfolio in power amplifier (PA) businesses. solutions for communication equipment, Anadigics has introduced a new PA module designed for use According to industry organisation WiMAX Forum, in WiMAX Customer Premises Equipments (CPEs) nearly 600 WiMAX (fixed and mobile) networks and femtocells. have been deployed in 149 countries, with network coverage forecasted to be available to over 1 billion Anadigics’ new AWB7230 device is a fully-matched, potential subscribers worldwide this year. multi-chip-module (MCM) that enables network performance across all the 3.5 GHz WiMAX bands. Anadigics’ AWB7230 power amplifier is suited for use in current and next-generation WiMAX CPEs and small-cell base stations. Engineering samples are available now for qualified opportunities. Manufactured using the firm’s advanced InGaP HBT MMIC technology and offering state-of-the-art reliability, the module offers temperature stability, and ruggedness. It delivers up to +29 dBm of WiMAX power with exceptionally low EVM and provides more than 30 dB of RF gain. March 2011 www.compoundsemiconductor.net 87 news digest ♦ Telecoms The AWB7230 PA operates with 16% power added- efficiency at rated output power and incorporates GaAs Cellular PA Market to RF matching networks optimised for output power, Retain Dominance efficiency, and linearity in a 50 Ω system. Despite competition and pricing pressures, GaAs will remain the dominant technology in PAs over the next five years, with continuing gains by CMOS and PA Transistor Market to LDMOS in cheaper mobile devices. Exceed $1 Billion in 2014 Strategy Analytics RF & Wireless Components market report, “PA Forecast 2011 - 2015,” makes a At the base station level, LDMOS will remain the case for the strong growth of the cellular RF power dominant transistor technology although GaN will amplifier (PA) market to $3.7 billion over the next gain market share, says Strategy Analytics. five years. The recently released report, “Cellular Infrastructure This will be driven by LTE, multi-mode PAs, Component Demand,” forecasts that power cellphone sales in developing countries and amplifier (PA) transistor revenue from base stations growing demand for data devices. will grow from nearly $520 million in 2009 to slightly more than $1 billion in 2014. According to Christopher Taylor, Director, RF & Wireless Components, “LTE devices will quickly Consumer adoption of new applications, growing emerge as the second most significant driver of PA wireless subscriptions and next generation demand after UMTS devices. Most LTE devices standards are fuelling base station and PA growth. require one 2G / 2.5G power amp, one or more 3G power amps, and one LTE power amp.” The report forecasts traditional macro and microcell base station deployment will peak at slightly over 1 “ While this may sound like a windfall in the making million base stations per year in 2012 before falling for PA suppliers, OEMs will demand multi-mode to slightly less than 1 million in 2014. Strategy PAs that can handle more than one air interface Analytics sees explosive growth for lower capacity to reduce the front-end complexity and bill of pico and femtocell base stations, estimating that materials in LTE mobile devices. Multi-mode PAs they will exceed 7.8 million units deployed per year require improved methods to manage linearity and by 2014. efficiency, such as envelope tracking, which will bring new players into the PA market as partners or “Mobile operators are responding to consumer competitors to existing PA vendors,” he concluded. demand for data-centric applications by rolling out high data rate base stations,” noted Eric Higham, According to Eric Higham, Director of the Gallium Director of the Strategy Analytics GaAs and Arsenide and Compound Semiconductor service Compound Semiconductor Technologies Service. at Strategy Analytics, “The changes coming to the “These higher rates require a network architecture power amplifier market represent new opportunities that makes uses of smaller base stations, which will for CMOS PAs to compete with the incumbent fuel strong semiconductor industry growth.” GaAs, but also new technical challenges. Overall, GaAs will remain the dominant technology in PAs Asif Anwar, Director in the Strategy Analytics over the next five years, with continuing gains by Strategic Technologies Practice, added, “We CMOS and LDMOS especially in lower-priced expect to see the market share of GaN transistors mobile devices.” increase, but LDMOS will remain the dominant power amplifier transistor technology.” 88 www.compoundsemiconductor.net March 2011 Telecoms ♦ news digest assemblies and limiting post-amplifiers. Protokraft Razor-sharp with GaAs /InGaAs Transceivers The electrical interface to the Razor series Fibre Optic Transceivers with Duplex LC interface is The compact Razor PIN fibre optic transceivers a surface mounted electrical connector PCB pin have preamplifier assemblies which should improve assembly enabling interconnection to high speed optical network performance and reliability in harsh electrical communication ports in harsh environment environments. applications. Protokraft has revealed its Razor Series of fibre Designed to operate in harsh environments, these optic transceivers with a duplex LC interface. modules have excellent thermal characteristics, high tolerance to vibration and shock and corrosion resistant aluminium housings for exceptional EMI/ RFI performance. Standard operating temperature range between -40°C and +85°C, with a standard storage temperature range of -55°C to +100°C. The Razor series fibre optic transceivers with duplex LC connector interface operate at link distances up to 50 meters. All operate from +3.3VDC power supplies. Small quantities of the Razor series are available This series of transceivers are suitable for now and small production quantities will be military, petrochemical, mining, industrial or utility available during Q2 2011. applications where significant levels of shock, vibration and extreme temperature ranges are experienced. The components are designed for use in harsh environments where small size, weight reduction and resistance to harsh environments are valued. The Razor Series of fibre optic transceivers with duplex LC interfaces support Fast or Gigabit Ethernet, Fibre Channel, sFPDP, ARINC 818, ARINC 664 and many other protocols for multimode fibre optic links. The studs provide secure mounting in high vibration environments and the shells meet stringent corrosion performance requirements. The optical fibre link supports distances up to 550 metres (at 50/125μ - 500MHz*Km MMF). The maximum optical channel bit error rate is less than 10-12. With strong, durable and light cast housings, they operate between -40°C and +85°C and have mounts in an industry standard PCB footprint. The Razor Series fibre optic transmitters are high performance 850nm VCSELs. The optical receivers consist of GaAs or InGaAs PIN and preamplifier March 2011 www.compoundsemiconductor.net 89 news digest ♦ RF Electronics About Skyworks’ Power Amplifier Modules RF Electronics The SKY77701, SKY77703 and SKY77705 PAMs are fully matched 10-pad surface mount modules developed for wideband code division multiple Skyworks Supports Next access (WCDMA) applications. The small and efficient modules pack full 1920-1980 megahertz Generation Smart Phones (MHz) (SKY77701), 1710-1785 MHz (SKY77703), and 880-915 MHz (SKY77705) bandwidth coverage and Tablets from HTC into a single, compact package. The firm is capitalising on consumers insatiable demand for mobile connectivity and social networking. Skyworks Solutions, an innovator of high reliability analogue and mixed signal semiconductors enabling a broad range of end markets, says it is powering several of HTC’s new Android-based smart phones in addition to its latest tablet offering. These next generation platforms, which include the Flyer tablet, Incredible, Desire S, Wildfire Because of high efficiencies attained throughout the S, ChaCha and Salsa smart phones, leverage entire power range, the PAMs deliver unsurpassed Skyworks’ highly integrated power amplifier talk-time advantages. In addition, the devices meet modules and the company’s industry leading switch the stringent spectral linearity requirements of high technology. speed downlink packet access (HSDPA), high speed uplink packet access (HSUPA), and long- HTC’s newest smart phone platforms encompass term evolution (LTE) data transmission with high several innovative features including high definition power added efficiency (PAE). A directional coupler video recording, a unique tilt design shape for the is integrated into the modules, thus eliminating the display and QWERTY keyboard, contoured body need for any external coupler. design, stereo surround sound, technology to share music, videos and photos direct to a TV, and The SKY77336 PAM is designed in a compact-form dedicated Facebook buttons -- all designed to allow factor for quad-band cellular handsets comprising users a seamless, social experience. GSM850/900, DCS1800 and PCS1900, supporting Gaussian minimum shift keying (GMSK) and HTC’s most recent tablet is an ultra-light device that polar enhanced data for GSM evolution (EDGE) combines both natural touch and pen interaction to modulation. Class 12 general packet radio service complement its existing trademark design language (GPRS) multi-slot operation is also supported. and incorporates the industry’s first cloud-based mobile gaming service on a tablet. About Skyworks’ Switches “Skyworks is excited to be further expanding our The SKY13309-370LF is a pseudomorphic high partnership with HTC as they launch innovative electron mobility transistor (pHEMT) gallium devices to meet consumer’s growing demand arsenide (GaAs) integrated circuit (IC) SP3T for mobile connectivity and social networking antenna switch operating in the LF-3 frequency applications,” said Liam K. Griffin, senior vice range. Switching between the antenna and Tx/Rx president of sales and marketing at Skyworks. ports is accomplished with three control voltages. “Leveraging our analogue, RF and mixed signal The low loss, high isolation, high linearity, small size design capabilities, we are able to deliver a broad and low cost features make this switch ideal for all portfolio of solutions to meet our customers’ WLAN and Bluetooth systems operating in the 2.4- diverse needs while at the same time capturing an 2.5 gigahertz (GHz) band. increasing level of content.” 90 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest The SKY13364-389LF is a GaAs pHEMT SP10T PowerSmart family of power platforms, and, on antenna switch with an integrated complementary February 14, 2011, RFMD unveiled a family of metal-oxide semiconductor (CMOS) decoder and cellular power amplifiers delivering industry-leading dual low-pass harmonic filters. The switch has four peak efficiency. WCDMA Tx/Rx ports, four GSM Rx ports, and two GSM Tx ports that make the device ideal for cellular Bob Bruggeworth, president and CEO of RFMD, handsets and data card applications. commented, “RFMD has a proven history as a product and technology leader. While we’re proud of our achievements since our founding, we believe we’re just beginning to see the many ways in RFMD Celebrates 20 Years of which our products and technologies can positively Product and Technology impact the experience of individuals, companies and markets. The RFMD team is comprised of The designer and manufacturer of high- outstanding individuals with a shared commitment performance radio frequency components and to product and technology leadership, and we are compound semiconductor technologies, is very optimistic about our opportunities for revenue celebrating its 20th anniversary. growth and strong operating results.” RF Micro Devices has commemorative events RFMD is a global leader in RF components and planned at its locations throughout the year to compound semiconductor technologies. The celebrate the company’s 20th anniversary. Company supplies its RF components into multiple industries, including cellular handsets, cellular RFMD was incorporated on February 27, 1991, infrastructure, CATV infrastructure, smart energy, and held its initial public offering on June 3, 1997. WiFi, and aerospace and defense. The Company is also investing in new growth markets, including From its earliest days, RFMD has been an innovator concentrated photovoltaics (CPV), RF components in the semiconductor industry. RFMD was a pioneer for automotive and point-to-point radio applications, in the commercialization of RF components using and GaN-based power and switching components gallium arsenide (GaAs) compound semiconductor for defence and power electronics markets. technology, and today RFMD is one of the world’s leading manufacturers of GaAs technology. RFMD says its record of “industry firsts” includes: In the 1990’s RFMD was a primary contributor to * First to commercialise GaAs HBT the rapid growth in the cellular handset market, and * First 6” GaAs manufacturing capability in 2000 the firm was identified by Fortune magazine * First to ship one billion cellular power amplifiers as the second-fastest growing company in America. * First to launch open-loop polar modulation In 2004, RFMD became the first semiconductor transmit architecture company to ship one billion cellular power * First to introduce integrated power control for PAs amplifiers, and today the company routinely ships (PowerStar) greater than three million RF components per day. * First to ship RF components with integrated RF shielding Since RFMD’s founding, the Company’s * First to commercialise high-performance, low-cost commitment to product and technology leadership CMOS for switch-based products has enabled it to deliver innovative, breakthrough * First to commercialise RF configurable power core products that have reshaped their respective (PowerSmart) product categories. * First to exceed 50% peak efficiency in 3G/4G power amplifiers These have included RFMD’s PowerStar power * First to introduce GaN for CATV amplifier amplifiers, RFMD’s silicon-based cellular switch applications technology, RFMD’s PowerSmart power platforms, and RFMD’s high-power GaN technology. Headquartered in Greensboro, N.C., RFMD is an In 2010, RFMD unveiled a revolutionary new ISO 9001- and ISO 14001-certified manufacturer RF Configurable Power Core at the center of its with worldwide engineering, design, sales and March 2011 www.compoundsemiconductor.net 91 news digest ♦ RF Electronics service facilities. Anadigics Announces Revenues up 54.3% Over GigOptix is “Best and 2009 Brightest” Technology The firm expects continued growth in the 3G and Leader 4G markets as it strives to expand its market share with new and existing customers. The firm was awarded by the MDB Capital Group based on the novelty and industry impact of its Anadigics, a producer of radio frequency (RF) innovative patent portfolio. and mixed signal semiconductor products, has announced its quarterly and 2010 financial results. GigOptix, a supplier of high performance electronic and optoelectronic components that enable next Quarterly net sales of $60.2million were up 44.1% generation 40G and 100G optical networks, has Year-Over-Year but a decrease of 1.7% compared been chosen as a “Best and Brightest” technology to the last quarter. Net sales in 2010 were up by leader. 54.3% over 2009 to $216.7 million. Christopher Marlett, CEO of MDB Capital Group, Quarterly GAAP EPS was $0.05 and full year GAAP commented, “GigOptix’s intellectual property (IP) EPS was $0.02. value and demonstrated innovation places it in the top 10% of the approximately 1500 technology small cap companies as ranked by our proprietary IP intelligence database called PatentVest.” “Our research has shown that this elite group of companies that demonstrate above average PatentVest metrics, such as PatentVest Tech Score and compound annual growth rate (CAGR) of patent applications, have significantly outperformed their publicly traded peers. In addition, companies in this group have demonstrated higher margins and more sustained growth,” he concluded. As of December 31, 2010, cash, cash equivalents “We are very happy to be recognised as a leading and short and long-term marketable securities innovator in our peer group,” stated Andrea Betti- totalled $106.1 million, an increase of $13.6 million Berutto, GigOptix’s Chief Technology Officer. over 2009. “GigOptix’s growth over the past 4 years has been driven by a combination of innovative product Net income for the fourth quarter of 2010 was $3.4 development coupled with focused execution in million, or $0.05 per diluted share. Net income for commercializing our pioneering products. We have 2010 was $1.3 million, or $0.02 per share. a broad and solid patent portfolio covering our innovations in electro-optical polymer materials and “I am very proud of our accomplishments during modulator designs, high speed analogue amplifier this past year in which we significantly increased design, flexible ASIC architectures, and we plan revenue by 54.3%, consisting of 72% growth in our to leverage our intellectual property to maintain Wireless business and 20% in Broadband. We also and extend our lead in bringing further innovative exceeded our goals for both profitability and free solutions to market.” cash flow,” said Mario Rivas, president and CEO. “Our strong performance in 2010 is a result of successful execution on the strategic initiatives that we outlined at the beginning of the year. Looking 92 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest forward, we remain well positioned to benefit from the continued growth in the 3G and 4G markets as we strive to expand our market share at new and existing customers, execute on design wins and continue to introduce superior new products.” Outlook for the Q1 2011 Tom Shields, chief financial officer commented, “We are seeing indications of greater than normal seasonality in the first quarter of 2011 primarily due to softness in China and through our distribution channels relating to excess inventories, coupled with a continued market correction expected to further impact our Cable and WiMax revenue. As a result, we currently anticipate total revenue to be in the range of $42 million to $44 million. Net loss “Our AirPrime MC Series embedded modules per share on a GAAP basis for the first quarter of help our customers take full advantage of new 4G 2011 is expected to be ($0.11) to ($0.12). Non- network technologies,” said Dan Schieler, Senior GAAP loss per share, excluding non-cash stock VP and General Manager, Mobile Computing for compensation expense, is expected to be between Sierra Wireless. “With unprecedented throughput, ($0.07) and ($0.08). The GAAP net loss and non- these modules open up new opportunities for GAAP loss per share are based on an estimated mobile computing, multimedia, and HD video weighted average outstanding common share count applications. The superior performance and of 69.2 million.” reliability of Anadigics’ HELP3E power amplifiers play a critical role in our AirPrime MC series and support our efforts to deliver superior network 3G and 4G connectivity.” Anadigics PAs Power Sierra “Anadigics is proud to be a part of the Sierra Wireless’ AirPrime MC Wireless success story,” said Michael Canonico, Products Vice President of Worldwide Sales at Anadigics. “The AirPrime MC series unleashes the full The firms’ HELP3E dual-band power amplifiers potential of mobile devices by leveraging the latest enable Sierra wireless’ 4G AirPrime MC7700, 3G and 4G technologies. Our strong portfolio of AirPrime MC7710, and AirPrime MC7750 wireless industry-leading power amplifiers, high-volume modules. manufacturing prowess, and exceptional quality enable Anadigics to contribute to the development Anadigics, a producer of radio frequency (RF) and of current generation and next generation mobile mixed signal semiconductor products, is shipping platforms.” production volumes of its third generation High- Efficiency-at-Low-Power (HELP3E) dual-band Anadigics’ HELP3E PAs use the Company’s power amplifiers (PAs) to Sierra Wireless. exclusive InGaP-Plus technology to achieve optimal efficiency across low-range and mid-range output Sierra Wireless’ AirPrime MC7700 and MC7750 power levels and provide low quiescent currents. embedded modules are powered by Anadigics’ The compact 3 mm by 5 mm HELP3E dual-band AWU6615. The AirPrime MC7710 is enabled by the PAs feature an integrated voltage regulator. This AWU6618. level of integration reduces printed circuit board (PCB) space by 25% compared with current generation dual-band solutions. HELP3E PAs have three mode states to achieve high power-added efficiencies at low-range and March 2011 www.compoundsemiconductor.net 93 news digest ♦ RF Electronics mid-range output power levels and integrate two independent PAs in a single package. With a 3 mm by 5 mm footprint, they have Internal voltage regulation and an integrated RF coupler. The modules are WCDMA/UMTS, HSPA, and HSPA+ compliant. Anadigics’ HELP3E Dual-Band PA Family Includes: Commenting on the results for the quarter ended December 31, 2010, Ralph Quinsey, President and CEO, stated “TriQuint turned in record 2010 financial results growing revenue 34%. GAAP net income for the year grew almost 12 fold and non- GAAP earnings almost tripled. I am very pleased with the performance of the Company. With the world transitioning to a mobile Internet, I expect a strong market and see another solid growth year for TriQuint in 2011.” Samples of the HELP3E PAs are available now and evaluation kits are available upon request. Revenue for the fourth quarter of 2010 was $253.4 million, up 31% from the fourth quarter of 2009. Revenue for 2010 was $878.7 million, up 34% from 2009. Networks continued to enjoy a strong TriQuint Flying High with rebound from the lows of 2009, with quarterly revenue growing 50% year over year. Mobile Record Revenues of $878.7 Devices showed robust growth, with quarterly Million revenue increasing 34% year over year. Networks continued to enjoy a strong rebound from Gross margin for the fourth quarter of 2010 was the lows of 2009, with quarterly revenue growing 39.0%, up from 37.4% in the fourth quarter of 2009. 50% year over year while the Mobile Device Gross margin for 2010 was 39.9%, up from 31.9% segment also showed robust growth. for 2009. TriQuint Semiconductor, an RF solutions supplier, Operating expenses for the fourth quarter of 2010 has announced its financial results for the quarter were $61.6 million, or 24% of revenue, up from and year ended December 31, 2010. $59.1 million in the previous quarter and $53.9 Revenue for the quarter was $253.4 million, up 31% million in the fourth quarter of 2009. Operating from Q4’09. Mobile Devices quarterly revenue grew expenses for 2010 were $234.7 million. 34% from Q4’09 and Networks revenue for Q4’10 were up over 54% over the same quarter last year. Net income for the fourth quarter of 2010 was $42.5 million, or $0.25 per diluted share. Net income for 2010 was $190.8 million or $1.17 per diluted share. Outlook: The Company believes first quarter revenue will be between $215 million and $225 million. At the midpoint, this implies revenue growth of 22% over the first quarter of 2010. For the full year, the company believes continued robust growth in demand should lead to revenue growth of about 94 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest 20%. mobile data products RF9802 and RF9801 are released to Production and are sampling now. RFMD Introduces Transmit Modules for Quad & Dual Anadigics Names Murata as Band Manufacturing Supplier of The RF9802 quad band and RF9801 dual band the Year modules enable linear EDGE/GPRS transmission. The manufacturer of passive electronic components RFMD’s new RF9802 and RF9801 build upon the has received the prestigious award for excellence. successful RF716x GPRS family, incorporating full EDGE capability while maintaining a common Anadigics has honoured Murata Manufacturing footprint for ease of phone platform design. Using Company with its “Supplier of the Year Award”. RFMD’s patented PowerStar architecture, RF9802 includes such features as Power Flattening, VBATT The Supplier of the Year Award program was tracking, and EDGE low power mode. RF9802 is launched in 2009 to recognise suppliers who go the full quad band complement to the dual band above and beyond to deliver on their commitments RF9801. and service to ensure Anadigics’ success. According to Wagner, VP of Operations, Anadigics, “Murata has demonstrated outstanding performance in their ability to respond to rapid increases Features in demand for components, most notably our requirements for ceramic monolithic capacitors. * Power margin (34dBm low band POUT) for ease Murata consistently exceeds our expectations for of design and calibration quality, service and delivery. We view them as a * Scalability from dual-band to quad-band and strategic partner in our efforts to develop leading GPRS to EDGE utilising a series of pin-compatible edge RFIC solutions.” modules * Best-in-class EDGE linearity performance (high In accepting the award, Toshiyuki Sato, President band -67dBc ±400kHz ACPR and less than 3% of Murata Taiwan said, “Murata is truly honoured EVM) to receive this major award from Anadigics. On * PowerStar control, including power flattening behalf of my colleagues in Murata Electronics North for low power and current variation, and VBATT America and the entire Murata team, I am pleased tracking for improved switching performance at low to accept it. The business relationship we have VBATT Applications established between our firms reflects our mutual * GSM850/EGSM900/DCS1800/PCS1900 products commitment to achieving operational and service * 3V Quad-Band GSM/GPRS/EDGE handsets and excellence at the highest levels and we remain March 2011 www.compoundsemiconductor.net 95 news digest ♦ RF Electronics dedicated to growing our partnership well into the their functionality by adding GSM Rx SAW filters. future.” The RF1196 switch duplexer module (SDM) delivers the switch and filter capabilities of RFMD’s ASMs and SFMs and expands upon their functionality by RFMD Unveils Cellular FEMs integrating a WCDMA band 1 duplexer. for 3G/4G Applications The RF1196 is first in a family of RFMD SDM Each module is optimised to solve the complex RF products that significantly reduce total solution size requirements of 3G/4G smartphones related to high by delivering complete front end integration of all band count and harmonics. switch and filter requirements in a single front end module. RF Micro Devices has added four new products to RFMD has a large portfolio of radio frequency its front end modules for 3G/4G switch and signal components, including cellular power amplifier conditioning applications. modules, cellular transmit modules, antenna switch modules, switch filter modules, switch duplexer The newly introduced products are the RF8889A, modules, and front ends for Wi-Fi, WiMAX and GPS RF1291, RF1194A, and RF1196. Each module is applications. The firm also offers an expanding optimised to solve the complex RF requirements of portfolio of wireless infrastructure products, 3G/4G smartphones related to high band count and including broadband GaN power amplifiers for harmonics. 3G/4G base stations. Eric Creviston, president of RFMD’s Cellular Products Group (CPG), said, “RFMD’s highly integrated, high-performance cellular front end RFMD Powers Samsung modules solve our customers’ increasingly complex Galaxy Smartphones & RF requirements and deliver unmatched ease- of-use benefits related to size, performance and Tablets platform flexibility by offering ascending levels of switch, filter and duplexer functionality within The firm’s PowerSmart Platform and WiFi front end a single module. Importantly, our expanding modules support Samsung’s next-generation 3G/4G portfolio of antenna switch modules, switch filter devices. modules and switch duplexer modules is highly complementary to all of our power platforms and Samsung’s highly anticipated Galaxy S 2 and provide our customers a single scalable source for Galaxy Tab 10.1 will both feature RFMD’s the entire cellular front end.” PowerSmart power platform. The Galaxy Tab 10.1 will also feature RFMD’s RF5521 WiFi front end The RF8889A and RF1291 single-pole 10 throw module (FEM). (SP10T) antenna switch modules (ASMs) deliver high linearity performance and excellent insertion Bob Bruggeworth, president and CEO of RFMD, loss for high-throw count applications and are said, “RFMD is delighted to expand our participation compatible with reference designs from Qualcomm, in Samsung’s 3G/4G smartphones and tablets, Intel and ST-Ericsson. Both modules are specifically and we’re especially pleased to support the targeted at smartphone applications in which highly anticipated Galaxy S 2 and Galaxy Tab the coexistence requirements of multiple radio 10.1 with our PowerSmart power platforms and standards (GSM/WCDMA/LTE/WiFi/Bluetooth) market-leading WiFi components. We believe our place critical importance on switch linearity and PowerSmart power platforms are at the forefront harmonic performance. of the technology shift to converged front ends in multi-mode, multiband smartphones, and we The RF1194A switch filter module (SFM) delivers anticipate strong growth in PowerSmart shipments the linearity and insertion loss performance of the this year.” RF8889A and RF1291 ASMs and expands upon 96 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest PowerSmart power platforms feature a Products Group (MPG), said, “RFMD is very revolutionary new RF Configurable Power Core pleased to support TI across multiple high-volume that delivers multiband, multi-mode coverage of mobile and embedded consumer programs. The all cellular communications modulation schemes, RF3482 delivers high levels of integration and best- including 2G, 3G and 4G, up to LTE 64QAM. in-class solution size while meeting stringent IEEE 802.11b/g/n requirements. RFMD is highly focused In addition to the RF Configurable Power Core, on the rapidly expanding WiFi market and expects RFMD’s PowerSmart power platforms also include continued growth, supported by explosive growth all necessary switching and signal conditioning in the smartphone, tablet, PC, TV/Video, gaming, functionality in a compact reference design, automotive, Smart Energy and consumer white providing smartphone manufacturers a single goods end markets.” scalable source for the entire cellular front end. The RF3482 is a high-performance, single-chip RFMD’s RF5521 WiFi FEM satisfies smartphone integrated front end module (FEM) for WiFi and tablet manufacturers’ requirements for applications in the 2.4GHz to 2.5GHz ISM band. aggressive size reductions in 802.11b/g/n front end The RF3482 FEM greatly reduces customers’ solutions, while delivering high linear output power time-to-market and bill-of-material (BOM) cost by and greatly reducing the number of components delivering a highly integrated single placement outside the core connectivity chipset. solution. In addition to satisfying smartphone manufacturers’ requirements for aggressive size RFMD expects shipments of its PowerSmart power reductions in 802.11b/g/n front end solutions, the platforms and high-performance WiFi components RF3482 delivers high linear output power and to increase sequentially throughout the year. greatly reduces the number of components outside the core connectivity chipset. “TI’s WiLink 6.0 and WiLink 7.0 platforms are RFMD Arms Popular powerful multi-radio solutions able to support a wide range of connectivity requirements for various end Mobile Devices with WiFi equipments. Our customers seek complementary Connectivity solutions that enhance the WiLink platform’s capabilities exhibiting the same dedication to The RF3482 Front End Module (FEM) is featured in simplified integration and reliability as offered select smartphones and tablets equipped with the by TI’s technologies. RFMD’s RF3482 FEM is WiLink platform from Texas Instruments. one such solution that customers can use,” said Eran Sandhaus, director of marketing, wireless RF Micro Devices, has announced that global connectivity solutions, TI. smartphone and tablet manufacturers designing around the WiLink 6.0 and WiLink 7.0 platforms RFMD’s RF3482 is manufactured using the from Texas Instruments can integrate RFMD’s Company’s E/D-mode pHEMT fabrication process RF3482 to gain reliable, flexible WiFi connectivity. and is available in a small 3mm x 3mm x 0.45mm 16-pin QFN package. The RF3482 is fully RF- Volume shipments of the RF3482 have begun, and tested, meeting or exceeding the stringent RF front RFMD estimates shipments will increase in support end requirements of 802.11b/g/n systems. of key cellular and consumer device manufacturers. Bob Van Buskirk, president of RFMD’s Multi-Market March 2011 www.compoundsemiconductor.net 97 news digest ♦ RF Electronics RFMD Products Enable First components outside the core connectivity chipset. Ever Full 3D Smartphone by LG RFMD PAs Raise the Bar with The firm’s PowerSmart and WiFi design has 51% Peak Efficiency secured wins in multiple devices including LG’s world’s first full 3D smartphone, the Optimus 3D. The RF724x 4G HSPA+ power amplifiers deliver up to 51% peak efficiency. RFMD’s PowerSmart power platforms and WiFi front end modules have been selected by LG to RF Micro Devices, a designer and manufacturer enable a broad portfolio of next-generation 3G/4G of high-performance radio frequency components smartphones, including the LG Optimus 3D. This and compound semiconductor technologies, is the world’s first full 3D smartphone. The LG has unveiled its RF724x family of HSPA+ power Optimus 3D was unveiled at the Mobile World amplifiers (PAs). Congress 2011 in Barcelona. RFMD’s RF724x PAs are ultra-high efficiency, Bob Bruggeworth, president and CEO of RFMD, single-mode 3G/4G components that reset the bar said, “RFMD is pleased to support LG’s popular for performance in smartphones, tablets, and other Optimus product family, and we’re proud our high-performance data-centric connected devices. PowerSmart power platforms and WiFi components RFMD’s RF724x power amplifiers support ultra-high are featured in such an innovative device as the peak efficiency of 48%-51%, significantly above Optimus 3D. We believe our PowerSmart power current competitive offerings. Additionally, when platforms lead a product category that is reshaping combined with one of RFMD’s companion DC- the future of multimode, multi-band cellular RF DC converters or with chipsets featuring on-chip architectures, and we look forward to further DC-DC converter functionality, RFMD’s RF724x leveraging our product and technology leadership power amplifiers can deliver best-in-class DG.09 across LG’s growing 3G/4G product portfolio.” performance as low as 13 mA — directly translating into superior 3G talk time. RFMD’s RF724x PowerSmart power platforms feature an RF product family is comprised of five PAs covering Configurable Power Core that delivers multiband, WCDMA bands 1, 2, 4, 5 and 8, addressing the multi-mode coverage of all cellular communications most common 3G/4G frequency bands and band modulation schemes, including 2G, 3G and 4G, up combinations. to LTE 64QAM. The PowerSmart power platforms also include all necessary switching and signal Eric Creviston, president of RFMD’s Cellular conditioning functionality in a compact reference Products Group (CPG), said, “RFMD’s RF724x design, providing smartphone manufacturers a power amplifiers are specifically designed to reduce single scalable source for the entire cellular front the thermal impact of data usage in smartphones end. while enabling increased battery life during data- based applications like web surfing, video calls and RFMD’s PowerSmart power platforms are now in internet radio services. We anticipate significant production in support of multiple families of flagship customer adoption this year, and we expect our first 3G/4G smartphones and tablet devices, supporting production shipments will commence for a leading the Company’s expectations that PowerSmart North American smartphone manufacturer later this power platforms satisfy its customers’ most quarter.” stringent RF performance requirements. All RF724x power amplifiers are packaged in RFMD’s RF3482 WiFi front end module satisfies a standardised 3x3 mm footprint, significantly smartphone and tablet manufacturers’ requirements improving smartphone platform flexibility and for aggressive size reductions in 802.11b/g/n ease of implementation. RFMD’s RF724x power front end solutions, while delivering high linear amplifiers also feature an integrated high directivity output power and greatly reducing the number of coupler, standard 2-bit GPIO control logic, and low 98 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest insertion phase shift between bias states. RFMD’s RF323x power platform features the high- efficiency PowerStar-based RF323x 2G transmit RFMD offers a broad portfolio of 3G solutions in module with pin-compatible options supporting single-mode and multimode converged and hybrid either one or two bands of WCDMA. The pin- architectures to ensure compatibility with leading compatible WCDMA PAs are available in two chipset providers and enable global platform product family options. manufacturing. The first option, the RF724x family of WCDMA power amplifiers, addresses all major frequency bands and delivers industry-leading peak efficiency RFMD Reveals Power and DG.09 as low as 13 mA through the use of multi-bias control. The second option, the RF722x Platform for Entry-Level 3G family of WCDMA power amplifiers, also addresses Handsets all major frequency bands and is optimized for chipsets using 3-mode control schemes. The RF323x platform provides handset manufacturers with a complete reference design for RFMD’s RF323x power platform for entry-level 3G the implementation of multi-region multimode 3G handsets is compatible with major chipset providers handset platforms. including Qualcomm, Mediatek, Broadcom and ST Ericsson. RF Micro Devices, a designer and manufacturer of high-performance radio frequency components Samples are available now, and volume production and compound semiconductor technologies, is anticipated in the March 2011 quarter. has expanded its 3G product portfolio to include a complete power platform for entry-level 3G handsets. TriQuint’s WLAN Products The RF323x power platform, comprised of the Power Smartphones RF323x and RF72xx product families, provides handset manufacturers a complete reference Worldwide design for the implementation of multi-region multimode 3G handset platforms. The firm says its latest devices offer faster data exchange rates, extended battery life, and better RFMD’s RF323x power platform addresses the amplification of weak signals than competitive challenges confronting handset manufacturers as technologies. they seek to meet the increasing global demand for affordable smartphones. Using RFMD’s RF323x TriQuint has said that based on internal estimates power platform, designers of entry-level 3G of unit volume shipments and since ramping to smartphones can achieve the optimum balance of production last year, its two power amplifiers (PAs) cost, performance and flexibility in the RF front end for WLAN connectivity lead the market. while satisfying critical requirements for quality and reliability in high-volume handset manufacturing. Both the single and dual-band PAs are designed to augment the WiLink 6.0 solution and recently Eric Creviston, president of RFMD’s Cellular launched WiLink 7.0 solution from Texas Products Group (CPG), said, “Our customers see Instruments Incorporated (TI). cost as a key driver in the entry-level 3G segment and want flexible front end solutions that scale easily to address multiple operator and regional requirements. Our high-efficiency 3G entry power platforms provide a full array of tiered options at compelling price points, setting the benchmark for ease of implementation and current consumption in a single, scalable reference design.” March 2011 www.compoundsemiconductor.net 99 news digest ♦ RF Electronics TriQuint says its TQM679002A and TQP6M9002 support the truly connected lifestyle we envision devices offer faster data exchange rates, extended at TI,” said Eran Sandhaus, Director of Marketing, battery life, and better amplification of weak signals Wireless Connectivity Solutions, TI. than competitive technologies. Tim Dunn, VP and General Manager of Mobile Devices at TriQuint, said “WiFi connectivity is becoming a ‘must-have’ feature for today’s smartphones and tablets because it enables consumers the ability to leverage home networks and WiFi hotspots when the 3G networks are at capacity. We are pleased to be working closely with Texas Instruments to offer smartphone and tablet vendors an exemplary solution and are investing in Today’s smartphones and tablets increasingly capacity to support this growing market demand.” include both cellular and WLAN connectivity options, offering users the choice of broadband Both the single band 2.4GHz TQM679002A and connectivity between cellular networks or WiFi dual band 2.4GHz/5GHz TQP6M9002 are fully networks. The integration of both technologies integrated MMIC’s incorporating power amplifier benefits consumers and carriers by offloading and detectors, pre-PA filters, T/R switches, and cellular capacity onto local WiFi networks. WLAN Rx Balun. The 2.4GHz band SP3T switch seamlessly selects between WLAN TX, RX, and Given the additional bandwidth the 5GHz 802.11a Bluetooth paths. frequency band offers, an increasing number of tablets, smartphones, and other mobile internet The products offer integration with both the WiLink devices (MID’s) are dual-band WiFi enabled. 6.0 and WiLink 7.0 mobile platforms. The single band TQM679002A comes in a 3.0x3.0x0.45 TriQuint’s integrated WLAN PAs are built with its package and supports 802.11b/g/n + BT. The dual in-house E/D pHEMT and Copper Bump (CuFlip) band TQP6M9002 supports 802.11a/b/g/n + BT and technologies and are found in smartphones such as is available in a 4.0 x 4.0 x 0.45 package. the Motorola Droid & Droid2, RIM Blackberry Torch, and Samsung ‘Giorgio Armani’. TI’s WiLink 6.0 mobile platform is a complete Global Defense Contracts hardware and software offering comprising proven, carrier-quality mobile WLAN, Bluetooth® technology Maintain Momentum and FM cores integrated into a single chip. The WiLink 6.0 single-chip solution delivers low-battery Strategy Analytics says the defense industry is consumption, small form-factor and low cost benefitting despite tight budgets. requirements to meet the needs of handset and mobile device manufacturers worldwide. Despite tightening defense budgets in the US, contract activity maintained its momentum in “Our goal with the WiLink 6.0 and WiLink 7.0 January, with radar systems featuring prominently. platforms is to enable our customers to build revolutionary designs and products with co-existing The Strategy Analytics service report, “Defense connectivity options that meet the surface area and Electronics Industry Review: January 2011,” notes power requirements of mobile designs. TriQuint’s that contract awards totalled in excess of a billion as RF solutions for WLAN and Bluetooth technologies the first month of 2011 drew to a close. offer faster data rates and better amplification of weak signals in the mobile device’s often-cramped In addition, M&A (merger and acquisition) activity board space. We are pleased to be working with in the defense sector continued to strengthen as TriQuint to offer our mutual customers an easy-to- cash-rich, large firms look to secure market share, use mobile computing platform for the development key technologies or market entry. There were of next generation end-user experiences that no less than a dozen defense-oriented mergers, acquisitions and partnerships announced. 100 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest “Though some industry observers have warned of a military spending, but our data suggests that military flat market ahead, the focus on advanced systems procurement of pulsed RF power semiconductors is driving contract activity for the major players will continue at an almost undiminished rate. which should translate into good business for their Budgets for major weapons systems – very costly sub-contractors and component makers,” says Asif aircraft carriers or new fighter aircraft – may Anwar, Director, ADS service. suffer, but when it comes to ‘bang for your buck’, military electronics are comparatively inexpensive. “For example, there were a number of radar Electronic warfare and other forms of electronic systems-related contracts in January. Of particular communications are going to gain greater note, were contracts going to the usual players, prominence. National defence and air safety are Raytheon, Lockheed Martin, Saab and Thales. fairly immune to the vagaries of consumer markets, Airborne and naval platforms received the most so while there may be pauses as military budgets attention.” are thrashed out, we expect that we’ll generally see increased spending.” Anwar concludes, “This contract activity represents continued opportunities for the semiconductor Civil aviation safety is also something that simply industry. Looking ahead, DARPA’s (Defense has to be addressed. Many existing air traffic Advanced Research Projects Agency) aims to control and safety systems are now 30 years old combine digital-to-analog (D/A) converters and and nearing the end of their life-cycles. Upgrades high-power amplifiers, which will provide new to radar, improved transponders, and other steps to avenues for growth”. enhanced safety can’t be ignored. Also, commercial aviation is a worldwide market with many sources of Eric Higham, North American Director for ADS demand. commented, “Electronic warfare activity was also strong with IED (improvised explosive device) Meanwhile on the materials front, Gallium Nitride jamming contracts going to ITT and Raytheon, while (GaN) technologies are continuing their slow but Cobham, Harris and Rockwell Collins received steady march into new radar and other systems. communications-related contract awards.” GigOptix to Acquire Endwave Military and Commercial Corporation Aviation Strengthen RF The merger is the next step towards building the Power Market industry’s premier supplier of front end solutions for high speed optical and microwave RF ABI Research’s “Pulsed RF Power Semiconductors” communication links. study says that the demand for pulsed RF semiconductors is due to the strong electronic GigOptix, a supplier of high performance electronic warfare and communication markets. and electro-optic components that enable next generation 40G and 100G optical networks, has Continuing strong demand from the military and signed a definitive merger agreement to acquire commercial avionics sectors means that markets for Endwave Corporation. pulsed RF power semiconductors should continue robust growth, according to the latest forecasts from Endwave is a provider of high frequency RF ABI Research. solutions and semiconductor products for the wireless mobile backhaul communications, satellite The S-Band radar device market, for example, communications, electronic instruments and which is critical for both military and civilian aviation, defence and security markets. The combined is growing at greater than 10% per annum. company will retain the name GigOptix to become a high speed, high frequency leader for optical and Research director Lance Wilson notes that, “Some wireless communications. The acquisition is macro-economic analysts talk about declines in expected to close in the second quarter of this year. March 2011 www.compoundsemiconductor.net 101 news digest ♦ RF Electronics optical front ends; “I am very excited about the strategic merger of * Develop electro-optical systems-on-a-chip such GigOptix and Endwave. Once complete, the as integrated drivers and modulators; electro-optical combined company will be well positioned to be a transceivers on a chip; and microwave photonic leader in high speed communication components. transceivers for base stations; We are set to offer solutions to both the optical and * Consolidate GigOptix’s microwave products microwave RF front ends that will drive continued with Endwave’s MMIC product line for commercial growth and bring added value to our customers and and military applications with the potential for stockholders,” commented Avi Katz, GigOptix’s expansion into the high speed instrumentation Chairman of the Board of Directors and CEO. market; * Strengthen the combined company’s IC design “Responding to the core issue of increasing capabilities in both GaAs and SiGe manufacturing bandwidth to meet customer demand has shaped processes, which will enable additional integration, the technology advancements for both companies. functionality and cost reductions for products By combining Endwave’s extensive point to point targeting microwave/millimeter wave and microwave radio system knowledge and Monolithic broadband fiber optic applications; and Microwave IC (MMIC) product portfolio with * Strengthen the company’s 40G, 100G and next GigOptix’s portfolio of optical modulators and generation 400G Surface Mount Technology (SMT) broadband amplifiers, it positions us to not only packaging capabilities by leveraging Endwave’s expand our market opportunities, but also enables expertise in millimeter wave SMD packaging. us to increase our penetration of the existing customer bases and market segments. The “The acquisition of Endwave, an acknowledged combined company will be able to leverage leader in high frequency point to point radio Endwave’s manufacturing and GigOptix’s high communication systems, confirms GigOptix’s speed fibre optic front end technology to provide continuous commitment to support new generation cutting-edge solutions for next generation 100G and communication networks,” added Andrea Betti- 400G drivers and electro-optic sub-systems.” Berutto, GigOptix’s Chief Technology Officer. The merger will enable the combined company “In addition to the many technical synergies to: between high speed RF microwave and millimetre wave radio and fibre optic network electronic * Address customers’ growing needs for high designs, we see exciting growth opportunities for speed solutions in both wireless mobile backhaul wireless mobile backhaul to build out the broadband and optical networks by providing a one-stop-shop communication infrastructure. Driven by increasing with a comprehensive solution portfolio to use of bandwidth intensive smartphones and consolidate and simplify supply chains; services, the same market demands that force * Strengthen its financial performance with network operators to upgrade their optical estimated post-merger consolidated cash of about equipment from 10Gb/s to 40Gb/s and 100Gb/s and $16 million after payment of closing expenses and next generation 400Gb/s, force operators to severance, as well as enhance revenue and deliver upgrade their mobile backhaul equipment to higher operational cost savings beginning in 2011, frequencies into the 71 to 95GHz E-band to support reaching approximately $1 million per quarter in the increased bandwidth generated from cellular 2012; networks.” * Strengthen the combined company’s high speed design capabilities in both point to point radio “We have a proven track record of successfully and optical networks while providing advanced and integrating acquisitions. As with all transactions low cost assembly, testing and production through based upon our initial 2007 Strategic Plan of Endwave’s facility in Thailand; inorganic and organic growth, this merger with * Leverage GigOptix’s high speed broadband Endwave is the next step in our long-term vision of ICs, mixed signal technologies, and Thin Film building the industry’s premier supplier of front end Polymer on Silicon (TFPS) technology and solutions for high speed optical and microwave RF Endwave’s MLMS system-on-chip technology to communication links, based on solid financial further increase the level of integration of electro- foundations,” said Avi Katz. 102 www.compoundsemiconductor.net March 2011 RF Electronics ♦ news digest “We look forward to furthering our leadership conditions and regulatory approvals, as well as the position as the only pure play provider of electronic approval of the merger by Endwave’s stockholders. devices for high-speed fiber-optic and wireless The merger is expected to close during the second communications covering all applications, all quarter of 2011. speeds and all distances. Adding Endwave’s products and manufacturing capabilities to the A PowerPoint presentation has been posted on the GigOptix catalogue will further simplify our Web site of both companies, detailing the customers’ supply chain as we become the one- transaction rationale, motivation and prospects of stop shop for solutions that address the demands of the merger between GigOptix and Endwave. both the optical core and the mobile backhaul networks. The combined company will have a Key Management and Board of Directors strong balance sheet with about $16 million of cash, a significant revenue base and together with the Katz will maintain his positions as Chairman of the optimization of the sales, marketing, and operations Board of Directors, CEO and President of the teams we have a clear short term path to combined company. Curt P. Sacks, the current Chief profitability.” Financial Officer of Endwave, will serve as the Chief Financial Officer of the combined company. Andrea Commenting on the merger, John Mikulsky, Betti-Berutto, the current Chief Technology Officer Endwave’s President and CEO stated, “The merger of GigOptix, will serve as the Chief Technology of Endwave and GigOptix is an ideal combination of Officer of the combined company. technology, opportunity and vision. As a combined company, I believe we can effectively build upon our Other key executives from both companies will technology leadership and success for a strong and serve on the management team. GigOptix’s new exciting future. Together, we can deliver the most Board of Directors will consist of all five existing extensive and comprehensive product portfolio in GigOptix directors and two directors that will be the industry, providing customers with the highest recommended by the Endwave Board of Directors, quality yet cost-effective technology solutions. The subject to the approval of the GigOptix Chairman of Endwave team and I look forward to working with the Board, one of which will be Mikulsky. Dr. Katz and his team to achieve the next generation of success for the combined company.” GigOptix’s fourth quarter revenue is expected to be above $8.0 million, representing an increase of Under the terms of the merger agreement, all more than 10.0 % compared to the third quarter, outstanding shares of Endwave common stock, and exceeding the firms previously stated guidance including those issuable upon settlement of of a 7 to 10 % increase. Adjusted EBITDA (defined outstanding restricted stock units, and outstanding as income or loss from operations net of in-the-money Endwave stock options, will be depreciation, amortization, stock-based converted into shares of GigOptix common stock compensation expense and restructuring expenses) such that immediately after the merger, such shares is estimated to be above $1.1 million, an increase of represent approximately 42.5% of all outstanding approximately $0.3 million over the third quarter of GigOptix common stock. Based on the number of 2010. For the full year 2010, revenue is expected to shares of Endwave and GigOptix common stock be $26.9 million, an approximate 81.2 %increase outstanding as of January 31, 2011, approximately over 2009. Adjusted EBITDA for 2010 is 9.1 million shares of GigOptix common stock will be approximated to be $1.9 million. Cash and issued to holders of Endwave common stock, investments as of December 31, 2010 are registered stock units and stock options. The estimated at $4.3 million. issuance of shares will be made pursuant to an effective Registration Statement on Form S-4 to be Endwave expects fourth quarter revenue to be $4.1 filed shortly with the Securities and Exchange million, consistent with the prior quarter and in line Commission. GigOptix will continue its best efforts with previous expectations for the quarter. Adjusted to list GigOptix common stock on NYSE Amex or EBITDA for the fourth quarter is estimated to be a another national securities exchange. loss of $1.8 million. For the full year 2010, revenue is expected to be $16.7 million, an approximate The transaction is subject to customary closing 14.3 % decrease over 2009. Adjusted EBITDA for March 2011 www.compoundsemiconductor.net 103 news digest ♦ RF Electronics 2010 is estimated to be a loss of $6.7 million. Cash “RFMW established sales offices in the U.K., and investments as of December 31, 2010 are Germany, and Italy at the beginning of 2011, estimated at $23.5 million. and the TriQuint product line helps ensure our successful start in Europe. Our goal is to expand TriQuint’s design in opportunities and to provide a high level of customer support to TriQuint’s current RFMW & TriQuint Team up customers,” he concludes. to Provide RF Facilities in EMEA TriQuint Multi-Mode PA TriQuint says this agreement expands and builds Powers Qualcomm’s 3G/4G upon the highly successful relationship that the two companies have had in North America since 2005 Chipset and in Israel since 2010. The GaAs based power amplifier (PA) improves performance and lowers WCDMA and EDGE RFMW and TriQuint Semiconductor have signed a system cost in mobile devices. distribution agreement for Europe, the Middle East, and Africa (EMEA) which became effective January TriQuint Semiconductor, an RF front-end product 31, 2011. manufacturer and foundry services provider, has announced the availability of its first Multi-Mode TriQuint is a leading manufacturer of high Power Amplifier (MMPA) module developed for performance components for communications Qualcomm’s 3G/4G chipset solution. applications. RFMW specialises in distributing RF and microwave components and component- The TQM7M9023, a member of the TRIUMF engineering support. Module family, combines with TriQuint’s TRITIUM PA-Duplexer Module family to offer a complete RF “We are excited about this expanded relationship system solution for smartphones and other mobile with RFMW,” said Todd DeBonis, VP of Sales and devices. Strategic Development for TriQuint. “Capitalising on their familiarity with our products and target customer base, they are able to recognise opportunities and engage customers early in the design process through their Component Engineering and product management skills. RFMW has the expertise and resources to cover customers from small development groups up to OEMs and contract manufacturers. This agreement expands and builds upon the highly successful relationship that the two companies have had in Tim Dunn, VP and General Manager of Mobile North America since 2005 and in Israel since 2010.” Devices at TriQuint noted, “The TQM7M9023 is an important addition to our product portfolio. It Joel Levine, president of RFMW, says, “Teaming integrates WCDMA functionality around our core with TriQuint in Europe allows us to offer our competence of GSM/EDGE power amplifiers while customers more of the world’s best RF/microwave providing customers a flexible, high performance semiconductors, filters and integrated circuits. platform solution to meet the increasing band TriQuint’s focus on components for communications count combinations in 3G/4G handsets. Our ability applications matches perfectly with RFMW’s to integrate passive and active devices into high focus on serving customers in diverse markets performance system solutions continues to propel who require a wide range of RF/microwave TriQuint’s value in the smartphone market.” components.” 104 www.compoundsemiconductor.net March 2011 Lasers ♦ news digest TriQuint says its MMPAs provide several key for smartphone applications. The new TRITIUM benefits to mobile device vendors, in particular, PA-Duplexers will be sampling in the second half of decreased overall radio solution size to enable 2011. a greater feature set in a smaller form factor. It has also simplified PCB routing for improved performance and design cycles and a reduction in BOM count that improves manufacturing efficiency. The combination of the MMPA and Band 2 and Lasers Band 5 TRITIUM modules offers a flexible and simplified RF solution that can reduce mobile device engineering and development time. Civcom Reveals “Industry’s The firm’s CuFlip technology enables a compact 5.0 First” Integrated 40Gbps x 7.5mm footprint in the TQM7M9023. The MMPA integrates Quad-band GSM/EDGE functionality 300PIN Tunable Transponder with WCDMA Bands 1 & 8 into a single package. Building on TriQuint’s leadership in the EDGE The latest addition to the firm’s “Free Light” Line market, the MMPA can provide improved system of Products delivers high performance optical performance and lower overall cost by replacing transmission using the DPSK modulation format three discrete power amplifier modules and and is InP based. associated matching components. Civcom, a developer and manufacturer of The TQM7M9023 is a fully integrated MMPA and optoelectronic components and modules, has includes a GSM/EDGE power amplifier, WCDMA unveiled a new DPSK tunable 40G transponder. power amplifiers, high performance coupler, regulatory circuitry and matching components. It The latest device complements its 10Gbps Free does not require an external DC/DC converter Light family of tunable NRZ and RZ transponders. or complicated band switches, thus providing customers the best RF performance at maximum Civcom’s 40Gbps 300PIN TRX module will be output and backed-off power levels for both data made available in two different packages. The and voice applications, respectively. “Small Form Factor” module is 5” x 5” and features standard DPSK modulation format and optional The TQM7M9023 is now sampling and is expected integration with an EDFA. The “Standard MSA” to ramp into production by mid 2011. device is 7” x 5” and features integrated tunable DCM and EDFA functionality. The Band 2 TQM61605x and Band 5 TQM66605x TRITIUM PA Duplexers were designed to support the MMPA. TriQuint integrates high-performance BAW and SAW duplexer capabilities with low current consumption power amplifiers to customize traditional components for optimal performance. The latest TRITIUM PA-Duplexers are approximately 50% smaller in size compared to the TRITIUM family that shipped over 200 million units in 2010. The modules allow multi-mode CDMA and WCDMA operation, enabling customers to leverage a single product across multiple platforms. Each module contains a Flip Chip BiHEMT power amplifier die, achieving current consumption for maximum talk-time and thermal efficiency critical “We are proud to introduce the industry’s first March 2011 www.compoundsemiconductor.net 105 news digest ♦ Lasers integrated 40Gbps DPSK transponder, which is control over the range of 95channels at 40nm built specifically to address the challenging market in standard set by the 50-GHz International demands for additional network capacity,” stated Telecommunication Union Telecommunication Yair Itzhar, VP of Worldwide Sales and Marketing at Standardization Sector (ITU-T). Civcom. The monolithically integrated single chip consists “By integrating our tunable optical dispersion of a tunable laser array, a Mach-Zehnder intensity compensation component within the module, modulator and a Mach-Zehnder phase modulator. manufacturers can effectively increase dispersion Mitsubishi Electric claims the three functional chips tolerance of the transponder while reducing overall are monolithically integrated into one and is an cost.” industry first. Civcom’s TRX DPSK module increases dispersion The tunable laser array wavelength can be tolerance from the standard ±40ps/nm to as high controlled between 1572 nm and 1612 nm. The RZ as ±640ps/nm. The introduction of integrated EDFA Mach-Zehnder modulator modulates the intensity increases the dynamic range to 20dB. of output power and the DQPSK Mach-Zehnder modulator modulates the signal phase. The transponder module, which is compatible with the 300PIN MSA standards and I2C standards, The chip’s dimensions are 9.6 x 0.75mm, less than uses a widely tunable laser covering the entire one hundredth of the size of conventional chips. C-Band. The module’s volume, including the chip, can be minimised to less than one third of the size of Civcom will participate at OFC/NFOEC 2010 Trade conventional modules. The chip covers 95 channels Show, Booth #909 (23-25 March, 2010) San Diego, of the 50 GHz ITU-T grid in L-band from 1572nm to CA, USA. 1612nm In the future, Mitsubishi Electric plans to enhance the performance of high power, low consumption Mitsubishi Electric Develops and clear optical waveforms. The company also plans to develop a light source for C-band from First Monolithically 1530 nm to 1570 nm. Integrated Laser Diode for Transmission volume over optical communication 43Gbps networks is rapidly increasing. The densely spaced wavelength division multiplexed channels, higher The diode which is suitable for 43Gbps RZ-DQPSK bit rate transmission and multi-level formats transmission has an InP-based modulator which such as DQPSK are in demand for long distance effectively minimises device size and power transmission. Previously, it was common for consumption. transmission device manufacturers to use several different chips such as the LiNbO3 Mach-Zehnder Mitsubishi Electric Corporation says it has modulators and the tunable lasers. developed the world’s first fully monolithically integrated laser diode for use in transmission However, the device size is several centimetres devices that transmits large date volumes between or more in length and requires relatively large metropolitan areas. driving power. The fully monolithic integration and InP-based modulator effectively minimize device Operating at 43 giga-bits per second (Gbps), it size and power consumption. Mitsubishi Electric uses a method called Return to Zero Differential developed for the first time a 40G RZ-DQPSK Quadrature Phase Shift Keying (RZ-DQPSK). transmitter monolithically integrated with a tunable Distributed Feed-Back (DFB) laser array and Mach- Consisting of a tunable laser array, an RZ Mach- Zehnder modulators. Zehnder modulator and a DQPSK Mach-Zehnder modulator, this new laser diode achieves tuning 106 www.compoundsemiconductor.net March 2011 Lasers ♦ news digest Alfalight Announces Thunderline-Z Introduces Strategic Partnership with In- Laser Sealing Services Q-Tel The laser welders use a combination of continuously variable laser power and pulse The investment should advance developments shaping to achieve secure welds between lids and of Alfalight’s laser technology for use in national package housings. security. Thunderline-Z, a supplier of feedthrus and hi-rel Alfalight, a developer of high-performance laser packages for the RF/microwave industry, has diodes and handheld infrared and visible laser announced its new laser services for hermetic systems, has announced a strategic investment and sealing of high-frequency devices, components and technology development agreement with In-Q-Tel subassembly packages. (IQT). By employing the precise control of high-power IQT is an independent strategic investment firm that lasers, including advanced power ramping identifies innovative technology solutions to support and pulse-shaping techniques, Thunderline-Z the missions of the U.S. Intelligence Community. provides hermetic seals for both standard and custom packages including package designs that This partnership advances Alfalight’s development incorporate posts or pedestals for stability. of high-performance, man-portable military laser systems. The agreement builds upon Alfalight’s These new laser welding services are made established core semiconductor laser technology, possible by a major investment in a pair of high- which includes high efficiency, high brightness, and power industrial-grade lasers from Miyachi Unitek. wavelength stabilisation, combined with advanced Thunderline-Z acquired two new Nd:YAG systems, electro-optics and integrated control methodologies, models LW150A and LW500A. The LW150A, with to deliver mission-critical solutions to IQT’s 150-W average power and up to 7-kW peak power, customers. is being used for component attachment within packages, while the higher-power LW500A, with “Alfalight’s proven high-performance diode laser 500-W average power and 7.5-kW peak power, is technology integrated with novel electro-optics the workhorse system for sealing lids to packages provides a uniquely valuable capability for our within a controlled glove box atmosphere. government partners,” said William Strecker, Executive VP of Architecture & Engineering and CTO of IQT. “Our strategic investment in Alfalight will accelerate the development and availability of its products and technologies to both public and private sectors.” “Our partnership with In-Q-Tel enables the expansion of Alfalight’s technologies into important governmental applications,” said Mohan Warrior, President and CEO of Alfalight. “We are proud to support the mission of IQT by providing ground- breaking new products to better serve the intelligence and defence communities.” Compared to conventional solder sealing or seam sealing approaches, laser welding forms a robust, consistent metal-to-metal seal around the perimeter March 2011 www.compoundsemiconductor.net 107 news digest ♦ Lasers of a package. A laser-welded package maintains Professor Theodore Moustakas (ECE) inspecting hermeticity in the most demanding environments, the growth of nitride-based semiconductor including Class S (space-based) applications. materials. Standard hermetic seals are performed in a To develop this unprecedented laser technology, nitrogen/helium environment. Moustakas and two co-investigators, Associate Professor Roberto Paiella (ECE) and Assistant The laser welders precisely control the optical Professor Luca Dal Negro (ECE) will fabricate UV power applied to a package and a lid to form a laser materials and component devices; Applied consistent, repeatable seal. They use a combination Physics Technologies and the Jet Propulsion of continuously variable laser power and pulse Laboratory will design miniature electron guns to shaping to achieve secure welds between lids and pump the laser, and Photon Systems, the prime package housings while working around critical contractor, will integrate everything into a prototype circuit paths. sized below one cubic inch. “We plan to make a laser structure that, when bombarded with an electron beam, produces pairs of electrons and holes (positively charged Boston University Awarded particles), which recombine and produce the UV light,” said Moustakas. “DARPA chose us because $1.5 Million to Develop we have produced aluminium gallium nitride alloys Handheld UV Laser in which up to 68 % of those electron/hole pairs are converted into light, a conversion efficiency of about DARPA is funding the project to develop an 1,000 times that of materials produced by other AlGaN laser for use in a wide range of defence, research groups.” commercial, chemical and biological applications. Using an atom-by-atom assembly technique called Theodore Moustakas (ECE) has received a $1.5 molecular beam epitaxy (MBE), the ECE research million, two-year subcontract from the Defence team will produce the core laser material, AlGaN, Advanced Research Projects Agency (DARPA) and then construct component devices from to help develop a handheld, electron-beam multiple layers of the material. The researchers will pumped semiconductor laser that would be the evaluate the materials by directing electron beams first to operate within the ultraviolet region of the at them in the lab. electromagnetic spectrum. In parallel with this project, Moustakas is working Because of its ultra-low emission wavelength and on a separate grant from NASA to develop a similar compact size, such a laser could be exploited for a laser to perform chemical analyses of soil samples wide range of defence and commercial applications, on future Mars expeditions. He is also advancing including non-line-of-sight communication in dense visible and ultraviolet LEDs and lasers for solid- urban areas and other military theatres, via airborne state white lighting, water and air sterilization, and particulates that propagate the signal; identification identification of biological and chemical agents; and of biological and chemical substances used in indium gallium nitride “quantum dots” that boost potential terror attacks; and point-of-care chemical solar cell efficiency. analyses of blood and other bodily fluids. 108 www.compoundsemiconductor.net March 2011 Lasers ♦ news digest But the researchers pointed out that marrying III-V nanolasers on Silicon III-V with silicon to create a single optoelectronic Pave Way for On-Chip chip has been problematic. For one, the atomic structures of the two materials are mismatched. Photonics “Growing III-V semiconductor films on silicon is like This technique may provide a powerful and new forcing two incongruent puzzle pieces together,” avenue for engineering on-chip nanophotonic said study lead author Roger Chen, a UC Berkeley devices such as lasers, photodetectors, modulators graduate student in electrical engineering and and solar cells. computer sciences. “It can be done, but the material gets damaged in the process.” Engineers at the University of California, Berkeley, have found a way to grow nanolasers directly onto a silicon surface. This achievement could lead to a new class of faster, more efficient microprocessors, as well as to powerful biochemical sensors that use optoelectronic chips. “Our results impact a broad spectrum of scientific fields, including materials science, transistor technology, laser science, optoelectronics and optical physics,” said the study’s principal investigator, Connie Chang-Hasnain, UC Berkeley professor of electrical engineering and computer sciences. The increasing performance demands of electronics have sent researchers in search of better ways to harness the inherent ability of light particles to carry far more data than electrical signals can. Optical interconnects are seen as a solution to overcoming the communications bottleneck within and between computer chips. The unique structure of the nanopillars grown by UC Berkeley researchers strongly confines light in a tiny volume to enable subwavelength nanolasers. Images on the left and top right show simulated electric field intensities that describe how light circulates helically inside the nanopillars. On the bottom right is an experimental camera image of laser light from a single nanolaser. (Courtesy Connie Chang- Shown is a schematic (left) and various Hasnain Group) scanning electron microscope images of nanolasers grown directly on a silicon surface. Moreover, the manufacturing industry is set up for The achievement could lead to a new class of the production of silicon-based materials, so for optoelectronic chips. (Courtesy Connie Chang- practical reasons, the goal has been to integrate Hasnain Group) the fabrication of III-V devices into the existing infrastructure, the researchers said. Because silicon, the material that forms the foundation of modern electronics, is extremely “Today’s massive silicon electronics infrastructure deficient at generating light, engineers have turned is extremely difficult to change for both economic to III-V semiconductors to create light-based and technological reasons, so compatibility with components such as LEDs and lasers. silicon fabrication is critical,” said Chang-Hasnain. March 2011 www.compoundsemiconductor.net 109 news digest ♦ Solar “One problem is that growth of III-V semiconductors “This research has the potential to catalyze has traditionally involved high temperatures – 700 an optoelectronics revolution in computing, degrees Celsius or more – that would destroy communications, displays and optical signal the electronics. Meanwhile, other integration processing. In the future, we expect to improve the approaches have not been scalable.” characteristics of these lasers and ultimately control them electronically for a powerful marriage between The UC Berkeley researchers overcame this photonic and electronic devices.” limitation by finding a way to grow nanopillars made of InGaAs onto a silicon surface at the relatively The Defence Advanced Research Projects Agency cool temperature of 400 degrees Celsius. and a Department of Defence National Security Science and Engineering Faculty Fellowship helped “Working at nanoscale levels has enabled us to support this research. grow high quality III-V materials at low temperatures such that silicon electronics can retain their Further details of this work have been published functionality,” said Chen. online in the paper “Nanolasers grown on silicon” by Roger Chen, Thai-Truong D. Tran, Kar Wei Ng, The researchers used metal-organic chemical Wai Son Ko, Linus C. Chuang, Forrest G. Sedgwick vapor deposition (MOCVD) to grow the nanopillars and Connie Chang-Hasnain, in Nature Photonics, on the silicon. “This technique is potentially mass published online on 06 February 2011.doi:10.1038/ manufacturable, since such a system is already nphoton.2010.315 used commercially to make thin film solar cells and light emitting diodes,” said Chang-Hasnain. Once the nanopillar was made, the researchers showed that it could generate near infrared laser light at a wavelength of about 950 nanometres Solar at room temperature. The hexagonal geometry dictated by the crystal structure of the nanopillars RFMD Expands Portfolio with creates a new, efficient, light-trapping optical cavity. Light circulates up and down the structure Commercial Solar Cells in a helical fashion and amplifies via this optical feedback mechanism. The firm claims it has achieved milestones that integrate GaAs and InGaP PV junctions using its The unique approach of growing nanolasers directly standard six-inch semiconductor equipment. onto silicon could lead to highly efficient silicon photonics, the researchers said. They noted that the RF Micro Devices, a designer and manufacturer of miniscule dimensions of the nanopillars – smaller high-performance RF components and compound than one wavelength on each side, in some cases semiconductor technologies has successfully – make it possible to pack them into small spaces achieved another significant performance with the added benefit of consuming very little milestone related to the commercialisation of high- energy. performance photovoltaic (PV) cells. “Ultimately, this technique may provide a The firm has fabricated dual-junction PV cells that powerful and new avenue for engineering on- integrate GaAs and InGaP PV junctions using its chip nanophotonic devices such as lasers, standard six-inch semiconductor equipment. The photodetectors, modulators and solar cells,” said successful fabrication of the dual-junction PV cells Chen. clears the way for RFMD to develop triple-junction structures, with the ultimate goal of developing “This is the first bottom-up integration of III-V a commercially viable and high volume-capable nanolasers onto silicon chips using a growth compound semiconductor-based process for high- process compatible with the CMOS (complementary performance PV cells. metal oxide semiconductor) technology now used to make integrated circuits,” said Chang-Hasnain. Bob Bruggeworth, president and CEO of RFMD, 110 www.compoundsemiconductor.net March 2011 Solar ♦ news digest said, “RFMD is very pleased with the world-class performance of our dual-junction cells. With this Kurt J. Lesker ships Thin achievement, RFMD is demonstrating we possess Film Vacuum Deposition the critical technologies to produce a low-cost PV product with competitive solar cell conversion Cluster Tool to NRL efficiency, supported by the quality, reliability, and volumes that characterise the cellular handset The cluster tool will create advanced material market.” libraries utilised in novel photovoltaic applications, as well as other applications. In 2009, RFMD announced it had entered into a cooperative agreement with the U.S. Department Kurt J. Lesker Company recently shipped a multi- of Energy’s National Renewable Energy Laboratory technique, production grade cluster tool to the (NREL) for the purpose of developing a production Naval Research Laboratory in Washington, DC. capable process technology for high-performance PV cells. Various stations of the cluster tool operate in high and ultra high vacuum and make use of advanced The dual-junction achievement and associated physical vapour deposition (PVD) processes, performance characteristics are consistent with including magnetron sputtering, electron beam and results achieved by NREL in their development thermal evaporation, and ion assisted deposition for of Inverted Metamorphic Multi-Junction (IMM) film modification. technology. NREL’s technology has demonstrated one of the world’s highest reported solar cell These processes will create advanced material conversion efficiencies, at 40.8 %, and continued libraries utilised in novel photovoltaic applications, substantial improvements in efficiency are as well as other applications. There is capability anticipated. to add analytical tools for in-situ thin film analysis including XPS, Auger, and other advanced surface RFMD’s dual-junction achievement was realised and interface measurement techniques. using the Company’s existing manufacturing capabilities and robust supply chain, which are This tool further establishes Kurt J. Lesker optimised for high volume, low cost, reliability and Company as a leading supplier of thin film performance. The conversion efficiency achieved equipment to the solar and photovoltaic cell R&D across RFMD’s six-inch wafers was claimed to be community. exceptionally uniform, enabling high device yields and tight distributions in CPV product performance. RFMD’s development efforts related to a compound Solyndra Closes $75 Million semiconductor-based process for PV cells are Credit Facility broadly applicable across technologies, including IMM as well as conventional triple-junction The new investment will fund rapid CIGS solar Germanium-based CPV devices. RFMD anticipates module manufacturing and sales growth. When multiple opportunities related to PV cells and is fully ramped, the new facility’s annual production engaged with CPV system integrators and solar cell capacity will reach 300MW per year. module manufacturers. Solyndra, a manufacturer of cylindrical solar photovoltaic (PV) systems for large industrial and commercial rooftops, has closed a new $75 million secured credit facility underwritten by existing investors. The proceeds from the financing will be used to support Solyndra’s working capital requirements, accelerate the Company’s ongoing cost reduction activities and execute its expanded channel and March 2011 www.compoundsemiconductor.net 111 news digest ♦ Solar segment sales and marketing strategy. Ascent Solar 150MW CIGS “Solyndra has excellent marketplace momentum, project funding raised by with record installations of our product in the fourth quarter and annual revenues exceeding $140 $275 Million million last year,” said Brian Harrison, Solyndra’s president and CEO. The U.S. DOE is supporting Ascent’s FAB3 project which involves the construction of a manufacturing “With strong acceptance of our 200 Series product, facility to address the potentially large BIPV and we are seeing growth in the U.S. and markets BAPV markets worldwide. throughout Europe. We have recently reached a number of significant milestones, including the Ascent Solar Technologies, a developer of flexible shipment of nearly 100 megawatts of panels, the CIGS thin-film solar modules, has been notified completion of more than 1,000 installations in by the U.S. Department of Energy (DOE) Loan 20 countries and the announcement of our PV Guarantee Programs Office (LGPO) that Ascent’s greenhouse solution.” loan guarantee application for its proposed 150MW FAB3 project has been selected to advance to the The company’s construction of its new, world- LGPO’s due diligence phase of review. The project class manufacturing and customer demonstration has an approximate value of $375 million, $275 facility is complete. The 300,000 square foot project million of which would be under the loan guarantee was completed ahead of schedule, employing program. approximately 3000 construction workers. “We are pleased that the Department of Energy has Installation of the remaining production tools occurs selected us for advancement of our loan guarantee in 2011 and will bring Solyndra’s annual production application for our FAB3 manufacturing facility to run rate to approximately 200 MW per year by the due diligence stage,” stated Farhad Moghadam, year’s end. When fully ramped, the new facility’s President and CEO of Ascent Solar. “FAB3 will bring annual production capacity will reach 300MW per together our unique approach to manufacturing year. The new facility will also enable Solyndra to flexible lightweight modules with the capacity to manufacture products with an installed system cost- address the potentially large BIPV and BAPV of-goods sold (COGS) of approximately $2 per watt markets worldwide.” in the first quarter of 2013, which is expected to be highly competitive with all other technologies. With the selection for due diligence, the LGPO is initiating discussions with Ascent regarding “We are confident that with this round of funding detailed due diligence, the negotiation of terms and and the continued support of our existing investors conditions of a potential loan guarantee, National we are on track to be cash flow positive at the end Environmental Policy Act (NEPA) compliance and of this year,” continued Harrison. “Solyndra’s fast all other issues necessary for the LGPO to consider and easy to install panels are a proven and scalable the issuance of a conditional commitment and, solar solution, ideal for rooftop applications. Today potentially, a loan guarantee for the FAB3 Project. we are demonstrating competitive ’all in’ pricing, strong ROI and economics for rooftop owners, and Ascent’s FAB3 project contemplates the many enthusiastic new and repeat customers.” construction of a new 150MW annual nameplate capacity manufacturing facility for production of The new financing also included the restructuring Ascent’s flexible, monolithically integrated thin- of the Company’s outstanding indebtedness. film copper-indium-gallium-diselenide (CIGS) Solyndra’s existing convertible notes have been photovoltaic modules. FAB3 will leverage exchanged for new notes and the U.S. Department technology advances from Ascent’s existing of Energy which provided a loan guarantee agreed manufacturing facilities and will focus on large- to certain loan modifications including an extension volume markets such as building applied PV of the amortization period. Together with the existing (BAPV) and building integrated PV (BIPV) indebtedness, the new credit facility is secured by applications. all assets of the Company. 112 www.compoundsemiconductor.net March 2011 Solar ♦ news digest The LGPO’s advancement of Ascent’s loan new role, which will help drive the success of Global guarantee application to the due diligence review Solar and the overall BIPV market.” stage is not an assurance that the FAB3 project will be offered a term sheet or approved for a Prior to his appointment as CTO, Schoop was the conditional commitment by LGPO. director of Global Solar’s R&D department where he helped the Company improve cell efficiency, extend The due diligence process may be terminated by its long term reliability and uncover more cost- the DOE at any time if it is determined that the effective deposition techniques for cell production. project is unlikely to meet LGPO’s requirements, Schoop also helped develop Global Solar’s state-of- which include statutory and regulatory requirements the-art manufacturing facility in Tucson, Arizona. and DOE’s policies, procedures and financial requirements. In order to qualify for appropriated “Global Solar is making major business and credit subsidy under Section 1705 of Title XVII, technological strides in renewable energy FAB3 will be required to commence construction technology that improves flexible solar solutions prior to financial closing, which financial closing and provides a BIPV backbone for the building and must occur on or before September 30, 2011. roofing industry,” said Schoop. “With Global Solar’s Selection of the FAB3 project for due diligence unique sustainable and flexible BIPV solutions for review is no assurance that the review process can rooftops, we are at the cutting edge of the emerging be completed in that timeframe. BIPV era. I am honoured to be a part of this exciting and important venture.” Prior to joining Global Solar, Schoop was a senior Global Solar Energy Expands scientist with American Superconductor in Boston, Executive Team Massachusetts where he scaled processes and equipment from the R&D stage up to production for The CIGS solar module manufacturer has thin-film superconducting wire. He has been active appointed experienced thin-film solar researcher in the thin-film industry and academia for more than Urs Schoop to spearhead Innovations in flexible 15 years. solar solutions for the building Industry. Global Solar Energy, a manufacturer of high- GT Solar Receives $41.6 efficiency Copper Indium Gallium diSelenide (CIGS) solar material and an emerging leader in building Million Order integrated photovoltaics (BIPV), has appointed Urs Schoop as the Company’s new chief technology The order for sapphire crystallisation furnaces is officer (CTO). from a new Asia-based customer. As CTO, Schoop will leverage his extensive GT Solar International, a global provider of sapphire expertise in the research and development of CIGS and silicon crystalline growth systems and materials solar cell production in order to direct the successful for the solar and LED and markets, has received an execution of Global Solar’s technology roadmap. order valued at over $41 million dollars. “Dr. Schoop’s position as Global Solar’s CTO The order is for the firm’s advanced sapphire will help launch the Company to the next level crystallisation furnaces and is GT’s fourth order of product development, and help us continue to for its sapphire crystallisation furnaces in recent be a technology innovator in the emerging BIPV months. industry,” said Jeffrey Britt, president and CEO of Global Solar. “Dr. Schoop’s extensive experience in flexible thin-film solar and large scale manufacturing is critical to advancing our engineering and technical capabilities. We look forward to benefiting from his March 2011 www.compoundsemiconductor.net 113 news digest ♦ Solar First Solar Not So Sunny with Reduced Net Sales of $610 million Quarterly net sales of the CdTe solar cell manufacturer decreased from $641 million in Q4 2009, due to decreased systems revenue and reduced module prices, partially offset by higher volume. First Solar has announced its financial results for the fourth quarter and fiscal year ended December 31, 2010. Fourth quarter 2010 net sales were $610 million, a decrease of $188 million from the third quarter of 2010, primarily due to the timing of system sales and the December implementation of 2011 pricing, GT Solar Advanced Sapphire Furnace (Photo: partially offset by an increase in volume. Business Wire) “We continue to see interest in our advanced sapphire furnace from new market entrants who are interested in producing sapphire material for high brightness (HB) LED applications,” said Tom Gutierrez, GT Solar’s president and CEO. “Our sapphire crystallisation furnace provides a scalable and reliable architecture allowing companies to quickly ramp to volume production to produce low- cost, large area sapphire substrates.” Quarterly net sales decreased slightly from GT Solar’s crystallisation process technology $641 million in the fourth quarter of 2009, due to and global support resources provide a path to decreased systems revenue and reduced module productive and profitable sapphire manufacturing prices, partially offset by higher volume. Net sales operations. The furnaces ordered by the new for the fiscal year 2010 were $2,564 million, up 24% manufacturer will initially produce 85 kilogram from $2,066 million in fiscal year 2009. boules. During its recent Q3 FY11 quarterly earnings call, GT Solar announced an enhancement Fourth quarter net income per fully diluted share to the advanced sapphire furnace that will increase was $1.80, down from $2.04 in the third quarter the output capacity to 100 kilograms per cycle. of 2010 and up from $1.65 in the fourth quarter This scalability gives customers an upgrade path of 2009. Quarter over quarter, the net income to higher levels of throughput and productivity and decrease was primarily driven by lower net sales provides a higher return on their investment. and increased expenses, partially offset by higher gross margins. Year over year, the net income increase was primarily driven by higher module production and lower module cost per watt, partially offset by reduced module average selling prices and increased expenses. Fiscal 2010 net income per fully diluted share was $7.68, up from $7.53 in fiscal 114 www.compoundsemiconductor.net March 2011 Solar ♦ news digest 2009. “This research collaboration supports LGIT’s technology roadmap and gives us yet another “In the fourth quarter the operations team executed pathway to deliver a technology by outsourcing with well, and we sold 400 MW of projects in North one of the top solar research labs in the world,” said America, positioning us to achieve our 2011 growth JinWoo Lee, a research scientist at LG Innotek who goals,” said Rob Gillette, CEO of First Solar. “We is working with IEC. have good demand visibility in 2011 and a broader geographic reach, which gives us confidence in our The UD collaboration evolved after discussions ability to sell the 2 GW that we plan to produce.” between the company and IEC representatives during the past year and reciprocal visits by For 2011, First Solar is updating guidance as engineering staff from each of the institutions, said follows: William Shafarman, a scientist at IEC who also has an appointment in the Department of Materials * Net sales of $3.7 to $3.8 billion Science and Engineering at UD. * Operating income of $910 to $980 million * Earnings per fully diluted share of $9.25 to $9.75 * Includes $60 to $70 million of manufacturing start-up expenses and $15 to $20 million of factory ramp costs * Total capital spending of $1.0 to $1.1 billion * Operating cash flow of $1.0 to $1.1 billion UD collaborates with LGIT on Scientist Bill Shafarman and Peipei Xin, graduate student in materials science, conduct advanced CIGS Research research in the laboratory at UD’s Institute of Energy Conversion. LG Innotek and the University of Delaware’s Institute of Energy Conversion (IEC) will explore the In this project, Shafarman is leading a team of IEC development of a high-voltage CIGS “superstrate” researchers and two graduate students in materials solar cell structure. Unlike most CIGS solar cell science and engineering. modules which require two pieces of glass, the superstrate cell will require only one sheet of glass, The UD team will experiment with replacing the on the light-exposed side of the cell solar cell. elements in thin-film copper-indium-gallium-selenide (CIGS) solar cells with other elements to achieve The UD solar institute, a U.S. Department of Energy a higher voltage, as well as test new solar cell University Centre of Excellence for Photovoltaic designs. This work will build on promising results Research and Education, recently won a three-year, from a recently completed project at IEC supported $780,000 contract from LG Innotek (LGIT). by the Department of Energy. They will pursue pioneering research on wide band- Although most CIGS solar cell modules require two gap CIGS solar cells, which absorb less sunlight, pieces of glass, one above and one underneath but produce a higher voltage than solar cells the solar cell, one focus of the program will be to currently on the market. develop a superstrate solar cell structure, which requires only one sheet of glass, on the light- South Korean firm LG Innotek is one of the top-10 exposed side of the cell, Shafarman said. electronics manufacturers in the world. It produces LEDs used in flat-screen TVs, semiconductors for “At the end of the project, we’ll be combining these automobile motors, and camera sensors for mobile ideas to make tandem solar cells, which stack one phones, including Apple’s latest iPhone, among solar cell on top of the other. The solar cell on top other products. absorbs some of the light, and the cell underneath March 2011 www.compoundsemiconductor.net 115 news digest ♦ Solar absorbs the rest. IEC has done pioneering work US$4.7 million, an increase of 1,051%. OIBDA in this type of solar cell area since the 1980s,” was US$81.8 million, 448% higher than OIBDA of Shafarman noted. US$14.9 million in 2009. “This project will draw on IEC’s extensive Strong gross, net and OIBDA margins of 58.6%, background in thin-film solar cells and will enable us 35.3% and 53.5%, respectively, represented a to revisit research we did over two decades ago,” significant improvement over the margins of 32.3%, said Robert Birkmire, IEC director. “It’s an exciting 9.3% and 29.7% in 2009. project, and we are looking forward to collaborating with LG Innotek.” Revenue of the sapphire segment grew 250% and revenue of the solar pastes segment grew IEC also has projects under way through 161%, from US$25.4 million and US$24.5 million, competitive research grants from the Defence respectively, in 2009 to US$89.0 million for the Advanced Research Projects Agency (DARPA), sapphire and US$63.9 million for the pastes in which is the independent research branch of the 2010. U.S. Department of Defence; the U.S. Department of Energy; and several companies in the United On a quarterly basis, Monocrystal recorded all-time States and abroad. high revenues in the fourth quarter 2010. Revenue from the sapphire segment was a record $39.3 million, an increase of 50% sequentially and up 388% over comparable Q4-2009. Revenue from Monocrystal Revenues Show the pastes segment topped $20.0 million, up 13% Market for Sapphire is on Fire over Q3-2010 and 105% over Q4-2009. Overall, quarterly revenue from operations grew up to $59.3 The firm’s annual financial results showed that net million in Q4-2010, which represents sequential income rocketed by 1,051% from $4.7million to growth of 38% and annual growth of 241%. $54.1 million. Oleg Kachalov, CEO of Monocrystal commented: Monocrystal, a manufacturer of electronic materials “We are very excited about our results that far for LED and solar industries, has announced surpassed the targets we set for 2010. Both our preliminary financial results for its fiscal year ended core markets, LED and solar, have gone through December 31, 2010. significant expansion in the last year, and we were able to leverage our core competencies Consolidated revenue for 2010 totalled US$153.0 in technology and production to drive the new million, an increase of 204% compared to the strategy, add capacity and introduce innovative revenue of US$50.3 million in 2009. Gross profit products to capitalise on these market opportunities grew 452% up to US$89.6 million from US$16.2 for our growth.” million a year ago. “Our sound financial performance in 2010 was driven by very strong demands for our products from the LED and solar cell manufacturers. Increased ASPs and a shift in our product mix towards selling more polished and larger diameter products for LED were accompanied by improvements on cost reduction, running our sapphire production capacities at full steam and fostering close relationships with our customer base,” said Andrey Komkov, CFO of Monocrystal. Although Q1-2011 has brought certain stability in pricing of sapphire products for LED, the demand remains strong. New innovative LED technologies Net income shot up to US$54.1 million from that are coming to the market are expected to 116 www.compoundsemiconductor.net March 2011 Solar ♦ news digest speed up developments in the entire LED chain and systems from leading international manufacturers in the LED lighting in particular. with a similar system configuration ranged between 5.1 and 5.3 KWh/KWp/day. “We are pleased Considering the looming possibility of more rapid that our Q.SMART modules further on belong to and wide adoption of LED lighting products by the most high-performance solar modules in an commercial and industrial clients, and also that international comparison”, says Lars Stolt, Chief there is still an untapped opportunity and strong Technology Officer at Solibro, a subsidiary of players in the backlighting, the LED market may Q-Cells SE for the CIGS technology. embark on the quest to surf the next wave of its growth sooner than it is expected. In a test of crystalline solar modules, a prototype of the multi-crystalline Q-Cells solar modules Q.PRO “In addition to accelerating developments in the and Q.BASE also performed extremely well. During LED lighting space, we observe a rapid shift at the period from March 2010 to January 2011, the the forefront of LED manufacturing towards using QC-05 prototype module achieved an average larger size sapphire wafers. By providing our energy yield of 5.3 kilowatt-hours per installed competence in the sapphire-for-LED technology, kilowatt-peak per day. we at Monocrystal are very pleased to support our customers in their transition to 6- and 8-inch wafers In the specified test period, the average output to help them increase productivity and cut costs,” of systems with a similar system configuration concluded Kachalov. ranged from 4.6 to 5.1 KWh/KWp/day. On the basis of the QC-05 module, Q-Cells will launch a new generation of Q.PRO and Q.BASE modules with a higher performance in all key markets of Q-Cells SE Q-Cells CIGS Solar Modules in 2011. are Top Performers in Australia SoloPower Receives Offer of The firm’s Q.SMART CIGS solar modules achieved peak performance under extreme climate Conditional Commitment for conditions. $197 million Q-Cells SE, a provider of PV solutions worldwide, High volume manufacturing facility in Wilsonville, has once again proven the performance of its solar Oregon will increase availability of the firm’s CIGS modules. thin film solar modules and provide 500 permanent jobs. On the test field in Alice Springs, run by the renowned Australian “Desert Knowledge Australia SoloPower, a California-based manufacturer of Solar Centre” (DKASC) the Q-Cells solar module flexible thin film CIGS solar products, has received Q.SMART (CIGS thin-film technology) and a a conditional commitment from the U.S. Department prototype of the Q-Cells solar modules Q.PRO and of Energy (DOE) Loan Programs Office for a $197 Q.BASE (polysilicon technology) achieved peak million loan guarantee. performances under extreme climate conditions. The funds will support construction of a facility that, During the period from August 2010 to January when completed and at full capacity, is expected 2011, the power output of the Q.SMART (CIGS to produce approximately 400MW of thin film thin film technology) solar module was measured Photovoltaic (PV) modules annually. at a test field in Alice Springs, along with several similarly sized thin-film systems. With an average “This announcement is the latest confirmation that energy yield of 5.8 kilowatt-hours per installed when it comes to energy policy, Oregon is on the kilowatt-peak per day (KWh/KWp/day), the module right side of history,” said U.S. Senator Ron Wyden emerged as one of the leading performers from of Oregon. “The project in Wilsonville will hire the mentioned test period. The average output of hundreds of highly skilled, highly paid Oregonians March 2011 www.compoundsemiconductor.net 117 news digest ♦ Solar to manufacture the latest in renewable energy up to 260 Wp/panel, and are being sold in small technology. Oregon is already an epicentre for volumes to leading customers in five countries. renewable energy projects. A loan guarantee to help companies such as SoloPower get important projects off the ground is the right approach that will keep Oregon where it belongs – at the forefront of technology. I look forward to working with the folks Marglen Goes Solar with at SoloPower in putting Oregonians to work creating the products that represent the future of renewable Solyndra energy.” Solyndra’s thin film CIGS solar modules have been installed on the rooftop of the plastic bottle recycling plant in Georgia. Marglen Industries has recently commissioned a 95.2 kilowatt solar energy photovoltaic (PV) energy system on their rooftop in Rome, Georgia. The system was installed by Alpharetta, Georgia based United Renewable Energy, and is the largest in the Southeast to use Solyndra’s unique cylindrical CIGS thin-film solar energy system. The system was installed on the rooftop of Marglen Industries plastic bottle recycling plant. The plant SoloPower CEO Tim Harris added, “We appreciate produces a post consumer recycled PET resin and commend the DOE’s emphasis on supporting that is used in the manufacturing of sustainable innovative, clean-tech companies as a way to food-grade packaging. The plant also produces a further the goal of energy independence while polyester fibre that is used in the manufacturing of stimulating employment and helping secure our sustainable flooring and other textile products. As nation’s manufacturing base in this important part of its overall sustainable mission, Marglen has emerging industry.” emerged as a renewable energy visionary with its latest solar installation. “This backing allows us to rapidly ramp up our production and to promote the spread of clean, “We at Marglen Industries are committed to bringing distributed solar power to the rooftops and on our values and principles of sustainability to the the ground, while providing hundreds of quality forefront of our business. This solar array stands manufacturing jobs using some of the most as our responsibility for leadership in the industry, advanced technology in the world.” and our goal to bring value to our community and customers.” said Marglen’s CEO John Burnes. SoloPower announced earlier this year that it had come to an agreement to construct its first United Renewable Energy installed 476 Solyndra’s large-scale high volume manufacturing plant in rooftop solar modules, which were made in the Wilsonville, Oregon. Retrofit of the existing building U.S..They capture sunlight across a 360-degree is scheduled to begin in the second quarter of photovoltaic surface and convert direct sunlight and 2011. The factory is expected to provide direct light reflected off roof surfaces, into electricity. employment to approximately 500 people once it is running at full capacity. About 270 construction jobs The amount of electricity generated will offset will be created to build the plant, and additional jobs energy demands from 10 average American homes. are also likely to be generated in the local supply “Marglen Industries has again demonstrated their chain. commitment to the environment, while making a solid business investment,” said William Silva, SoloPower’s family of lightweight flexible modules President of United Renewable Energy. “We are are certified to both UL and IEC standards with 118 www.compoundsemiconductor.net March 2011 Solar ♦ news digest proud to install the largest Solyndra system in the facility is to be connected to the grid on February southeast for such a respected recycled materials 15, 2011. manufacturer.” “We are delighted that Nazca decided to work with Businesses all across America are reducing energy us again and I am confident our partnership will usage, cutting costs and hedging against increasing lead to several more successful installations,” said utility bills by generating clean renewable energy Clemens Jargon, President EMEA and Corporate at manufacturing plants and commercial buildings Senior VP, Solyndra. “This particular Solyndra throughout the southeast. system provides more than 77% net photovoltaic roof coverage and maximizes power density. We Available incentives like state tax credits, Federal are seeing more and more leading companies like grants, utility company rebates and tariffs, can Nazca invest in innovative and high value rooftop frequently provide companies with payback of less installations such as Solyndra solar systems.” than five years. The solar modules are designed to last 25 years or more, providing clean energy The building installation concept is exploiting a fuelled by the sun. number of Solyndra system advantages including the system’s light weight. Solyndra’s non- penetrating mounting system, with no ballast, allowed Nazca to design a system that generated Nazca Completes Second significant power without requiring additional engineering. The system, installed on a new, white French Solyndra Rooftop reflective PVC membrane, consisted of more than Installation 6800 Solyndra panels and will generate 1500 MWh/ year of photovoltaic electricity. According to the EPA The 1.2 MW rooftop PV system has been installed carbon calculator this is the equivalent of powering on the food conditioning facility “AZ Méditerranée” 662 households. in the South of France. Solyndra, a manufacturer of CIGS cylindrical photovoltaic (PV) systems for large commercial Solar Junction’s Commercial- rooftops, has announced that Nazca, has completed Ready III-V Cell Hits 41.4% a 1.2 MW solar system installation on the rooftop of a food conditioning facility in Cavaillon, in the South Efficiency of France. With results confirmed by NREL, Solar Junction The company, which conditions and imports fruit says that with double the efficiency of traditional and vegetables, wished to renovate its 17,500 photovoltaics, the CPV sector is entering a high- m² (188,000 ft2) rooftop and ensure maximum growth period. waterproofing. This is Solyndra’s second installation for Nazca in France and one of Solyndra’s largest Solar Junction, a developer of high efficiency III-V worldwide. multi-junction cells for the concentrated photovoltaic (CPV) market, has again taken a leap forward in “Having experienced the speed and efficiency of cell efficiency. the first Solyndra installation, choosing Solyndra for this second project was a no-brainer,” said Julien Just one month after achieving 40.9 % efficiency, Puel, general manager of Nazca. “Much like the the Company has now reached 41.4 % on a first installation, the excellent support and unique production cell; both milestones have been Solyndra product made it simple to install the validated by the National Renewable Energy panels and complete the project quickly.” Laboratory (NREL). For this turnkey project, developed for a third-party This significant advancement sees the company investor, Nazca completed the installation and seeing a standard commercial-ready production the grid-connection process in just 11 weeks. The cell on the horizon and moving the industry beyond March 2011 www.compoundsemiconductor.net 119 news digest ♦ Solar what was previously expected. Cyrium Technologies, a developer and supplier of concentrating III-V photovoltaic (CPV) cells, has Solar Junction is also on a short list of finalists announced the opening of an office in the Hong chosen for post-selection due diligence within the Kong SAR, China. Department of Energy’s (DOE) Loan Guarantee Program (LGP). The grant would support the Cyrium has also named Nelson Fan General commissioning of Solar Junction’s high-volume, Manager of its Asian operations. Fan is an 18-year 250-MW capacity manufacturing facility co-located veteran of the semiconductor industry, who most with its headquarters in San Jose, California. The recently was the research and development director firm expects to begin shipping commercial cells this at Traxon Technologies, of Hong Kong. year. Previously he had been a company founder and “As the debate over PV versus CPV continues, VP of engineering at CT Electronics in Hong Kong we contend that with double the efficiency of and before that held positions as general manager traditional photovoltaics, the CPV sector is entering Hong Kong manufacturing and VP of packaging a high-growth period,” said Jim Weldon, CEO of development at the Hong Kong factory of ASAT Solar Junction. “These recent NREL results reflect Holdings, a subcontract semiconductor assembly our continued commitment to efficiency gains and test company. Fan is also the holder of a and validate the advantages of our A-SLAM™ series of U.S. patents for QFN package as well as technology for the CPV sector.” numerous other semiconductor packaging related patents. Solar Junction’s cell, which incorporates the proprietary adjustable spectrum lattice-matched “Cyrium is fortunate to have attracted Nelson to (A-SLAM) technology, accelerates the multi- our team. He is an executive with demonstrated junction cell annual efficiency increase in a technical talent and superior management skills,” customer-integrable and commercial form factor. said Harry Rozakis CEO and President of Cyrium. The company’s cells come in a 5.5 mm x 5.5 mm “Having recently installed Cyrium QDEC solar aperture area form factor, the dominant cell for CPV cells in a major CPV installation in eastern China, module manufacturers, as well as in a variety of Nelson’s appointment represents the continued other larger and smaller sizes. expansion of our efforts in China and Asia.” The LGP post-selection due diligence comes a Fan’s position is designed to allow him to focus year after Solar Junction announced receiving a on working with Cyrium’s supply chain, pursuing PV Incubator contract from the DOE. The efficiency technology options and supporting Chinese and gains of its solar cells relate to the work as part of other Asian customers. the Incubator subcontract with NREL. “Nelson’s technical qualifications will make him an Once the LGP post-selection due diligence process invaluable person to expand our business in Asia is complete, Solar Junction will ramp its in-house as he will be able to help design and implement manufacturing capacity to meet the needs of CPV solutions that work both for Cyrium and our module manufacturers. customers,” Rozakis said. Cyrium Technologies, headquartered in Ottawa, Canada, is a fabless developer and supplier of Cyrium Opens Hong Kong Concentrator Photovoltaic (CPV) cells for the Office & Appoints GM for terrestrial solar energy market. Its patented nano- technology significantly increases photovoltaic Asia solar cell performance at high concentration; the firm has achieved cell efficiencies of greater than The III-V multi-junction solar cell provider has 40%. Cyrium’s QDEC (quantum dot enhanced named semiconductor veteran Nelson Fan as cell) product line is designed to deliver the highest General Manager for Asia. possible conversion efficiencies which in turn enable CPV systems companies to achieve the 120 www.compoundsemiconductor.net March 2011 Solar ♦ news digest lowest levelised cost of energy (LCOE). company is currently developing over 4000 MW of coal based thermal power capacity. It has a pipeline of 500 MW each in the solar and hydro segments. Its most advanced thermal power plant is based First Solar CdTe Modules to in Madhya Pradesh and has already achieved Power Indian Cities financial closure and acquired fuel linkage. It has multiple solar projects in advanced stages of 25 MWp of solar modules will be used for MBCEL’s construction in India, while its first solar project projects in India. outside India was completed in December, 2009 in Nordendorf, Germany. Moser Baer Clean Energy Limited (MBCEL) will procure 25 megawatts (MW) DC of First Solar’s advanced thin-film CdTe modules for its solar power generation projects. Delivery is expected to take Veeco Scores with $4.8M place by June 30, 2011. Grant for CIGS “SunShot” Lalit Jain, Chief Operating Officer, International Program Operations, MBCEL said, “We are very happy to have selected First Solar for meeting part of the The DOE funding will help Veeco speed up its requirement for our projects. MBCEL is developing efforts to commercialise multi-stage thermal over 300 MWp of solar power projects in Germany, deposition production systems used to manufacture Italy, US, Australia and India and this marks the cost-efficient CIGS Solar cells. beginning of a mutually beneficial relationship in the long run.” Veeco Instruments has been awarded $4.8 million by the U.S. Department of Energy (DOE) “We are pleased to collaborate with a leader like to accelerate the research and development and MBCEL to contribute to India’s development of commercialisation of its Copper, Indium, Gallium, clean, affordable, sustainable solar electricity, Selenium (CIGS) deposition systems. providing our advanced thin film technology and expertise in large-scale solar PV systems,” said TK The award was granted as part of the DOE’s Kallenbach, First Solar Executive VP of Marketing & “SunShot” High-Impact Supply Chain R&D Product Management. “India’s rich solar resource, Program, the goal of which is to achieve price parity unique energy needs and commitment to solar between solar electricity and fossil-based electricity energy represent a tremendous opportunity for First by the end of the decade, without additional Solar as we expand our global reach into emerging subsidies. The DOE funding will help Veeco to solar markets.” speed up its efforts to commercialise multi-stage thermal deposition production systems used to MBCEL was established in 2008 with a strategy manufacture cost-efficient CIGS Solar cells. to undertake development of renewable power projects worldwide. MBCEL is a project developer, Commenting on the Veeco award, Senator Kirsten owner and operator of solar power projects Gillibrand (D-NY) said, “Developing new, clean, globally. It is currently India’s largest solar power homegrown sources of energy is a vital part of our development company with a presence in key economic recovery.” This federal investment will international markets. MBCEL has ~ 500 MWp help drive research and development of new solar under development across multiple states in India power technology, helping make solar power more and a project portfolio of over 200 MWp in Europe efficient. By making solar power more effective to be developed by 2012. MBCEL has already and affordable over the long term, we can cut commissioned 5 MWp Solar PV project in Tamil emissions, improve our environment, lower our Nadu and 13 MWp Solar PV projects in Germany. energy bills, and create good-paying green jobs right here at home.” Based out of New Delhi, MBPPL is engaged in the development of power assets using conventional Representative Steve Israel (D-NY) stated, and non-conventional sources of energy. The “Investments in our growing clean technology March 2011 www.compoundsemiconductor.net 121 news digest ♦ Solar industry are critical to both our economic recovery Ulrich, SCE VP, Renewable and Alternative Power. and our national security. Veeco is a leader among “When we get projects of this magnitude, we make companies that are finding innovative ways to great progress toward our renewable energy goals.” produce solar technology on Long Island and across the country. This Department of Energy This contract is subject to California Public Utilities funding will bolster our efforts to compete globally Commission approval. as a clean energy leader.” “This agreement represents another important “I strongly supported Veeco’s grant application milestone toward our goal of grid parity,” said Frank because this major investment in Lowell will help De Rosa, First Solar senior VP of North American create jobs in our community by developing the Project Development. “First Solar applauds SCE’s clean energy technology that can reduce household commitment to renewable energy and looks forward energy bills while promoting reliable domestic to bringing this project to completion.” sources of power,” said Representative Niki Tsongas (D-MA). Southern California Edison is the nation’s leading utility for renewables. In 2009, SCE delivered 13.6 “Veeco is a demonstrated solar technology leader billion kilowatt hours of renewable power to its and this well deserved award will help accelerate customers, about 17 % of its total power portfolio. the R&D, integration and commercialization of their highly innovative products,” he concluded. Barrier Layer Improves CIGS Solar Cell Efficiency by 13% First Solar to provide SCE with250 Megawatts of Solar The layer works like an iron diffusion barrier and prevents corrosion and oxidation of the carrier. Photovoltaic Power Scientists at INM - Leibniz Institute for New The CdTe solar module manufacturer will be Materials have developed a barrier layer that ground-mount the panels on about 2,500 acres of separates the metal carrier from the absorber film, public land in Nevada. increasing the efficiency of metal-based CIGS solar cells. Southern California Edison (SCE) has signed a power purchase agreement with First Solar for 250 Apart from other influences, corrosion and poor megawatts AC of electricity to be generated with isolation between substrate and carrier material solar photovoltaic panels. This emission-free power cause a low efficiency in CIGS solar cells. source is the equivalent, in greenhouse gas terms, of removing 30,000 cars from the road annually. Now the scientists have developed a glass- like barrier layer which improves the solar cell The CdTe solar panels will be ground-mounted efficiency. “It works as iron diffusion barrier and on about 2,500 acres of public land near Primm, thus prevents corrosion and oxidation of the Nevada. First Solar is developing the project, carrier”, explains Peter William de Oliveira, head of named Silver State South, which will interconnect the program division. with SCE’s proposed Eldorado-Ivanpah 220-kilovolt transmission line. The project is expected to begin “At the same time, the barrier works as insulating producing electricity as early as 2014 and be fully layer and reduces unintentional electrical currents operational by May 2017. It will create about 300 from the absorber to the carrier,” he continues. Both construction jobs, and the solar panels will be functions increase the efficiency of metal-based recycled after their useful lifespan. CIGS solar cells by up to 13 %. “First Solar’s industry-leading technology makes The glass-like diffusion barrier is applied on the solar PV an excellent option for clean, emission-free metal carrier by means of the sol-gel process. It is power we can deliver to our customers,” said Marc transparent and flexible and has a thickness of only 122 www.compoundsemiconductor.net March 2011 Solar ♦ news digest a few microns. The INM scientists developed both Timothy Coutts, NREL Fellow Emeritus and founder the layer and up-scaled process. By means of dip of the Device Development Group at NREL, stated, coating and slot coating they produced foils in a DIN “This achievement elevates EPIR to the very small A3 size. The traditional roll-to-roll printing process group of solar companies and research facilities allows the production of continuous layered foils up that have reproducibly fabricated CdTe solar cells to a length of 50 metres and a width of about half a with greater than 15% efficiency. This clearly metre. validates EPIR’s expertise in CdTe solar cell growth and fabrication.” A recently published study by Lux Research confirms that the cost of goods sold for CIGS solar Timothy Gessert, Principal Scientist and Group cells will rapidly decrease over the coming years. Manager of the NREL CdTe Research Group According to this study, an increased efficiency, stated, “This is an important advancement for among other things, will contribute to a gross CdTe thin-film PV technology because it not margin of over 30 percent. only surpasses the previous best result that was published for commercial soda-lime glass by a clear margin (14.4% was the previous best result on commercial soda-lime glass), but all the layers incorporated into this new device structure are NREL and EPIR Develop consistent with present commercial manufacturing CdTe Solar Cell with 15.2% processes.” Efficiency The solar cells were fabricated using inexpensive DayStar Announces Funding commercial TEC-series glass substrates as Commitment opposed to technical-grade glass. The firm has announced entry into a $5 million EPIR Technologies has repeatedly fabricated high securities purchase agreement and has also efficiency polycrystalline cadmium telluride (CdTe) extinguished $3.6 million in debt. solar cells on commercial glass substrates. DayStar Technologies, a developer of solar According to Siva Sivananthan, founder and CEO of photovoltaic products based on CIGS thin-film EPIR Technologies, “EPIR has been collaborating deposition technology, has entered into a $5 closely with a team of scientists from National million securities purchase agreement with Socius Renewable Energy Laboratory (NREL). Together CG II, Ltd., a subsidiary of Socius Capital Group we developed a CdTe solar cell with a maximum (“Socius”). of 15.2% efficiency.” Sivananthan added, “The combination of EPIR’s expertise in CdTe materials Daystar also announced the additional and NREL’s expertise in CdTe solar cell device extinguishment of debt in exchange for shares technology has empowered us to achieve these of common stock as the company continues to excellent results in a short timeframe.” restructure its balance sheet and pursue a strategic partnership. According to Chollada Gilmore, EPIR’s CdTe Solar Cell Technical Lead, “Our champion cell efficiency DayStar’s CEO, Magnus Ryde commented, “This was officially verified by NREL at 15.2 % efficiency. flexible financing arrangement, with a proven The high efficiency was driven by a fill factor of partner in Socius Captial, will strengthen our 77.6%, which is one of the highest fill factor values balance sheet and will better position us as we ever recorded for this type of solar cell. These continue our discussions with potential strategic results are significant because our solar cells were partners. The partnerships we are pursuing, fabricated using inexpensive commercial TEC- if consummated, could include joint ventures, series glass substrates as opposed to technical- licensing agreements, contract manufacturing grade glass which is commonly used in champion agreements, a reverse merger with or an acquisition cell fabrication.” of DayStar.” March 2011 www.compoundsemiconductor.net 123 news digest ♦ Solar Under the agreement, Daystar has the right over developing solar market and includes direct a term of two years, subject to certain conditions, application of Ascent Solar’s solar modules to to require Socius to purchase up to $5 million building materials for both grid-connected and off- of redeemable Series B Preferred Stock (the grid solutions. “Preferred Stock”). With each purchase, Socius will receive two-year warrants to purchase shares of Ascent Solar President and CEO Farhad the company’s common stock valued at 35% of the Moghadam stated, “We are pleased to announce Preferred Stock amount. our agreement with SW Solarwatt. This relationship will enable integration of Ascent The exercise price of the warrants will equal the Solar’s flexible, lightweight CIGS modules in a closing bid price of the company’s common stock variety of applications, from grid-connected rooftop on the preceding day. In addition, Socius will be installations to portable power and other off-grid entitled to exercise an additional investment right stand alone solutions. We look forward to working for 60 days after each sale of Preferred Stock to with our new partners in the growing Eastern purchase common stock valued at 100% of the Mediterranean market.” amount of the Preferred Stock, at a per share price equal to the exercise price of the warrants associated with the sale of Preferred Stock. Emcore Announces DayStar also announced that it has extinguished an additional $3.6 million in debt from its balance Consolidated Revenues of sheet through the conversion to equity of certain $52.1 m convertible notes payable, as well as agreements with vendors to settle their liabilities in exchange for After a turbulent year, the company’s is looking shares of DayStar’s common stock. forward to better times with positive net cash provided by operations of $3.9 million. Ryde, commented, “We are pleased to have eliminated another $3.6 million in debt from our Emcore, a provider of compound semiconductor- balance sheet. We appreciate the continued support based components, subsystems, and systems of our vendors and other stakeholders. We have for the fibre optics and solar power markets, has nearly completed our balance sheet restructuring announced its financial results for the latest quarter. and other activities to enhance our ability to pursue strategic transactions.” Ascent Solar Signs CIGS Distribution Agreement with SW Solarwatt SW Solarwatt will market and install Ascent Solar Modules in Greece and Cyprus. Ascent Solar, a developer of flexible thin-film solar Consolidated revenue for the first quarter ended modules, has announced that SW Solarwatt will December 31, 2010 was $52.1 million, a 23% act as a Distributor of its lightweight, flexible, high- increase compared to last year. Revenues for the power thin-film CIGS modules. Fibre Optics segment were $31.8 million, a 24% increase, while the Photovoltaics segment made The modules will be used for building integrated $20.3 million. (BIPV) applications in Greece and Cyprus. The agreement with SW Solarwatt establishes Ascent Consolidated gross profit was $12.7 million, a 36% Solar’s presence within the Eastern Mediterranean’s increase compared to the same period last year. 124 www.compoundsemiconductor.net March 2011 Solar ♦ news digest During the same period, the Fibre Optics segment Business Outlook gross margin was 18.7%, a decrease from the 21.9% gross margin In the second quarter ending March 31, 2011, the Company expects consolidated revenues to be For Photovoltaics, the consolidated operating loss between $46 and $49 million. was $2.8 million, an improvement of $7.6 million, or 73%, from the $10.4 million operating loss reported in the prior year. The consolidated net loss was $3.6 million, again an improvement. This amounted to $8.5 million, or 70%, from the net loss of $12.1 First Solar CdTe Panels million reported in the FYQ1 2010. Energise Cimarron Solar Consolidated net loss per share was $0.04, an Plant in New Mexico improvement of $0.11 per share from the $0.15 net loss per share reported in the prior year and an Developed and constructed by First Solar, increase in net loss per share of $0.03 compared to the facility is among the nation’s largest solar the preceding quarter. photovoltaic plants and will provide power to Tri- State G&T. As of December 31, 2010, the Company had a consolidated order backlog of approximately The clean and plentiful sunshine of New Mexico is $57.3 million, a 20% decrease from the $71.3 now producing electricity for some 9,000 homes as million order backlog reported in the immediate the Cimarron Solar Facility has begun commercial preceding quarter. On a segment basis, the operation. At 30 megawatts, Cimarron is among the Photovoltaics order backlog totalled $36.1 million, nation’s largest solar photovoltaic plants. a 32% decrease from $52.9 million reported in the immediate preceding quarter. The Fiber Optics order backlog totalled $21.2 million, a 15% increase from $18.4 million reported in the immediate preceding quarter. Order backlog is defined as purchase orders or supply agreements accepted by the Company with expected product delivery and/or services to be performed within the next twelve months. The facility is the first resulting from the partnership The, cash and cash equivalents and restricted between Southern Company and Ted Turner cash were approximately $25.4 million and and will supply power to the member electric working capital totalled $33.6 million. For the three cooperatives of Denver-based Tri-State Generation months ended December 31, 2010, the Company and Transmission Association. generated $3.9 million in cash from operations compared with a consumption of $1.2 million of Arizona based First Solar developed and cash in the prior year. constructed the facility and will provide operation and maintenance services under a long-term The improvement in cash flow was due primarily contract. to improved operating performance and strong working capital management. With respect to “This is a key milestone for Southern Company measures taken to improve liquidity, in November as we steadily incorporate more renewables into 2010, the Company entered into a three-year $35 our energy portfolio,” said Southern Company million asset-backed revolving credit facility with Chairman, President and CEO Tom Fanning. Wells Fargo Bank, which can be used for working “Renewables, along with new nuclear, increased capital, letters of credit, and other general corporate energy efficiency, 21st century coal technology and purposes. additional natural gas, all will be crucial to meeting this nation’s growing energy demand.” March 2011 www.compoundsemiconductor.net 125 news digest ♦ Solar Fanning also noted that New Mexico, with its in the rural communities we serve, while further abundant solar resources, was an ideal location to diversifying Tri-State’s renewable resource mix.” establish the company’s first commercial-scale solar operation. The 364-acre plant site is located within the service First Solar Ups its game with territory of Tri-State member system Springer C$90million from Enbridge Electric Cooperative in Colfax County, New Mexico, and is adjacent to Turner’s Vermejo Park Ranch. The two projects will be based in Ontario, Canada and will provide 5MW and 15MW of solar energy. Southern Company and Turner Renewable Energy Construction is expected to begin in March 2011, acquired the project from First Solar in March and be completed in Q3 2011. 2010. Turner Renewable Energy focuses on the development of commercial-scale solar projects. Enbridge is to acquire two new solar energy projects from First Solar based on its CdTe thin film “We are very excited to see this project completed PV solar technology. and producing clean solar energy to power homes and businesses in New Mexico,” said Turner. The two projects-the Tilbury Solar Project and the “Large-scale solar generation is among the fastest Amherstburg II Solar Project-are both in Ontario, growing energy sources in the world, and we’re Canada, and together, have a generating capacity pleased that we can be a part of that growth.” of 20 megawatts (MW). Enbridge’s investment in the Tilbury and Amherstburg Solar Projects is Initially expected to go on line by the end of 2010, approximately C$90 million. the facility was completed in eight months and began commercial operation in early December, “Following closely on the heels of the successful nearly a month ahead of schedule. More than 300 completion of our 80-MW Sarnia Solar Project, workers were employed to construct the plant, we’re pleased to add another 20 MW of solar which uses approximately 500,000 2’x 4’ advanced generating capacity to our renewable energy thin film photovoltaic modules manufactured by First portfolio,” said Al Monaco, President, Gas Pipelines, Solar. Green Energy & International, Enbridge. “The Cimarron Solar Facility demonstrates First “We think the fundamentals of the renewable Solar’s capabilities in utility scale projects,” energy business are strong as electricity demand said Frank De Rosa, First Solar Senior VP of will continue to grow, and renewable energy is Project Development, North America. “Integrating well positioned to meet a significant portion of the technology, manufacturing, project development demand.” and engineering, procurement and construction expertise enables First Solar to be a leader in “These agreements demonstrate continued sustainable energy development.” momentum in First Solar’s project development business,” said Frank DeRosa, First Solar Senior Electricity generated by the plant will serve a 25- VP of North American project development. “We year power purchase agreement with Tri-State are very pleased to extend our relationship with Generation and Transmission Association, a not- Enbridge that began with Sarnia, and to work for-profit wholesale power supplier to 44 electric together to increase renewable energy generation cooperatives serving 1.5 million consumers across in Canada.” Colorado, Nebraska, New Mexico and Wyoming. The 5MW Tilbury Solar Project is located in Tilbury, “The Cimarron Solar Facility is another example Ontario. First Solar completed construction on this of our ability to harness and utilise the abundant project in December 2010. natural resources that are available to us in the West,” said Ken Anderson, Tri-State’s executive VP The Amherstburg II Solar Project is located in and general manager. “Working with our partners, Amherstburg, Ontario, which is about 70 kilometres we have made a significant technology investment from Tilbury. It has two separate facilities that, 126 www.compoundsemiconductor.net March 2011 Solar ♦ news digest together, total 15 MW. Construction is expected to maintenance services under long-term contracts. begin in March 2011, and to be completed in Q3 Construction of the project is expected to begin in 2011. March 2011. Under the terms of the agreements, the projects will “Amherstburg II will continue to expand Ontario’s include fixed-price engineering, procurement and supply of clean, affordable, sustainable solar construction (EPC) contracts. First Solar will also energy,” said Peter Carrie, First Solar VP of provide operations and maintenance services to Business Development for Canada. “We are Enbridge under long-term contracts. pleased to have worked with Helios Energy and look forward to bringing the project to completion Enbridge will sell the facilities power output to the this summer.” Ontario Power Authority pursuant to 20-year Power Purchase Agreements under the terms of the The Amherstburg II Solar Project will create Ontario Government’s Renewable Energy Standard between 300 and 400 construction jobs, generate Offer Program. tax revenues for various levels of government, and create economic benefits for local businesses. The Tilbury project will have a maximum capacity The project will sell its power to the Ontario Power of about 5 MW and the net area of solar panels on Authority pursuant to 20-year Power Purchase the site is expected to be around 15 acres. With Agreements under the terms of the Renewable approximately 89,000 solar panels, the firm expects Energy Standard Offer Program. an annual yield of approximately 7 million kWh (corresponding to the annual consumption of about “This project further demonstrates Ontario’s 800 homes). The project hopes to achieve CO2 leadership in renewable energy development savings of about 2,500 tonnes per year and provide and the creation of a green economy,” said Jarret 300 jobs. Stuart, Principal, Helios Energy. “We are very proud to have worked with First Solar, North America’s The Amherstburg II Solar Project, with a capacity leading utility-scale solar project developer.” peak of about 15 MW expects to provide 244,000 solar panels on 43 acres. With an annual yield of around 23 million kWh providing 2,400 homes, CO2 savings should amount to about 7,500 tonnes per Ascent Solar Signs year. The work force is expected to be between 300 and 400. Agreement with Polymeur Sun of Singapore Polymeur Sun is now an authorised reseller to First Solar Wins $15m Solar market and install Ascent Solar CIGS modules in Project Singapore and Malaysia. The CdTe solar module manufacturer has won the Ascent Solar has announced that Polymeur Sun Amherstburg II project from Helios Energy. will act as an authorised reseller of its lightweight, flexible, high-power thin-film copper indium First Solar has completed the acquisition of Helios diselenide (CIGS) modules. Energy’s Amherstburg II Solar Project, consisting of two separate facilities, which, together, total 15 The modules will be used for building integrated megawatts (MW). (BIPV), and portable power solutions in Singapore and Malaysia. Alongside this transaction, First Solar and Enbridge have entered into an agreement in which Enbridge The agreement with Polymeur Sun gives Ascent will acquire the Amherstburg II Solar Project from Solar access to multiple segments in Southeast First Solar. First Solar will continue developing the Asia’s developing solar market including direct facilities and will provide engineering, procurement application to building materials for both grid- and construction services as well as operations and connected and off-grid solutions. March 2011 www.compoundsemiconductor.net 127 news digest ♦ Power Electronics Ascent Solar President and CEO Farhad scanning and processing, and inkjet printing. Moghadam commented, “We are pleased to announce our agreement with Polymeur Sun. Linear Motor Drive This relationship will give us access to new and Aerotech’s high-power, cog-free linear motors emerging market opportunities in Southeast Asia’s drive the ACT series to accelerations of 5 g and a rapidly growing solar market. We also expect that top speed of 5 m/s, providing the ideal solution to other products in our lineup of flexible, lightweight increase throughput. The stiff mechanical structure CIGS modules such as portable power and other gives excellent dynamic performance and reduces off-grid stand alone solutions will be marketed settling times. The non-magnetic forcer coil provides through this relationship.” high force with zero cogging for smooth velocity and position control, and is ideal for applications requiring outstanding contour accuracy and smooth velocity profiling. The linear motor has zero backlash, no windup, zero friction, and outstanding system responsiveness, and the magnetic field is Power totally self-contained within the U-channel design. Many high-performance applications cannot tolerate the stray magnetic fields generated by flat motor magnet tracks. Electronics High Performance Noncontact linear optical encoders with micron- level repeatabilities are standard on all ACT series High Speed, High actuators. Either a line-driver output or amplified sine-wave output encoder is available for maximum Acceleration, flexibility. Optional factory calibration further increases standard accuracy and repeatability. Maintenance-Free Aerotech manufactures a wide range of matching drives and controls to provide a fully integrated and Alternative to Ball optimized motion solution. Screws and Belt High Reliability ACT actuators consist of noncontact linear motors Drives and encoders, making them virtually maintenance- free. As a result, there is no maintenance that is Travel ranges from 100 mm to 1.5 m, Acceleration normally associated with contacting-type systems capability up to 5 g, Velocity capability up to 5 m/s, such as ball screws or belt drives. Maximum continuous force output up to 270.7 N, Maintenance free, direct drive, zero-cogging motor Options Maximize Application Flexibility and noncontact optical linear encoder The flexible design is offered with multiple cable management and limit options to suit your needs. The ACT is a high performance, cost-effective For applications requiring a complete solution, a linear-servomotor-driven actuator that is faster cable management chain is provided. For OEM and more accurate than a ball screw or belt-drive or applications requiring user-defined cable without the costly, time-consuming maintenance management, both cable pigtail and bulkhead ball screw or belt-drives require. Because the ACT termination options are available. Moveable limits is an integrated, assembled mechanical system, allow easy adjustment of usable travel for varying it also eliminates the design complexity and applications. guesswork in choosing and assembling individual components. The ACT is ideal for applications For further information, please contact Steve including assembly, pick and place machines, McLane at 412-967-6854 (direct), or via e-mail at electronic assembly and qualification, packaging, [email protected]. vision inspection, dispensing, life sciences, image 128 www.compoundsemiconductor.net March 2011 Power Electronics ♦ news digest The ACT series data sheet is available at: http:// power JFETs are compatible with standard gate www.aerotech.com/products/actuators/act.html drive circuitry and feature a positive temperature coefficient for ease of paralleling. The voltage- controlled devices also have a low RDS(on)max, low gate charge and low intrinsic capacitance. The SJEP120R100 with an Rds(on) of 100mΩ enables extremely fast switching with no ‘tail’ current up to its maximum operating temperature of 175degC, and the SJEP120R063, with an Rds(on) of 63mOhms can enable switching losses of only 353µJ at 24A. These JFETs offer a blocking voltage of 1200V and exhibit temperature- independent switching behaviour. This latter device is being designed in by a number of Solar Inverter companies who are achieving product efficiencies of 98-99 %. SemiSouth also offers a normally-on 1200V SiC SemiSouth SiC JFET JFET (SJEP120R085) for customers who can utilise Production Line Shipping normally-on behaviour. It offers the same features as the normally-off SJEP120R100 JFET, and in 50kW Modules addition offers a higher saturation current (50A), lower on-resistance per unit area (85mΩ total), The firm’s devices include the “world’s first and the same or better switching performance. normally-off SiC JFET” targeted at solar inverters, This product is being designed in also at a number power conversion, uninterruptible power supplies of solar inverter and audio customers for high- and high temp harsh environments. efficiency or high-linearity applications. SemiSouth Laboratories, a manufacturer of silicon At 1700V, SemiSouth’s new 4A SJEP170R550 carbide (SiC) technology for high-power, high- SiC JFET delivers a higher blocking voltage efficiency, harsh-environment power management (1700V), five times lower on-resistance (550mΩ), and conversion applications, has announced that around ten times lower output capacitance (COSS it is now shipping its latest range of vertical trench = 20pF) and a gate charge (QG of 10nC) than JFETs. competing 1500V silicon power transistors. It has a maximum operating temperature of 175degC. The company says this includes the world’s first The SJEP170R550 is targeted for auxiliary flyback normally-off family of devices to handle up to 50kW power supply applications running off the high in commercial volume quantities. The company is voltage DC bus in AC Drives, UPS and Solar rapidly expanding production capacity at its state- Inverters. of-the-art SiC wafer fabrication facility in Starkville, MS, (USA). Jeff Casady, President of SemiSouth commented, “Our SiC JFETs enable the most energy efficient SemiSouth uses a vertically integrated SiC power system designs now possible for a broad proprietary and patented self-aligned JFET chip range of applications…and they are available in design enabling up to ten times smaller die size volume production. Power supplies and inverters when compared to silicon super-junction MOSFETs can now be designed to run up to 50-75 per or the latest trench IGBTs. The company also holds cent more efficiently and operate at up to four the record for the lowest 1200V power transistor to eight times higher in PWM frequency. The specific on-resistance - under 2.5mΩ/cm². reasonably higher price of the JFET can be off-set by a substantial reduction in the size and cost of The SJEP120R100, SJEP120R063 and magnetics, heat sinks and enables a smaller and SJEP170R550 Normally-OFF trench silicon carbide lighter overall solution.” March 2011 www.compoundsemiconductor.net 129 news digest ♦ Power Electronics SJEP120R100, SJDP120R085, SJEP120R063 and SJEP170R550 JFETs are available in plastic Kyma Breaks Record with TO-247 packaging and are priced in 1000 piece 300mm AlN on Silicon quantities at $12.55 for the SJEP120R100, $15.50 for the SJDP120R085, $22.87 for the Template SJEP120R063 and $9.06 for the SJEP1270R550. Kyma says its tool is the first that is capable of direct insertion into existing LED and power device production and can grow other GaN related alloys Samsung Selects Veeco such as InGaN and AlGaN. MOCVD Tool for GaN Power Kyma Technologies has commissioned its new high volume Aluminum Nitride (AlN) template Electronics manufacturing tool with the world’s first 300mm (12- inch) diameter AlN on silicon template. Veeco is looking forward to continuing to work with SAIT to commercialise this technology for The tool is suitable for high quality gallium nitride high volume manufacturing of GaN-based power (GaN) growth. electronic devices. While other large area AlN processes have existed Veeco Instruments has announced that Samsung in the market for many years, Kyma’s says its Advanced Institute of Technology (SAIT) in Korea tool is the first that is capable of direct insertion has selected its K465i Gallium Nitride (GaN) Metal into existing light emitting diode (LED) and power Organic Chemical Vapour Deposition (MOCVD) device production. These processes also grow GaN System for advanced GaN on Si research for power and related alloys such as indium gallium nitride electronics. (InGaN) and aluminum gallium nitride (AlGaN). According to William J. Mille, Executive VP of The new AlN template tool was designed and Veeco’s Compound Semiconductor Business, constructed by Bob Metzger, Kyma’s Chief “Being selected as a research partner for GaN Engineer; it incorporates many of the features on Si by SAIT is an important strategic R&D win of, as well as improvements to, Kyma’s patented for Veeco. We look forward to continuing to work and proprietary III-N Physical Vapour Deposition with SAIT to commercialise this technology for of NanoColumns (PVDNC) technology that the high volume manufacturing of GaN-based power company has used for more than 10 years. electronic devices.” Kyma initially used the PVDNC technology for its “The GaN power electronics market is expected to bulk GaN development efforts, until 2006, when grow significantly in coming years, with potential the company began supplying AlN templates to the applications in energy-efficient power conversion commercial market. Additional template substrates devices,” according to Jim Jenson, VP of Marketing such as sapphire, patterned sapphire, and silicon for Veeco’s Compound Semiconductor Business. carbide are also possible to run in the AlN process due to the system’s flexible design and Kyma’s The K465i incorporates Veeco’s Uniform long experience with PVDNC for nitride growth FlowFlange technology for excellent uniformity applications. and run-to-run repeatability. Low maintenance TurboDisc technology enables highest system “Market interest in our AlN templates has grown availability, excellent particle performance and rapidly over the last 18 months, especially in the high throughput. The K465i provides ease-of- LED sector, where significant LED improvements tuning for fast process optimisation on wafer sizes have been observed by customers using our up to 8 inches and fast tool recovery time after PVDNC AlN templates. Specific improvements maintenance. cited include: improved wavelength and brightness binning, lower defect density in the LED active region, higher device thermal conductivity, and up 130 www.compoundsemiconductor.net March 2011 Power Electronics ♦ news digest to 30% higher MOCVD system throughput,” said Ed “Our customers designing high-efficiency micro- Preble, Kyma CTO and VP Business Development. inverters for solar power applications wanted to simplify their designs without compromising system “This new tool increases our capacity 10-fold for 2”, efficiency. They were looking for a surface mount 3” and 4” wafers; enables us to address the growing device that could deliver the same performance demand for larger 150mm and 200mm diameters; they had come to expect from SiC Schottky diodes and also further raises the bar with its 300mm – zero reverse recovery losses, high frequency capability. While we acknowledge that work remains operation with a low EMI signature, and reduced to improve the deposition uniformity for 300mm operating temperatures,” explained Cengiz sizes, we are positively thrilled with the uniformity Balkas, Cree VP and general manager, Power and repeatability of the 2” through 200mm sizes and and RF. “Given Cree’s experience in developing look forward to qualification of the new tool with our high-voltage SiC power devices, the move to the customers.” surface mount D-Pak was a natural extension of our Schottky diode product line to serve this critical The company plans to demonstrate large diameter market.” AlN templates on sapphire and to release the new AlN template tool for full production in the coming “Design trends in solar power micro-inverters are weeks. requiring the use of surface mount components with smaller footprints and lower profiles,” said Kyma is a global supplier of crystalline gallium Alessandro Di Nicco, design engineer new nitride (GaN) and aluminum nitride (AlN) materials platforms, Power-One. “This enables us to both for a broad range of high performance nitride reduce the size of the inverter circuitry and lower semiconductor device applications. the cost, while maintaining reliability and high efficiency, with the eventual goal of physically The company sys the market for nitride integrating the micro-inverter into the solar semiconductor devices is expected to surpass $30B panels themselves. Cree’s new surface mount over the next decade and the market for nitride Schottky diodes represent a significant step in that based LEDs grew at almost a 100% year-over-year development.” rate in 2010 to nearly $12B. Cree C2D05120E Schottky diodes are rated for 5A and 1200V, with approximate board mounted dimensions of 6.6mm wide x 9.9mm long x 2.3mm Cree Launches First Surface high. Operating junction and storage temperature is rated for -55°C to +175°C. Mount 1200V SiC Schottky Diode The C2D05120E surface mount Schottky diodes are fully qualified and released for production use. The surface mount TO-252 D-Pak device can enable smaller, lower cost, and more efficient solar power micro-inverters. Transphorm GaN Energises Cree has announced the availability of the industry’s first commercial 1200V surface mount SiC Schottky Efficiency with $38 million diode. funding Packaged in an industry-standard surface mount The company offers a viable, commercial-scale TO-252 D-Pak, the Schottky diodes deliver the solution to energy losses associated with high- same proven performance as Cree’s TO-220 voltage power conversion and has been backed through-hole devices, with a smaller board footprint by leading venture capital firms including Google and lower profile. This can enable the design of Venture. smaller, lower cost, and more efficient solar power micro-inverters, compared to systems designed with Transphorm is redefining energy efficiency with larger and bulkier through-hole parts. efficient and compact power conversion technology March 2011 www.compoundsemiconductor.net 131 news digest ♦ Power Electronics and has emerged from stealth mode at a private Transphorm delivers custom-designed power event at Google Ventures. modules that are easy to embed in virtually any electrical system, from consumer electronics The firm announced that it has completed a $20 products, to industrial motor drives, to inverters for million Series C financing led by Google Ventures, solar panels and electric vehicles, and sells these with participation from existing venture investors modules to power equipment manufacturers. The Kleiner Perkins Caufield & Byers, Foundation company will unveil its first product at the upcoming Capital and Lux Capital. This brings the total capital APEC conference, taking place in Fort Worth, Tex. raised from all rounds to $38 million. from Mar. 6 -10, 2011. Inefficient electric power conversion results in “We recognise the need to innovate to uncover new hundreds of terawatts of lost energy across the opportunities for optimal energy efficiency,” said electrical grid, equivalent to 318 coal-fired power Toshihiro Sawa, Managing Director, Technology plants and costing the U.S. economy $40 billion a & Development Division of Yaskawa Electric year. Corporation. “The time is right to develop power conversion technologies that can cut power waste Leveraging breakthroughs in modern materials and and reduce excess heat, and Transphorm provides a world-class team, Transphorm’s ultra-efficient a viable solution today.” and cost-competitive power GaN modules eliminate up to 90 % of all electric conversion losses. From “It is imperative that power conversion efficiency HVACs to hybrids, from servers to solar panels, be increased both to cut unnecessary losses and Transphorm enables significant energy savings to save energy, but also to reduce waste heat across the grid. which has negative impact on volume, weight, cost and reliability,” said Leo Casey, CTO, Satcon “We founded Transphorm to re-imagine what Corporation. “The innovations made by Transphorm enhanced efficiency in the generation and use of offer an attractive solution to this problem.” electrical energy can do for our economy,” said Umesh Mishra, CEO of Transphorm. “Why put up with needless energy waste in every Fox Group Signs Another electrical system and device, when we can quickly License for its SiC Patents and cost-effectively design products that are inherently energy efficient. Transphorm’s next- Since Fox Group is not making silicon carbide generation power modules cut waste, increase wafers or devices, it wants the public to benefit from efficiency, reduce system size and simplify overall its technology by the industry licensing its patents. product design.” The Fox Group has entered into a patent license “Since we deliver a complete solution from the agreement with a U.S. corporation for rights to original materials through to the final modules, we patents in Fox Group’s portfolio. are in a position to rapidly innovate and deliver product in quick response to demand,” said Primit This is the fourth non-exclusive and royalty-bearing Parikh, President of Transphorm. “We look forward license agreement the firm has signed for its to helping our partners open a new era in ultra- patents related to SiC substrates. Details of the efficient and compact power conversion.” patent license were not disclosed. “Solving the enormous problem of power waste “Fox Group is pleased to sign another license will create immediate, long-term shared value under its patents,” said Barney O’Meara, President for Transphorm’s customers and investors,” said & CEO. “Fox Group’s key patents are for silicon Randy Komisar, partner, Kleiner Perkins Caufield & carbide with low defect density, which is especially Byers. “It was imperative for our firm to get behind desirable for high power semiconductor devices, Transphorm because it is the first company with a and LEDs, lasers, and RF devices, as well. At this viable, commercial-scale solution to energy losses time non-exclusive licenses are still available to associated with high-voltage power conversion.” companies in the silicon carbide industry worldwide. 132 www.compoundsemiconductor.net March 2011 Power Electronics ♦ news digest Since Fox Group is not making silicon carbide JumpStart projects receive up to $5,000 in matching wafers or devices, we wish for the public to benefit funds for project costs such as faculty and research from the Fox Group technology by the entire staff, facilities, services, supplies and materials. industry licensing our patents,” he continued. Since its inception, 41 companies have benefited from the program. Silicon carbide is used in the production of high performance power semiconductor devices and optoelectronics such as LEDs, lasers, RF transistors, detectors, MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes. It is SemiSouth Orders Largest expected to play an increasingly important role in higher efficiency power conditioning systems for Commercial SiC Reactor Tool electric vehicles, photovoltaics, wind, and other from Aixtron renewable energy sources. Aixtron says SemiSouth has ordered the world’s Founded in 1999, Fox Group is a privately-held U.S. largest commercial capacity planetary reactor for corporation with technology and patents related to the production of SiC power devices. SiC and to high purity, epitaxial crystal growth for LEDs and lasers. Aixtron SE has a new order for a CVD reactor from existing customer SemiSouth Laboratories of Starkville, MS, USA. Cornell to Collaborate The order is for an AIX 2800G4 WW deposition with Ephesus to develop system in the 10x100 mm and the 6x150 mm configuration which will be used for the production Advanced GaN RF Amp of power silicon carbide (SiC) Junction Field Effect Transistor (JFET) and Schottky Barrier Diode Four N.Y. companies, including Ephesus microelectronic devices. Technologies have received “JumpStart” grants to develop an advanced GaN on diamond device. SemiSouth placed the order in the fourth quarter of 2010 and the system will be delivered in the second Four New York companies have received 2011 quarter of 2011. The local Aixtron support team will JumpStart Program grants for the spring semester commission the new reactor at the company’s state through the Cornell Centre for Materials Research. of the art clean-room facility housed in its Starkville, MS, USA headquarters. Funded by the New York State Foundation for Science, Technology and Innovation (NYSTAR), “Aixtron technology is what we are familiar with JumpStart assists New York state small businesses after nearly seven years experience with Aixtron in developing and improving through university SiC reactors,” says Jeffrey B. Casady, CTO and VP collaborations. Business Development SemiSouth Laboratories. “We now have an urgent need to move up to larger Ephesus Technologies, based in Syracuse, will wafer diameters and increase our capacity for collaborate with Eshan Afshari, assistant professor power device production.” of electrical and computer engineering, to design an advanced RF amplifier based on a GaN thin film “Therefore, it was an easy selection process for us grown on diamond substrates. because this machine provides the world’s largest commercial CVD reactor capacity. Moreover, we will MCB Clean Room Solutions, in Honeoye Falls, will achieve optimum time to market because theAIX collaborate with Shefford Baker, associate professor 2800G4 WW system is the production-qualified of materials science and engineering, to develop SiC Planetary Reactor platform. We are assured and characterise an AlN piezoelectric film for a of the best epitaxial layer quality with excellent micro-mechanical energy harvesting application. homogeneity and the lowest epitaxial defect density giving us maximized device yield,” he concluded. March 2011 www.compoundsemiconductor.net 133 news digest ♦ Equipment and Materials * Tuesday, March 22, 2011 at 11:20 AM ET at the Sidoti and Company 15th Annual Emerging Growth Equipment Institutional Investor Forum at The Grand Hyatt Hotel New York in New York City, New York. and Materials The presentations will be broadcast live via webcast and will be available on the Ultratech website at http://ir.ultratech.com . New shares from Aixtron to be traded under separate Aixtron expecting further ISIN Growth in 2011 New shares resulting from exercised options are not entitled for dividend for fiscal year 2010. Successful market penetration of the firm’s latest generation systems and early demand for LED Aixtron SE, a worldwide provider of deposition lighting production equipment will see an increase equipment to the semiconductor industry, has a in R&D capacity after an excellent year. number of stock option programs in place that grant the members of the Executive Board and Aixtron SE, a global provider of deposition employees the right to purchase Aixtron shares equipment to the semiconductor industry, delivered under certain conditions. in 2010, for the third year in succession, the best operational performance in its history with €783.8m Under the terms of the stock option plan 2007, of revenues and a 35% EBIT margin. Guidance for stock options can currently be exercised. New 2011 has been set at € 800-900m of revenues with shares resulting from exercised options are not an EBIT margin of circa 35%. entitled for dividend for fiscal year 2010 and will therefore be traded on the Frankfurt Stock Financial Data for Fiscal 2009 & 2010 Exchange under the separate ISIN DE000A1H30A0 until and including the day of the AGM 2011 on May 19, 2011. Ultratech to participate at Upcoming Investor Conferences In fiscal year 2010, Aixtron’s revenues were slightly The presentations will be broadcast live via webcast higher than previously guided, at € 783.8m, which is and will be available on the Ultratech website. over two and a half times more than the 2009 total revenue figure of € 302.9m. Ultratech, a supplier of lithography and laser- processing systems used to manufacture The Company’s gross profit increased by 206% semiconductor devices and high-brightness LEDs to € 411.8m in 2010, more than tripling the 2009 (HB-LEDs), will present at the following upcoming figure of € 134.7m, in line with higher revenues investor conferences: and a lower cost of sales percentage, resulting in a nine percentage points higher gross margin of 53% * Tuesday, March 8, 2011 at 1:30 PM ET at the (2009: 44%). Kaufman Brothers Third Annual Green Technology Conference at the Boston Harbor Hotel in Boston, The operating result significantly increased by Massachusetts. 339% from € 62.7m in 2009 to € 275.5m in 2010, 134 www.compoundsemiconductor.net March 2011 Equipment and Materials ♦ news digest with a 14 percentage points higher EBIT margin of “The foundation of our success in the past has 35% (2009: 21%). been our commitment to innovative Research and Development and focused market-led Engineering, Net income came in at € 192.5m, an increase of and these are exactly the same qualities that 330% over the 2009 figure of € 44.8m and results in are required to compete in the bigger and more basic earnings per share of € 1.93 for the full year dynamic markets we will be serving in the future. 2010 (2009: € 0.49). The substantial R&D investments we are making today are a reflection of our commitment to deliver As with revenue development; equipment order increasingly customer focused solutions for that intake significantly increased in 2010 and was future,” concluded Hyland. 102% up year on year, at € 748.3m (2009: € 370.1m). Over the four quarters of the year, Outlook orders slightly, but steadily increased to € 204.0 in Q4/2010. Latest generation systems made up 55% Aixtron entered the year with a very solid opening of those Q4 orders. order backlog of € 302.3m (revalued from € 274.8m at USD 1.35/€ as of January 1, 2011), all shippable The total equipment order backlog of € 274.8m at in 2011. Aixtron’s Management believes that, with December 31, 2010 was 35% higher than at the this foundation, Aixtron can deliver total revenues of same point in time in 2009 with € 203.8m. € 800-900m and an EBIT margin of around 35% in fiscal year 2011. Dividend proposal The Executive Board and Supervisory Board will propose to Aixtron’s Annual Shareholders’ Meeting Hamamatsu Unveils Versatile in May 2011 to pay a dividend of € 0.60 per share, which is four times the dividend figure paid out in Tools to measure PL & 2010. This would result in a dividend payout of € Quantum Yield 60.7m to shareholders and a pay-out ratio of 31.5% based on the group net income. The new Quantaurus series enables comprehensive characterisation of photoluminescent compound Management Review semiconductor materials such as LEDs and quantum dots. Paul Hyland, President & CEO at Aixtron, comments: “I think we can afford to very briefly Hamamatsu Photonics has introduced the enjoy this moment and have good reason to be Quantaurus series of compact instruments for proud of this remarkable result with revenues, in measuring the properties of photoluminescent USD-terms, of more than one billion.” materials. “What we saw in 2010, was not only a continuation The new Quantaurus-Tau measures fluorescence of the market driven demand for LEDs for TV lifetimes as short as 100 picoseconds, while backlighting, but also an increased effect of the Quantaurus-QY measures quantum yields government sponsored demand and some early faster and more easily than the traditional relative encouraging investments by customers beginning to measurement method. position themselves for the emerging LED lighting market.” The combination of these two instruments enables comprehensive characterisation of “The market we serve today has clearly been photoluminescent compound semiconductor transformed from one small technical niche market materials such as LEDs and quantum dots. The into two significantly larger and sustainable mass Quantaurus series can be used to analyse materials markets; namely consumer electronics and utility in thin film, powder, solid, or liquid form. Liquid lighting. In a very short period of time, the industry samples can be cooled down to -196 degrees has found that essential ‘critical mass’.” Celsius. March 2011 www.compoundsemiconductor.net 135 news digest ♦ Equipment and Materials The Quantaurus-Tau lets users quickly and for wireless, LEDs and photovoltaic devices. easily measure the fluorescence lifetime of photoluminescent materials from sub-nanoseconds AXT, a manufacturer of compound semiconductor to the millisecond range with single-photon-counting substrates, has reported financial results for the sensitivity. The two available models cover a fourth quarter ended December 31, 2010. spectral range from 300 nm to 800 nm (C11367-11) and from 380 nm to 1030 nm (C11367-12). Revenue for the fourth quarter of 2010 was $26.9 million, 51% up from $17.8 million in the fourth quarter of 2009. Operation is simple, and the dedicated software includes a variety of measurement and analysis functions. Seven LEDs allow sample excitation from 280 nm to 630 nm. Furthermore, Quantaurus- Tau features optional add-ons for performing phosphorescence measurements. The Quantaurus-QY offers a fast, easy way to Total GaAs substrate revenue was $18.7 million for measure the quantum yield of photoluminescent the fourth quarter of 2010, compared with $19.2 materials. It performs absolute measurements million in the third quarter of 2010. and does not require known reference samples, in contrast to the traditional relative method. Operation InP substrate revenue was $1.1 million for the is simple and intuitive, from selecting excitation fourth quarter of 2010, compared with $955,000 in wavelengths to making a variety of measurements the third quarter of 2010. with various analysis functions. Germanium (Ge) substrate revenue was $3.4 million for the fourth quarter of 2010 compared with $2.3 million in the third quarter of 2010. Raw materials sales were $3.5 million for the fourth quarter of 2010, compared with $4.4 million in the third quarter of 2010. Analyses include photoluminescence quantum yield measurement, excitation wavelength dependence, photoluminescence spectrum, photoluminescence excitation spectrum, and colour coordinates. The Quantaurus-QY is available in two models with different wavelength ranges: the standard model (C11347-11) covers wavelengths from 300 nm to 950 nm, and the NIR model (C11347-12) covers the region from 400 nm to 1100 nm. Gross margin was 39.8 % of revenue for the fourth quarter of 2010. By comparison, gross margin in the AXT Quarterly Revenues up 51% to $26.9 million third quarter of 2010 was 39.3 % of revenue. Gross margin was 33.9% of revenue for the fourth quarter The firm expects a reduction of orders in Q1 for of 2009. semi-insulating GaAs substrates but is anticipating sequential growth in Q2 2011, driven by the demand Operating expenses were $5.1 million in the fourth 136 www.compoundsemiconductor.net March 2011 Equipment and Materials ♦ news digest quarter of 2010, compared with $3.8 million in Q3 AXT estimates revenue for the first quarter for 2011 2010. Operating expenses in the Q4 2009 were will be between $24.0 million and $25.0 million, $3.0 million. which is 28% greater than the first quarter of 2010. The company estimates that net income per share Income from operations for the fourth quarter of will be between $0.11 and $0.13, which takes 2010 was $5.6 million compared with income from into account the weighted average share count of operations of $6.7 million in the third quarter of approximately 32.6 million shares. 2010, and income from operations of $3.1 million in the fourth quarter of 2009. Net interest and other income for the fourth LayTec Makes the Move from quarter of 2010 was $422,000, which included an GmBH to AG Company unrealised foreign exchange gain of $242,000. This compares with net interest and other income The conversion will give LayTec AG an even wider of $468,000 in the third quarter of 2010, which range of options for further company growth. included an unrealised foreign exchange gain of $210,000, and net interest and other expense LayTec has announced its conversion from LayTec of $92,000 in the fourth quarter of 2009, which GmbH (a limited liability company) into LayTec AG included an unrealised foreign exchange loss of (Aktiengesellschaft, joint stock corporation). $163,000. With today’s entry into the commercial register of Net income in the fourth quarter of 2010 was $4.9 Berlin/Charlottenburg, LayTec will operate in future million or $0.15 per diluted share compared with net as LayTec AG. income of $5.6 million or $0.17 per diluted share in the third quarter of 2010, and with a net income of LayTec will continue being a privately owned $2.8 million or $0.09 per diluted share in the fourth company. The conversion is not imposing changes quarter of 2009. to the shareholder structure, which has been stable for many years. The first advisory board was elected by the shareholder meeting in October Management Qualitative Comments 2010. Markus Weyers (Berlin), the chairman of the advisory board, is working together with Egbert “2010 was a year of tremendous execution for AXT,” Woelk (Boston) and Götz Fischbeck (Frankfurt/ said Morris Young, CEO of AXT. “Revenue for the Main) to support and advise the CEO and president year increased by more than 72 % from 2009; our of LayTec AG, gross margins performance improved by more than 1300 basis points and our net income grew by Thomas Zettler, and his board of managers. LayTec $20.5 million. These results reflect healthy growth in belongs to the 50 fastest growing technology our markets as well as continued gains, outstanding companies in Germany (Deloitte Fast 50 ranking product quality and tremendous operational for the company‘s growth in 2005–2009). The execution across our entire organisation.” conversion into an ‘Aktiengesellschaft’ will give LayTec AG an even wider range of options for “ While we are experiencing some near-term further growth of the company and for sharing our softness in the Taiwanese LED market and expect success with the employees. seasonality in our first quarter semi-insulating gallium arsenide revenues, we believe that we will see sequential growth in our business beginning again in the second quarter, driven by positive secular trends in the demand for wireless devices, LEDs and photovoltaics, as well as gains in our positioning within various customers in our market.” Outlook for First Quarter, Ending March 31, 2011 March 2011 www.compoundsemiconductor.net 137 news digest ♦ Equipment and Materials The Company’s Q4 2010 book-to-bill ratio was .98 Veeco Results Best Ever with to 1, and quarter end backlog was $555 million. $300 Million Net Sales On August 24th, Veeco announced that its Board Revenues were up 152% from the fourth quarter of Directors had authorised the repurchase of up of last year, much of it attributed to systems sold to to $200 million of the Company’s common stock LED & Solar manufacturers. through August 2011. During the fourth quarter, Veeco purchased 189,218 shares of its common Veeco Instruments has announced its financial stock at an average price of $34.33 per share, for a results for the fourth quarter and full-year ended total of approximately $6.5 million bringing the total December 31, 2010. purchased under the Company’s share repurchase program during 2010 to $38 million, or about 1.1 million shares. Peeler continued, “We currently estimate that the total available market for MOCVD from 2011 through 2015 is greater than 5,000 reactors. In order to capitalise on this opportunity, drive our business, and continue to gain market share, today we launched the TurboDisc MaxBright Multi- reactor (“cluster”) MOCVD system. By dramatically accelerating our new product roadmap to create MaxBright, the most productive MOCVD system on John R. Peeler, Veeco’s CEO commented, “The the market, Veeco will help enable the industry’s fourth quarter of 2010 was the best in our history, transition to LED lighting.” and we are extremely proud of our performance. Revenues were $300 million, gross margin was First Quarter and Full-Year 2011 Guidance 51% and net income was $97 million. Veeco’s revenues grew 8% sequentially and 152% from the Veeco’s first quarter 2011 revenue is currently fourth quarter of last year.” forecasted to be between $215 and $265 million. Earnings per share are currently forecasted to be “Both Veeco segments delivered excellent between $0.94 to $1.31 on a GAAP basis. performance: LED & Solar revenues were up 6% sequentially to a record $258 million, and Data Commenting on Q1 2011 guidance, Peeler stated, Storage revenues were up 21% to $42 million, our “Q1 2011 revenues will be lower than Q4 2010 best quarter since 2008. Full year 2010 results were because we are planning to ship 12-20 MOCVD also at record levels, with revenue of $933 million reactors in the new MaxBright “cluster” format, and net income of $261 million. These results and will not be recording any revenue on these were achieved through a combination of world- systems in the first quarter. Timing of revenue is class products, a focus on high-growth market also being impacted by the longer order-to-revenue opportunities, operational excellence, our flexible cycle times associated with the high percentage of manufacturing strategy, and a deep commitment to business currently coming from China, primarily due satisfying our global customers.” to customer facility readiness. The average time to convert orders to revenue is currently several “Veeco’s fourth quarter bookings totaled $295 months longer in China than in other regions.” million,” continued Peeler, “with another very strong quarter in LED & Solar of $253 million, which was “With starting backlog of $555 million, and up about 4% sequentially. Orders for MOCVD anticipating strong first half 2011 bookings, we systems were placed by twenty customers across currently forecast that Veeco’s 2011 revenues all regions, with strength continuing in China. will be greater than $1 billion, resulting in non- Data Storage orders were $42 million, up 20% GAAP earnings per share of greater than $5.00,” sequentially as technology buys for new Veeco continued Peeler. “We are optimistic about the deposition systems continue.” future and confident that we are well positioned 138 www.compoundsemiconductor.net March 2011 Equipment and Materials ♦ news digest from a technology, product, and operational repeatability of our inspection procedures and our standpoint to grow our LED & Solar and Data operation efficiency. In addition, we are using the Storage businesses in 2011 and beyond.” Rudolph tools to measure critical dimension and overlay metrics at a significant cost savings over standalone metrology tools.” KeeAnn Tan, Rudolph’s S.E. Asia general manager, Avago Orders Automated added, “We are particularly excited to win this business in the rapidly expanding market for Inspection and Metrology advanced optoelectronic devices. The pricing of System from Rudolph these devices typically provides extremely high leverage and fast payback for investments in The NSX inspection system will play a key role yield improvement. We look forward to working in Avago’s efforts to enhance process yields for with Avago to extend automated inspection and advanced optoelectronic devices. metrology across their entire manufacturing enterprise, including back-end packaging and Rudolph Technologies, a provider of process assembly processes.” characterisation equipment, has another order for its NSX Series from Avago Technologies Rudolph’s NSX Series is a fast, precise, production- Manufacturing (Singapore). proven solution for automated macro defect inspection throughout the device manufacturing Avago will use the NSX System for front-end process. Macro defects may be created during inspection at its advanced optoelectronic devices wafer manufacturing, probing, bumping, dicing, or wafer fabrication site in Singapore, which by general handling, and can have a major impact manufactures leading edge high speed VCSELs, on the quality of a microelectronic or optoelectronic detectors and LEDs. device and the yield of the manufacturing process. The NSX system quickly and accurately detects yield-inhibiting defects, providing quality assurance as well as valuable process information needed to reduce manufacturing costs and time-to-market for new products. Rudolph’s Discover Enterprise software integrates data from inspection, metrology and manufacturing tools throughout the fab to provide enterprise-wide visibility of process performance. The NSX automated macro defect inspection system will provide both metrology and inspection data, and will play a central role in assisting the enhancement of Avago’s process yields. The CRAIC Unveils Automated system, scheduled for shipment in Q1, is the UV-visible-NIR Spectroscopy second purchased by Avago. The first NSX System shipped in Q4 2010. Additional orders to extend Tool automated inspection into back-end applications are anticipated in the coming year. The system uses a range of techniques to measure microscopic features and is suited to the thin film “As our production volumes scale up, we have measurement of compound semiconductors. turned increasing attention to improving process yields,” said Tom White, Avago’s worldwide director CRAIC’s 20/20 PV microspectrophotometer allows of Optoelectronics Devices Operation. “The NSX you to image and measure spectra by absorbance, System will allow us to improve the reliability and reflectance, fluorescence and emission from the deep ultraviolet to the near infrared. March 2011 www.compoundsemiconductor.net 139 news digest ♦ Novel Devices Now the firm has unveiled an automated version of The automated 20/20 system integrates CRAIC’s its flagship product, the 20/20 Perfect Vision UV- Lightblades spectrophotometer technology with visible-NIR microspectrophotometer. custom built UV-visible-NIR microscope and powerful, easy-to-use software. By including high-resolution digital imaging, the user is also able to use the instrument as an automated UV, colour and NIR microscope. Sophisticated software, ranging from image analysis, spectral analysis, film thickness determination and colorimetry are all available to enhance its capabilities. Novel Devices Etched Quantum Dots Shape Up as Single Photon Emitters NIST researchers have shown that electron beam lithography and etching can produce quantum dots This system is designed to be fully programmable which can be shaped and positioned more reliably with touchscreen controls so that it can than dots made with conventional crystal growth automatically analyse microscopic samples with methods. UV-visible-NIR spectroscopy and microscopy. Imaging and spectroscopic analysis of samples Like snowflakes or fingerprints, no two quantum can be done by absorbance, reflectance and dots are identical. But a new etching method for fluorescence from the deep UV to far into the near shaping and positioning these semiconductor infrared. nanocrystals might change that. What’s more, tests at the National Institute of Standards and The applications are numerous and include Technology (NIST) confirm that etched quantum thin film measurement of semiconductors and dots emit single particles of light (photons). This microcolorimetry of flat panel displays. discovery boosts prospects for powering new types of devices for quantum communications. “CRAIC Technologies has been an innovator in the field of UV-visible-NIR microanalysis since its founding. We have helped to advance the field of microscale analysis with innovative instrumentation, software, research and teaching. The automated 20/20 PV microspectrophotometer is the ideal tool for a laboratory or factory due its cost effectiveness for analysing many samples quickly and accurately” states Paul Martin, President of CRAIC Technologies. “CRAIC Technologies microspectrophotometers are backed by years of experience in both designing, building and the using of this type of instrumentation for imaging and spectroscopic analysis.” 140 www.compoundsemiconductor.net March 2011 Novel Devices ♦ news digest Colour micrograph of quantum dots made possibility of making identical dots, which could be using electron beam lithography and etching. used to generate special states of light such as two This type of quantum dot can be shaped and or more photons that are entangled, a quantum positioned more reliably than dots made with phenomenon that links their properties even at a conventional crystal growth methods. distance. The conventional way to build quantum dots is The quantum dots tested in the experiments were to grow them like crystals in a solution, but this made at NIST. A final step was carried out at the somewhat haphazard process results in irregular University of Illinois, where a crystal layer was shapes. The new, more precise process was grown over the dots to form clean interfaces. developed by NIST postdoctoral researcher Varun Verma when he was a student at the University of Further details of this work is described in the paper Illinois. “Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot” by V.B. Verma, Verma uses electron beam lithography and etching M.J. Stevens, K.L. Silverman, N.L. Dias, A. Garg, to carve quantum dots inside a semiconductor J.J. Coleman and R.P. Mirin. Optics Express. Vol. sandwich (called a quantum well) that confines 19, No. 5, Feb. 28, 2011, p. 4182. Posted online particles in two dimensions. Lithography controls Feb. 17, 2011. the dot’s size and position, while sandwich thickness and composition, as well as dot size, can be used to tune the colour of the dot’s light emissions. University of Texas Orders Some quantum dots are capable of emitting Aixtron Black Magic Tool for individual, isolated photons on demand, a crucial Wearable Electronics trait for quantum information systems that encode information by manipulating single photons. In The system will be used to create high quality new work reported in Optics Express, NIST tests carbon nanotubes and graphene thin films for a demonstrated that the lithographed and etched project on electronic textiles. These are fabrics quantum dots do indeed work as sources of single that enable computing, digital components and photons. electronics to be embedded in them. The tests were performed on dots made of InGaAs. Aixtron SE has installed and commissioned a 4-inch Dots of various diameters were patterned in specific Black Magic Plasma Enhanced CVD (PECVD) positions in square arrays. Using a laser to excite system at the University of Texas at Austin. individual dots and a photon detector to analyze emissions, NIST researchers found that dots 35 The local Aixtron support team set up the tool nanometres (nm) wide, for instance, emitted nearly after it was delivered at the end of 2010 at all light at a wavelength of 888.6 nm. The timing the Department of Electrical and Computer pattern indicated that the light was emitted as a Engineering, Microelectronics Research Centre. train of single photons. Deji Akinwande and Rod Ruoff from the Department NIST researchers now plan to construct reflective of Electrical and Computer Engineering are cavities around individual etched dots to guide their working on several projects to exploit the material light emissions. If each dot can emit most photons in flexible electronics. “We needed a dedicated perpendicular to the chip surface, more light can CVD deposition system to reliably, easily and be collected to make a more efficient single photon routinely produce high quality carbon nanotubes source. and graphene thin films for our government funded project on wearable electronics. I am confident that Vertical emission has been demonstrated with Aixtron has the best equipment solution in terms of crystal-grown quantum dots, but these dots can’t be technology, scalability and flexibility for producing positioned or distributed reliably in cavities. Etched these thin films,” Deji Akinwande commented. dots offer not only precise positioning but also the March 2011 www.compoundsemiconductor.net 141 news digest ♦ Novel Devices Carbon nanotubes and graphene are increasingly being applied to flexible electronics. These films possess unique electrical and electronic properties which enable them to be used as electrodes, sensing materials as well as high mobility devices. They can be made extremely thin with a high degree of transparency, and maintain their properties whilst being flexed. Established in 1983, the Microelectronics Research Centre is equipped with state of the art semiconductor fabrication equipment housed in 12,000 square feet of Class 100 and Class 1000 cleanroom space, with 15,000 square feet of characterization laboratories. The Centre has 15 faculty and 120 graduate students, and is recognised as one of the leading centres of excellence for graphene research. Electronic textiles are fabrics that enable computing, digital components and electronics to be embedded in them. This involves mounting classical electronic devices such as conducting wires, ICs, LEDs and conventional batteries into garments. The electronic function can also be created directly on the textile fibres. These functions can either be passive such as pure wires, conducting textile fibres, or more advanced functions such as transistors, diodes and solar cells. E-textiles have the ability to sense, act, store, emit, and move. 142 www.compoundsemiconductor.net March 2011