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Shine a Challenging Light Nitride Laser Reliability Multi-Junction Cells New Approach Exposes Device Sub-Structure

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Shine a Challenging Light Nitride Laser Reliability Multi-Junction Cells New Approach Exposes Device Sub-Structure Front Cover v2FINAL02.qxp 25/2/11 10:44 Page 1 III-V logic Research suceeds on on-axis silicon Lower temp MOCVD Plasma slashes hydrogen impurities Conductive polymers Cutting charge dissipation in GaN, ZnO processing Shine a challenging light Nitride laser reliability Multi-junction cells New approach exposes device sub-structure Triple junction PV Tuning the best performance with quantum wells Emission control Burning beats scrubbing for LEDs Research review LED droop debate rages on Nano Boost for thermoelectric An Angel Business Communications publication March 2011 Volume 17 Number 2 HIGHER PRODUCTIVITY // With almost 30 years of experience AIXTRON stands for proven engineering power and dedicated cus tomer support: Our equipment serves a diverse range of customers to manufacture highest LED volumes at lowest cost. BETTER PERFORMANCE // As the driving force in deposition equipment AIXTRON engineers power ful technology solutions: Our equipment is the best choice available to manufacture the brightest and most efficient LEDs. SMARTER RESOURCES // AIXTRON’s intelligent equipment concept enables optimized use of resources: The results are extremely low consumption of consumables, minimized maintenance requirements and optimized utilization of human resources. AIXTRON started in 1983 and is today a leading provider of deposition equipment to the semiconductor industry. With our advanced solutions customers worldwide build components for electronic as well as opto-electronic applications. As pace maker in our line of industry we are keeping always one step ahead. AIXTRON SE / KAISERSTRASSE 98 / 52134 HERZOGENRATH / GERMANY / [email protected] / WWW.AIXTRON.COM _AIX_ImageAZ_210x297_BEL_110110.indd 1 10.01.2011 15:03:57 Uhr Comment Final.qxp 25/2/11 09:49 Page 3 CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY editorialview March 2011 Volume 17 Number 2 Editor-in-Chief David Ridsdale [email protected] +44 (0)1923 690210 Consultant Editor Richard Stevenson PhD [email protected] +44 (0)1291 629640 News Editor Dr. Su Westwater [email protected] Director of SOLAR & IC Publishing Jackie Cannon [email protected] +44 (0)1923 690205 Account Managers Shehzad Munshi [email protected] +44 (0)1923 690215 Tommy Beazley [email protected] +44 (0)1923 690222 III-V logic USA Representatives Brun Media Tom Brun E: [email protected] Tel: 724 539-2404 Where will we be in 2015? My guess is that by then Janice Jenkins E: [email protected] LED light bulbs will be more than just a novelty, Tel: 724-929-3550 concentrating photovoltaics based on III-V triple Director of Logistics Sharon Cowley [email protected] junction cells will be seeing some hefty deployments +44 (0)1923 690200 and compound semiconductors will be starting to Design & Production Manager play a role in helping to maintain the march of Mitchell Gaynor [email protected] Moore’s Law. +44 (0)1923 690214 Circulation Director Jan Smoothy [email protected] The notion that the compounds could soon replace +44 (0)1923 690200 silicon CMOS is sure to raise a few eyebrows. But Subscriptions Manager it’s not that outrageous an idea. After all, the Debbie Higham [email protected] +44 (0)1923 690220 International Technology Roadmap for Semiconductors is advocating the use of new materials for the 11 nm Chief Operating Officer Stephen Whitehurst [email protected] node that will be rolled out in 2015, and III-Vs are topping the short list. +44 (0)2476 718970 Directors If compounds are to make an impact in four years time, substantial progress has to be made at the Bill Dunlop Uprichard – CEO Stephen Whitehurst – COO research level right now. And that seems to be happening. Jan Smoothy – CFO Haroon Malik, Jackie Cannon, Scott Adams, Sharon Cowley, Sukhi Bhadal Any CMOS successor must be built on silicon – that industry is far too conservative to have it any Published by other way. So processes will have to be devised that not only overcome the differences in lattice Angel Business Communications Ltd, constant between III-Vs and silicon, but also differences in polarity. And these processes will need Hannay House, 39 Clarendon Road, Watford, Herts WD17 1JA, UK to place two types of transistor on the substrate – probably one made from III-Vs and the other from T: +44 (0)1923 690200 germanium – to realize devices that are either good at transporting electrons or holes. F: +44 (0)1923 690201 Angel Business Communications Ltd Unit 6, Bow Court, Fletchworth Gate, At the International Electron Devices Meeting at the end of 2010 Sematech showed one way to Burnsall Road, Coventry CV5 6SP do this, producing n-type transistors with a very tight spread of characteristics on 200 mm silicon T: +44 (0)2476 718 970 F: +44 (0)2476 718 971 (see Compound Semiconductor, January/February 2011, p12). Compound Semiconductor is published eight times a year on a controlled circulation basis. One downside of this approach was that a buffer was far too thick. In addition, deposition of the Non-qualifying individuals can subscribe at: £105.00/€158 pa (UK & Europe), £138.00 pa (air mail), $198 pa (USA). III-Vs was over the entire substrate rather than localized areas. Cover price £4.50. All information herein is believed to be correct at time of going to press. The publisher does not accept responsibility for any errors and omissions. The views expressed in this publication are not necessarily those of the Researchers in Europe that include a team from imec have addressed both these issues by forming publisher. Every effort has been made to obtain copyright permission for the material contained in this publication. Angel Business Communications Ltd will be happy to trenches in the silicon substrate and filling them up with a thin layer of germanium, followed by a acknowledge any copyright oversights in a subsequent issue of the publication. thicker one of InP. If the trenches have a concave bottom and the germanium surface is treated to Angel Business Communications Ltd take on a particularly morphology, it is possible to form high-quality InP material on the orientation of © Copyright 2011. All rights reserved. Contents may not be reproduced in whole or part without the written consent of silicon that is churned through the foundries today (see p.12 of this issue). the publishers. The paper used within this magazine is produced by chain of custody certified manufacturers, guaranteeing sustainable sourcing. In the last few months imec’s engineers have formed transistors from this material. Initial results are US mailing information: Compound Semiconductor (ISSN 1096-598X) is published 8 times a year Jan/Feb, March, not great, with the devices suffering from high leakage currents. But the researchers have plans to April/May, June, July,August/September, October, November/December for a subscription of $198 by tackle this and help to make a good case for III-V logic. By 2015, their efforts could be paying Angel Business Communications Ltd, Hannay House, 39 Clarendon Road, Watford, Herts WD17 1JA, UK. dividends. Periodicals postage paid at Rahway, NJ. POSTMASTER: send address changes to: Compound Semiconductor, c/o Mercury International Ltd, 365 Blair Road, Avenel, NJ 07001 Richard Stevenson PhD Printed by: Pensord Press. Consultant Editor ISSN 1096-598X (Print) ISSN 2042-7328 (Online) © Copyright 2011. March 2011 www.compoundsemiconductor.net 3 Project2 24/2/11 16:40 Page 30 LIGHTING THE WAY IN LED THIN FILM DEPOSITION & ETCH Visit us at Booth 3506 SEMICON China 15 - 17 March If you are looking for damage free, high throughput thin fi lm processes in LED manufacturing, Evatec’s ideas light the way. From patterning of sapphire to deposition of ITO, contact and barrier layers, AR coatings, and Distributed Bragg Refl ectors (DBRs) we deliver custom batch and cluster solutions with enhanced evaporation, sputter, PECVD and ICP etch. LEDs s POWER DEVICES s TELECOMS s PHOTOVOLTAICS s MEMS s EVATEC - THE THIN FILM POWERHOUSE www.evatecnet.com TruPlasma RF 1003 Strive for new horizons with this generator. It has never been easier to run stable film deposition and dry etching processes in semiconductor production: Thanks to its unique CombineLine HF coupler technology with a real 50 Ohm output impedance, the new TruPlasma RF 1003 high-frequency generator by HÜTTINGER provides unrivaled process stability – even the strongest plasma fluctuations won‘t affect it. Why wait? With the TruPlasma RF 1003 you can reach for new horizons. Your reward will be best process results and ultimate productivity at reduced operational cost. TruPlasma RF 1003 – Most Advanced Energy Solutions from Germany. www.huettinger.com Contents Final.qxp 24/2/11 16:37 Page 5 CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY contents Volume 17 Number 2 industry & technology Preparing silicon for III-V Richard Stevenson reports on research efforts to 12 include III-V materials on silicon manufacturing Conference time The international CS Conference is upon us as 16 leaders gather to discuss the future of the industry MOCVD shake up One company claims to be lowering the required 20 temperature to create epitaxial films by splitting nitrogen gas into a plasma Charge dissipation Researchers in Glasgow have shown that conductive 25 polymers offer charge dissipation in GaN and ZnO sample processing Individual awareness A novel electroluminescence approach enables 28 characterisation of individual sub cells in multi junction cells Triple junction tuning 14 The best performance can be gained from triple 32 junction photovoltaic by optimising the absorption
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