Principles of Depth-Resolved Kikuchi Pattern Simulation for Electron Backscatter Diffraction

Total Page:16

File Type:pdf, Size:1020Kb

Principles of Depth-Resolved Kikuchi Pattern Simulation for Electron Backscatter Diffraction Journal of Microscopy, Vol. 239, Pt 1 2010, pp. 32–45 doi: 10.1111/j.1365-2818.2009.03353.x Received 1 April 2009; accepted 29 October 2009 Principles of depth-resolved Kikuchi pattern simulation for electron backscatter diffraction A. WINKELMANN Max-Planck-Institut fur¨ Mikrostrukturphysik, Halle (Saale), Germany Key words. Electron backscatter diffraction, Kikuchi pattern, convergent beam electron diffraction, dynamical electron diffraction Summary created by independent sources emitting divergent electron waves from within the crystal (Cowley, 1995). Kikuchi This paper presents a tutorial discussion of the principles patterns also appear in the scanning electron microscope underlying the depth-dependent Kikuchi pattern formation of when the angular distribution of backscattered electrons backscattered electrons in the scanning electron microscope. is imaged. Around this principle, the method of electron To illustrate the connections between various electron backscatter diffraction (EBSD) has been developed (Schwarzer, diffractionmethods,theformationofKikuchibandsinelectron 1997; Wilkinson & Hirsch, 1997; Schwartz et al., 2000; backscatter diffraction in the scanning electron microscope Dingley, 2004; Randle, 2008). Because the Kikuchi patterns and in transmission electron microscopy are compared are tied to the local crystallographic structure in the probe with the help of simulations employing the dynamical area of the electron beam, EBSD can provide important theory of electron diffraction. The close relationship between crystallographicandphaseinformationdowntothenanoscale backscattered electron diffraction and convergent beam in materials science (Small & Michael, 2001; Small et al., electron diffraction is illuminated by showing how both effects 2002). The success of EBSD stems from the fact that the can be calculated within the same theoretical framework. method is conceptually simple: in principle only a phosphor The influence of the depth-dependence of diffuse electron screen imaged by a sensitive CCD camera is needed. Also, scattering on the formation of the experimentally observed the geometry of the Kikuchi line patterns can be explained electron backscatter diffraction contrast and intensity relatively simply by tracing out the Bragg reflection conditions is visualized by calculations of depth-resolved Kikuchi for a point source inside a crystal (Gajdardziska-Josifovska & patterns. Comparison of an experimental electron backscatter Cowley, 1991). In principle, by such a procedure, a network diffraction pattern with simulations assuming several different of interference cones perpendicular to reflecting lattice planes depth distributions shows that the depth-distribution of and with opening angles determined from the respective backscattered electrons needs to be taken into account in Bragg angles can be projected onto the observation plane to quantitative descriptions. This should make it possible to analyse the crystallographic orientation of a sample grain. obtain more quantitative depth-dependent information from However, this does not give direct information on the observed experimental electron backscatter diffraction patterns via intensities,sinceaquantitativecalculationofthebackscattered correlation with dynamical diffraction simulations and Monte diffraction pattern needs to use the dynamical theory of Carlo models of electron scattering. electron diffraction that takes into account the localization of the backscattering process of electrons in the crystal unit cell. The author has recently been able to show (Winkelmann Introduction et al., 2007; Winkelmann, 2008) that Kikuchi patterns in backscattered electrons in the scanning electron microscope One of the most beautiful phenomena in electron diffraction can be successfully calculated using a Bloch-wave approach is the appearance of Kikuchi patterns formed by electrons that is usually applied for convergent beam electron diffraction scattered by a crystalline sample (Kikuchi, 1928; Nishikawa (CBED) in the transmission electron microscope. Instead of & Kikuchi, 1928; Alam et al., 1954). These patterns exist as divergent sources internal to the crystal, CBED patterns are a network of lines and bands and can be thought of as being formed by an external convergent probe sampling the same Correspondence to: Aimo Winkelmann, Max-Planck-Institut fur¨ Bragg interference cones as the internal sources, and thus Mikrostrukturphysik Weinberg 2, D-06120 Halle (Saale), Germany. Tel: +49 345 the CBED patterns show line patterns of similar geometry 5582 639; fax: +49 345 5511 223; e-mail: [email protected] to EBSD and other Kikuchi patterns. However, the intensity C 2009 The Author Journal compilation C 2009 The Royal Microscopical Society KIKUCHI PATTERN SIMULATION FOR EBSD 33 distributions in Kikuchi patterns and in CBED patterns are characteristic influence of the assumed depth distribution of qualitatively different, because CBED patterns are ideally the diffracted backscattered electrons on the dynamical EBSD formed by only those electrons which retain a fixed phase with patterns can be clearly sensed. respect to the incident beam, whereas the Kikuchi patterns are formedbyindependentsourceslargelyincoherentwithrespect to the primary beam. Theoretical background The main purpose of this paper is to explain in detail how the two types of problems are connected. Especially it will The fundamental building block of our understanding of be shown how the dynamical diffraction from completely Kikuchi pattern formation will be the prototypical example incoherent point sources (relevant to EBSD) can be treated of transmission electron diffraction: the dynamical diffraction in exactly the same formalism as the dynamical diffraction in ofanincidentplanewavebeambyathincrystalsample,which CBED. Close attention is paid to the rather different roles of leads to the formation of a transmitted discrete spot diffraction the thickness parameter in coherent and localized incoherent pattern. For perfect crystals, the Bloch-wave approach is a scattering, because from many investigations in transmission method often used to describe this process. For the purposes electron microscopy it is known that the observed Kikuchi of this paper, we actually do not need to understand the pattern contrast is strongly depending on the sample thickness mathematical details of this method. We will simply assume (Pfister, 1953; Reimer & Kohl, 2008). The previous theoretical that we have a working method at hand to calculate from a investigations of dynamical EBSD simulations (Winkelmann given crystal structure and from the incident beam direction et al., 2007; Winkelmann, 2008) in a first approximation were and energy the electron wave field inside the sample and the neglecting some specific details of the backscattered electron transmitted diffraction pattern. The Bloch-wave approach has depth distribution and assumed that the backscattered been shown to lead to very convincing agreement between electrons were produced with equal intensity in a layer of calculated and measured electron backscatter diffraction limited thickness near the surface, an approximation leading patterns (Winkelmann et al., 2007; Day, 2008; Maurice & to good agreement with a number of experimentally observed Fortunier, 2008; Winkelmann, 2008; Villert et al., 2009). EBSD patterns. Based on observations of the width of measured The same approach is used for quantitative convergent beam diffraction lines, the energy spread and correspondingly electron diffraction (Spence & Zuo, 1992) and thus we have the related depth sensitivity of electrons contributing to an a consistent framework to describe Kikuchi pattern formation EBSD pattern can be estimated. The depth sensitivity of in relation to the coherent elastic diffraction. EBSD is generally assumed to be in the range between 10 The main idea behind the Bloch-wave approach can be and 40 nm at 20 kV, with the lower values reached for summarized in a very compact way by noting that it seeks denser materials (Dingley, 2004). Experimental observations the wave function in a specific form. This form is known of the disappearance of Kikuchi pattern diffraction contrast from Bloch’s theorem for a translationally invariant scattering when depositing amorphous layers on crystalline samples are potential (Humphreys, 1979): consistent with this estimation (Yamamoto, 1977; Zaefferer, 2007). It is clearly an important question how the depth = π ( j) · ( j) π · (r) c j exp[2 ik r] C g exp[2 ig r](1) distribution of the backscattered electrons is quantitatively j g influencing the EBSD patterns. The inclusion of the relevant effects in dynamical simulations could possibly allow to The Bloch-wave calculation then finds the coefficients (j) (j) extract additional information from experimental EBSD cj,C g , and the vectors k by solving a matrix eigenvalue measurements. This is why we will analyse in detail how the problem derived from the Schrodinger¨ equation by limiting the depth distribution of the backscattered and diffracted electrons wave-function expansion to a number of Fourier coefficients is affecting the observed Kikuchi patterns in dynamical EBSD labelled by the respective reciprocal lattice vectors g,eachof simulations. which couples the incident beam to a diffracted beam. The The paper is structured as follows. First, the theoretical eigenvalues λ(j) appear when the Bloch-wave vector k(j) is framework is summarized, then the implications of coherence written as the
Recommended publications
  • Automated Crystal Orientation Mapping by Precession Electron
    Microscopy and Microanalysis (2021), 27, 1102–1112 doi:10.1017/S1431927621012538 Original Article Automated Crystal Orientation Mapping by Precession Electron Diffraction-Assisted Four-Dimensional Scanning Transmission Electron Microscopy Using a Scintillator-Based CMOS Detector Jiwon Jeong* , Niels Cautaerts, Gerhard Dehm and Christian H. Liebscher Max-Planck Institut für Eisenforschung GmbH, Düsseldorf 40237, Germany Abstract The recent development of electron-sensitive and pixelated detectors has attracted the use of four-dimensional scanning transmission elec- tron microscopy (4D-STEM). Here, we present a precession electron diffraction-assisted 4D-STEM technique for automated orientation mapping using diffraction spot patterns directly captured by an in-column scintillator-based complementary metal-oxide-semiconductor (CMOS) detector. We compare the results to a conventional approach, which utilizes a fluorescent screen filmed by an external charge charge-coupled device camera. The high-dynamic range and signal-to-noise characteristics of the detector greatly improve the image quality of the diffraction patterns, especially the visibility of diffraction spots at high scattering angles. In the orientation maps reconstructed via the template matching process, the CMOS data yield a significant reduction of false indexing and higher reliability compared to the conven- tional approach. The angular resolution of misorientation measurement could also be improved by masking reflections close to the direct beam. This is because the orientation sensitive, weak, and small diffraction spots at high scattering angles are more significant. The results show that fine details, such as nanograins, nanotwins, and sub-grain boundaries, can be resolved with a sub-degree angular resolution which is comparable to orientation mapping using Kikuchi diffraction patterns.
    [Show full text]
  • Transmission Electron Microscopy a Textbook for Materials Science Transmission Electron Microscopy
    Transmission Electron Microscopy A Textbook for Materials Science Transmission Electron Microscopy A Textbook for Materials Science David B. Williams Lehigh University Bethlehem, Pennsylvania and C. Barry Carter University of Minnesota Minneapolis, Minnesota Springer Science+Business Media, LLC Library of Congress Cataloging in Publication Data Williams, David B. (David Bemard), 1949- 1i'ansmission electron microscopy: a textbook for materials science I David B. WIiliams and C. Barry Carter. p. cm. Includes bibliographica1 references and index. ISBN 978-0-306-45324-3 ISBN 978-1-4757-2519-3 (eBook) DOI 10.1007/978-1-4757-2519-3 1. Materials-Microscopy. 2. 1i'ansmission electron microscopy. 1. Carter, C. Barry. II. Ti­ tie. TA417.23.W56 1996 96-28435 502'.8'25~c20 CIP ISBN 978-0-306-45324-3 © 1996 Springer Science+Business Media New York Originally published by Plenum Press, New York in 1996 Softcover reprint of the hardcover 1st edition 1996 109876543 AII rights reserved No part 01 this book may be reproduced, stored in a retrieval system, or transmitted in any lorm or by any means, electronic, mechanical, photocopying, microlilming, recording, or otherwise, without written permission Irom the Publisher To our parents, Walter Dennis and Mary Isabel Carter, and Joseph and Catherine Williams, who made everything possible Foreword Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi­ of materials by completing the processing-structure-prop­ croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy.
    [Show full text]
  • Automated Nanocrystal Orientation and Phase Mapping in the Transmission Electron Microscope on the Basis of Precession Electron Diffraction
    Portland State University PDXScholar Physics Faculty Publications and Presentations Physics 3-2010 Automated Nanocrystal Orientation and Phase Mapping in the Transmission Electron Microscope on the Basis of Precession Electron Diffraction Edgar F. Rauch SIMAP/GPM2 Laboratory Joaquin Portillo NanoMEGAS SPRL Stavros Nicolopoulos NanoMEGAS SPRL Daniel Bultreys NanoMEGAS SPRL Sergei Rouvimov SERVEIS Cientificotecnics Follow this and additional works at: https://pdxscholar.library.pdx.edu/phy_fac See P nextart of page the forNanoscience additional andauthors Nanotechnology Commons, and the Physics Commons Let us know how access to this document benefits ou.y Citation Details Rauch, Edgar F., et al. "Automated nanocrystal orientation and phase mapping in the transmission electron microscope on the basis of precession electron diffraction." Zeitschrift für Kristallographie International journal for structural, physical, and chemical aspects of crystalline materials 225.2-3 (2010): 103-109. This Article is brought to you for free and open access. It has been accepted for inclusion in Physics Faculty Publications and Presentations by an authorized administrator of PDXScholar. Please contact us if we can make this document more accessible: [email protected]. Authors Edgar F. Rauch, Joaquin Portillo, Stavros Nicolopoulos, Daniel Bultreys, Sergei Rouvimov, and Peter Moeck This article is available at PDXScholar: https://pdxscholar.library.pdx.edu/phy_fac/225 Z. Kristallogr. 225 (2010) 103–109 / DOI 10.1524/zkri.2010.1205 103 # by Oldenbourg Wissenschaftsverlag,
    [Show full text]
  • Present State of Electron Backscatter Diffraction and Prospective Developments
    Chapter 1 Present State of Electron Backscatter Diffraction and Prospective Developments Robert A. Schwarzer, David P. Field, Brent L. Adams, Mukul Kumar, and Adam J. Schwartz 1.1 Introduction terns were discussed (Nishikawa and Kikuchi 1928). The researchers placed a recording film to capture the pattern in transmission, and then placed a film in Electron backscatter diffraction (EBSD), when front of the specimen so as to obtain an image from employed as an additional characterization technique backscattered electrons. This technique was discussed to a scanning electron microscope (SEM), enables in detail by Alam, Blackman, and Pashley in 1954 individual grain orientations, local texture, point-to- (Alam et al. 1954) and later investigated by Venables point orientation correlations, and phase identification and co-workers (Venables and Harland 1973; Venables and distributions to be determined routinely on and Bin-Jaya 1977). The early literature dubbed the the surfaces of bulk polycrystals. The application technique high-angle Kikuchi diffraction and it has has experienced rapid acceptance in metallurgical, been referred to by several additional acronyms in the materials, and geophysical laboratories within the past two decades. Those that are most notable, other past decade (Schwartz et al. 2000) due to the wide than EBSD, include the more accurate nomenclature of availability of SEMs, the ease of sample preparation backscatter Kikuchi diffraction (BKD) or backscatter from the bulk, the high speed of data acquisition, and electron Kikuchi
    [Show full text]
  • 1 Automated Reconstruction of Spherical Kikuchi Maps Chaoyi
    Automated Reconstruction of Spherical Kikuchi Maps Chaoyi Zhu1, Kevin Kaufmann2, Kenneth Vecchio1,2,* 1Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093, USA 2Department of NanoEngineering, University of California San Diego, La Jolla, CA 92093, USA Abstract An automated approach to reconstruct spherical Kikuchi maps from experimentally collected electron backscatter diffraction patterns and overlay each pattern onto its corresponding position on a simulated Kikuchi sphere is presented in this study. This work demonstrates the feasibility of warping any Kikuchi pattern onto its corresponding location of a simulated Kikuchi sphere and reconstructing a spherical Kikuchi map of a known phase based on any set of experimental patterns. This method consists of the following steps after pattern collection: 1) pattern selection based on multiple threshold values; 2) extraction of multiple scan parameters and phase information; 3) generation of a kinematically simulated Kikuchi sphere as the ‘skeleton’ of the spherical Kikuchi map; and 4) overlaying the inverse gnomonic projection of multiple selected patterns after appropriate pattern center calibration and refinement. In the case study of pure aluminum, up to 90% of the Kikuchi sphere could be reconstructed with just seven experimentally collected patterns. The proposed method is the first automated approach to reconstructing spherical Kikuchi maps from experimental Kikuchi patterns. It potentially enables 1 more accurate orientation calculation, new pattern center refinement methods, improved dictionary-based pattern matching, and phase identification in the future. Keywords: electron diffraction, SEM, EBSD, Kikuchi band, spherical Kikuchi map, automated reconstruction, kinematic Kikuchi sphere simulation, inverse gnomonic projection 1. Introduction Diffraction-based characterization techniques have been widely adopted to probe many aspects of structure and properties of materials.
    [Show full text]
  • Automated Crystal Orientation Mapping by Precession Electron Diffraction Assisted Four-Dimensional Scanning Transmission Electron
    Automated crystal orientation mapping by precession electron diffraction assisted four-dimensional scanning transmission electron microscopy (4D-STEM) using a scintillator based CMOS detector Jiwon Jeong*, Niels Cautaerts, Gerhard Dehm and Christian H. Liebscher Department of Structure and Nano-/Micromechanics of Materials, Max-Planck Institut für Eisenforschung GmbH, Düsseldorf, 40237, Germany * Corresponding Author: [email protected] Abstract The recent development of electron sensitive and pixelated detectors has attracted the use of four-dimensional scanning transmission electron microscopy (4D-STEM). Here, we present a precession electron diffraction assisted 4D-STEM technique for automated orientation mapping using diffraction spot patterns directly captured by an in-column scintillator based complementary metal-oxide-semiconductor (CMOS) detector. We compare the results to a conventional approach, which utilizes a fluorescent screen filmed by an external CCD camera. The high dynamic range and signal-to-noise characteristics of the detector largely improve the image quality of the diffraction patterns, especially the visibility of diffraction spots at high scattering angles. In the orientation maps reconstructed via the template matching process, the CMOS data yields a significant reduction of false indexing and higher reliability compared to the conventional approach. The angular resolution of misorientation measurement could also be improved by masking reflections close to the direct beam. This is because the orientation sensitive, weak and small diffraction spots at high scattering angle are more significant. The results show that fine details such as nanograins, nanotwins and sub-grain boundaries can be 1 resolved with a sub-degree angular resolution which is comparable to orientation mapping using Kikuchi diffraction patterns.
    [Show full text]
  • Automated Nanocrystal Orientation and Phase Mapping in the Transmission Electron Microscope on the Basis of Precession Electron Diffraction
    Z. Kristallogr. 225 (2010) 103–109 / DOI 10.1524/zkri.2010.1205 103 # by Oldenbourg Wissenschaftsverlag, Mu¨nchen Automated nanocrystal orientation and phase mapping in the transmission electron microscope on the basis of precession electron diffraction Edgar F. Rauch*,I, Joaquin PortilloII, III, Stavros NicolopoulosII, Daniel BultreysII, Sergei RouvimovIII and Peter MoeckIV I SIMAP/GPM2 laboratory, CNRS-Grenoble INP, BP 46 101 rue de la Physique, 38402 Saint Martin d’He`res, France II NanoMEGAS SPRL, Boulevard Edmond Machterns No 79, Saint Jean Molenbeek, Brussels, 1080, Belgium III SERVEIS Cientificotecnics, University of Barcelona, Spain IV Nano-Crystallography Group, Department of Physics, Portland State University, and Oregon Nanoscience and Microtechnologies Institute Portland, OR 97207-0751, USA Received July 4, 2009; accepted November 13, 2009 Nanocrystals / Orientation mapping / Structural mapping / On the other hand, there is a growing need to charac- Structural fingerprinting / Structural databases / terize, map and fingerprint nanocrystalline materials at Precession electron diffraction / higher resolutions as obtainable in a transmission electron Transmission electron microscopy microscope (TEM). Consequently, the extension of orien- tation mapping facilities to transmission electron micro- Abstract. An automated technique for the mapping of na- scopes (TEM) was attempted several times. Both Kikuchi nocrystal phases and orientations in a transmission electron lines [1–3] and Bragg diffraction (spot) patterns [2, 4] microscope is described. It is primarily based on the pro- were used to extract the orientation and phase information jected reciprocal lattice geometry that is extracted from elec- from the patterns. Such techniques have become more fea- tron diffraction spot patterns. Precession electron diffraction sible due to the availability of focused ion beam (FIB) patterns are especially useful for this purpose.
    [Show full text]
  • The Application of Electron Backscatter Diffraction and Orientation Contrast Imaging in the SEM to Textural Problems in Rocks
    American Mineralogist, Volume 84, pages 1741–1759, 1999 The application of electron backscatter diffraction and orientation contrast imaging in the SEM to textural problems in rocks DAVID J. PRIOR,1,* ALAN P. BOYLE,1 FRANK BRENKER,2 MICHAEL C. CHEADLE,1 AUSTIN DAY,3 GLORIA LOPEZ,4 LUCA PERUZZO,6 GRAHAM J. POTTS,1 STEVE REDDY,5 RICHARD SPIESS,6 NICK E. TIMMS,7 PAT TRIMBY,8 JOHN WHEELER,1 AND LENA ZETTERSTRÖM9 1Department of Earth Sciences, Liverpool University, L69 3BX, U.K. 2Institut für Mineralogie und Geochemie, Universität zu Köln, Zülpicher Strasse 49b, 50674 Köln, Germany 3HKL technology, Blåkildevej 17k, 9500 Hobro, Denmark 4Departamento de Geología, Universidad de Chile, Santiago, Chile 5Tectonics Special Research Centre, School of Applied Geology, Curtin University of Technology, Perth, WA 6102, Australia 6Department of Mineralogy and Petrology, University of Padua, Italy 7Department of Geology, James Cook University, Townsville, Australia 8Department of Geology, Utrecht University, Utrecht, Netherlands 9Laboratory for Isotope Geology, Swedish Museum of Natural History, Stockholm, Sweden ABSTRACT In a scanning electron microscope (SEM) an electron beam sets up an omni-directional source of scattered electrons within a specimen. Diffraction of these electrons will occur simultaneously on all lattice planes in the sample and the backscattered electrons (BSE), which escape from the specimen, will form a diffraction pattern that can be imaged on a phosphor screen. This is the basis of electron backscatter diffraction (EBSD). Similar diffraction effects cause individual grains of different orien- tations to give different total BSE. SEM images that exploit this effect will show orientation contrast (OC). EBSD and OC imaging are SEM-based crystallographic tools.
    [Show full text]
  • Paradigm Shift in Electron-Based Crystallography Via Machine Learning
    Paradigm shift in electron-based crystallography via machine learning Kevin Kaufmann1, Chaoyi Zhu2*, Alexander S. Rosengarten1*, Daniel Maryanovsky3, Tyler J. Harrington2, Eduardo Marin1, and Kenneth S. Vecchio1,2 1Department of NanoEngineering, UC San Diego, La Jolla, CA 92093, USA 2Materials Science and Engineering Program, UC San Diego, La Jolla, CA 92093, USA 3Department of Cognitive Science, UC San Diego, La Jolla, CA 92093, USA *These authors contributed equally to this work. Abstract Accurately determining the crystallographic structure of a material, organic or inorganic, is a critical primary step in material development and analysis. The most common practices involve analysis of diffraction patterns produced in laboratory X-ray diffractometers, transmission electron microscopes, and synchrotron X-ray sources. However, these techniques are slow, require careful sample preparation, can be difficult to access, and are prone to human error during analysis. This paper presents a newly developed methodology that represents a paradigm change in electron diffraction-based structure analysis techniques, with the potential to revolutionize multiple crystallography-related fields. A machine learning-based approach for rapid and autonomous identification of the crystal structure of metals and alloys, ceramics, and geological specimens, without any prior knowledge of the sample, is presented and demonstrated utilizing the electron backscatter diffraction technique. Electron backscatter diffraction patterns are collected from materials with well-known crystal structures, then a deep neural network model is constructed for classification to a specific Bravais lattice or point group. The applicability of this approach is evaluated on diffraction patterns from samples unknown to the computer without any human input or data filtering. This is in comparison to traditional Hough transform electron backscatter diffraction, which requires that you have already determined the phases present in your sample.
    [Show full text]