"Gain, Sensitivity and Stability of Linear Two Port
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Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators
Effect of Load Impedance on the Firas M. Ali , Suhad H. Jasim Issue No. 39/2016 Performance of Microwave… Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators Firas Mohammed Ali Al-Raie [email protected] University of Technology - Department of Electrical Engineering - Baghdad - Iraq Suhad Hussein Jasim [email protected] University of Technology - Department of Electrical Engineering - Baghdad - Iraq Abstract: In microwave negative resistance oscillators, the RF transistor presents impedance with a negative real part at either of its input or output ports. According to the conventional theory of microwave negative resistance oscillators, in order to sustain oscillation and optimize the output power of the circuit, the magnitude of the negative real part of the input/output impedance should be maximized. This paper discusses the effect of the circuit’s load impedance on the input negative resistance and other oscillator performance characteristics in common base microwave oscillators. New closed-form relations for the optimum load impedance that maximizes the magnitude of the input negative resistance have been derived analytically in terms of the Z- parameters of the RF transistor. Furthermore, nonlinear CAD simulation is carried out to show the deviation of the large-signal Journal of Al Rafidain University College 427 ISSN (1681-6870) Effect of Load Impedance on the Firas M. Ali , Suhad H. Jasim Issue No. 39/2016 Performance of Microwave… optimum load impedance from its small-signal value. It has been shown also that the optimum load impedance for maximum negative input resistance differs considerably from its value required for maximum output power under large-signal conditions. -
An Investigation of the Up-Converter Parametric Amplifier
THE RICE INSTITUTE AN INVESTIGATION OF THE UP-CONVERTER PARAMETRIC AMPLIFIER CHARLES SIDNEY BURRUS A THESIS SUBMITTED TO THE FACULTY IN PARTIAL FULFILLMENT CT THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE Houston} Texas April I960 CHAAMJU ABSTRACT A model of the up-converter parametric amplifier is developed in order to derive expressions for admittance, gain, bandwidth, and noise figure. The expressions derived are presented in such a way as to show a good analogy to the standard coupled circuit. This allows use of the concepts of coefficient of coupling, critical coupling, and stagger-tuning and their effects upon bandwidth. It is shown that the gain of the amplifier is equal to the ratio of output frequency to input frequency and is constant, independent of matching, resonance, or pump level. The derived expression for noise figure indicates that the principal noise source is the input tank and that heavy loading of both tanks improves the noise figure. The results of experimental tests are used to verify the relations derived and show the limitations of the model and the amplifier. Also the possibility of using the experimental circuit as a practical low- noise amplifier is examined. i ACKNOWLEDGEMENTS The author would like to express his gratitude to Professor C. R. Wisohmeyer for the suggestion of this problem and for his assistance in the completion of it. Also the help of Drs. P. E. Pfeiffer, M. M. Graham, and E. W. Sard is appreciated, as is the technical help afforded by W, R. Peters and the preparation of manuscript by Mrs. -
UC Berkeley UC Berkeley Electronic Theses and Dissertations
UC Berkeley UC Berkeley Electronic Theses and Dissertations Title Millimeter-Wave Circuits for 60GHz and Beyond Permalink https://escholarship.org/uc/item/7hj895xx Author Afshar, Bagher Publication Date 2010 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California Millimeter-Wave Circuits for 60GHz and Beyond by Bagher Afshar A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering–Electrical Engineering and Computer Science in the GRADUATE DIVISION of the UNIVERSITY of CALIFORNIA at BERKELEY Committee in charge: Professor Ali M. Niknejad, Chair Professor Jan Rabaey Professor Paul Wright Fall 2010 Millimeter-Wave Circuits for 60GHz and Beyond Copyright Fall 2010 by Bagher Afshar 1 Abstract Millimeter-Wave Circuits for 60GHz and Beyond by Bagher Afshar Doctor of Philosophy in Engineering–Electrical Engineering and Computer Science University of California at Berkeley Professor Ali M. Niknejad, Chair Research in the mm-wave band using CMOS and SiGe technologies has gained momentum over the past few years. Millimeter-wave circuits are expected to enter consumer electronics in the near future. 60GHz circuits have the potential to be used in high definition wireless video transmission and high data-rate point-to-point communication. 77GHz has been explored for automotive radar and is expected to become more ubiquitous in coming years. 90GHz has been investigated for imaging and remote sensing applications. Raw silicon transistor performance has improved dramatically in the past decade, which has spurred much of the research. The potential low cost of silicon ICs, especially CMOS, is great motivation to design mm-wave circuits for volume production. -
Power Gain in Feedback Amplifiers
Document ROOa11alcov Research Lboyatory of le:ton cs aa jVac&hU8;bt Is "tituteof TWoboogy'l POWER GAIN IN FEEDBACK AMPLIFIERS S. J. MASON 10plft TECHNICAL REPORT NO. 257 AUGUST 25, 1953 RESEARCH LABORATORY OF ELECTRONICS MASSACHUSETTS INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS The Research Laboratory of Electronics is an interdepart- mental laboratory of the Department of Electrical Engineering and the Department of Physics. The research reported in this document was made possible in part by support extended the Massachusetts Institute of Tech- nology, Research Laboratory of Electronics, jointly by the Army Signal Corps, the Navy Department (Office of Naval Research), and the Air Force (Air Materiel Command), under Signal Corps Contract DA36-039 sc-100, Project 8-102B-0; De- partment of the Army Project 3-99-10-022. _ ___ ___ MASSACHUSETTS INSTITUTE OF TECHNOLOGY RESEARCH LABORATORY OF ELECTRONICS Technical Report No. 257 August 25, 1953 POWER GAIN IN FEEDBACK AMPLIFIERS S. J. Mason Abstract A linear transistor model (or other linear two-terminal-pair device) is imbedded in a lossless passive network N and the properties of the complete system, as measured at two specified terminal pairs, are described by the open-circuit impedances Zll1 Z12' Z21, Z22' The quantity IZ 2 1 - Z1212 U 4(RllR22 - R12R21 ) where Rjk is the real part of Zjk is defined as the unilateral gain of the transistor. Quantity U is independent of the choice of N and is (consequently) invariant under per- mutations of the three transistor terminals and also under replacement of the open- circuit impedances by short-circuit admittances. -
Power Gain in Feedback Amplifiers, a Classic Revisited
864 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 40, NO. 5, MAY 1992 Editor’ s Note This paper is the first in what we hope will become a series. “Classics Revisited” will appear periodically in the TRANSACTIONS;these papers will reevaluate the substance and im- portance of recognized classics, in terms of their impact on modern microwave technology. We expect that the tutorial value of these papers, and their documentation of the creative process in our technology, will make them very valuable to our readership. This series was proposed by Dr. Gupta, so it is appropriate that he present the first paper. Others interested in preparing a paper in this series should contact the MTT editor or Dr. Gupta. Because such papers are part historical and part technical, only papers that exhibit a high degree of both technical and scholarly value will be accepted. Power Gain in Feedback Amplifiers, a Classic Revisited Madhu S. Gupta, Fellow, IEEE Abstract-This paper is a tutorial review of a classic paper of gain for a linear twoport, and discussed some of its prop- the same title authored by Samuel J. Mason, and published in erties. The unilateral power gain Uis the maximum power 1954. That paper was the first to define a unilateral power gain for a linear two-port, and to prove that this gain is invariant gain that can be obtained from the twoport, after it has with respect to linear lossless reciprocal four-port embeddings, been made unilateral with the help of a lossless and recip- thereby making it useful as a figure of merit intrinsic to the rocal embeddding network (which provides the required device.