DOCSLIB.ORG

DOE Final Report on Grant DE-FG02-03ER46063 “The Controlled Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization” August 2003 - February 2007

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
DOE Final Report on Grant DE-FG02-03ER46063 “The Controlled Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization” August 2003 - February 2007 DOE Final Report on Grant DE-FG02-03ER46063 “The Controlled Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization” August 2003 - February 2007 Principal Investigator: Darrell G. Schlom Period Covered by this Final Report: August 2003 - February 2007 DOE Award Number: DE-FG02-03ER46063 Amount of Unexpended Funds: $0 The research enabled by this DOE grant led to 13 publications in leading refereed journals including Physical Review Letters and Applied Physics Letters as well as feature articles in the Journal of the American Ceramic Society and Physik Journal (the German equivalent of Physics Today distributed to all members of the German Physical Society) on the controlled synthesis of metastable oxides utilizing epitaxy and epitaxial stabilization. In total our results fill over 100 pages of archived journals and are attached. Much of our work has been performed in collaboration with other DOE researchers. Specifically, we have active collaborations with (please see publications on the next page) with the following DOE groups. DOE COLLABORATORS ON THE WORK SUPPORTED BY THIS DOE GRANT DOE Laboratory Collaborators Argonne National Laboratory Stephen K. Streiffer, Mark A. Zurbuchen, and Dillon D. Fong Pacific Northwest National Laboratory Scott A. Chambers Los Alamos National Laboratory Marilyn E. Hawley PERSONNEL SUPPORTED BY THIS DOE GRANT Name Position Darrell G. Schlom Principal Investigator Wei Tian Postdoctoral Researcher PUBLICATIONS AND PRESENTATIONS The support from this DOE program has led to the publications listed below and attached to the end of this document. Publications 1. M.A. Zurbuchen, Y. Jia, S. Knapp, A.H. Carim, D.G. Schlom, and X.Q. Pan, “Defect Generation by Preferred Nucleation in Epitaxial Sr2RuO4 / LaAlO3,” Applied Physics Letters 83 (2003) 3891-3893. 1 2. A.V. Pogrebnyakov, J.M. Redwing, S. Raghavan, V. Vaithyanathan, D.G. Schlom, S.Y. Xu, Q. Li, D.A. Tenne, A. Soukiassian, X.X. Xi, M.D. Johannes, D. Kasinathan, W.E. Pickett, J.S. Wu, and J.C.H. Spence, “Enhancement of Superconducting Transition Temperature of MgB2 by a Strain-Induced Bond-Stretching Mode Softening,” Physical Review Letters 93 (2004) 147006-1 - 147006-4. 3. A.V. Pogrebnyakov, X.X. Xi, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J.E. Giencke, C.B. Eom, J. Chen, Y.F. Hu, Y. Cui, and Q. Li, “Properties of MgB2 Thin Films with Carbon Doping,” Applied Physics Letters 85 (2004) 2017-2019. 4. D.A. Tenne, X.X. Xi, Y.L. Li, L.Q. Chen, A. Soukiassian, M.H. Zhu, A.R. James, J. Lettieri, D.G. Schlom, W. Tian, and X.Q. Pan, “Absence of Low-Temperature Phase Transitions in Epitaxial BaTiO3 Thin Films,” Physical Review B 69 (2004) 174101-1 - 174101-5. 5. X.X. Xi, A.V. Pogrebnyakov, X.H. Zeng, J.M. Redwing, S.Y. Xu, Q. Li, Z.K. Liu, J. Lettieri, V. Vaithyanathan, D.G. Schlom, H.M. Christen, H.Y. Zhai, and A. Goyal, “Progress in the Deposition of MgB2 Thin Films,” Superconductor Science and Technology 17 (2004) S196-S201 and in: Applied Superconductivity 2003: Proceedings of the Sixth European Conference on Applied Superconductivity, IOP Vol. 181 (Institute of Physics, Bristol, 2004), pp. 37-44. 6. J. Mannhart and D.G. Schlom, “Oxide—Tausendsassa für die Elektronik,” Physik Journal 4 (2005) 45-51. 7. A. Venimadhav, A. Soukiassian, D.A. Tenne, Q. Li, X.X. Xi, D.G. Schlom, R. Arroyave, Z.K. Liu, H.P. Sun, X.Q. Pan, M.Y. Lee, and N.P. Ong, “Structural and Transport Properties of Epitaxial NaxCoO2 Thin Films,” Applied Physics Letters 87 (2005) 172104-1 – 172104-3. 8. P. Orgiani, Y. Cui, A.V. Pogrebnyakov, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, and X.X. Xi, “Investigations of MgB2 / MgO and MgB2 / AlN Heterostructures for Josephson Devices,” IEEE Transactions on Applied Superconductivity 15 (2005) 228-231. 9. B.T. Liu, X.X. Xi, V. Vaithyanathan, and D.G. Schlom, “MgB2 Thin Films Grown at Different Temperatures by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 15 (2005) 3249-3252. 10. M.A. Zurbuchen, J. Lettieri, Y. Jia, A.H. Carim, S.K. Streiffer, and D.G. Schlom, “Out-of-phase Boundary (OPB) Nucleation in Layered Oxides,” in: Ferroelectric Thin Films XIII edited by R. Ramesh, J.-P. Maria, M. Alexe, and V. Joshi, Vol. 902E (Materials Research Society, Warrendale, 2006), pp. T10-55.1 – T10-55.6. 11. W. Tian, J.H. Haeni, D.G. Schlom, E. Hutchinson, B.L. Sheu, M.M. Rosario, P. Schiffer, Y. Liu, M.A. Zurbuchen, and X.Q. Pan, “Epitaxial Growth and Magnetic Properties of the First Five Members of the Layered Srn+1RunO3n+1 Oxide Series,” Applied Physics Letters 90 (2007) 022507- 1 – 022507-3. 12. M.A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk, D.J. Comstock, S. Knapp, A.H. Carim, and D.G. Schlom, “Morphology, Structure, and Nucleation of Out-of-Phase Boundaries (OPBs) in Epitaxial Films of Layered Oxides,” Journal of Materials Research 22 (2007) 1439-1471. 13. M.A. Zurbuchen, R.S. Freitas, M.J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, M.D. Biegalski, G.H. Mehta, D.J. Comstock, J.H. Lee, Y. Jia, and D.G. Schlom, “Synthesis and Characterization of an n = 6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi7(Mn,Ti)6O21,” Applied Physics Letters 91 (2007) 033113-1 – 033113-3. 14. D.G. Schlom, L.Q. Chen, X.Q. Pan, A. Schmehl, and M.A. Zurbuchen, “A Thin Film Approach to Engineering Functionality into Oxides,” Journal of the American Ceramic Society 91 (2008) 2429-2454. (Feature Article with Journal Cover) 2 APPLIED PHYSICS LETTERS VOLUME 83, NUMBER 19 10 NOVEMBER 2003 Õ Defect generation by preferred nucleation in epitaxial Sr2RuO4 LaAlO3 Mark A. Zurbuchen,a) Yunfa Jia, Stacy Knapp, Altaf H. Carim,b) and Darrell G. Schlom Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16803-6602 X. Q. Pan Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 ͑Received 27 May 2003; accepted 12 September 2003͒ ͑ ͒ The atomic structure of the film–substrate interface of a 001 Sr2RuO4/(100)c LaAlO3 film, determined by high-resolution transmission electron microscopy and simulation, is reported. The structure of superconductivity-quenching ⌬cϷ0.25 nm out-of-phase boundaries ͑OPBs͒ in the film is also reported. Growth in one region on the La-terminated surface is observed to nucleate with a SrO layer. Because two structurally equivalent SrO layers exist within the unit cell, two neighboring nuclei with differing growth order (SrO-RuO2-SrO or RuO2-SrO-SrO) will nucleate an OPB where their misaligned growth fronts meet. Strategies to avoid OPB generation by this mechanism are suggested, which it is hoped may ultimately lead to superconducting Sr2RuO4 films. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1624631͔ Sr2RuO4 is the only known copper-free layered perov- In the heteroepitaxial growth of layered structures, sub- skite superconductor,1 and is believed to have an unconven- strate surface quality has a great effect on final film quality.14 tional spin-triplet (p-wave͒ symmetry of the superconduct- Advances in substrate engineering have enabled the prepara- 2 14,15 ing order parameter. Electrical transport studies of Sr2RuO4 tion of substrates with known atomic terminations. Some are expected to further the understanding of the super- disagreement currently exists regarding the atomic termina- 3 ͑ ͒ 16–19 conducting state. Sr2RuO4 is well lattice-matched to tion of 001 LaAlO3 . YBa2Cu3O7Ϫ␦ and other cuprate superconductors. Epitaxial It would be useful experimentally to determine which heterostructures would be useful for probing the interaction atomic layers are energetically preferred for the nucleation of between d-wave and p-wave superconductors. Although the Sr2RuO4 on a given substrate, so that high-quality films can 4,5 ͓ epitaxial growth of Sr2RuO4 films and epitaxial be grown by sequential deposition techniques e.g., 6 ͑ ͔͒ YBa2Cu3O7Ϫ␦ /Sr2RuO4 heterostructures have been dem- molecular-beam epitaxy MBE . Few studies of the pre- onstrated, no superconducting Sr2RuO4 films have been ferred nucleation layer of epitaxial thin films of complex reported.4,5 As we show in this letter, greater attention to oxides on substrates with known termination have been nucleation and growth is important to reducing defects and to reported.20–22 Understanding defect nucleation mechanisms possibly achieving superconductivity in Sr2RuO4 films. and microstructural development in the growth of complex Both impurities and crystallographic defects can quench oxide films will allow greater control over their growth. Sub- superconductivity in Sr2RuO4 . As little as 300 ppm of alu- strate surface features have been demonstrated to result in minum is sufficient to destroy superconductivity.7 Crystallo- micron-scale crystallographic defects in some similarly graphic defects that quench superconductivity include out- structured layered perovskites (nϭ2 Aurivillius phases͒.23,24 of-phase boundaries ͑OPBs͒.8 These are translation In this letter, the structure of the film–substrate interface of ͑ ͒ 16 boundaries consisting of a fractional misalignment in the an epitaxial 001 Sr2RuO4 /(001)c LaAlO3 film is re- long axis (c-axis͒ direction between two neighboring regions ported, and the mechanism whereby the preferred nucleation of the same crystal. Because any interruption of the structure layer can lead to the generation of superconductivity- can act as a pair-breaker, a linear density of OPBs on the quenching OPBs is described. ␰ ␰ ͑ ͒ order of 1/ ab(0), where ab(0) is the superconducting co- (001)c Sr2RuO4 epitaxial films were grown on 001 ͑ ͒ ␰ Ϸ 9 16 ͑ ͒ herence length in the 001 plane, ab(0) 66 nm, renders a LaAlO3 substrates by pulsed-laser deposition PLD at high-purity film nonsuperconducting.9 A correlation between 1000 °C in a radiatively heated sample chamber.
Load more

Recommended publications
  • Title of Paper Goes Here
    Template for APEX (Jan. 2014) Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal Jung-Won Chang1, Joon Sung Lee1*, Tae Ho Lee1, Jinhee Kim2, and Yong-Joo Doh1* 1Department of Applied Physics, Korea University Sejong Campus, Sejong 339-700, Republic of Korea 2Korea Research Institute of Standards and Science, Daejeon 305-600, Republic of Korea E-mail: [email protected], [email protected] We report controlled formation of sub-100 nm-thin electron channels in SrTiO3 by doping with oxygen vacancies induced by Ar+-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm2V1s1), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics. 1 Template for APEX (Jan. 2014) 1) SrTiO3 (STO) has the potential to become a key ingredient in oxide electronics owing to its intriguing electronic properties in addition to its versatility as a perovskite substrate for oxide heterostructures.2,3) The recent advancement in studies of the low-dimensional electronic system formed at the heterointerface between strontium titanate (STO) and 4) lanthanum aluminate (LaAlO3; LAO) has led to immense development and success in both understanding fundamental physics and developing new oxide electronic devices. When pure and stoichiometric, STO is an insulator with a large band gap of 3.2 eV. However, it can be made into an n-type conductor by substitutional doping with cations5,6) such as Nb and La or by introduction of oxygen vacancies.7) Especially, Ar+-ion irradiation on the crystal surface8-13) introduces oxygen vacancies and enables us to pattern conducting channels selectively on STO substrates using photolithography.
    [Show full text]
  • Evidence for High-Temperature Superconductivity in Doped Laser-Processed Sr-Ru-O
    Evidence for High-Temperature Superconductivity in Doped Laser-Processed Sr-Ru-O A. M. Gulian1, K. S. Wood2, D. Van Vechten2, J. Claassen2, R. J. Soulen, Jr.2, S. Qadri2, M. Osofsky2, A. Lucarelli3, G. Lüpke3, G. R. Badalyan4, V. S. Kuzanyan4, A. S. Kuzanyan4, and V. R. Nikoghosyan4 Abstract: We have discovered that samples of a new material produced by special processing of crystals of Sr2RuO4 (which is known to be a triplet superconductor with Tc values ~1.0-1.5K) exhibit signatures of superconductivity (zero DC resistance and expulsion of magnetic flux) at temperatures exceeding 200K. The special processing includes deposition of a silver coating and laser micromachining; Ag doping and enhanced oxygen are observed in the resultant surface layer. The transition, whether measured resistively or by magnetic field expulsion, is broad. When the transition is registered by resistive methods, the critical temperature is markedly reduced when the measuring current is increased. The resistance disappears by about 190K. The highest value of Tc registered by magneto-optical visualization is about 220K and even higher values (up to 250K) are indicated from the SQUID-magnetometer measurements. 1) Physics Art Frontiers, Ashton, Maryland, 20861-9747 2) Naval Research Laboratory, Washington DC, 20375-0001 3) The College of William and Mary, Virginia, 23185 4) Physics Research Institute, Ashtarak, 378410, Armenia 1 1. Introduction. Laser ablation is one of the non-traditional methods of materials processing that may substantially alter the physical properties of samples. In addition to removing atoms from the surface, it may leave behind a recrystallized surface layer of altered composition and properties.
    [Show full text]
  • GROWTH and CHARACTERIZATION of Sr2 Ruo4 and Sr2 Rho4
    GROWTH AND CHARACTERIZATION OF Sr2RuO4 AND Sr2RhO4 GROWTH AND CHARACTERIZATION OF Sr2RuO4 AND Sr2RhO4 By KEVIN D. MORTIMER, B. Sc. A Thesis Submitted to the School of Graduate Studies in Partial Fulfillment of the Requirements for the Degree Master of Science McMaster University © Copyright by Kevin D. Mortimer, 2014, unless otherwise noted. MASTER OF SCIENCE (2014) (Physics and Astronomy) McMaster University, Hamilton, Ontario TITLE: Growth and characterization of Sr2RuO4 and Sr2RhO4 AUTHOR: Kevin D. Mortimer, B. Sc. (Physics), Queen's University SUPERVISOR: Dr. Thomas Timusk NUMBER OF PAGES: xii, 122 ii Abstract We report on the growth and characterization of strontium ruthenate (214) (Sr2RuO4) and strontium rhodate (214) (Sr2RhO4) in efforts to test their agreement with Landau-Fermi liquid theory using optical measurements. We begin by reviewing the theory of Landau-Fermi liquids and the frequency and temperature dependent conductivities. We review existing work on both Sr2RuO4 and Sr2RhO4 including evidence of agreement with Landau-Fermi liquid theory. We also describe optical floating zone crystal growth and the exact procedures we used to prepare samples of both Sr2RuO4 and Sr2RhO4 via optical floating zone. The resulting Sr2RuO4 crystals were characterized using AC susceptibility measurements and Sr2RhO4 by powder diffraction, single crystal diffraction, and SQUID magnetization measurements. Finally, early optical reflectivity measurements at low temperatures are presented. iii Acknowledgments Very few efforts in science are made individually. Most scientists, researchers, engineers, whether they are hobbiests or professionals, have a wide support network in place with whom they can consult, investigate, cross-reference, collaborate and more. Though the writing of a thesis is an individual effort, the gathering of data is not.
    [Show full text]
  • Manganite-Based Devices: Opportunities, Bottlenecks and Challenges
    Downloaded from http://rsta.royalsocietypublishing.org/ on October 30, 2018 Manganite-based devices: opportunities, bottlenecks and challenges By T. Venkatesan, M. Rajeswari, Zi-Wen Dong, S. B. Ogale and R. Ramesh NSF-MRSEC on Oxides and Surfaces, and Centre for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, USA Since the rejuvenation of interest in the rare earth manganites owing to their poten- tial use as magnetoresistive sensors, there has been adequate research to arrive at some evaluation of the potential for these materials in a variety of technologies that would use the peculiar properties of these materials. The magnetic field sensitivity of the transport properties, the strong metal insulator transition at the Curie temper- ature, the electric field polarizability of the material and its subsequent effect on the transport properties, the half metallicity of the electronic bands, etc., are properties of the rare earth manganites that could be exploited in a variety of devices. In this review we explore the various interesting technological avenues that are being pur- sued and address the uniqueness of the material that may enable a given technology as well as the various bottlenecks that will have to be overcome in order to suc- cessfully compete with the existing technologies. As is the case with many emerging materials technologies, the devices also serve as a vehicle for further understanding of the fundamental mechanisms behind the basic properties of the materials. Keywords:
    [Show full text]
  • Arxiv:1702.07144V3 [Cond-Mat.Str-El] 23 Jul 2017 Rect Measurements of Thermal Diffusivity[15] Have Pro- Fig
    Metallicity without quasi-particles in room-temperature strontium titanate Xiao Lin1, Carl Willem Rischau1, Lisa Buchauer1, Alexandre Jaoui1, Beno^ıtFauqu´e1;2 and Kamran Behnia1 (1) Laboratoire Physique et Etude de Mat´eriaux(CNRS-UPMC), ESPCI Paris, PSL Research University, 75005 Paris, France (2) JEIP, USR 3573 CNRS, Coll`egede France, PSL Research University, 75005 Paris, France (Dated: April 28, 2017) Cooling oxygen-deficient strontium titanate to liquid-helium temperature leads to a decrease in its electrical resistivity by several orders of magnitude. The temperature dependence of resistivity follows a rough T3 behavior before becoming T2 in the low-temperature limit, as expected in a Fermi liquid. Here, we show that the roughly cubic resistivity above 100K corresponds to a regime where the quasi-particle mean-free-path is shorter than the electron wave-length and the interatomic distance. These criteria define the Mott-Ioffe-Regel limit. Exceeding this limit is the hallmark of strange metallicity, which occurs in strontium titanate well below room temperature, in contrast to other perovskytes. We argue that the T3-resistivity cannot be accounted for by electron-phonon scattering `ala Bloch-Gruneisen and consider an alternative scheme based on Landauer transmis- sion between individual dopants hosting large polarons. We find a scaling relationship between carrier mobility, the electric permittivity and the frequency of transverse optical soft mode in this temperature range. Providing an account of this observation emerges as a challenge to theory. I. INTRODUCTION cubic[17, 22]. In this regime, the mean-free-path of car- riers becomes shorter than their wavelength. At room The existence of well-defined quasi-particles is taken temperature, it falls well below the interatomic distance, for granted in the Boltzmann-Drude picture of electronic the lowest conceivable length scale.
    [Show full text]
  • Influence of the Epitaxial Strain on Magnetic Anisotropy in LSMO Thin Films for Spintronics Applications Sandeep Kumar Chaluvadi
    Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications Sandeep Kumar Chaluvadi To cite this version: Sandeep Kumar Chaluvadi. Influence of the epitaxial strain on magnetic anisotropy inLSMO thin films for spintronics applications. Electronics. Normandie Université, 2017. English. NNT: 2017NORMC248. tel-01717569 HAL Id: tel-01717569 https://tel.archives-ouvertes.fr/tel-01717569 Submitted on 26 Feb 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THESE Pour obtenir le diplôme de doctorat Spécialité ELECTRONIQUE, MICROELECTRONIQUE, OPTIQUE ET LASERS, OPTOELECTRONIQUE MICROONDES Préparée au sein de l’ENSICAEN et de l’UNICAEN Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications Présentée et soutenue par Sandeep Kumar CHALUVADI Thèse soutenue publiquement le 13 décembre 2017 devant le jury composé de M. VIRET Michel Chercheur (HDR), CEA Saclay Rapporteur M. BELMEGUENAI Mohamed Maître de conférences (HDR), Université Paris 13 Rapporteur Mme MOUGIN Alexandra Directrice de recherches CNRS, Université Paris 11 Examinateur M. MAZALEYRAT Frédéric Professeur des universités, ENS Cachan Examinateur M. PERNA Paolo Chercheur, IMDEA Madrid Examinateur Mme MECHIN Laurence Directrice de recherches CNRS, Université Caen Normandie Directeur de thèse Thèse dirigée par Laurence MECHIN, laboratoire GREYC (UMR 6072) iii Contents List of Abbreviations ..............................................................................................................
    [Show full text]
  • Two-Dimensional Electron Layers in Perovskite Oxides Cover
    Two-dimensional electron layers in perovskite oxides Cover Stairstep twinning in lanthanum aluminate (LaAlO3), one of the main constituents of the perovskite heterostructures discussed in this thesis. Image was taken by Michael W. Davidson of the Florida State University and is used with permission. Ph.D. committee Chairman and secretary Prof. dr. G. van der Steenhoven (University of Twente) Supervisor Prof. dr. ing. D.H.A. Blank (University of Twente) Assistant supervisor Dr. ing. A.J.H.M. Rijnders (University of Twente) Members Prof. dr. Ir. H. Hilgenkamp (University of Twente) Prof. dr. P.J. Kelly (University of Twente) Prof. H.Y. Hwang (University of Tokyo, Japan) Prof. J.-M. Triscone (University of Geneva, Switzerland) Prof. dr. J. Aarts (Leiden University) Prof. dr. M.S. Golden (University of Amsterdam) The research described in this thesis was performed with the Inorganic Materials Science group, the MESA+ Research Institute at the University of Twente, the Netherlands and Hwang lab at the University of Tokyo, Japan as a part of the Nanoelectronic Materials flagship (TMM.6996) of the Dutch NanoNed national nanotechnology R&D initiative. This research was supported by NanoNed, a na- tional nanotechnology program coordinated by the Dutch Ministry of Economic Affairs. G.W.J. Hassink Two-dimensional electron layers in perovskite oxides Ph.D. thesis University of Twente, Enschede, the Netherlands. ISBN: 978-90-365-2918-1 DOI: 10.3990/1.9789036529181 Printed by W¨ohrmannPrint Service, Zutphen, the Netherlands Copyright c G.W.J. Hassink, 2009 TWO-DIMENSIONAL ELECTRON LAYERS IN PEROVSKITE OXIDES PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Universiteit Twente, op gezag van de rector magnificus, Prof.
    [Show full text]
  • Preparation and Characterization of Perovskite Structure Lanthanum Gallate and Lanthanum Aluminate Based Oxides
    Preparation and characterization of perovskite structure lanthanum gallate and lanthanum aluminate based oxides Shuai Li Doctoral Thesis Department of Materials Science and Engineering Division of Ceramics Royal Institute of Technology Stockholm, Sweden 2009 Akademisk avhandling som med tillstånd av Kungliga Tekniska Högskolan i Stockholm, framlägges för offentlig granskning för avläggande av teknologie doktorsexamen, fredagen den 12 juni 2009, kl. 10.00 i B2, Brinellvägen 23, KTH, Stockholm. ISRN KTH/MSE--09/18--SE+CER/AVH ISBN 978-91-7415-324-8 Shuai Li Preparation and characterization of perovskite structure lanthanum gallate and lanthanum aluminate based oxides Division of Ceramics Department of Materials Science and Engineering School of Industrial Engineering and Management Royal Institute of Technology SE-100 44 Stockholm Sweden ISRN KTH/MSE--09/18--SE+CER/AVH ISBN 978-91-7415-324-8 © Shuai Li ABSTRACT The present work was initiated to study the synthesis and properties of lanthanum gallate based oxides as intermediate temperature electrolyte for solid oxide fuel cells. The wet chemical method, polymer complexing route, was used to prepare the precursor powders. To further investigate the polymer complexing method, it was also applied to the preparation of lanthanum aluminate based oxides. Single perovskite phase La0.8Sr0.2Ga0.83Mg0.17O2.815 can be prepared by the polymer complexing method using PVA as complexing agent. The thermal decomposition of the precursor powder undergoes three stages. While complete decomposition of the precursor is obtained at 1000°C. Further investigation of LaGaO3 doped with various amounts Sr or/and Mg was conducted. Three secondary phases were identified by X- ray diffraction, e.g.
    [Show full text]
  • Atomically Resolved Surface Phases of La0.8Sr0.2Mno3(110) Thin Films
    Journal of Materials Chemistry A PAPER View Article Online View Journal | View Issue Atomically resolved surface phases of La0.8Sr0.2MnO3(110) thin films† Cite this: J. Mater. Chem. A, 2020, 8, 22947 Giada Franceschi, Michael Schmid, Ulrike Diebold and Michele Riva * The atomic-scale properties of lanthanum–strontium manganite (La1ÀxSrxMnO3Àd, LSMO) surfaces are of high interest because of the roles of the material as a prototypical complex oxide, in the fabrication of spintronic devices and in catalytic applications. This work combines pulsed laser deposition (PLD) with atomically resolved scanning tunneling microscopy (STM) and surface analysis techniques (low-energy electron diffraction – LEED, X-ray photoelectron spectroscopy – XPS, and low-energy He+ ion scattering – LEIS) to assess the atomic properties of La0.8Sr0.2MnO3(110) surfaces and their dependence on the surface composition. Epitaxial films with 130 nm thickness were grown on Nb-doped SrTiO3(110) and their near-surface stoichiometry was adjusted by depositing La and Mn in sub-monolayer amounts, quantified with a movable quartz-crystal microbalance. The resulting surfaces were equilibrated at 700 C under 0.2 mbar O2, i.e., under conditions that bridge the gap between ultra-high vacuum and the Creative Commons Attribution 3.0 Unported Licence. Received 18th July 2020 operating conditions of high-temperature solid-oxide fuel cells, where LSMO is used as the cathode. The Accepted 31st August 2020 atomic details of various composition-related surface phases have been unveiled. The phases are DOI: 10.1039/d0ta07032g characterized by distinct structural and electronic properties and vary in their ability to accommodate rsc.li/materials-a deposited cations.
    [Show full text]
  • Sign Reversal of Magnetoresistance in a Perovskite Nickelate by Electron Doping
    PHYSICAL REVIEW B 94, 235124 (2016) Sign reversal of magnetoresistance in a perovskite nickelate by electron doping Koushik Ramadoss,1,* Nirajan Mandal,2,3 Xia Dai,4 Zhong Wan,2 You Zhou,5 Leonid Rokhinson,2,3,6 Yong P. Chen,2,3,6 Jiangpin Hu,2 and Shriram Ramanathan1 1School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA 2Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA 3Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA 4Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China 5School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA 6School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA (Received 31 July 2016; revised manuscript received 14 November 2016; published 9 December 2016) We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electron-doped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Undoped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear nonsaturating positive MR ∼ 0.2% at 50 K. The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.
    [Show full text]
  • Jean-Francois Mercure Phd Thesis
    THE DE HAAS VAN ALPHEN EFFECT NEAR A QUANTUM CRITICAL END POINT IN SR3RU2O7 Jean-François Mercure A Thesis Submitted for the Degree of PhD at the University of St. Andrews 2008 Full metadata for this item is available in the St Andrews Digital Research Repository at: https://research-repository.st-andrews.ac.uk/ Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/683 This item is protected by original copyright This item is licensed under a Creative Commons License The de Haas van Alphen effect near a quantum critical end point in Sr3Ru2O7 A thesis presented by Jean-Fran¸cois Mercure to the University of St Andrews in application for the degree of Doctor of Philosophy September 2008 Declarations I, Jean-Fran¸cois Mercure, hereby certify that this thesis, which is approximately 42000 words in length, has been written by me, that it is the record of work carried out by me, and that it has not been submitted in any previous application for a higher degree. date signature of candidate I was admitted as a research student in October 2004 and as a candidate for the degree of Doctor of Philosophy in October 2004; the higher study for which this is a record was carried out in the University of St Andrews between 2004 and 2008. date signature of candidate I hereby certify that the candidate has fulfilled the conditions of the Resolution and Regulations appropriate for the degree of Doctor of Philosophy in the University of St Andrews and that the candidate is qualified to submit this thesis in application for that degree.
    [Show full text]
  • High-Resolution Photoemission on Sr2ruo4 Reveals Correlation-Enhanced Effective Spin-Orbit Coupling and Dominantly Local Self-Energies
    PHYSICAL REVIEW X 9, 021048 (2019) High-Resolution Photoemission on Sr2RuO4 Reveals Correlation-Enhanced Effective Spin-Orbit Coupling and Dominantly Local Self-Energies A. Tamai,1,* M. Zingl,2 E. Rozbicki,3 E. Cappelli,1 S. Riccò,1 A. de la Torre,1 S. McKeown Walker,1 F. Y. Bruno,1 † P. D. C. King,3 W. Meevasana,4 M. Shi,5 M. Radović,5 N. C. Plumb,5 A. S. Gibbs,3, A. P. Mackenzie,6,3 C. Berthod,1 H. U. R. Strand,2 M. Kim,7,8 A. Georges,9,2,8,1 and F. Baumberger1,5 1Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland 2Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA 3SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, United Kingdom 4School of Physics, Suranaree University of Technology and Synchrotron Light Research Institute, Nakhon Ratchasima, 30000, Thailand and Thailand Center of Excellence in Physics, CHE, Bangkok, 10400, Thailand 5Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland 6Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany 7Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA 8Centre de Physique Th´eorique, CNRS, Ecole Polytechnique, IP Paris, F-91128 Palaiseau, France 9Coll`ege de France, 11 place Marcelin Berthelot, 75005 Paris, France (Received 16 December 2018; revised manuscript received 27 March 2019; published 6 June 2019) We explore the interplay of electron-electron correlations and spin-orbit coupling in the model Fermi liquid Sr2RuO4 using laser-based angle-resolved photoemission spectroscopy.
    [Show full text]