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Current Topics in Solid State Physics www.pss-c.com current topics in solid state physics thickness of metal gate tG thickness of oxide L Quo Vadis Nanoelectronics? (D.K.Ferry, p. 17) With contributions from the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors .. 1610-1634, 1862-6351, phys. stat. sol. (c) , No. 1,1-412(2008) Contents phys. stat. sol. (с) 5, No. 1, 3-10 (2008) / DOI 10.1002/pssc.200760002 ©WILEY iTiterScietice® DISCOVER SOMETHING GREAT Full text on our homepage at www.pss-c.com Papers presented at the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors Tokyo, Japan, 23-27 July 2007 Guest Editors: Seigo Tarucha, Kazuhito Furuya, Kaz Hirakawa, Masahito Yamaguchi, and Akira Oiwa Page i Editorial Page и Preface Page 12-13 Conference Committees and Sponsors Beyond CMOS and novel nanodevices Page 17-22 D. K. Ferry (invited) Quo Vadis Nanoelectronics? Page 23-26 H. Nakamura and Y. Katayama Electrical modelling for carbon nanotubes Page 27-30 Z. Fahem, G. Csaba, С M. Erlen, P. Lugli, W. M. Weber, L. Geelhaar, and H. Riechert Analysis of the hysteretic behavior of silicon nanowire transistors Page 31 -34 S. Ishii, T. Okutsu, S. Ueda, and Y. Takano Transport properties of multi-walled carbon nanotubes grown by boron addition method Nonequilibrium carrier dynamics in semiconductors and ultrasmall devices Page 35-38 Fausto Rossi Quantum Fermi's golden rule for semiconductor nanodevices Page 39-42 Mohamed Mohamed, Pierre Martin, and Umberto Ravaioli 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels Page 43-46 K. Huet, С Chassat, D.-P. Nguyen, S. Galdin-Retailleau, A. Bournel, and P. Dollfus Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs Page 47-51 A. Martinez, K. Kalna, A. Svizhenko, M. P. Anantram, J. R. Barker, and A. Asenov Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach www.pss-c.com © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 4 Contents Page 52-55 Fabrizio Buscemi, Emiliano Cancellieri, Paolo Bordone, Andrea Bertoni, and Carlo Jacoboni Electron decoherence in a semiconductor due to electron-phonon scattering Page 56-60 Yangdong Zheng, Hiroshi Mizuta, and Shunri Oda Nonequilibrium transport properties for a three-site quantum wire model Page 61-65 Ihor Semenikhin, Victor Ryzhii, Ekaterina Vostrikova, and Andrej Ivanov Electrical excitation of shock and soliton-like waves in high-electron-mobility transistor structures Page 66-69 David Taj and Fausto Rossi Quantum non-locality in systems with open boundaries: From the Wigner-function formalism to non-homogeneous Markovian master equations Page 70-73 Mitsuhiko Igarashi, Kazuhito Furuya, and Yasuyuki Miyamoto Cutoff frequency characteristics of gate-controlled hot-electron transistors by Monte Carlo simulation Page 74-77 Helmy Fitriawan, Matsuto Ogawa, Satofumi Souma, and Tanroku Miyoshi Quantum electron transport modeling in uniaxially strained silicon channel of double-gate MOSFETs Page 78-81 S. L. Lu, T. Ushiyama, A. Tackeuchi, and S. Muto Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - effect of exciton and free carrier thermodynamic Page 82-85 I. Iniguez-de-la-Torre, T. Gonzalez, D. Pardo, and J. Mateos Monte Carlo analysis of memory effects in nano-scale rectifying diodes Page 86-89 S, С Brugger, V. Peikert, and A. Schenk Exact method to solve the Boltzmann equation to any order in the driving forces: Application to transport parameters Page 90-93 Z. Aksamija, H.-S. Hahm, and U. Ravaioli Emission and absorption of phonons in silicon Page 94-97 T. Gonzalez, I. Ihiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens, and А. Сарру Monte Carlo simulation of surface charge effects in T-branch nanojunctions Page 98-101 F. Carosella, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, and P. Dollfus Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon Page 102-106 Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-c.com Contents phys. stat. sol. (с) 5, No. 1 (2008) Page 107-110 M. Koyama, Т. Inoue, N. Amano, Т. Maemoto, S. Sasa, and M. Inoue Nonlinear electron transport properties and rectification effects in InAs/AIGaSb ballistic devices Page 111-114 K. Natori High-field transport in semiconductors by transmission formalism Page 115-118 S. Sasa, T. Hayafuji, M. Kawasaki, A. Nakashima, K. Koike, M. Yano, and M. Inoue High-field characteristics of ZnO and ZnO/ZnMgO heterostructures Page 119-122 E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, and M. J. Martin A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature Page 123-126 M. J. Martin, R. Rengel, E. Pascual, J. tusakowski, W. Knap, and T. Gonzalez Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: a Monte Carlo study Page 127-130 E. Cancellieri, M. Rosini, P. Bordone, and C. Jacoboni Roughness effect on electron transport through quantum wires Page 131-134 I. Baskin, В. M. Ashkinadze, E. Cohen, and L. N. Pfeiffer Dynamics of microwave-induced processes in photoexcited GaAs/AIGaAs heterostructures Page 135-138 J. S. Ayubi-Moak, R. Akis, M. Saraniti, D. K. Ferry, and S. M. Goodnick Hot electron effects in ultra-short gate length InAs/lnAlAs HEMTs Page 139-142 Fabrizio Buscemi, Paolo Bordone, and Andrea Bertoni Simulation of decoherence in 1D systems, a comparison between distinguishable- and indistinguishable-particle collisions Page 143-145 T. Ushiyama, T. Toizumi, Y. Nakazato, and A. Tackeuchi Energy relaxation time of hot carriers photoexcited in InGaN Page 146-149 S. Perez, J. Mateos, D. Pardo, and T. Gonzalez Excitation of millimeter-wave oscillations in InAIAs/lnGaAs heterostructures Page 150-153 D. Querlioz, J. Saint-Martin, V.-N. Do, A. Bournel, and P. Dollfus Wigner ensemble Monte-Carlo simulation of nano-MOSFETs in degen­ erate conditions Electron transport in quantum dots and nanostructures Page 154-157 Yasuhiro Utsumi, Dmitri S. Golubev, and Gerd Schön Full counting statistics for electron number in quantum dots Page 158-161 Andrea Bertoni, Juan I. Climente, Massimo Rontani, Guido Goldoni, and Ulrich Hohenester Few-particle electron dynamics in coupled quantum dots with phonon interaction www.pss-c.com © 2008 WILEY-VCH Verlag GmbH S Co. KGaA, Weinheim 6 Contents Page 162-165 Т. Kobayashi, S. Sasaki, Т. Fujisawa, Y. Tokura, and T. Akazaki Energy distribution of the ballistic hot electrons and holes emitted from a quantum point contact and probed by a quantum dot Page 166-169 G. Kiesslich, E. Scholl, F. Hohls, and R. J. Haug Coulomb-mediated electron bunching in tunneling through coupled quantum dots Page 170-173 Toshihiro Kubo, Yasuhiro Tokura, and Seigo Tarucha Coherent pseudo-spin resonance in a laterally coupled double quantum dot Page 174-177 S. Amaha, С Payette, J. A. Gupta, T. Hatano, K. Ono, T. Kodera, Y. Tokura, D. G. Austing, and S. Tarucha Two level mixing effects probed by resonant tunnelling through vertically coupled quantum dots Page 178-181 K. Shibata, С Buizert, A. Oiwa, K. Hirakawa, and S. Tarucha Electron transport through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes Page 182-185 M. Hashisaka, S. Nakamura, Y. Yamauchi, S. Kasai, K. Kobayashi, and T. Ono Development of a measurement system for quantum shot noise at low temperatures Superlattices and novel miniband transport Page 186-189 Lino Reggiani, Angelo Guida, and Marcello Rosini Electron transport in superlattices for interacting Wannier-Stark levels Page 190-193 A. A. Andronov, E. P. Dodin, Yu. N. Nozdrin, and D. I. Zinchenko Transport in narrow minigap superlattices with inter-Wannier-Stark level tunneling Page 194-197 E. Scholl, N. Majer, and G. Stegemann Extended time delayed feedback control of stochastic dynamics in a resonant tunneling diode Page 198-202 N. Mori, G. Allison, A. Patane, and L. Eaves Resonant tunneling through a dilute nitride quantum well Page 203-206 T. Hasegawa, K. Mizoguchi, and M. Nakayama Observation of the second-nearest-neighbor Bloch oscillation in a GaAs/AIAs superlattice Page 207-210 Johanne Hizanidis and Eckehard Scholl Control of noise-induced spatiotemporal patterns in superlattices Page 211-214 F. T. Vasko, A. Hernandez-Cabrera, and P. Aceituno Intersubband transitions in a biased superlattice: THz gain and surface mode О 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-c.com Contents им HHi phys. stat. sol. (с) 5, No. 1 (2008) 7 Intersubband transitions and terahertz phenomena Page 215-220 Andreas Wacker (invited) Coherence and spatial resolution of transport in quantum cascade lasers Page 221-224 С Jirauschek and P. Lugli Limiting factors for high temperature operation of THz quantum cascade lasers Page 225-228 Hyunyong Choi, Laurent Diehl, Marcella Giovannini, Jerome Faist, Federico Capasso, and Theodore B. Norris Femtosecond pump-probe studies of carrier transport and gain dynamics in quantum cascade lasers Page 229-231 C. V.-B. Tribuzy, S. Ohser, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, J. Neuhaus, T. Dekorsy, K. Biermann, and H. Künzel Inefficiency of intervalley transfer in narrow InGaAs/AIAsSb quantum wells Page 232-235 T. Kubis, С Yeh, and P. Vogl Quantum theory of transport and optical gain in quantum cascade lasers Page 236-239 P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, С Palermo, J. Torres, and L. Chusseau Generation of TeraHertz radiation assisted by optical phonons in nitride-based quantum wells and heterolayers Page 240-243 Y. M. Zhu, T. Unuma, K. Shibata, K. Hirakawa, Y. Ino, and M. Kuwata-Gonokami Carrier acceleration under very high fields in bulk GaAs investigated by time-domain terahertz spectroscopy Page 244-248 A.
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