Current Topics in Solid State Physics

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thickness of metal gate tG

thickness of oxide L

Quo Vadis Nanoelectronics? (D.K.Ferry, p. 17)

With contributions from the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

.. 1610-1634, 1862-6351, phys. stat. sol. (c) , No. 1,1-412(2008) Contents

phys. stat. sol. (с) 5, No. 1, 3-10 (2008) / DOI 10.1002/pssc.200760002

©WILEY iTiterScietice® DISCOVER SOMETHING GREAT Full text on our homepage at www.pss-c.com

Papers presented at the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors Tokyo, Japan, 23-27 July 2007 Guest Editors: Seigo Tarucha, Kazuhito Furuya, Kaz Hirakawa, Masahito Yamaguchi, and Akira Oiwa

Page i Editorial Page и Preface Page 12-13 Conference Committees and Sponsors

Beyond CMOS and novel nanodevices

Page 17-22 D. K. Ferry (invited) Quo Vadis Nanoelectronics?

Page 23-26 H. Nakamura and Y. Katayama Electrical modelling for carbon nanotubes

Page 27-30 Z. Fahem, G. Csaba, С M. Erlen, P. Lugli, W. M. Weber, L. Geelhaar, and H. Riechert Analysis of the hysteretic behavior of silicon nanowire transistors

Page 31 -34 S. Ishii, T. Okutsu, S. Ueda, and Y. Takano Transport properties of multi-walled carbon nanotubes grown by boron addition method

Nonequilibrium carrier dynamics in semiconductors and ultrasmall devices

Page 35-38 Fausto Rossi Quantum Fermi's golden rule for semiconductor nanodevices

Page 39-42 Mohamed Mohamed, Pierre Martin, and Umberto Ravaioli 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels

Page 43-46 K. Huet, С Chassat, D.-P. Nguyen, S. Galdin-Retailleau, A. Bournel, and P. Dollfus Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

Page 47-51 A. Martinez, K. Kalna, A. Svizhenko, M. P. Anantram, J. R. Barker, and A. Asenov Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach

Page 52-55 Fabrizio Buscemi, Emiliano Cancellieri, Paolo Bordone, Andrea Bertoni, and Carlo Jacoboni Electron decoherence in a semiconductor due to electron-phonon scattering Page 56-60 Yangdong Zheng, Hiroshi Mizuta, and Shunri Oda Nonequilibrium transport properties for a three-site quantum wire model Page 61-65 Ihor Semenikhin, Victor Ryzhii, Ekaterina Vostrikova, and Andrej Ivanov Electrical excitation of shock and soliton-like waves in high-electron-mobility transistor structures Page 66-69 David Taj and Fausto Rossi Quantum non-locality in systems with open boundaries: From the Wigner-function formalism to non-homogeneous Markovian master equations Page 70-73 Mitsuhiko Igarashi, Kazuhito Furuya, and Yasuyuki Miyamoto Cutoff frequency characteristics of gate-controlled hot-electron transistors by Monte Carlo simulation Page 74-77 Helmy Fitriawan, Matsuto Ogawa, Satofumi Souma, and Tanroku Miyoshi Quantum electron transport modeling in uniaxially strained silicon channel of double-gate MOSFETs Page 78-81 S. L. Lu, T. Ushiyama, A. Tackeuchi, and S. Muto Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - effect of exciton and free carrier thermodynamic Page 82-85 I. Iniguez-de-la-Torre, T. Gonzalez, D. Pardo, and J. Mateos Monte Carlo analysis of memory effects in nano-scale rectifying diodes Page 86-89 S, С Brugger, V. Peikert, and A. Schenk Exact method to solve the Boltzmann equation to any order in the driving forces: Application to transport parameters Page 90-93 Z. Aksamija, H.-S. Hahm, and U. Ravaioli Emission and absorption of phonons in silicon Page 94-97 T. Gonzalez, I. Ihiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens, and А. Сарру Monte Carlo simulation of surface charge effects in T-branch nanojunctions Page 98-101 F. Carosella, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, and P. Dollfus Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon Page 102-106 Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes

Page 107-110 M. Koyama, Т. Inoue, N. Amano, Т. Maemoto, S. Sasa, and M. Inoue Nonlinear electron transport properties and rectification effects in InAs/AIGaSb ballistic devices Page 111-114 K. Natori High-field transport in semiconductors by transmission formalism Page 115-118 S. Sasa, T. Hayafuji, M. Kawasaki, A. Nakashima, K. Koike, M. Yano, and M. Inoue High-field characteristics of ZnO and ZnO/ZnMgO heterostructures Page 119-122 E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, and M. J. Martin A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature Page 123-126 M. J. Martin, R. Rengel, E. Pascual, J. tusakowski, W. Knap, and T. Gonzalez Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: a Monte Carlo study Page 127-130 E. Cancellieri, M. Rosini, P. Bordone, and C. Jacoboni Roughness effect on electron transport through quantum wires Page 131-134 I. Baskin, В. M. Ashkinadze, E. Cohen, and L. N. Pfeiffer Dynamics of microwave-induced processes in photoexcited GaAs/AIGaAs heterostructures Page 135-138 J. S. Ayubi-Moak, R. Akis, M. Saraniti, D. K. Ferry, and S. M. Goodnick Hot electron effects in ultra-short gate length InAs/lnAlAs HEMTs Page 139-142 Fabrizio Buscemi, Paolo Bordone, and Andrea Bertoni Simulation of decoherence in 1D systems, a comparison between distinguishable- and indistinguishable-particle collisions Page 143-145 T. Ushiyama, T. Toizumi, Y. Nakazato, and A. Tackeuchi Energy relaxation time of hot carriers photoexcited in InGaN Page 146-149 S. Perez, J. Mateos, D. Pardo, and T. Gonzalez Excitation of millimeter-wave oscillations in InAIAs/lnGaAs heterostructures Page 150-153 D. Querlioz, J. Saint-Martin, V.-N. Do, A. Bournel, and P. Dollfus Wigner ensemble Monte-Carlo simulation of nano-MOSFETs in degen erate conditions

Electron transport in quantum dots and nanostructures

Page 154-157 Yasuhiro Utsumi, Dmitri S. Golubev, and Gerd Schön Full counting statistics for electron number in quantum dots Page 158-161 Andrea Bertoni, Juan I. Climente, Massimo Rontani, Guido Goldoni, and Ulrich Hohenester Few-particle electron dynamics in coupled quantum dots with phonon interaction

Page 162-165 Т. Kobayashi, S. Sasaki, Т. Fujisawa, Y. Tokura, and T. Akazaki Energy distribution of the ballistic hot electrons and holes emitted from a quantum point contact and probed by a quantum dot Page 166-169 G. Kiesslich, E. Scholl, F. Hohls, and R. J. Haug Coulomb-mediated electron bunching in tunneling through coupled quantum dots Page 170-173 Toshihiro Kubo, Yasuhiro Tokura, and Seigo Tarucha Coherent pseudo-spin resonance in a laterally coupled double quantum dot Page 174-177 S. Amaha, С Payette, J. A. Gupta, T. Hatano, K. Ono, T. Kodera, Y. Tokura, D. G. Austing, and S. Tarucha Two level mixing effects probed by resonant tunnelling through vertically coupled quantum dots Page 178-181 K. Shibata, С Buizert, A. Oiwa, K. Hirakawa, and S. Tarucha Electron transport through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes Page 182-185 M. Hashisaka, S. Nakamura, Y. Yamauchi, S. Kasai, K. Kobayashi, and T. Ono Development of a measurement system for quantum shot noise at low temperatures

Superlattices and novel miniband transport

Page 186-189 Lino Reggiani, Angelo Guida, and Marcello Rosini Electron transport in superlattices for interacting Wannier-Stark levels Page 190-193 A. A. Andronov, E. P. Dodin, Yu. N. Nozdrin, and D. I. Zinchenko Transport in narrow minigap superlattices with inter-Wannier-Stark level tunneling Page 194-197 E. Scholl, N. Majer, and G. Stegemann Extended time delayed feedback control of stochastic dynamics in a resonant tunneling diode Page 198-202 N. Mori, G. Allison, A. Patane, and L. Eaves Resonant tunneling through a dilute nitride quantum well Page 203-206 T. Hasegawa, K. Mizoguchi, and M. Nakayama Observation of the second-nearest-neighbor Bloch oscillation in a GaAs/AIAs superlattice Page 207-210 Johanne Hizanidis and Eckehard Scholl Control of noise-induced spatiotemporal patterns in superlattices Page 211-214 F. T. Vasko, A. Hernandez-Cabrera, and P. Aceituno Intersubband transitions in a biased superlattice: THz gain and surface mode

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Intersubband transitions and terahertz phenomena

Page 215-220 Andreas Wacker (invited) Coherence and spatial resolution of transport in quantum cascade lasers Page 221-224 С Jirauschek and P. Lugli Limiting factors for high temperature operation of THz quantum cascade lasers Page 225-228 Hyunyong Choi, Laurent Diehl, Marcella Giovannini, Jerome Faist, Federico Capasso, and Theodore B. Norris Femtosecond pump-probe studies of carrier transport and gain dynamics in quantum cascade lasers Page 229-231 C. V.-B. Tribuzy, S. Ohser, M. Priegnitz, S. Winnerl, H. Schneider, M. Helm, J. Neuhaus, T. Dekorsy, K. Biermann, and H. Künzel Inefficiency of intervalley transfer in narrow InGaAs/AIAsSb quantum wells Page 232-235 T. Kubis, С Yeh, and P. Vogl Quantum theory of transport and optical gain in quantum cascade lasers Page 236-239 P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, С Palermo, J. Torres, and L. Chusseau Generation of TeraHertz radiation assisted by optical phonons in nitride-based quantum wells and heterolayers Page 240-243 Y. M. Zhu, T. Unuma, K. Shibata, K. Hirakawa, Y. Ino, and M. Kuwata-Gonokami Carrier acceleration under very high fields in bulk GaAs investigated by time-domain terahertz spectroscopy Page 244-248 A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y. M. Meziani, T. Otsuji, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and А. Сарру Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation Page 249-252 J.-F. Millithaler, L. Varani, С Palermo, J. Pousset, W. Knap, J. Mateos, T. Gonzalez, S. Perez, D. Pardo, and L. Reggiani Monte Carlo simulation of plasma oscillations in ultra-thin layers Page 253-256 M. P. Hasselbeck, D. Seletskiy, L. R. Dawson, and M. Sheik-Bahae Direct observation of Landau damping in a solid state plasma Page 257-260 H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, С Palermo, L. Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert, and Y. Roelens Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors Page 261-264 Victor Ryzhii, Maxim Ryzhii, and Taiichi Otsuji Population inversion of photoexcited electrons and holes in graphene and its negative terahertz conductivity

Page 265-268 M. Miura and S. Katayama Analysis of hot electron effects on intersubband Raman laser in modulation-doped GaAs/AIGaAs coupled double quantum wells Page 269-271 P. N. Romanets, F. T. Vasko, and V. I. Ryzhii Transient negative cyclotron absorption due to partially-inverted distribution of photoexcited electrons Page 273-276 Fabrizio Castellano, Rita Claudia lotti, and Fausto Rossi Feasibility of sequential multiphoton absorption for terahertz radiation detection Page 277-281 Yabo Hu, Maxim Ryzhii, Ichiro Hagiwara, Michael S. Shur, and Victor Ryzhii Combined resonance and resonant detection of modulated terahertz radiation in a micromachined high-electron mobility transistor Page 282-285 Yahya Moubarak Meziani, Mitsuhiro Hanabe, Taiichi Otsuji, and Eiichi Sano Bolometric detection of terahertz radiation from new grating gates device Page 286-289 H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow Phonon scattering of hot electrons in intense mid-infrared laser fields

Semiconductor-based spin tronics

Page 290-293 T. Kubis and P. Vogl Microscopic theory of spin-filtering in non-magnetic semiconductor nanostructures Page 294-297 T. Miyawaki, M. Kohda, A. Fujita, and J. Nitta Local Hall measurement of magnetization reversal and magnetic interaction in Fe/Au/Fe trilayer rings Page 298-301 R. Kaji, H. Sasakura, S. Adachi, and S. Muto Excitation power dependence of optically pumped nuclear spin polarizations in single InAIAs QDs Page 302-305 Jonathan Baugh, Yosuke Kitamura, Keiji Ono, and Seigo Tarucha Dynamic nuclear polarization in a double quantum dot device: electrical induction and detection Page 306-309 T. Ota, G. Yusa, N. Kumada, S. Miyashita, T. Fujisawa, and Y. Hirayama Initialization and logic gate operations of nuclear spin qubits using a submicron scale resistively-detected NMR device Page 310-313 P. Kleinert and V. V. Bryksin Spin-Hall effect and spin coherent waves in semiconductors with Rashba spin-orbit interaction Page 314-317 Yutaka Takahashi, Nobuyuki Inaba, and Fumihiko Hirose Effect of electron-electron interaction on the diffusion current of spin-polarized electrons

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Page 318-321 I. Kanazawa The correlation effect of carrier-induced magnetic solitons in diluted magnetic semiconductors Page 322-325 Yoji Kunihashi, Takayuki Nihei, Makoto Kohda, and Junsaku Nitta

Rashba spin-orbit interaction of ln053Ga047As/ln07Ga03As/ln053Ga047As shallow two-dimensional electron gas by surface etching Page 326-329 S. L. Lu, T. Ushiyama, A. Tackeuchi, and S. Muto Carrier spin relaxation in undoped GaAs double quantum wells Page 330-333 A. M. Gilinsky, A. Winter, C. Mejfa-Garcia, H. Pascher, К. S. Zhuravlev, A. V. Efanov, and E. V. Kozhemyakina

Negative spin polarization in AIGaAs photoluminescence

Carrier dynamics in optical excitations and ultrafast optical phenomena Page 334-339 Salvatore Savasta, Omar Di Stefano, and Stefano Portolan {invited) Quantum optics in semiconductor microcavities Page 340-342 M. Betz, L Costa, M. Spasenovic, A. D. Bristow, and H. M. van Driel (invited) All-optical injection of ballistic electrical currents in unbiased silicon Page 343-346 Keishiro Goshima, Kazuhiro Komori, Takeyoshi Sugaya, and Toshihide Takagahara Cascade optical excitation of an artificial exciton molecule in a coupled quantum dot Page 347-350 Tilmann Kuhn, Doris Reiter, and Vollrath Martin Axt Coherent control of carrier capture and wave front dynamics in homogeneously excited quantum wire-dot systems Page 351-355 S. Adachi, H. Sasakura, N. Yatsu, R. Kaji, K. Yamada, S. Muto, H. Kumano, and I. Suemune Fourier spectroscopy of decoherence of exciton and their complexes in single InAlAs quantum dots Page 356-359 T. Fujita, T. Toizumi, Y. Nakazato, A. Tackeuchi, T. Chinone, J. H. Liang, and M. Kajikawa Competition between quantum-confined Stark effect and free-carrier screeninq effect in AIGaN/GaN multiple quantum wells Page 360-363 Atsushi Kanno, Redouane Katouf, Osamu Kojima, Junko Ishi-Hayase, Masahiro Tsuchiya, and Toshiro Isu Ultrafast optical Kerr effect of excitons weakly confined in GaAs thin films Page 364-366 Muneaki Hase Ultrafast dynamics of plasmon-phonon coupling: Estimation of electron mobility in GaAs Page 367-369 Eunhee Kim, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki Time-resolved spectroscopy in an undoped GaN (1-101)

10 Contents

Page 370-373 Philip Weetman and Marek S. Wartak Nonequilibrium carrier corrections to the optical gain in semiconductor quantum well structures Page 374-377 T. Ishikawa and M. Eto Theoretical study of optical excitation in quantum dots by circularly polarized light Page 378-381 K. Kusunoki, N. Tsukiji, T. Umi, A. Tackeuchi, and K. Yamaguchi Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots Page 382-385 G. Pistone, S. Savasta, 0. Di Stefano, G. Martino, R. Girlanda, and S. Portolan Near-field light emission from dark-states in semiconductor quantum dots

Novel materials and structures

Page 386-389 S. Ozcan, J. Smoliner, M. Andrews, G. Strasser, Т. Dienel, and T. Fritz Ballistic electron mean free path of titanylphthalocyanine films grown on GaAs Page 390-393 S. Schuster, G. Scarpa, L Latessa, and P. Lugli Charge transport in oligophenylenvinylene molecules Page 394-397 T. Yamanaka, M. Dutta, and M. A. Stroscio Simulation of the charge transport in DNA Page 398-401 A. Yu. Smirnov, L. G. Mourokh, and Franco Nori Resonant energy transfer in electron-driven proton pumps

Additional paper presented at International Symposium on Advanced Magnetic Materials (ISAMMA 2007) Jeju, Korea, 28 May-1 June 2007 Guest Editor: Sang Ho Lim

Magnetic theory and calculation Page 405-408 Dong Ho Kim, Tae-Jong Hwang, Kwang-Su Ryu, and Sung-Chul Shin Influence of easy magnetization axis orientation on magnetization reversal in permalloy strips Page 410-411 Information for authors

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