DOCSLIB.ORG

IJECET), and ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), Pp

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
IJECET), and ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), Pp InternationalINTERNATIONAL Journal of Electronics and JOURNALCommunication Engineering OF ELECTRONICS & Technology (IJECET), AND ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME COMMUNICATION ENGINEERING & TECHNOLOGY (IJECET) ISSN 0976 – 6464(Print) ISSN 0976 – 6472(Online) IJECET Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME: www.iaeme.com/ijecet.asp © I A E M E Journal Impact Factor (2014): 7.2836 (Calculated by GISI) www.jifactor.com A NEW CIRCUIT MODEL OF LOW VOLTAGE HIGH CURRENT GAIN CMOS COMPOUND PAIR AMPLIFIER Raj Kumar Tiwari, Gaya Prasad Department of Physics & Electronics Dr. R.M.L. Avadh University, Faizabad (U.P.), India ABSTRACT In the Present paper we have studied about a new circuit CMOS Compound pair Amplifier. Proposed new circuit model has been analysed and it is found that proposed circuit has very high current gain and good temperature stability for low voltage applications. CMOS Compound pair can be use as an audio as well as radio frequency tuned amplifier. It is investigated that voltage gain increases from 206.379 to 1740.50 with suitable load values. Gain variations with load resistance from 1K to 100K have been studied in present paper. Variation of input and output impedances have been also studied and it found that CMOS compound pair (Proposed Model) has high input impedance and low output impedance as compare to transistor Sziklai Pair. Key Words: Transistor Sziklai Pair, CMOS Compound Pair, Current Gain, Input and Output, Impedance, Temperature Stability. INTRODUCTION In modern time high bandwidth and gain is a challenging problem of small signal amplification in electronics. Literature surve shows existence of various types of amplifier in which Darlington pair is randomly used for various purposes due its few unique properties. Darlington pair was invented by Bell Laboratories Engineer Sidney Darlington in 1953[1]. It is seen that Darlington pair having large value of β is suitable for small signal and low frequency but not suitable for higher frequency applications [2, 3]. For ready reference value of β is given by equation (1) β= βQ1 * βQ2 + βQ1 + βQ2 (1) Where, symbols have their usual meaning. 65 International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME Sziklai pair was named after Hungarian born inventor, George Sziklai. If a compound pair is made with an NPN deriver and PNP output device, then the overall devices behave as NPN bipolar transistor. If a compound pair is made with a PNP deriver and NPN output device, then the overall devices behave as PNP bipolar transistor. Darlington Pair, Sziklai pair having super β value given by equation (2) and CMOS compound pair (proposed new model) is shown in fig.1(a), fig.1(b) and fig.1(c) respectively. β = βQ1 *βQ2 + βQ1 (2) CMOS PNP NPN PNP NPN Collector Collector Drain M3 Collector Collector NPN NMOS PNP Base Base Gate PNP M1 NPN M2 Base PNP PMOS NPN Base PNP PMOS NPN M4 NMOS Emitter Emitter Emitter Emitter Source Darlington Pair Sziklai Pair CMOS Compound Pair (a) (b) (C) Fig. 1: Basic Configuration of Devices; (a) and (b) reference devices and (c) proposed device Complementary metal–oxide–semiconductor (CMOS) uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions. Literature surve[4-18] shows that CMOS devices have high noise immunity and low static power consumption because CMOS devices do not produce as much waste heat as other forms of logic families, like transistor–transistor logic (TTL) or NMOS logic. So in present investigation we proposed a new CMOS compound pair model that works for low voltage and high speed application having high current gain with good temperature stability as compare to reference devices. EXPERIMENTAL CIRCUITS The reference transistor sziklai pair circuit shown in Fig.2 have been simulated having an a.c. input signal 1nVac, Ri=500 ohm, Ci=1µf, R1=47k, R2=5k, Re=2k, Ce=10µf, Co=10uf, Rl=10k, Rc=10k, Vd=5Vdc, and npn transistor Q1=2N2222 and Q2= 2N2904 is used as an active component to design the circuit. Proposed new CMOS circuit shown in the Fig.3 in which the active component transister Sziklai pair is replaced by CMOS compound pair and other passive components are same as taken in fig.2 for ready comperision. 66 International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME Fig. 2: Transistor Sziklai pair Circuit (Reference Circuit) Vd 5Vdc 2 2 R1 Rd 47k 10k 1 1 Co Ri Ci M3 10m 1 21 2 MbreakN 500 1uf M1 M2 MbreakP MbreakP V1 1nVac M4 0Vdc MbreakN 2 2 2 2 Rl R2 5k Rs Cs 10k 1 1 2k 1 10uf 1 Fig. 3: Proposed CMOS Compound pair Circuit RESULTS AND DISCUSSIONS Proposed amplifier circuit provides high current gain and wide bandwidth in comparison to reference circuit as shown in fig.4. Proposed new circuit model can be also used as a tuned amplifier for radio frequency application as shown in fig.5. Input Impedance for CMOS compound pair amplifier (proposed model) is found to be higher than transistor sziklai pair as shown in fig.6 fig.7 shows low output impedenceas compare to transistor Sziklai pair amplifier. Fig.8 shows good temperature stability. Present investigation for proposed model shows variation of the gain with load resistance and it is found that gain for proposed model varies from 206.374 to 1740.50 for typical load 1K to 100K respectively which is shown in table 1 for ready reference. Table2 shows variation of gain with respect to the capactancefor fixed load resistance Rl=10k. Analysis shows that for particular value of Co=10pf gain is found to be very high equal to 9606.0. 67 International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME Fig. 4: Current gain of transistor Sziklai pair(+ symbol) and CMOS compound pair(x symbol) Fig.5: Voltage gain of transistor Sziklai pair(+ symbol) and CMOS compound pair(x symbol) Fig.6: Input Impedance of transistor Sziklai pair(+ symbol) and CMOS compound pair(x symbol) 68 International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME Fig.7: Output Impedance of transistor Sziklai pair(+ symbol) and CMOS compound pair(x symbol) Fig.8: Temperature stable for - 5 to 10 range of CMOS Compound pair TABLES Table 1: Variation of gain with load resistance for capacitance 10uf for CMOS Compound Pair Value of Load Resistance Rl in kiloohm Voltage gain Av in mili 1 206.379 5 279.329 10 369.004 47 984.434 100 1740.50 Table 2: Variation of frequency response with output capacitor for fixed load resistance 10k for CMOS Compound Pair Value of 10 Hz 100 1Khz 10Khz 1 Mhz 1Ghz 1Thz 100Thz Co Hz 10p 314.0 2934.7 9606.0 9543.0 471.3 369.04 369.04 369.04 10n 316.6 4113.5 474.8 369.04 369.04 369.04 369.04 369.04 10u 85.5 340.11 368.6 369.04 369.04 369.04 369.04 369.04 10m 84.9 339.86 368.6 369.04 369.04 369.04 369.04 369.04 69 International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 4, April (2014), pp. 65-71 © IAEME CONCLUSION The proposed model can be used for various application due to its high current gain high input impedance and low output impedance and due to its good temperature stability in various analog and digital circuit for low voltage and high speed applications. REFERENCES [1] www. Wikipedia, the free encyclopedia. [2] Robert L. Boylested and Louis Nashelsky Electronic devices and circuit theory Prentice Hall is an imprint of Pearson, tenth edition p.p. 578-582 (2009). [3] Raj Kumar Tiwari and Jyotsna Mishra, “Simulation Study of High Frequency Small Signal Amplifier”, Ultra Scientist Vol.22(2), 419-424 (2010). [4] Nail H.E. Weste and Kamran Eshraghian, “Principles of CMOS VLSI Design A systems Perspective” Addison-Wesley Publishing Company. Reprint june1988, pp63-94. [5] Hassan O. Elwan and Ahmed M. Soliman, “Low-Voltage Low-Power CMOS Current Conveyors”, IEEE Transactions on Circuits and Systems—I: Fundamental Theory And Applications, Vol. 44, No. 9, September 1997 [6] Y.K. Seng, “New current conveyor for high-speed low-power current sensing”, IEE Procc. Circuits Devices Syst., Vol. 145, No. 2. April 1998, pp.85-89. [7] Christophe PrBmont, Stkphane Cattet, Richard Grisel, Nacer Abouchi, “A CMOS Multiplier/Divider based on Current Conveyors’, Proceedings of the IEEE International Symposium on Circuits and Systems, vol. 1, pp. 69-71, 1998. [8] Raj Kumar Tiwari, Anil Kumar Shukla and Ganga Ram Mishra, “Noise Analysis Of Class AB CMOS Current Conveyor”, Journal of Ultra Scientist of physical sciences, Vol. 23, No.1, 2011, pp. 155-161. [9] Raj Kumar Tiwari and Anil Kumar Shukla, “Gain Enhancement in Folded Cascode Op-Amp with Class AB Output Buffer”, International Journal of Electronics, Electrical and Communication Engineering, Vol.3, No.2, 2011, pp. 163-167. [10] Raj Kumar Tiwari and Anil Kumar Shukla, “Operational Amplifier Design with Rail-to-Rail Supply Voltage Output Having Reduced Power Dissipation” in International Journal of VLSI design, Vol.3, No.
Load more

Recommended publications
  • Development and Qualitative Analysis of a New Circuit Model of Two-Stage Small-Signal Sziklai Pair Amplifier
    International Journal of Computer Theory and Engineering, Vol. 5, No. 4, August 2013 Development and Qualitative Analysis of a New Circuit Model of Two-Stage Small-Signal Sziklai Pair Amplifier SachchidaNand Shukla and Susmrita Srivastava Darlington pairs when used in linear circuits. Another major Abstract—New circuit model of a two-stage small-signal advantage of Sziklai pair over Darlington pair is that its base Sziklai pair amplifier is proposed for the first time. The turn-on voltage is only half of the Darlington's turn-on proposed amplifier circuit, which is obtained by cascading a voltage [8], [9]. small-signal Sziklai pair amplifier (Stage-1) with triple-transistor based compound Sziklai amplifier (Stage-2), is analyzed on the qualitative scale. Performance of the proposed amplifier is compared with that of Stage-1 and Stage-2 II. EXPERIMENTAL CIRCUITS amplifier circuits to provide a wide spectrum to the qualitative Present paper crops a comparative study of small-signal studies. Proposed amplifier uses three additional biasing Sziklai pair amplifier (Fig. 1), Compound Sziklai amplifier resistances in its circuit configuration and crops high voltage gain (237.50), high current gain (339.98) with wider bandwidth (Fig. 2) and a two stage proposed amplifier (Fig. 3), obtained (2MHz) in 1-15mV range of AC input at 1 KHz. The proposed by cascading circuits of Fig. 1 and Fig. 2 with minor circuit successfully removes the poor response problem of modifications [10], [11]. conventional Darlington pair amplifiers at higher frequencies and narrow bandwidth problem of recently developed (by authors) circuit of small-signal Sziklai pair amplifier.
    [Show full text]
  • High Performance Audio Power Amplifiers
    High Performance Audio Power Amplifiers for music performance and reproduction Newnes An imprint of Butterworth-Heinemann Ltd Linacre House, Jordan Hill, Oxford OX2 8DP A division of Reed Educational and Professional Publishing Ltd OXFORD BOSTON JOHANNESBURG MELBOURNE NEW DELHI SINGAPORE First published 1996 Reprinted with revisions 1997 © Ben Duncan 1996 © B. D. 1997 All rights reserved. No part of this publication may be reproduced in any material form (including photocopying or storing in any medium by electronic means and whether or not transiently or incidentally to some other use of this publication) without the written permission of the copyright holder except in accordance with the provisions of the Copyright, Designs and Patents Act 1988 or under the terms of a licence issued by the Copyright Licensing Agency Ltd, 90 Tottenham Court Road, London, England W1P 9HE. Applications for the copyright holder's written permission to reproduce any part of this publication should be addressed to the publishers TRADEMARKS/REGISTERED TRADEMARKS Computer hardware and software brand names mentioned in this book are protected by their respective trademarks and are acknowledged. British Library Cataloguing in Publication Data A catalogue record for this book is available from the British Library ISBN 0 7506 2629 1 Typeset by P.K.McBride, Southampton Printed and bound in Great Britain High Performance Audio Power Amplifiers for music performance and reproduction Ben Duncan, A.M.I.O.A., A.M.A.E.S., M.C.C.S international consultant in live show, recording & domestic audio electronics and electro-acoustics. Foreword Ben Duncan is one of those rare individuals whose love and enthusiasm for a subject transcends all the usual limits on perception and progress.
    [Show full text]
  • A New Circuit Model of Small-Signal Sziklai Pair Amplifier
    International Journal of Applied Physics and Mathematics, Vol. 3, No. 4, July 2013 A New Circuit Model of Small-Signal Sziklai Pair Amplifier SachchidaNand Shukla and Susmrita Srivastava However, due to small amount of in-built negative Abstract—A new circuit model of RC coupled small-signal feedback, the current gain factor of Sziklai pair Sziklai pair amplifier is proposed and qualitatively analyzed for (βSzk=βQ1βQ2+βQ1) is slightly less than Darlington pair the first time. The circuit of proposed amplifier uses a Sziklai (β =β β +β +β ) topology but at higher values of β pair with NPN driver and crops high voltage gain (237.916), Dar Q1 Q2 Q1 Q2 (normally for β>100) both are approximated to β≈β β [1], moderate bandwidth (15.10KHz), fairly high current gain Q1 Q2 (712.075) and considerably low THD (0.73%) at 1mV, 1KHz [4], [7]. These paired units of vital importance are often input AC signal. This circuit can be tuned in specific audible compared due to almost identical ranges of current gain, frequency range, extending approximately from 1Hz to 20KHz. input resistance, output resistance and voltage gain but Tuning performance makes this amplifier circuit suitable to use possess several disparities in appearance and qualitative in Radio and TV receiver stages. The qualitative and tuning features [1], [4], [7], [8]. For example, Sziklai pairs hold performance of the proposed amplifier offers it a flexible better linearity than Darlington pairs when used in linear application range as high voltage gain, high power gain and tuned amplifier. Tuning performance, variation of voltage gain circuits [4], [7].
    [Show full text]
  • A Novel Circuit Model of Small-Signal Amplifier Developed by Using BJT-JFET-BJT in Triple Darlington Configuration
    ISSN: 2278 - 8875 International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering Vol. 1, Issue 5, November 2012 A Novel Circuit Model of Small-Signal Amplifier Developed by Using BJT-JFET-BJT in Triple Darlington Configuration SachchidaNand Shukla1 and Susmrita Srivastava2 1Associate Professor, 2Research Scholar, Department of Physics and Electronics, Dr. Ram Manohar Lohia Avadh University, Faizabad - 224001, U.P., India. E-mail: [email protected] Abstract: Two distinct configurations of small-signal amplifiers, consisting hybrid combination of BJT-FET-BJT in Triple Darlington topology, are proposed and qualitatively analyzed perhaps for the first time. The first proposed amplifier crops high voltage with moderate current gain and bandwidth in 1-15mV input signal range at 1 KHz frequency. However, the second amplifier is configured by creating certain modifications in the first circuit. This amplifier produces about double voltage and current gain than the first amplifier circuit with almost half bandwidth in 1-4mV input-signal-range at 1 KHz frequency. Both the amplifier circuits include two additional biasing resistances. Variations in voltage gain as a function of frequency and different biasing resistances, temperature dependency of performance parameters, bandwidth and total harmonic distortion of the amplifiers are also perused. The proposed amplifiers can be successfully implemented as high power gain small-signal amplifiers in audio-frequency-range because of the obtained values of the current and voltage gains which are higher than unity. Key words: Small-signal amplifiers, Darlington amplifiers, Common Source JFET amplifiers I. INTRODUCTION One of the important concepts in electronics is the process of amplification through Darlington pair which is considered to be a prominent configuration due to its wide range of application [1]-[5].
    [Show full text]
  • Multi-Transistor Amplifiers
    Modular Electronics Learning (ModEL) project * SPICE ckt v1 1 0 dc 12 v2 2 1 dc 15 r1 2 3 4700 r2 3 0 7100 .dc v1 12 12 1 .print dc v(2,3) .print dc i(v2) .end V = I R Multi-Transistor Amplifiers c 2020-2021 by Tony R. Kuphaldt – under the terms and conditions of the Creative Commons Attribution 4.0 International Public License Last update = 28 September 2021 This is a copyrighted work, but licensed under the Creative Commons Attribution 4.0 International Public License. A copy of this license is found in the last Appendix of this document. Alternatively, you may visit http://creativecommons.org/licenses/by/4.0/ or send a letter to Creative Commons: 171 Second Street, Suite 300, San Francisco, California, 94105, USA. The terms and conditions of this license allow for free copying, distribution, and/or modification of all licensed works by the general public. ii Contents 1 Introduction 3 2 Tutorial 5 2.1 Amplifier gain comparisons ................................ 6 2.2 Paired transistors ...................................... 7 2.3 Cascaded stages ....................................... 10 2.4 Push-pull amplifiers .................................... 14 2.5 Differential pairs ...................................... 19 2.6 Current mirrors ....................................... 22 2.7 Active loading ........................................ 25 3 Animations 29 3.1 Animation of class-B crossover distortion ........................ 30 4 Questions 51 4.1 Conceptual reasoning .................................... 55 4.1.1 Reading outline and reflections .......................... 56 4.1.2 Foundational concepts ............................... 57 4.1.3 Discrete analysis of a bipolar AND gate ..................... 59 4.1.4 Discrete analysis of a bipolar OR gate ...................... 61 4.1.5 Model 324 differential amplifier qualitative analysis ..............
    [Show full text]
  • Cascode Summary • Cascaded Amplifier Design • Amplifier Biasing • Other Amplifier Configurations • Digital Circuit Design
    EE 330 Lecture 36 • Cascode Summary • Cascaded Amplifier Design • Amplifier Biasing • Other Amplifier Configurations • Digital Circuit Design Review from Last Lecture The Cascode Amplifier (consider npn BJT version) VCC IB VOUT Q2 VXX Q1 VIN VSS • Actually a cascade of a CE stage followed by a CB stage but usually viewed as a “single-stage” structure • Cascode structure is widely used Review from Last Lecture Cascode current sources IX IX Q2 M2 VXX VXX IX VYY VYY M1 Q1 VSS VSS VSS g0CC VCC VCC VDD Q1 VYY IX M1 VYY VXX Q2 M2 VXX All have the same small-signal model I IX X g02 g 01 +gπ2 g=0CC g01 +g 02 +gπ2 +g m2 Current Source Summary (BJT) Basic Cascode IX IX VCC VCC V YY Q1 Q1 Q2 VYY Q1 VYY VXX VSS I X VYY VXX Q2 Q1 VSS IX g01 g01/b g01 gg0 01 g 0CC β Current Source Summary (MOS) Basic Cascode IX VDD IX M2 V VXX V DD YY VYY M1 M1 V YY M 1 V VYY M1 ZZ VSS M2 IX VSS IX g0 g0 gg 0 01 g02 gg0 01 gm2 High Gain Amplifier Comparisons ( n-ch MOS) VCC VDD VCC IB VDD VOUT IB VDD VZZ VOUT M2 V M4 M1 YY VZZ VIN M3 VOUT M2 VXX VZZ M VSS 1 M3 VIN VOUT V M1 SS M2 VOUT gm1 VIN A-V VXX g 01 M2 VXX 1 gm1 VSS A- M1 V V 2g01 IN M1 VIN ggm1 m2 VSS A-VCC gg01 02 VSS gm1 A-VCC g01 1 ggm1 m2 A-VCC 2 g01 g 02 High Gain Amplifier Comparisons (BJT) VDD VCC VCC IB V IB OUT VYY VOUT VIN Q1 VOUT V Q1 IN VCC V EE Q2 Q V VXX VYY 3 CC V -g EE VOUT Q m VZZ 3 AV g Q2 0 VXX 1 g VYY Q4 m1 Q1 A VOUT V V 2gIN Q1 01 gm1 VIN Q2 AV β VXX g 01 VSS VSS Q1 g VIN A m1 V V g01 SS gm1 β A=V g201 The Cascode Amplifier • Operational amplifiers often built with basic cascode
    [Show full text]
  • ELTR 125 (Semiconductors 2), Section 2 Recommended Schedule Day 1 Topics: Load Lines and Amplifier Bias Calculations Questions
    ELTR 125 (Semiconductors 2), section 2 Recommended schedule Day 1 Topics: Load lines and amplifier bias calculations Questions: 1 through 15 Lab Exercise: Common-drain amplifier circuit (question 61) Day 2 Topics: FET amplifier configurations Questions: 16 through 25 Lab Exercise: Common-source amplifier circuit (question 62) Day 3 Topics: Push-pull amplifier circuits Questions: 26 through 35 Lab Exercise: Audio intercom circuit, push-pull output (question 63) Day 4 Topics: Multi-stage and high-frequency amplifier designs Questions: 36 through 50 Lab Exercise: Audio intercom circuit, push-pull output (question 63, continued) Day 5 Topics: Amplifier troubleshooting Questions: 51 through 60 Lab Exercise: Troubleshooting practice (oscillator/amplifier circuit – question 64) Day 6 Exam 2: includes Amplifier circuit performance assessment Lab Exercise: Troubleshooting practice (oscillator/amplifier circuit – question 64) General concept practice and challenge problems Questions: 67 through the end of the worksheet Impending deadlines Troubleshooting assessment (oscillator/amplifier) due at end of ELTR125, Section 3 Question 65: Troubleshooting log Question 66: Sample troubleshooting assessment grading criteria 1 ELTR 125 (Semiconductors 2), section 2 Skill standards addressed by this course section EIA Raising the Standard; Electronics Technician Skills for Today and Tomorrow, June 1994 D Technical Skills – Discrete Solid-State Devices D.12 Understand principles and operations of single stage amplifiers. D.13 Fabricate and demonstrate single stage amplifiers. D.14 Troubleshoot and repair single stage amplifiers. E Technical Skills – Analog Circuits E.01 Understand principles and operations of multistage amplifiers. E.02 Fabricate and demonstrate multistage amplifiers. E.03 Troubleshoot and repair multistage amplifiers. E.14 Fabricate and demonstrate audio power amplifiers.
    [Show full text]
  • BJT Amplifiers 6
    BJT AMPLIFIERS 6 CHAPTER OUTLINE VISIT THE WEBSITE 6–1 Amplifier Operation Study aids, Multisim, and LT Spice files for this chapter are 6–2 Transistor AC Models available at https://www.pearsonhighered.com 6–3 The Common-Emitter Amplifier /careersresources/ 6–4 The Common-Collector Amplifier 6–5 The Common-Base Amplifier IntroDUCTION 6–6 Multistage Amplifiers The things you learned about biasing a transistor in Chapter 5 6–7 The Differential Amplifier are now applied in this chapter where bipolar junction tran- 6–8 Troubleshooting sistor (BJT) circuits are used as small-signal amplifiers. The term small-signal refers to the use of signals that take up Device Application a relatively small percentage of an amplifier’s operational range. Additionally, you will learn how to reduce an ampli- CHAPTER OBJECTIVES fier to an equivalent dc and ac circuit for easier analysis, and you will learn about multistage amplifiers. The differential ◆◆ Describe amplifier operation amplifier is also covered. ◆◆ Discuss transistor models ◆◆ Describe and analyze the operation of common-emitter DEVICE Application PREVIEW amplifiers The Device Application in this chapter involves a preampli- ◆◆ Describe and analyze the operation of common-collector amplifiers fier circuit for a public address system. The complete system includes the preamplifier, a power amplifier, and a dc power ◆◆ Describe and analyze the operation of common-base supply. You will focus on the preamplifier in this chapter amplifiers and then on the power amplifier in Chapter 7. ◆◆ Describe
    [Show full text]
  • 3. Transistors S
    Notes for the course \Laboratoires avanc´esd'´electronique" 3. Transistors S. Orsi, Universit´ede Gen`eve, October 2009 1 The Transistors The name transistor comes from the phrase \transferring an electrical signal across a resistor". Transistors are four-terminal semiconductor devices commonly used to amplify or switch electronic signals. Often one terminal is not used, therefore we will refer to tran- sistors as 3-terminal devices. They are active devices that can amplify an input signal, i.e. produce an output signal with more power in it than the input signal. The transis- tor is the fundamental building block of modern electronic devices, and is used in radio, telephone, computer and other electronic systems. The transistor is often cited as being one of the greatest achievements in the 20th century, and some consider it one of the most important technological breakthroughs ever in human history. Most transistors are found in integrated circuits, but in our course we will work with individually packaged transistors. In particular, we will use two types of transistors: • The Bipolar Junction Transistor (BJT) is a current controlled valve. The 3 terminals are named base, collector and emitter. The current flowing through the base (IB) controls the current through the collector (IC ). • The Field Effect Transistor (FET) is a voltage controlled valve. The 3 terminals are named gate, drain and source. The gate-source voltage (VGS) controls the drain current (ID). Figure 1 shows the schematic drawing of a BJT transistor (left) and of a JFET (a particular type of FET transistor, section 5; right). Both transistors shown are of npn type.
    [Show full text]
  • Small-Signal Amplifiers with BJT, FET and MOSFET in Triple Darlington Topology
    International Journal of Engineering and Advanced Technology (IJEAT) ISSN: 2249 – 8958, Volume-4 Issue-1, October 2014 Small-Signal Amplifiers with BJT, FET and MOSFET in Triple Darlington Topology Sachchida Nand Shukla, Naresh Kumar Chaudhary Abstract — Circuit models of two discretely developed small-signal At higher frequencies their responses become poorer than that amplifiers are proposed and qualitatively analyzed perhaps for the of a single transistor amplifier [3]-[7]. To overcome this first time. Design of first amplifier uses Triple Darlington problem, a number of modifications are attempted in topology based hybrid unit of BJT-JFET-MOSFET in RC Darlington pair amplifiers. These modifications include coupled voltage divided biasing network with two additional biasing resistances. However the second amplifier uses addition of extra biasing resistances in respective amplifier, JFET-BJT-MOSFET hybrid unit in the similar circuit design. use of identical active devices in Triple Darlington topology Both the amplifiers successfully amplify small-signals swinging in and replacement of BJTs of the (Darlington) pair with other 1-10mV range at 1KHz frequency. These circuits simultaneously active devices like JFETs or MOSFETs [5],[7]-[10]. produce high voltage gain ( ≈ 291 and 345 respectively) and However use of dissimilar active devices or hybrid current gain ( ≈ 719 and 27K respectively) in narrow bandwidth combination of unlike active devices in Darlington’s topology region ( ≈ 8KHz and 13KHz respectively). Variations of maximum is still a challenging area for electronic circuit designers to voltage gain with different biasing resistances and DC supply work with [8],[11],[12]. In the present manuscript, authors voltage, temperature sensitivity of performance parameters, THDs, small-signal AC equivalent circuit analysis and noise proposed two circuit models of small-signal amplifiers using performance of the circuits are elaborately studied and discussed.
    [Show full text]
  • Dr. Ahmed Heikal – Lecture 2
    Electronic Devices Ninth Edition Floyd Chapter 6 Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Summary AC Quantities V AC quantities are indicated with a italic subscript; rms rms avg values are assumed unless Vce V Vce otherwise stated. ce VCE Vce The figure shows an example of vce a specific waveform for the collector-emitter voltage. Notice the DC component is VCE and 0 t 0 the ac component is Vce. Resistance is also identified with a lower case subscript when analyzed from an ac standpoint. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Summary Linear Amplifier A linear amplifier produces an replica of the input signal at the output. +VCC Ic Vb ICQ V BQ R1 RC Vce C2 VCEQ Rs C1 Ib IBQ Vs R2 RE RL For the amplifier shown, notice that the voltage waveform is inverted between the input and output but has the same shape. Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Summary AC Load Line Operation of the linear amplifier can be illustrated IC Q I B using an ac load line. b I The ac load line is different Ic I than the dc load line because CQ Q a capacitor looks open to dc but effectively acts as a short to ac. Thus the 0 VCE collector resistor appears to Vce be in parallel with the load VCEQ resistor. Electronic Devices, 9th edition © 2012 Pearson Education.
    [Show full text]
  • PDF Download Fundamentals of Tunnel Field-Effect Transistors 1St
    FUNDAMENTALS OF TUNNEL FIELD-EFFECT TRANSISTORS 1ST EDITION PDF, EPUB, EBOOK Sneh Saurabh | 9781498767163 | | | | | Fundamentals of Tunnel Field-Effect Transistors 1st edition PDF Book Electron Devices 60 , 92—96 Save my name, email, and website in this browser for the next time I comment. In the last 15 years there have been extensive investigations on Tunnel FET devices for ultra-low power and high-performance operation. Leave a Reply Cancel Reply Your email address will not be published. For a given transistor speed and a maximum acceptable subthreshold leakage, the subthreshold slope thus defines a certain minimal threshold voltage. JFET or junction field effect transistors are unipolar transistors because the current flow is due to single carrier type. Chattopadhyay, A. IEEE Trans. Nature , 91 AEU Int. Immediate online access to all issues from Schottkey NPN Transistor. The main advantage of this Sziklai pair is that it switch on with 0. However, they all suffer from extremely low ON currents, which is attributed to limited tunnel area available. Step by Step Procedure with Solved Example. Close Log In. Why Tunnel FETs? Open The Book. The minimum gate lengths are still around 20 — 24nm. For example, the amplification factor of signal at gate 1 can be controlled by varying the signal at gate 2 thus providing automatic control for signal of various magnitude. Leave a Reply Cancel Reply Your email address will not be published. Madan, J. Rent this article via DeepDyve. At this point, increasing the voltage causes to decrease the current. Bai, P. This is a type of BJT specially designed to operate in the avalanche breakdown region where the phenomenon of negative differential resistance occurs.
    [Show full text]