TAIRUS HYDROTHERMAL SYNTHETIC SAPPHIRES DOPED with NICKEL and CHROMIUM by Victor G
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Conventional and Microwave Hydrothermal Synthesis and Application of Functional Materials: a Review
materials Review Conventional and Microwave Hydrothermal Synthesis and Application of Functional Materials: A Review Guijun Yang and Soo-Jin Park * Department of Chemistry, Inha University, 100 Inharo, Incheon 402-751, Korea; [email protected] * Correspondence: [email protected]; Tel.: +82-32-876-7234 Received: 5 March 2019; Accepted: 9 April 2019; Published: 11 April 2019 Abstract: With the continuous development and progress of materials science, increasingly more attention has been paid to the new technology of powder synthesis and material preparation. The hydrothermal method is a promising liquid phase preparation technology that has developed rapidly during recent years. It is widely used in many fields, such as the piezoelectric, ferroelectric, ceramic powder, and oxide film fields. The hydrothermal method has resulted in many new methods during the long-term research process, such as adding other force fields to the hydrothermal condition reaction system. These force fields mainly include direct current, electric, magnetic (autoclaves composed of non-ferroelectric materials), and microwave fields. Among them, the microwave hydrothermal method, as an extension of the hydrothermal reaction, cleverly uses the microwave temperature to compensate for the lack of temperature in the hydrothermal method, allowing better practical application. This paper reviews the development of the hydrothermal and microwave hydrothermal methods, introduces their reaction mechanisms, and focuses on the practical application of the two methods. Keywords: hydrothermal method; microwave hydrothermal method; functional materials; application 1. Introduction During the process of continuous development of materials science, the research and development of new processes for material preparation and synthesis has always been an important part. For a long time, researchers have been searching for a material synthesis method with limited pollution, easy operation, excellent product performance, and low production cost [1–3]. -
Sapphire: Properties, Growth, and Applications
Sapphire: Properties, Growth, and 1904), which is sometimes called the flame fusion method. In this technique, alumina powder to be Applications crystallized is fused in a hydrogen–oxygen flame and falls on the molten upper surface of an oriented seed Sapphire has a high refractive index and a broad crystal placed in a furnace (Fig. 1(a)). transmission band spanning the UV, visible, and IR Since this is not a refined process, the material can bands. Sapphire also has a high hardness and melting contain voids and powder inclusions and is likely to be point, and very good thermal conductivity, tensile strained. However, crystals of up to 60mm in diameter strength, and thermal shock resistance (Table 1). The can be grown by this method. Figure 2 shows typical favorable combination of excellent optical and mech- sapphire boules grown by the Verneuil technique. anical properties of sapphire, together with high chemical durability, makes it an attractive structural material for high-technology applications. Sapphire crystals are used in medicine and blood chemistry as 1.2 Czochralski Growth they are resistant to human blood and body fluids, and are totally impervious to moisture and chemically This technique originates from pioneering work by inert. Frequently it is the combination of two, or more, Czochralski (1917). Crystals grow from the meniscus of its properties that make sapphire the only material formed on a free surface of the melt onto the seed available to solve complex engineering design crystal of the required crystallographic orientation. problems. The pull rod is lifted and rotated, and crystallization However, sapphire is difficult to shape owing to its onto the end of the seed occurs (Fig. -
The 3 Hours-Hydrothermal Synthesis of High Surface Area Superparamagnetic Fe3o4 Core-Shell Nanoparticles (Esty Octiana Sari)
The 3 Hours-Hydrothermal Synthesis of High Surface Area Superparamagnetic Fe3O4 Core-Shell Nanoparticles (Esty Octiana Sari) THE 3 HOURS-HYDROTHERMAL SYNTHESIS OF HIGH SURFACE AREA SUPERPARAMAGNETIC Fe3O4 CORE-SHELL NANOPARTICLES Esty Octiana Sari,Ahmad Fadli andAmunAmri Department of Chemical Engineering Riau University Jl. HR Subrantas KM 12,5 Panam, Pekanbaru 28293, Riau E-mail: [email protected] Received: 2 May 2017 Revised: 27 September 2017 Accepted: 4 October 2017 ABSTRACT THE 3 HOURS-HYDROTHERMAL SYNTHESIS OF HIGH SURFACE AREA SUPERPARAMAGNETIC Fe3O4 CORE-SHELL NANOPARTICLES. The monodisperse core-shell Fe3O4 nanoparticles have been successfully synthesized by short times (3 hours) hydrothermal method at 220 oC from FeCl3, citrate, urea and PEG.The as-synthesized samples have been characterized using X-Ray Diffraction (XRD), Transmission Electron Microscope (TEM), Bruneur-Emmet-Teller (BET) surface area analyzer, and Vibrating Sample Magnetometer (VSM). The XRD result shows the as-synthesized products are pure Fe3O4. The TEM image shows the magnetite nanoparticles have monodisperse core-shell shape. The BET result shows the magnetite nanoparticles have 650.757 m2/g surface area. The hysteresis curve shows the magnetite nanoparticles exhibit super paramagnetic properties. This simple method obtained 60 nm core-shell Fe3O4 particles with super paramagnetic, high surface area as well as hydrophilic properties. Those properties are promising for various biomedical application. The advantages of simple and short times methods with high quality of product make this method very promising to be applied. Keywords: Core-shell, Hydrothermal method, Superparamagnetic, Nanoparticles ABSTRAK 3 JAM-SINTETIS HIDROTERMALNANOPARTIKELCORE-SHELLSUPERPARAMAGNETIK Fe3O4 DENGAN LUAS PERMUKAAN TINGGI. Nanopartikel monodispersi Fe3O4 berbentuk core-shell o telah berhasil disintesis dengan metode hidrothermal waktu singkat (3 jam) pada suhu 220 C dari FeCl3, sitrat, urea dan PEG. -
Crystal Growth and Defects
Hartmut S. Leipner, Reinhard Krause-Rehberg Structure of imperfect solids (2) A. Advanced topics B. Methods Syllabus 1–2. Defects and crystal growth 3–4. Defects and semiconductor technology 5–7.* Defect engineering; diffusion 8. Optical methods 9. * Electrical methods 10. * Positron annihilation 11. * Resonance techniques 12. X-ray methods 13. * Probe techniques (* given by Reinhard Krause-Rehberg) 2 Summary As the continuation of the introduction into crystal defects (in the SS 2001), advanced topics of solid state physics related to defects are treated in this semester. Topics are the crystal growth from the point of view of crystal imperfections, diffusion in solids, and the role of defects in the production and the function of solid state devices. In the second part of this lecture, basic experimental techniques of the investigation of defects are introduced. The following methods are treated: optical and electrical methods (luminescence, Hall effect, DLTS), X-ray techniques, probe and resonance techniques (positron annihilation, pertubed angular correlation, electron paramagnetic resonance). The pieces of information to be extracted from the particular methods for the characterization of the defect structure are discussed. 3 Literature K.-T. Wilke: Kristallzüchtung. Berlin: Deutscher Verlag der Wissenschaften 1988. Silicon devices. Ed. K. A. Jackson. Weinheim: Wiley-VCH 1998. Bergmann Schäfer Lehrbuch der Experimentalphysik. Band 6 Festkörper. Hrg. W. Raith. Berlin: De Gruyter 1992. B. G. Jacobi, D. B. Holt: Cathodoluminescence microscopy of inorganic solids. New York: Plenum 1990. S. Pfüller: Halbleitermeßtechnik. Berlin: Verlag Technik 1976. G. Schatz, A. Weidinger: Nukleare Festkörperphysik. Stuttgart: Teubner 1992. Identification of defects in semiconductors. Ed. M. Stavola. San Diego: Academic Press 1998 Hartmut S. -
Development Team
Material science Paper No. : Crystallography & crystal growth Module : Growth from melt II Development Team Prof. Vinay Gupta, Department of Physics and Astrophysics, Principal Investigator University of Delhi, Delhi Prof. P. N. Kotru ,Department of Physics, University of Jammu, Paper Coordinator Jammu-180006 Content Writer Prof. P. N. Kotru ,Department of Physics, University of Jammu, Jammu-180006 Prof Mahavir Singh Department of Physics, Himachal Pradesh Content Reviewer University, Shimla 1 Crystallography & crystal growth Material science Growth from melt II Description of Module Subject Name Physics Paper Name Crystallography & crystal growth Module Name/Title Growth from melt II Module Id 31 2 Crystallography & crystal growth Material science Growth from melt II 31 Bridgman-Stockbarger Growth Technique. 31.1 Introduction The techniques were originated by Bridgman (1925) and Stockbarger (1938) and so are named after them. In these techniques a crucible containing the material to be grown is lowered through a furnace in such a way that the lowest point in the crucible and the solidification surface rises slowly up the crucible. It means that the melt contained in the crucible is progressively frozen to yield a single crystal. The rate of lowering the crucible may range from about 0.1 to 200 mmh─1 but in most of the cases it may range somewhere in between 1-30 mmh─1. There are situations where the movement of the crucible is reversed. In other words, the crucible is raised up through the furnace and so is advantageously applicable for materials which are volatile; the interface with the vapour being the coolest part of the charge. -
CHAPTER 8: Diffusion
1 Chapter 8 CHAPTER 8: Diffusion Diffusion and ion implantation are the two key processes to introduce a controlled amount of dopants into semiconductors and to alter the conductivity type. Figure 8.1 compares these two techniques and the resulting dopant profiles. In the diffusion process, the dopant atoms are introduced from the gas phase of by using doped-oxide sources. The doping concentration decreases monotonically from the surface, and the in-depth distribution of the dopant is determined mainly by the temperature and diffusion time. Figure 8.1b reveals the ion implantation process, which will be discussed in Chapter 9. Generally speaking, diffusion and ion implantation complement each other. For instance, diffusion is used to form a deep junction, such as an n-tub in a CMOS device, while ion implantation is utilized to form a shallow junction, like a source / drain junction of a MOSFET. Boron is the most common p-type impurity in silicon, whereas arsenic and phosphorus are used extensively as n-type dopants. These three elements are highly soluble in silicon with solubilities exceeding 5 x 1020 atoms / cm3 in the diffusion temperature range (between 800oC and 1200oC). These dopants can be introduced via several means, including solid sources (BN for B, As2O3 for As, and P2O5 for P), liquid sources (BBr3, AsCl3, and POCl3), and gaseous sources (B2H6, AsH3, and PH3). Usually, the gaseous source is transported to the semiconductor surface by an inert gas (e.g. N2) and is then reduced at the surface. 2 Chapter 8 Figure 8.1: Comparison of (a) diffusion and (b) ion implantation for the selective introduction of dopants into a semiconductor substrate. -
Contactless, Nondestructive Determination of Dopant Profiles Of
www.nature.com/scientificreports OPEN Contactless, nondestructive determination of dopant profles of localized boron-difused regions in Received: 11 November 2018 Accepted: 9 July 2019 silicon wafers at room temperature Published: xx xx xxxx Hieu T. Nguyen , Zhuofeng Li, Young-Joon Han , Rabin Basnet, Mike Tebyetekerwa , Thien N. Truong , Huiting Wu, Di Yan & Daniel Macdonald We develop a photoluminescence-based technique to determine dopant profles of localized boron- difused regions in silicon wafers and solar cell precursors employing two excitation wavelengths. The technique utilizes a strong dependence of room-temperature photoluminescence spectra on dopant profles of difused layers, courtesy of bandgap narrowing efects in heavily-doped silicon, and diferent penetration depths of the two excitation wavelengths in silicon. It is fast, contactless, and nondestructive. The measurements are performed at room temperature with micron-scale spatial resolution. We apply the technique to reconstruct dopant profles of a large-area (1 cm × 1 cm) boron-difused sample and heavily-doped regions (30 μm in diameter) of passivated-emitter rear localized-difused solar cell precursors. The reconstructed profles are confrmed with the well- established electrochemical capacitance voltage technique. The developed technique could be useful for determining boron dopant profles in small doped features employed in both photovoltaic and microelectronic applications. An attractive approach for improving light-to-electricity power conversion efciencies of crystalline silicon (c-Si) solar cells is to minimize surface areas of heavily-doped layers. Tis is due to the high recombination-active nature of the heavily-doped layers, causing a signifcant loss of photo-induced electrons and holes. Several solar cell designs employing this concept have been proved to achieve efciencies over 24% such as interdigitated back-contact (IBC)1–3 and passivated-emitter rear localized-difused (PERL)4–6 cell structures. -
Ga2o3 and Its Vertical Structure Leds
micromachines Review Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs Weijiang Li 1,2,3, Xiang Zhang 1,2,3, Ruilin Meng 1,2,3, Jianchang Yan 1,2,3, Junxi Wang 1,2,3, Jinmin Li 1,2,3 and Tongbo Wei 1,2,3,* 1 State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China; [email protected] (W.L.); [email protected] (X.Z.); [email protected] (R.M.); [email protected] (J.Y.); [email protected] (J.W.); [email protected] (J.L.) 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China * Correspondence: [email protected]; Tel.: +86-010-8230-5430 Received: 7 April 2019; Accepted: 8 May 2019; Published: 13 May 2019 Abstract: β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. -
The Journal of Gemmology Editor: Dr R.R
he Journa TGemmolog Volume 25 No. 8 October 1997 The Gemmological Association and Gem Testing Laboratory of Great Britain Gemmological Association and Gem Testing Laboratory of Great Britain 27 Greville Street, London Eel N SSU Tel: 0171 404 1134 Fax: 0171 404 8843 e-mail: [email protected] Website: www.gagtl.ac.uklgagtl President: Professor R.A. Howie Vice-Presidents: LM. Bruton, Af'. ram, D.C. Kent, R.K. Mitchell Honorary Fellows: R.A. Howie, R.T. Liddicoat Inr, K. Nassau Honorary Life Members: D.). Callaghan, LA. lobbins, H. Tillander Council of Management: C.R. Cavey, T.]. Davidson, N.W. Decks, R.R. Harding, I. Thomson, V.P. Watson Members' Council: Aj. Allnutt, P. Dwyer-Hickey, R. fuller, l. Greatwood. B. jackson, J. Kessler, j. Monnickendam, L. Music, l.B. Nelson, P.G. Read, R. Shepherd, C.H. VVinter Branch Chairmen: Midlands - C.M. Green, North West - I. Knight, Scottish - B. jackson Examiners: A.j. Allnutt, M.Sc., Ph.D., leA, S.M. Anderson, B.Se. (Hons), I-CA, L. Bartlett, 13.Se, .'vI.phil., I-G/\' DCi\, E.M. Bruton, FGA, DC/\, c.~. Cavey, FGA, S. Coelho, B.Se, I-G,\' DGt\, Prof. A.T. Collins, B.Sc, Ph.D, A.G. Good, FGA, f1GA, Cj.E. Halt B.Sc. (Hons), FGr\, G.M. Howe, FG,'\, oo-, G.H. jones, B.Se, PhD., FCA, M. Newton, B.Se, D.PhiL, H.L. Plumb, B.Sc., ICA, DCA, R.D. Ross, B.5e, I-GA, DGA, P..A.. Sadler, 13.5c., IGA, DCA, E. Stern, I'GA, DC/\, Prof. I. -
June 2008 'Tairus' Created Gems: “Part I - Beryl”
Sponsored by Ministry of Commerce & Industry Volume 51 Lab Information Circular June 2008 'Tairus' Created Gems: “Part I - Beryl” In the Volume 49 of Lab Information Circular, November 2007, PleochroismPleochroism: : Dichroism varied from weak in aquamarine to we reported “Synthetic Beryl of Paraiba colour” produced by very strong in darker coloured varieties like purple pink or Tairus Co. Ltd. in order to take the advantage of the popularity of orange red (see figure 2). 'Paraiba' tourmalines. Thereafter, we procured sets of various coloured beryls and corundum from the same manufacturer for our research and reference purpose. The study of these sets has been divided into two parts; this issue describes the study of beryl set, while the study of corundum set will be published in the next issue. 2.a 2.c 2.e The Beryl set consisted of five colour varieties (figure 1), namely, green (emerald), light blue (aquamarine), electric greenish blue (paraiba type), purple pink and orange red. All specimens were facetted as square step and measured 6 X 6 mm. 2.b 2.d 2.f Figure 2 Pleochroic colours of Tairus created Beryls Absorption Spectrum:Spectrum : The spectrum varied as per the colour variety; emerald showed a typical chromium spectrum while 'paraiba' colour displayed a strong band at around 430 nm. Purple pink and orange red varieties exhibited strong bands at 460 to 490 and 550 to 600 nm. UV fluorescence:fluorescence : All samples were inert to long wave as well as short wave UV light. Figure 1 Chelsea Filter Reactioneaction: : Emerald revealed a red glow while all Standard gemmological tests and advanced analysis on FTIR other varieties were either inert or did not displayed any reaction. -
V.Lelting and Transformation Remperatures of Mineral and \Llied Substances
v.lelting and Transformation remperatures of Mineral and \llied Substances I F. c. KRACEK ONTRIBUTIONS TO GEOCHEMISTRY EOLOGICAL SURVEY BULLETIN 1144-D HTED STATES GOVERNMENT PRINTING OFFICE, WASHINGTON : 1963 UNITED STATES DEPARTMENT OF THE INTERIOR STEWART L. UDALL, Secretary GEOLOGICAL SURVEY Thomas B. Nolan, Director For sale by the Superintendent of Documents, U.S. Government Printing Office Washington, D.C. 20402 CONTENTS Page Abstract~------------------------------------------------------- 1 General discussion----------------------------------------------- 1 Acknowledgments____________________________________________ 3 General references _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 3 Elements ------------------------------------------------------- 4 Oxides---------------------------------------------------------- 10 Oxide systems involving A120 3 ------------------------------------ 13 Oxide systems exclusive of Al2o3• B 2o 3, Si02 --------------------- 14 Silicate systems, binary__________________________________________ 17 Silicate systems, ternary _________________________________________ 21 Silicate systems, quaternary and higher ________ ----- _______________ 30 Silicate systems, miscellaneous ___________________________________ 32 Carbonates------------------------------------------------------ 33 Systems, miscellaneous __________________________________________ 36 References------------------------------------------------------ 63 ILLUSTRATIONS Figure 1. The system FeO -------------------------------------- -
Transfers Young, Stephanie Lynne, Chalfont St
The Journal of Gemmology2010 / Volume 32 / Nos. 1–4 The Gemmological Association of Great Britain The Journal of Gemmology / 2009 / Volume 31 / No. 5–8 The Gemmological Association of Great Britain 27 Greville Street, London EC1N 8TN T: +44 (0)20 7404 3334 F: +44 (0)20 7404 8843 E: [email protected] W: www.gem-a.com Registered Charity No. 1109555 Registered office: Palladium House, 1–4 Argyll Street, London W1F 7LD President: Prof. A. H. Rankin Vice-Presidents: N. W. Deeks, R. A. Howie, E. A. Jobbins, M. J. O'Donoghue Honorary Fellows: R. A. Howie Honorary Life Members: H. Bank, D. J. Callaghan, T. M. J. Davidson, J. S. Harris, E. A. Jobbins, J. I. Koivula, M. J. O'Donoghue, C. M. Ou Yang, E. Stern, I. Thomson, V. P. Watson, C. H. Winter Chief Executive Officer: J. M. Ogden Council: J. Riley – Chairman, A. T. Collins, S. Collins, B. Jackson, C. J. E. Oldershaw, L. Palmer, R. M. Slater Members’ Audit Committee: A. J. Allnutt, P. Dwyer-Hickey, J. Greatwood, G. M. Green, J. Kalischer Branch Chairmen: Midlands – P. Phillips, North East – M. Houghton, North West – J. Riley, Scottish – B. Jackson, South East – V. Wetten, South West – R. M. Slater The Journal of Gemmology Editor: Dr R. R. Harding Assistant Editor: M. J. O’Donoghue Associate Editors: Dr A. J. Allnutt (Chislehurst), Dr C. E. S. Arps (Leiden), G. Bosshart (Horgen), Prof. A. T. Collins (London), J. Finlayson (Stoke on Trent), Dr J. W. Harris (Glasgow), Prof. R. A. Howie (Derbyshire), E. A. Jobbins (Caterham), Dr J.