¨APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (602) 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
NEW ULTRA HIGH-SPEED CIRCUIT TECHNIQUES WITH ANALOG ICs
By Christian Henn, Burr-Brown International GmbH
With the increasing use of current-feedback amplifiers, the TECHNICAL PROCESS REQUIREMENTS Diamond Structure has come to play a key role in today’s FOR COMPLEMENTARY CIRCUIT TECHNIQUES analog circuit technology. Two new macro elements that Circuits implemented in push-pull arrangements, in which function in this structure are the Diamond Transistor and its both NPN and PNP transistors are located in the signal path, abridged version, the Diamond Buffer. These elements can be demand a particular high level of symmetry in the electrical used for both voltage and current control of analog signals up parameters of complementary transistors. See Figure 2. to several 100MHz. The OPA660 combines both of these elements in one package. Starting with a discussion of the The most important requirement is that the bandwidths be equal, since the slower transistor type determines the perfor- technical process requirements for complementary-bipolar circuit technology, we would like to focus on the basic and mance capability of the entire circuit. The bandwidth of an integrated bipolar transistor is dependent both upon the base functional circuits of the Diamond Transistor and Buffer. These circuits can be used in areas ranging from video signal transit time and upon various internal transistor resistances and p-n junction capacitances. processing and pulse processing in measurement technology to interface modules in fiber optic technology. Another important point is the DC performance, which can
be described best by the parameters saturation current IS, SYMBOLS AND TERMS current gain BF and early voltage. The Diamond Transistor and buffer are manufactured using a complicated process In technical literature, various symbols and terms are used with vertically structured NPN and PNP transistors. Table I to describe the same circuit structure, see Figure 1. Burr- shows the most important parameters of a transistor of size Brown has chosen the transistor symbol with opposed 111. Two metallization layers with a gold surface simplify emitter arrows. The symbol calls attention to the functional the connection between the circuit parts. similarity of the bipolar and Diamond Transistors, and the double arrows refer to the Diamond Transistor’s comple- mentary construction and the ability to operate it in four APPLICATION EXAMPLES quadrants. Regardless of how it is depicted, this type of • Wide-bandwidth amplifiers structure has a high-impedance input, a low-impedance • Video signal processing input/output, high transconductance and a high-impedance • Pulse processing in radar technology current source output. The voltage is transferred with very • Ultrasonic technology low offset of +7mV from the high-impedance input to the • Optical electronics low-impedance input/output. • Test and communications equipment
3C
VIN1 1B PNP Transistor NPN Transistor gm IOUT VIN2 BEB C BEBC
2E p - Epi p n - Epi n
Diamond Transistor Voltage-Controlled Current Source p - Substrate Transconductor Macro Transistor 3 + + Current Conveyor II+ n Doping p Doping Silicondioxide
1 nÐ Doping pÐ Doping Poly-Silicon (implanted) X Z CCII+ I Y OUT 2
FIGURE 1. Symbols and Terms. FIGURE 2. Complementary Bipolar Technique (CBip).
©1993 Burr-Brown Corporation AB-183 Printed in U.S.A. May, 1993
SBOA047 PARAMETER NPN PNP DIM The Operation Transconductance Amplifier section, or OTA, Current Gain 220 115 will be referred to as the Diamond Transistor in the follow- Early voltage 66 30 V ing. Its three pins are named base, emitter, and collector, like C 0.26 0.50 pF JS the pins of a bipolar transistor. This similarity in terms CJE 0.02 0.02 pF Ω points to the basic similarity in function of the two transis- RB 540 429 Ω RC 46 43 tors. Ideally, the voltage at the high-impedance base is Transit Frequency 3.5 2.7 GHz transferred to the emitter input/output with minimal offset • symmetric NPN/PNP pairs • n-epitaxy, p-collector implantation voltage and is available there in low-impedance form. If a • complex process sequence • complementary B/E structures • n-cube • isolation variations current flows at the emitter, then the current mirror reflects • p+ and n+ buried layer this current to the collector by a fixed ratio. The collector is thus a complementary current source, whose current flow is TABLE I. Process Parameter. determined by the product of the base-emitter voltage and the transconductance. Because of the PTAT (Proportional to SIMPLIFIED CIRCUIT DIAGRAM Absolute Temperature) power supply, the transconductance OF THE DIAMOND TRANSISTOR is independent of temperature and can be adjusted by an external resistor. The OPA660, Figure 3, is a new type of IC which can be used universally. It consists of a voltage-controlled current Besides these features, the Diamond Transistor and Buffer source (Diamond Transistor), a complementary offset-com- can process frequencies of up to several 100MHz with very pensated emitter follower (buffer amplifier, Diamond Buffer), low errors in the differential phase and gain. Thus, they are and a power supply. This new IC enables users to adjust the universal basic elements for the development of complex quiescent current, and through its temperature characteris- circuits designed to process fast analog signals. Current tics, it maintains a constant transconductance in the Dia- control, voltage control, and operation with or without mond Transistor and Buffer. The emitter follower functions feedback are all possible with the Diamond Transistor and without feedback. For this reason, its gain is somewhat less Buffer. See Table II. than one and is slightly dependent upon the load resistance. The main task of the emitter follower is to decouple signal PARAMETER UNIT processing stages. DT Transconductance 125mA/V It is distinguished by its extremely short delay time of 250ps Offset Voltage +7mV Offset Drift 50µV/°C and an excellent large-signal bandwidth/quiescent current Input Bias Current 2.1µA ratio. When comparing the Diamond Buffer with the Dia- Output Bias Current ±10µA mond Transistor, it becomes apparent that all aspects of the Input Resistance 1MΩ || 2.1pF Output Resistance 25kΩ || 4.2pF components are identical except for the current mirror. The Differential Gain 0.06% Diamond Buffer can thus be called an abridged version of Differential Phase 0.02% the Diamond Transistor. Quiescent Current 1-20mA TABLE II. Diamond Transistor Parameter.
(7) +5V
DB
DT
VIN VOUT B EC (5) (6) (3) (2) (8)
100Ω 50kΩ
RQ (1) Ð5V (4)
FIGURE 3. OPA660 Schematic.
2 PTAT POWER SUPPLY EQUIVALENT CIRCUIT DIAGRAM PTAT biasing-controlled current source with adjustable qui- The user can construct a simple equivalent circuit diagram, escent current, Figure 4. Figure 5, for the Diamond Transistor based on the previous Each individual transistor stage has a current source as the descriptions. The complementary emitter follower with an Ω load impedance. Thus, control of the current source allows input impedance of 1M || 2.1pF at the base pin can be adjustment of the quiescent current. The adjusted quiescent regarded as a controlled voltage source. Using the fact that currents and the transistors used determine the an emitter follower is, in principle, a voltage-controlled transconductance of the entire circuit. An external resistor, current source whose current flow is dependent upon the R , fixes the quiescent current. We will discuss the exact voltage difference between base and emitter, it is possible to Q determine the output resistance of the emitter. The output equations for the ratio of the quiescent currents RQ and transconductance to I in detail later in this paper. resistance can best be approximated as the reciprocal value Q of the transconductance. A quiescent current set at 20mA results in a transconductance of 125mA/V and a low-imped- Ω +VCC ance output resistance of 8 , which is adjustable but stable with temperature. The collector pin performs like a comple- mentary current source, with output impedance 1 1 1 25kΩ || 4.2pF. The possible positive or negative current flow
V results from the product of the input voltage difference times I’ I’ = t In (10) Q Q transconductance times current mirror factor, which is fixed RQ at AI = 1 in the OPA660. The model presented here shows I’Q I’Q 2 In 10 the similarity to the small-signal behavior of the bipolar gm = RQ transistor. I’Q
10 1 1 OPA660 BASIC CONNECTIONS AND PINOUT CONFIGURATION
RQ For trouble-free operation of the OPA660, several basic ÐV CC components on the power supply, as well as those compo- nents which define function, are necessary. See Figure 6. FIGURE 4. PTAT Power Supply. The triple configuration of the supply decoupling capacitors at pins 4 and 7 guarantees a low-impedance supply up to 1GHz and supplies the IC during large-signal high-fre- ± ±VCC IC = AI ¥ gm ¥ VBE quency operation. The voltage supply is 5V, resulting in a C maximum rated output of ±4V. As already mentioned, the RC I = gm ¥ V CC external resistor R between pin 1 and –5V adjusts the IN BE 25kΩ Q B 4.2pF quiescent current. A resistance value of 250Ω results in a 2.1pF Ω 1 quiescent current of 20mA. Process variations can cause this VBE 1M gm ±VCC current to vary between 16mA and 26mA. The product data sheet illustrates the exact relation between R and I . As in 1 ~ 8Ω at I = 20mA Q Q gm Q E discrete HF (high-frequency) transistors, a low-impedance resistor damps oscillation that might arise at the inputs. The FIGURE 5. Equivalent Circuit. circuit consists of the pin capacitances and inductances of the bond wires. The resonant frequency is between 750MHz
Ω RQ = 250 1 8 C
E 2 7 +VCC
Ω RG = 80 to 250 3 +1 6 Out B 470pF 10nF 2.2µF
ÐVCC 4 5 In Ω RG = 80 to 250
2.2µF 10nF 470pF
FIGURE 6. OPA660 Basic Connection
3 and 950MHz, depending upon the package type and layout, BASIC CIRCUITS WITH THE OPA660 and is outside the operating range. The damping resistance Listed below are the basic circuits possible with the Dia- Ω Ω is between 50 and 500 , depending upon the application. mond Transistor: • Emitter Circuit TEST CONFIGURATION • Base Circuit FOR DETERMINING THE DYNAMIC FEATURES • Common Emitter OF THE DIAMOND TRANSISTOR • Common Emitter with Doubled Output Current Figure 7 shows the test configuration to determine the • Current-Feedback Amplifier dynamic features of the Diamond Transistor. The entire test • Direct-Feedback Amplifier Ω system functions as a 50 transmission system to avoid As already mentioned, the signal transmission of the Dia- reflections from the input resistances. Various signal genera- mond Transistor is the inverse of that of the bipolar transis- tors and indicators can be used depending upon the measure- tor. The emitter circuit functions in non-inverting mode and ment task. The layout of the demo boards used here is the base circuit in inverting mode. designed for minimum line length and stray capacitance and uses the three-level combination of supply decoupling ca- The emitter-collector connection enables the user to increase pacitors and 50Ω HF-connectors. Burr-Brown offers these the output current of the emitter follower. Since both cur- demo boards to support design engineers during the test rents flow in the same direction and the current loop factor phase. AI of the OPA660 equals 1, the output current doubles to ±30mA and the output resistance halves. See Figure 9. FUNCTION DIAGRAMS In many applications, the high-impedance collector output is a disadvantage. One possible solution to this problem is to The diagrams introduce two important characteristics that insert the complementary emitter follower between the col- help engineers to understand how the Diamond Transistor lector and the output. The emitter follower then ensures that functions as a voltage-controlled current source with adjust- the load resistance of the collector pin is high and that the able quiescent current. output of the circuit can drive low-impedance loads. See
Figure 8a shows the transfer curve IO/VBE with the quiescent Figure 10. current as a parameter. The transconductance increases with The inverting base circuit has a low-impedance input. This increasing quiescent current. current input has clear advantages in amplifying outputs of Figure 8b illustrates the transconductance dependency upon sensors which deliver currents instead of voltages. the input voltage. It is clear from this diagram that the transconductance of the Diamond Transistor remains more Common Collector Emitter Follower stable over the whole input voltage range than that of a with doubled bipolar transistor. Current Output
R2 VIN VIN
50Ω R1 VOUT VOUT 50Ω RE RE
Ω 50 R4 R3 Generator Network Analyzer FIGURE 9. Emitter-Collection Connection.
FIGURE 7. Test Circuit OTA. Common Base Common Emitter
(B) TRANSCONDUCTANCE R R (A) DT CHARACTERISTIC vs INPUT VOLTAGE C C 10 200 VOUT VOUT
VIN
0 100 I gm O R R mA mA E E V Ð10 0 V Ð40 0mV 40 Ð40 0mV 40 IN V V BE BE FIGURE 10. Emitter Follower. FIGURE 8. OTA Transfer Characteristics.
4 VOUT f–3dB Figures 11 through 13 show the frequency response attained ±100mV 351MHz with a gain of 3.85 and the pulse response achieved with an ±300mV 374MHz input pulse rise time of 1.3ns of the open-loop amplifier ±700mV 435MHz illustrated in the diagram below. We call this open-loop ±1.4V 460MHz ±2.5V 443MHz amplifier a “straight forward amplifier.” TABLE III. –3dB Bandwidth vs Output Voltage. With a quiescent current of 20mA and the applied compo- nent values, the –3dB bandwidth of the open-loop amplifier is between 350MHz at ±100mV and 460MHz at ±1.4V, Ω 180 depending upon the output voltage. See Table III. VOUT The rise/fall time at the output is 1.4ns, and the maximum 56Ω 8 overshoot is under 10% and settles to less than 1% after 5ns. 100Ω 3 VIN The settling time at 0.1%/10-bit is 25ns.
2 CURRENT-FEEDBACK AMPLIFIER Ω Ω 75 51 Advantages:
5.6pF • Fewer transistor stages (signal delay time). • Shorter signal delay time = larger bandwidth. FIGURE 11. Straight Forward Amplifier. • Small-signal bandwidth independent of gain compensa- tion of the frequency response possible with feedback resistance instead of capacitance. OPA660 OTA • Complementary-symmetric circuit technique improves 20 large-signal performance. 2.5Vpo 15 Disadvantages: 10 1.4Vpo 5 0.7Vpo • Low-impedance inverting input. • Asymmetric differential inputs. 0 0.3Vpo • Low common-mode rejection ratio.
dB –5 • Relatively high input offset voltage. –10 0.1Vpo –15 –20 ADVANTAGES A CF-AMPLIFIER –25 HAS WITH THE OPA660 Ð30 The –3dB bandwidth stays constant over the entire modula- 100k 1M 10M 100M 1G tion range up to ±2.5V and gains up to 12. Quiescent current Frequency (Hz) control guarantees an excellent bandwidth /quiescent current , , IQ = 20mA, R1 = 100 R4 = 51 R2 = 180, ratio. See Figure 16. , R3 = 56, R4p = 75 C4p = 5.6pF RQ varies the quiescent current to produce the necessary FIGURE 12. Straight-Forward Amplifier Frequency bandwidth. Feedback resistances can optimize frequency Response. response over a broad range. This configuration also pro- vides excellent pulse behavior, even up to large pulse ampli- tudes. Burr-Brown offers the Current-Feedback Amplifier OTA PULSE RESPONSE completely assembled as a small demo board under the part number DEM-OPA660-2GC.
C1 R3 R2 47Ω (V)
O 5 6 V 0V DB VOUT 8 R FPO 1 V 3 IN R4 2
Output Voltage = 5Vp-p R5
FIGURE 13. Pulse Behavior of a Straight-Forward Amplifier with Compensation. FIGURE 14. Current-Feedback Amplifier.
5 DIRECT-FEEDBACK AMPLIFIER OPA660 CURRENT FEEDBACK Another interesting basic circuit with the OPA660 is the so- 20 2.5Vpo called Direct-Feedback Amplifier, Figure 15. The idea of 15 using voltage feedback from the collector to the emitter for 10 1.4Vpo Current-Conveyor structures was suggested for the first time 5 0.7Vpo 0 a few years ago, and even in test configurations with simple 0.3Vpo
Current-Conveyor structures, this design demonstrated ex- dB –5 cellent RF features. We named this structure the Direct- –10 0.1Vpo Feedback Amplifier, due to its short feedback loop across –15 the complementary current mirror. As shown in detail with –20 the Current-Feedback Amplifier, the open-loop gain of the Ð25 Direct-Feedback Amplifier varies according to the closed- Ð30 loop gain. This relation causes the product of the open-loop 100k 1M 10M 100M 1G Frequency (Hz) gain, VO, and feedback factor, kO, to stay constant, while the bandwidth also remains independent of the adjusted total Ω, Ω, Ω, Ω, IQ = 20mA, R1 = 47 R2 = 56 R4 = 200 R5 = 22 Gain = 10 gain. The currents at the emitter and collector always flow in the same direction. The current from the collector across R3 FIGURE 16. Current-Feedback Amplifier Frequency causes an additional voltage drop in XE and counteracts the Response. base-emitter voltage. The reduced voltage difference, how- ever, causes reduced current flow at the emitter and across OPA660 DIRECT FEEDBACK the current mirror at the collector. It functions like double 20 2.5Vpo feedback and is adjusted by the ratio between R3 and XE. The 15 Diamond Buffer decouples the high-impedance output. 10 1.4Vpo Burr-Brown offers the Direct-Feedback Amplifier completely 5 1.7Vpo 0 assembled as a small demo board under the part number 0.3Vpo DEM-OPA660-3GC. –5 dB –10 Figures 17 and 18 show the excellent test results with the 0.1Vpo Direct-Feedback Amplifier. –15 –20 Using a quiescent current of 20mA and the given component values and compensation at the emitter, it is possible to –25 ± ± –30 attain 330MHz at 100mV and max 550MHz at 1.4V 100k 1M 10M 100M 1G bandwidth. The frequency response curve is extremely flat Frequency (Hz) and shows peaking of 1dB only with output signals of R = 100Ω, R = 120Ω, R = 390Ω, R = 200Ω, ± 1 2 3 4 2.5V. The voltage gain G is 3. The pulse diagrams shown R = 68Ω, I = 20mA, R = 80Ω, C = 6.4p here for small-signal modulation illustrate the excellent 6 Q p p pulse response. There is no difference in pulse response FIGURE 17. Direct-Feedback Amplifier Frequency between 300mVp-p and 5Vp-p. Response. The calculated slew rate is 2500V/µs during 5Vp-p signals. Previously, this slew rate could only be achieved using hybrid circuits with a quiescent current between 20mA and Gain = 3, tr = tf = 2ns, VI = 100mVp–p 500mA and a voltage supply of ±15V for ±2.5V signals. See Table IV.
FUNCTIONAL CIRCUITS WITH THE OPA660 Ω 120 5 6 DB VOUT (V)
8 O
Ω V 100 V 3 R3 IN 390Ω 2
XE 100Ω 82 6.4pF FIGURE 18. Pulse Behavior of the Direct-Feedback FIGURE 15. Direct-Feedback Amplifier. Amplifier.
6 VIDEO RECORD AMPLIFIER VOUT f–3dB ±100mV 331MHz A good way to see the advantages of current control over ±300mV 362MHz voltage control is to compare them when driving magnetic ±700mV 520MHz ±1.4V 552MHz heads in video technology. Analog recording requires high ±2.5V 490MHz linearity, while digital recording demands sharp edges and low phase distortion, since the zero crossing point contains TABLE IV. –3dB Bandwidth vs Output Voltage. the relevant information. A special recording amplifier is necessary to drive the • Driver Circuits for Diodes Capacitive/Inductive Loads rotating video heads. This amplifier, Figure 19, delivers the • Operational Amplifiers current to magnetize the tape. The recording current can be between 1mA and 60mA, depending upon the amplitude, • Line Drivers type of recording, and type of tape used. The current flowing • Integrators/Rectifier Circuits through the video heads must be independent of the fre- • Receiver Amplifier for Pin Diodes quency and load. Current source control can deliver current through the load up to the rated output limit, independent of • Active Filters the voltage drop. In addition, the recording current is di- The new circuit technology really comes into full use, rectly proportional to the magnetic field intensity and flux however, in applications in which the current is the actual density. The record drive amplifier for digital signals shown signal. Such applications include active filters with Current- here functions in a bridge configuration, in which the invert- Conveyor structures, control of LED and laser diodes, as ing and non-inverting digital data streams control the signal well as control of tuning coils, driver transformers, and differentially. Bridge operation, and thus a doubled voltage magnetic heads for analog and digital video recording. range, is necessary because the voltage drop across the load inductance exceeds the voltage range of the Diamond Tran- sistor at the 30MHz recording rate and maximum record current. The common emitter resistor allows simple adjust- +V +V CC CC OUT ment of the transconductance. RQ ÐVCC In previous amplifiers, relays separated the replay and record
R amplifiers when switching from recording to replay. Using B the OPA660 or the OPA2662, which contains two Diamond Transistors with high-current output stages, the I (OPA660) ROG Q EN Data 1 or EN inputs (OPA2662) can switch the record drive ampli- EQ EN2 fier into high-impedance mode. The gate in front of the Playback output stage stops the digital data stream. In high-impedance Amplifier mode, the output stage requires very little current. RB TTL REC DRIVER AMPLIFIER FOR LED TRANSMISSION DIODES ÐVCC ÐVCC OUT The advantages of current control also become apparent FIGURE 19. Video Record Amplifier. when driving light-emitting diodes and laser diodes in ana- log/digital telecommunications and in test procedures with +5V +5V modulated laser light. Using the OPA2662, it will be pos- sible to control laser diodes by a complementary-bipolar 100Ω 22Ω 22Ω current source; using the OPA660, it is already possible to 2 control LEDs with ±30mA drive current. Figure 20 shows 220Ω 3 Q1 Q2 the circuit implementation. The quiescent current is 20mA max when R = 220Ω, and the inputs of both emitter 8 Q V IN 8 followers, which are not illustrated in the Figure, are grounded 3 through 220Ω resistances, since these inputs are not neces- 4148 270Ω Ω sary in this application. The current mirror consisting of Q 220 LED 1 2 and Q2 sets the quiescent current for the LED, which can PBIAS 100Ω then be adjusted by PBIAS. Two Diamond Transistors wired 200Ω parallel to each other deliver the signal current. Diamond Transistors can be connected to each other at the collector Ð5V output to increase the output current, which has already increased to ±30mA in this configuration. The diode 4148 FIGURE 20. Wideband LED Transmitter. protects the transmitter diodes against excessive reverse voltages.
7 inverting operations are possible. The ratio of the feedback +VCC resistances determines the closed-loop gain, and the user can attain optimum frequency response by adjusting the open-
loop gain externally with ROG. The frequency response of the C differential amplifier is equivalent to that of a 2nd order low- B 1 pass Butterworth filter with gain. Due to the additional delay V R2 IN time in the control loop caused by the feedback buffer, the B2 V ROG OUT frequency response is poorer than the current feedback by 30%. The OPA622, which was recently introduced, contains R1 a Diamond Transistor and two buffers. With the output current capability of ±100mA, this IC can drive several low- impedance outputs. The output buffer has its own supply ÐVCC voltage pins to decouple the output stage from differential stage and to enable external current limitation. Because of FIGURE 21. Voltage-Feedback Amplifier. the identical high-impedance inputs, the typical offset volt- age at the output is ±1mV, and the common-mode rejection OPERATIONAL AMPLIFIER WITH ratio is over 70dB. These values are excellent results for RF VOLTAGE FEEDBACK IN DIAMOND STRUCTURE amplifiers. The disadvantages of the Current-Feedback Amplifier listed above are unbalanced inputs, low-impedance inverting in- DRIVER AMPLIFIER FOR put, poor common-mode rejection ratio, and size of the input LOW-IMPEDANCE TRANSMISSION LINES offset voltage. Now, we would like to present a concept The ability of the Current-Feedback Amplifier to deliver which integrates the Diamond structure with voltage feed- ±15mA output current makes it a good choice as a driver back in one circuit. An additional buffer transforms the amplifier for low-impedance (50Ω/75Ω) coaxial transmis- current feedback of the Current Feedback Amplifier into sion lines. To transmit the pulse free of reflections, the voltage feedback. Figures 21 and 22 illustrate the circuit transmission line must be terminated on both sides by the diagram and the extended Voltage-Feedback Amplifier. The characteristic impedance of the line. A resistance in series to feedback buffer is identical to the input section of the the output resistance of the driver amplifier, Figure 23, Diamond Transistor and forms one side of the differential matches the output of the amplifier to the line. The total amplifier, while the Diamond Transistor is the other side. resistance of the output and series resistors should be equal Both buffer outputs are connected to R , which determines OG to the characteristic impedance. The output resistance of the open-loop gain and corresponds to the emitter degenera- operational amplifiers rises with increasing frequency. Thus, tion resistor of a conventional differential stage. the impedances are no longer matched and reflections arise The output of this differential stage is the collector of the due to high-frequency components in the signal. The output Diamond Transistor, which is driven in quasi open-loop resistance of Current-Feedback Amplifiers rises, for ex- mode due to the output buffer. Both inverting and non- ample, up to 25Ω at 50MHz.
+VCC +VEE
ROG
VIN VOUT
ÐVCC ÐVEE
R1 R2
FIGURE 22. Extended Voltage-Feedback Amplifier. 8 DIFFERENTIAL OUTPUT R The circuit in Figure 24 is well suited to applications with O 56Ω 50Ω Z 6 O larger dynamic ranges, which require a differential output to DB 5 drive triax lines. A signal amplitude of ±5V is provided to 8 Ω V 47 drive a load which is not grounded. The load could be the IN 3 RIN 50Ω input resistance of an RF device in an EMC contaminated Ω 2 200 environment. Resistances in series to each amplifier output R match the output to the line. These resistances are selected IN 200Ω at somewhat less than half of the characteristic impedance. While the rise/fall time and bandwidth do not change, the slew rate doubles. FIGURE 23. 50Ω Driver Amplifier.
Ω MONOCHROMATIC MATRIX OR 200 B/W HARDCOPY OUTPUT AMPLIFIER 100Ω ~ZO /2 The inverting amplifier in Figure 25 amplifies the three Z input voltages, which correspond to the luminance section of O 47Ω the RGB color signal. Different feedback resistances weight RL R 47Ω the voltages differently, resulting in an output voltage con- O ~ZO /2 sisting of 30% of the red, 59% of the green, and 11% of the blue section of the input voltage. The way in which the 100Ω signal is weighted corresponds to the transformation equa- 200Ω tion for converting RGB pictures into B/W pictures. The 200Ω output signal is the black/white replay. It might drive a monochrome control monitor or an analog printer (hardcopy output). FIGURE 24. Balanced Driver.
OPERATIONAL 6 DB V TRANSCONDUCTANCE AMPLIFIER (OTA) 5 LUMINANCE 8 The Diamond Transistor and Diamond Buffer form a differ- 3 ential amplifier with two symmetric high-impedance inputs with current output. This amplifier is also known as the 2 Ω Ω Operational Transconductance Amplifier, Figure 26. In this 665 200 VRED application, RE sets the open-loop gain. The bipolar current Ω output can be connected to a discrete cascode transistor, 340 V which enables wideband and high voltage outputs. GREEN Ω 1820 VBLUE NANOSECOND INTEGRATOR One very interesting application using the OPA660 in physi- FIGURE 25. Monochrome Amplifier. cal measurement technology is a non-feedback ns-integrator, Figures 27 and 28, which can process pulses with an amplitude +15V of ±2.5V, have a rise/fall time of as little as 2ns, and pulse width of more than 8ns. The voltage-controlled current source 1kΩ charges the integration capacitor linearly according to the following equation: VOUT
VC = VBE • gm • t/C +VB BFQ262 VC = Voltage At Pin 8
VBE = Base-Emitter Voltage gm = Transconductance 8 t = Time 3 C = Integration Capacitance +VIN
The output voltage is the time integral of the input voltage. 2 It can be calculated from the following equation: RE
T 6 ÐVIN DB gm V = Output Voltage 5 I = gm ¥ (V Ð V ) V = ∫ V dt O OUT IN+ INÐ O C BE T = Integration Time O C = Integration Capacitance FIGURE 26. Operational Transconductance Amplifier. 9 R3 200Ω 6 Sample 10 DB &