ISPlasma/IC-PLANTS is a specialized international symposium that Please resister on our website. brings together about 1,000 world-leading scientists and engineers Registration in Nagoya, Japan to discuss latest researches in the fields of advanced plasma science, its applications for processing and Advanced Online Registration is required. manufacturing of nitrides and nanomaterials, as well as new Registration Fee： General Student 8th International Symposium on Advanced Plasma Science systems for technology transfers. This symposium will address issues Early Registration（Until Feb 20, 2016） JPY 45,000 JPY 15,000 and its Applications for Nitrides and Nanomaterials / such as global warming, resources and energy problems to which 9th International Conference on Plasma-Nano Technology & Science On-site Registration JPY 50,000 JPY 20,000 ISPlasma2016 advanced plasma science and its application technologies can Tutorial Fee： greatly contribute. In this symposium biosensing technologies will Participant in Main Symposium JPY 1,000 JPY 1,000 be also highlighted, because of their increasing importance in Tutorial Registration Only JPY 10,000 JPY 5,000 healthcare, agri-food and environmental areas. We hope that this Banquet Fee（on March 8, 2016） JPY 6,000 JPY 3,000 symposium will provide an ideal venue for the exchange of new ideas and information, and also support the initiation or further * Refunds cannot be made at any reason. development of international collaborations among those who March 6-10, 2016 work in these multidisciplinary fields. Nagoya University, Nagoya, Japan Related Fields Venue Organizing Committee Plasma Science & Technologies Nagoya University Furo-cho, Chikusa-ku, Nagoya JAPAN ・Plasma Source ・Advanced Plasma Diagnostics Phone：+81-52-581-3241 ・Modeling & Simulation ・Plasma in Liquid Chairperson ・Thin Film Deposition Process ・Etching Process From Nagoya Station From Kanayama Station ・Flexible Electronics ・Plasma Biology & Medicine Hiroshi Amano, Nagoya University ・Plasma Agriculture ・Plasma for Nano & Green Technologies 15min. by Subway Higashiyama-line
Nitride Semiconductors Motoyama Transter 21min. by Subway Meijo-line Vice-Chairperson ・ Crystal Growth of GaN & Related Materials ・MBE Growth & Nitrogen Source 2min. by Subway Meijo-line Masaru Hori, Nagoya University ・Characterization ・Device Processing ・Optical & Optoelectronic Devices ・Electron & Power Devices Hideto Miyake, Mie University Nagoya Daigaku Station Mineo Hiramatsu, Meijo University Nanomaterials 1min. on foot ・Nanodots & Nanoparticles ・Nanotubes, Nanowires & Nanorods ・2D Nanomaterials ・Porous Materials & Membranes Nagoya University ・Composites & Functionally Grade Materials Sponsored by： The Japan Society of Applied Physics ・Surface Modification & Functionalization Co-sponsored by： Nagoya University ・Applications for Energy, Environment, Nanomedicine & Sensing Nagoya Institute of Technology Kami - Iida Meijo University Biosensing Chubu University ・Detection Technologies ・Optical Devices, Baioimaging Heian - Dori The Japan Society of Plasma Science and Nuclear Fusion Research ・Electrochemical Devices ・Biosensors Owari - Seto Nagoya Hisaya Ozone The Japanese Association for Crystal Growth ・Biomarkers & Biosensor Surfaces ・Fabrication Technologies odori University Nagoya ・Biomaterials ・Biodevices, μTAS, Lab on a Chip Marunouchi Sakae machi Motoyama Chikusa Fujigaoka Contact Fushimi Sakae Imaike Akaike Nakamura Tsurumai Secretariat：Inter Group Corp kuyakusyo Kamimaezu Gokiso E-mail：[email protected] Phone：+81-52-581-3241 Special Issue Kanayama Takabata Selected papers will be published in a special issue of Nonami a scientific journal. Aratama http://www.isplasma.jp/ bashi Nagoya-ko Centrair - Airport ※The photograph is an image. Schedule at a glance Time 3/6（Sun） 3/7（Mon） 3/8（Tue） 3/9（Wed） 3/10（Thu） Time 9:00 9:00 9:10 Registration 9:00-19:00 Registration 09:10-16:40 Registration 9:10-19:00 Registration 9:10-16:30 9:10 9:30 Plasma Science & Nitride Plasma Science & Nitride Nanomaterials 5 Biosensing 5 Plasma Science & Nitride Nanomaterials 7 9:30 Technologies 3 Semiconductors 3 Technologies 5 Semiconductors 5 < Carbon / 2D
15:30 Tutorial Topical Session 3 15:30 Nanomaterials Break 15:30-15:45 Break 15:30-15:45 Break 15:30-15:45 15:40 15:40 Prof. Kenji Shiraishi Dr. Bruno Daudin 15:45 Nagoya University Plasma Science & Nitride CEA-Grenoble 15:45 Topical Session 1 Topical Session 2 Technologies 2 Semiconductors 2
18:30 Banquet 18:30 Welcome Reception 19:00 18:30-20:30 19:00 18:30-20:00 19:30 19:30 20:00 20:00 20:30 20:30 INVITED SPEAKERS PLENARY SPEAKER A. Subramaniam（Nanyang Technological University, SINGAPORE） GaN transistors on silicon using non-gold process technology Akira Fujishima PLASMA SCIENCE T. Wernicke（Technische Universität Berlin, GERMANY） （Tokyo University of Science, JAPAN） G. Fridman（A.J. Drexel Plasma Institute, Drexel University, USA） Deep UV emitters Water photolysis and photocatalysis Non-equilibrium gliding arc discharge plasma-activated water in plasma agriculture： Bao-ping Zhang（Xiamen University, CHINA） Pathogen control, plant growth enhancement, and reduction of irrigation water consumption Loss study and fabrication of low-threshold GaN-based VCSELs D. Go（University of Notre Dame, USA） Plasmas with liquid electrodes : Fundamental processes and applications to chemical processing NANOMATERIALS KEYNOTE SPEAKERS S. Kaminaga（SPP Technologies Co., Ltd., JAPAN） P. R. Cabarrocas（Ecole Polytechnique, FRANCE） Plasma processing technology for MEMS and trillion sensors Vertical and in-plane silicon nanowires for radial junction solar cells ¨ Z. Machala（Comenius University, SLOVAKIA） NITRIDE SEMICONDUCTORS and transistors produced in a PECVD environment Water activated by non-thermal air plasma discharges for bio-decontamination Y. Darma（Institut Teknologi Bandung, INDONESIA） K. Kishino（Sofia University, JAPAN） and bio-medical effects Plasmon-exciton interaction and screening of exciton Progress of InGaN-based nanocolumns and visible nanoemitters M. Mozetič（Jožef Stefan Institute, SLOVENIA） in ZnO-based thin film on different electronic environments prepared by rf-plasma assisted molecular beam epitaxy Selective functionalization of polymers with amino groups for excellent F. Faupel（Christian-Albrechts-Universität zu Kiel, GERMANY） haemocompatibility of vascular grafts Plasma deposition of functional nanocomposites NANOMATERIALS O. Sakai（The University of Shiga Prefecture, JAPAN） S. Hara（Hokkaido University, JAPAN） S. Hwang（Samsung, KOREA） Plasma media created in abnormal-permeability metamaterial space Axial heterojunctions in free-standing ferromagnetic MnAs / semiconducting InAs nanowires Device application of graphene and 2D materials A. Koshio（Mie University, JAPAN） NITRIDE SEMICONDUCTORS Development of one-step plasma synthesis for metal-free carbon BIOSENSING C. Skierbiszewski（Unipress, POLAND） nanotubes and novel nanocarbon materials T. Kawai（Osaka University, JAPAN） Nitride based laser diodes grown by high nitrogen flux plasma assisted A. Mizuno（Toyohashi University of Technology, JAPAN） Advanced nanodevices for single biomolecule molecular beam epitaxy Electrostatics and non-thermal plasma for handling and detection--- Fabrication and Performance--- M. Bockowski（Unipress, POLAND） processing of biological cells and molecules HVPE-GaN growth-challenges and perspectives D. Onoshima（Nagoya University, JAPAN） B. Daudin（CEA-Grenoble, FRANCE） Bioimaging devices for regenerative medicine Carrier iocalization in nitride nanowire heterostructures K. Ueno（Saitama University, JAPAN） M. Germain（ExaGaN, BELGIUM） Layered chalcogenide materials : Basic properties and application to atomic-layer electronics TUTORIAL SPEAKERS T. B. A. J. Xu（Nanjing University, CHINA） T. Hashizume（Hokkaido University, JAPAN） Light emission from un-doped and doped nanocrystalline Si-based multilayers PLASMA SCIENCE Interface control technologies for GaN power transistors T. Yanagida（Kyushu University, JAPAN） H. Hirayama（RIKEN, JAPAN） Single crystalline metal oxide nanowires and their promises U. Czarnetzki（Ruhr-Universitat Bochum, GERMANY） Recent progress and future prospects of AlGaN deep-UV LEDs Charged particle generation, transport, and fluxes in laboratory plasmas Dr. Yoshio Honda (Nagoya University, JAPAN) BIOSENSING T.B.A. T. Baba（Yokohama National University） NITRIDE SEMICONDUCTORS M. Kasu（Saga University, JAPAN） Nanolaser biosensors K. Matsumoto（Taiyo Nippon Sanso, JAPAN） Diamond FETs for RF power electronics : Novel hole doping P. Y. Chen（National Tsing Hua University, CHINA） Opportunities and challenges to GaN MOCVD for electron devices Y. Kawakami（Kyoto University, JAPAN） Synthesis of multi-functional surfaces inspired from carnivorous pitcher plants Assessment and control of recombination dynamics in nitride-based C. Wetzel（Rensselaer Polytechnic Institute, USA） semiconductors for tailor-made solid state lighting N. E. Lee（Sungkyunkwan University, KOREA） The challenge of the green gap ‒ development of D. Li（Changchun Institute of Optics, CHINA） Flexible and stretchable sensors for wearable electronics in personal healthcare direct Emitting LEDs in the green and yellow spectral region Growth and Characterization of AlN on sapphire by high-temperature MOCVD T. Ichiki（The University of Tokyo, JAPAN） Y. Otoki（SCIOCS, JAPAN） Flexible sheet-type sensor for measuring cellular oxygen metabolism A. Matusmoto（Tokyo Medical and Dental University, JAPAN） NANOMATERIALS Improvement of electrical device performances by using epi-wafers grown on VAS-GaN substrate Borono-iectin based approaches toward bio-sensing and drug delivery systems K. Shiraishi（Nagoya University, JAPAN） C. Pernot（Nikkiso, JAPAN） S. W. Pang（City University of Hong Kong, HONG KONG） First Principles Theoretical Investigation of Future Nano-Materials Recent Progress of Nitrides DUV-LED Plasma modified electrodes on neural probes and quasi 3D plasmonic biosensors S. Rajan（Ohio State University, USA） S. Takeuchi（The University of Tokyo, JAPAN） BIOSENSING Tunnel junctions for high efficiency visible and ultraviolet optoelectronics T. B. A. T. Ichiki（The University of Tokyo, JAPAN） L. Schowalter（CrystalIS, USA） M. J. Wang（National Taiwan University of Science and Technology, TAIWAN） Biosensing devices : Microfluidic-based platform and beyond High performance, pseudomorphic UVC LEDs on AlN substrates Application of nanoparticles on biosensing
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