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Imaging Transport Resonances in the Quantum Hall Effect Gary Alexander Steele
Imaging Transport Resonances in the Quantum Hall Effect by Gary Alexander Steele Submitted to the Department of Physics in partial fulfillment of the requirements for the degree of Doctor of Philosophy at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY February 2006 °c Gary Alexander Steele, MMVI. All rights reserved. The author hereby grants to MIT permission to reproduce and distribute publicly paper and electronic copies of this thesis document in whole or in part. Author.............................................................. Department of Physics January 19, 2006 Certified by. Raymond C. Ashoori Professor Thesis Supervisor Accepted by . Thomas J. Greytak Professor, Associate Department Head for Education Imaging Transport Resonances in the Quantum Hall Effect by Gary Alexander Steele Submitted to the Department of Physics on January 19, 2006, in partial fulfillment of the requirements for the degree of Doctor of Philosophy Abstract We image charge transport in the quantum Hall effect using a scanning charge ac- cumulation microscope. Applying a DC bias voltage to the tip induces a highly resistive ring-shaped incompressible strip (IS) in a very high mobility 2D electron system (2DES). The IS moves with the tip as it is scanned, and acts as a barrier that prevents charging of the region under the tip. At certain tip positions, short-range disorder in the 2DES creates a quantum dot island inside the IS that enables breach- ing of the IS barrier by means of resonant tunneling through the island. Striking ring shapes appear in the images that directly reflect the shape of the IS created in the 2DES by the tip. Through the measurements of leakage across the IS, we extract information about energy gaps in the quantum Hall system. -
Interplay of Disorder and Interaction in Two-Dimensional Electron Gas in Intense Magnetic fields*
Nobel Lecture: Interplay of disorder and interaction in two-dimensional electron gas in intense magnetic fields* Daniel C. Tsui Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 [S0034-6861(99)00804-1] In this lecture, I would like to briefly go through the was able to demonstrate experimentally the electric-field physics that I have learned in the years since I ventured quantization of the surface space-charge layer, first pro- into what we nowadays call research of semiconductor posed by Schrieffer in the fifties, by doing a tunneling electronics in low dimensions, or in my case, more sim- experiment on InAs to observe directly the quantized ply the electronic properties of two-dimensional systems energy levels and the Landau levels of the resulting two- (Ando et al., 1983). To summarize, electrons confined to dimensional (2D) electrons (Tsui, 1970). However, the the interface of two different semiconductors normally most exciting part of this effort was my discovery, in behave like an ordinary gas of particles in two dimen- writing the paper on this work, of the beautiful work on sions. But, when taken to extreme conditions of low the Si metal-oxide-semiconductor field-effect transistor temperature and high magnetic field, they show new (Si MOSFET) done by the IBM group in Yorktown physics phenomena manifesting the interplay of Heights (Fang et al., 1983). They laid a solid foundation electron-electron interactions and the interaction of the for the development and growth of 2D electron physics electrons with imperfections in the semiconductors. Let in the subsequent decades. me first recall the events in my earlier research that led Based on the IBM work, Jim Allen and I made a tem- me to the journey that Art Gossard, Horst Stormer, and perature dependence study of the inversion layer con- I took in our adventure towards the discovery of the ductance in Si MOSFETs to look for the 2D Anderson fractional quantum Hall effect (FQHE) (Tsui et al., localization-delocalization transition. -
The High Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by DSpace@MIT The High Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects Jesús A. del Alamo Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 [email protected]; T. +1-617-253-4764 Keywords: high electron mobility transistor, HEMT, III-V, two-dimensional electron gas, modulation doping Abstract that is created between dopants and electrons confers these 2010 marked the 30th anniversary of the High- with a mobility that exceeds the bulk value even at relatively Electron Mobility Transistor (HEMT). The HEMT high carrier concentrations. represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular The first demonstrations of modulation doping and the beam epitaxy technology. The HEMT showcased the HEMT took place in the AlGaAs/GaAs system. These would outstanding electron transport characteristics of two- not have been possible without the atomic layer precision dimensional electron gas (2DEG) systems in III-V growth capabilities of molecular beam epitaxy. Through compound semiconductors. In the last 30 years, HEMTs MBE, heterostructures approaching monolayer-level have been demonstrated in several material systems, abruptness, nearly perfectly coherent interfaces and precise most notably AlGaAs/GaAs and AlGaN/GaN. Their dopant placement became possible. All these are essential uniqueness in terms of noise, power and high frequency ingredients for realizing modulation-doped structures with operation has propelled HEMTs to gain insertion in a improved mobility over bulk values. The initial mobility variety of systems where they provide critical enhancements that were observed were quite modest at room performance value. -
The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation del Alamo, Jesus A. "The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects." 2011 International Conference on Compound Semiconductor Manufacturing Technology, May 16-19, 2011, Indian Wells, California. As Published http://www.csmantech.org/Conference%20Information/ APfiles/2011%20AP%20REV%20K.pdf Publisher CS ManTech Version Author's final manuscript Citable link http://hdl.handle.net/1721.1/87102 Terms of Use Creative Commons Attribution-Noncommercial-Share Alike Detailed Terms http://creativecommons.org/licenses/by-nc-sa/4.0/ The High Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects Jesús A. del Alamo Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 [email protected]; T. +1-617-253-4764 Keywords: high electron mobility transistor, HEMT, III-V, two-dimensional electron gas, modulation doping Abstract that is created between dopants and electrons confers these 2010 marked the 30th anniversary of the High- with a mobility that exceeds the bulk value even at relatively Electron Mobility Transistor (HEMT). The HEMT high carrier concentrations. represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular The first demonstrations of modulation doping and the beam epitaxy technology. The HEMT showcased the HEMT took place in the AlGaAs/GaAs system. These would outstanding electron transport characteristics of two- not have been possible without the atomic layer precision dimensional electron gas (2DEG) systems in III-V growth capabilities of molecular beam epitaxy.