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CHINA TAIWAN AIXTRON China Ltd. AIXTRON Taiwan Co., Ltd. Phone +86 (21) 6445 3226 Phone +886 (3) 571 2678 Fax +86 (21) 6445 3742 Cambridge, Fax +886 (3) 571 2738 UK E-Mail [email protected] E-Mail [email protected] Herzogenrath, Germany GERMANY UNITED KINGDOM AIXTRON SE Seoul, South Korea Headquarters AIXTRON SE AIXTRON Ltd. Sunnyvale, USA Tokyo, Japan Phone +49 (2407) 9030 0 Phone +44 (1223) 519 444 Shanghai, China Fax +49 (2407) 9030 40 Fax +44 (1223) 519 888 Hsinchu, Taiwan E-Mail [email protected] E-Mail [email protected]

JAPAN USA AIXTRON K.K. AIXTRON Inc. AIXTRON Group Phone +81 (3) 5781 0931 Phone +1 (408) 747 7140 Representation Fax +81 (3) 5781 0940 Fax +1 (408) 752 0173 E-Mail [email protected] E-Mail [email protected]

KOREA AIXTRON Korea Co., Ltd. Phone +82 (31) 783 2220 Fax +82 (31) 783 4497 E-Mail [email protected] www.aixtron.com DEPOSITION TECHNOLOGY FOR BEGINNERS How MOCVD works Page 2 LAYOUT ·Germany Herzogenrath 2·52134 ·Dornkaulstr. SE AIXTRON BY PUBLISHED www.eric-zimmermann.com

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Periode 6 5 4 3 2 56 13 383 87 20 40 12 2 4 9, 13 87 40 24 Mg 4, 8 Be BaB 0 Ca SrS ,6 ,6 , but rather of two or of two rather , but 7, 7, ,3 , ,1 IIII II 1 3 a 3 3 r 20 11 69 27 10 818 20 49 31 13 5 1 0, 1 Ga Al In Tl ,0 4, ,7 B ,8 4, 4, 8 8 4 4 Gruppe 20 11 72 28 12 82 20 505 11 323 72 14 28 6 12 2 0 Ge Pb SnS IV Si 8, 8 ,0 , 7, 7, ,1 ,1 ,6 , C 0 6 n , 2 2 7 7 20 12 74 31 14 83 2 51 33 15 7 09 As Sb BiB ,9 ,0 1, ,0 N 9, P VV ,0 8 0 i 20 12 79 32 16 848 2 525 1 343 7 161 32 8 1 6 6, 27 09 9 2 4 4 Po Se Te ,0 ,0 7, ,0 ,1 , O 9 S 1 0 , 6 6 I solar cells and all LEDs are based on. are based cells allLEDs solar and iswhathigh-performance vice-versa –this at importantly,Most they are highly efficient temperatures. even high at very example. Moreover, they can also function for phones, mobile in frequencies high semiconductors can “process” the very materials, devices those containing III-V III-V in fast move very can electrons nificant advantages over Silicon. Because Compound semiconductors talline compounds. talline to Table crys- interact form odic can and Peri- Vof the and III of group elements from are they made because ductors” “III-V are called semi also They con- converting light into electric power and light intoconverting electric have sig- have ductor). semicon- (the compound crystal desired into chemicals the the takes place that turns reaction chemical critical There, the gases. into other reactor togetherwith the ported the chemicals are vaporized and trans- To compound produce semiconductors How works MOCVD layers on the substrate the on layers Surface processes while growing Wa fe rW , nology. tech- this in leader aglobal is AIXTRON conductor manufacturers. areas istherefore and the large on deposition the enables equipment MOCVD AIXTRON dosed. finely be can and are ultra-pure gases injected the MOCVD In cost-effective for choice Chemical Re dopinSraekntc Growth Surface kinetics Adsorption Tr ansport action Vaporized metalorganic andothergases afer Deposition process Deposition compound semi- on the substrates (wafers) substrates the on first and most Desorption Ev acuation takes place place takes Substrates in a reactor made by AIXTRON by made areactor in Substrates Page 10 Epitaxy: Growth of Crystalline Layers or “arranged in layers”. in “arranged or word “stacked” The aGreek stemsterm from meaning of crystals. growform they the in refers layers ofwhich single thin, on substrate onto to deposition a suitable the Epitaxy Crystals start to grow to start Crystals Initial state Ga = Gallium atoms =Gallium Ga atoms N=Nitrogen Final state reactor heated the within and precursors with flow Gas stage, precision is measured in nano- in ismeasured precision stage, pro chip LED subsequent the In cessing epitaxial layers on the substrate. layers the epitaxial on to hair ameter the human of average an di- the compares meters. diagram This the entire country. entire the have heightwould of 1cm snowacross film of to spread thatjust athin mean be uniformly size of inch four substrates (100 Ø). itwould to mm precision Germany this we If apply (whichnanometer thick mm). is0.000001 layers film onto thin are deposited usually Such one than are less structure LED an in required films thinnest The iseverything: Precision Precision in Deposition (100 mm Ø) (100 mm 4 inch inch 4 Wafer Wafer The thickness of a single layer has to be very homogenous very be to has layer asingle of thickness The 1,000 km Germany Latitude approx. Diameter of a human hair: 100,000 nm 100,000 hair: ahuman of Diameter a few thousand nm thousand a few 1 atom layer up to to up layer 1 atom Epitaxial layer: layer: Epitaxial Substrate Page 12 LED TV: ©Samsung TV: LED Munich GmbH, ©OSRAM LED: chip Power Munich GmbH, ©OSRAM LED: -Fotolia.com Söllner ©Thomas bulb: LED -Fotolia.com &rockerman © Bapic transistors: und cell Solar ILT, Aachen ©Fraunhofer diode: 12–14: pages credits Picture The color. sharp very a and of energy density ahigh with light trated A TheThe Laser Diode different electronic or optoelectronic devices, such as LEDs, lasers, transistors and solar cells. solar and transistors lasers, LEDs, as such devices, optoelectronic or electronic different into numerous processed are structures crystal different the process, deposition MOCVD the After … pages these on pictures the Aboute ride and copper indium selenide/sulfide. selenide/sulfide. indium copper and ride tellu- cadmium Silicon, cells include solar voltaic solar panels. Materials presently used for photo- as known also modules, to solar make used are of cells Assemblies effect. photovoltaic by the into electricity directly of sunlight energy the A from to light create order In LED. laser of an that to similar looks of alaser structure crystal The color. sharp very a and of energy density ahigh with light trated A laser device laser device solar cellsolar is a solid state device that converts converts that device state asolid is emits a narrow beam of concen- beam anarrow emits From Deposition to Device trial applications. terres- for used being cells are cells, solar III-V solar concentrator so-called In space. in ation radi- against robust very are they as satellites, on used mainly cells are solar III-V Silicon. from cellsmade are solar available currently Most footprint. device small haveavery and easily off and on switched be can They availability. of light speed high the is types laser to other compared as diodes of laser advantage main The faces. layer inter- sharp atomically and quality crystal high to haveultra important very is it a diode, and safer in use than traditional lighting devices. devices. lighting traditional than use in safer and economical more LEDs make heat generation low and consumption power low Their sources. LEDs for and supplies power switched-mode as such switches, both for high-power applications electronic as used commonly are Transistors signals. electronic switch and amplify A The LEDThe The they work. how and of how made are and of LEDs made what are LEDs what exactly exactly explains pages explains pages following the on following the on description The description The households. private in as such lighting, traditional from changeover the format”, to facilitate order “bulb in commercial standard in offered also are lighting general for LEDs latest-generation The … future the of source Lighting transistor are among the world’s smallest light light smallest world’s the among are is a used to used device a semiconductor is From Deposition to Device whereas the “power LED” may be up to several to several up be “powermay the LED” whereas 0.1 about measure mm LEDs smallest The The smallest LEDs measure about 0.1 about measure mm LEDs smallest The grids. smart or cars hybrid phones, mobile as such applications of devices key electronic the are transistors III-V gates. logic as such applications low-power several hundred lumens. lumens. hundred several square millimeters large and provides output of to several up be “powermay the LED” whereas 2 , Page 14 active layer when current is flowing. flowing. is current layer when active side) to the (p-doped “holes” side) so-called and (n-doped electrons transport layer that n-doped an layer and ap-doped in embedded is This light. of the color the determines that zone active an has LED An works: LED an of how explanation scientific …?The know you Did n-doped contact layer zone Active p-doped contact layer wafer 4 inch Saphire 1 growing layer via the gas flow. gas the layer via growing into the interspersed be can atoms these growth, MOCVD example, Silicon for n-doping or Magnesium for p-doping). During (for p-doping and n- for used are atoms Doping zone. active the in (light) into photons transformed then are holes and electrons The LED chips. LED 120,000 and 4,000 between liver de- can wafer size, a4inch chip the on Depending LED. a finished nally resulting of in the production fi- into chips, processed are wafers process deposition the After Power chip (example): 1 mm x1mm 1 mm 2 How LEDs Work , the , the Construction Operation & Mode Transparent contact n-GaN p-GaN Metal contact Lens Housing Metal contact Heat sink Heat Substrate 3 Structure of an LED an of Structure 1 mm –10 mm 1 mm Quantum-Well Quantum-Well Metal contact LED Chip size: size: Chip LED Carrier plate Active zone zone Active with Multi- Nucleation Bond wire Bond (MQW) layer Power chip package Ostar LED chip LED Ostar 4 LED-TV backlight unit with LED with unit backlight LED-TV 5