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Ripplocations in Layered Materials: Sublinear Scaling and Basal Climb James G. McHugh,∗ Pavlos Mouratidis, and Kenny Jolley Dept. of Chemistry, Loughborough University Epinal Way, Loughborough LE11 3TU, United Kingdom (Dated: March 26, 2021) The ripplocation is a crystallographic defect which is unique to layered materials, combining nanoscale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations, in single and multiple van der Waals layers, using analytical and computational techniques. Expressions for the energetic and structural scaling factors of surface ripplocations are derived, which are in close correspondence to the physics of a classical carpet ruck. Our simulations demonstrate that the lowest-energy structure of dislocation pile-ups in layered materials is the ripplocation, while large dislocation pile-ups in bulk graphite demonstrate multilayer delamination, curvature and voids. This can provide a concise explanation for the large volumetric expansion seen in irradiated graphite. Introduction. | It has long been understood that the which can substantially modify the physical properties of plastic deformation of solids proceeds primarily through adsorbed monolayers. [10{13] the nucleation of linear defects, called dislocations, which Ripplocations occur both epitaxially and in the bulk of locally accommodate crystallographic slip. The slipped layered materials. In the context of irradiated graphite, and unslipped crystal regions on either side of a disloca- the bulk ripplocation or "ruck and tuck" mechanism of tion line are related through translation by a lattice vec- dislocation pile-up represents the first proposal of de- tor, which is a topological property of that dislocation, formation due to delamination in the bulk of layered called its Burgers vector, b. The dynamics of disloca- solids, and is likely to be particularly important in ex- tions are dominated by Frank's rule, which dictates that plaining many of the properties of dimensional change the energy of a dislocation is quadratic in the Burgers in highly-irradiated highly oriented pyrolytic graphite vector, E / b2. This causes perfect dislocations to dis- (HOPG) samples. However, while this type of bulk rip- sociate into partials, with Burgers vector of less than a plocation has been found in experimental TEM images full lattice translation [1? , 2]. of irradiated graphite [7, 14{19], it is a relatively rare Recently, distinct behaviour has been observed in lay- defect. Distinct behaviour, including delamination and ered materials. Surface ripples with well-defined crystal- buckling spread across many layers and two-dimensional lographic character comprising sharp, localised folds be- kink band networks [20, 21], has also been observed. This tween regions which are slipped relative to one another motivates further, systematic studies of multi-layer and by an in-plane lattice vector have been observed at the two-dimensional dislocation configurations. (0001) surface of exfoliated MoS2 samples and graphite In contrast to the classical dislocation, ripplocations nanoplatelets [3, 4]. These defects combine the prop- exhibit a sublinear energy scaling as a function of Burg- erties of edge dislocations and delamination, and have ers vector, E / bβ, where β < 1. This ensures that been termed ripplocations. Extensive spherical nanoin- ripplocations comprised of multiple Burgers vector be- dentation experiments have demonstrated that the defor- come increasingly energetically favourable as a function β β β mation behaviour of a wide variety of layered materials of extra material, as jb1+b2j < jb1j +jb2j . While this proceeds not through the basal dislocation, but through sublinearity has been well-established, there is reasonable a distinct and reversible mechanism, which has been at- variation in the literature with reported values lying in tributed to the formation of ripplocations [5]. Reversible the range β ≈ 0:3 − 0:45 [3, 22, 23]. Additionally, while arrays of ripplocation boundaries which can evolve into there have been computational studies of ripplocations, kink bands under increasing damage are believed to con- no rigorous comparison has been made between them and stitute the initial states of material failure in layered ma- the corresponding dislocation cores. terials. Ripplocations are now believed to occur on a vari- In this work, we have applied analytical and computa- ety of length scales, accounting for material deformation tional techniques which accurately model the interlayer in substances as diverse as playing cards and steel sheets arXiv:2012.08007v2 [cond-mat.mtrl-sci] 24 Mar 2021 friction between van der Waals layers to calculate the en- to phyllosilicates in the lithosphere [6{8]. Additionally, ergetic and structural scaling factors of single- and multi- surface wrinkles on homogeneous substrates necessarily layer surface and bulk ripplocations. In van der Waals have edge dislocation character below a critical length materials the interlayer friction is encapsulated in the [9], hence the study of ripplocations will also give fur- γ-surface energy to slide adjacent layers along different ther insight into the wrinkling behaviour of 2D materials, crystallographic directions [24{27]. This is essential in accurately modelling these defects, as it is the resistance to sliding against adjacent layers that stabilises basal dis- locations & ripplocations. Our simulations of dislocation ∗ [email protected] pile-ups in large systems demonstrate that the locally 2 a) 2.50 b) 2.0 c) 2.0 0.65 0.63 0.64 Gr (E∝n0.41) hBN (E∝n0.37) MoS (E∝n0.38) Gr (w∝n0.27) hBN (w∝n0.26) Gr-Cu (w∝n0.29) Gr (h∝n ) hBN (h∝n ) Gr-Cu (h∝n ) 2.25 2 2.00 1.5 1.5 1.75 1.50 1.25 1.0 1.0 [eV/A] f 1.00 E Width [nm] 0.75 Height [nm] 0.5 0.5 0.50 0.25 0.00 0.0 0.0 0 1 2 3 4 0 1 2 3 4 0 1 2 3 4 n [extra units of material] n [extra units of material] n [extra units of material] d) AB AB ] height length + n, n = 1,2,3,4 � thickness width [ [ ] FIG. 1.� (a) Formation energy of ripplocations in epitaxial graphene, MoS2 and hBN sheets vs amount of additional material n. (b) Width and (c) Height of ripplocations on epitaxial graphene on graphene, hBN on hBN and graphene on the Cu(100) surface (d) Schematic depiction of ripplocation configurations and associated structural properties as they have been calculated in this work. buckled ripplocation structure is the preferred mode of crystallographic orientation. Atoms in the top layer are deformation with increasing additional material in the allowed to fully relax, while the bottom layer is held fixed pile-up. by setting all forces to zero, to approximate a compressed monolayer on a substrate. This approach has been veri- Methods. | Density Functional Theory (DFT) calcu- fied in comparison to a fully-relaxed, multilayer graphite lations have been performed using plane-wave basis Kohn substrate using MD calculations, which produces very Sham states as implemented in the Quantum Espresso similar qualitative behaviour, with a small quantitative package [28, 29]. We have employed Vanderbilt ultra- difference which we attribute to relaxation of the multi- soft pseudopotentials parameterised according to the Lo- layer substrate (for more details see Fig. S3-S4). cal Density Approximation (LDA). While it is often as- The amount of additional material is quantified using sumed that the inclusion of gradient terms in the Gen- the parameter n, denoting a Burgers vector of multiple eralised Gradient Approximation (GGA) makes it a bet- lattice translations. Along the zigzag direction this cor- ter approximation than the simpler LDA, in some cases responds to an edge dislocation (n = 1) or superdislo- LDA performs significantly better than GGA. Notably, cation (n > 1), b = n × [1210]. Along the armchair the LDA provides a more accurate approximation to the zz direction b = n × [1100], and all edge dislocations are interlayer van der Waals interaction in comparison to the ac superdislocations. Thus, n quantifies the number of edge GGA [30], when benchmarked against higher levels of dislocations in the superdislocation pile-up, and is the theory such as Quantum Monte Carlo (QMC) calcula- characteristic property of a ripplocation defect. tion. [31, 32] Electronic wave-functions were expanded DFT structural relaxations have been performed for in a plane-wave basis with cut-offs of Ecut = 40 Ry.A Γ-centred 1 × 5 × 1 k-point grid is found to sample the zigzag surface ripplocations, b = n × [1210] in graphene, Brillouin zone with sufficient accuracy, giving total en- hexagonal boron nitride (hBN) and MoS2. While the ergy convergence to within 0:1 meV/atom for all struc- initial configuration is that of a superdislocation, with tures. Molecular dynamics (MD) simulations have been a well-defined Burgers vector, upon relaxation the large performed in LAMMPS [33], using the hybrid neural net- initial in-plane strains are released by out of plane buck- work (hNN) potential for multilayer graphene systems ling. This gives close to equilibrium bond lengths across developed by Wen and Tadmor [34]. We have taken care the ripplocation (see Fig. S5-S6), and prior work has to assess the suitability of the hNN potential and a vari- suggested that ripplocations do not possess a long range ety of interlayer potentials in capturing the behaviour of Burgers vector [3, 22]. dislocations and ripplocations (for additional details see Formation energies Ef have been calculated from the Fig. S1-S2). optimised

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