SHE - Hall Effect in Semiconductor Physics 111B: Advanced Experimentation Laboratory University of California, Berkeley
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Week 10: Oct 27, 2016 Preamble to Quantum Hall Effect: Exotic
Week 10: Oct 27, 2016 Preamble to Quantum Hall Effect: Exotic Phenomenon in Quantum Physics The quantum Hall effect is one of the most remarkable of all quantum-matter phenomena, quite unanticipated by the physics community at the time of its discovery in 1980. This very surprising discovery earned von Klitzing the Nobel Prize in physics in 1985. The basic experimental observation is the quantization of resistance, in two-dimensional systems, to an extreme precision, irrespective of the sample’s shape and of its degree of purity. This intriguing phenomenon is a manifestation of quantum mechanics on a macroscopic scale, and for that reason, it rivals superconductivity and Bose–Einstein condensation in its fundamental importance. As we will see later in this class, that this effect is an example of Berry phase and the “quanta” that appear in the quantization of Hall conductivity are the topological integers that emerge from quantum analog of Gauss-Bonnet theorem. This years Nobel prize to David Thouless is for explaining this exotic quantization in terms of topology. It turns out that the classical and quantum anholonomy are described by the same mathematics. To understand that, we need to introduce the concept of “curvature. As we know, it is the curved space that leads to anholonomy in classical physics. This allows us to define curvature in quantum physics. That is, using the concept of anholonomy in quantum physics, we can define the concept of curvature in quantum physics – that is, in Hilbert space. Curvature leads us to Topological Invariants that tells us that anholonomy may have its roots in topology. -
Determination of Fabric Surface Resistance by Van Der Pauw Method in Case of Contacts Distant from the Sample Edge
AUTEX Research Journal, Vol. 14, No 2, June 2014, DOI: 10.2478/v10304-012-0050-4 © AUTEX DETERMINATION OF FABRIC SURFACE RESISTANCE BY VAN DER PAUW METHOD IN CASE OF CONTACTS DISTANT FROM THE SAMPLE EDGE Magdalena Tokarska Department of Architecture of Textiles, Lodz University of Technology, 116 Zeromskiego St., 90-924 Lodz Poland E-mail: [email protected] Abstract: The van der Pauw method can be used to determine the electroconductive properties of textile materials. However, the sample surface resistance can be determined provided that the sample has characteristics typical for the van der Pauw structure. In the paper, a method of evaluating the sample structure is shown. The selected electroconductive woven fabrics are used as an example of van der Pauw structure. An analysis of impact of electrodes placement on the resistance measurements was conducted. Knowing how the resistance of the sample varies with the electrodes distance from the edge, the samples’ surface resistances were calculated in cases when the electrodes are placed at the sample edge. An uncertainty analysis of the samples’ surface resistances was conducted based on the Monte Carlo method. Keywords: Electroconductive properties, woven fabric, van der Pauw structure, van der Pauw method, surface resistance, electrodes placement, Monte Carlo method 1. Introduction of the sample. The effect of electrode placement on resistance measurement was investigated [8,10,14]. In the case of the The van der Pauw method was developed to determine the woven fabrics, the contacts should not be too close to the properties of thin semiconductors [1,2]. This method is currently boundaries of the sample because errors can be introduced used to evaluate the conductivity of thin layers deposited on [3,15]. -
Topological Insulators Physicsworld.Com Topological Insulators This Newly Discovered Phase of Matter Has Become One of the Hottest Topics in Condensed-Matter Physics
Feature: Topological insulators physicsworld.com Topological insulators This newly discovered phase of matter has become one of the hottest topics in condensed-matter physics. It is hard to understand – there is no denying it – but take a deep breath, as Charles Kane and Joel Moore are here to explain what all the fuss is about Charles Kane is a As anyone with a healthy fear of sticking their fingers celebrated by the 2010 Nobel prize – that inspired these professor of physics into a plug socket will know, the behaviour of electrons new ideas about topology. at the University of in different materials varies dramatically. The first But only when topological insulators were discov- Pennsylvania. “electronic phases” of matter to be defined were the ered experimentally in 2007 did the attention of the Joel Moore is an electrical conductor and insulator, and then came the condensed-matter-physics community become firmly associate professor semiconductor, the magnet and more exotic phases focused on this new class of materials. A related topo- of physics at University of such as the superconductor. Recent work has, how- logical property known as the quantum Hall effect had California, Berkeley ever, now uncovered a new electronic phase called a already been found in 2D ribbons in the early 1980s, and a faculty scientist topological insulator. Putting the name to one side for but the discovery of the first example of a 3D topologi- at the Lawrence now, the meaning of which will become clear later, cal phase reignited that earlier interest. Given that the Berkeley National what is really getting everyone excited is the behaviour 3D topological insulators are fairly standard bulk semi- Laboratory, of materials in this phase. -
Appendix a Hall Effect Measurements
Lake Shore 7500/9500 Series Hall System Users Manual APPENDIX A HALL EFFECT MEASUREMENTS Contents: A.1 GENERAL..................................................................................................................................... A-2 A.2 HALL EFFECT MEASUREMENT THEORY................................................................................. A-2 A.3 SAMPLE GEOMETRIES & MEASUREMENTS SUPPORTED BY HALL SOFTWARE .............. A-5 A.3.1 System of Units ...................................................................................................................... A-5 A.3.2 Nomenclature......................................................................................................................... A-5 A.3.3 Van der Pauw Measurements................................................................................................ A-6 A.3.4 Hall Bar Measurements.......................................................................................................... A-8 A.3.4.1 Six-contact 1-2-2-1 Hall Bar............................................................................................... A-8 A.3.4.2 Six-contact 1-3-1-1 Hall Bar............................................................................................. A-10 A.3.4.3 Eight-contact 1-3-3-1 Hall Bar ......................................................................................... A-11 A.4 COMPARISON TO ASTM STANDARD ..................................................................................... A-13 A.5 SOURCES OF MEASUREMENT -
Electrical Resistivity Measurement of Carbon Anodes Using the Van Der Pauw Method
metals Article Electrical Resistivity Measurement of Carbon Anodes Using the Van der Pauw Method Geoffroy Rouget 1,2, Hicham Chaouki 2, Donald Picard 2, Donald Ziegler 3 and Houshang Alamdari 1,2,* 1 Department of Mining, Metallurgical and Materials Engineering, Laval University, Quebec, QC G1V0A6, Canada; [email protected] 2 NSERC/Alcoa Industrial Research Chair MACE and Aluminum Research Center, Laval University, Quebec, QC G1V0A6, Canada; [email protected] (H.C.); [email protected] (D.P.) 3 Alcoa Primary Metals, Alcoa Technical Centre, 859 White Cloud Road, New Kensington, PA 15068, USA; [email protected] * Correspondence: [email protected]; Tel.: +1-418-656-7666 Received: 27 July 2017; Accepted: 8 September 2017; Published: 13 September 2017 Abstract: The electrical resistivity of carbon anodes is an important parameter in the overall efficiency of the aluminum smelting process. The aim of this work is to explore the Van der Pauw (VdP) method as an alternative technique to the standard method, which is commonly used in the aluminum industry, in order to characterize the electrical resistivity of carbon anodes and to assess the accuracy of the method. For this purpose, a cylindrical core is extracted from the top of the anodes. The electrical resistivity of the core samples is measured according to the ISO 11713 standard method. This method consists of applying a 1 A current along the revolution axis of the sample, and then measuring the voltage drop on its side, along the same direction. Theoretically, this technique appears to be satisfying, but cracks in the sample that are generated either during the anode production or while coring the sample may induce high variations in the measured signal. -
Understanding & Applying Hall Effect Sensor Datasheets
Application Report SLIA086 – July 2014 Understanding & Applying Hall Effect Sensor Datasheets Ross Eisenbeis Motor Drive Business Unit ABSTRACT Hall effect sensors measure magnetic fields, and their datasheet parameters can initially be difficult to understand and apply toward system design. This article provides a baseline of information. Units A magnet produces a magnetic field that travels from the North pole to the South pole. The total amount of field through a 2-dimensional slice is the “flux”, in units of weber. Webers per square meter describes flux density, in units of tesla (T). The unit of gauss (G) also describes flux density, where 1 T = 10000 G. In millitesla, 1 mT = 10 G. Tesla is the official SI unit, and it’s used by TI datasheets, but many other sources use gauss. Practical Concepts The closer you are to a magnet, the higher the flux density. The flux density at the surface of the magnet depends on its material and the magnetization amount. Typical magnets have surface fields between 40 to 600 mT. At a given distance, physically large magnets project a larger flux density. Polarity The symbol “B” is used for flux density. TI Hall sensors use the convention that magnetic fields traveling from the bottom of the device through the top are “positive B”, and fields traveling from the top to the bottom of the device are “negative B”. Only the perpendicular vector component of the magnetic field is sensed by the internal element. N S S N B > 0 mT B < 0 mT Figure 1. Polarity of field directions 1 Digital Hall Sensor Functionality Digital Hall Sensor Functionality Digital Hall sensors have an open-drain output that pulls Low if B exceeds the threshold BOP (the Operate Point). -
Hall Effect Metamaterials: Guiding Fields in the Unit Cell
Hall effect metamaterials: guiding fields in the unit cell Marc Briane, Rennes, France Christian Kern, KIT, Germany Muamer Kadic, FEMTO-ST, France Graeme Milton, University of Utah Martin Wegener, KIT, Germany Group of Martin Wegener Group of Julia Greer Wegener (2018): Metamaterials are rationally designed composites made of tailored building blocks or unit cells, which are composed of one or more constituent bulk materials. The metamaterial properties go beyond those of the ingredient materials – qualitatively or quantitatively. With an addition: ….The properties of the metamaterial can be mapped onto effective-medium parameters Metamaterials are not new: -Dispersions of metallic particles for optical effects in stained glasses (Maxwell-Garnett, 1904 ) -Bubbly fluids for absorbing sound (masking submarine prop. noise) -Split ring resonators for artificial magnetic permeability (Schelkunoff and Friis, 1952) -Wire metamaterials with artificial electric permittivity (Brown, 1953) -Metamaterials with negative and anisotropic mass densities (Auriault and Bonnet, 1985, 1994) -Metamaterials with negative Poisson’s ratio (Lakes 1987, Milton 1992) What is new is the unprecedented ability to tailor-make structures the explosion of interest, and the variety of emerging novel directions. One can get a similar effect for poroelasticity Qu, et.al 2017 New classes of elastic materials (with Cherkaev, 1995) Like a fluid it only supports one loading, unlike a fluid that loading may be anisotropic. Desired support of a given anisotropic loading is achieved by moving P to another position in the unit cell. KEY POINT is the coordination number of 4 at each vertex: the tension in one double cone connector, by balance of forces, determines uniquely the tension in the other 3 connecting double cones, and by induction the entire average stress field in the material. -
Application Information Hall-Effect IC Applications Guide
Application Information Hall-Effect IC Applications Guide Allegro™ MicroSystems uses the latest integrated circuit Sensitive Circuits for Rugged Service technology in combination with the century-old Hall The Hall-effect sensor IC is virtually immune to environ- effect to produce Hall-effect ICs. These are contactless, mental contaminants and is suitable for use under severe magnetically activated switches and sensor ICs with the service conditions. The circuit is very sensitive and provides potential to simplify and improve electrical and mechanical reliable, repetitive operation in close-tolerance applications. systems. Applications Low-Cost Simplified Switching Applications for Hall-effect ICs include use in ignition sys- Simplified switching is a Hall sensor IC strong point. Hall- tems, speed controls, security systems, alignment controls, effect IC switches combine Hall voltage generators, signal micrometers, mechanical limit switches, computers, print- amplifiers, Schmitt trigger circuits, and transistor output cir- ers, disk drives, keyboards, machine tools, key switches, cuits on a single integrated circuit chip. The output is clean, and pushbutton switches. They are also used as tachometer fast, and switched without bounce (an inherent problem with pickups, current limit switches, position detectors, selec- mechanical switches). A Hall-effect switch typically oper- tor switches, current sensors, linear potentiometers, rotary ates at up to a 100 kHz repetition rate, and costs less than encoders, and brushless DC motor commutators. many common electromechanical switches. The Hall Effect: How Does It Work? Efficient, Effective, Low-Cost Linear Sensor ICs The basic Hall element is a small sheet of semiconductor The linear Hall-effect sensor IC detects the motion, position, material, referred to as the Hall element, or active area, or change in field strength of an electromagnet, a perma- represented in figure 1. -
Quantum Hall Effect
Preprint typeset in JHEP style - HYPER VERSION January 2016 The Quantum Hall Effect TIFR Infosys Lectures David Tong Department of Applied Mathematics and Theoretical Physics, Centre for Mathematical Sciences, Wilberforce Road, Cambridge, CB3 OBA, UK http://www.damtp.cam.ac.uk/user/tong/qhe.html [email protected] arXiv:1606.06687v2 [hep-th] 20 Sep 2016 –1– Abstract: There are surprisingly few dedicated books on the quantum Hall effect. Two prominent ones are Prange and Girvin, “The Quantum Hall Effect” • This is a collection of articles by most of the main players circa 1990. The basics are described well but there’s nothing about Chern-Simons theories or the importance of the edge modes. J. K. Jain, “Composite Fermions” • As the title suggests, this book focuses on the composite fermion approach as a lens through which to view all aspects of the quantum Hall effect. It has many good explanations but doesn’t cover the more field theoretic aspects of the subject. There are also a number of good multi-purpose condensed matter textbooks which contain extensive descriptions of the quantum Hall effect. Two, in particular, stand out: Eduardo Fradkin, Field Theories of Condensed Matter Physics • Xiao-Gang Wen, Quantum Field Theory of Many-Body Systems: From the Origin • of Sound to an Origin of Light and Electrons Several excellent lecture notes covering the various topics discussed in these lec- tures are available on the web. Links can be found on the course webpage: http://www.damtp.cam.ac.uk/user/tong/qhe.html. Contents 1. The Basics 5 1.1 Introduction 5 1.2 The Classical Hall Effect 6 1.2.1 Classical Motion in a Magnetic Field 6 1.2.2 The Drude Model 7 1.3 Quantum Hall Effects 10 1.3.1 Integer Quantum Hall Effect 11 1.3.2 Fractional Quantum Hall Effect 13 1.4 Landau Levels 14 1.4.1 Landau Gauge 18 1.4.2 Turning on an Electric Field 21 1.4.3 Symmetric Gauge 22 1.5 Berry Phase 27 1.5.1 Abelian Berry Phase and Berry Connection 28 1.5.2 An Example: A Spin in a Magnetic Field 32 1.5.3 Particles Moving Around a Flux Tube 35 1.5.4 Non-Abelian Berry Connection 38 2. -
Magnetic Fields, Hall Effect and Electromagnetic Induction
Magnetic Fields, Hall e®ect and Electromagnetic induction (Electricity and Magnetism) Umer Hassan, Wasif Zia and Sabieh Anwar LUMS School of Science and Engineering May 18, 2009 Why does a magnet rotate a current carrying loop placed close to it? Why does the secondary winding of a transformer carry a current when it is not connected to a voltage source? How does a bicycle dynamo work? How does the Mangla Power House generate electricity? Let's ¯nd out the answers to some of these questions with a simple experiment. KEYWORDS Faraday's Law ¢ Magnetic Field ¢ Magnetic Flux ¢ Induced EMF ¢ Magnetic Dipole Moment ¢ Hall Sensor ¢ Solenoid APPROXIMATE PERFORMANCE TIME 4 hours 1 Conceptual Objectives In this experiment, we will, 1. understand one of the fundamental laws of electromagnetism, 2. understand the meaning of magnetic ¯elds, flux, solenoids, magnets and electromagnetic induction, 3. appreciate the working of magnetic data storage, such as in hard disks, and 4. interpret the physical meaning of di®erentiation and integration. 2 Experimental Objectives The experimental objective is to use a Hall sensor and to ¯nd the ¯eld and magnetization of a magnet. We will also gain practical knowledge of, 1. magnetic ¯eld transducers, 2. hard disk operation and data storage, 3. visually and analytically determining the relationship between induced EMF and magnetic flux, and 4. indirect measurement of the speed of a motor. 1 3 The Magnetic Field B and Flux © The magnetic ¯eld exists when we have moving electric charges. About 150 years ago, physicists found that, unlike the electric ¯eld, which is present even when the charge is not moving, the magnetic ¯eld is produced only when the charge moves. -
Determination of the Riemann Modulus and Sheet Resistance of a Sample with a Hole by the Van Der Pauw Method
January 8, 2015 Determination of the Riemann modulus and sheet resistance of a sample with a hole by the van der Pauw method K. Szyma ński, K. Łapi ński and J. L. Cie śli ński University of Białystok, Faculty of Physics, K. Ciołkowskiego Street 1L, 15-245 Białystok, Poland The van der Pauw method for two-dimensional samples of arbitrary shape with an isolated hole is considered. Correlations between extreme values of the resistances allow one to determine the specific resistivity of the sample and the dimensionless parameter related to the geometry of the isolated hole, known as the Riemann modulus. The parameter is invariant under conformal mappings. Experimental verification of the method is presented. I. Introduction Determination of direct relations between geometrical size or shape of the sample and electrical quantities is of particular importance as new measurement techniques may appear or the experimental accuracy can be increased. As an example, we indicate a particular class of capacitors in which cross-capacitance per unit length is independent of their cross- sectional dimension [1]. Development of this class of capacitors leads to a new realization of the unit of capacitance and the unit of resistance [2-4]. The second example is the famous van der Pauw method of measuring the resistivity of a two- dimensional, isotropic sample with four contacts located at its edge [5,6]. The power of the method lies in its ability to measure the resistances with four contacts located at arbitrarily located point on the edge of a uniform sample. The result of the measurement is sheet resistance, i.e., the ratio of specific resistivity and thickness. -
Measuring and Reporting Electrical Conductivity in Metal–Organic Frameworks: Cd
Measuring and Reporting Electrical Conductivity in Metal–Organic Frameworks: Cd The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Sun, Lei et al. “Measuring and Reporting Electrical Conductivity in Metal–Organic Frameworks: Cd2(TTFTB) as a Case Study.” Journal of the American Chemical Society 138, 44 (November 2016): 14772– 14782 © 2016 American Chemical Society As Published http://dx.doi.org/10.1021/jacs.6b09345 Publisher American Chemical Society (ACS) Version Author's final manuscript Citable link http://hdl.handle.net/1721.1/115124 Terms of Use Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. Measuring and Reporting Electrical Conductivity in Metal-Organic Frameworks: Cd2(TTFTB) as a Case Study Lei Sun, Sarah S. Park, Dennis Sheberla, and Mircea Dincă* Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States ABSTRACT: Electrically conductive metal-organic frameworks (MOFs) are emerging as a subclass of porous materials that can have a transformative effect on electronic and renewable energy devices. Systematic advances in these materials depend critically on the accurate and reproducible characterization of their electrical properties. This is made difficult by the numerous techniques avail- able for electrical measurements and the dependence of metrics on device architecture and numerous external variables. These chal- lenges, common to all types of electronic materials and devices, are especially acute for porous materials, whose high surface area make them even more susceptible to interactions with contaminants in the environment.