Topological Insulators Physicsworld.Com Topological Insulators This Newly Discovered Phase of Matter Has Become One of the Hottest Topics in Condensed-Matter Physics
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Week 10: Oct 27, 2016 Preamble to Quantum Hall Effect: Exotic
Week 10: Oct 27, 2016 Preamble to Quantum Hall Effect: Exotic Phenomenon in Quantum Physics The quantum Hall effect is one of the most remarkable of all quantum-matter phenomena, quite unanticipated by the physics community at the time of its discovery in 1980. This very surprising discovery earned von Klitzing the Nobel Prize in physics in 1985. The basic experimental observation is the quantization of resistance, in two-dimensional systems, to an extreme precision, irrespective of the sample’s shape and of its degree of purity. This intriguing phenomenon is a manifestation of quantum mechanics on a macroscopic scale, and for that reason, it rivals superconductivity and Bose–Einstein condensation in its fundamental importance. As we will see later in this class, that this effect is an example of Berry phase and the “quanta” that appear in the quantization of Hall conductivity are the topological integers that emerge from quantum analog of Gauss-Bonnet theorem. This years Nobel prize to David Thouless is for explaining this exotic quantization in terms of topology. It turns out that the classical and quantum anholonomy are described by the same mathematics. To understand that, we need to introduce the concept of “curvature. As we know, it is the curved space that leads to anholonomy in classical physics. This allows us to define curvature in quantum physics. That is, using the concept of anholonomy in quantum physics, we can define the concept of curvature in quantum physics – that is, in Hilbert space. Curvature leads us to Topological Invariants that tells us that anholonomy may have its roots in topology. -
Edge States in Topological Magnon Insulators
PHYSICAL REVIEW B 90, 024412 (2014) Edge states in topological magnon insulators Alexander Mook,1 Jurgen¨ Henk,2 and Ingrid Mertig1,2 1Max-Planck-Institut fur¨ Mikrostrukturphysik, D-06120 Halle (Saale), Germany 2Institut fur¨ Physik, Martin-Luther-Universitat¨ Halle-Wittenberg, D-06099 Halle (Saale), Germany (Received 15 May 2014; revised manuscript received 27 June 2014; published 18 July 2014) For magnons, the Dzyaloshinskii-Moriya interaction accounts for spin-orbit interaction and causes a nontrivial topology that allows for topological magnon insulators. In this theoretical investigation we present the bulk- boundary correspondence for magnonic kagome lattices by studying the edge magnons calculated by a Green function renormalization technique. Our analysis explains the sign of the transverse thermal conductivity of the magnon Hall effect in terms of topological edge modes and their propagation direction. The hybridization of topologically trivial with nontrivial edge modes enlarges the period in reciprocal space of the latter, which is explained by the topology of the involved modes. DOI: 10.1103/PhysRevB.90.024412 PACS number(s): 66.70.−f, 75.30.−m, 75.47.−m, 85.75.−d I. INTRODUCTION modes causes a doubling of the period of the latter in reciprocal space. Understanding the physics of electronic topological in- The paper is organized as follows. In Sec. II we sketch the sulators has developed enormously over the past 30 years: quantum-mechanical description of magnons in kagome lat- spin-orbit interaction induces band inversions and, thus, yields tices (Sec. II A), Berry curvature and Chern number (Sec. II B), nonzero topological invariants as well as edge states that are and the Green function renormalization method for calculating protected by symmetry [1–3]. -
On the Topological Immunity of Corner States in Two-Dimensional Crystalline Insulators ✉ Guido Van Miert1 and Carmine Ortix 1,2
www.nature.com/npjquantmats ARTICLE OPEN On the topological immunity of corner states in two-dimensional crystalline insulators ✉ Guido van Miert1 and Carmine Ortix 1,2 A higher-order topological insulator (HOTI) in two dimensions is an insulator without metallic edge states but with robust zero- dimensional topological boundary modes localized at its corners. Yet, these corner modes do not carry a clear signature of their topology as they lack the anomalous nature of helical or chiral boundary states. Here, we demonstrate using immunity tests that the corner modes found in the breathing kagome lattice represent a prime example of a mistaken identity. Contrary to previous theoretical and experimental claims, we show that these corner modes are inherently fragile: the kagome lattice does not realize a higher-order topological insulator. We support this finding by introducing a criterion based on a corner charge-mode correspondence for the presence of topological midgap corner modes in n-fold rotational symmetric chiral insulators that explicitly precludes the existence of a HOTI protected by a threefold rotational symmetry. npj Quantum Materials (2020) 5:63 ; https://doi.org/10.1038/s41535-020-00265-7 INTRODUCTION a manifestation of the crystalline topology of the D − 1 edge 1234567890():,; Topology and geometry find many applications in contemporary rather than of the bulk: the corresponding insulating phases have physics, ranging from anomalies in gauge theories to string been recently dubbed as boundary-obstructed topological 38 theory. In condensed matter physics, topology is used to classify phases and do not represent genuine (higher-order) topological defects in nematic crystals, characterize magnetic skyrmions, and phases. -
Topological Insulators: Electronic Structure, Material Systems and Its Applications
Network for Computational Nanotechnology UC Berkeley, Univ. of Illinois, Norfolk(NCN) State, Northwestern, Purdue, UTEP Topological Insulators: Electronic structure, material systems and its applications Parijat Sengupta Network for Computational Nanotechnology Electrical and Computer Engineering Purdue University Complete set of slides from my final PhD defense Advisor : Prof. Gerhard Klimeck A new addition to the metal-insulator classification Nature, Vol. 464, 11 March, 2010 Surface states Metal Trivial Insulator Topological Insulator 2 2 Tracing the roots of topological insulator The Hall effect of 1869 is a start point How does the Hall resistance behave for a 2D set-up under low temperature and high magnetic field (The Quantum Hall Effect) ? 3 The Quantum Hall Plateau ne2 = σ xy h h = 26kΩ e2 Hall Conductance is quantized B Cyclotron motion Landau Levels eB E = ω (n + 1 ), ω = , n = 0,1,2,... n c 2 c mc 4 Plateau and the edge states Ext. B field Landau Levels Skipping orbits along the edge Skipping orbits induce a gapless edge mode along the sample boundary Question: Are edge states possible without external B field ? 5 Is there a crystal attribute that can substitute an external B field Spin orbit Interaction : Internal B field 1. Momentum dependent force, analogous to B field 2. Opposite force for opposite spins 3. Energy ± µ B depends on electronic spin 4. Spin-orbit strongly enhanced for atoms of large atomic number Fundamental difference lies under a Time Reversal Symmetric Operation Time Reversal Symmetry Violation 1. Quantum -
Understanding & Applying Hall Effect Sensor Datasheets
Application Report SLIA086 – July 2014 Understanding & Applying Hall Effect Sensor Datasheets Ross Eisenbeis Motor Drive Business Unit ABSTRACT Hall effect sensors measure magnetic fields, and their datasheet parameters can initially be difficult to understand and apply toward system design. This article provides a baseline of information. Units A magnet produces a magnetic field that travels from the North pole to the South pole. The total amount of field through a 2-dimensional slice is the “flux”, in units of weber. Webers per square meter describes flux density, in units of tesla (T). The unit of gauss (G) also describes flux density, where 1 T = 10000 G. In millitesla, 1 mT = 10 G. Tesla is the official SI unit, and it’s used by TI datasheets, but many other sources use gauss. Practical Concepts The closer you are to a magnet, the higher the flux density. The flux density at the surface of the magnet depends on its material and the magnetization amount. Typical magnets have surface fields between 40 to 600 mT. At a given distance, physically large magnets project a larger flux density. Polarity The symbol “B” is used for flux density. TI Hall sensors use the convention that magnetic fields traveling from the bottom of the device through the top are “positive B”, and fields traveling from the top to the bottom of the device are “negative B”. Only the perpendicular vector component of the magnetic field is sensed by the internal element. N S S N B > 0 mT B < 0 mT Figure 1. Polarity of field directions 1 Digital Hall Sensor Functionality Digital Hall Sensor Functionality Digital Hall sensors have an open-drain output that pulls Low if B exceeds the threshold BOP (the Operate Point). -
A Topological Insulator Surface Under Strong Coulomb, Magnetic and Disorder Perturbations
LETTERS PUBLISHED ONLINE: 12 DECEMBER 2010 | DOI: 10.1038/NPHYS1838 A topological insulator surface under strong Coulomb, magnetic and disorder perturbations L. Andrew Wray1,2,3, Su-Yang Xu1, Yuqi Xia1, David Hsieh1, Alexei V. Fedorov3, Yew San Hor4, Robert J. Cava4, Arun Bansil5, Hsin Lin5 and M. Zahid Hasan1,2,6* Topological insulators embody a state of bulk matter contact with large-moment ferromagnets and superconductors for characterized by spin-momentum-locked surface states that device applications11–17. The focus of this letter is the exploration span the bulk bandgap1–7. This highly unusual surface spin of topological insulator surface electron dynamics in the presence environment provides a rich ground for uncovering new of magnetic, charge and disorder perturbations from deposited phenomena4–24. Understanding the response of a topological iron on the surface. surface to strong Coulomb perturbations represents a frontier Bismuth selenide cleaves on the (111) selenium surface plane, in discovering the interacting and emergent many-body physics providing a homogeneous environment for deposited atoms. Iron of topological surfaces. Here we present the first controlled deposited on a Se2− surface is expected to form a mild chemical study of topological insulator surfaces under Coulomb and bond, occupying a large ionization state between 2C and 3C 25 magnetic perturbations. We have used time-resolved depo- with roughly 4 µB magnetic moment . As seen in Fig. 1d the sition of iron, with a large Coulomb charge and significant surface electronic structure after heavy iron deposition is greatly magnetic moment, to systematically modify the topological altered, showing that a significant change in the surface electronic spin structure of the Bi2Se3 surface. -
Hall Effect Metamaterials: Guiding Fields in the Unit Cell
Hall effect metamaterials: guiding fields in the unit cell Marc Briane, Rennes, France Christian Kern, KIT, Germany Muamer Kadic, FEMTO-ST, France Graeme Milton, University of Utah Martin Wegener, KIT, Germany Group of Martin Wegener Group of Julia Greer Wegener (2018): Metamaterials are rationally designed composites made of tailored building blocks or unit cells, which are composed of one or more constituent bulk materials. The metamaterial properties go beyond those of the ingredient materials – qualitatively or quantitatively. With an addition: ….The properties of the metamaterial can be mapped onto effective-medium parameters Metamaterials are not new: -Dispersions of metallic particles for optical effects in stained glasses (Maxwell-Garnett, 1904 ) -Bubbly fluids for absorbing sound (masking submarine prop. noise) -Split ring resonators for artificial magnetic permeability (Schelkunoff and Friis, 1952) -Wire metamaterials with artificial electric permittivity (Brown, 1953) -Metamaterials with negative and anisotropic mass densities (Auriault and Bonnet, 1985, 1994) -Metamaterials with negative Poisson’s ratio (Lakes 1987, Milton 1992) What is new is the unprecedented ability to tailor-make structures the explosion of interest, and the variety of emerging novel directions. One can get a similar effect for poroelasticity Qu, et.al 2017 New classes of elastic materials (with Cherkaev, 1995) Like a fluid it only supports one loading, unlike a fluid that loading may be anisotropic. Desired support of a given anisotropic loading is achieved by moving P to another position in the unit cell. KEY POINT is the coordination number of 4 at each vertex: the tension in one double cone connector, by balance of forces, determines uniquely the tension in the other 3 connecting double cones, and by induction the entire average stress field in the material. -
Topological Insulator Interfaced with Ferromagnetic Insulators: ${\Rm{B}}
PHYSICAL REVIEW MATERIALS 4, 064202 (2020) Topological insulator interfaced with ferromagnetic insulators: Bi2Te3 thin films on magnetite and iron garnets V. M. Pereira ,1 S. G. Altendorf,1 C. E. Liu,1 S. C. Liao,1 A. C. Komarek,1 M. Guo,2 H.-J. Lin,3 C. T. Chen,3 M. Hong,4 J. Kwo ,2 L. H. Tjeng ,1 and C. N. Wu 1,2,* 1Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany 2Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan 3National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan 4Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (Received 28 November 2019; revised manuscript received 17 March 2020; accepted 22 April 2020; published 3 June 2020) We report our study about the growth and characterization of Bi2Te3 thin films on top of Y3Fe5O12(111), Tm3Fe5O12(111), Fe3O4(111), and Fe3O4(100) single-crystal substrates. Using molecular-beam epitaxy, we were able to prepare the topological insulator/ferromagnetic insulator heterostructures with no or minimal chemical reaction at the interface. We observed the anomalous Hall effect on these heterostructures and also a suppression of the weak antilocalization in the magnetoresistance, indicating a topological surface-state gap opening induced by the magnetic proximity effect. However, we did not observe any obvious x-ray magnetic circular dichroism (XMCD) on the Te M45 edges. The results suggest that the ferromagnetism induced by the magnetic proximity effect via van der Waals bonding in Bi2Te3 is too weak to be detected by XMCD, but still can be observed by electrical transport measurements. -
Topological Insulator Materials for Advanced Optoelectronic Devices
Book Chapter for <<Advanced Topological Insulators>> Topological insulator materials for advanced optoelectronic devices Zengji Yue1,2*, Xiaolin Wang1,2 and Min Gu3 1Institute for Superconducting and Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500, Australia 2ARC Centre for Future Low-Energy Electronics Technologies, Australia 3Laboratory of Artificial-Intelligence Nanophotonics, School of Science, RMIT University, Melbourne, Victoria 3001, Australia *Corresponding email: [email protected] Abstract Topological insulators are quantum materials that have an insulating bulk state and a topologically protected metallic surface state with spin and momentum helical locking and a Dirac-like band structure.(1-3) Unique and fascinating electronic properties, such as the quantum spin Hall effect, topological magnetoelectric effects, magnetic monopole image, and Majorana fermions, are expected from topological insulator materials.(4, 5) Thus topological insulator materials have great potential applications in spintronics and quantum information processing, as well as magnetoelectric devices with higher efficiency.(6, 7) Three-dimensional (3D) topological insulators are associated with gapless surface states, and two-dimensional (2D) topological insulators with gapless edge states.(8) The topological surface (edge) states have been mainly investigated by first-principle theoretical calculation, electronic transport, angle- resolved photoemission spectroscopy (ARPES), and scanning tunneling microscopy (STM).(9) A variety of compounds have been identified as 2D or 3D topological insulators, including HgTe/CdTe, Bi2Se3, Bi2Te3, Sb2Te3, SmB6, BiTeCl, Bi1.5Sb0.5Te1.8Se1.2, and so on.(9-12) On the other hand, topological insulator materials also exhibit a number of excellent optical properties, including Kerr and Faraday rotation, ultrahigh bulk refractive index, near-infrared frequency transparency, unusual electromagnetic scattering and ultra-broadband surface plasmon resonances. -
Application Information Hall-Effect IC Applications Guide
Application Information Hall-Effect IC Applications Guide Allegro™ MicroSystems uses the latest integrated circuit Sensitive Circuits for Rugged Service technology in combination with the century-old Hall The Hall-effect sensor IC is virtually immune to environ- effect to produce Hall-effect ICs. These are contactless, mental contaminants and is suitable for use under severe magnetically activated switches and sensor ICs with the service conditions. The circuit is very sensitive and provides potential to simplify and improve electrical and mechanical reliable, repetitive operation in close-tolerance applications. systems. Applications Low-Cost Simplified Switching Applications for Hall-effect ICs include use in ignition sys- Simplified switching is a Hall sensor IC strong point. Hall- tems, speed controls, security systems, alignment controls, effect IC switches combine Hall voltage generators, signal micrometers, mechanical limit switches, computers, print- amplifiers, Schmitt trigger circuits, and transistor output cir- ers, disk drives, keyboards, machine tools, key switches, cuits on a single integrated circuit chip. The output is clean, and pushbutton switches. They are also used as tachometer fast, and switched without bounce (an inherent problem with pickups, current limit switches, position detectors, selec- mechanical switches). A Hall-effect switch typically oper- tor switches, current sensors, linear potentiometers, rotary ates at up to a 100 kHz repetition rate, and costs less than encoders, and brushless DC motor commutators. many common electromechanical switches. The Hall Effect: How Does It Work? Efficient, Effective, Low-Cost Linear Sensor ICs The basic Hall element is a small sheet of semiconductor The linear Hall-effect sensor IC detects the motion, position, material, referred to as the Hall element, or active area, or change in field strength of an electromagnet, a perma- represented in figure 1. -
Room Temperature Magnetization Switching in Topological Insulator
Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques Yi Wang1*, Dapeng Zhu1*, Yang Wu1, Yumeng Yang1, Jiawei Yu1, Rajagopalan Ramaswamy1, Rahul Mishra1, Shuyuan Shi1,2, Mehrdad Elyasi1, Kie-Leong Teo1, Yihong Wu1, and Hyunsoo Yang1,2 1Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore 2Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore *These authors contributed equally to this work. Correspondence and requests for materials should be addressed to H.Y. (email: [email protected]). Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely reported in a Cr doped TI at 1.9 K. Here, we directly show giant SOT driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of ~1–1.75 in the thin TI films, where the TSS is dominant. In addition, we find the current density required for the magnetization switching is extremely low, ~6×105 A cm–2, which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3d ferromagnet using Bi2Se3 may lead to potential innovations in TI based spintronic applications. 1 The spin currents generated by charge currents via the spin Hall effect1-4 and/or Rashba-Edelstein effect5,6 can exert spin-orbit torques (SOTs) on the adjacent FM layer and result in the current induced magnetization switching. -
Quantum Hall Effect
Preprint typeset in JHEP style - HYPER VERSION January 2016 The Quantum Hall Effect TIFR Infosys Lectures David Tong Department of Applied Mathematics and Theoretical Physics, Centre for Mathematical Sciences, Wilberforce Road, Cambridge, CB3 OBA, UK http://www.damtp.cam.ac.uk/user/tong/qhe.html [email protected] arXiv:1606.06687v2 [hep-th] 20 Sep 2016 –1– Abstract: There are surprisingly few dedicated books on the quantum Hall effect. Two prominent ones are Prange and Girvin, “The Quantum Hall Effect” • This is a collection of articles by most of the main players circa 1990. The basics are described well but there’s nothing about Chern-Simons theories or the importance of the edge modes. J. K. Jain, “Composite Fermions” • As the title suggests, this book focuses on the composite fermion approach as a lens through which to view all aspects of the quantum Hall effect. It has many good explanations but doesn’t cover the more field theoretic aspects of the subject. There are also a number of good multi-purpose condensed matter textbooks which contain extensive descriptions of the quantum Hall effect. Two, in particular, stand out: Eduardo Fradkin, Field Theories of Condensed Matter Physics • Xiao-Gang Wen, Quantum Field Theory of Many-Body Systems: From the Origin • of Sound to an Origin of Light and Electrons Several excellent lecture notes covering the various topics discussed in these lec- tures are available on the web. Links can be found on the course webpage: http://www.damtp.cam.ac.uk/user/tong/qhe.html. Contents 1. The Basics 5 1.1 Introduction 5 1.2 The Classical Hall Effect 6 1.2.1 Classical Motion in a Magnetic Field 6 1.2.2 The Drude Model 7 1.3 Quantum Hall Effects 10 1.3.1 Integer Quantum Hall Effect 11 1.3.2 Fractional Quantum Hall Effect 13 1.4 Landau Levels 14 1.4.1 Landau Gauge 18 1.4.2 Turning on an Electric Field 21 1.4.3 Symmetric Gauge 22 1.5 Berry Phase 27 1.5.1 Abelian Berry Phase and Berry Connection 28 1.5.2 An Example: A Spin in a Magnetic Field 32 1.5.3 Particles Moving Around a Flux Tube 35 1.5.4 Non-Abelian Berry Connection 38 2.