Overview of Microstrip Antennas
David R. Jackson Dept. of ECE University of Houston Overview of Microstrip Antennas
Also called “patch antennas”
• One of the most useful antennas at microwave frequencies (f > 1 GHz). • It consists of a metal “patch” on top of a grounded dielectric substrate. • The patch may be in a variety of shapes, but rectangular and circular are the most common. History of Microstrip Antennas
• Invented by Bob Munson in 1972. •Second Became Symp. popular on USAF starting Antenna Researchin the 1970s. and Development Program,
R. E. Munson, “Microstrip Phased Array Antennas,” Proc. of Twenty-
October 1972.
R. E. Munson, “Conformal Microstrip Antennas and Microstrip Phased Arrays,” IEEE Trans. Antennas Propagat., vol. AP-22, no. 1 (January 1974): 74–78. Typical Applications
single element array
(Photos courtesy of Dr. Rodney B. Waterhouse) Typical Applications (cont.)
MPA microstrip antenna filter DC supply Micro-D K-connector connector LNA PD fiber input with diplexer collimating lens
Microstrip Antenna Integrated into a System: HIC Antenna Base-Station for 28-43 GHz
(Photo courtesy of Dr. Rodney B. Waterhouse) Geometry of Rectangular Patch y
W
L x h
Note: L is the resonant dimension. The width W is usually chosen to be larger than L (to get higher bandwidth). However, usually W < 2 L. W = 1.5 L is typical. Geometry of Rectangular Patch (cont.)
view showing coaxial feed
x
y feed at (x0, y0) Feed along the centerline is the most common (minimizes W higher-order modes and cross-pol)
x L Advantages of Microstrip Antennas
• Low profile (can even be “conformal”). • Easy to fabricate (use etching and phototlithography). • Easy to feed (coaxial cable, microstrip line, etc.) . • Easy to use in an array or incorporate with other microstrip circuit elements. • Patterns are somewhat hemispherical, with a moderate directivity (about 6-8 dB is typical). Disadvantages of Microstrip Antennas
¾ Low bandwidth (but can be improved by a variety of techniques). Bandwidths of a few percent are typical. ¾ Efficiency may be lower than with other antennas. Efficiency is limited by conductor and dielectric losses*, and by surface-wave loss**.
* Conductor and dielectric losses become more severe for thinner substrates.
** Surface-wave losses become more severe for thicker substrates (unless air or foam is used). Basic Principles of Operation
The patch acts approximately as a resonant cavity (short circuit walls on top and bottom, open-circuit walls on the sides). In a cavity, only certain modes are allowed to exist, at different resonant frequencies. If the antenna is excited at a resonant frequency, a strong field is set up inside the cavity, and a strong current on the (bottom) surface of the patch. This produces significant radiation (a good antenna). Thin Substrate Approximation
On patch and ground plane, Et = 0 E = zEˆ z ( x, y)
Inside the patch cavity, because of the thin substrate, the electric field vector is approximately independent of z.
Hence E ≈ zEˆ z ( x, y)
Exyz ( , )
h Thin Substrate Approximation
Magnetic field inside patch cavity:
1 HE=− ∇× jωμ 1 =− ∇×()zEˆ z () x, y j ωμ 1 =−() −zExyˆ ×∇ (), j z ωμ Hence 1 Hxy(),,=×∇() zˆ E() xy jωμ z Thin Substrate Approximation (cont.)
1 Hxy(),,=×∇() zˆ E() xy jωμ z
Note: the magnetic field is purely horizontal.
(The mode is TMz.)
Exyz ( , ) h
H (xy, ) Magnetic Wall Approximation
On edges of patch, y
Jns ⋅=ˆ 0 J s W Also, on lower surface of tˆ nˆ patch conductor we have x L JzHs =−×()ˆ
J s nˆ Hence, h
Ht = 0 Magnetic Wall Approximation (cont.)
y Since the magnetic field is approximately independent of z, J we have an approximate PMC s condition on the edge. W tˆ nˆ
H = 0(PMC ) x t L
nˆ h
PMC Magnetic Wall Approximation (cont.)
nHxyˆ ×=(),0 y
1 Hxy(),,=×∇() zˆ E() xy J jωμ z s W tˆ nˆ Hence, x ˆ ˆ nz××∇() Exyz (),0 = L
znˆ ()ˆ ⋅∇ Ez () xy,0 = nˆ h ∂E z = 0 ∂n PMC Resonance Frequencies
22 y ∇+EkEzz =0
From separation of variables: (x0, y0) ⎛⎞⎛⎞mxππ ny W Ez = cos⎜⎟⎜⎟ cos ⎝⎠⎝⎠LW x (TMmn mode) L
⎡⎤22 ⎛⎞⎛⎞mnππ2 ⎢⎥−−+=⎜⎟⎜⎟kEz 0 ⎣⎦⎢⎥⎝⎠⎝⎠LW
⎡⎤22 ⎛⎞⎛⎞mnππ2 Hence ⎢⎥−⎜⎟⎜⎟−+=k 0 ⎣⎦⎢⎥⎝⎠⎝⎠LW Resonance Frequencies (cont.) y 22 2 ⎛⎞⎛⎞mnπ π k =+⎜⎟⎜⎟ ⎝⎠⎝⎠LW (x0, y0) W Recall that k = ω με ε x 00 r L ω = 2π f
Hence πε 22 cm⎛⎞⎛⎞π nπ f =+ ⎜⎟⎜⎟ c =1/ μ00ε 2 r ⎝⎠⎝⎠LW Resonance Frequencies (cont.) y
Hence f = fmn (x0, y0) W (resonance frequency of (m, n) mode) x L πε 22 cm⎛⎞⎛⎞π nπ fmn =+⎜⎟⎜⎟ 2 r ⎝⎠⎝⎠LW (1,0) Mode y current This mode is usually used because the radiation pattern has a broadside beam. W ⎛⎞π x Ez = cos⎜⎟ ⎝⎠L x L c ⎛⎞1 f10 = ⎜⎟ 2 ε ⎝⎠L This mode acts as a wide r microstrip line (width W) that has a resonant length ωμ ⎛⎞−1 ⎛⎞π ⎛π x ⎞ of 0.5 guided wavelengths Jx= ˆ sin s ⎜⎟⎜⎟ ⎜ ⎟ in the x direction. ⎝⎠jLL0 ⎝⎠ ⎝ ⎠ Basic Properties of Microstrip Antennas Resonance Frequency
The resonance frequency is controlled by the patch length L and the substrate permittivity. Approximately, Note: this is equivalent to saying that c ⎛⎞1 the length L is one-half of a f10 = ⎜⎟ wavelength in the dielectric: ε r ⎝⎠2L
λ0 /2 kL = π L ==λd /2 ε r Note: a higher substrate permittivity allows for a smaller antenna (miniaturization) – but lower bandwidth. Resonance Frequency (cont.)
The calculation can be improved by adding a “fringing length extension” ΔL to each edge of the patch to get an “effective length” Le .
y LLe =+Δ2 L
ΔL ΔL c ⎛⎞1 f10 = ⎜⎟ L L 2 ε r ⎝⎠e x
Le Resonance Frequency (cont.)
Hammerstad formula:
⎡ eff ⎛⎞W ⎤ ()ε r ++0.3⎜⎟ 0.264 ⎢ h ⎥ Δ=Lh/0.412⎢ ⎝⎠⎥ ⎢ eff ⎛⎞W ⎥ ()r ε −+0.258⎜⎟ 0.8 ⎣⎢ ⎝⎠h ⎦⎥
ε −1/2 eff εεrr+−11⎛⎞⎡ ⎛⎞h ⎤ r =+⎜⎟⎢112 +⎜⎟⎥ 22⎝⎠⎣ ⎝⎠W ⎦ Resonance Frequency (cont.)
Note: ΔL ≈ 0.5 h
This is a good “rule of thumb.” Results: resonance frequency
1
Hammerstad Y
C Measured
N 0.95
E
U
Q E
R 0.9
F
D
E Z
I 0.85
L
A
M R
O 0.8 N
0.75 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
h / λ0
The resonance frequency has been normalized εr = 2.2 by the zero-order value (without fringing):
W/ L = 1.5 fN = f / f0 Basic Properties of Microstrip Antennas Bandwidth: substrate effects
• The bandwidth is directly proportional to substrate thickness h.
• However, if h is greater than about 0.05 λ0 , the probe inductance becomes large enough so that matching is difficult.
• The bandwidth is inversely proportional to εr (a foam substrate gives a high bandwidth). Basic Properties of Microstrip Antennas Bandwidth: patch geometry
• The bandwidth is directly proportional to the width W.
Normally W < 2L because of geometry constraints:
W = 1.5 L is typical. Basic Properties of Microstrip Antennas
Bandwidth: typical results
• For a typical substrate thickness (h / λ0 = 0.02), and a typical substrate permittivity (εr = 2.2) the bandwidth is about 3%. • By using a thick foam substrate, bandwidth of about 10% can be achieved. • By using special feeding techniques (aperture coupling) and stacked patches, bandwidth of over 50% have been achieved. Results: bandwidth
30
25
) ε r = 10.8 %
( 20
H
T D
I 15
W
D N
A 10 B
5 2.2
0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / λ 0
The discrete data points are measured values. The solid curves are from a CAD formula. εr = 2.2 or 10.8 W/ L = 1.5 Basic Properties of Microstrip Antennas Resonant Input Resistance
• The resonant input resistance is almost independent of the substrate thickness h.
• The resonant input resistance is proportional to εr. • The resonant input resistance is directly controlled by the location of the fed point. (maximum at edges x = 0 or x = L, zero at center of patch.
(x0, y0) W
L L Resonant Input Resistance (cont.)
Note: patch is usually fed along the centerline (y = W / 2) to maintain symmetry and thus minimize excitation of undesirable modes.
y
(x0, y0) W
x L Resonant Input Resistance (cont.)
For a given mode, it can be shown that the resonant input resistance is proportional to the square of the cavity-mode field at the feed point.
2 RExyin∝ z ()00, y
(x , y ) For (1,0) mode: 0 0 W
2 ⎛⎞π x0 Rin ∝ cos ⎜⎟ ⎝⎠L x L Resonant Input Resistance (cont.)
Hence, for (1,0) mode: y 2 ⎛⎞π x0 RRin= edge cos ⎜⎟ ⎝⎠L (x0, y0) W
The value of depends strongly Redge x on the substrate permittivity. For a L typical patch, it may be about 100- 200 Ohms. Results: resonant input resistance
200 The discrete
data points are )
from a CAD
Ω
( 150
formula.
E εr = 10.8
C
N
A T
S 100
I
S
E R
2.2 T
U 50
P
N I y 0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08
h / λ0 (x0, y0) W εr = 2.2 or 10.8 W/L = 1.5 x = L/4, y = W/2 0 0 L x Basic Properties of Microstrip Antennas Radiation Efficiency
• Radiation efficiency is the ratio of power radiated into space, to the total input power.
Pr er = Ptot
• The radiation efficiency is less than 100% due to ¾ conductor loss ¾ dielectric loss ¾ surface-wave power Radiation Efficiency (cont.)
y
TM0 surface wave
x
cos (φ) pattern Radiation Efficiency (cont.)
Hence,
PPrr er == PtotPPPP r+++() c d sw
Pr = radiated power Pc = power dissipated by conductors P = power dissipated by dielectric Ptot = total input power d
Psw = power launched into surface wave Radiation Efficiency (cont.)
• Conductor and dielectric loss is more important for thinner substrates. • Conductor loss increases with frequency (proportional to f ½) due to the skin effect. Conductor loss is usually more important than dielectric loss.
1 2 Rs is the surface resistance Rs = δ = of the metal. The skin depth σδ ωμσ of the metal is δ. Radiation Efficiency (cont.)
• Surface-wave power is more important for thicker substrates or for higher substrate permittivities. (The surface-wave power can be minimized by using a foam substrate.) Radiation Efficiency (cont.)
•For a foam substrate, higher radiation efficiency is obtained by making the substrate thicker (minimizing the conductor and dielectric losses). The thicker the better!
•For a typical substrate such as εr = 2.2, the radiation efficiency is maximum for h / λ0 ≈ 0.02. 0.1 0.09 0.08 2.2 0.07 10.8 Note: CAD plot uses Pozar formulas 0.06 0 λ 0.05 h / 0.04 = 1.5 L exact CAD / 0.03 W 0.02 0.01 10.8 or 0 0
80 60 40 20
100 E F F I C I E N C Y
( % ) = 2.2 r
Results: conductor and dielectric losses are neglected ε Results: accounting for all losses
100 2.2
80
)
% (
exact
Y 60
C CAD
N E
I εr = 10.8 C
I 40
F
F E
20
0 0 0.02 0.04 0.06 0.08 0.1
h / λ0
εr = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formulas Basic Properties of Microstrip Antenna Radiation Patterns
• The E-plane pattern is typically broader than the H- plane pattern. • The truncation of the ground plane will cause edge diffraction, which tends to degrade the pattern by introducing: ¾ rippling in the forward direction ¾ back-radiation
Note: pattern distortion is more severe in the E-plane, due to the angle dependence of the vertical polarization Eθ and the SW pattern. Both vary as cos (φ). Radiation Patterns (cont.)
E-plane pattern
Red: infinite substrate and ground plane Blue: 1 meter ground plane
0
30 -30
-10
60 -20 -60
-30
-40 -30 -20 -10 90 -90
120 240
150 210
180 Radiation Patterns (cont.)
H-plane pattern
Red: infinite substrate and ground plane Blue: 1 meter ground plane
0
45 -10 -45
-20
-30
-40 -30 -20 -10 90 -90
135 225
180 Basic Properties of Microstrip Antennas Directivity
• The directivity is fairly insensitive to the substrate thickness. • The directivity is higher for lower permittivity, because the patch is larger. Results: Directivity
10 ε r = 2.2
8
)
B d
( 10.8
Y 6
T
I
V
I T
C 4
E exact
R I
D CAD 2
0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / λ 0
εr = 2.2 or 10.8 W/ L = 1.5 Approximate CAD Model for Zin
• Near the resonance frequency, the patch cavity can be approximately modeled as an RLC circuit.
• A probe inductance Lp is added in series, to account for the “probe inductance”.
probe patch cavity
L Lp R C Zin Approximate CAD Model (cont.) R ZjLin≈+ω p 12+ jQ() f / f0 − 1
R 1 Q = BW = BW is defined here by ω L 0 2 Q SWR < 2.0. 1 ωπ==2 f 00LC
L Lp R C Approximate CAD Model (cont.)
RR= in max
Rin max is the input resistance at the resonance of the patch cavity (the frequency that maximizes Rin).
L Lp R C Results : input resistance vs. frequency
80
70
60 CAD
) 50 exact
Ω
(
40
n i frequency where the R 30 input resistance is maximum 20
10
0 4 4.5 5 5.5 6 FREQUENCY (GHz)
εr = 2.2 W/L = 1.5 L = 3.0 cm Results: input reactance vs. frequency frequency where the input resistance is maximum 80
60 CAD exact
40
)
Ω
( 20
n
i X 0
-20 shift due to probe reactance
-40 4 4.5 5 5.5 6 FREQUENCY (GHz) frequency where the input impedance is real
εr = 2.2 W/L = 1.5 L = 3.0 cm Approximate CAD Model (cont.) Approximate CAD formula for feed (probe) reactance (in Ohms)
a = probe radius h = probe height
η ⎡ ⎛⎞2 ⎤ Xkh=⎢−+⎥0 ()ln ⎜⎟ f 2 0 ⎜⎟ka π ⎣⎢ ⎝⎠r ()0 ⎦⎥ γ XL= ω f p ε
γ 0.577216 (Euler’s constant)
ημε000==Ω/376.73 Approximate CAD Model (cont.)
• Feed (probe) reactance increases proportionally with substrate thickness h. • Feed reactance increases for smaller probe radius.
η ⎡ ⎛⎞2 ⎤ Xkh=⎢−+⎥0 ()ln⎜⎟ f 2 0 ⎜⎟ π ⎢ r ()ka0 ⎥ ⎣ γ ⎝⎠⎦
ε Results: probe reactance (Xf =Xp= ωLp)
40
εr = 2.2 35 CAD exact 30 W/L = 1.5
25
)
Ω (
20 h = 0.0254 λ
0
f X 15 a = 0.5 mm 10
5
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Xr
xr is zero at the center of the patch, and is xr = 2 ( x0 / L) - 1 1.0 at the patch edge. CAD Formulas
In the following viewgraphs, CAD formulas for the important properties of the rectangular microstrip antenna will be shown. CAD Formula: Radiation Efficiency
ηλλ πη λ ehed e = r r ⎡⎤⎡⎤ hed ⎛⎞⎛⎞Rs 13⎛⎞⎛⎞ε r ⎛⎞L ⎛⎞ 1 1 ++erd⎢⎥⎢⎥ ⎜⎟⎜⎟⎜⎟⎜⎟ ⎜⎟ ⎜⎟ ⎣⎦⎣⎦⎝⎠⎝⎠00hpcWh/16/⎝⎠⎝⎠ 1 ⎝⎠ ⎝⎠ 0
where