Index

AAS oscillation 16, 80, 87 atomic-force-microscopy 228 AB effect 15 Au 15 AB oscillation 15 AB type oscillation 76, 81, 86 backward scattering 56 acceleration equation 35 ballistic motion 4, 27 addition energy 67 ballistic regime 5 AFM 228, 243, 247 ballistic transport 1, 6, 28 Ag 3 band offset 190 Aharonov-Bohm effect 1, 15 BDD 220 Aharonov-Bohm flux 110 bend resistance 27 Aharonov-Bohm oscillation 16 Bethe ansatz 45 Aharonov-Bohm type oscillation bi-exciton 268 76 binary decision diagram 220 Al 43 blackbody emission 99 AlAs 105,176, 183, 199,228,249 blackbody radiation 101 AlAs/GaAs 22 Bloch condition 83 AIGaAs 104, 184, 228, 238, 247 Blochfrequency 199 AIGaAs/GaAs 99 Bloch oscillation 35, 102, 104, 199 AIGalnAs/lnP 179 Bloch's theorem 83, 140 AIGalnP 176 Bohr radius 4 AIGalnP /GaAs 177 Boltzmann constant 5,31 Altshuler-Aronov-Spivak oscilla• Boltzmann distribution 64 tion 16, 72, 80 Boltzmann transport equation 3 analog computation 222 Boolean expression 220 Anderson localization 5, 8, 87, Boolean operation 220 109, 146 Born approximation 46, 56, 58 anisotropic etching 216 bosonization technique 25, 47 antidot disorder 80, 87 boundary roughness 54 antidot lattice 8, 72 Bragg reflection 1, 104, 187, 199 antidot potential 72 breakdown of quantum Hall effect aperture function 205 112 artificial atom 1, 66 Brillouin zone 35, 104 aspect ratio 73 bulk 4 274 Index bulk-current picture 109 Coulomb blockade oscillation 37, butterfly oscillation 77 66, 218 butterfly spectrum 8 Coulomb diamond 67 Biittiker-Landauer formula 85, Coulomb gap 66 111 Coulomb interaction 1, 4, 6, 50, 58, 67 CaF2 188 Coulomb oscillation 37, 66 cathodoluminescence 250, 257 coupled quantum well 195 cavity polariton 164 critical exponent of localization cavity quasimode 161 114 cavity resonance mode 161 critical randomness 9 center coordinate 111, 120 Cu 3 CEO 255 current probe 28 chaos 1,8 current source 32 chaotic orbit 72 current standard 33 charging effect 1 current-voltage characteristics 105 charging energy 4, 6, 31, 34, 37 cyclotron diameter 27 chemical potential 11, 51 cyclotron energy 61, 69 CL 250,257 cyclotron frequency 116 classical action 79 cyclotron motion 63 cleaved edge overgrowth 255 cyclotron orbit 72, 79, 90 Co 188 cyclotron radius 28, 55, 90, 132 coherence volume 149 cylinder-shaped microcavity 164 coherent destruction of tunneling cylindrical metal film 80 200 collimation 30 DBR 179,183 commensurability condition 90 DBRTD 207 commensurability oscillation 72 de Broglie wavelength 195 commensurability peak 72, 86 deep mesa etching 6 complex unitary matrix 9 defect mode 168 composite fermion 94 deformation potential 93 compressible and incompressible strips 132, 136 delocalized state 9 conductance fluctuation 1 density-density correlation function conductance quantization 1, 13, 46 22 density of states 9, 56, 64, 77, 84, constriction 36 133 Cooper pair 15, 18, 43 dephasing process 16 device trend 213 CoSi2 188 diagonal conductivity 75 CoSi2 /CaF2 188 Coulomb blockade 1,31,66, 187, diagonal resistivity 72 218 diamagnetic shift 239 Index 275 differential capacitance 133 electron-electron interaction 26, differential conductance 66 37, 66, 98 differential resistance 32 electron-electron scattering 5, 206 diffraction 187 electron heating 97 diffusion coefficient 4, 9, 18, 74, electron-hole pair 42 115 electron holography 15 diffusive motion 4 electron-phonon interaction 61 diffusive regime 5, 13, 80 electron-phonon scattering 5 disk-shaped micro cavity 164 electron temperature 99 disordered contact 126 electron wave 1 distributed Bragg reflector 179, electron wavefront 204 183 electron waveguide 196 distributed circuit 135 electroreflectance 104 DOS model 133 elliptic coordinates 25 double-barrier resonant tunneling energy-dispersive x-ray spec- diode 207 troscopy 232, 249 double-barrier structure 66 ensemble average 5 double slit 205, 210 envelope function 143 DRAM 213 environmental effect 31 drift velocity 91 equi-energy line 83 Drude conductivity 101 equilibration length 126 Drude formula 49 dynamical interaction 5 ergodic hypothesis 17 evanescent mode 82 EBL 210 exchange effect 70 EB lithography 216 exchange interaction 67, 70 edge channel 109 exciton 144 edge current 112, 120 extended state 9, 109 edge-current picture 109 edge magnetoplasmon 122 Fabry-Perot interferometer 191 edge state 45, 55, 132 Fabry-Perot micro cavity 161, 168 effective channel number 13 Fabry-Perot resonance 161 effective chemical potential 12 Fabry-Perot structure 183 effective mass 144, 195 Faraday configuration 97 effective-mass approximation 105, far-infrared 96 141,257 FEL 201 Einstein relation 9 Fermi energy 3, 5, 20, 22, 30, 38, electrochemical potential 66, 120 45, 54, 72, 121, 205, 206 electroluminescence 265 Fermi level 24, 37, 58, 66, 90, 109, electron affinity 67 111, 116, 133, 190 electron beam lithography 210 Fermi liquid 45 electron directional coupler 196 Fermi liquid theory 5,47 276 Index

Fermi surface 47, 90 97, 114, 132, 152, 171, 198,201, Fermi velocity 3, 26 247, 255 Fermi wavelength 3, 6, 8, 13, 36, GalnAs 176 72,76 GalnAs/ AlInAs 61 Fermi wave number 3, 25, 54 GalnAs/GaAs 176, 199 Fermi wave vector 3, 90 GalnAs/InP 61, 207, 210 field-effect device 193 GalnAsP 176, 210 field-effect tunneling transistor GalnAsP/InP 171,174,179 188 GalnNAs/GaAs 179 filling fraction 170 gain profile 181 fine-area photoluminescence spec- galvanomagnetic effect 111 trum 229 GaN 176 fine structure constant 109 gas-source MBE 228, 265 FIR 96 Gauss's theorem 41 FIR spectroscopy 96 Ge 264 first Brillouin zone 140 geometrical resonance 90 FIR transmission spectroscopy 96 giant step 247 fluctuations of orbital susceptibility glancing-angle MBE 255 19 fluorescence 156 grating coupler 101 flux average 112 growth interruption 269 flux quantization 15, 18 guiding center 91 flux quantum 15, 80, 88, 109 guiding center coordinate 90 Fock-Darwin state 7, 68 Fourier transform 204 Hall conductivity 75 four-terminal geometry 111 Hall field 109 four-wave mixing 105, 198 Hall resistance 29 Frohlich interaction 63 Hall resistivity 72 free-electron laser 201 harmonic potential 6 Frenkel exciton 144 Hartree-Fock calculation 67 Fresnel-Fourier transform 187 Hartree-Fock theory 39 Friedel oscillation 58 Hartree potential 96 Friedel sum rule 39 hemispherical micro cavity 164 fusion technique 174 HEMT 224 heterostructure 4 GaAlAs 165, 176 high electron mobility transistor GaAlAs/AIAs 165,176 224 GaAs 22, 36, 50, 52, 66, 106, 150, higher harmonics 32 163,174,176,183,206,228, high-speed device 213 230, 238, 247 Hofstadter's butterfly 8, 77 GaAs/ AlAs 104, 228, 255 hot electron 101 GaAs/ AIGaAs 3, 61, 64, 72, 90, hot-electron diffraction device 210 Index 277 hot electron wave 205 Kosteritz-Thouless...lBerezinskii hot plasmon 101 transition 42 Hubbard model 45, 52 Kramers degeneracy 10 Hund's rule 67, 70 KTB transition 42 hysteresis 93 Kubo formula 12, 62 ideal lead 85 Landau diamagnetism 17, 20 ideal reservoir 11 Landauer's formula 1, 11, 22, 45, ideal wire 11 51, 111 Landau gauge 62, 90, 92 InAs 243 Landau level 61,90, 112, 120, 132 InAs/ AlGaSb 64 Landau subband 90 incoming channel 13 laser interference pattern 90 inelastic scattering 5, 16, 115 lateral superlattice 8, 90 inelastic scattering length 16 lattice vibration 5 inelastic scattering time 115 linear response theory 112 InGaAs 66, 164, 183, 228, 243 local current 27 InGaAs/GaAs 231 local current distribution 112 InGaAs quantum dot 183, 243 local electric field 27 InP 172, 176,228 localization in quantum Hall in-plane gate 6 regime 110 integer quantum Hall effect 9, localization length 8, 88, 117 109,120 localized state 109 interface roughness 106 LO phonon 61,206 interference 187 low-power device 213 interference device 206 LSI technology 187 interference effect 14, 31, 80 Luttinger-Kohn Hamiltonian 151 interference switch 205 Lyapunov exponent 79 inverse Bloch oscillation 201 inverse localization length 8, 110 macroscopic system 5 ion beam implantation 238 magic number 67 ion beam milling 238 magnetic depopulation 96 IQHE 120 magnetic-field modulation 93 magnetic flux 82 Josephson effect 34 magnetic focusing 27, 74 junction network 40 magnetic length 82, 112, 120, 132 magnetic moment 39 Kirchhoff's diffraction theory 205 magnetic unit cell 82 Kohn's theorem 7,98 magnetic Weiss oscillation 93 Kondo effect 39 magneto capacitance 132 Kondo temperature 39 magneto-fingerprint 15 Korringa relation 46 magnetophonon resonance 61 278 Index magnetoresistance 54, 64, 86, 90 negative differential conductance Maslov index 79 218 MBE 188,227,247,255 negative differential resistance mean free path 3,8, 13, 18,27, 190, 208 54, 80, 86, 90 negative magnetoresistance 9, 80 mesoscopic physics 31 neighboring confinement structure mesoscopic system 1 266 metal-insulator transition 8 Neumann-type computing architec- metallic dot 6 ture 220 metallic wire 6 Ni 93 metalorganic chemical vapor depo- nonlocal resistance 112, 126 sition 209, 227 nonlocal transport 27 metalorganic MBE 228 nonparabolicity 113 MgOjSi 176 normal order 147 Michaelson interferometer 96 nuclear relaxation time 46 micro cavity 1, 139, 157 microcavity laser 157 OMVPE 209, 227 micro-PL 240 optical atom 167 microsphere 164 optical pumping 184 microwave 32, 36 opto-electric effect 122 miniband collapse 200 orbital current 17, 20 MOBILE 223 orbital magnetism 17 MOCVD 209, 227 orbital susceptibility 19 MOCVD selective growth 238 organometallic vapor phase epitaxy model-solid theory 264 209, 227 modulation bandwidth 181 orthogonal 9 molecular beam epitaxy 227 outgoing channel 13 monostable-to-bistable transition logic element 223 MOSFET 4, 96, 213 parabolic confinement 7 MPR 61 parabolic confinement potential 98 MQB 178 MQW 255 parquet graph method 58 multi-atomic step 228,244, 247 peak-to-valley ratio 191 multilayer filter 167 penetration depth 18 multiple reflection 187 perfect conducter 11 multi-quantum barriers 178 periodic boundary condition 17 multi-quantum well 255 periodic electric potential 8 periodic lateral potential 90 NCS 266 periodic magnetic field 8 NDC 218 periodic orbit 72, 77 NDR 190,208 periodic orbit theory 77 Index 279 persistent current 17 quantized Hall conductivity 110 persistent photoconductivity 90 quantized Hall resistance 111 phase breaking time 206 quantized periodic orbit 79 phase coherence 4 quantum cellular automaton 222 phase coherence length 5, 115, quantum chaos 1, 79 208 quantum confinement effect 66 phase Hamiltonian 47 quantum dot 1, 4, 36, 66, 88, 96, phase relaxation time 5 139, 227, 233, 240 phase shift 37 quantum dot laser 181, 227 phase space 72 quantum-effect device 1 photocurrent 104 quantum electrodynamics 109 photoluminescence 172, 184, 228, quantum Hall effect 1, 109 239, 249, 261, 264 quantum Hall plateau 132 photoluminescenc.e excitation spec- quantum interference transistor trum 232 188, 192 photon-assisted tunneling 201 quantum nondemolition measure• photon density of states 170 ment 154 photon DOS 170 quantum point contact 13, 22 photonic band calculation 169 quantum well 96, 139, 195, 228, photonic band gap 167 265 photonic crystal 167 quantum wire 1, 4, 6, 25, 50, 61, piezoelectric potential 93 72, 96, 139, 227, 238, 247, 255, pillar type micro cavity 163 268 pinned orbit 72 quantum wire laser 181 PL 172, 184, 228, 239, 249, 261, quarternion 10 264 quasi-Fermi level 182 planar micro cavity 161, 163 quasimode radius 161 plane wave 4 quenching of Hall effect 28, 72 plasma oscillation 102 QW 228,265 PLE 232 QWR 96, 181, 227, 247, 255, 268 point contact 216 polariton 164 Rabi frequency 159, 164, 183 post type microcavity 163 Rabi oscillation 159, 164, 183 power conversion efficiency 176 Rabi splitting 165 power-law decay 45 randomness 19 proximity effect 18 random walk 4 pyramid quantum dot 233 reactive ion beam etching 172 reactive ion etching 238 QCA 222 real symmetric matrix 9 QD 181, 227, 233 recursive Green's function tech- quantization energy 4 nique 80, 112 quantized conductance 45 red uced mass 145 280 Index reflection coefficient 57 silicon-on-insulator 213, 216 reflection high-energy electron SiN 216 diffraction 247 single-electron device 216 reflection probability 11, 114 single-electron switch 221 relaxation time 3, 20 single-electron tunneling 1, 4, 31, renormalization group method 58 187 resistance standard 109 single-parameter scaling theory 9 resonant absorption 61 single quantum well 256 resonant emission 61 SiN", 234 resonant transmission 37 Si02 238 resonant tunneling diode 201 SK growth mode 183, 243, 269 resonant tunneling hot electron skipping motion 132 transistor 190, 225 skipping orbit 55 resonant tunneling transistor 188 S matrix 82 RHEED 247 snake orbit 94 RHET 190, 225 SOl 213, 216 RIBE 172 runaway orbit 72, 83 specular reflection 27 spin-charge separation 45 scattering probability 54 spinodal phase separation 244 scattering time 3, 96 spin-orbit interaction 10 SCBA 76 split gate 6 Schawlow-Townes linewidth 182 split-gate geometry 96 Schottky gate 66 spontaneous emission 156 screened Coulomb interaction 59 spontaneous emission coupling effi- selective area MOCVD growth ciency 168 233 spontaneous emission coupling ra• self-aligned quantum dot 244 tio 157, 162 self-assembled quantum wire 268 spontaneous emission enhancement self-consistent Born approximation factor 157 76 spontaneous emission rate 168 self-limited growth 234 square lattice 80 semiclassical regime 72 SQW 256 semiconductor superlattice 102 stability angle 79 SET 31 stable orbit 77 SET oscillation 32 standing wave 157 shallow etching 61 Stark ladder 104, 199 shallow mesa etching 6 Stark regime 105 shell structure 67 stimulated emission 156 Si 188, 216, 264 Stokes theorem 15 SiGe 264 strain-induced lateral potential SiGe/Si 264 modulation 270 Index 281 strain-induced quantum dot 270 transmission probability 11, 24, Stranski-Krastanow growth mode 111 183, 233, 243, 269 transport current 17 Stranski-Krastanow quantum dot transport relaxation time 3, 46 227 traveling mode 82 strong localization 9, 87 traveling wave 157 superconducting ring 15, 18 triangular lattice 80 superconducting tunnel junction· triple-barrier resonant tunneling 33 diode 201,207 superlattice 199, 265 T -shaped quantum wire 255 supersymmetric t-J model 45 tunneling field-effect transistor surface emitting laser 176 193 symplectic 10 tunneling Hamiltonian 33 tunnel junction 31 TBRTD 207 two-terminal conductance 11 TEM 189, 231, 249, 268 two-terminal geometry 111 terahertz spectrocsopy 96 thermal average 5 UCF 17 thermal diffusion length 5 Urnklapp scattering 52 thermal oxidation 216 uncertainty principle 156, 163 thin film 4 uncertainty relation 9 Thouless energy 5 unitary 9 Thouless number 9 universal conductance fluctuations threshold current 176, 181 1, 12, 17 threshold voltage 31 universality 110 THz spectroscopy 96, 198 unpaired electron 33 tight-binding model 104 unstable orbit 79 time-resolved THz spectroscopy 102 vacuum fluctuation 156 time-reversal symmetry 9, 16 vacuum Rabi oscillation 164 Tomonaga-Luttinger liquid 1,45, variable range hopping 88 52 VCSEL 176 topological y.rinding number 109 vector potential 15, 62, 82, 90 torus geometry 110 vertical cavity surface emitting T-QWR 255 laser 176 trace formula 77 vertical micro cavity quantum dot transfer resistance 28 laser 184 transfer time 198 vertical quantum dot 66 transition region 113 V-groove 238, 241, 268 transmission coefficient 38 V-groove quantum wire 227,240 transmission electron microscope vicinal substrate 228 189. 268 VLSI 213 282 Index voltage distribution 115 Weiss oscillation 90 voltage probe 28 wet chemical etching 238 voltage-tunable FIR detector 99 wetting layer 243 whispering-gallery mode 164 Wannier exciton 144 Wannier function 140 Yablonovite structure 174 Wannier-Stark ladder 199 Wannier-Stark resonance 105 Zener regime 105 Wannier-Stark state 104 Zener tunneling 104 Ward identity 51 ZnS 104 weak localization 9 ZnSe 176