Tracking the Evolution of Magmas from Heterogeneous Mantle Sources to Eruption A
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Growth and Characterization of Lif Single-Crystal Fibers by the Micro
ARTICLE IN PRESS Journal of Crystal Growth 270 (2004) 121–123 Growth and characterization of LiF single-crystal fibers by the micro-pulling-down method A.M.E. Santoa, B.M. Epelbaumb, S.P. Moratoc, N.D. Vieira Jr.a, S.L. Baldochia,* a Instituto de Pesquisas Energeticas! e Nucleares, IPEN-CNEN/SP, Av. Prof. Lineu Prestes, CEP 05508-900, Sao* Paulo, SP, Brazil b Department of Materials Science, University of Erlangen-Nurnberg, D-91058, Erlangen, Germany c LaserTools Tecnologia Ltda., 05379-130,Sao* Paulo, SP, Brazil Accepted 27 May 2004 Available online 20 July 2004 Communicated by G. Muller. Abstract Good optical quality LiF single-crystalline fibers ranging from 0:5to0:8 mm in diameter and 100 mm in length were successfully grown by the micro-pulling-down technique in the resistive mode. A commercial equipment was modified in order to achieve suitable conditions to grow fluoride single-crystalline fibers. r 2004 Elsevier B.V. All rights reserved. PACS: 81.10.Fq; 78.20.Àe Keywords: A2. Micro-pulling-down method; A2. Single crystal growth; B1. Fluorides 1. Introduction oxide single-crystals have already been grown by the laser heated pedestal growth (LHPG) [2] and There is an increasinginterest in the production by the micro-pulling-down (m-PD) [3] methods. of single-crystalline fibers. Their unique properties However, the growth and hence the possible indicate their use for production of a variety of applications of fluoride single-crystalline fibers optical and electronic devices [1]. The final shape has not yet been investigated. of the single-crystalline fiber is already in a form As it is already known from other methods of suitable for optical testingand applications, fluoride growth, these materials are very sensitive reducingthe time and cost of preparation. -
An Investigation of the Techniques and Advantages of Crystal Growth
Int. J. Thin. Film. Sci. Tec. 9, No. 1, 27-30 (2020) 27 International Journal of Thin Films Science and Technology http://dx.doi.org/10.18576/ijtfst/090104 An Investigation of the Techniques and Advantages of Crystal Growth Maryam Kiani*, Ehsan Parsyanpour and Feridoun Samavat* Department of Physics, Bu-Ali Sina University, Hamadan, Iran. Received: 2 Aug. 2019, Revised: 22 Nov. 2019, Accepted: 23 Nov. 2019 Published online: 1 Jan. 2020 Abstract: An ideal crystal is built with regular and unlimited recurring of crystal unit in the space. Crystal growth is defined as the phase shift control. Regarding the diverse crystals and the need to produce crystals of high optical quality, several many methods have been proposed for crystal growth. Crystal growth of any specific matter requires careful and proper selection of growth method. Based on material properties, the considered quality and size of crystal, its growth methods can be classified as follows: solid phase crystal growth process, liquid phase crystal growth process which involves two major sub-groups: growth from the melt and growth from solution, as well as vapour phase crystal growth process. Methods of growth from solution are very important. Thus, most materials grow using these methods. Methods of crystal growth from melt are those of Czochralski (tensile), the Kyropoulos, Bridgman-Stockbarger, and zone melting. In growth of oxide crystals with good laser quality, Czochralski method is still predominant and it is widely used in the production of most solid-phase laser materials. Keywords: Crystal growth; Czochralski method; Kyropoulos method; Bridgman-Stockbarger method. A special method is used for each group of elements depending on their usage and importance of their impurity, or consideration of form, impurity and size of crystal. -
Paleomagnetic Reconstruction in the Troodos Ophiolite Gabbro
The oceanic crust in 3D: Paleomagnetic reconstruction in the Troodos ophiolite gabbro Abstract The Troodos complex, Cyprus, provides an opportunity to study the structural configuration along a fossil intersection of a spreading axis and a transform fault. We complement studies at Troodos that have reconstructed the brittle deformation of the upper crust by new paleomagnetic data from the gabbro suite. The gabbro suite is exposed at the extinct spreading axis continuing the Solea graben toward the intersection with the fossil Arakapas oceanic transform. This is a unique exposure of deep crustal rocks formed at both an inside-corner and an outside-corner of a ridge- transform intersection. Remanence directions from gabbros (24 sites) were used as indicators for rigid body rotation. The spatial distribution of rotation axes allow recognition of three regions to which deformation is partitioned: 1) a western region (outside corner) that experienced primarily tilt about horizontal axis 2) a central region with minor rotation and, 3) an eastern area (inside corner) where vertical axis rotations are dominant. The absence of significant rotation in the 6 km-wide central domain together with its location between the inside- and the outside corner uncover the root of a fossil axial volcanic zone, a zone sufficiently hot so the upper crust can decouple from the substrate. Clockwise rotation in the gabbro increases from the axial zone eastward, similar to that in the overlying dikes, indicating coupling of the lower crust with the brittle upper oceanic crust. The transition from the decoupled layers of sheeted dikes and gabbro in the axial-zone to the dikes- gabbro coupling in the inside corner is in keeping with deepening of the brittle-ductile transition from the dike-gabbro boundary into the lower crust away from the axial zone. -
INTERNSHIP REPORT Single Crystal Growth of Constantan by Vertical
INTERNSHIP REPORT Single Crystal Growth of Constantan by Vertical Bridgman Method Supervisor: Prof. Henrik Rønnow Laboratory for Quantum Magnetism (LQM) Rahil H. Bharani 08D11004 Third year Undergraduate Metallurgical Engineering and Materials Science IIT Bombay May – July 2011 ACKNOWLEDGEMENT I thank École Polytechnique Fédérale de Lausanne (EPFL) and Prof. Henrik Rønnow, my guide, for having me as an intern here. I have always been guided with every bit of help that I could possibly require. I express my gratitude to Prof. Daniele Mari, Iva Tkalec and Ann-Kathrin Maier for helping me out with my experimental runs and providing valuable insights on several aspects of crystal growth related to the project. I thank Julian Piatek for his help in clearing any doubts that I have had regarding quantum magnetism pertaining to understanding and testing the sample. I am indebted to Neda Nikseresht and Saba Zabihzadeh for teaching me to use the SQUID magnetometer, to Nikolay Tsyrulin for the Laue Camera and Shuang Wang at PSI for the XRF in helping me analyse my samples. I thank Prof. Enrico Giannini at the University of Geneva for helping me with further trials that were conducted there. Most importantly, I thank Caroline Pletscher for helping me with every little thing that I needed and Caroline Cherpillod, Ursina Roder and Prof Pramod Rastogi for co-ordinating the entire internship program. CONTENTS INTRODUCTION REQUIREMENTS OF THE SAMPLE SOME METHODS TO GROW SINGLE CRYSTALS • CZOCHRALSKI • BRIDGMAN • FLOATING ZONE TESTING THE SAMPLES • POLISH AND ETCH • X-RAY DIFFRACTION • LAUE METHOD • SQUID • X-RAY FLUORESCENCE THE SETUP TRIAL 1 TRIAL 2 TRIAL 3 TRIAL 4 Setup, observations, results and conclusions. -
Compilation of Crystal Growers and Crystal Growth Projects Research Materials Information Center
' iW it( 1 ' ; cfrv-'V-'T-'X;^ » I V' 1l1 II V/ f ,! T-'* «( V'^/ l "3 ' lyJ I »t ; I« H1 V't fl"j I» I r^fS' ^SllMS^W'/r V '^Wl/ '/-D I'ril £! ^ - ' lU.S„AT(yMIC-ENERGY COMMISSION , : * W ! . 1 I i ! / " n \ V •i" "4! ) U vl'i < > •^ni,' 4 Uo I 1 \ , J* > ' . , ' ^ * >- ' y. V * / 1 \ ' ' i S •>« \ % 3"*V A, 'M . •. X * ^ «W \ 4 N / . I < - Vl * b >, 4 f » ' ->" ' , \ .. _../.. ~... / -" ' - • «.'_ " . Ife .. -' < p / Jd <2- ORNL-RMIC-12 THIS DOCUMENT CONFIRMED AS UNCLASSIFIED DIVISION OF CLASSIFICATION COMPILATION OF CRYSTAL GROWERS AND CRYSTAL GROWTH PROJECTS RESEARCH MATERIALS INFORMATION CENTER \i J>*\,skJ if Printed in the United States of America. Available from National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road, Springfield, Virginia 22t51 Price: Printed Copy $3.00; Microfiche $0.95 This report was prepared as an account of work sponsored by the United States Government. Neither the United States nor the United States Atomic Energy Commission, nor any of their employees, nor any of their contractors, subcontractors, or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness or usefulness of any information, apparatus, product or process disclosed, or represents that its use would not infringe privately owned rights. ORNL-RMIC-12 UC-25 - Metals, Ceramics, and Materials Contract No. W-7405-eng-26 COMPILATION OF CRYSTAL GROWERS AND CRYSTAL GROWTH PROJECTS T. F. Connolly Research Materials Information Center Solid State Division NOTICE This report was prepared as an account of work sponsored by the Unitsd States Government. -
Ophiolites and Oceanic Crust: New Insights from Field Studies and the Ocean Drilling Program
Ophiolites and Oceanic Crust: New Insights from Field Studies and the Ocean Drilling Program Geological Society of America Special Paper 349 Edited by Yildirim Dilek, Eldridge Moores, Don Elthon, and Adolphe Nicolas "Ophiolites are geological windows into the history of the Earth and Earth processes," Dilek and Moores said. "They provide important clues to how ocean basins formed and disappeared in the past and how the dynamic planet Earth's paleogeography (distribution of continental masses and oceans) looked many millions of years ago. The discovery of copper in ophiolitic volcanic rocks in the Mediterranean region ushered in the Bronze Age in the history of human civilizations. Studies of ophiolites have advanced the methods and theories of geology for more than 200 years. This book presents state-of-the-art information on the significance of ophiolites in studying different aspects of the Earth's history." Since 1972, when the first GSA Penrose Conference on Ophiolites was convened, these unique features have galvanized multinational and multidisciplinary efforts to study and decipher these complexes and their significance for understanding oceanic lithosphere formation. The second Penrose Conference on ophiolites in 1998 brought together 86 experts in structural geology, tectonics, geophysics, petrology, and geochemistry to explore new advances and discoveries concerning ophiolites and related drilling from the oceanic crust. Special Paper 349 includes 39 papers from this conference plus updated information on the evolution of ophiolites and modern oceanic crust, and integrates new interdisciplinary data from ocean drilling and other studies of in situ oceanic lithosphere with new results from field studies of ophiolite complexes around the world. -
SILICON INGOT PRODUCTION PROCESS for WAFERS the Element Silicon Has Been the Leading Semiconductor Material for Microelectronic Circuits for Decades
Basics of Microstructuring 01 Chapter MicroChemicals® – Fundamentals of Microstructuring www.microchemicals.com/downloads/application_notes.html SILICON INGOT PRODUCTION PROCESS FOR WAFERS The element silicon has been the leading semiconductor material for microelectronic circuits for decades. It can be produced in an extremely pure mono-crystalline form and doped with foreign materials in a targeted manner allowing for the modulation of the electrical conductivity over approx. six orders of magnitude. A great advantage of silicon compared to other semiconductor materials such as germanium or gallium arsenide is the possibility of generating a chemically stable electrical insulator with high breakdown fi eld strength from the substrate itself using selective thermal oxidation to SiO2. As a substrate for microelectronic circuits, silicon must be mono-crystalline in its purest form as described in this chapter. From Quartz to High-Purity Silicon Origin and Occurrence of Silicon Universe: 0.1 % Si Silicon fuses in the interior of massive suns at temperatures above 109 K from oxygen cores and is fl ung into the uni- Nuclear Fusion: Crust: 28 % Si verse at the end of the star’s life during 2 16O 28Si + 4He supernova explosions. Hydrogen and Earth: 17 % Si helium dominate the visible matter of the universe; silicon makes up less than 0.1% of the total mass (Fig. 1). Core: 7 % Si In our solar system formed from the "ashes" of earlier star explosions, silicon has been enriched, especially in the in- ner planets which have lost most of the volatile elements due to their proxim- ity to the central sun. The entire plan- et Earth contains approx. -
1 Single Crystal Growth by the Traveling Solvent Technique: a Review
1 Single crystal growth by the traveling solvent technique: A review S.M. Koohpayeh Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD 21218, USA Corresponding author: Dr S.M. Koohpayeh, [email protected] Tel. +1 410 516 7687; Fax +1 410 516 7239 Abstract A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural quality, high purity crystals. In order to optimize this process, careful control of the various growth variables is imperative; however, this can be difficult to achieve due to the large number of independent experimental parameters that can be grouped under the broad headings ‘growth conditions’, ‘characteristics of the material being grown’, and ‘experimental configuration, setup and design’. This review attempts to describe the principles behind the traveling solvent technique and the various experimental variables. Guidelines are detailed to provide the information necessary to allow closer control of the crystal growth process through a systematic approach. Comparison is made between the traveling solvent technique and other crystal growth methods, in particular the more conventional stationary flux method. The use of optical heating is described in detail and successful traveling solvent growth by optical heating is reported for the first time for crystals of Tl5Te3, Cd3As2, and FeSc2S4 (using Te, Cd and FeS fluxes, respectively). -
Crystal Growth by Floating Zone Technique
Crystal Growth by Floating Zone Technique Mylène Sage ([email protected]) Rijksuniversiteit Groningen Solid State Chemistry Laboratory Nijenborgh 4, 9747AG Groningen The Netherlands Outline • Introduction to Crystal Growth Techniques – Polycomponents – Monocomponent • Liquid-Solid Monocomponent Growth Techniques • Floating-Zone Technique – Description of the Equipment – Sample Preparation – Growth Preparation – Sample Growth • Characterization – Crystallinity – Determination of composition • Bibliography • Conclusions Crystal Growth Techniques (1) • Polycomponents • Solid-Solid – Precipitation from solid solution • Liquid-Solid – Growth from solution (evaporation, slow cooling, temperature differential) – Growth by reaction (same media, temperature change, concentration change) • Gas-Solid – Growth by reversible reaction (temperature change, concentration change) – Growth by irreversible process (epitaxial process) Crystal Growth Techniques (2) • Monocomponent • Solid-Solid – Strain annealing – Devitrification – Polymorphic-phase change • Gas-Solid – Sublimation / Condensation – Sputtering • Liquid-Solid (melt) – Directional solidification – Cooled seed Conservative – Pulling – Zoning Non-conservative – Verneuil Melt Growth (1) Czochralski Advantages Limitations •Growth from free surface •High vapor pressure materials •Growth of large oriented single •Liquid phase encapsulation crystals •Possible contamination of the melt by •Convenient chemical the crucible composition •No reproducibility of the crystal shape •Control of atmosphere Melt -
Research on Crystal Growth and Characterization at the National Bureau of Standards July to December 1964
i-k i national Bureau of Standards Reference bOOR HOt tn h^ • library, N.W. t^' i , - • MAY 13 1965 . , ^ecknlccil vZote 260 RESEARCH ON CRYSTAL GROWTH AND CHARACTERIZATION AT THE NATIONAL BUREAU OF STANDARDS JULY TO DECEMBER 1964 U. S. DEPARTMENT OF COMMERCE NATIONAL BUREAU OF STANDARDS lb THE NATIONAL BUREAU OF STANDARDS The National Bureau of Standards is a principal focal point in the Federal Government for assuring maximum application of the physical and engineering sciences to the advancement of technology in industry and commerce. Its responsibilities include development and maintenance of the national stand- ards of measurement, and the provisions of means for making measurements consistent with those standards; determination of physical constants and properties of materials; development of methods for testing materials, mechanisms, and structures, and making such tests as may be necessary, particu- larly for government agencies; cooperation in the establishment of standard practices for incorpora- tion in codes and specifications; advisory service to government agencies on scientific and technical problems; invention and development of devices to serve special needs of the Government; assistance to industry, business, and consumers in the development and acceptance of commercial standards and simplified trade practice recommendations; administration of programs in cooperation with United States business groups and standards organizations for the development of international standards of practice; and maintenance of a clearinghouse for the collection and dissemination of scientific, tech- nical, and engineering information. The scope of the Bureau's activities is suggested in the following listing of its four Institutes and their organizational units. Institute for Basic Standards. -
Characterization of the in Situ Magnetic Architecture of Oceanic Crust
PUBLICATIONS Journal of Geophysical Research: Solid Earth RESEARCH ARTICLE Characterization of the in situ magnetic architecture 10.1002/2015JB012783 of oceanic crust (Hess Deep) using near-source Key Points: vector magnetic data • Documenting the first magnetic profiles in fast-spreading lower crust Masako Tominaga1, Maurice A. Tivey2, Christopher J. MacLeod3, Antony Morris4, C. Johan Lissenberg3, and upper mantle 5 5 • Magnetically detect lithological Donna J. Shillington , and Vicki Ferrini contacts in fast-spreading lower crust 1 2 and shallow mantle Department of Geology and Geophysics, Texas A&M University, College Station, Texas, USA, Department of Geology and • Developing the vertical magnetic Geophysics, Woods Hole Oceanographic Institution, Falmouth, Massachusetts, USA, 3School of Earth and Ocean Sciences, profiling approach for the first time Cardiff University, Cardiff, UK, 4School of Geography, Earth, and Environmental Sciences, University of Plymouth, Plymouth, UK, in 3-D 5Lamont-Doherty Earth Observatory, Columbia University, Palisades, New York, USA Supporting Information: • Supporting Information S1 Abstract Marine magnetic anomalies are a powerful tool for detecting geomagnetic polarity reversals, lithological boundaries, topographic contrasts, and alteration fronts in the oceanic lithosphere. Our aim Correspondence to: here is to detect lithological contacts in fast-spreading lower crust and shallow mantle by characterizing M. Tominaga, magnetic anomalies and investigating their origins. We conducted a high-resolution, near-bottom, vector [email protected] magnetic survey of crust exposed in the Hess Deep “tectonic window” using the remotely operated vehicle (ROV) Isis during RRS James Cook cruise JC21 in 2008. Hess Deep is located at the western tip of the Citation: propagating rift of the Cocos-Nazca plate boundary near the East Pacific Rise (EPR) (2°15′N, 101°30′W). -
Crystal Growth
Crystal Growth • How do single crystals differ from polycrystalline samples? Single crystal specimens maintain translational symmetry over macroscopic distances (crystal dimensions are typically 0.1 mm – 10 cm). • Why would one go to the effort of growing a single crystal? -Structure determination and intrinsic property measurements are preferably, sometimes exclusively, carried out on single crystals. -For certain applications, most notably those which rely on optical and/or electronic properties (laser crystals, semiconductors, etc.), single crystals are necessary. 1 Estimated shares of world crystal production in 1999. (Reprinted from H. J. Scheel, J. Cryst. Growth 211(2000) 1–12. 2 • What factors control the size and purity of single crystals? - Nucleation and Growth. If nucleation rates are slow and growth is rapid, large crystals will result. On the other hand, if nucleation is rapid, relative to growth, small crystals or even polycrystalline samples will result. • What can be done to increase the growth rates? - In order to attain the rapid growth rates needed to grow macroscopic crystals, diffusion coefficients must be large. Hence, crystal growth typically occurs via formation of a solid from another state of matter : (a) Liquid (Melt) ÆSolid (Freezing) (b) Gas (Vapor) Æ Solid (Condensation) (c) Solution Æ Solid (Precipitation) • It should be noted that defect concentrations tend to increase as the growth rate increases. Consequently the highest quality crystals need to be grown slowly. 3 • What can be done to limit the number of nucleation sites? Several techniques are used separately or in combination to induce nucleation of the solid phase at a slow and controlled rate : (a) Slow Cooling of Melts (b) Temperature Gradients (c) Introduction of Seed Crystals 4 Slow cooling of the melt •With congruently melting materials (those which maintain the same composition on melting), one simply melts a mixture of the desired composition then cools slowly (typically 2-10 °C/h) through the melting point.