DOCSLIB.ORG

Single-Photon Avalanche Diodes

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Single-Photon Avalanche Diodes Detectors 64-67_LPx110211_LPX14*_ahx 17.12.2013 9:50 Uhr Seite 64 64l LASER+ PHOTONICS 2014l SENSORS & METROLOGY Example of a SPAD mod- ule: Laser Components Count series of photon counting systems, red and blue enhanced versions with fiber coupling Single-photon avalanche diodes MORE EFFICIENT SINGLE-PHOTON DETECTORS. 25 years ago, no-one could have imagined the importance of single-photon detection in the 21st Century. Today, this technology is a reliable tool for both scientists and engineers for the detec- tion of extremely weak light signals. MIKE HODGES The photomultiplier STEPHANIE GRABHER The photomultiplier tube (PMT) is a variant of the vacuum tube. The PMT makes use of the photoelectric effect and subsequent ingle-photon detectors are used for applications amplification in a secondary electron amplifier section to turn where traditional detectors can no longer discern the a single incident photon into an electrical signal. The (electron) Sdifference between signal and noise. Prominent ap- amplification process is equivalent to an avalanche effect, the plication examples here are quantum cryptography, spec- result being a measureable electrical pulse at the anode of the troscopy, LIDAR, DNA analysis, particle measurements, electron amplifier. However, for this process to succeed, PMTs fluorescence microscopy or detection of single molecules. require the use of very high voltages (1 to 3 kV). A schematic The order of magnitude of the signal intensities involved in this of a PMT is shown in Figure 2. regime make the term ›single-photon detection‹ self-explana- For the detection of single photons, a PMT can be operated in tory. The number of photons per second that correspond to a the so-called Geiger mode. The restriction here is that the very particular optical power is given by the following formula: high transient currents that follow each photon event must first again return to zero (the so-called ›dead time‹) before the N(λ)=5.03×1015⋅λ⋅P detector is ready to detect the next photon. Assorted cathode materials with varying spectral properties are where P is the optical power in watts and λ is the wavelength employed depending on the spectral window of interest. While in nanometers. Accordingly, 1 fW of optical power at a wave- these materials were originally most sensitive in the UV and length of 405 nm corresponds to around 2000 photons per blue regions of the spectrum, PMTs today have a greatly second (Figure 1). improved IR performance. PMTs also usu- Although the application areas men- CONTACT ally exhibit a relatively large detection area tioned above differ greatly, the common (up to 75 mm diameter), although these aspect to all is the demand for a high- LASER COMPONENTS GMBH must then also be cooled in order to re- efficiency single-photon detector with 82140 Olching, Germany duce dark noise to an absolute minimum. minimum background noise. Various de- Tel. +49 8142 2864765 PMTs are very sensitive to external mag- [email protected] tector technologies well suited to this www.lasercomponents.com netic fields and are also inclined to exhibit purpose are discussed in the following. so-called ›afterpulsing‹ – an effect in- 08/19 / V02 IF lc/publications/single-photon-avalanche-diodes Internet-PDF-Datei. Diese PDF Datei enthält das Recht zur unbeschränkten Intranet- und Internetnutzung,© CARL HANSER sowie VERLAG, zur MUNICH 1 Verbreitung über elektronische Verteiler. Eine Verbreitung in gedruckter Form ist mit dieser PDF-Datei nicht gestattet. Germany & Other Countries France United Kingdom Nordic Countries USA Laser Components GmbH Laser Components S.A.S. Laser Components (UK) Ltd. Laser Components Nordic AB Laser Components USA, Inc. Tel: +49 8142 2864 – 0 Tel: +33 1 39 59 52 25 Tel: +44 1245 491 499 Tel: +46 31 703 71 73 Tel: +1 603 821 – 7040 Fax: +49 8142 2864 – 11 Fax: +33 1 39 59 53 50 Fax: +44 1245 491 801 Fax: +46 31 703 71 01 Fax: +1 603 821 – 7041 [email protected] [email protected] [email protected] [email protected] [email protected] www.lasercomponents.com www.lasercomponents.fr www.lasercomponents.co.uk www.lasercomponents.se www.laser-components.com Detectors 64-67_LPx110211_LPX14*_ahx 17.12.2013 9:50 Uhr Seite 65 SENSORS & METROLOGYl LASER+ PHOTONICS 2014l 65 gion, rather than being amplified in an electron amplifier section of a conven- 108 tional PMT. The principal advantage of 107 this approach is the almost non-exis- tence of afterpulsing effects, with addi- 6 10 tional plus factors being the large active 105 area (on the mm scale) and the good time resolution. The down side is the 4 10 awkward handling requirements for 103 these systems (over 8000 V at the pho- tocathode), the limited spectral range 2 10 405 nm and the need for low-noise electronics number of photons / second 670 nm 810 nm 101 downstream of the detector itself in or- 1550 nm der to ensure low dark count rates. 100 10–18 10–17 10–16 10–15 10–14 10–13 10–12 10–11 Single-photon optical power [W] avalanche diodes 1 Wavelength-dependent correlation between optical power and Contrary to conventional pin-photo- the number of incident photons diodes, avalanche photodiodes make © LASER+PHOTONICS use of an avalanche breakdown to pro- vide amplification (and thus high sensi- duced by the outgoing electrical pulse that does not correspond tivity) internally. A requisite for this process is a high reverse bias, to the incoming (optical) signal. extending the absorption region in the APD and thus enabling sufficient electron-hole pair production via impact ionization. APD array These secondary electrons are drawn through the transit region Photodiodes also make use of the photoelectric effect for the gen- by the high voltage, causing further impact ionizations (multipli- eration of electron-hole pairs and thus lead to the corresponding cation) and thus yielding the desired avalanche effect (Figure 3). photocurrent. Recently, ›multipixel- avalanche photodiodes‹ have Conventional APDs are operated below the breakdown voltage, been developed, based on CMOS technology and also utilizing but if the reverse bias voltage is too low, (frictional/collisional) the Geiger mode for operation. Also known as ›silicon photomul- losses in the semiconductor material cause the avalanche effect tipliers‹, these detectors are noted for their compact form factor, to be too strongly damped. APDs can also be operated above low cost, low voltage requirements and large active area togeth- their breakdown voltage (Geiger mode) and are then specially er with good time resolution. However, still today there are un- designed to promote the avalanche effect. With an internal am- solved issues for these arrays, for example, the fact that the dark plification of up to 108 these devices are capable of detecting count rate lies several orders of magnitude higher than for con- single photon events – hence the term single-photon avalanche ventional Geiger-mode single-photon avalanche diodes. They al- diodes (SPADs). so exhibit lower quantum efficiency at longer wavelengths. This mode of operation does however lead to high currents with- in the SPAD, and these must be properly controlled if the device PMT-APD hybrid is not to remain conducting or should not become damaged. In More recently, the field has seen the introduction of PMT-APD the simplest case this is achieved through the use of a series hybrid systems – a photon is incident on a photocathode mate- resistor (passive quenching) – the voltage drop across the re- rial and frees an electron that then migrates through an APD re- sistor is responsible for the SPAD returning to its blocking state, photon cathode dynode electron R signal a output emission electrons RRRR R accelerating voltage 2 Schematic illustration of a photomultiplier tube (PMT) © LASER+PHOTONICS 08/19 / V02 IF lc/publications/single-photon-avalanche-diodes WWW.LASER-PHOTONIK.DEInternet-PDF-Datei. Diese PDF Datei enthält das Recht zur unbeschränkten Intranet- und Internetnutzung, sowie zur 2 Verbreitung über elektronische Verteiler. Eine Verbreitung in gedruckter Form ist mit dieser PDF-Datei nicht gestattet. Germany & Other Countries France United Kingdom Nordic Countries USA Laser Components GmbH Laser Components S.A.S. Laser Components (UK) Ltd. Laser Components Nordic AB Laser Components USA, Inc. Tel: +49 8142 2864 – 0 Tel: +33 1 39 59 52 25 Tel: +44 1245 491 499 Tel: +46 31 703 71 73 Tel: +1 603 821 – 7040 Fax: +49 8142 2864 – 11 Fax: +33 1 39 59 53 50 Fax: +44 1245 491 801 Fax: +46 31 703 71 01 Fax: +1 603 821 – 7041 [email protected] [email protected] [email protected] [email protected] [email protected] www.lasercomponents.com www.lasercomponents.fr www.lasercomponents.co.uk www.lasercomponents.se www.laser-components.com Detectors 64-67_LPx110211_LPX14*_ahx 17.12.2013 9:50 Uhr Seite 66 66l LASER+ PHOTONICS 2014l SENSORS & METROLOGY ciency of the entire module is also affected by that of the driver electronics. For this reason the data sheets for p+ SPAD modules usually specify the photon detection ef- ficiency (Pd) – that is, the probability that an incident pho- E = hν ton results in an electrical pulse at the output of the i– stimulation by impact ionisation module. When designing a SPAD, it is important to understand that both the detection efficiency and the dark count rate complete depleted intrinsic i-layer are dependent on the bias voltage applied to the APD. As previously mentioned, the APD is operated in Geiger mode, so above the breakdown voltage (Vop>Vbr). The difference between Vop and Vbr is called overvoltage, and is chosen so as to optimize particular parameters such p as the detection efficiency. An optimization is, however, only possible when the APD at the heart of each mod- + ule is of sufficient quality.
Load more

Recommended publications
  • Al0.48 In0.52 As Superlattice Avalanche Photodiodes On
    www.nature.com/scientificreports OPEN Engineering of impact ionization characteristics in ­In0.53Ga0.47As/ Al0.48In0.52As superlattice avalanche photodiodes on InP substrate S. Lee1, M. Winslow2, C. H. Grein2, S. H. Kodati1, A. H. Jones3, D. R. Fink1, P Das4, M. M. Hayat4, T. J. Ronningen1, J. C. Campbell3 & S. Krishna1* We report on engineering impact ionization characteristics of ­In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three diferent SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as ­Al0.4Ga0.07In0.53As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k-values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k-value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k-value of 0.22, which is lower than the k-value of the RA. The 6 ML SL exhibits even lower k-value than the 8 ML SL, indicating that the shorter period of the SL, the lower k-value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application.
    [Show full text]
  • Leds As Single-Photon Avalanche Photodiodes by Jonathan Newport, American University
    LEDs as Single-Photon Avalanche Photodiodes by Jonathan Newport, American University Lab Objectives: Use a photon detector to illustrate properties of random counting experiments. Use limiting probability distributions to perform statistical analysis on a physical system. Plot histograms. Condition a detector’s signal for further electronic processing. Use a breadboard, power supply and oscilloscope to construct a circuit and make measurements. Learn about semiconductor device physics. Reading: Taylor 3.2 – The Square-Root Rule for a Counting Experiment pp. 48-49 Taylor 5.1-5.3 – Histograms and the Normal Distribution pp. 121-135 Taylor Ch. 11 – The Poisson Distribution pp. 245-254 Taylor Problem 5.6 – The Exponential Distribution p. 155 Experiment #1: Lighting an LED A Light-Emitting Diode is a non-linear circuit element that can produce a controlled amount of light. The AND113R datasheet shows that the luminous intensity is proportional to the current flowing through the LED. As illustrated in the IV curve shown below, the current flowing through the diode is in turn proportional to the voltage across the diode. Diodes behave like a one-way valve for current. When the voltage on the Anode is more positive than the voltage on the Cathode, then the diode is said to be in Forward Bias. As the voltage across the diode increases, the current through the diode increases dramatically. The heat generated by this current can easily destroy the device. It is therefore wise to install a current-limiting resistor in series with the diode to prevent thermal runaway. When the voltage on the Cathode is more positive than the voltage on the Anode, the diode is said to be in Reverse Bias.
    [Show full text]
  • Avalanche Photodiodes Arrays
    Rochester Institute of Technology RIT Scholar Works Theses 2004 Avalanche photodiodes arrays Daniel Ma Follow this and additional works at: https://scholarworks.rit.edu/theses Recommended Citation Ma, Daniel, "Avalanche photodiodes arrays" (2004). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. Avalanche Photodiodes Arrays By Daniel Ma B.S. College of Engineering, Rochester Institute of Technology (1998) A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in the Chester F. Carlson Center for Imaging Science of the College of Science Rochester Institute of Technology August 2004 Signature of the Author __D_a_n_i e_1 _M_a_______ _ Accepted by Harvey E. Rhody .y/h~~s- ) Coordinator, M.S. Degree Program Date CHESTERF.CARLSON CENTER FOR IMAGING SCIENCE COLLEGE OF SCIENCE ROCHESTER INSTITUTE OF TECHNOLOGY ROCHESTER, NEW YORK CERTIFICATE OF APPROVAL M.S. DEGREE THESIS The M.S. Degree Thesis of Daniel Ma has been examined and approved by the thesis committee as satisfactory for the thesis requirement for the Master of Science degree Zoran Ninkov Dr. Zoran Ninkov, Thesis Advisor Lynn Fuller Dr. Lynn Fuller Jonathan S. Arney Dr. Jon Arney Date ii THESIS RELEASE PERMISSION ROCHESTER INSTITUTE OF TECHNOLOGY COLLEGE OF SCIENCE CHESTER F. CARLSON CENTER FOR IMAGING SCIENCE Title of Thesis: Avalanche Photodiode Arrays I, Daniel Ma, hereby grant permission to the Wallace Memorial Library of R.I.T.
    [Show full text]
  • Avalanche Photodiode a User Guide Understanding Avalanche Photodiode for Improving System Performance
    High performance sensors APPLICATION NOTE Avalanche photodiode A User Guide Understanding Avalanche photodiode for improving system performance Introduction Contents Avalanche photodiode detectors (APD) APD structures have and will continue to be used in APD noise many diverse applications such as laser Photon counting technique range finders, data communications or photon correlation studies. This paper discusses APD structures, critical Applications performance parameter and excess noise Light detection factor. Laser range finder For low-light detection in the 200- to Photon counting 1150-nm range, the designer has three Datacomm basic detector choices - the silicon PIN Optical Tomography detector, the silicon avalanche LIDAR photodiode (APD) and the photomultiplier Fluorescence detection tube (PMT). Particle sizing APDs are widely used in instrumentation and aerospace applications, offering a combination of high speed and high sensitivity unmatched by PIN detectors, and quantum efficiencies at >400 nm unmatched by PMTs. www.optoelectronics.perkinelmer.com APPLICATION NOTE Table of Contents What is an Avalange photodiode 3 Selecting an APD 5 Excess Noise Factor 6 Geiger Mode 7 Applications 8 www.optoelectronics.perkinelmer.com Avalanche photodiode 2 APPLICATION NOTE What is an Avalanche Photodiode? APD Structures In order to understand why more than one APD structure exists, it is important to appreciate the design trade-offs that must be accommodated by the APD designer. The ideal APD would have zero dark noise, no excess noise, broad spectral and frequency response, a gain range from 1 to 106 or more, and low cost. More simply, an ideal APD would be a good PIN photodiode with gain! In reality however, this is difficult to achieve because of the need to trade-off conflicting design requirements.
    [Show full text]
  • 1. with Schematic Representation Explain the Working Principle of Pin Photo Diode
    Optical Communications 1. With schematic representation explain the working principle of pin photo diode. Ans: PIN Photodiode PIN diode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 6.1.1. Sufficient reverse voltage is applied so as to keep intrinsic region free from carriers, so its resistance is high, most of diode voltage appears across it, and the electrical forces are strong within it. The incident photons give up their energy and excite an electron from valance to conduction band. Thus a free electron hole pair is generated, these are called as photo carriers. These carriers are collected across the reverse biased junction resulting in rise in current in external circuit called photocurrent. In the absence of light, PIN photodiodes behave electrically just like an ordinary rectifier diode. If forward biased, they conduct large amount of current. PIN detectors can be operated in two modes, Photovoltaic and photoconductive. In photovoltaic mode, no bias is applied to the detector. In this case the detector works very slow, and output is approximately logarithmic to the input light level. Real world fiber optic receivers never use the photovoltaic mode. In photoconductive mode, the detector is reverse biased. The output in this case is a current that is very linear with the input light power. The intrinsic region somewhat improves the sensitivity of the device. It does not provide internal gain. The combination of different semiconductors operating at different wavelengths allows the selection of material capable of responding to the desired operating wavelength.
    [Show full text]
  • Mid-Wavelength Infrared Avalanche Photodetector with Alassb/Gasb
    www.nature.com/scientificreports OPEN Mid‑wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice Jiakai Li, Arash Dehzangi, Gail Brown & Manijeh Razeghi* In this work, a mid‑wavelength infrared separate absorption and multiplication avalanche photodiode (SAM‑APD) with 100% cut‑of wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb‑based SAM‑APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi‑quantum well structure based on AlAsSb/GaSb H‑structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under ‑14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM‑APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefcients were derived and the large diference between their value was observed. The carrier ionization ratio for the MWIR SAM‑APD device was calculated to be ~ 0.097 at 200 K. Mid-wavelength infrared (MWIR) photodetectors which can operate under the low fux conditions are of great interest for long-range military and astronomical applications 1,2. In most of these applications there is a need to increase the capability of the system to detect light in a low photon fux situation. Terefore, gain-based devices such as heterojunction phototransistors (HPTs) and avalanche photodiodes (APDs) are used to achieve the necessary photoresponse when the incoming photon fux is low 3–5. Compared with the HPTs, the APDs can amplify weak signals without the relatively more complicated HPT device structure6.
    [Show full text]
  • Infrared Avalanche Photodiode Detectors
    View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Defence Science Journal Defence Science Journal, Vol. 67, No. 2, March 2017, pp. 159-168, DOI : 10.14429/dsj.67.11183 2017, DESIDOC Infrared Avalanche Photodiode Detectors Anand Singh and Ravinder Pal Solid State Physics Laboratory, Delhi - 110 054, India E-mail: [email protected] ABSTRACT This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at - 8 V bias is measured in n+-ν-p+ detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time. Keywords: Avalanche photodiode detectors; APD; HgCdTe; Gain-band width product; Excess noise 1. INTRODUCTION bias with low noise and high bandwidth1-3. In general, APD Detection of camouflaged and low temperature/emissivity operates below the break down voltage of the semiconductor targets particularly at long range or in the battle field/humid and is known as the linear amplifier for the input optical signal, environments become a challenge.
    [Show full text]
  • Spaceborne,Low-Noise,Single-Photon Detection for Satellite-Based Quantum Communications
    Spaceborne,low-noise,single-photon detection for satellite-based quantum communications MENG YANG,1,2 FEIHU XU,1,2 JI-GANG REN,1,2 JUAN YIN,1,2 YANG LI,1,2 YUAN CAO,1,2 QI SHEN,1,2 HAI-LIN YONG,1,2 LIANG ZHANG,2,3 SHENG-KAI LIAO,1,2,4 JIAN-WEI PAN,1,2 AND CHENG-ZHI PENG1,2,5 1Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China 2Chinese Academy of Sciences (CAS) Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China 3Key Laboratory of Space Active Opto-Electronic Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 4e-mail: [email protected] 5e-mail: [email protected] Abstract: Single-photon detectors (SPDs) play important roles in highly sensitive detection applications, such as fluorescence spectroscopy, remote sensing and ranging, deep space optical communications, elementary particle detection, and quantum communications. However, the adverse conditions in space, such as the increased radiation flux and thermal vacuum, severely limit their noise performances, reliability, and lifetime. Herein, we present the first example of spaceborne, low-noise, high reliability SPDs, based on commercial off-the-shelf (COTS) silicon avalanche photodiodes (APD). Based on the high noise-radiation sensitivity of silicon APD, we have developed special shielding structures, multistage cooling technologies, and configurable driver electronics that significantly improved the COTS APD reliability and mitigated the SPD noise-radiation sensitivity.
    [Show full text]
  • Silicon–Germanium Receivers for Short-Wave
    Nanophotonics 2021; 10(3): 1059–1079 Review Daniel Benedikovic*, Léopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Xavier Le Roux, Carlos Alonso-Ramos, Éric Cassan, Delphine Marris-Morini, Jean-Marc Fédéli, Frédéric Boeuf, Bertrand Szelag and Laurent Vivien Silicon–germanium receivers for short-wave- infrared optoelectronics and communications High-speed silicon–germanium receivers (invited review) https://doi.org/10.1515/nanoph-2020-0547 nanophotonic devices. Along with recent advances in sili- Received September 28, 2020; accepted November 25, 2020; con–germanium-based lasers and modulators, short- published online December 8, 2020 wave-infrared receivers are also key photonic chip ele- ments to tackle cost, speed and energy consumption Abstract: Integrated silicon nanophotonics has rapidly challenges of exponentially growing data traffics within established itself as intriguing research field, whose outlets next-generation systems and networks. Herein, we provide impact numerous facets of daily life. Indeed, nano- a detailed overview on the latest development in nano- photonics has propelled many advances in optoelec- photonic receivers based on silicon and germanium, tronics, information and communication technologies, including material processing, integration and diversity of sensing and energy, to name a few. Silicon nanophotonics device designs and arrangements. Our Review also em- aims to deliver compact and high-performance compo- phasizes surging applications in optoelectronics and nents based on semiconductor chips leveraging mature communications and concludes with challenges and per- fabrication routines already developed within the modern spectives potentially encountered in the foreseeable microelectronics. However, the silicon indirect bandgap, future. the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication Keywords: group-IV nanophotonicss; integrated opto- wavebands hamper the realization of essential function- electronics and communications; optical photodetector.
    [Show full text]
  • A Compact Model for Si-Ge Avalanche Photodiodes
    A Compact Model for Si-Ge Avalanche Photodiodes Wang, Binhao; Huang, Zhihong; Zeng, Xiaoge; Sorin, Wayne V.; Liang, Di; Beausoleil, Raymond G. Hewlett Packard Labs HPE-2018-05 Keyword(s): Avalanche photodiodes (APDs); Modeling; Optical communication Abstract: A compact Si-Ge avalanche photodiode (APD) model, including carrier transit time and electrical parasitics, accurately captures electrical and optical dynamics in a wide range of gain. Excellent matching between simulated and measured 30 Gb/s eye diagrams is presented. External Posting Date: May 18, 2018 [Fulltext] Internal Posting Date: May 18, 2018 [Fulltext] Copyright 2018 Hewlett Packard Enterprise Development LP A Compact Model for Si–Ge Avalanche Photodiodes Binhao Wang*, Zhihong Huang, Xiaoge Zeng, Rui Wu, Wayne V. Sorin, Di Liang, Raymond G. Beausoleil Hewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA, 94304, USA *[email protected] Abstract— A compact Si-Ge avalanche photodiode (APD) each different gain-operation regime. For data communication, circuit model, including carrier transit time and electrical APDs are often operated above gain of 5 to enhance the APD parasitics, is demonstrated and accurately captures electrical and receiver sensitivity, but it also operates below the maximum optical dynamics in a wide range of multiplication gain. Excellent gain to avoid a poor signal-to-noise ratio and a large gain matching between simulated and measured 30 Gb/s eye diagrams fluctuation. Previous models for III-V or Si-Ge APDs lack is presented. accurate modeling in such a broad range of multiplication gain by considering both device electrical parasitics or carrier transit Keywords—Avalanche photodiodes (APDs); Modeling; Optical time dynamics [7, 8].
    [Show full text]
  • Silicon Avalanche Photodiodes Photodiodes Avalanche Silicon DATASHEET
    SENSOR SOLUTIONS SOLUTIONS SENSOR DATASHEET Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits PerkinElmer’s C30902EH avalanche without fear of endangering detector photodiode is fabricated with a double- stability. • High quantum efficiency of diffused “reach-through” structure. This 77% typical @ 830 nm structure provides high responsivity • C30902SH and C30921SH The C30902SH and C30921SH are can be operated in “Geiger” between 400 and 1000 nm as well as selected C30902EH and C30921EH mode extremely fast rise and fall times at all photodiodes having extremely low noise • Hermetically sealed package wavelengths. The responsivity of the and bulk dark-current. They are intended • Low Noise at room temperature device is independent of modulation for ultra-low light level applications • High responsivity – internal frequency up to about 800 MHz. The (optical power less than 1 pW) and can avalanche gains in excess of detector chip is hermetically-sealed be used in either their normal linear mode 150 behind a flat glass window in a modified • Spectral response range – (VR<VBR) at gains up to 250 or greater, or (10% points) 400 to 1000 nm TO-18 package. The useful diameter of as photon counters in the “Geiger” mode • Time response – typically 0.5 ns the photosensitive surface is 0.5 mm. (VR > VBR) where a single photoelectron • Wide operating temperature may trigger an avalanche pulse of about range - -40°C to +70°C 8 PerkinElmer’s C30921EH is packaged in 10 carriers. In this mode, no amplifiers • RoHS-compliant a lightpipe TO-18 which allows efficient are necessary and single-photon coupling of light to the detector from detection probabilities of up to Applications either a focused spot or an optical fiber approximately 50% are possible.
    [Show full text]
  • 06 - Photomultiplier Tubes and Photodiodes
    06 - Photomultiplier tubes and photodiodes Jaroslav Adam Czech Technical University in Prague Version 2 Jaroslav Adam (CTU, Prague) DPD_06, Photomultiplier tubes and photodiodes Version 2 1 / 38 The Photomultiplier (PM) tube Detection of very weak scintillation light Provide electrical signal Can be also done with silicon photodiodes, but PM are most widely used Characterized by spectral sensitivity Jaroslav Adam (CTU, Prague) DPD_06, Photomultiplier tubes and photodiodes Version 2 2 / 38 Structure of PM tube Jaroslav Adam (CTU, Prague) DPD_06, Photomultiplier tubes and photodiodes Version 2 3 / 38 Photoemission process Conversion of incident light to photelectron in sequence of processes (1) photon absorbed, it’s energy transfered to electron in material (2) Migration of electron to the surface of material (3) Escape of electron from the surface of photocathode Must overcome potential barrier (work function) of the material Jaroslav Adam (CTU, Prague) DPD_06, Photomultiplier tubes and photodiodes Version 2 4 / 38 Spontaneous electron emission Thermionic noise by the surface barrier Thermal kinetic energy of conduction electrons may be sufficient to overcome the barrier Average of thermal energy is 0.025 eV, but the tail of the distribution reaches higher energies Jaroslav Adam (CTU, Prague) DPD_06, Photomultiplier tubes and photodiodes Version 2 5 / 38 Fabrication of photocathodes Opaque - thickness > maximal escape depth Semitransparent - deposited on transparent backing Important uniformity of thickness Jaroslav Adam (CTU, Prague) DPD_06,
    [Show full text]