Inelastic Neutron Scattering Studies of Magnetic Fluctuations in the Tetragonal and Collapsed Tetragonal Phases of Cafe2as2
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COMMUNICATIONS dihydroxynaphthalene or 3,4-dihydroxybenzoate (extinction of blue qualify for Zintl phases when a broader definition is used. The l fluorescence at em 440 nm upon oxidation to the quinone). Nor- latter includes compounds of transition metals with filled or adrenaline reacts similarly to adrenaline down to pH 5. Adreno- empty d shells, that is the late transition metals of the Ni, Cu, chrome (2) is unstable and polymerizes to brown and finally insoluble [2] black products upon prolonged standing in solution. and Zn groups, and the early transition elements of the Ti, V, [14] a) M. Simmel, M. Turunen, J. Piironen, T. Vaara, VTT Symp. 1991, 122, and Cr groups at maximum formal oxidation states.[3] There 145 ± 161; b) R. J. Wodzinski, A. H. J. Ullah, Adv. Appl. Microbiol. are only two Zintl compounds containing a transition metal 1996, 42, 263 ± 302. with partially filled d shell, both based on manganese, [15] B.-L. Liu, A. Rafiq, Y.-M. Tzeng, A. Rob, Enzyme Microbiol. Technol. 1998, 22, 415 ± 424. (AE)14MnPn11 (AE alkaline-earth metal, Pn pnictogen) [4] [16] A. H. J. Ullah, D. M. Gibson, Prep. Biochem. 1987, 17, 63 ± 91. and Sr21Mn4Sb18 . Perhaps only they should be called true [17] Several kits for the titration of inorganic phosphate based on the ™transition metal Zintl phases∫ although the name is contra- reaction with ammonium molybdate are available commercially. dictory in itself. All but two of the d0 compounds contain Methyl-umbelliferyl phosphate and 4-nitrophenyl phosphate are isolated tetrahedra [MPn ]nÀ (M Nb, Ta, W, Ti).[5] The two general fluorogenic and chromogenic substrates for phosphatases 4 but do not enable phytases to be distinguished from other phospha- exceptions are Na5HfAs3 with dimers of edge-sharing tetra- 10À tases, in contrast to assays based on phytic acid. -
The Reaction of Pyridine Witb Sulfur Dioxide In
The Reaction of Pyridine witb Sulfur Dioxide in Benzoyl Chloride (55 letters) J THE REACTION OF PYRIDINE WITH SULFUR DIOXIDE IN BENZOYL CHLORIDE by James R. Watson A Thesis submitted to the Faculty of Graduate Studies and Research in partial fulfilment of the requirements for the degree of Master of Science Department of Chemistry McGill University Montreal, Canada August, 1965 • - i - ACKNOWLEDGMENTS I wish to thank Dr. J. T. Edward for his helpful guidance during my stay at McGill University and in the preparation of this manuscript • • TABLE OF CONTENTS ACKNOWLEDGMENTS. • . • • . • . • i LIST OF FIGURES........................................ ii LIST OF TABLES.. • • . • • . • . • . • 1 v INTRODUCTION•••••••••••••••·•·••••••••••••••••••••••••• 1 A. Reactions of Acylpyridinium Halides.............. 2 B. Partial Reduction to Dihydro and Tetrahydro Pyridine.................................. 6 C. Ring Opening Reactions........................... 8 EXPERIMENTAL. • • • • . • . • • • . • . • • • • • . • • . • • • . • • • . • 11 A. Reagents............... .. ... .. 11 B. Reaction of Pyridine with Sulfur Dioxide in Benzoyl Chloride to form Compound A.............. 11 C. Measurement of the Dissociation Constant of Compound A....................................... 15 D. Attempted Reaction of Pyridine, Benzoyl Chloride and Sodium Sulfite............................... 18 E. Reaction of 2-Picoline with Sulfur Dioxide in Benzoyl Chloride ta form Compound B.............. 18 F. Reaction of 2,4-Lutidine with Sulfur Dioxide in Benzoyl Chloride to form -
Structure-Property Relationships of Layered Oxypnictides
AN ABSTRACT OF THE DISSERTATION OF Sean W. Muir for the degree of Doctor of Philosophy in Chemistry presented on April 17, 2012. Title: Structure-property Relationships of Layered Oxypnictides Abstract approved:______________________________________________________ M. A. Subramanian Investigating the structure-property relationships of solid state materials can help improve many of the materials we use each day in life. It can also lead to the discovery of materials with interesting and unforeseen properties. In this work the structure property relationships of newly discovered layered oxypnictide phases are presented and discussed. There has generally been worldwide interest in layered oxypnictide materials following the discovery of superconductivity up to 55 K for iron arsenides such as LnFeAsO1-xFx (where Ln = Lanthanoid). This work presents efforts to understand the structure and physical property changes which occur to LnFeAsO materials when Fe is replaced with Rh or Ir and when As is replaced with Sb. As part of this work the solid solution between LaFeAsO and LaRhAsO was examined and superconductivity is observed for low Rh content with a maximum critical temperature of 16 K. LnRhAsO and LnIrAsO compositions are found to be metallic; however Ce based compositions display a resistivity temperature dependence which is typical of Kondo lattice materials. At low temperatures a sudden drop in resistivity occurs for both CeRhAsO and CeIrAsO compositions and this drop coincides with an antiferromagnetic transition. The Kondo scattering temperatures and magnetic transition temperatures observed for these materials can be rationalized by considering the expected difference in N(EF)J parameters between them, where N(EF) is the density of states at the Fermi level and J represents the exchange interaction between the Ce 4f1 electrons and the conduction electrons. -
Quaternary Ammonium Compositions and Their Uses
Europaisches Patentamt (19) European Patent Office Office europeen des brevets (11) EP 0 726 246 A1 (12) EUROPEAN PATENT APPLICATION (43) Date of publication: (51) |nt. CI.6: C07C 21 1/63, C01 B 33/44, 14.08.1996 Bulletin 1996/33 C1 p 1/62j Q21 C 5/02, (21) Application number: 96101900.7 A61 K 7/50 //C09D7/12 (22) Date of filing: 09.02.1996 (84) Designated Contracting States: • Campbell, Barbara DE DK ES FR GB IT NL Bristol, PA 1 9007 (US) • Chiavoni, Araxi (30) Priority: 10.02.1995 US 385295 Trenton, N J 0861 0 (US) • Magauran, Edward (71 ) Applicant: RHEOX INTERNATIONAL, INC. Westhampton, NJ 08060 (US) Hightstown, New Jersey 08520 (US) (74) Representative: Strehl Schubel-Hopf Groening & (72) Inventors: Partner • Cody, Charles, Dr. Maximilianstrasse 54 Robbinsville, NJ 08691 (US) 80533 Munchen (DE) (54) Quaternary ammonium compositions and their uses (57) Quaternary ammonium compositions are described which are made using diluents including soya bean oil, caster oil, mineral oils, isoparaffin/naphthenic and coconut oil. Such diluents remain as diluents in the final product and generally have a vapor pressure of 1mm of Hg or less at 25°C, and are liquid at ambient temperature. The quaternary/ammonium diluent com- positions have low volatile organic compound emission rates and high flash points, and can be tailored to partic- ular applications. Such applications include use a fabric softeners, cosmetics ingredients, deinking additives, surfactants, and reaction materials in the manufacture of organoclays. < CO CM CO CM o Q_ LU Printed by Rank Xerox (UK) Business Services 2.13.0/3.4 EP 0 726 246 A1 Description BACKGROUND OF THE INVENTION 5 1 . -
Khatiwada-Dissertation-2019
©Copyright by Devendra Khatiwada 2019 All Rights Reserved Fabrication and Optimization of Single-Junction GaAs Thin Film Solar Cells on Epi-ready Flexible Metal Tapes for Low-cost Photovoltaics A Dissertation Presented to the Faculty of the Department of Mechanical Engineering University of Houston In Partial Fulfillment for the Requirements of the Degree Doctor of Philosophy in Materials Science and Engineering by Devendra Khatiwada August 2019 Fabrication and Optimization of Single-Junction GaAs Thin Film Solar Cells on Epi-ready Flexible Metal Tapes for Low-cost Photovoltaics Devendra Khatiwada Approved: Chair of the Committee Venkat Selvamanickam, Professor, Mechanical Engineering Committee Members: Haleh Ardebili, Associate Professor, Mechanical Engineering James K.Meen, Research Associate Professor, Chemistry Jae -Hyun Ryou, Associate Professor, Mechanical Engineering M e c Alamgir Karim, Associate Professor, h Material Science and Engineering a n i c Suresh K.Khator, Associate Dean, Alamgir Karim, Professor and a Cullen College of Engineering Director, Material Science and l Engineering E n g ii i n e e r Acknowledgements Firstly I would like to acknowledge my thesis advisor professor Venkat Selvamanickam for his persistent help, guidance and offering me opportunities to involve in various interesting project. The last four years has been an outstanding experience to work with him. His patience in research, scientific knowledge, hard work and technical skills always inspired me to continuously work in different projects. I am very lucky to have him as my advisor. It was a great pleasure to work with the excellent members in our research group. Special thanks to Dr.Pavel Dutta, Dr.Monika Rathi, Sicong Son, Carlos Favela, Sahil Sharma, Sara Pouladi for their great help during my research work. -
Synthesis, Structure and Properties of Layered Phosphide Nitrides Akth2mn4p4n2 (Ak = Rb, Cs)
Synthesis, structure and properties of layered phosphide nitrides AkTh2Mn4P4N2 (Ak = Rb, Cs) Bai-Zhuo Li,a Si-Qi Wu,a Zhi-Cheng Wang,a Cao Wang,b and Guang-Han Cao*,a,c a Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Devices, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China b School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China c Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China Keywords Intercalations | Synthetic methods | Physical properties | Phosphide nitrides | Electronic structures Main observation and conclusion We report the design, synthesis, structure, and properties of two complex layered phosphide nitrides, AkTh2Mn4P4N2 (Ak = Rb, Cs), which contain anti-fluorite-type [Mn2P2] bilayers separated by fluorite-type [Th2N2] layers as a result of the intergrowth between AkMn2P2 and ThMnPN. The new compounds are featured with an intrinsic hole doping associated with the interlayer charge transfer and a built-in chemical pressure from the [Th2N2] layers, both of which are reflected by the changes in the lattice and the atomic position of phosphorus. The measurements of magnetic susceptibility, electrical resistivity, and specific heat indicate existence of local moments as well as itinerant electrons in relation with d-p hybridizations. The expected dominant antiferromagnetic interactions with enhanced d-p hybridizations were demonstrated by the first-principles calculations only when additional Coulomb repulsions are included. The density of states at the Fermi level derived from the specific-heat analysis are 3.5 and 7.5 times of the calculated ones for Ak = Rb and Cs, respectively, suggesting strong electron correlations in the title compounds. -
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Z. Kristallogr. 226 (2011) 435–446 / DOI 10.1524/zkri.2011.1363 435 # by Oldenbourg Wissenschaftsverlag, Mu¨nchen Structural chemistry of superconducting pnictides and pnictide oxides with layered structures Dirk JohrendtI, Hideo HosonoII, Rolf-Dieter HoffmannIII and Rainer Po¨ttgen*, III I Department Chemie und Biochemie, Ludwig-Maximilians-Universita¨t Mu¨nchen, Butenandtstraße 5–13 (Haus D), 81377 Mu¨nchen, Germany II Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan III Institut fu¨r Anorganische und Analytische Chemie, Universita¨t Mu¨nster, Corrensstraße 30, 48149 Mu¨nster, Germany Received October 29, 2010; accepted February 6, 2011 Pnictide / Pnictide oxide / Superconductivity / for hydride formation of CeRuSi ! CeRuSiH [6] and Intermetallics / Group-subgroup relation CeRuGe ! CeRuGeH [7]. The crystal chemical data of the huge number of ZrCuSiAs materials have recently Abstract. The basic structural chemistry of supercon- been reviewed [8]. ducting pnictides and pnictide oxides is reviewed. Crystal Although the basic crystallographic data of the many chemical details of selected compounds and group sub- ThCr2Si2 and ZrCuSiAs type compounds are known for group schemes are discussed with respect to phase transi- several years, especially for the ZrCuSiAs family, systema- tions upon charge-density formation, the ordering of va- tic property studies have been performed only recently. cancies, or the ordered displacements of oxygen atoms. These investigations mainly focused on p-type transparent Furthermore, the influences of doping and solid solutions semiconductors like LaCuSO (for a review see [9]) or the on the valence electron concentration are discussed in or- colored phosphide and arsenide oxides REZnPO [10] and der to highlight the structural and electronic flexibility of REZnAsO [11]. -
STRUCTURAL, ELECTRONIC PROPERTIES and the FEATURES of CHEMICAL BONDING in LAYERED 1111-OXYARSENIDES Larhaso and Lairaso: AB INITIO MODELING
The preprint. Submitted to: Journal of Structural Chemistry STRUCTURAL, ELECTRONIC PROPERTIES AND THE FEATURES OF CHEMICAL BONDING IN LAYERED 1111-OXYARSENIDES LaRhAsO AND LaIrAsO: AB INITIO MODELING V.V. Bannikov, I.R. Shein Institute of Solid State Chemistry, Ural Branch Of Russian Academy of Sciences, 620990, Ekaterinburg, Pervomayskaya St., 91, Russia E-mail: [email protected] The comparative study of structural, electronic properties, topology of the Fermi surface, and the features of chemical bonding in layered 1111-oxyarsenides LaRhAsO and LaIrAsO has been performed based on the results of ab initio modeling of their electronic structure. It was established that only weak sensitivity with respect both to electron and hole doping is expected for LaIrAsO being non-magnetic metal, however, the Rh-containing compound should be characterized with weak band magnetism, and the hole doping is expected to be able to move its ground state away from the boundary of magnetic instability. The mentioned feature allows to consider LaRhAsO oxyarsenide as a possible “electron analogue” of LaFeAsO compound being the initial phase for the layered FeAs-superconductors. Keywords: 1111-phases, oxyarsenides, doping, band structure, Fermi surface, chemical bonding INTRODUCTION The oxychalcogenides and oxypnictides with common chemical formula Me(a)Me(b)(Ch/Pn)O (where Me(a) is atom of Y, La, Bi or 4f-metal, usually taking the oxidation state +3 in compounds, Me(b) is atom of d-metal, Ch = S, Se, Te, Pn = P, As, Sb) form the vast family of so-called layered 1111-phases [1,2] with tetragonal ZrCuSiAs-like structure which can be regarded as the sequence of [Me(a)–O] and [Me(b)–(Ch/Pn)] blocks alternating along the tetragonal axis, where each atom is characterized with coordination number = 4 (Fig.1). -
Available Online Journal of Scientific And
Available online www.jsaer.com Journal of Scientific and Engineering Research, 2016, 3(5):281-284 ISSN: 2394-2630 CODEN(USA): JSERBR Research Article Study of toxicity of arsenic during the synthesis of new class of iron-based oxyarsenide superconductors Intikhab A Ansari, Syed S Ghani*, Iqbal Hussain General Studies Department, Jubail Industrial College, P. O. Box - 10099, Jubail industrial City-31961, Saudi Arabia Abstract The toxicity of arsenic and its severe effect on human-beings are reported in this study. The different exposure limits of various materials are described during the synthesis of iron-based superconductor as a time- weighted average (TWA) over an 8-hours workday. This report reveals that the element arsenic is found to be highly toxic in case of inhalation or ingestion by the employers amongst the starting materials during the synthesis of oxyarsenide superconductor. All the exposure limits are taken from Occupational Safety and Health Administration (OSHA) regulations. This study helps to increase the primary care provider’s knowledge of hazardous substances such as arsenic in the environment and to promote the adoption of medical practices that aid in the evaluation and care of potentially exposed patients. Keywords Iron-based superconductor; toxicity; arsenic, exposure limits, extracted Introduction The recent discovery on the new class of iron-based superconductor has broken the tyranny of copper. The innovation of 26 K transition temperature (Tc) in fluorine-doped LaFeAsO superconductor [1] marked the beginning of worldwide efforts to investigate this new family of superconductors. After several efforts the Tc has reached 55 K by replacement of Lanthanum (La) by other rare earth elements [2-4]. -
United States Patent Office Patented Dec
3,294,827 United States Patent Office Patented Dec. 27, 1966 1. 2 3,294,827 which will remain inert during the preparative procedure. QUATERNARY AMMONIUMMETAL COMPOUNDS The term "capryly' used herein refers to the hydrocarbon Ronald R. Swanson, Minneapolis, Minn., assignor to radicals (octyl and decyl) derived from a mixture of General Mills, Inc., a corporation of Delaware caprylic acid and capric acid. No Drawing. Filed Sept. 26, 1961, Ser. No. 140,691 Another method for preparing the compounds of the 12 Claims. (CI. 260-429) present invention is by contacting the quaternary ammo nium starting material with a simple metallic salt. The This invention relates to novel quaternary ammonium quaternary and the metal salt are combined in a mutual compounds. solvent and, upon removing the solvent, the desired qua It is an object of this invention to provide novel qua 10 ternary ammonium metal compound is prepared. For ternary ammonium metal compounds. It is another ob example, if it is desired to prepare a quaternary ammo ject of this invention to provide the novel process for nium compound having an anion MnCl4, this can be the preparation of quaternary ammonium metal com done by contacting quaternary ammonium starting mate pounds. Other objects will appear hereinafter. rial with manganese chloride in a mutual solvent such as The objects of this invention are accomplished by a 5 ether or isopropanol. While the product must be com fatty quaternary ammonium metal compound wherein the pletely soluble in the chosen solvent, it is not generally anion of said quaternary compound is an inorganic anion necessary that both the starting quaternary compound and containing a metal of Group VIIB of the Periodic Table. -
On the New Oxyarsenides Eu5zn2as5o and Eu5cd2as5o
crystals Article On the New Oxyarsenides Eu5Zn2As5O and Eu5Cd2As5O Gregory M. Darone 1,2, Sviatoslav A. Baranets 1,* and Svilen Bobev 1,* 1 Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA; [email protected] 2 The Charter School of Wilmington, Wilmington, DE 19807, USA * Correspondence: [email protected] (S.B.); [email protected] (S.A.B.); Tel.: +1-302-831-8720 (S.B. & S.A.B.) Received: 20 May 2020; Accepted: 1 June 2020; Published: 3 June 2020 Abstract: The new quaternary phases Eu5Zn2As5O and Eu5Cd2As5O have been synthesized by metal flux reactions and their structures have been established through single-crystal X-ray diffraction. Both compounds crystallize in the centrosymmetric space group Cmcm (No. 63, Z = 4; Pearson symbol oC52), with unit cell parameters a = 4.3457(11) Å, b = 20.897(5) Å, c = 13.571(3) Å; and a = 4.4597(9) Å, b = 21.112(4) Å, c = 13.848(3) Å, for Eu5Zn2As5O and Eu5Cd2As5O, respectively. The crystal structures include one-dimensional double-strands of corner-shared MAs4 tetrahedra (M = Zn, Cd) and As–As bonds that connect the tetrahedra to form pentagonal channels. Four of the five Eu atoms fill the space between the pentagonal channels and one Eu atom is contained within the channels. An isolated oxide anion O2– is located in a tetrahedral hole formed by four Eu cations. Applying the valence rules and the Zintl concept to rationalize the chemical bonding in Eu5M2As5O(M = Zn, Cd) reveals that the valence electrons can be counted as follows: 5 [Eu2+] + 2 [M2+] + 3 × × × [As3–] + 2 [As2–] + O2–, which suggests an electron-deficient configuration. -
Atomic Structure and Non-Electronic Properties of Semiconductors
SEMICONDUCTORS VOLUME 32, NUMBER 7 JULY 1998 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500–700 °C N. A. Bert, A. A. Suvorova, and V. V. Chaldyshev A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia Yu. G. Musikhin A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia; Max Planck Institut fu¨r Mikrostrukturphysik, D-5120 Halle, Germany V. V. Preobrazhenski , M. A. Putyato, and B. R. Semyagin Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090 Novosibirsk, Russia R. Werner Max Planck Institut fu¨r Mikrostrukturphysik, D-05120 Halle, Germany ~Submitted December 29, 1997; accepted for publication December 31, 1997! Fiz. Tekh. Poluprovodn. 32, 769–774 ~July 1998! Transmission electron microscopy is used to study the microstructure of indium d layers in GaAs~001! grown by molecular beam epitaxy at low temperature ~200 °C!. This material, referred to as LT-GaAs, contains a high concentration ('1020 cm23) of point defects. It is established that when the material is d-doped with indium to levels equivalent to 0.5 or 1 monolayer ~ML!, the roughness of the growth surface leads to the formation of InAs islands with characteristic lateral dimensions ,10 nm, which are distributed primarily within four adjacent atomic layers, i.e., the thickness of the indium-containing layer is 1.12 nm. Subsequent annealing, even at relatively low temperatures, leads to significant broadening of the indium- containing layers due to the interdiffusion of In and Ga, which is enhanced by the presence of a high concentration of point defects, particularly VGa ,inLT-GaAs.