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Magnetic Plasmons Induced in a Dielectric-Metal Heterostructure by Optical Magnetism

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Magnetic Plasmons Induced in a Dielectric-Metal Heterostructure by Optical Magnetism Nanophotonics 2021; 10(10): 2639–2649 Research article Shulei Li, Lidan Zhou, Mingcheng Panmai, Jin Xiang and Sheng Lan* Magnetic plasmons induced in a dielectric-metal heterostructure by optical magnetism https://doi.org/10.1515/nanoph-2021-0146 Finally, we demonstrate the applications of the lowest- Received April 7, 2021; accepted June 25, 2021; order TE wave excited in a Si3N4/Ag heterostructure in published online July 9, 2021 optical display with good chromaticity and optical sensing with high sensitivity. Abstract: We investigate numerically and experimentally the optical properties of the transverse electric (TE) waves Keywords: dielectric-metal heterostructure; optical supported by a dielectric-metal heterostructure. They are display; optical sensing; surface plasmon polariton; considered as the counterparts of the surface plasmon transverse electric wave; transverse magnetic wave. polaritons (i.e., the transverse magnetic (TM) waves) which have been extensively studied in the last several decades. We show that TE waves with resonant wave- 1 Introduction lengths in the visible light spectrum can be excited in a dielectric-metal heterostructure when the optical thick- Surface plasmon polaritons (SPPs), which is a transverse ness of the dielectric layer exceeds a critical value. We magnetic (TM) wave (i.e., k⋅H = 0 and k⋅E ≠ 0) propagating fi reveal that the electric and magnetic eld distributions for on the surface of a metal film, have received intensive and the TE waves are spatially separated, leading to higher extensive studies since 1980s [1–3]. Owing to the strong quality factors or narrow linewidths as compared with the localization of electric field achieved on the surface of the TM waves. We calculate the thickness, refractive index and metal, SPPs has been exploited to construct plasmonic incidence angle dispersion relations for the TE waves devices of different functionalities [4], such as waveguides supported by a dielectric-metal heterostructure. In ex- [5, 6], sensors [7–10], and spacers [11–13] etc. However, periments, we observe optical resonances with linewidths many practical applications of SPPs are limited by their ∼ fl as narrow as 10 nm in the re ection or scattering spectra large damping rates, which are manifested in the broad of the TE waves excited in a Si3N4/Ag heterostructure. linewidths of SPPs. In principle, the large loss of SPPs originates from the collective oscillation of electrons driven fi – Shulei Li and Lidan Zhou contributed equally to this work. by the longitudinal electric eld of SPPs [14 19]. Various scenarios have been proposed to overcome this disadvan- *Corresponding author: Sheng Lan, Guangdong Provincial Key tage but a significant improvement remains a challenge Laboratory of Nanophotonic Functional Materials and Devices, School [20–24]. of Information and Optoelectronic Science and Engineering, South In most cases, especially in practical applications, SPPs China Normal University, Guangzhou 510006, China, E-mail: [email protected] propagating on the surface of a bare metal film (or at the Shulei Li and Mingcheng Panmai, Guangdong Provincial Key interface between air and a metal film) is taken into account. Laboratory of Nanophotonic Functional Materials and Devices, School It has been known that such SPPs can only be excited by of Information and Optoelectronic Science and Engineering, South using p-polarized (or TM-polarized) light [25]. No SPPs will China Normal University, Guangzhou 510006, China. https:// be generated if s-polarized (or TE-polarized) light is orcid.org/0000-0001-9346-3773 (S. Li) employed. The physical origin for this behavior is that a Lidan Zhou, Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and transverse electric (TE) wave is not supported by a bare Optoelectronic Science and Engineering, South China Normal metal surface (i.e., an air/metal interface). Different from the University, Guangzhou 510006, China; and State Key Laboratory of longitudinal electric field in SPPs, which can be generated Optoelectronic Materials and Technologies and School of Electronics by the collective oscillation of electrons in the metal film, the and Information Technology, Sun Yat-sen University, Guangzhou, longitudinal magnetic field cannot be established on a bare China Jin Xiang, Department of Electrical and Computer Engineering, metal surface. For this reason, the counterparts of SPPs, a TE University of Wisconsin–Madison, Madison, USA wave (i.e., k⋅E =0andk⋅H ≠ 0) propagating on the surface of Open Access. © 2021 Shulei Li et al., published by De Gruyter. This work is licensed under the Creative Commons Attribution 4.0 International License. 2640 S. Li et al.: Magnetic plasmons induced in a heterostructure ametalfilm has long been ignored for both fundamental metal heterostructure. We design a Si3N4/Ag hetero- properties and device applications. structure that supports both TM and TE waves spanning the In recent years, dielectric nanoparticles with high visible to near infrared spectral range. It is revealed that the refractive indices in the visible to near infrared spectral thickness of the dielectric layer must exceed a critical value range, such as silicon (Si) [26, 27], germanium (Ge) [28] and in order to support the TE wave of the lowest order. More gallium arsenide (GaAs) [29], have attracted great interest importantly, it is found that the damping rate of the lowest- because they are considered as building blocks (i.e., meta- order TE wave is reduced dramatically as compared with atoms) for metasurfaces and metamaterials operating at that of the TM wave because of the spatial separation of the optical frequencies. All-dielectric photonic devices with a electric and magnetic fields, leading to a narrow linewidth variety of functionalities, which are constructed by using of ∼10 nm. Finally, we demonstrate the application of such such high-index nanoparticles, have been successfully TE waves in high-quality optical display and highly sen- demonstrated [30, 31]. The recent studies on the scattering sitive optical sensing. properties of Si nanoparticle placed on a thin metal film reveal that the coherent interaction between the electric dipole (ED) excited in the nanoparticle and its mirror image 2 Results and discussion induced by the metal film leads to the formation of a magnetic dipole (MD) at the contact point between the As mentioned at the beginning, SPPs propagating at the nanoparticle and the metal film [32–35]. This behavior re- interface between a dielectric (including air) and a metal minds us that the oscillating magnetic field necessary for can only be excited by using p-polarized light, as sche- the excitation of a TE wave can be realized by adding a thin matically shown in Figure 1A. Such a TM wave contains two dielectric layer on the metal film. Early in 2006, it was electric field components (Ex and Ez) and one magnetic shown that specially arranged metal nanoparticles can field component (Hy). The electric field parallel to the support magnetic plasmon resonances in the optical propagation direction (Ex) is correlated with the periodic spectral range, paving the way for the development of oscillation of free electrons in the metal film. As the subwavelength negative index material [36]. Recently, the counterpart of the TM wave, the TE wave supported by a optical magnetism in planar metamaterial heterostructures dielectric-metal heterostructure should contain one elec- has been systematically investigated. It was demonstrated tric field component (Ey) and two magnetic field compo- that TE waves can be excited in multilayer dielectric-metal nents (Hx and Hz). While a TM wave can be excited on the heterostructures composed of dielectric layers of silicon surface of a bare metal (i.e., at the interface between air and dioxide (SiO2), titanium dioxide (TiO2), Ge and silver (Ag) a metal film), such a TE wave does not exist because of the thin film by exploiting the so-called optical magnetism [37, absence of an analytical solution to the Maxwell equation. 38]. In addition, the TE waves excited in a SiC/Ge3Sb2Te6 From the viewpoint of optical magnetism, an MD can be heterostructure was also investigated [39], where created by exciting the ED in a dielectric block placed on a Ge3Sb2Te6 is a phase-change material. Apart from high- metal film. This phenomenon has been well studied by index dielectric materials, dielectric materials with mod- using the so-called mirror-image theory [32]. By enlarging erate refractive indices and low optical loss in the visible the lateral dimensions of the dielectric block, one can light spectrum have also been extensively studied owing to create a periodically arranged magnetic dipole moments in their potential applications in the construction of nano- a dielectric-metal heterostructure, exciting a TE wave with scale functional devices. A typical example is silicon one electric component (Ey) and two magnetic components nitride (Si3N4), which is considered as a promising material (Hx and Hz). As demonstrated in the following, the resonant for making waveguides and resonators operating in the wavelength of the lowest-order TE wave enters into the visible light spectrum. It has the advantages of large visible light spectrum when the optical thickness of the bandgap, wide transparency range, high thermal stability, dielectric layer exceeds a critical value. In other words, an chemical inertness, and good insulating properties [40, 41]. analytical solution to the Maxwell equation is present in More importantly, the fabrication of Si3N4 nanoparticles the visible light spectrum when the optical thickness of the and nanostructures is compatible with the current fabri- dielectric layer exceeds a critical value. cation of Si chips. Very recently, nanogratings made of Now we examine a dielectric block (e.g., a Si3N4 Si3N4 have been successfully exploited to realize hologram cuboid) with a side length of d and a height of h placed on a with continuous phase modulation [42]. thin metal film (e.g., Ag film with a thickness of 50 nm) In this article, we investigate both numerically and supported by a SiO2 substrate, as sketched in Figure 1B.
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