S-Parameter/Return Loss/Smith Chart Digital Modulation Type And

Total Page:16

File Type:pdf, Size:1020Kb

S-Parameter/Return Loss/Smith Chart Digital Modulation Type And RF & Microwave References S-Parameter/Return Loss/Smith Chart Maximum and Minimum S-parameters (scattering parameters) are a convention for characterizing RF & microwave devices, consisting of reflection and transmission coefficients—familiar concepts to designers. Transmission Resultant VSWR from coefficients are commonly referred to as gains or attenuations, reflection coefficients relate to return losses and VSWRs (voltage standing wave ratios). Conceptually, “s” parameters are like “h”, “y”, or “z” parameters because they describe the inputs and Two Mismatches outputs of a black box. The inputs and outputs are in terms of power for “s” parameters; for “h”, “y”, and “z” parameters, they are voltages and currents. Test Device Component Using the convention that “a” is a signal into a part VSWR’s and “b” is a signal out, the figure below helps to RESULTANT explain “s” parameters. VSWR 2 In this figure, “a” and “b” are the square roots of power; (a1) is the power incident are port 1 and 2 (b2) is the power leaving port 2. The diagram shows the relationship between the “s” parameters and If L is the larger VSWR of two the “a’s” and “b’s”. For example, a signal, a1, is partially reflected at port 1; the rest of the signal is cascaded lossless mismatches transmitted through the device and out of port 2. The fraction of a1 that is reflected at port 1 is s11; and S the smaller, the resultant the fraction of a1 that is transmitted is s21. Similarly, the fraction of a 2 that is reflected at port 2 is VSWR may vary from a mini- s22, and the fraction s12 is trans- mum N = L/S to a maximum mitted. The signal, b1, leaving port 1 is the sum of the fraction X = LS, depending on the spacing between L and S. of a1 that is reflected at port 1 and the fraction of a2 that is transmitted from port 2. Thus, the outputs can be related the the inputs by the equations: b1=s11a1+s12a2 b2=s21a1+s22a2 when a2= 0 Example: b__1 __b2 s11= s21= a1 a1 If S = 2 and L = 2.5, then X = 5 and N = 1.25. Given any two values, the other two may be found. and when a1= 0 b__1 b __2 s12= s22= a2 a2 Millimeter–Wave Transmission Spectrum Analyzer Digital Modulation Type and Constellation Attenuation Curves Display Range Wavelength (mm) _____________ +30 dBm DAMAGE LEVEL The atmospheric attenuation of mm- wave signals varies ______ 0 dBm <1 dB GAIN COMPRESSION greatly, allowing for long-range exploita- ______ –40 dBm MAX INPUT FOR SPECIFIED tion by operating in DISTORTION BPSK QPSK Pi/4DQPSK: Two Bits Per Symbol the windows at 35, One Bit Per Symbol Two Bits Per Symbol Symbol Rate = 1/2 Bit Rate 94, 140, and 220 GHz, Symbol Rate = Bit Rate Symbol Rate = 1/2 Bit Rate or 8PSK: Three Bits Per Symbol or for short-range, OPTIMUM OPERATING RANGE Symbol Rate = 1/3 Bit Rate intercept resistant (70 dB, SPURIOUS FREE) communications at Total 44 to 65 GHz. Measurement Range ______ –110 dBm NOISE LEVEL (10 kHz BW) Attenuation (dB/km) ______ –120 dBm NOISE LEVEL (1 kHz BW) ______ –130 dBm NOISE LEVEL (100 Hz BW) _____________ –140 dBm NOISE LEVEL (10 Hz BW) 16 QAM 32 QAM 64 QAM Four Bits Per Symbol Five Bits Per Symbol Six Bits Per Symbol Frequency (GHz) Typical Values Symbol Rate = 1/4 Bit Rate Symbol Rate = 1/5 Bit Rate Symbol Rate = 1/6 Bit Rate Microwave Formulae Modulation Quality: Noise Power at Wavelength (λ) Characteristic Impedance (Z 0) of RF Cable Noise Figure (NFdB) 3 x 1010 λ(centimeters) = ______ 138 D Z = __ log S_____i /Ni Error Vector Magnitude 0 10 Standard Temperature f NF = 10 log √ ε d dB 10 8 r So /No ______3 x 10 λ(meters) = where εr = relative dielectric constant Where NF = noise figure (dB) f dB Q Magnitude Error (IQ error mag) D = inside diameter of outer Si /Ni = input signal-to-noise ratio where f = frequency (hertz) conductor So /No = output signal-to-noise ratio d = outside diameter of inner -23 Error Vector k = 1.38 x 10 joule /k Noise Figure (NFdB) dB (Power and Voltage) conductor Reflection Coefficient ρ R - jx R - jx T = Temperature (K) S /N L L _____i i P1 VSWR – 1 NFdB = 10 log10 dB(power)= 10 log10 __ Velocity Factor _________ Measured B = Bandwidth (Hz) ρ = So /No P2 __1 VSWR + 1 Signal v = __ x 100 Where NFdB = noise figure (dB) √εr where VSWR = Voltage Standing Wave Ratio E1 Si /Ni = input signal-to- dB(voltage)= 20 log10 __ E2 where ε = relative dielectric constant noise ratio r Return Loss in dB Available Noise Power* So /No = output signal-to- dB = 20 log10 ρ where P1 & P2 = system powers P = kTB noise ratio E1 & E2 = system voltages av where ρ = reflection coefficient -21 At 290KPav = 4 x 10 W/Hz = -174dBm/Hz VSWR Reference Signal In deep space kT = -198dBm/Hz _____1 + ρ VSWR = * Noise figure is defined when input is terminated at 290 Kelvins. 1 – ρ Phase Error (IQ error phase) where ρ = reflection coefficient I Sharing resources with Engineering Educators www.EducatorsCorner.com.
Recommended publications
  • Smith Chart Tutorial
    Frank Lynch, W4FAL Smith Charts Frank A. Lynch W 4FA L Page 1 24 April 2008 “SCARS” http://smithchart.org Frank Lynch, W4FAL Smith Chart History • Invented by Phillip H. Smith in 1939 • Used to solve a variety of transmission line and waveguide problems Basic Uses For evaluating the rectangular components, or the magnitude and phase of an input impedance or admittance, voltage, current, and related transmission functions at all points along a transmission line, including: • Complex voltage and current reflections coefficients • Complex voltage and current transmission coefficents • Power reflection and transmission coefficients • Reflection Loss • Return Loss • Standing Wave Loss Factor • Maximum and minimum of voltage and current, and SWR • Shape, position, and phase distribution along voltage and current standing waves Page 2 24 April 2008 Frank Lynch, W4FAL Basic Uses (continued) For evaluating the effects of line attenuation on each of the previously mentioned parameters and on related transmission line functions at all positions along the line. For evaluating input-output transfer functions. Page 3 24 April 2008 Frank Lynch, W4FAL Specific Uses • Evaluating input reactance or susceptance of open and shorted stubs. • Evaluating effects of shunt and series impedances on the impedance of a transmission line. • For displaying and evaluating the input impedance characteristics of resonant and anti-resonant stubs including the bandwidth and Q. • Designing impedance matching networks using single or multiple open or shorted stubs. • Designing impedance matching networks using quarter wave line sections. • Designing impedance matching networks using lumped L-C components. • For displaying complex impedances verses frequency. • For displaying s-parameters of a network verses frequency.
    [Show full text]
  • Analysis of Microwave Networks
    ! a b L • ! t • h ! 9/ a 9 ! a b • í { # $ C& $'' • L C& $') # * • L 9/ a 9 + ! a b • C& $' D * $' ! # * Open ended microstrip line V + , I + S Transmission line or waveguide V − , I − Port 1 Port Substrate Ground (a) (b) 9/ a 9 - ! a b • L b • Ç • ! +* C& $' C& $' C& $ ' # +* & 9/ a 9 ! a b • C& $' ! +* $' ù* # $ ' ò* # 9/ a 9 1 ! a b • C ) • L # ) # 9/ a 9 2 ! a b • { # b 9/ a 9 3 ! a b a w • L # 4!./57 #) 8 + 8 9/ a 9 9 ! a b • C& $' ! * $' # 9/ a 9 : ! a b • b L+) . 8 5 # • Ç + V = A V + BI V 1 2 2 V 1 1 I 2 = 0 V 2 = 0 V 2 I 1 = CV 2 + DI 2 I 2 9/ a 9 ; ! a b • !./5 $' C& $' { $' { $ ' [ 9/ a 9 ! a b • { • { 9/ a 9 + ! a b • [ 9/ a 9 - ! a b • C ) • #{ • L ) 9/ a 9 ! a b • í !./5 # 9/ a 9 1 ! a b • C& { +* 9/ a 9 2 ! a b • I • L 9/ a 9 3 ! a b # $ • t # ? • 5 @ 9a ? • L • ! # ) 9/ a 9 9 ! a b • { # ) 8
    [Show full text]
  • Smith Chart Calculations
    The following material was extracted from earlier edi- tions. Figure and Equation sequence references are from the 21st edition of The ARRL Antenna Book Smith Chart Calculations The Smith Chart is a sophisticated graphic tool for specialized type of graph. Consider it as having curved, rather solving transmission line problems. One of the simpler ap- than rectangular, coordinate lines. The coordinate system plications is to determine the feed-point impedance of an consists simply of two families of circles—the resistance antenna, based on an impedance measurement at the input family, and the reactance family. The resistance circles, Fig of a random length of transmission line. By using the Smith 1, are centered on the resistance axis (the only straight line Chart, the impedance measurement can be made with the on the chart), and are tangent to the outer circle at the right antenna in place atop a tower or mast, and there is no need of the chart. Each circle is assigned a value of resistance, to cut the line to an exact multiple of half wavelengths. The which is indicated at the point where the circle crosses the Smith Chart may be used for other purposes, too, such as the resistance axis. All points along any one circle have the same design of impedance-matching networks. These matching resistance value. networks can take on any of several forms, such as L and pi The values assigned to these circles vary from zero at the networks, a stub matching system, a series-section match, and left of the chart to infinity at the right, and actually represent more.
    [Show full text]
  • Scattering Parameters
    Scattering Parameters Motivation § Difficult to implement open and short circuit conditions in high frequencies measurements due to parasitic L’s and C’s § Potential stability problems for active devices when measured in non-operating conditions § Difficult to measure V and I at microwave frequencies § Direct measurement of amplitudes/ power and phases of incident and reflected traveling waves 1 Prof. Andreas Weisshaar ― ECE580 Network Theory - Guest Lecture ― Fall Term 2011 Scattering Parameters Motivation § Difficult to implement open and short circuit conditions in high frequencies measurements due to parasitic L’s and C’s § Potential stability problems for active devices when measured in non-operating conditions § Difficult to measure V and I at microwave frequencies § Direct measurement of amplitudes/ power and phases of incident and reflected traveling waves 2 Prof. Andreas Weisshaar ― ECE580 Network Theory - Guest Lecture ― Fall Term 2011 1 General Network Formulation V + I + 1 1 Z Port Voltages and Currents 0,1 I − − + − + − 1 V I V = V +V I = I + I 1 1 k k k k k k V1 port 1 + + V2 I2 I2 V2 Z + N-port 0,2 – port 2 Network − − V2 I2 + VN – I Characteristic (Port) Impedances port N N + − + + VN I N Vk Vk Z0,k = = − + − Z0,N Ik Ik − − VN I N Note: all current components are defined positive with direction into the positive terminal at each port 3 Prof. Andreas Weisshaar ― ECE580 Network Theory - Guest Lecture ― Fall Term 2011 Impedance Matrix I1 ⎡V1 ⎤ ⎡ Z11 Z12 Z1N ⎤ ⎡ I1 ⎤ + V1 Port 1 ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ - V2 Z21 Z22 Z2N I2 ⎢ ⎥ = ⎢ ⎥ ⎢ ⎥ I2 + ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ V2 Port 2 ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ - V Z Z Z I N-port ⎣ N ⎦ ⎣ N1 N 2 NN ⎦ ⎣ N ⎦ Network I N [V]= [Z][I] V + Port N N + - V Port i i,oc- Open-Circuit Impedance Parameters Port j Ij N-port Vi,oc Zij = Network I j Port N Ik =0 for k≠ j 4 Prof.
    [Show full text]
  • Smith Chart Examples
    SMITH CHART EXAMPLES Dragica Vasileska ASU Smith Chart for the Impedance Plot It will be easier if we normalize the load impedance to the characteristic impedance of the transmission line attached to the load. Z z = = r + jx Zo 1+ Γ z = 1− Γ Since the impedance is a complex number, the reflection coefficient will be a complex number Γ = u + jv 2 2 2v 1− u − v x = r = 2 2 ()1− u 2 + v2 ()1− u + v Real Circles 1 Im {Γ} 0.5 r=0 r=1/3 r=1 r=2.5 1 0.5 0 0.5 1 Re {Γ} 0.5 1 Imaginary Circles Im 1 {Γ} x=1/3 x=1 x=2.5 0.5 Γ 1 0.5 0 0.5 1 Re { } x=-1/3 x=-1 x=-2.5 0.5 1 Normalized Admittance Y y = = YZ o = g + jb Yo 1− Γ y = 1+ Γ 2 1− u 2 − v2 g 1 u + + v2 = g = 2 ()1+ u 2 + v2 1+ g ()1+ g − 2v 2 b = 2 1 1 2 2 ()u +1 + v + = ()1+ u + v b b2 These are equations for circles on the (u,v) plane Real admittance 1 Im {Γ} 0.5 g=2.5 g=1 g=1/3 1 0.5 0 0.5Re {Γ} 1 0.5 1 Complex Admittance 1 Im {Γ} b=-1 b=-1/3 b=-2.5 0.5 1 0.5 0 0.5Re {Γ 1} b=2.5 b=1/3 0.5 b=1 1 Matching • For a matching network that contains elements connected in series and parallel, we will need two types of Smith charts – impedance Smith chart – admittance Smith Chart • The admittance Smith chart is the impedance Smith chart rotated 180 degrees.
    [Show full text]
  • Smith Chart • Smith Chart Was Developed by P
    Smith Chart • Smith Chart was developed by P. Smith at the Bell Lab in 1939 • Smith Chart provides an very useful way of visualizing the transmission line phenomenon and matching circuits. • In this slide, for convenience, we assume the normalized impedance is 50 Ohm. Smith Chart and Reflection coefficient Smith Chart is a polar plot of the voltage reflection coefficient, overlaid with impedance grid. So, you can covert the load impedance to reflection coefficient and vice versa. Smith Chart and impedance Examples: The upper half of the smith chart is for inductive impedance. The lower half of the is for capacitive impedance. Constant Resistance Circle This produces a circle where And the impedance on this circle r = 1 with different inductance (upper circle) and capacitance (lower circle) More on Constant Impedance Circle The circles for normalized rT = 0.2, 0.5, 1.0, 2.0 and 5.0 with Constant Inductance/Capacitance Circle Similarly, if xT is hold unchanged and vary the rT You will get the constant Inductance/capacitance circles. Constant Conductance and Susceptance Circle Reflection coefficient in term of admittance: And similarly, We can draw the constant conductance circle (red) and constant susceptance circles(blue). Example 1: Find the reflection coefficient from input impedance Example1: Find the reflection coefficient of the load impedance of: Step 1: In the impedance chart, find 1+2j. Step 2: Measure the distance from (1+2j) to the Origin w.r.t. radius = 1, which is read 0.7 Step 3: Find the angle, which is read 45° Now if we use the formula to verify the result.
    [Show full text]
  • Impedance Matching
    Impedance Matching Advanced Energy Industries, Inc. Introduction The plasma industry uses process power over a wide range of frequencies: from DC to several gigahertz. A variety of methods are used to couple the process power into the plasma load, that is, to transform the impedance of the plasma chamber to meet the requirements of the power supply. A plasma can be electrically represented as a diode, a resistor, Table of Contents and a capacitor in parallel, as shown in Figure 1. Transformers 3 Step Up or Step Down? 3 Forward Power, Reflected Power, Load Power 4 Impedance Matching Networks (Tuners) 4 Series Elements 5 Shunt Elements 5 Conversion Between Elements 5 Smith Charts 6 Using Smith Charts 11 Figure 1. Simplified electrical model of plasma ©2020 Advanced Energy Industries, Inc. IMPEDANCE MATCHING Although this is a very simple model, it represents the basic characteristics of a plasma. The diode effects arise from the fact that the electrons can move much faster than the ions (because the electrons are much lighter). The diode effects can cause a lot of harmonics (multiples of the input frequency) to be generated. These effects are dependent on the process and the chamber, and are of secondary concern when designing a matching network. Most AC generators are designed to operate into a 50 Ω load because that is the standard the industry has settled on for measuring and transferring high-frequency electrical power. The function of an impedance matching network, then, is to transform the resistive and capacitive characteristics of the plasma to 50 Ω, thus matching the load impedance to the AC generator’s impedance.
    [Show full text]
  • Beyond the Smith Chart
    IMAGE LICENSED BY GRAPHIC STOCK Beyond the Smith Chart Eli Bloch and Eran Socher he topic of impedance transformation and Since CMOS technology was primarily and ini- matching is one of the well-established tially developed for digital purposes, the lack of and essential aspects of microwave engi- high-quality passive components made it practically neering. A few decades ago, when discrete useless for RF design. The device speed was also radio-frequency (RF) design was domi- far inferior to established III-V technologies such as Tnant, impedance matching was mainly performed us- GaAs heterojunction bipolar transistors (HBTs) and ing transmission-lines techniques that were practical high-electron mobility transistors (HEMTs). The first due to the relatively large design size. As microwave RF CMOS receiver was constructed at 1989 [1], but design became possible using integrated on-chip com- it would take another several years for a fully inte- ponents, area constraints made LC- section match- grated CMOS RF receiver to be presented. The scal- ing (using lumped passive elements) more practical ing trend of CMOS in the past two decades improved than transmission line matching. Both techniques are the transistors’ speed exponentially, which provided conveniently visualized and accomplished using the more gain at RF frequencies and also enabled opera- well-known graphical tool, the Smith chart. tion at millimeter-wave (mm-wave) frequencies. The Eli Bloch ([email protected]) is with the Department of Electrical Engineering, Technion— Israel Institute of Technology, Haifa 32000, Israel. Eran Socher ([email protected]) is with the School of Electrical Engineering, Tel-Aviv University, 69978, Israel.
    [Show full text]
  • 36 Smith Chart and VSWR
    36 Smith Chart and VSWR Generator Transmission line I d ( ) Wire 2 + Load Z + g V d Zo • Consider the general phasor expressions - ( ) ZL F = Vg - Wire 1 l d V +ejβd(1 − Γ e−j2βd) 0 + jβd −j2βd L |V (d)|max V (d)=V e (1 + ΓLe ) and I(d)= |V (d)| Zo describing the voltage and current variations on TL’s in sinusoidal |V (d)|min dmax steady-state. dmin – Complex addition displayed Unless ΓL =0,thesephasorscontainreflectedcomponents,which graphically superposed on a means that voltage and current variations on the line “contain” Smith Chart standing waves. SmithChart 1 .5 2 In that case the phasors go through cycles of magnitude variations as a function of d,andinthevoltagemagnitudeinparticular(seemargin) .2 z(dmaxx!5) ( d) Γ(d) varying as 1+Γ =VSWR .2 .5 1 2 r!5 + −j2βd + 0 VSWR |V (d)| = |V ||1+ΓLe | = |V ||1+Γ(d)| 1 Γ(dmax)=|ΓL| takes maximum and minimum values of ".2 x!"5 + + |V (d)|max = |V |(1 + |ΓL|) and |V (d)|min = |V |(1 −|ΓL|) ".5 "2 "1 at locations d = dmax and dmin such that |1+Γ(d)| maximizes for d = dmax −j2βdmax −j2βdmin Γ(dmax)=ΓLe = |ΓL| and Γ(dmin)=ΓLe = −|ΓL|, |1+Γ(d)| minimizes for d = dmin and such that Γ(dmin)=−Γ(dmax) λ d − d is an odd multiple of . max min 4 1 Generator Transmission line I d – These results can be most easily understood and verified graphi- ( ) Wire 2 + Load cally on a SC as shown in the margin. + Zg Z - V (d) o ZL F = Vg - Wire 1 l d • We define a parameter known as voltage standing wave ratio,or 0 |V (d)|max VSWR for short, by |V (d)| |V (d)|min dmax |V (dmax)| 1+|ΓL| VSWR − 1 VSWR ≡ = ⇔|ΓL| = .
    [Show full text]
  • Scattering Parameters - Wikipedia, the Free Encyclopedia Page 1 of 13
    Scattering parameters - Wikipedia, the free encyclopedia Page 1 of 13 Scattering parameters From Wikipedia, the free encyclopedia Scattering parameters or S-parameters (the elements of a scattering matrix or S-matrix ) describe the electrical behavior of linear electrical networks when undergoing various steady state stimuli by electrical signals. The parameters are useful for electrical engineering, electronics engineering, and communication systems design, and especially for microwave engineering. The S-parameters are members of a family of similar parameters, other examples being: Y-parameters,[1] Z-parameters,[2] H- parameters, T-parameters or ABCD-parameters.[3][4] They differ from these, in the sense that S-parameters do not use open or short circuit conditions to characterize a linear electrical network; instead, matched loads are used. These terminations are much easier to use at high signal frequencies than open-circuit and short-circuit terminations. Moreover, the quantities are measured in terms of power. Many electrical properties of networks of components (inductors, capacitors, resistors) may be expressed using S-parameters, such as gain, return loss, voltage standing wave ratio (VSWR), reflection coefficient and amplifier stability. The term 'scattering' is more common to optical engineering than RF engineering, referring to the effect observed when a plane electromagnetic wave is incident on an obstruction or passes across dissimilar dielectric media. In the context of S-parameters, scattering refers to the way in which the traveling currents and voltages in a transmission line are affected when they meet a discontinuity caused by the insertion of a network into the transmission line. This is equivalent to the wave meeting an impedance differing from the line's characteristic impedance.
    [Show full text]
  • S-Parameter Simulation and Optimization
    S-parameter Simulation and Optimization ADS 2009 (version 1.0) Copyright Agilent Technologies 2009 Slide 5 - 1 S-parameters are Ratios Usually given in dB as 20 log of the voltage ratios of the waves at the ports: incident, reflected, or transmitted. S-parameter (ratios): out / in • S11 - Forward Reflection (input match - impedance) Best viewed on a • S22 - Reverse Reflection (output match - impedance) Smith chart. • S21 - Forward Transmission (gain or loss) These are easier • S12 - Reverse Transmission (leakage or isolation) to understand and simply plotted. Results of an S-Parameter Simulation in ADS • S-matrix with all complex values at each frequency point • Read the complex reflection coefficient (Gamma) • Change the marker readout for Zo • Smith chart plots for impedance matching • Results are similar to Network Analyzer measurements Next, ADS data ADS 2009 (version 1.0) Copyright Agilent Technologies 2009 Slide 5 - 2 Typical S-parameter data in ADS Transmission: S21 Reflection: S11 magnitude vs frequency Impedance on a Smith Chart Complete S-matrix with port impedance Note: Smith marker impedance readout is changed to Zo = 50 ohms. Smith chart basics... ADS 2009 (version 1.0) Copyright Agilent Technologies 2009 Slide 5 - 3 The Impedance Smith Chart simplified... This is an impedance chart transformed from rectangular Z. Normalized to 50 ohms, the center = R50+J0 or Zo (perfect match). For S11 or S22 (two-port), you get the complex impedance. Circles of constant Resistance 16.7 50 150 SHORT OPEN 25 50 100 Lines of constant Reactance (+jx above and -jx below) Zo (characteristic impedance) = 50 + j0 More Smith chart..
    [Show full text]
  • Scattering Parameters
    Chapter 1 Scattering Parameters Scattering parameters are a powerful analysis tool, providing much insight on the electrical behavior of circuits and devices at, and beyond microwave frequencies. Most vector network analyzers are designed with the built-in capability to display S parameters. To an experienced engineer, S parameter plots can be used to quickly identify problems with a measurement. A good understanding of their precise meaning is therefore essential. Talk about philosophy behind these derivations in order to place reader into context. Talk about how the derivations will valid for arbitrary complex reference impedances (once everything is hammered out). Talk about the view of pseudo-waves and the mocking of waveguide theory mentionned on p. 535 of [1]. Talk about alterantive point of view where S-parameters are a conceptual tool that can be used to look at real traveling waves, but don’t have to. Call pseudo-waves: traveling waves of a conceptual measurement setup. Is the problem of connecting a transmission line of different ZC than was used for the measurement that it may alter the circuit’s response (ex: might cause different modes to propagate), and thus change the network?? Question: forward/reverse scattering parameters: Is that when the input (port 1) is excited, or simly incident vs. reflected/transmitted??? The reader is referred to [2][1][3] for a more general treatment, including non-TEM modes. Verify this statement, and try to include this if possible. Traveling Waves And Pseudo-Waves Verify the following statements with the theory in [1]. Link to: Scattering and pseudo-scattering matrices.
    [Show full text]