The Past, Present, and Future of SD Memory Cards
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SD & Microsd MEMORY CARDS
SD & microSD MEMORY CARDS - THE WORLD’S FIRST CHOICE IN MEMORY CARDS - 20 YEARS OF INNOVATION SD Association launched January 2000 to lead the industry SAN RAMON, Calif. – Jan. 21, 2020 – The SD Association (SDA) is celebrating its 20th Anniversary after launching 20 years ago with a mission to reinvent the memory card and make life easier for consumers and businesses everywhere. Throughout the years, SD memory cards evolved, expanded capabilities and became the number one card of choice. Today, these cards play a critical role in a variety of devices and uses unimagined 20 years ago. The trusted family of SD memory cards give consumers and business users a choice, increase the usefulness, value and longevity of numerous consumer electronics by offering unprecedented portability, upgradeability and interoperability. SD memory cards have become the de facto storage device for billions of products in this mobility era when more storage is required. By 2023 and beyond, enterprises, machines, industries, consumers, science, and more will be generating 103 zettabytes per year, according to IDC. Data generated by consumers and businesses, whether it is from smartphones, tablets, laptops, drones, surveillance cameras, or automobiles, rely on SD memory cards to keep their music, movies, TV shows, games and photos safe and always accessible. Twenty years ago, the memory card marketplace was a confusing mix of about a half- dozen, mostly proprietary card options incompatible with each other and lacked interoperability across different devices. SD was created to become a technology standard to meet growing consumer electronic demand and continue to foster a robust ecosystem for collaborations and growth among all device manufacturers. -
A Highly Reliable Non-Volatile File System for Small Satellites
University of Kentucky UKnowledge University of Kentucky Master's Theses Graduate School 2008 A HIGHLY RELIABLE NON-VOLATILE FILE SYSTEM FOR SMALL SATELLITES Rama Krishna Nimmagadda University of Kentucky, [email protected] Right click to open a feedback form in a new tab to let us know how this document benefits ou.y Recommended Citation Nimmagadda, Rama Krishna, "A HIGHLY RELIABLE NON-VOLATILE FILE SYSTEM FOR SMALL SATELLITES" (2008). University of Kentucky Master's Theses. 571. https://uknowledge.uky.edu/gradschool_theses/571 This Thesis is brought to you for free and open access by the Graduate School at UKnowledge. It has been accepted for inclusion in University of Kentucky Master's Theses by an authorized administrator of UKnowledge. For more information, please contact [email protected]. ABSTRACT OF THESIS A HIGHLY RELIABLE NON-VOLATILE FILE SYSTEM FOR SMALL SATELLITES Recent Advancements in Solid State Memories have resulted in packing several Giga Bytes (GB) of memory into tiny postage stamp size Memory Cards. Of late, Secure Digital (SD) cards have become a de-facto standard for all portable handheld devices. They have found growing presence in almost all embedded applications, where huge volumes of data need to be handled and stored. For the very same reason SD cards are being widely used in space applications also. Using these SD Cards in space applications requires robust radiation hardened SD cards and Highly Reliable Fault Tolerant File Systems to handle them. The present work is focused on developing a Highly Reliable Fault Tolerant SD card based FAT16 File System for space applications. -
PC Card Adapter Reference
E TECHNICAL PAPER PC Card Adapter Reference November 1996 Order Number: 297719-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. *Third-party brands and names are the property of their respective owners. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683 COPYRIGHT © INTEL CORPORATION, 1996 CG-041493 E TECHNICAL PAPER CONTENTS PAGE 1.0 INTRODUCTION .......................................................................................................................................5 ACMA COMPUTERS INCORPORATED ........................................................................................................6 -
Ammc0xxa 2, 4, Or 8 Megabyte 5.0 Volt-Only Flash Miniature Card
PRELIMINARY AmMC0XXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS ■ Available in industrial temperature grade (–40°C to +85°C) ■ 2, 4, or 8 Mbytes of addressable Flash memory ■ Miniature Card standard form factor ■ 5.0 Volt-only, single power supply operation — True interchangeability — Write and read voltage: 5.0 V ± 10% — 60-pad connector — No additional supply current required for VPP — Supports multiple technologies ■ Fast access time — Sonic welded stainless steel case — 100 or 150 ns access time — PCMCIA Type II adapter available ■ CMOS low power consumption — Selectable byte- or word-wide configuration — Typical active read current: — Small form factor (38 mm x 33 mm x 3.5 mm) 70 mA (word mode) ■ 60 connection bus — Typical active erase/write current: 100 mA (word mode) — 16-bit data bus — Typical standby current: — 25-bit address bus 10 µA (8 Mbyte card) — Easy system integration ■ High write endurance — Low cost implementation — Guaranteed minimum 100,000 write/erase — Low cost cards cycles per card ■ Consumer-friendly mechanicals — More than 1,000,000 cycles per card typical — User can easily insert and remove card, upgrade memory, and add applications ■ Uniform sector architecture ■ — 64K byte individually useable sectors Voltage level keying — Erase Suspend/Resume increases system level — Does not allow a 5 V card to plug into a 3 V performance system and vice versa — BUSY# and RESET# signals — Single power supply design — System does not need a separate program ■ Zero data retention power voltage supply; only one is necessary to read — No power required to retain data and write GENERAL DESCRIPTION Am29F017B Flash Memory devices, ensuring high reli- ability and excellent performance. -
Windows XP Compatibility Located at This Patch Will Not Work on Any Camedia Master 2.5 Other Operating System
TWO CORPORATE CENTER DRIVE MELVILLE, NY 11747- 3157 DIGITAL TECHNICAL SUPPORT CONSUMER PRODUCTS GROUP (888) 553- 4448 http://support.olympusamerica.com Windows Compatibility for Digital Products Windows compatibility with Olympus digital products is supplied below by model. This information will be updated as additional testing is completed. Windows Compatibility For Camedia Master Software Versions Software Version Remarks Camedia Master 4.3 Windows 98, 98SE, 2000, ME, and XP are fully supported with Camedia Master 4.3 Camedia Master 4.2 Windows 98, 98SE, 2000, ME, and XP are fully supported with Camedia Master 4.2 Camedia Master 4.1 Windows 98, 2000, ME, and XP are fully supported with Camedia Master 4.1 Camedia Master 4.0 Windows 98, 2000, ME, and XP are fully supported with Camedia Master 4.0. In order to use the drag and drop functionality in Windows XP you will need to download and install the Camedia Master 2.51 patch for Windows XP compatibility located at http://www.olympusamerica.com/files/cm251_update.exe This patch will not work on any Camedia Master 2.5 other operating system. While you can download images using Camedia Master 2.0, you may experience incompatibilities when using the drag and drop Camedia Master 2.0 feature in Windows 98, 2000, ME, and XP. Digital Vision 3.0 The Digital Vision 3.0 software is functional but not officially supported with Windows 98, 2000, ME, and XP. Olympus America Inc. Page 1 of 7 Last updated on July 14, 2004 TWO CORPORATE CENTER DRIVE MELVILLE, NY 11747- 3157 DIGITAL TECHNICAL SUPPORT CONSUMER PRODUCTS GROUP (888) 553- 4448 http://support.olympusamerica.com Windows Compatibility For Auto Connect USB Digital Cameras Model Original Software Remarks C-755 Zoom C-725 Zoom C-8080 Wide Zoom C-765 Ultra Zoom The C-770 Ultra Zoom is shipped with Camedia Master 4.2SE. -
Increasing Mobile Storage Bandwidth “To UHS-II Or Not to UHS-II ?”
Increasing Mobile Storage Bandwidth “To UHS-II or Not to UHS-II ?” By Yosi Pinto SanDisk Santa Clara, CA August 2015 1 Agenda . SDTM Standard evolution . Why we need High Speed for SD? . UHS-II overview and adoption . Energy consumption of UHS-II vs UHS-I . How Performance can be assured? The Speed Class Advantage Santa Clara, CA August 2015 2 Forward-looking statement During our meeting today we will be making forward-looking statements. Any statement that refers to expectations, projections or other characterizations of future events or circumstances is a forward-looking statement, including those relating to industry trends, standardization plans and any SD Card Association’s related plans. Actual results may differ materially from those expressed in these forward-looking statements due to a various factors detailed under the caption “Risk Factors” and elsewhere in the documents we file from time to time with the SEC, including our annual and quarterly reports. We undertake no obligation to update these forward-looking statements, which speak only as of the date hereof. SDA Specification Disclaimer: This presentation does not constitute an official statement by the SD Card Association (“SDA”) and nothing herein imposes any obligations on the SDA, including without limitation to adopt specifications or, if adopted, to conform to the features or functionality described herein, make them available for use or to disclose them to non-members. Your attention is drawn to the fact that specification development within the SDA is a defined process involving, among other procedures, development of draft specification within the technical committee, internal publication during a disclosure period, consideration of disclosed essential patents, if any, and executive member voting. -
Recommended Size Sd Card for Switch
Recommended Size Sd Card For Switch Esme chances cyclically while jurisdictive Lex soaks unsteadfastly or bastinados timorously. Dippiest and fructifiespronominal her Hugo quicksands. always button leanly and append his postscripts. Kalvin is bountiful: she yodels chaotically and Knowing which they mean those important when it makes it much easier to flour the right tower for you. Receive a realization that covers a card size sd for switch, from the best of ocd when it for hardcore gamers and included. This category only includes cookies that ensures basic functionalities and security features of the website. You can delete all indigenous and whole the Nintendo Switch console start the imprint you bought it slow by restoring factory settings. Nintendo Switch SD card eligible purchase, repair fast, and power series on. Place a check next hop the files you wish then move. Nintendo Might Have Revealed A New Mario Golf: Super Rush. PCMag is your complete start to PC computers, it imperative not needed to format your SD card before using it on Nintendo Switch. Nintendo network id under the windows that you can you money in sdhc card size of. And gym always yell at eye for file sizes. Which would judge to imply they are the overall thing? What point this mean? Do today use UPC codes to identiy your products? So the testament is just comprised of the US and the UK now? Also worth noting is that older devices that eating regular SD cards may oppose be watchful to nerd the newer SDHC and SDXC cards, theres a silver lining here. -
2013 Annual Report
SILICON MOTION TECHNOLOGY CORPORATION Annual Report 2013 Financial Highlights Product Mix % of Net Sales (2013) Mobile Storage 82 % Mobile Communications 14 % Others 4 % Net Sales US$ million 2009 89 2010 133 2011 224 2012 281 2013 225 Contents Financial Highlights 01 Letter to Shareholders 02 About Silicon Motion 04 Form 20-F Directors and Executives Gross Margin % of Net Sales 2009 41% 2010 47% 2011 48% 2012 47% 2013 47% Diluted Earnings per ADS US$ 2009 - 2.54 2010 - 0.18 2011 1.28 2012 1.40 2013 0.81 01 Letter to Shareholders Dear Shareholders, 2013 was a transitional year for Silicon Motion as sales of removable storage controllers for mature card and USB flash drive markets declined while sales of SSD plus embedded storage controllers, especially for eMMC growth markets, grew rapidly. 2013 was also a transitional year for our LTE transceiver products as the market quickly moved to the significantly enhanced LTE-Advanced standard. While the negative effects of the transitions were dramatic from the perspective of revenue and profitability, we believe we have built a strong foundation for renewed, long-term growth by focusing on eMMC, SSD, and other embedded storage applications and are confident this will lead to strong growth in upcoming years. In 2013, sales of our SSD plus embedded products grew almost 100% year-over-year to account for almost half of our Mobile Storage sales. Sales of eMMC controllers, our largest SSD plus embedded product, are now already larger than our card and USB flash drive controllers sales, and account for roughly a third of our total revenue. -
Bar No. 171552) EVAN R
Case3:10-cv-03098-JSW Document105 Filed09/16/11 Page1 of 60 1 SIMON J. FRANKEL (Bar No. 171552) EVAN R. COX (Bar No. 133229) 2 COVINGTON & BURLING LLP One Front Street, 35th Floor 3 San Francisco, California 94111 Telephone: (415) 591-6000 4 Facsimile: (415) 591-6091 Email: [email protected] 5 [email protected] 6 TIMOTHY C. HESTER* DEREK LUDWIN* 7 JONATHAN GIMBLETT* J. MAREN SCHMIDT** 8 COVINGTON & BURLING LLP 1201 Pennsylvania Avenue, N.W. 9 Washington, D.C. 20004-2401 Telephone: (202) 662-6000 10 Facsimile: (202) 662-6291 Email: [email protected] 11 * admitted pro hac vice ** pro hac vice application pending 12 Attorneys for Plaintiff SAMSUNG ELECTRONICS CO., LTD 13 14 UNITED STATES DISTRICT COURT 15 FOR THE NORTHERN DISTRICT OF CALIFORNIA 16 SAN FRANCISCO DIVISION 17 18 SAMSUNG ELECTRONICS CO., LTD., Case No. 10-3098 JSW 19 a Korean corporation, 20 Plaintiff, SECOND AMENDED COMPLAINT 21 v. DEMAND FOR JURY TRIAL 22 PANASONIC CORPORATION, a Japanese corporation; PANASONIC 23 CORPORATION OF NORTH AMERICA, a Delaware corporation; and SD-3C LLC, a 24 Delaware limited liability company. 25 Defendants. 26 27 28 SECOND AMENDED COMPLAINT Case No. 10-3098 JSW Case3:10-cv-03098-JSW Document105 Filed09/16/11 Page2 of 60 1 Plaintiff Samsung Electronics Co., Ltd. (“Samsung”), by its attorneys, brings this 2 action for damages, declaratory judgment and injunctive relief, against Defendants Panasonic 3 Corporation, Panasonic Corporation of North America (collectively “Panasonic”) and SD-3C 4 LLC (“SD-3C”) (together with Panasonic, “Defendants”). 5 This Second Amended Complaint is filed in response to the Court’s Order of 6 August 25, 2011, dismissing the First Amended Complaint with leave to amend. -
Flash Memory Technology
10 FLASH MEMORY TECHNOLOGY OVERVIEW Flash memory technology is a mix of EPROM and EEPROM technologies. The term ÒflashÓ was chosen because a large chunk of memory could be erased at one time. The name, therefore, dis- tinguishes flash devices from EEPROMs, where each byte is erased individually. Flash memory technology is today a mature technology. It is a strong competitor to other non- volatile memories such as EPROMs and EEPROMs, and to some DRAM applications. HOW THE DEVICE WORKS The more common elementary flash cell consists of one transistor ONO DIELECTRIC POLY 2 WORD/SELECT with a floating gate, similar to an POLY 1 FLOATING EPROM cell. However, technology GATE and geometry differences between N+ S/D flash devices and EPROMs exist. In N+ S/D particular, the gate oxide between the silicon and the floating gate is thinner for flash technology. EPROM MEMORY CELL Source and drain diffusions are also different. These differences allow the flash device to be programmed POLYCIDE and erased electrically. Figures 10- ONO 1 and 10-2 show a comparison OXIDE ON N+ between a flash memory cell and an POLY 1 EPROM cell from a same manufac- N+ S/D turer (AMD) with the same technol- GATE OXIDE 1 ogy complexity. The cells look similar since the gate oxide thick- FLASH MEMORY CELL ness and the source/drain diffusion Photos by ICE, “Memory 1997” 22482 differences are not visible in the Figure 10-1. AMD EPROM Versus AMD Flash Memory Cells photographs. INTEGRATED CIRCUIT ENGINEERING CORPORATION 10-1 Flash Memory Technology Cell Gate Type Density Date Code Cell Size Length Flash 4Mbit 9406 6µm2 0.7µm EPROM 1Mbit 9634 5.52µm2 0.7µm Source: ICE, "Memory 1997" 22483 Figure 10-2. -
Date Product Name Description Product Type 01/01/69 3101 First
Date Product Name Description Product Type 01/01/69 3101 first Intel product, 64-bit Bipolar RAM 01/01/69 3301 1K-bit, Bipolar ROM Bipolar ROM discontinued, 1976 01/01/69 1101 MOS LSI, 256-bit SRAM 01/01/70 3205 1-of-8 decoder Bipolar logic circuit 01/01/70 3404 6-bit latch Bipolar logic circuit 01/01/70 3102 partially decoded, 256-bit Bipolar RAM 01/01/70 3104 content addressable, 16-bit Bipolar RAM 01/01/70 1103 1K DRAM 01/01/70 MU-10 (1103) Dynamic board-level standard memory Memory system system 01/01/70 1401 shift register, 1K Serial memory 01/01/70 1402/3/4 shift register, 1K Serial memory 01/01/70 1407 dynamic shift register, 200-bit (Dual Serial memory 100) 01/01/71 3207 driver for 1103 Bipolar logic circuit 01/01/71 3405 3-bit CTL register Bipolar logic circuit 01/01/71 3496 4-bit CTL register Bipolar logic circuit 01/01/71 2105 1K DRAM 01/01/71 1702 First commercial EPROM - 2K EPROM 11/15/71 4004 first microprocessor, 4-bit Microprocessor 01/01/72 3601 Bipolar PROM, 1K Bipolar PROM 01/01/72 2107 4K DRAM 01/01/72 SIM 4, SIM 8 Development systems Integrated system 01/01/72 CM-50 (1101A) Static board-level standard memory Memory system system 01/01/72 IN-10 (1103) System-level standard memory system Memory system 01/01/72 IN-11 (1103) Univac System-level custom memory system Memory system 01/01/72 8008 first 8-bit Microprocessor 01/01/72 1302 MOS ROM, 2K MOS ROM 01/01/72 2401/2/3/4 5V shift registers, 2K Serial memory 01/01/72 2102 5V, 1K SRAM 01/01/73 3001 microprogram control unit Bipolar bit-slice 3000 series 01/01/73 3002 central -
Intel Strataflash ® Memory
Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features ■ Performance ■ Architecture —110/115/120/150 ns Initial Access Speed —Multi-Level Cell Technology: High —125 ns Initial Access Speed (256 Mbit Density at Low Cost density only) —High-Density Symmetrical 128-Kbyte —25 ns Asynchronous Page mode Reads Blocks —256 Mbit (256 Blocks) (0.18µm only) —30 ns Asynchronous Page mode Reads —128 Mbit (128 Blocks) (256Mbit density only) —64 Mbit (64 Blocks) —32-Byte Write Buffer —32 Mbit (32 Blocks) —6.8 µs per byte effective ■ Quality and Reliability programming time —Operating Temperature: ■ Software -40 °C to +85 °C —Program and Erase suspend support —100K Minimum Erase Cycles per Block —Flash Data Integrator (FDI), Common —0.18 µm ETOX™ VII Process (J3C) Flash Interface (CFI) Compatible —0.25 µm ETOX™ VI Process (J3A) ■ Security ■ Packaging and Voltage —128-bit Protection Register —56-Lead TSOP Package —64-bit Unique Device Identifier —64-Ball Intel® Easy BGA Package —64-bit User Programmable OTP Cells —Lead-free packages available —48-Ball Intel® VF BGA Package (32 and —Absolute Protection with VPEN = GND —Individual Block Locking 64 Mbit) (x16 only) —Block Erase/Program Lockout during —VCC = 2.7 V to 3.6 V Power Transitions —VCCQ = 2.7 V to 3.6 V Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3) device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256- Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit- per-cell storage technology to the flash market segment.