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Latent Ion Tracks in Polymers for Future Use in Nanoelectronics: an Overview of T He Present State-Of-The-Art

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Latent Ion Tracks in Polymers for Future Use in Nanoelectronics: an Overview of T He Present State-Of-The-Art Brazilian Journal of Physics, vol. 25, no. 1, March, 1995 Latent Ion Tracks in Polymers for Future Use in Nanoelectronics: an Overview of t he Present State-of-the-Art D. Fink and R. Klett Hahn-Meitner-.lnstitut GmbH, Glienicker Str. 100 0-14109 Berlin, Germany Received January 10, 1994; revised manuscript received August 2, 1994 Latent ion tracks might turn out to be useful as active elements in future nanoelectronic devices, after appropriate doping. For this salíe, new work has recently been initiated for better ion track characterization, and for understanding the ion track doping mechanism. A review of the present state-of-the-art is given. I. Introduction jor meetings in different places of tlie world every two years[ll. It is known since about half a century ago tha.t ener- Due to tlie overwhelming success of the use of etched getic ions, after their passage through most insulating traclis ancl the difficulties to examine latent tracks in- materials, modify a certain zone aloiig tlieir trajectory, stead, interest in latent tracks has gradually decreased the so-called latent ion track, whicli is permanently visi- in the last decades. Only recently, some new ideas have ble in e.g. the transmission electron microscope (TEM). emergecl which led to a renaissance of latent track stud- The possibility to document iii this way tlie existence ies. One of them is related to the possibility of using and fate of individual ions has had a big impact on moclified individual (i.e. non-overlapping) latent ion many fields of science and teclinology, sucli as geology, tracks as f~ltureelectronically active elements of nano- mineralogy, oil exploratioii, paleontology, medicine, bi- metric dimensions in large-scale electronic devicesi2]. ology, materials science, space science, planetary sci- Tlie possible future use of these latent ion tracks in ence, nuclear physics, and nuclear chemistry. electronics would meet the trend to increasing degrees In most cases however, one does not observe nowa- of miniaturization in electronic~[~I(Fig.1). Apart from days these latent tracks themselves, but instead one this idea, the use of ion irradiation to inscribe sub- makes use of a very specific property of them, whicli micrometer conducting patterns (with overlapping ion is the enhanced etchability in agressive (mostly alka- tracks) in insulating polymer matrices is of great inter- line and oxydizing) solutions - a property whicli may est, and more applications might be found in optoelec- exceed the one of tlie corresponding bulk materials by tronics and membrane technology. orders of magnitude. Thus, by removing the chemically modified and hence sensitive part of the latent tracks, holes are created with diameters in the order of inicro- 11. Tlie coiicept of "Single Ion Track Electron- meters (so-called "etch tracks"), whicli are easily visible ics" (SITE) in optical microscopes, and thus open the way for more rapid ion tracli registration. Due to the importante of There exist severa1 approaches to realize electronic this technology, even an international society has been elements with smaller dimensions and hence higher formed tlie "Nuclear Track Societyl" l, which holds ma- storage clensities than available nowadays. One at- ' The International Nuclear Track Society (INTS), Secretary: tempt, called nanolithography, is crudely spoken - noth- Dr. P.Vater, Phillips-Universitat Marburg, Germany; temporary president: Dr. V.P. Perelygin, Dubna, Russia ing but an extrapolation of today's lithographic mask D. Fink and R. Iílett 5 5 meric material along individual latent ion tracks. This material is known to be enriched in sp2 bonds (occa- sionally e.g. in the form of conjugated double bonds, which exhibit especially high stability2), if the tracks have been produced by low energy ions. With increas- ing ion energy, i.e. with increasing deposited energy density, formation of complex matter such as aromatic or heterocyclic compounds and/or fullerenes along sin- gle ion tracks is also observed. This appears to hold for practically all hitherto examined polymers and other year organic matter (e.g. for PP, PI, PC, PMMA, PET, Figure 1: Historical development of the number of atoms needed for a storage device, after Ref. 3. Added are ex- PTF, and saccharose), and therefore we dare to make pectation values for nanolithography, molecular electronics, these statements in that generalized way. and SITE. For SITE, the different values shown correspond The idea to make use of organic materials enriched to different track sizes, ranging from: 10 A track diameter 2 4 and 10 pm length R up to: 100 A diameter and 100 pm in sp bonds in polymeric electronics is not new in itself. length. For exampIe, materials rich in conjugated double bonds - thiophenes and oligomers of thiophenes - have already techniques to smaller dimensions, by replacing today's been used for the production of FET's[~].Large blocks light sources by other ones of smaller wavelength, or of sp2 bond-rich materials are produced in industry by even by particle beams. Another one, the molecular chemical reactions, thermal treatment (pyrolysis), or electronics, can be regarded as the attempt to make by irradiation of polymers with UV, X rays, Gamma use of, and to modify God's finest technology - i.e. bi- rays or electrons. What is new here is the use of high ology - for human requirements. This approach is char- energy heavy ion irradiation, so that these materials acterized by a number of hitherto still quite unusual form small and well-defined structures with relatively electronic peculiarities, such as the task to handle two sharp borders within an else undisturbed matrix, and types of charge transport in coexistence - electrons for thus can be used for future nanometric-size electron- short range currents, and ions for long range currents -, ics. Most of these above mentioned modified materials an aqueous environment, complicated membrane chem- with double bonds, phenyl rings or fullerene structures istry, parallel data processing, high fault-tolerance, self- are insulators in their neutra1 ground states, if consid- assembly and self-reproducibility of the whole system. ered individually. Bowever, they become semiconduct- Due to the enormous difficulties involved, it is ing upon addition or removal of electrons, i.e. upon doubtful whether this fascinating technology can be doping. realized in the near future. We have therefore pro- It is well-ltnown that after low energy high dose ion posed another simpler approach to nanoelectronics by irradiation polymers transform into highly cross-linked making use of single (i.e. non-overlapping) latent carbon-based networks. Their electronic band structure ion tracks in non-conducting polymers[2] as active might possibly be intrinsically semiconducting, so that electronic elements. There exist similar approaches, e.g. doping could just act on this basis. In fact, phases by filling up etched tracks in inorganic solids (such as of a-C and a-C:H are known to behave as conducting mica) with semiconducting (e.g.si)L4] or metallic (e.g. and semiconducting material^[^^^]. It appears however Cu) matterf5], via electrolytic deposition. This tech- that this type of material modification is restricted to nique leads to somewhat larger device sizes as a result the case of multiple ion-track overlapping, and does not of the etching procedure. In this work we shall however occur in single ion iracks: We could demonstrate that concentrate on the use of latent tracks in polymers, and single ion tracks exhibit a very poor conductivity, so not discuss the application of etched tracks further. We want to make active use of the modified poly- 'as an example, see the nodificationof PE by 60 keV O+ 161. 56 Brazilian Journal of Physics, vol. 25, no. 1, March, 1995 that we can largely exclude the existence of tlie above of metal-doped ion traclt~[~]which, if connected prop- mentioned cross-linlted carbon-based networks and/or erly with some externa1 cooling facility, will act as heat extended phases of a-C or a-C:H. sinks. The relatively small track-to-track distances in Therefore, doping of latent ion tracks will be of es- such devices should enable, in principle, efficient heat sentia1 importance to activate these traclts electroni- removal. Further one might think at depositing the re- cally. Polymers can be 11- and p-doped[lO].Again, this latively thin polymer foils onto a thiclt metal substrate. is nothing new by itself - the feasibility of polymer dop- Secondly, tliere is tlie question of device stability in ing for producing electronic devices ha.s been ltnown for SITE. It is well-ltnown that many polymers undergo a long time[ll]: What is new here is tliat the dopants long-time clianges, and that dopants exhibit quite a are expected to act only in the spatially confined ion high diffusitivity in pristine polymers. If no precau- traclt regime, but not beyond. In earlier experiments tion was talten, this mobility would readily destroy any of polymer doping, the dopants have been diffused or newly prepared structural arrangement. There exist implanted at low energies into polymers. In the latter however ways to improve this situation. One is the case relatively high ion fluences hacl been used so that careful selectioii of appropriate polymeric materials. homogeneously modified materials ha.ve been formecl a.s Anotlier one is to suppress uiiwanted dopant mobility, the result of multiple track overlapping. For contrast, wliich can be clone by trapping the dopants at defects we are now interested in using ion bea.111~at very low along tlie traclts. Efficient trapping has the consequence fluences, so that a heterogeneous material results, witli that the dopants will migrate from the bulk towards the individual non-overlapping moclified and dopecl zones tracks ratlier than the otlier way round, and lience as- (latent tracks) within an else undisturbed matrix.
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