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Advanced NAND Flash Memory Single-Chip Storage Solution
SOLUTION SHEET: ADVANCED SOLID STATE MEMORY CONTROLLER Advanced NAND Flash Memory Single-Chip Storage Solution ? The growing complexity of flash memory management algorithms has made controller designs complex and has impacted the performance and the diversity of NAND devices that a single controller can support. As the complexity of the controller design increases, there comes a point where hardware acceleration is necessary. We see this trend for partial FTL (Flash Translation Layer) layers, addressing and wear leveling, and command queuing. At the same time, algorithms and flash device characteristics constantly change through the life of the controller. But data center managers expect the controller to constantly make design tradeoffs in order to improve in-system performance. These changes are also impacted by the traffic patterns of the application. The challenge is to provide hardware-accelerated algorithms that can change frequently in the field. The Context Solid-state storage based on NAND flash technology has become an important new lever for improving data-center performance and predictability. But the solid-state drives also present cost and predictability issues of their own. Surprisingly, these issues can be addressed through design of the flash memory controller. The NAND array has become the dominating factor for the cost of the drive. Increasing the life expectancy of the NAND array obviously reduces the total cost of ownership of the system. Also, the ability to reconfigure the controller to implement improved algorithms or to adapt to a new generation of flash chips extends the system life. Performance predictability and throughput are key concerns for data-center managers. -
Transcend Information, Inc. and Subsidiaries Consolidated Financial Statements And
TRANSCEND INFORMATION, INC. AND SUBSIDIARIES CONSOLIDATED FINANCIAL STATEMENTS AND INDEPENDENT AUDITORS’ REVIEW REPORT JUNE 30, 2020 AND 2019 ------------------------------------------------------------------------------------------------------------------------------------ For the convenience of readers and for information purpose only, the auditors’ report and the accompanying financial statements have been translated into English from the original Chinese version prepared and used in the Republic of China. In the event of any discrepancy between the English version and the original Chinese version or any differences in the interpretation of the two versions, the Chinese-language auditors’ report and financial statements shall prevail. ~1~ TRANSCEND INFORMATION, INC. AND SUBSIDIARIES CONSOLIDATED BALANCE SHEETS (Expressed in thousands of New Taiwan Dollars) (The consolidated balance sheets as of June 30, 2020 and 2019 are reviewed, not audited) June 30, 2020 December 31, 2019 June 30, 2019 Assets Notes AMOUNT % AMOUNT % AMOUNT % Current assets Cash and cash equivalents 6(1) $ 1,987,626 9 $ 1,233,407 6 $ 1,246,352 5 Financial assets at fair value through 6(2) profit or loss - current 2,225,342 10 2,581,509 12 1,164,332 5 Current financial assets at amortised 6(3) cost, net 7,051,329 32 7,910,482 37 10,805,014 48 Notes receivable, net 6(4) 524 - 3,054 - 3,246 - Accounts receivable, net 6(4) 1,315,397 6 1,478,531 7 1,739,440 8 Accounts receivable due from 7 related parties, net 6 - 8 - - - Other receivables 103,600 1 124,077 1 106,004 -
Phison's Resilient Business Model Generates Results Through
March 2020 Release EXECUTIVE SUMMARY Phison’s Resilient Business Phison’s diversified revenue contribution flows from a range of NAND applications including consumer, embedded, and Model Generates Results enterprise markets, making Phison less susceptible to global crisis incidents. through Challenging World During cyclical NAND price declines, Phison has demonstrated it can increase market share and unit shipments. Events During cyclical NAND price increases, Phison has demonstrated it can increase margin and revenue. _____________________________________ Over the past 20 years, Phison (TPEx: 8299) has endured the financial crisis of 2008, the cyclicality of NAND industry pricing related to supply and demand, and the introduction of new NAND technologies and emerging applications. Throughout these events, Phison maintained profitability while overcoming the challenges and generating business growth. Though the COVID-19 virus is currently impacting businesses worldwide, Phison continues to leverage its unique and resilient business model to generate results as it has successfully done in the past. PHISON’S BUSINESS MODEL Phison’s business model in Exhibit 1 is straightforward in simplicity but is underlined by massive engineering capability and flexible execution. Peer companies have attempted to study and replicate Phison’s model, but none have been successful to date. Exhibit 1: Phison’s unique business model of differentiated revenue and flexible execution. PHISON ELECTRONICS CORPORATION 1 March 2020 Release This model consists of 2 key elements: 1) NAND controller IC design, and 2) NAND storage module integration. Storage module integration is defined as manufacturing an entire functioning storage device including the controller, NAND and firmware under private labels for our valued customers. -
Redacted Public Version 28
Case3:11-cv-04689-WHO Document250 Filed06/11/14 Page1 of 109 MICHAEL S. ELKIN (admitted pro hac vice) 1 [email protected] THOMAS P. LANE (admitted pro hac vice) 2 [email protected] WINSTON & STRAWN LLP 3 200 Park Avenue New York, NY 10166-4193 4 Telephone: 212.294.6700 Facsimile: 212.294.4700 5 ERIN R. RANAHAN (No. 235286) 6 [email protected] DREW A. ROBERTSON (No. 266317) 7 [email protected] WINSTON & STRAWN LLP 8 333 S. Grand Avenue, Suite 3800 Los Angeles, CA 90071-1543 9 Telephone: 213.615.1700 Facsimile: 213.615.1750 10 DANIEL B. ASIMOW (No. 165661) 11 [email protected] ROBERT D. HALLMAN (No. 239949) 12 [email protected] ARNOLD & PORTER LLP 13 Three Embarcadero Center, 10th Floor San Francisco, CA 94111-4024 14 Telephone: 415.471.3100 Facsimile: 415.471.3400 15 Attorneys for Plaintiff 16 PNY TECHNOLOGIES, INC. 17 UNITED STATES DISTRICT COURT 18 NORTHERN DISTRICT OF CALIFORNIA 19 SAN FRANCISCO DIVISION 20 21 PNY TECHNOLOGIES, INC., Case No.: 11-cv-04689 WHO 22 Plaintiff, THIRD AMENDED COMPLAINT FOR 23 ANTITRUST VIOLATIONS; v. DECLARATORY RELIEF; AND 24 UNFAIR COMPETITION SANDISK CORPORATION, 25 DEMAND FOR JURY TRIAL Defendant. 26 27 REDACTED PUBLIC VERSION 28 PNY’S THIRD AMENDED COMPLAINT 11-cv-04689-WHO LA:355215.1 Case3:11-cv-04689-WHO Document250 Filed06/11/14 Page2 of 109 1 Plaintiff PNY Technologies, Inc. (“PNY”), by and through its attorneys, Winston & Strawn 2 LLP and Arnold & Porter LLP, files this Third Amended Complaint against Defendant SanDisk 3 Corporation (“SanDisk”) to secure damages, declaratory relief and injunctive relief, and demanding 4 trial by jury, claims and alleges as follows: 5 NATURE OF ACTION 6 1. -
Using Data Postcompensation and Predistortion to Tolerate Cell-To-Cell
2718 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 57, NO. 10, OCTOBER 2010 Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC NAND Flash Memory Guiqiang Dong, Student Member, IEEE, Shu Li, and Tong Zhang, Senior Member, IEEE Abstract—With the appealing storage-density advantage, mul- than 1 bit in each memory cell (or floating-gate MOS tran- tilevel-per-cell (MLC) NAND Flash memory that stores more than sistor) by programming the cell threshold voltage into one 1 bit in each memory cell now largely dominates the global Flash of voltage windows, has been widely used to further memory market. However, due to the inherent smaller noise NAND margin, the MLC NAND Flash memory is more subject to various improve the Flash memory storage density. Because of device/circuit variability and noise, particularly as the industry is its obvious advantages in terms of storage density and, hence, pushing the limit of technology scaling and a more aggressive use cost, MLC NAND Flash memory now largely dominates the of MLC storage. Cell-to-cell interference has been well recognized global Flash memory market. In current design practice, most as a major noise source responsible for raw-memory-storage MLC NAND Flash memories store 2 bits per cell, while 3- and reliability degradation. Leveraging the fact that cell-to-cell in- terference is a deterministic data-dependent process and can even 4-bit-per-cell NAND Flash memories have been recently be mathematically described with a simple formula, we present reported in the open literature [2]–[6]. -
Phison Electronics Corporation 2016 ANNUAL REPORT
ި౻жዸǺ8299 ဂᖄႝηިҽԖज़Ϧљ Phison Electronics Corporation Ʉϖԃࡋ ԃ ൔ 2016 ANNUAL REPORT ԃൔ၌ᆛ֟ Ϧ໒ၗૻᢀෳઠᆛ֟Ǻhttp://mops.twse.com.tw ҁ Ϧ љ ᆛ ֟Ǻwww.phison.com т ӑ В ය Ǻ ύ ҇ ୯ Ʉ Ϥ ԃ ϖ Д Β Μ Ϥ В Ӝ/ᙍᆀ/ᖄ๎ႝ၉/ႝηແҹߞጃۉΓقz Ϧљว மדӜǺΪ ۉ ᙍ ᆀǺၗుձշ ႝ၉Ǻ(037) 586-896 ext.1019 ႝηແҹߞጃǺ[email protected] Ӝ/ᙍᆀ/ᖄ๎ႝ၉/ႝηແҹߞጃۉΓقz Ϧљжว ਁ۔ӜǺ ۉ ᙍ ᆀǺձշ ႝ၉Ǻ(037) 586-896 ext. 1029 ႝηແҹߞጃǺ[email protected] z ᕴϦљ/ϩϦљ/πቷϐӦ֟Ϸႝ၉ ᕴϦљ Ӧ ֟ǺཥԮᑜԮчѱൺᑫຉ 251 ဦ 10 ኴϐ 6 ႝ၉Ǻ(03)657-9299 ԮࠄϩϦљϷπቷ Ӧ ֟ǺभਪᑜԮࠄᙼဂကၡ 1 ဦϷभਪᑜԮࠄᙼဂကၡ 1-1 ဦ ႝ၉Ǻ(037)586-896 z ި౻ၸЊᐒᄬϐӜᆀ/Ӧ֟/ᆛ֟/ႝ၉ ҽԖज़Ϧљ ި୍жިچӜ ᆀǺֻᇻ Ӧ ֟ǺѠчѱεӼߞကၡѤࢤ 236 ဦ 3 ኴ ᆛ֟Ǻwww.honsec.com.tw ႝ၉Ǻ(02)2326-8818 Ӝᆀ/Ӧ֟/ᆛ֟/ႝ၉܌٣୍/Ӝۉz ന߈ԃࡋ୍ൔᛝीৣ ӜǺᔎߞᆢǵणԖۉीৣ ܌ӜᆀǺ༇ߞᖄӝीৣ٣୍܌٣୍ Ӧ ֟ǺѠчѱ҇ғܿၡΟࢤ 156 ဦ 12 ኴ ᆛ֟Ǻwww.deloitte.com.tw ႝ၉Ǻ(02)2545-9988 ၗૻϐБԄǺคǶچӜᆀϷ၌၀ੇѦԖሽ܌จວ፤ϐҬܰچz ੇѦԖሽ z Ϧљᆛ֟Ǻwww.phison.com ဂᖄႝηިҽԖज़Ϧљ Ʉϖԃࡋԃൔ Ҟ ᒵ ൘ǵठިܿൔਜ........................................................................................................... 1 ǵ 105 ԃࡋᔼ่݀.................................................................................................................... 1 Βǵ 106 ԃࡋᔼीჄཷा............................................................................................................ 3 ѦᝡݾᕉნǵݤೕᕉნϷᕴᡏᔼᕉნϐቹៜ ................... 4ډڙΟǵ ҂ٰϦљวౣǵ ມǵϦљᙁϟ................................................................................................................... 5 ǵ ҥВය................................................................................................................................... 5 Βǵ Ϧљݮॠ.................................................................................................................................. -
Product Test Report
PCIe 2280 M.2 SSD MTE652T2 Datasheet Products Product Description TS512GMTE652T2 M.2 2280, PCIe Gen3x4, M-Key, 3D TLC, PE: 3K, 4CH, 30u” TS256GMTE652T2 TS128GMTE652T2 Datasheet version 1.1 No.70, Xingzhong Rd., Neihu Dist.,Taipei City 114, Taiwan, R.O.C. Tel:+886-2-2792-8000 Fax:+886-2-2792-1614 www.transcend-info.com Copyright© Transcend Information, Inc. All Rights Reserved. 1 Revision History Revision No. History Released Date Editor by 1.0 First version (WD BICS4) 2020/05/26 TSD Extended the Temperature Storage from -55°C to 85°C 1.1 Added 5.2.11 Early Move Function 2020/08/25 TSD Added 5.2.12 Read Retry Function 2 Transcend MTE652T2 Features Part Name Capacity TS512GMTE652T2 512GB TS256GMTE652T2 256GB TS128GMTE652T2 128GB FEATURES PCI Express Gen3 x 4, NVMe 3D TLC NAND Flash UBER 10-15 M.2 PCIe 2280 M Key DWPD 2 DWPD DDR3 DRAM cache MTBF 3,000,000 hours Global wear-leveling function Data Retention 1 year Enhance Bad block management Warranty 3 years Power shield function LDPC ECC (Error correction code) functionality ENVIRONMENTAL SPECIFICATIONS1) NVM command support Temperature Advanced Garbage Collection - Operating -20°C to 75°C Internal RAID Engine - Non-operating -55°C to 85°C Supports S.M.A.R.T. Function Humidity(non-condensing) 5%~95% PCB Gold Finger 30u” Shock 1500G, 0.5ms Dynamic Thermal Throttling (Default) Vibration 20G, 7~2000Hz Self-encrypting drives(SED) with AES-256 (Optional) POWER REQUIREMENTS1) Corner Bond (Key components) Supply voltage / Tolerance 3.3V±5% Active (max) 3.3W 1) PERFORMANCE Idle (max) 0.6W Data Transfer Rate - Sequential Read Up to 2100 MB/s PHYSICAL DIMENSION - Sequential Write Up to 1000 MB/s Width 22.00±0.15mm Length 80.00±0.15mm 1) RELIABILITY Height(max) 3.58mm TBW Weight Up to 9g - 512GB 1,080TB Note: - 256GB 540TB 1) For detail information, please refer to document content. -
SPANSION INC., Et Al. Debtors. Chapter 11 Cases
THIS PROPOSED DISCLOSURE STATEMENT IS NOT A SOLICITATION OF ACCEPTANCES OR REJECTIONS OF THE PLAN. ACCEPTANCES AND REJECTIONS MAY NOT BE SOLICITED UNTIL A DISCLOSURE STATEMENT HAS BEEN APPROVED BY THE BANKRUPTCY COURT. THIS PROPOSED DISCLOSURE STATEMENT IS BEING SUBMITTED FOR APPROVAL BUT HAS NOT YET BEEN APPROVED BY THE BANKRUPTCY COURT. UNITED STATES BANKRUPTCY COURT FOR THE DISTRICT OF DELAWARE In re: Chapter 11 Cases SPANSION INC., et al.1 Case No. 09-10690 (KJC) Debtors. (Jointly Administered) FIRST AMENDED DISCLOSURE STATEMENT FOR DEBTORS’ FIRST AMENDED JOINT PLAN OF REORGANIZATION DATED NOVEMBER 25, 2009 LATHAM & WATKINS LLP Michael S. Lurey Gregory O. Lunt Kimberly A. Posin 355 South Grand Avenue Los Angeles, CA 90071 Telephone: (213) 485-1234 Facsimile: (213) 891-8763 DUANE MORRIS, LLP Michael R. Lastowski Richard W. Riley Sommer L. Ross 1100 North Market Street, Suite 1200 Wilmington, DE 19801 Telephone: (302) 657-4900 Facsimile: (302) 657-4901 Counsel for the Debtors and Debtors in Possession 1 The Debtors in these cases, along with the last four digits of each Debtor’s federal tax identification number, are: Spansion Inc., a Delaware corporation (8239); Spansion Technology LLC, a Delaware limited liability company (3982); Spansion LLC, a Delaware limited liability company (0482); Cerium Laboratories LLC, a Delaware limited liability company (0482), and Spansion International, Inc., a Delaware corporation (7542). The mailing address for each Debtor is 915 DeGuigne Dr., Sunnyvale, California 94085. LA\2030380.6 TABLE OF CONTENTS -
2Q 2012 Company Fact Sheet
www.siliconmotion.com Company Fact Sheet 2Q 2012 Quick Facts Founded 1995 Silicon Motion is a global leader and pioneer in developing microcontroller ICs for NAND flash storage devices and specialty RF ICs for mobile devices. Our products are widely IPO 2005 used in many of the leading smartphones and other mobile devices in the market today. NasdaqGS SIMO More NAND flash products, especially next generation flash, whether produced by Revenue US$224 million (2011) Samsung, SanDisk, Toshiba, Micron, Intel or SK Hynix, are supported by Silicon Motion Employees 642 (2011 year-end) controllers than any other company. Silicon Motion leads the industry in supplying innovative controllers for managing the the most advanced process geometry NAND flash and the latest generation TLC (3-bits per cell) flash. We are a leader in memory card and flash drive controllers and are increasingly focused on eMMC and SSD controllers for Revenue Mix (2Q 2012) smartphones, tablets, and notebook PCs. Silicon Motion is also a dedicated provider of 4G LTE transceivers for Samsung’s smartphone and tablets, as well as a leading provider of mobile TV ICs. We market our Mobile Storage products under the “SMI” brand and Mobile Communications products under the “FCI” brand. 73% Mobile Storage Mobile Storage 22% Rapid growing Solid State Drive (SSD) and embedded flash Mobile Communications controllers, including for eMMC, that target storage needs in a wide range of devices including smartphones, tablets, notebook PCs, as well as networking and industrial applications -
Fiscal Year 2020 Form 10-K
UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 Form 10-K (Mark One) ☒ ANNUAL REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the fiscal year ended February 1, 2020 or ☐ TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the transition period from to Commission file number 0-30877 Marvell Technology Group Ltd. (Exact name of registrant as specified in its charter) Bermuda 77-0481679 (State or other jurisdiction of (I.R.S. Employer incorporation or organization) Identification No.) Canon’s Court, 22 Victoria Street, Hamilton HM 12, Bermuda (Address of principal executive offices) (441) 296-6395 (Registrant’s telephone number, including area code) Securities registered pursuant to Section 12(b) of the Act: Title of each class Trading Symbol Name of each exchange on which registered Common shares, $0.002 par value per share MRVL The Nasdaq Stock Market LLC Securities registered pursuant to Section 12(g) of the Act: None Indicate by check mark if the registrant is a well-known seasoned issuer, as defined in Rule 405 of the Securities Act. Yes ☐ No ☒ Indicate by check mark if the registrant is not required to file reports pursuant to Section 13 or Section 15(d) of the Act. Yes ☐ No ☒ Indicate by check mark whether the registrant (1) has filed all reports required to be filed by Section 13 or 15(d) of the Securities Exchange Act of 1934 during the preceding 12 months (or for such shorter period that the registrant was required to file such reports), and (2) has been subject to such filing requirements for the past 90 days. -
2Q 2014 Company Fact Sheet
www.siliconmotion.com Company Fact Sheet 2Q 2014 Quick Facts We are a fabless semiconductor company that designs, develops and markets high performance, low-power semiconductor solutions to OEMs and other customers in the Founded 1995 mobile storage and mobile communications markets. For the mobile storage market, our IPO 2005 key products are microcontrollers used in solid state storage devices such as SSDs, eMMCs and other embedded flash applications, as well as in removable storage products NasdaqGS SIMO such as memory cards and USB flash drives. More NAND flash products, especially next Revenue US$225 million (2013) generation flash, whether produced by Samsung, SanDisk, Toshiba, Micron or SK Hynix Employees 731 (2013 year-end) are supported by Silicon Motion controllers than any other company. We are the leading merchant supplier of controllers for eMMC embedded memory used in smartphones and tablets and are increasingly focused on client SSD controllers for PCs and other applications. For the mobile communications market, our key products are handset Revenue Mix (2Q 2014) transceivers and mobile TV SoCs. We are the dedicated provider of 4G LTE transceivers for Samsung’s smartphones and tablets. We market our Mobile Storage products under the “SMI” brand and Mobile Communications products under the “FCI” brand. Mobile Storage Our SSD+Embedded products include eMMC controllers for Mobile embedded memory in smartphones and tablets, SATA III client Communications 85% Mobile Storage SSD controllers for PCs and Ultrabooks, and FerriSSD -
Aspire 1700 SG-Book.Book
Acer Aspire 1700 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.A08V7.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 800 service guide. Date Chapter Updates 2 Copyright Copyright © 2003 by Acer Incorporated. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language or computer language, in any form or by any means, electronic, mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written permission of Acer Incorporated. Disclaimer The information in this guide is subject to change without notice. Acer Incorporated makes no representations or warranties, either expressed or implied, with respect to the contents hereof and specifically disclaims any warranties of merchantability or fitness for any particular purpose. Any Acer Incorporated software described in this manual is sold or licensed "as is". Should the programs prove defective following their purchase, the buyer (and not Acer Incorporated, its distributor, or its dealer) assumes the entire cost of all necessary servicing, repair, and any incidental or consequential damages resulting from any defect in the software. Acer is a registered trademark of Acer Corporation. Intel is a registered trademark of Intel Corporation. Pentium and Pentium II/III are trademarks of Intel Corporation. Other brand and product names are trademarks and/or registered trademarks of their respective holders. 3 Conventions The following conventions are used in this manual: SCREEN MESSAGES Denotes actual messages that appear on screen.