crystals Article Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures Evgeny E. Ashkinazi 1, Roman A. Khmelnitskii 2,3,4, Vadim S. Sedov 1, Andrew A. Khomich 1,3, Alexander V. Khomich 1,2,3,* and Viktor G. Ralchenko 1,5 1 Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilova Str. 38, Moscow 119991, Russia;
[email protected] (E.E.A.);
[email protected] (V.S.S.);
[email protected] (A.A.K.);
[email protected] (V.G.R.) 2 Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Av. 53, Moscow 119991, Russia;
[email protected] 3 Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Vvedenskogo Sq. 1, Fryazino 141190, Russia 4 Troitsk Institute for Innovation and Fusion Research, Pushkovykh Str. 12, Troitsk, Moscow 142190, Russia 5 Harbin Institute of Technology, 92 Xidazhi Str., Harbin 150001, China * Correspondence:
[email protected] Academic Editor: Yuri N. Palyanov Received: 30 April 2017; Accepted: 31 May 2017; Published: 6 June 2017 Abstract: Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD) films are produced on other planes.