ISTFATM 2009

Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis

November 14–19, 2009 San Jose McEnery Convention Center San Jose, California, USA

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First printing, November 2009

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ISBN-13:978-1-61503-008-8 ISBN-10: 0-61503-008-5 SAN: 204-7586

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EDFAS 2009-2010 BOARD OF DIRECTORS

EDFAS President EDFAS Vice President Mr. Tracy D. Myers Dr. Thomas Moore ON OmniProbe

Board Members Affiliation Mr. Tracy D. Myers EDFAS President ON Semiconductor Dr. Thomas Moore EDFAS Vice President OmniProbe Mr. Jeremy A. Walraven Secretary Sandia National Laboratories Dr. Lee Knauss Finance Officer Booz Allen Hamilton Mr. Gary Shade Past President Insight Analytical Labs Ms. Sandra Delgado Member at Large Nanolab Technologies Mr. Thomas S. Passek Executive Director ASM International Ms. Susan Li Member at Large Spansion Dr. Philippe Perdu Member at Large CNES Mr. Matthew Thayer Member at Large Advanced Micro Devices Mr. David P. Vallett Member at Large IBM Systems and Technology

Board Committees Affiliation Dr. Charles A. Parker ASM BOT Liaison Honeywell Aerospace Ms. Rosalinda M. Ring EDFA Chair SMSC Austin Mr. Thomas Zanon Education Chair PDF Solutions Inc. Mr. William E. Vanderlinde Events Chair IARPA Dr. Aaron Falk Journal Chair Quantum Focus Instruments Corp. Mr. John West Membership Chair Texas Instruments Mr. Gary Shade Nominating Chair Insight Analytical Labs Mr. Jeremy Walraven Website Chair Sandia National Laboratories

iii

ORGANIZING COMMITTEE

Nicholas Antoniou William E. Vanderlinde Jeremy Walraven Dan Bodoh James Demarest General Chair Vice General Chair Technical Program Chair Tutorial Chair Tutorial Vice Chair Harvard University IARPA Sandia National Laboratories Freescale Semiconductor IBM

David P. Vallett Immediate Past General Chair IBM Systems & Technology Group

Activities Chairs

Martin Keim Ed Keyes Philippe Perdu Panel Chair Exposition Chair User’s Group Chair Mentor Graphics Corp. Semiconductor Insights CNES

Efrat Raz-Moyal Dave Vallett Zhiyong Wang Publicity/Local Arrangements EDFAS Liaison Audio/Visual Chair Chair IBM Systems & Technology Group Intel Corporation Omniprobe, Inc.

iv ISTFA 2009 TUTORIAL COMMITTEE

ISTFA 2009 Tutorial Program Chair

Dan Bodoh Freescale Semiconductor

Tutorial Committee Chair Topic Affiliation

Fault Isolation, Lab Management, Dan Bodoh Technology Specific FA, Freescale Semiconductor The Periphery of FA

James Demarest (vice-chair) Fault Isolation, Microscopy IBM Susan Li Fault Isolation, Microscopy Spansion Focused Ion Beam (FIB), Chris Richardson Microscopy, LSI Logic Technology Specific FA Die and Defect Access, Chad Rue FEI Company Technology Specific FA

Die and Defect Access, Sam Subramanian Technology Specific FA, Freescale Semiconductor, Inc The Periphery of FA

Jeremy A. Walraven Technology Specific FA Sandia National Laboratories

v ISTFA 2009 SYMPOSIUM COMMITTEE

ISTFA 2009 Technical Program Chair

Jeremy A. Walraven Sandia National Laboratories

Advanced Metrology & System Emerging Concepts Photon Beam Based Techs. 1 Level FA MIKE BRUCE (CHAIR), FELIX BEUDOIN (CHAIR), IBM SAM SUBRAMANIAN (CHAIR), Independent Consultant PHILIPPE PERDU (CO-CHAIR), CNES Freescale Semiconductor, Inc. DAN BODOH (CO-CHAIR), Franco Stellari, IBM Freescale Semiconductor, Inc. Herve Deslandes, DCG Systems JAMES DEMAREST (CO-CHAIR), IBM Jerome Touzel, Infineon Technologies George Lange, Freescale Semiconductor, Inc. Jiann Min Chin, AMD Frank Zacchariasse, NXP Ted Kolasa, Freescale Semiconductor, Inc. Susan Li, Spansion Eckhard Langer, Global Foundries Srikanth Perungulam, Texas Instruments Failure Analysis Process Photon Beam Based Techs. 2 STEVE IPPOLITO (CHAIR), IBM JIM COLVIN (CHAIR), APEK MULAY (CHAIR), AARON FALK (CO-CHAIR), Texas Instruments FA Instruments Dave Burgess, Accelerated Analysis QFI/Optometrix DAVID L. BURGESS (CO-CHAIR), Vijay Chowdhury, Evans Analytical Group Christof Brillert, Infineon Technologies Accelerated Analysis Carl Nail, Independent Consultant Tohru Koyama, Renesas Syed Ali, Volt Technical Resources Rose Ring, SMSC Hirotoshi Terada, Hamamatsu Carlos Arroyave, Skyworks Inc. Winfield Scott, MEFAS Phil Kaszuba, IBM Nanoprobing Bhanu Sood, University of Maryland Posters TAYLOR CAVANAH (CHAIR), Zyvex Instruments SCOTT WILLS (CHAIR), Alternative Energy Independent Consultant PETER HARRIS (CO-CHAIR), CHRISTIAN BOIT (CHAIR), David Paul , Texas Instruments University of Berlin Multiprobe Inc. Phu Thy Do, Texas Instruments Stefan Gall, Berlin Helmholtz Center Larry Liu, Texas Instruments Sarah Kurtz, NREL Terry Kane, IBM Jef Poortmans, IMEC Randy Mulder, Freescale Semiconductor, Inc. Sample Preparation Andy Saxonis, Analog Devices BECKY HOLDFORD (CHAIR), Circuit Edit Texas Instruments TED LUNDQUIST (CHAIR), Packaging/Assembly Level FA ROBERT CHAMPAIGN (CO-CHAIR), DCG Systems JAMES DEMAREST (CHAIR), IBM Raytheon Carol Boye, IBM Jake Klein, Texas Instruments RYAN ROSS (CO-CHAIR), Ted Levin, IBM David Su, TSMC Freescale Semiconductor, Inc. Andrew Mawer, Freescale Semiconductor, Inc. Bryan Tracy, Spansion Marsha Abramo, Independent Consultant Jessica Tucker, Aerospace Corporation Yuval Greenzweig, Intel Mike Phaneuf, Fibics Incorporated Chris Richardson, LSI

vi EDFAS 2009 Photo Contest Winner, First Place Color: An image of an EOS site after decapsulation of a power device. It looks like a smiley face. Deborah Romero International Rectifier Corporation

Think Big. Be part of ISTFATM 2010.

We invite you to submit your work for publication and to present to the industry in Dallas, Texas for November 14-18, 2010 the 36th year of ISTFA. Advance the industry. Intercontinental Hotel Present and be a part of ISTFA 2010. Dallas, Texas USA Submit your abstract today. Calling all experts! Abstract Submission Deadline: April 2, 2010 Go to www.istfa.org. Share your experiences and advance the industry at ISTFA 2010, the premier event for the electronics failure analysis community.

The high technology industry has been one of ASM International® the fastest growing industries in the world, in 9639 Kinsman Road Materials Park, Ohio 44073-0002 the US, in the state of Texas and in the 800.336.5152 Dallas/Fort Worth area.

Contents

IPFA 09 Best Paper

An Advanced Reliability Improvement and Failure Analysis Approach to Thermal Stress Issues in IC Packages ...... 1 Michael Hertl1, Diane Weidmann1, and Alex Ngai2 (1) Insidix, Grenoble/Seyssins, France; (2) Teltec Semiconductor Pacific Ltd.,

Session 1: Emerging Concepts

Gradient Thermal Analysis by Induced Stimulus ...... 6 Jim Colvin FA Instruments, Inc., San Jose, CA USA

Measurement of Bit Leakages in a Functional SRAM ...... 16 Xiaowei Deng, Wah Kit Loh, Beena Pious, Jayesh Raval, Bashar Khan, Larry Liu, Taylor Lowry, DB Yoon, Theodore W. Houston, Randy McKee, Abha Singh Kasper, and Dan Corum Texas Instruments Inc., Dallas, TX, USA

Extended Circuit Edit, Analysis and Trimming Capabilities Based on the Backside Focused Ion Beam Created Ultra Thin Silicon Platform ...... 21 Rudolf Schlangen1, Rainer Leihkauf1, Uwe Kerst1, Christian Boit1, Peter Egger2, and Ted Lundquist3 (1) Berlin University of Technology, Berlin, Germany; (2) Infineon Technologies AG, Munich, Germany; (3) DCG Systems Inc., Fremont, CA, USA

Subsurface Imaging of Multi-Level Integrated Circuits Using Scanning Electron Acoustic Microscopy ...... 27 1 2 1 L. Meng , A.G. Street , and J.C.H. Phang (1) National University of ; (2) Qualcomm CDMA Technologies, San Diego, CA, USA

Laser Timing Probe with Frequency Mapping for Locating Signal Maxima ...... 33 1 2 1 1 1, 3 L.S. Koh , H. Marks , L.K. Ross , C.M. Chua , and J.C.H. Phang (1) SEMICAPS Pte Ltd, Singapore; (2) NVIDIA Corporation, Santa Clara, CA, USA; (3) National University of Singapore

ix Session 2: Photon Beam Based Techniques – 1

Pseudo-Soft Defect Localization ...... 38 Paiboon Tangyunyong, Rick McFarland, and Richard S. Flores, Sean Pearson, and Marco O. Sanchez Sandia National Laboratories, Albuquerque, NM, USA

Software Enhanced Time Resolved Laser Assisted Device Alteration with a Non-Pulsed Laser Source ...... 43 Kent Erington, John Asquith, and Dan Bodoh Freescale Semiconductor, Austin, TX, USA

From Static to Full Dynamic Laser Stimulation ...... 52 A. Deyine1, K. Sanchez1, P. Perdu1, F. Battistella1, H. Deslandes2, and D. Lewis3 (1) Thales & CNES Laboratory, Toulouse, France; (2) DCG System, Fremont, CA, USA; (3) IMS Laboratory, Talence, France

Annular Illumination and Collection in Solid Immersion ...... 60 Stephen Bradley Ippolito1 and Hirotoshi Terada2 (1) IBM Semiconductor Research & Development Center, Hopewell Junction, NY, USA; (2) Hamamatsu Photonics, Hamamatsu City,

Backside IR Raman Temperature Measurements ...... 65 R. Aaron Falk1, Tram Pham1, and Grant Albright2 (1) Quantum Focus Instruments Corp., Tukwila, WA, USA; (2) Quantum Focus Instruments Corp., Vista, CA, USA

Session 3: Nanoprobing

Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) Localization of 32nm SOI SRAM Array Failure ...... 73 Terence Kane and Michael P. Tenney IBM Systems and Technology Group, Hopewell Junction, NY, USA

The SRAM Soft Failure Analysis with SNM & TR Characterization by Nanoprobing in Sub 45nm ...... 76 Jakyung Hong, S.J. Cho, Y.W. Han, H.S. Choi, T.E. Kim, S.J. Son, H.S. Kim, S.D. Kwon, and Y.S. Oh Samsung Electronics Co., Korea

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique ...... 81 E. Hendarto, S.L. Toh, J. Sudijono, P.K. Tan, H. Tan, Y.W. Goh, L. Zhu, Q. Deng, H.B. Lin, R. He, H.L. Li, Z.H. Mai, and J. Lam Chartered Semiconductor Manufacturing Ltd, Singapore

x Electrical Signature Verification of a Lightly Doped Drain Profile Abnormality in a 65nm Device via Nano-Probing and Junction Stain TEM ...... 88 Jie Su, Sanan Liang, Yoyo Wen, May Yang, Linfeng Wu, Chorng Niou, Xianfeng Chen, and Gary Zhao Semiconductor Manufacturing International Corporation, Beijing, P.R.

FAMOS Fail Bit Verification /Characterization via NanoProbe ...... 93 Mark Dexter1, Richard Stallcup II2, and Sarma Gunturi1 (1) Texas Instruments, Inc. Dallas, TX; (2) Zyvex Corp., Richardson, TX

Session 4: Circuit-Edit

Methodologies for Quantifying FIB “Milling Acuity” ...... 97 Chad Rue FEI Company, Hillsboro, OR, USA

Novel Dielectric Etch Chemistry for the Next Generation of Circuit Edit: Delicate to Low-k Dielectrics and Silicon ...... 106 Vladimir V. Makarov1, Leo Krasnobayev1, and Sabina F. Misquitta2 (1) Tiza Lab, LLC, Milpitas, CA, USA; (2) Advanced Circuit Engineers, LLC, Milpitas, CA, USA

Global Die Ultra-Thin Silicon for Backside Diagnostics and Circuit Edit ...... 110 Dane Scott1, Erin O’Donnell1, Tahir Malik2, and Rajesh Jain2 (1) Intel Corporation, Folsom, CA, USA; (2) DCG Systems, Inc., Fremont, CA, USA

A Versatile Design of Solid Immersion Lenses in Bulk Silicon Using Focused Ion Beam Techniques ...... 119 P. Scholz1, U. Kerst1, C. Boit1, C.-C. Tsao2, and T. Lundquist2 (1) Berlin University of Technology, Berlin, Germany; (2) DCG Systems, Fremont, CA, USA

Session 5: Sample Preparation

Localized Epoxy Layer Formation on Surface Defect Using a Micro-Brush in a Plucking System ...... 126 Kun-Lin Lin, Jian-Shing Luo, Hsiu-Ting Lee, and Jeremy D. Russell Inotera Memories Inc., Taoyuan,

Deterministic Polishing Applications in Failure Analysis ...... 130 Mark Kimball Maxim Integrated Products, Hillsboro, OR, USA

Near-Infrared Microscopy in Semiconductor Failure Analysis Applications ...... 135 Thomas B. Davis, Robert Reagan, Yangyang Sun, and Tom Jiang Micron Technology Inc., Boise, ID, USA

xi Low Temperature O2 Plasma Process for Scanning Capacitance Sample Preparation ...... 140 Donald W. Schulte, Terry McMahon, David D. Hall, Mark Johnson, William Stickle, Craig Sanders, Greg Long, Gary DeHaan, and Ruhua Cai Hewlett Packard Company, Corvallis, OR, USA

Non-Destructive Failure Analysis in Organic Thin-Film Transistors ...... 144 Shih-Ting Liu1, Tao-Chi Liu1, Ming-Lun Chang1, King-Ting Chiang1, Su-Ping Chiu1, Jandel Lin1, Po-Yuan Lo2, and Pei-Wen Li2 (1) Integrated Service Technology Inc., Hsin-chu, Taiwan (R.O.C.); (2) National Central University, Taoyuan, Taiwan (R.O.C.)

Session 6: Alternative Energy

Comparative Failure Analysis of Photovoltaic Devices ...... 149 Jim Colvin FA Instruments, Inc., San Jose, CA, USA

Analysis of Poly-Si Solar Cells by IR-LBIC ...... 157 M. Boostandoost1, H.-P. Lin1, U. Kerst1, C. Boit1, and S. Gall2 (1) Berlin University of Technology, Berlin, Germany; (2) Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

Failure Analysis of Breakdown Sites in Silicon Solar Cells ...... 162 Otwin Breitenstein1, Jan Bauer1, Jan-Martin Wagner1, Horst Blumtritt1, Nikolai Zakharov1, and Andriy Lotnyk2 (1) Max Planck Institute of Microstructure Physics, Halle, Germany; (2) Christian-Albrecht-University, Kiel, Germany

Approaches to Photovoltaic Systems Reliability ...... 166 Jennifer E. Granata, Elmer Collins, and Mike Mundt, N. Robert Sorensen and Michael A. Quintana Sandia National Laboratories, Albuquerque, NM, USA

Session 7: Posters

Writing Better Research Reports ...... 171 Thomas B. Davis Micron Technology, Inc., USA

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Fabrication ...... 177 Hua Younan, Chu Susan, Gui Dong, Mo Zhiqiang, Xing Zhenxiang, Liu Binghai, Ng Adrian, and Tsai Tony Chartered Semiconductor Manufacturing Ltd, Singapore, Singapore

Instrumental Discrepancy and Relation of Stress Condition between ESD Association and JEDEC Standards on ESD CDM Test ...... 182 Yuparwadee Satirakul, Tanawat Butngam, and Surapol Phunyapinuant Spansion (Thailand) Limited, Nonthaburi, Thailand xii

Doping Profile Inspected by SEM Dopant Contrast, Wet Stain and SCM ...... 189 Po Fu Chou and Chun Yen Chen United Microelectronics Corporation, Ltd., Taiwan, R.O.C.

Case Study: Failure Analysis of Functional Shmoo Hole with Laser Voltage Probing ...... 193 S.H. Lee1, Y.W. Lee1, K.T. Lee1, C.Y. Choi1, H.W. Shin2, Yin S. Ng3, and T.R. Lundquist3 (1) Samsung Electronics Co. Ltd., Ki-hung, ; (2) NEOSEM Inc., Su-won, South Korea; (3) DCG Systems, Inc., Fremont, CA, USA

In Situ Removal of Polyimide Layer Using Modified Decapsulator ...... 198 C. Ramachandra1, B.M. Sweety1, U.G. Chandan1, D. Jaypal1, Sarat Kumar Dash2, M. Ravindra2, and A.M. Khan3 (1) Tessolve Services Pvt. Ltd., Bangalore, India; (2) ISRO Satellite Centre, Bangalore, India; (3) Mangalore University, Karnataka, India

Surface Effect on SEM Voltage Contrast and Dopant Contrast ...... 202 Lai Li-Lung1, Huimin Gao2, and Hong Xiao3 (1) Semiconductor Manufacturing International Corp.; (2) WuHan Xinxin Semiconductor Manufacturing Corp. WuHan, HuBei, China; (3) Hermes Microvision, Inc., San Jose, CA, USA

Back-End-of-Line Quadrature-Clocked Voltage-Dependent Capacitance Measurements ...... 208 Stas Polonsky1, Paul Solomon1, Mark Ketchen1, Ernesto Shiling2, Laertis Economikos2, and Manjul Bhushan2 (1) IBM Research, Yorktown Heights, NY, USA; (2) IBM Systems and Technology Group, Hopewell Junction, NY, USA

The Novel TEM Sample Preparation Approach for Targeted via with Barrier/Cu Seed Layer Inspection ...... 214 Wen-Fei Hsieh, Shih-Hsiang Tseng, and Bo Min She, United Microelectronics Corporation, Tainai, Taiwan, R.O.C.

Decapsulation Techniques for Cu Wire Bonding Package ...... 217 Dongmei Meng, Joe Rupley, and Chris McMahon LSI Corporation, Fort Collins, CO, USA

Evaluation Trial of MEMs Devices by LSI Process Diagnostics ...... 222 Wataru Shimizu, Hidehisa Kubota, Daisuke Murahara, Noriko Nakamura, Hirokazu Kamiyama, Tamiko Oda, and Kazuhiro Yabe Oki Engineering Co., Ltd., Japan

A Novel Technique of Device Measurement after Cross-Sectional FIB in Failure Analysis ...... 230 Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Chih-Ying Tasi , and Ching-Lin Chang United Microelectronics Corporation, Tainan, Taiwan, ROC

xiii Effectiveness of Nanoprober in Detecting Single/Multiple Bit Flash Data Gain & Data Loss Failures ...... 234 Rajesh Medikonduri Texas Instruments Incorporated, Stafford, TX, USA

The Method for Retaining an Intermittent Electrical Failure Signature during the Interconnect Immobilization Process throughout Failure Analysis ...... 242 Julie Schuchman and Julie Willis Intel Corporation, Hillsboro, OR, USA

Effectiveness of Non Destructive Physical Analysis Method Using X-ray CT Imaging ...... 247 Akira Mizoguchi and Koichiro Takeuchi Mitsubishi Electric Corporation, Kanagawa, Japan

Production Yield Enhancement through Failure Analysis Investigation ...... 254 Rajesh Medikonduri Texas Instruments Incorporated, Stafford, TX, USA

Fail Mechanisms Causing Single Bit Flash Data Gain in Flash Memory ...... 261 Rajesh Medikonduri Texas Instruments Incorporated, Stafford, TX, USA

Session 8: Photon Beam Based Techniques – 2

Picosecond Single-Photon and Femtosecond Two-Photon Pulsed Laser Stimulation for IC Characterization and Failure Analysis ...... 268 V. Pouget1, E. Faraud1, K. Shao1, S. Jonathas1, D. Horain2, G. Haller3, V. Goubier3, B. Picart4, L. Forli4, and D. Lewis1 (1) University of Bordeaux, Talence, France; (2) PULSCAN, Talence, France; (3) STMicroelectronics, Rousset, France; (4) ATMEL, Rousset, France

OBIC Measurements without Lasers or Raster-Scanning Based on Compressive Sensing ...... 272 Ting Sun, Gary L. Woods, Marco F. Duarte, Kevin Kelly, Chengbo Li, and Yin Zhang Rice University, Houston, TX, USA

Development of Laser-Based Variation Mapping Techniques – Another Way to Increase the Successful Analysis Rate on Analog & Mixed-Mode ICs ...... 278 Magdalena Sienkiewicz1,2, Kevin Sanchez1, Luigi Cattaneo1, Philippe Perdu1, Abdellatif Firiti2, Olivier Crepel2, and Dean Lewis3 (1) CNES – French Space Agency, Toulouse, France; (2) Freescale Semiconductor, Toulouse, France; (3) Université de Bordeaux, Talence, France

xiv UV Emission Microscopy Development for High Band Gap Components ...... 283 M. Bouya1,2, D. Carisetti1, J.C. Clement1, N. Malbert2, N. Labat2, and P. Perdu3 (1) Thales Research and Technology, Palaiseau, France; (2) University of Bordeaux, Talence, France; (3) CNES Laboratory, Toulouse, France

Session 9: Package and Assembly Level FA

Studies on a Qualification Method (OSAT) of Microchip Al Bondpads in ...... 289 Hua Younan, Nistala Ramesh Rao, Ng Adrian, and Tsai Tony Chartered Semiconductor Manufacturing Ltd., Singapore

Degradation Analysis of Thick Film Chip Resistors ...... 293 Bhanu Sood, Diganta Das, Michael H. Azarian and Michael Pecht University of Maryland, College Park, MD, USA

Conductive Filament Formation in Printed Circuit Boards – Effects of Reflow Conditions and Flame Retardants ...... 301 Bhanu Sood and Michael Pecht University of Maryland, College Park, MD, USA

Fracture Mechanisms for Silicon Dice ...... 309 Roberto Dugnani and Ming Wu Exponent Failure Analysis Associates, Menlo Park, CA, USA

Ultimate Resolution for Current Localization by Means of Magnetic Techniques ...... 314 Fulvio Infante1, Mathieu Gabarrot1, Philippe Perdu1, and Dean Lewis2 (1) CNES, Toulouse, France; (2) IMS Laboratory, Talence, France

Session 10: Failure Analysis Process

Failure Analysis of Stacked-Die Devices by Combining Non-Destructive Localization and Target Preparation Methods ...... 319 Christian Schmidt1, Michél Simon1, Frank Altmann1, and Antoine Nowodzinski2 (1) Fraunhofer Institute for Mechanics of Materials, Halle, Germany; (2) CEA-LETI Minatec, Grenoble, France

Challenges Facing the Detection of Leakage Current in (IC) Devices ...... 324 S.L. Toh, E. Hendarto, J. Sudijono, P.K. Tan, Y.W. Goh, H.B. Lin, Q. Deng, H. Tan, L. Zhu, Q.F. Wang, H.L. Li, R. He, J. Lam, and Z.H. Mai Chartered Semiconductor Manufacturing Ltd., Singapore

xv Analysis of a Media Processor Functional Failure ...... 329 Alan Putman Intel Corporation, Chandler, AZ, USA

Session 11: Advanced Metrology and System Level FA

Start up of a Dual Beam FIB for Automatic STEM Sample Preparation ...... 334 James J. Demarest1 and Zubin DeSouza2 (1) IBM, Albany, NY, USA; (2) FEI, Hillsboro, OR, USA

The Helium Ion Microscope for High Resolution Imaging, Materials Analysis, Circuit Edit and FA Applications ...... 339 William B. Thompson1, John Notte1, Larry Scipioni1, Mohan Ananth1, Lewis Stern1, Colin Sanford1, and Shinichi Ogawa2 (1) Carl Zeiss SMT, Peabody, MA, USA; (2) Semiconductor Leading Edge Technologies, Inc., Tsukuba, Japan

Damage Induced Field Failures of Electrical Contacts ...... 346 Aravind Munukutla, Randy Rahn, and J.S. Lewis Intel Corporation, Hillsboro, OR, USA

Author Index ...... 353

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