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Terahertz Emitter Using Resonant-Tunneling Diode and Applications

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Terahertz Emitter Using Resonant-Tunneling Diode and Applications sensors Review Terahertz Emitter Using Resonant-Tunneling Diode and Applications Masahiro Asada 1,* and Safumi Suzuki 2 1 Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan 2 Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan; [email protected] * Correspondence: [email protected] Abstract: A compact source is important for various applications utilizing terahertz (THz) waves. In this paper, the recent progress in resonant-tunneling diode (RTD) THz oscillators, which are compact semiconductor THz sources, is reviewed, including principles and characteristics of oscillation, studies addressing high-frequency and high output power, a structure which can easily be fabricated, frequency tuning, spectral narrowing, different polarizations, and select applications. At present, fundamental oscillation up to 1.98 THz and output power of 0.7 mW at 1 THz by a large-scale array have been reported. For high-frequency and high output power, structures integrated with cylindrical and rectangular cavities have been proposed. Using oscillators integrated with varactor diodes and their arrays, wide electrical tuning of 400–900 GHz has been demonstrated. For spectral narrowing, a line width as narrow as 1 Hz has been obtained, through use of a phase-locked loop system with a frequency-tunable oscillator. Basic research for various applications—including imaging, spectroscopy, high-capacity wireless communication, and radar systems—of RTD oscillators has been carried out. Some recent results relating to these applications are discussed. Citation: Asada, M.; Suzuki, S. Keywords: terahertz oscillator; resonant-tunneling diode; frequency tuning; spectral narrowing; Terahertz Emitter Using polarizations; spectroscopy; wireless communication; radar Resonant-Tunneling Diode and Applications. Sensors 2021, 21, 1384. https://doi.org/10.3390/s21041384 1. Introduction Academic Editors: Viktor Krozer and The terahertz (THz) band, which has a frequency of about 0.1 to several THz, is ex- Richard Klemm pected to play key roles in various applications, such as imaging, chemical and biotechno- logical analyses, and communications [1–3]. Compact solid-state THz sources are important Received: 1 December 2020 devices for these applications and various kinds of such sources have been studied, com- Accepted: 13 February 2021 Published: 16 February 2021 prising both optical and electronic devices, as the THz band is located between millimeter and light waves. Publisher’s Note: MDPI stays neutral Figure1 shows the current status of the various semiconductor THz sources that with regard to jurisdictional claims in directly generate THz waves from a dc power supply—note that sources that require other published maps and institutional affil- external microwave or light sources to generate THz waves (e.g., by multiplication or dif- iations. ference frequency) are not included in the figure. On the optical device side, p-germanium (p-Ge) lasers [4] and quantum cascade lasers (QCLs) have been studied [5–9]. Recently, room-temperature THz sources with difference frequency generation (DFG) using mid- infrared QCLs have been reported [10–13]. These devices are included in Figure1, as all the light sources needed for these devices are integrated into one chip and the THz waves are Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. generated by DC power supplied to the chip without external sources of other frequencies. This article is an open access article On the electronic device side, impact ionization avalanche transit-time (IMPATT) diodes, distributed under the terms and tunneling transit-time (TUNNETT) diodes, Gunn diodes [14–16], and transistors such as conditions of the Creative Commons heterojunction bipolar transistors (HBTs), high electron mobility transistors (HEMTs), and Attribution (CC BY) license (https:// complementary metal-oxide-semiconductor (CMOS) transistors [17–21] have been studied creativecommons.org/licenses/by/ as THz sources. Recently, the operating frequencies of transistors have increased remark- 4.0/). ably. Other than semiconductors, THz emitters using intrinsic Josephson junctions in the Sensors 2021, 21, 1384. https://doi.org/10.3390/s21041384 https://www.mdpi.com/journal/sensors Sensors 2021, 21, x FOR PEER REVIEW 2 of 19 junctions in the layered high-temperature superconductor BiSrCaCuO have also been studied [22, 23], which have the advantage of having a wide frequency tuning range. Resonant-tunneling diodes (RTDs) are also promising candidates for room-tempera- ture THz sources [24–31]. Currently, oscillation up to 1.98 THz has been obtained at room temperature [32, 33], while structures for higher frequency and high output power are being studied [34, 35]. Studies aiming toward several applications, such as imaging, spec- Sensors 2021, 21, 1384 troscopy, wireless communications, and radars, have recently begun [36–47]. In this2 of pa- 19 per, we review recent developments and applications of THz sources using RTD oscilla- tors. Although RTDs can also be used as THz detectors [48–51], here, we only describe layeredRTD TH high-temperaturez sources, except superconductorfor a brief introduction Bi2Sr2CaCu of the2O application8+δ have also of been RTD studied THz detectors [22,23], whichfor wireless have thecommunications. advantage of having a wide frequency tuning range. Figure 1. Current status ofof semiconductorsemiconductor on-chipon-chip terahertzterahertz (THz)(THz)sources. sources.Output Outputpower power as as a a func- tionfunction of generated of generated frequency. frequency. Devices Devices without without temperature temperature indication indication operate operate at room at room temperature. temper- ature. Resonant-tunneling diodes (RTDs) are also promising candidates for room-temperature THz2. Structure, sources [Oscillation24–31]. Currently, Principle, oscillation and Oscillation up to 1.98 Characteristics THz has been obtained of RTD Oscillators at room tem- peratureAn RTD [32,33 is], made while of structures heterostructures for higher with frequency ultrathin and semiconductor high output multi power-layers. are being The studied [34,35]. Studies aiming toward several applications, such as imaging, spectroscopy, layer structure we use for a THz source is shown in Figure 2a. The main part is composed wireless communications, and radars, have recently begun [36–47]. In this paper, we review of an InGaAs quantum well and AlAs double barriers. An InGaAlAs emitter, an InGaAs recent developments and applications of THz sources using RTD oscillators. Although RTDs collector spacer, and a high-doped InGaAs collector are constructed around the main part. can also be used as THz detectors [48–51], here, we only describe RTD THz sources, except for These structures are epitaxially grown on a semi-insulating (SI) InP substrate. In DC op- a brief introduction of the application of RTD THz detectors for wireless communications. erations, the conduction band edge of the emitter is lifted by bias voltage, as shown in 2.Figure Structure, 2b. At Oscillationthe bias voltage Principle, where and the Oscillationconduction Characteristicsband edge of the of emitter RTD Oscillators is aligned to or exceeds the resonance level of the quantum well, the current–voltage (I–V) curve indi- An RTD is made of heterostructures with ultrathin semiconductor multi-layers. The cates the negative differential conductance (NDC) region, in which the current decreases layer structure we use for a THz source is shown in Figure2a. The main part is composed with increasing bias voltage. This region is used for the THz oscillation. In our RTD struc- of an InGaAs quantum well and AlAs double barriers. An InGaAlAs emitter, an InGaAs ture, a deep quantum well with indium-rich InGaAs and an emitter with InAlGaAs, hav- collector spacer, and a high-doped InGaAs collector are constructed around the main ing a high conduction band edge, are used to reduce the bias voltage required for NDC. part. These structures are epitaxially grown on a semi-insulating (SI) InP substrate. In DC operations,Figure 2c shows the conduction an example band of the edge measured of the emitterI–V curves is lifted at various by bias temperatures voltage, as shown [52]. The in FigureNDC region2b. At thecan biasbe seen voltage to have where unstable the conduction current fluctuation band edge of. This the emitterfluctuation is aligned occurs to due or exceedsto parasitic the resonanceoscillations level in ofthe the measurement quantum well, circuits, the current–voltage composed of (I–V) leading curve wires indicates and thepower negative supply. differential The wires conductance and power supply (NDC) construct region, in a which resonance the current circuit decreasesfor oscillati withon, increasingwhich is described bias voltage. later. This Relaxation region isoscillation used for the[53] THzand current oscillation. bi-stability In our RTD which structure, is caused a deepby charge quantum buildup well and with depletion indium-rich in the InGaAs quantum and well an emitter [54,55] with may InAlGaAs, also occur havingin this circuit. a high conduction band edge, are used to reduce the bias voltage required for NDC. Figure2c shows an example of the measured I–V curves at various temperatures [52]. The NDC region can be seen to have unstable current fluctuation. This fluctuation occurs due to parasitic oscillations in the measurement circuits, composed of leading wires
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