UNIVERSITY of CALIFORNIA, IRVINE Quantum Dot Heterojunction Solar Cells: the Mechanism
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Quantum Dot Sensitized Solar Cell: Photoanodes, Counter Electrodes, and Electrolytes
molecules Review Quantum Dot Sensitized Solar Cell: Photoanodes, Counter Electrodes, and Electrolytes Nguyen Thi Kim Chung 1, Phat Tan Nguyen 2 , Ha Thanh Tung 3,* and Dang Huu Phuc 4,5,* 1 Thu Dau Mot University, Number 6, Tran Van on Street, Phu Hoa Ward, Thu Dau Mot 55000, Vietnam; [email protected] 2 Department of Physics, Ho Chi Minh City University of Education, Ho Chi Minh City 70250, Vietnam; [email protected] 3 Faculty of Physics, Dong Thap University, Cao Lanh City 870000, Vietnam 4 Laboratory of Applied Physics, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City 70880, Vietnam 5 Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City 70880, Vietnam * Correspondence: [email protected] (H.T.T.); [email protected] (D.H.P.) Abstract: In this study, we provide the reader with an overview of quantum dot application in solar cells to replace dye molecules, where the quantum dots play a key role in photon absorption and excited charge generation in the device. The brief shows the types of quantum dot sensitized solar cells and presents the obtained results of them for each type of cell, and provides the advantages and disadvantages. Lastly, methods are proposed to improve the efficiency performance in the next researching. Keywords: optical; electrical; photovoltaic; photoanodes; counter electrodes; electrolytes Citation: Chung, N.T.K.; Nguyen, P.T.; Tung, H.T.; Phuc, D.H. Quantum Dot Sensitized Solar Cell: Photoanodes, Counter Electrodes, 1. Introduction and Electrolytes. Molecules 2021, 26, Solar cells have grown very rapidly over the past few decades, which are divided into 2638. -
Federico Capasso “Physics by Design: Engineering Our Way out of the Thz Gap” Peter H
6 IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, VOL. 3, NO. 1, JANUARY 2013 Terahertz Pioneer: Federico Capasso “Physics by Design: Engineering Our Way Out of the THz Gap” Peter H. Siegel, Fellow, IEEE EDERICO CAPASSO1credits his father, an economist F and business man, for nourishing his early interest in science, and his mother for making sure he stuck it out, despite some tough moments. However, he confesses his real attraction to science came from a well read children’s book—Our Friend the Atom [1], which he received at the age of 7, and recalls fondly to this day. I read it myself, but it did not do me nearly as much good as it seems to have done for Federico! Capasso grew up in Rome, Italy, and appropriately studied Latin and Greek in his pre-university days. He recalls that his father wisely insisted that he and his sister become fluent in English at an early age, noting that this would be a more im- portant opportunity builder in later years. In the 1950s and early 1960s, Capasso remembers that for his family of friends at least, physics was the king of sciences in Italy. There was a strong push into nuclear energy, and Italy had a revered first son in En- rico Fermi. When Capasso enrolled at University of Rome in FREDERICO CAPASSO 1969, it was with the intent of becoming a nuclear physicist. The first two years were extremely difficult. University of exams, lack of grade inflation and rigorous course load, had Rome had very high standards—there were at least three faculty Capasso rethinking his career choice after two years. -
Conference Programme
20 - 24 JUNE 2016 Ɣ MUNICH, GERMANY EU PVSEC 2016 ICM - International Congress Center Munich 32nd European PV Solar Energy Conference and Exhibition CONFERENCE PROGRAMME Status 18 March 2016 Monday, 20 June 2016 Monday, 20 June 2016 CONFERENCE PROGRAMME ORAL PRESENTATIONS 1AO.1 13:30 - 15:00 Fundamental Characterisation, Theoretical and Modelling Studies Please note, that this Programme may be subject to alteration and the organisers reserve the right to do so without giving prior notice. The current version of the Programme is available at www.photovoltaic-conference.com. Chairpersons: N.J. Ekins-Daukes (i) (i) = invited Imperial College London, United Kingdom W. Warta (i) Fraunhofer ISE, Germany Monday, 20 June 2016 1AO.1.1 Fast Qualification Method for Thin Film Absorber Materials L.W. Veldhuizen, Y. Kuang, D. Koushik & R.E.I. Schropp PLENARY SESSION 1AP.1 Eindhoven University of Technology, Netherlands G. Adhyaksa & E. Garnett 09:00 - 10:00 New Materials and Concepts for Solar Cells and Modules FOM Institute AMOLF, Amsterdam, Netherlands 1AO.1.2 Transient I-V Measurement Set-Up of Photovoltaic Laser Power Converters under Chairpersons: Monochromatic Irradiance A.W. Bett (i) S.K. Reichmuth, D. Vahle, M. de Boer, M. Mundus, G. Siefer, A.W. Bett & H. Helmers Fraunhofer ISE, Germany Fraunhofer ISE, Freiburg, Germany M. Rusu (i) C.E. Garza HZB, Germany Nanoscribe, Eggenstein-Leopoldshafen, Germany 1AP.1.1 Keynote Presentation: 37% Efficient One-Sun Minimodule and over 40% Efficient 1AO.1.3 Imaging of Terahertz Emission from Individual Subcells in Multi-Junction Solar Cells Concentrator Submodules S. Hamauchi, Y. Sakai, T. Umegaki, I. -
DESIGN and FABRICATION of Gan-BASED HETEROJUNCTION BIPOLAR TRANSISTORS
DESIGN AND FABRICATION OF GaN-BASED HETEROJUNCTION BIPOLAR TRANSISTORS By KYU-PIL LEE A DISSERTATION PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY UNIVERSITY OF FLORIDA 2003 In his heart a man plans his course, But, the LORD determines his steps. Proverbs 16:9 ACKNOWLEDGMENTS First and foremost, I would like to express great appreciation with all my heart to Professor Pearton and Professor Ren for their expert advice, guidance, and instruction throughout the research. I also give special thanks to members of my committee (Professor Abernathy, Professor Norton, and Professor Singh) for their professional input and support. Additional special thanks are reserved for the people of our research group (Kwang-hyun, Kelly, Ben, Jihyun, and Risarbh) for their assistance, care, and friendship. I am very grateful to past group members (Sirichai, Pil-yeon, David, Donald and Bee). 1 also give my thanks to P. Mathis for her endless help and kindness; and to Mr. Santiago who is network assistant in the Chemical Engineering Department, because of his great help with my simulation. I also thank my discussion partners about material growth technologies, Dr. B. Gila, Dr. M. Overberg, Jerry and Dr. Kang-Nyung Lee. I would like to give my thanks to my friends (especially Kyung-hoon, Young-woo, Se-jin, Byeng-sung, Yong-wook, and Hyeng-jin). Even when they were very busy, they always helped my research work without hesitation. I cannot forget Samsung's vice president Dr. Jong-woo Park’s devoted help, and the steadfast support from Samsung Electronics. -
Development of III-V Quantum Well and Quantum Dot Solar Cells
International Journal of Engineering Research and Technology. ISSN 0974-3154 Volume 9, Number 1 (2016), pp. 29-44 © International Research Publication House http://www.irphouse.com Development of III-V Quantum Well and Quantum Dot Solar Cells Roger E. Welser and Ashok K. Sood Magnolia Optical Technologies, Inc. 52-B Cummings Park, Suite 314, Woburn, MA 01801 Jay S. Lewis DARPA/MTO, 675 North Randolph Street, Arlington, VA 22203 Nibir K. Dhar Night Vision & Electronics Sensors Directorate, 10221 Burbeck Road, Fort Belvoir, VA 22060 Priyalal Wijewarnasuriya Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 2078 Roy L. Peters AQD, US Department of Interior Sierra Vista, Arizona 85636 Abstract Nanostructured quantum well and quantum dot solar cells are being widely investigated as a means of extending infrared absorption and enhancing III-V photovoltaic device performance. In the near term, nanostructured solar cell device concepts can potentially be leveraged to improve the performance of multi-junction III-V solar cells for defense and commercial applications. In the long term, nanostructured solar cells provide a pathway to implement advanced photovoltaic device designs which can capture energy typically lost in traditional solar cells. Introduction Photovoltaic (PV) devices can provide a mobile source of electrical power for a wide variety of applications in both space and terrestrial environments. Many of these mobile and portable power applications can directly benefit from the development of higher efficiency solar cells. Efficient photovoltaic energy harvesting requires device structures capable of absorbing a wide spectrum of incident radiation and extracting 30 Roger E. Welser et al the photogenerated carriers at high voltages. -
Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
COMMUNICATION Heterojunction Bipolar Transistor www.advelectronicmat.de 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification Geonyeop Lee, Stephen J. Pearton, Fan Ren, and Jihyun Kim* been applied to various types of semicon- The heterojunction bipolar transistor (HBT) differs from the classical homo- ductor devices, such as lasers, solar cells, junction bipolar junction transistor in that each emitter-base-collector layer high electron mobility transistors, and het- [3–6] is composed of a different semiconductor material. 2D material (2DM)- erojunction bipolar transistors (HBTs). Notably, with a bipolar junction transistor, based heterojunctions have attracted attention because of their wide range which is a three-terminal transistor fabri- of fundamental physical and electrical properties. Moreover, strain-free cated by connecting two P–N homojunc- heterostructures formed by van der Waals interaction allows true bandgap tion diodes, there is a trade-off between engineering regardless of the lattice constant mismatch. These characteristics the current gain and high-frequency ability [3,7] make it possible to fabricate high-performance heterojunction devices such because of these problems. In sharp contrast, HBTs realized using the hetero- as HBTs, which have been difficult to implement in conventional epitaxy. structure can avoid these trade-offs and Herein, NPN double HBTs (DHBTs) are constructed from vertically stacked improve device performance.[8] HBTs, due 2DMs (n-MoS2/p-WSe2/n-MoS2) using dry transfer technique. The forma- to their high power efficiency, uniformity tion of the two P–N junctions, base-emitter, and base-collector junctions, of threshold voltage, and low 1/f noise in DHBTs, was experimentally observed. -
Quantum Dot and Electron Acceptor Nano-Heterojunction For
www.nature.com/scientificreports OPEN Quantum dot and electron acceptor nano‑heterojunction for photo‑induced capacitive charge‑transfer Onuralp Karatum1, Guncem Ozgun Eren2, Rustamzhon Melikov1, Asim Onal3, Cleva W. Ow‑Yang4,5, Mehmet Sahin6 & Sedat Nizamoglu1,2,3* Capacitive charge transfer at the electrode/electrolyte interface is a biocompatible mechanism for the stimulation of neurons. Although quantum dots showed their potential for photostimulation device architectures, dominant photoelectrochemical charge transfer combined with heavy‑metal content in such architectures hinders their safe use. In this study, we demonstrate heavy‑metal‑free quantum dot‑based nano‑heterojunction devices that generate capacitive photoresponse. For that, we formed a novel form of nano‑heterojunctions using type‑II InP/ZnO/ZnS core/shell/shell quantum dot as the donor and a fullerene derivative of PCBM as the electron acceptor. The reduced electron–hole wavefunction overlap of 0.52 due to type‑II band alignment of the quantum dot and the passivation of the trap states indicated by the high photoluminescence quantum yield of 70% led to the domination of photoinduced capacitive charge transfer at an optimum donor–acceptor ratio. This study paves the way toward safe and efcient nanoengineered quantum dot‑based next‑generation photostimulation devices. Neural interfaces that can supply electrical current to the cells and tissues play a central role in the understanding of the nervous system. Proper design and engineering of such biointerfaces enables the extracellular modulation of the neural activity, which leads to possible treatments of neurological diseases like retinal degeneration, hearing loss, diabetes, Parkinson and Alzheimer1–3. Light-activated interfaces provide a wireless and non-genetic way to modulate neurons with high spatiotemporal resolution, which make them a promising alternative to wired and surgically more invasive electrical stimulation electrodes4,5. -
Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells
Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 12-2013 Quantum Dot Enhanced Epitaxial Lift-Off olS ar Cells Mitchell F. Bennett Follow this and additional works at: http://scholarworks.rit.edu/theses Part of the Materials Chemistry Commons Recommended Citation Bennett, Mitchell F., "Quantum Dot Enhanced Epitaxial Lift-Off oS lar Cells" (2013). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by the Thesis/Dissertation Collections at RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells by Mitchell F. Bennett A Thesis Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science in Materials Science & Engineering Approved by: Dr. Seth M. Hubbard, Associate Professor Thesis Advisor, Department of Physics and Microsystems Engineering Dr. John Andersen, Professor Committee Member, Department of Physics Dr. Michael Jackson, Associate Professor Committee Member, Department of Electrical & Microelectronic Engineering Dr. Paul Craig, Professor Department Head, School of Chemistry and Materials Science & Engineering Department of Materials Science & Engineering College of Science Rochester Institute of Technology Rochester, New York December 2013 Thesis Release Permission Form Rochester Institute of Technology College Of Science Title: Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells I, Mitchell F. Bennett, hereby grant permission to the Wallace Memorial Library to repro- duce my thesis in whole or part. Mitchell F. Bennett Date iii Dedication To my family, especially all loved ones that are now gone. -
17 Band Diagrams of Heterostructures
Herbert Kroemer (1928) 17 Band diagrams of heterostructures 17.1 Band diagram lineups In a semiconductor heterostructure, two different semiconductors are brought into physical contact. In practice, different semiconductors are “brought into contact” by epitaxially growing one semiconductor on top of another semiconductor. To date, the fabrication of heterostructures by epitaxial growth is the cleanest and most reproducible method available. The properties of such heterostructures are of critical importance for many heterostructure devices including field- effect transistors, bipolar transistors, light-emitting diodes and lasers. Before discussing the lineups of conduction and valence bands at semiconductor interfaces in detail, we classify heterostructures according to the alignment of the bands of the two semiconductors. Three different alignments of the conduction and valence bands and of the forbidden gap are shown in Fig. 17.1. Figure 17.1(a) shows the most common alignment which will be referred to as the straddled alignment or “Type I” alignment. The most widely studied heterostructure, that is the GaAs / AlxGa1– xAs heterostructure, exhibits this straddled band alignment (see, for example, Casey and Panish, 1978; Sharma and Purohit, 1974; Milnes and Feucht, 1972). Figure 17.1(b) shows the staggered lineup. In this alignment, the steps in the valence and conduction band go in the same direction. The staggered band alignment occurs for a wide composition range in the GaxIn1–xAs / GaAsySb1–y material system (Chang and Esaki, 1980). The most extreme band alignment is the broken gap alignment shown in Fig. 17.1(c). This alignment occurs in the InAs / GaSb material system (Sakaki et al., 1977). -
Heterojunction Quantum Dot Solar Cells
Heterojunction Quantum Dot Solar Cells by Navid Mohammad Sadeghi Jahed A thesis presented to the University of Waterloo in fulfillment of the thesis requirement for the degree of Doctor of Philosophy in Electrical and Computer Engineering Waterloo, Ontario, Canada, 2016 © Navid Mohammad Sadeghi Jahed 2016 I hereby declare that I am the sole author of this thesis. This is a true copy of the thesis, including any required final revisions, as accepted by my examiners. I understand that my thesis may be made electronically available to the public. ii Abstract The advent of new materials and application of nanotechnology has opened an alternative avenue for fabrication of advanced solar cell devices. Before application of nanotechnology can become a reality in the photovoltaic industry, a number of advances must be accomplished in terms of reducing material and process cost. This thesis explores the development and fabrication of new materials and processes, and employs them in the fabrication of heterojunction quantum dot (QD) solar cells in a cost effective approach. In this research work, an air stable, highly conductive (ρ = 2.94 × 10-4 Ω.cm) and transparent (≥85% in visible range) aluminum doped zinc oxide (AZO) thin film was developed using radio frequency (RF) sputtering technique at low deposition temperature of 250 °C. The developed AZO film possesses one of the lowest reported resistivity AZO films using this technique. The effect of deposition parameters on electrical, optical and structural properties of the film was investigated. Wide band gap semiconductor zinc oxide (ZnO) films were also developed using the same technique to be used as photo electrode in the device structure. -
Band Alignment and Graded Heterostructures
Band Alignment and Graded Heterostructures Guofu Niu Auburn University Outline • Concept of electron affinity • Types of heterojunction band alignment • Band alignment in strained SiGe/Si • Cusps and Notches at heterojunction • Graded bandgap • Impact of doping on equilibrium band diagram in graded heterostructures Reference • My own SiGe book – more on npn SiGe HBT base grading • The proc. Of the IEEE review paper by Nobel physics winner Herb Kromer – part of this lecture material came from that paper • The book chapter of Prof. Schubert of RPI – book can be downloaded online from docstoc.com • http://edu.ioffe.ru/register/?doc=pti80en/alfer_e n.tex - by Alfreov, who shared the noble physics prize with Kroemer for heterostructure laser work 3 Band alignment • So far I have intentionally avoided the issue of band alignment at heterojunction interface • We have simply focused on – ni^2 change due to bandgap change for abrupt junction – Ec or Ev gradient produced by Ge grading • We have seen in our Sdevice simulation that the final band diagrams actually depend on doping – A Ec gradient favorable for electron transport is obtained for forward Ge grading in p-type (npn HBT) – A Ev gradient favorable for hole transport is obtained for forward Ge grading in n-type (pnp HBT) Electron Affinity – rough picture • Neglect interface between vacuum and semiconductor, vacuum level is drawn to be position independent • The energy needed to move an electron from Ec to vacuum level is called electron affinity. 5 Electron Affinity Model • The electron affinity model is the oldest model invoked to calculate the band offsets in semiconductor heterostructures (Anderson, 1962). -
Heterojunction Engineering for Next Generation Hybrid II-VI Materials
City University of New York (CUNY) CUNY Academic Works All Dissertations, Theses, and Capstone Projects Dissertations, Theses, and Capstone Projects 9-2017 Heterojunction Engineering for Next Generation Hybrid II-VI Materials Thor Garcia The Graduate Center, City University of New York How does access to this work benefit ou?y Let us know! More information about this work at: https://academicworks.cuny.edu/gc_etds/2385 Discover additional works at: https://academicworks.cuny.edu This work is made publicly available by the City University of New York (CUNY). Contact: [email protected] HETEROJUNCTION ENGINEERING FOR NEXT GENERATION HYBRID II-VI MATERIALS by THOR AXTMANN GARCIA A dissertation submitted to the Graduate Faculty in chemistry in partial fulfillment of the requirements for the degree of Doctor of Philosophy, The City University of New York 2017 © 2017 THOR AXTMANN GARCIA All Rights Reserved ii Heterojunction Engineering for Next Generation Hybrid II-VI Materials by Thor Axtmann Garcia This manuscript has been read and accepted for the Graduate Faculty in chemistry in satisfaction of the dissertation requirement for the degree of Doctor of Philosophy. Date Professor Maria C. Tamargo Chair of Examining Committee Date Professor Brian R. Gibney Executive Officer Supervisory Committee: Professor Aidong Shen Professor Igor L. Kuskovsky Professor Glen Kowach THE CITY UNIVERSITY OF NEW YORK iii ABSTRACT Heterojunction Engineering for Next Generation Hybrid II-VI Materials by Thor Axtmann Garcia Advisor: Professor Maria C. Tamargo Molecular Beam Epitaxy(MBE) is a versatile thin film growth technique with monolayer control of crystallization. The flexibility and precision afforded by the technique allows for unique control of interfaces and electronic structure of the films grown.