DOCSLIB.ORG

Clean and Low-Cost Synthesis of High Purity Beta-Silicon Carbide with Carbon fiber Production Residual and a Sandstone

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Clean and Low-Cost Synthesis of High Purity Beta-Silicon Carbide with Carbon fiber Production Residual and a Sandstone Journal of Cleaner Production 238 (2019) 117875 Contents lists available at ScienceDirect Journal of Cleaner Production journal homepage: www.elsevier.com/locate/jclepro Clean and low-cost synthesis of high purity beta-silicon carbide with carbon fiber production residual and a sandstone Kaidi Sun a, Tongtong Wang a, Zhe Chen b, Wenyang Lu a, Xin He a, Weibo Gong a, Mingchen Tang a, Fangjing Liu a, Zaixing Huang a, Jinke Tang d, TeYu Chien d, Gang Tan e, * Maohong Fan a, b, c, f, a Department of Chemical Engineering, University of Wyoming, Laramie, WY, 82071, USA b Department of Petroleum Engineering, University of Wyoming, Laramie, WY, 82071, USA c School of Energy Resources, University of Wyoming, Laramie, WY, 82071, USA d Department of Physics and Astronomy, University of Wyoming, Laramie, WY, 82071, USA e Department of Civil & Architectural Engineering, University of Wyoming, Laramie, WY, 82071, USA f School of Civil and Environmental Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA article info abstract Article history: The U.S. Department of Energy has initiated conversion of coal to solid materials, which can improve the Received 5 April 2019 coal-derived high-value product chain and decrease coal utilization related carbon dioxide emission. An Received in revised form integrated coal utilization technology was developed to respond to Department of Energy's call, which is 7 July 2019 extracting the molecules with desired molecular weight and structure in coal for carbon fiber production, Accepted 1 August 2019 then using carbon-rich residual from carbon fiber precursor extraction as carbon source to produce beta- Available online 1 August 2019 silicon carbide. For the first time beta-silicon carbide is synthesized from carbon fiber production re- Handling Editor: Baoshan Huang sidual and a sandstone. The synthesized beta-silicon carbide was characterized with multiple analytical techniques. The product exhibits good properties with its purity, density, and Vickers hardness reach the Keywords: requirements of commercial silicon carbide. Specifically, the purity of the beta-silicon carbide obtained Coal with the two inexpensive raw materials under argon atmosphere at 1600 C reaches as high as 98%. It is EtOH-SCC extraction residual the first time that the furnace-MS system was applied to analyze the gaseous products in coal-based Sandstone beta-silicon carbide synthesis process. Also, a possible synthesis mechanism was proposed and Silicon carbide confirmed with experimental results. The research further analyzed the environmental impact and proposed the possibility that the liquid wastes/byproducts generated during raw material treatment process can be recycled and efficiently reused as coagulants or desiccants when the developed beta- silicon carbide synthesis process is applied in industry. This study provides a clean and low-cost approach for reusing waste residual from coal-based carbon fiber production and sandstone powder. © 2019 Elsevier Ltd. All rights reserved. 1. Introduction and among them are carbon fiber (Yang et al., 2016) and carbide (Liu et al., 2015),. However, to the best knowledge of the authors, Coal has been used for generating electricity in power plants, integrally producing both carbon fiber and carbide with coal have which unfortunately may not be the best way to use the precious not been seen in literature. Therefore, according to the elemental natural resource (Chen et al., 2016), especially considering the fact composition characteristics of coalerich in C and poor in H, and that people are increasingly concerned about the coal combustion atom economy and energy saving principles, Fan's group proposed associated CO2 emission (Lai et al., 2018). Thus, people recently to produce both carbon fiber and carbide with high H:C and low started to pay high attention to converting coal to solid materials, H:C fractions in coal, respectively. Successful separation of the high H:C fraction from low H:C fraction in coal and preparation of carbon fiber with high H:C fraction were realized with ethanol and su- percritical CO2 (EtOH-SCC) (Liu et al., 2018) via extraction. This * Corresponding author. School of Civil and Environmental Engineering, Georgia research was focused on the utilization of the EtOH-SCC extraction Institute of Technology, Atlanta, GA, 30332, USA. E-mail address: [email protected] (M. Fan). residual and sandstone in b-SiC synthesis. https://doi.org/10.1016/j.jclepro.2019.117875 0959-6526/© 2019 Elsevier Ltd. All rights reserved. 2 K. Sun et al. / Journal of Cleaner Production 238 (2019) 117875 b-SiC (3CeSiC) with a zinc blende crystal structure is synthe- under Ar flow (50 ml/min) to synthesize b-SiC. A mass spectrom- sized at temperatures below 1700 C. It can be utilized in many eter (MS, HPR-20, HIDEN) was connected to the high-temperature areas, including catalysis, ceramic manufacturing, coating, milling, horizontal tube furnace (HTRH-Carbolite) to detect gaseous spe- and polishing (Chen et al., 2017). Also, b-SiC plays an important role cies generated during SiC synthesis process. During the reaction in manufacturing semiconductors, solar cells, and optoelectronics process, the gaseous products were identified and recorded by the due to its characteristics of the wide band gap, high electron molecular mass/mass number (m/z) signal of the MS. The obtained mobility, and superior thermal conductivity(Gusev et al., b-SiC products were treated at 850 C for 6 h under air atmosphere 2016),(Pang et al., 2010),(Kamble et al., 2017). to remove unreacted carbon. The schematic diagram of the exper- Currently, Acheson process (Chen et al., 2018) is the main b-SiC imental set-up for the synthesis of b-SiC is shown in Fig. 1. The flow synthesis method, which is started by mixing C-rich and Si-rich diagram of the experiment including all procedures is shown in materials in an electric resistance furnace and followed by heat- Fig. 2. ing the mixture at given temperatures for a desired period (Makkee et al., 1998). The employed coal related C-rich raw materials include 2.3. Characterization of residual, sandstone powder and b-SiC coal (Liu et al., 2015), coal tar pitch (Czosnek and Ratuszek, 2002), products and metallurgical coke (Narciso-Romero et al., 1999), while coal fl related Si-rich raw materials are coal y ash (Sulardjaka et al., 2.3.1. Chemical properties characterization of residual, sandstone fi 2011), coal gasi cation slag (Yin and Tang, 2011), and coal gangue powder and b-SiC products (Xiao et al., 2015). Other C-rich and Si-rich raw materials are acti- The elemental analysis of the residual was performed by using vated carbon and carbon black; and Si, SiO2, carbosilane and an elemental analyzer (vario MACRO cube, Elementar), and the methyltriethoxysilane, respectively. On one hand, the materials oxygen content was calculated by the subtraction method. An were successfully used for the synthesis of b-SiC. For example, the inductively coupled plasma mass spectrometry (ICP-MS, NexIon purity of b-SiC produced by coal gangue with carbon reached 350, PerkinElmer) was operated to determine the composition of 76.01% (Xiao et al., 2015). Also, b-SiC synthesized with silica fume treated sandstone powder and ash of treated residual. A nine-point e and brown coal semi-coke shows a purity of 90 91% (Anikin et al., calibration curve from 0 to 100 ng/L was created for each analysis. 2016). On the other hand, the C concentration in the C-rich mate- Residual was dried at 105 C overnight to remove moisture, then rials used in the conventional b-SiC is either too low or too high, calcined at 550 C for 6 h to obtain ash sample. For each test, 0.03 g which is not beneficial to b-SiC synthesis. Use of low C or high H:C sample was mixed with 0.24 g lithium metaborate (BLiO2) and raw materials such as coals only for b-SiC synthesis results in heated at 1100 C for 5 min in the air atmosphere. The obtained wasting a lot of valuable H, which is not desired for lowering the glass-like mixture was then fully dissolved by 5 wt% nitric acid overall cost of b-SiC. Employing high C materials with relatively low (HNO3). The dissolved solution was diluted with deionized water to activities such as activated carbon could lower b-SiC synthesis ki- obtain the testable sample for ICP-MS tests. The purity of the ob- netics, which should also be avoided for b-SiC synthesis. Thus, the tained b-SiC was determined with ICP-AES following the method of EtOH-SCC extraction residuals with reasonable H:C ratios were CAP-017P. used in this research to overcome the shortcomings of the state-of- the-art b-SiC synthesis technologies. 2.3.2. Qualitative characterization of residual, sandstone powder 2. Experiments and b-SiC products Powder X-ray diffraction (XRD) tests were performed on a 2.1. Residual and sandstone powder preparation Rigaku X-ray diffraction system using Cu Ka1 radiation (l ¼ 1.54056 Å) at 40Kv and 40 mA. The sample was placed on a The residual was obtained from EtOH-SCC extraction of Powder zero diffraction Si holder and was scanned from 10 to 90 (2q) with River Basin (PRB) coal as previously reported (Liu et al., 2018). a5 /min scanning rate at room temperature. The samples were also fi Liquid tar was used for high-value carbon fiber synthesis (Liu et al., identi ed by Fourier transform infrared spectrometer (FTIR, Nicolet À1 fl 2018). The solid residual needed to be treated prior to its use as a C iS FT-IR) with a resolution of 4 cm . A spectro uorometer (Fluo- fi resource for b-SiC synthesis for this research. The residual was rolog-3, Horiba Scienti c) was adopted to explore the photo- washed with ethanol to extract remained liquid tar and then dried luminescence (PL) of the synthesized b-SiC materials.
Load more

Recommended publications
  • Technical Specification
    S018 Emission: 1 24/03/2010 TECHNICAL Revision: 3 18/02/2014 EagleBurgmann BT S.p.A. SPECIFICATION Arcugnano (Vicenza) - Italy Page 1 of 9 Description: Seal selection and material recommendation by media INDEX 1. AIM AND APPLICATION FIELD ................................................................................................. 2 2. TABLE OF MATERIALS ............................................................................................................. 2 3. COMPATIBLY FLUID / SEAL MATERIALS ................................................................................ 3 REVISION TABLE DATE EMISSION EMISSION / CHECKED APPROVED 24/03/2010 Michele Fanton Alessandro Bedin SEE FOR REV. DATE DESCRIPTION / MODIFICATION STARTING DATE APPROVED EMISSION 1 29/03/2010 M. Fanton Updating of seal groups 29/03/2010 A. Bedin 2 31/08/2011 A. Maroso Updating of Butyl Benzoate and Butirrate 31/08/2011 A. Bedin 3 18/02/2014 G. Bisognin Updating of Company’s name 18/02/2014 A. Bedin S018 Emission: 1 24/03/2010 TECHNICAL Revision: 3 18/02/2014 EagleBurgmann BT S.p.A. SPECIFICATION Arcugnano (Vicenza) - Italy Page 2 of 9 Description: Seal selection and material recommendation by media 1. AIM AND APPLICATION FIELD The following table lists the more common fluids (media) and suitable seal materials respectively. In selecting the seal the operating limits and constructional information for the relevant design should be taken into account. For technical or other economic reasons, other type of mechanical seals with different materials from the ones
    [Show full text]
  • PROPERTIES of Silicon Carbide
    PROPERTIES OF Silicon Carbide Edited by GARY L HARRIS Materials Science Research Center of Excellence Howard university, Washington DC, USA Lr Published by: INSPEC, the Institution of Electrical Engineers, London, United Kingdom © 1995: INSPEC, the Institution of Electrical Engineers Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act, 1988, this publication may be reproduced, stored or transmitted, in any forms or by any means, only with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms of licences issued by the Copyright Licensing Agency. Inquiries concerning reproduction outside those terms should be sent to the publishers at the undermentioned address: Institution of Electrical Engineers Michael Faraday House, Six Hills Way, Stevenage, Herts. SG1 2AY, United Kingdom While the editor and the publishers believe that the information and guidance given in this work is correct, all parties must rely upon their own skill and judgment when making use of it. Neither the editor nor the publishers assume any liability to anyone for any loss or damage caused by any error or omission in the work, whether such error or omission is the result of negligence or any other cause. Any and all such liability is disclaimed. The moral right of the authors to be identified as authors of this work has been asserted by them in accordance with the Copyright, Designs and Patents Act 1988. British Library Cataloguing in Publication Data A CIP catalogue record for this book is available from the British Library ISBN 0 85296 870 1 Printed in England by Short Run Press Ltd., Exeter Introduction Semiconductor technology can be traced back to at least 150-200 years ago, when scientists and engineers living on the western shores of Lake Victoria produced carbon steel made from iron crystals rather than by 'the sintering of solid particles' [I].
    [Show full text]
  • Electrical and Thermal Properties of Nitrogen-Doped Sic Sintered Body
    508 J. Jpn. Soc. Powder Powder Metallurgy Vol. 65, No. 8 ©2018 Japan Society of Powder and Powder Metallurgy Paper Electrical and Thermal Properties of Nitrogen-Doped SiC Sintered Body Yukina TAKI, Mettaya KITIWAN, Hirokazu KATSUI and Takashi GOTO* Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan. Received December 9, 2017; Revised January 24, 2018; Accepted February 6, 2018 ABSTRACT In this study, the effect of nitrogen (N) doping and microstructural changes on the electrical and thermal properties of silicon carbide (SiC) were investigated. SiC powder was treated in a N2 atmosphere at 1673, 1973 and 2273 K for 3 h and subsequently sintered by spark plasma sintering (SPS) at 2373 K for 300 s in a vacuum or in a N2 atmosphere. The a-axis of the N2-treated SiC powders was almost constant, while the c-axis slightly decreased with an increase in the temperature of N2 treatment. The relative density of the SiC powder sintered body decreased from 72% to 60% with an increase in the temperature of N2 treatment. The increase in temperature of N2 treatment caused a decrease in the thermal and electrical conductivities of the SiC. Upon N2 treatment at 3 −1 1673 K and sintering in a N2 atmosphere, SiC exhibited a high electrical conductivity of 1.5 × 10 S m at 1123 K. SiC exhibited n-type conduction, and the highest Seebeck coefficient was −310 μV K−1 at 1073 K. KEY WORDS silicon carbide, nitrogen doping, electrical conductivity, thermal conductivity 1 Introduction doping of N onto a SiC sintered body has not been investigated.
    [Show full text]
  • Norton Usa Format Msds: Sic
    NORTON USA FORMAT MSDS: SICCOAT001 http://www.nortonautomotive.com/Data/AbrMSDS/MSDSInfoService/D... MATERIAL SAFETY DATA SHEET PART# 66261139377 DATE PRINTED: JUL 31, 2007 MSDS NO. SICCOAT001 OUTBOUND Silicon Carbide Coated Abrasives SECTION 1. CHEMICAL PRODUCT AND COMPANY INFORMATION PRODUCT NAME Silicon Carbide Coated Abrasives TRADE NAME Durite - CAP Codes: H4XX, A4XX, E4XX, G4XX, Q4XX, R4XX, S4XX, T4XX, U4 XX, W4XX MANUFACTURER(4) Saint-Gobain Abrasives, Inc. 1 New Bond St Worcester, MA. 01615 (800) 543-4335 REVISION DATE 1/24/2007 MSDS PRINT FORMAT NUSA SECTION 2. COMPOSITION/INFORMATION ON INGREDIENTS SUBSTANCE DESCRIPTION PERCENT CAS# -------------------------------------------------------------------------------- Cloth or Paper Backing 45.000- 55.000 N/A Silicon Carbide 15.000- 25.000 409-21-2 Cured PhenolFormaldehyde Resin 5.000- 27.000 9003-35-4 Animal Glue Bond 5.000- 27.000 N/A Cured Urea Formaldehyde Resin 5.000- 27.000 9011-05-6 OTHER Not Applicable SECTION 3. HAZARDS IDENTIFICATION INHALATION ACUTE EXPOSURE EFFECTS Dust may be slightly irritating to eyes and respiratory tract at high concentrations. INHALATION CHRONIC EXPOSURE EFFECTS Chronic: May affect breathing capacity. For products containing phenol/formaldehyde resin, dust generated from intended use may contain trace amounts of phenol and formaldehyde which under excessive exposure may cause skin sensitization and airway obstruction. For products containing inorganic fluorides: Excessive exposure to inorganic fluorides have been shown to increase bone density. EYE CONTACT ACUTE EXPOSURE EFFECTS 1 of 4 9/13/2008 2:42 PM NORTON USA FORMAT MSDS: SICCOAT001 http://www.nortonautomotive.com/Data/AbrMSDS/MSDSInfoService/D... Dust may irritate eyes. SKIN CONTACT ACUTE EXPOSURE EFFECTS Some may experience skin irritation from dust.
    [Show full text]
  • Intrinsic Structural and Electronic Properties of the Buffer Layer On
    www.nature.com/scientificreports OPEN Intrinsic structural and electronic properties of the Bufer Layer on Silicon Carbide unraveled by Received: 25 June 2018 Accepted: 15 August 2018 Density Functional Theory Published: xx xx xxxx Tommaso Cavallucci1,2 & Valentina Tozzini 1,2 The bufer carbon layer obtained in the frst instance by evaporation of Si from the Si-rich surfaces of silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene. In this work, we explore its intrinsic potentialities, addressing its structural and electronic properties by means of Density Functional Theory. While the system of corrugation crests organized in a honeycomb super-lattice of nano-metric side returned by calculations is compatible with atomic microscopy observations, our work reveals some possible alternative symmetries, which might coexist in the same sample. The electronic structure analysis reveals the presence of an electronic gap of ~0.7 eV. In-gap states are present, localized over the crests, while near-gap states reveal very diferent structure and space localization, being either bonding states or outward pointing p orbitals and unsaturated Si dangling bonds. On one hand, the presence of these interface states was correlated with the n-doping of the monolayer graphene subsequently grown on the bufer. On the other hand, the correlation between their chemical character and their space localization is likely to produce a diferential reactivity towards specifc functional groups with a spatial regular modulation at the nano- scale, opening perspectives for a fnely controlled chemical functionalization. Te thermal decomposition of silicon carbide (SiC) is a widely used technique to produce supported graphene1.
    [Show full text]
  • Electronic Structure of Cubic Silicon Carbide with Substitutional 3D Impurities at Si and C Sites N
    Semiconductors, Vol. 37, No. 11, 2003, pp. 1243–1246. Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 11, 2003, pp. 1281–1284. Original Russian Text Copyright © 2003 by Medvedeva, Yur’eva, IvanovskiÏ. ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites N. I. Medvedeva, E. I. Yur’eva, and A. L. IvanovskiÏ Institute of Solid State Chemistry, Ural Branch of Russian Academy of Sciences, Yekaterinburg, 620219 Russia e-mail: [email protected] Submitted January 20, 2003; accepted for publication January 25, 2003 Abstract—The full-potential linear muffin-tin orbital method is used to calculate the electronic structure and cohesive energies for cubic silicon carbide doped with transition 3d metal impurities (Me = Ti, V, Cr, Mn, Fe, Co, Ni), substituting Si or C at the corresponding sublattice of the atomic matrix. It is established that all 3d impurities mainly occupy silicon sites. For the Ti Si substitution, dopant impurity levels are located in the conduction band of SiC, whereas doping silicon carbide with other 3d impurities gives rise to additional donor or acceptor levels in the band gap. For 3C-SiC the effect of impurities on the lattice parameter (with the substitutions Me Si) and on the impurity local magnetic moments (with the substitutions Me Si, C) is studied. © 2003 MAIK “Nauka/Interperiodica”. Silicon carbide is a promising material for extremal culations of spin polarization by the full-potential aug- electronics. Using intentional doping with atoms of mented plane wave method (APW) showed that, for the 3d metals (Me), one can appreciably vary the electrical, states of an isolated Ti atom in 3C-SiC, the relaxation magnetic, and mechanical properties of SiC [1–6].
    [Show full text]
  • Silicon-Carbide (Sic) Nanocrystal Technology and Characterization and Its Applications in Memory Structures
    nanomaterials Article Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures Andrzej Mazurak 1 , Robert Mroczy ´nski 1,* , David Beke 2,3 and Adam Gali 2,3 1 Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland; [email protected] 2 Wigner Research Centre for Physics, POB. 49, H-1525 Budapest, Hungary; [email protected] (D.B.); [email protected] (A.G.) 3 Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary * Correspondence: [email protected]; Tel.: +48-22-234-6065 Received: 28 October 2020; Accepted: 27 November 2020; Published: 29 November 2020 Abstract: Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor and metal–insulator–metal structures based on hafnium oxide layers. The fabricated structures were characterized through the stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, switching characteristics, and retention time. The examined electrical performance of the sample structures has demonstrated the feasibility of the application of both types of structures based on SiC nanoparticles in memory devices. Keywords: silicon-carbide (SiC) nanocrystals; high-k dielectric; metal–insulator–semiconductor (MIS); metal–insulator–metal (MIM); electrical characterization 1. Introduction Due to the potential applications in the field of modern electronic and photonic devices, the investigations and feasibility studies of the structures with nanocrystals (NCs) embedded in dielectric ensembles are commonly noticeable [1]. The literature mostly reports the application of silicon (Si) nanocrystals in various semiconductor devices and structures, e.g., field-effect light-emitting devices (FELEDs) [2], photovoltaic cells [3], memory structures based on photoluminescence (PL) [4], or non-volatile semiconductor memory (NVSM) devices [5,6].
    [Show full text]
  • Effect on Mechanical Properties of Epoxy Hybrid Composites Modified with Titanium Oxide (Tio2) and Silicon Carbide (Sic) Suresh .J.S1, Dr
    ISSN XXXX XXXX © 2017 IJESC Research Article Volume 7 Issue No.10 Effect on Mechanical Properties of Epoxy Hybrid Composites Modified with Titanium Oxide (TiO2) and Silicon Carbide (SiC) Suresh .J.S1, Dr. M. Pramila Devi2, Dr. .M Sasidhar3 Professor& HOD1, Professor& Principal2, 3 Department of Mechanical Engineering Amrita Sai Institute of Science and Technology, Andhra Pradesh, India1, 3 A.U women’s Engineering College, Andhra Pradesh, India2 Abstract: Glass fibre reinforced polymer composites play an incredible role in almost all spheres day to day life and the field of glass composites is one of the prime research areas in recent decade. Polymers are mostly reinforced with fibre or fillers to obtain better mechanical properties. In this paper, the effect of filler material like titanium oxide (TiO2) and silicon carbide (SiC) particulates on mechanical properties of E-Glass fibre reinforced polymer has been studied out by varying filler materials. The effect of titanium oxide and silicon carbide fillers in modifying the mechanical properties of glass reinforced epoxy composites has been studied. It is found that the mechanical properties like Tensile strength, Flexural strength, Impact strength and Hardness of the glass reinforced composites are modified with the incorporation of the fillers. Keywords: Epoxy, Mechanical Properties, Titanium oxide (TiO2) and Silicon carbide (SiC) 1. INTRODUCTION mechanical properties of the proposed polymer composite which is a combination of two distinct materials- HDPE and palm Over the past decades, many Glass-fiber reinforced composite kernel nut shell particulate. The materials compounding and materials are used in manufacturing of various parts in sample formation was done using Reliable Two Roll Mill Model automotive and aerospace industries.
    [Show full text]
  • Chemical Resistance Chart
    T ENGINEERING - Chemical Data TM CHEMICAL RESISTANCE CHART Notice: The Chemical Resistance Chart factors, which can cause chemical ratings given on the following pages is intended to change within a given application. as a general guide for rating the resistance Such factors include variations in of typical engineering materials to temperature, pressure and concentration, common industrial chemicals. It is not chemical combinations, impurities or filler intended as a guarantee of material materials, aeration, agitation and exposure performance. The ratings in the chart are time. It is recommended that pumps and based on data obtained from technical materials first be tested under simulated publications, material manufacturers and field service conditions. Never test or laboratory tests. The information given in operate a pump before acceptable the chart should be used as a first chemical ratings have been obtained approximation for material selection, and the proper safety precautions have rather than the final answer. This is because been taken. chemical effects are dependent on many Interpretation of Chemical Resistance Ratings Rating Meaning Corrosion Rate (CR) Units Excellent CR < 0.002 in/yr A – Virtually no effect; very low corrosion rate. CR < 0.05 mm/yr 0.002 < CR < 0.02 in/yr B Good – Minor effect; low corrosion rate or slight discoloration observed. 0.05 < CR < 0.5 mm/yr Fair – Moderate effect; moderate to high 0.02 < CR < 0.05 in/yr C corrosion rate. Softening, weakening or swelling may occur. 0.5 < CR < 1.3 mm/yr Not recommended for continuous use. Severe Effect – Immediate attack, explosive CR > 0.05 in/yr D or very high corrosion rate.
    [Show full text]
  • Technical Support Document for the Silicon Carbide Production Sector: Proposed Rule for Mandatory Reporting of Greenhouse Gases
    Technical Support Document for the Silicon Carbide Production Sector: Proposed Rule for Mandatory Reporting of Greenhouse Gases Office of Air and Radiation U.S. Environmental Protection Agency January 22, 2009 Technical Support Document for Silicon Carbide: Proposed Rule for Mandatory Reporting of Greenhouse Gases CONTENTS 1. Industry Description........................................................................................................2 2. Total Emissions...............................................................................................................2 2.1 Process Emissions................................................................................................2 2.2 Stationary Combustion.........................................................................................2 3. Review of Existing Programs and Methodologies............................................................3 4. Options for Reporting Threshold.....................................................................................3 4.1 Emissions Thresholds..........................................................................................3 4.2 Capacity Thresholds............................................................................................5 4.3 No Emissions Threshold......................................................................................5 5. Options for Monitoring Methods.....................................................................................6 5.1 Option 1: Simplified Emission Calculation..........................................................6
    [Show full text]
  • Carbon Monoxide Silicate Reduction System (COSRS)
    Carbon Monoxide Silicate Reduction System (COSRS) Mark Berggren Dr. Robert Zubrin Dr. Stacy Carrera Heather Rose Scott Muscatello NASA SBIR Phase I Contract NNJ05JB90C Kristopher Lee, COTR Space Resources Roundtable VII: LEAG Conference on Lunar Exploration October 26, 2005 COSRS Description The Carbon Monoxide Silicate Reduction System (COSRS) is a carbothermal reduction technology for recovering large amounts of oxygen from lunar and Mars soils. COSRS uses carbon monoxide to produce the carbon needed for high oxygen yield from silicates. COSRS Background z Hydrogen reduction has been well demonstrated for lunar oxygen production (Allen et al.), but yield is limited primarily to oxygen in iron compounds. z Carbothermal reduction can recover large amounts of oxygen from lunar soils (Rosenberg et al.) z Carbothermal reduction reagent system is straightforward – carbon and its precursors plus soil. z Most unit operations have a demonstrated heritage of industrial application. Recoverable Oxygen in JSC-1 Lunar Simulant kg Compound Compound kg Oxygen Cumulative kg Carbon Cumulative Compound per 100 kg Molecular per 100 kg kg Oxygen per 100 kg kg Carbon Soil Weight Soil per 100 kg Soil per 100 kg Fe2O3 3.44 159.70 1.03 1.03 0.78 0.78 FeO 7.35 71.85 1.64 2.67 1.23 2.00 P2O3 0.66 110.00 0.29 2.96 0.22 2.22 Cr2O3 0.04 152.00 0.01 2.97 0.01 2.23 MnO 0.18 71.00 0.04 3.01 0.03 2.26 SiO2 47.71 60.00 25.45 28.46 19.08 21.34 TiO2 1.59 79.88 0.64 29.09 0.48 21.82 COSRS Process Description Lunar O2 H2 CO2 Soil CO Partial High RWGS Reduction/ Temperature Electrolyzer Reactor Carbon Carbothermal Deposition Solids Reduction Condenser/ Metallic and H2O Separator CO Oxide Residue z Lunar or Mars soils are sequentially subjected to: z iron oxide reduction by carbon monoxide, z in-situ deposition of carbon throughout the soil by carbon monoxide disproportionation catalyzed by metallic iron, and z high-temperature reduction of silicates by the deposited carbon.
    [Show full text]
  • Corrosion Resistance of Selected Ceramic Materials to Sulfuric Acid
    PLEASE 00 NOT REMOVE FRQ\1 LIBRARY I 9011 iRIi I Bureau of Mines Report of Investigations/1986 Corrosion Resistance of Selected Ceramic Materials to Sulfuric Acid By James P. Bennett UNITED STATES DEPARTMENT OF THE INTERIOR Report of Investigations 9011 Corrosion Resistance of Selected Ceramic Materials to Sulfuric Acid By James P. Bennett UNITED STATES DEPARTMENT OF THE INTERIOR Donald Paul Hodel, Secretary BUREAU OF MINES Robert C. Horton, Director Research at the Tuscaloosa Research Center is carried out under a memorandum of agreement between the University of Alabama and the Bureau of Mines. Library of Congress Cataloging in Publication Data: Bennett, James P (James Philip), 1951· Corrosion resistance of selected ceramic materials to sulfuric acid. (Bureau of Mines report of investigations; 9011) Bibliography: p. 11. Supt. of Docs. 110.: 128.23: 9011. 1. Ceramic materials-Corrosion. 2. Sulphuric acid. !. Title. II. Series: Report of investigations (United States. Bureau of Mines) ; 9011. TN23. U43 (TA430] 622s [620,1'404223] 85-600348 CONTENTS Abstract................ ....... .... ..•.... .. .. ...•... .. ...•.... ...•.... ........ 1 Introduction •....•....•.......•..•••........•......•.........•.......... 1-'" • •• 2 Test eq.uipment and sample description •••••••••••••••••••••••••• ,..... • •••• •••• • • 2 Results and discussion......................................................... 4 Acidproof materials.......................................................... 4 Acid-resistant materials................. ...... ... ..... .. ....
    [Show full text]