Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation Cite as: J. Appl. Phys. 127, 065306 (2020); https://doi.org/10.1063/1.5139400 Submitted: 19 November 2019 . Accepted: 25 January 2020 . Published Online: 11 February 2020 Rahul Kumar , Yurii Maidaniuk, Samir K. Saha, Yuriy I. Mazur , and Gregory J. Salamo ARTICLES YOU MAY BE INTERESTED IN Advanced Thermoelectrics Journal of Applied Physics 127, 060401 (2020); https://doi.org/10.1063/1.5144998 Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots Applied Physics Letters 116, 061103 (2020); https://doi.org/10.1063/1.5134808 Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix Journal of Applied Physics 124, 235303 (2018); https://doi.org/10.1063/1.5053412 J. Appl. Phys. 127, 065306 (2020); https://doi.org/10.1063/1.5139400 127, 065306 © 2020 Author(s). Journal of Applied Physics ARTICLE scitation.org/journal/jap Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation Cite as: J. Appl. Phys. 127, 065306 (2020); doi: 10.1063/1.5139400 Submitted: 19 November 2019 · Accepted: 25 January 2020 · View Online Export Citation CrossMark Published Online: 11 February 2020 Rahul Kumar,1,2,a) Yurii Maidaniuk,1 Samir K. Saha,1 Yuriy I. Mazur,1 and Gregory J. Salamo1,2 AFFILIATIONS 1Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA 2Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA a)Author to whom correspondence should be addressed:
[email protected] ABSTRACT InAs quantum dots (QDs) have been grown on a GaAs (001) substrate in the subcritical region of InAs coverage for transition from a 2-dimensional (2D) to a 3-dimensional growth mode.