nanomaterials Review Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes Dongxiang Luo 1, Lin Wang 2, Ying Qiu 3,*, Runda Huang 4 and Baiquan Liu 5,* 1 Institute of Semiconductors, South China Normal University, Guangzhou 510631, China;
[email protected] 2 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;
[email protected] 3 Guangdong R&D Center for Technological Economy, Guangzhou 510000, China 4 School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
[email protected] 5 State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China * Correspondence:
[email protected] (Y.Q.);
[email protected] (B.L.) Received: 26 May 2020; Accepted: 17 June 2020; Published: 24 June 2020 Abstract: In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced.