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VCO) for Frequency Shifting Or Synthesis in RF Front-End Circuitry

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VCO) for Frequency Shifting Or Synthesis in RF Front-End Circuitry A Low Power, Low Noise, 1.8GHz Voltage-Controlled Oscillator by Donald A. Hitko Bachelor of Science in Electrical Engineering GMI Engineering & Management Institute, 1994 Submitted to the Department of Electrical Engineering and Computer Science in partial fulfillment of the requirements for the degree of Master of Science in Electrical Engineering and Computer Science at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY February 1997 © 1997 Massachusetts Institute of Technology All rights reserved. A u th o r ......... ......................................................................................... Department of Electrical Engineering and Computer Science September 27, 1996 C ertified by ........... ............ ...................................................... Charles G. Sodini Professor of Electrical Engineering and Computer Science fl q Thesis Supervisor Accepted by ..................-----. - ............. Acceptedby F. R. Morgenthaler Chai n, Department \'minittee on Graduate Students • ~MAR 0 6 1997 UF•BARIES A Low Power, Low Noise, 1.8 GHz Voltage-Controlled Oscillator by Donald A. Hitko Submitted to the Department of Electrical Engineering and Computer Science on September 27, 1996, in partial fulfillment of the requirements for the degree of Master of Science in Electrical Engineering. Abstract Transceivers which form the core of many wireless communications products often require a low noise voltage-controlled oscillator (VCO) for frequency shifting or synthesis in RF front-end circuitry. Since many wireless applications are focused on portability, low power operation is a necessity. Techniques for implementing oscillators are explored and then evaluated for the purposes of simultaneously realizing low noise and low power operation. Models for the design of oscillators and the analysis of oscillation stability are covered, and methods of calculating phase noise are discussed. These models and theories all point to the need for a high quality, passive, integrated inductor to meet the system goals. Results from an experimental study of spiral and bond wire inductors built onto a silicon substrate are presented. The information gleaned from this study was used in selecting an inductor built from bond wires for use in a VCO for 1.8 GHz applications. Using characterization data, a model for the inductor was con- structed for circuit simulation purposes. The design of a differential VCO circuit in a silicon bipolar process is detailed, including transistor considerations, development of a low voltage topology, and noise matching to the oscillator gain stage. On-chip varactors are integrated as a vital component of a tun- able resonator, and a number of interface issues which impact the VCO design are intro- duced. Circuit simulation results which demonstrate the robustness of the oscillator are provided. Preliminary measurements on the fabricated VCO circuits gauge the oscillator noise spectral density to be -118dBc/Hz at a 1MHz offset, drawing just 5 mA from a sup- ply of only 1.8 V. Oscillation is supported with power consumption levels as small as 3.2mW from a 0.91 V supply, achieving -96dBc/Hz at the same carrier offset. Thesis Supervisor: Charles G. Sodini Title: Professor of Electrical Engineering Acknowledgments For my initial foray into RF/microwave circuit design, I've found the outcome of this effort to be most satisfying. It has not been a trail on which I embarked alone, and support has been plentiful along the way. Guidance has been supplied by Charlie Sodini who, in supervising this project, has pushed me to find answers, and not just solutions. He is deserving of a badge of valor for reading and re-reading this thesis, and for continually challenging my grasp of both device physics and the English language. Our industrial partner in this journey has proven to be invaluable, and numerous people in the fledgling Communications Division of Analog Devices, Inc. (ADI) in Wilmington, Massachusetts are owed a debt of gratitude. ADI performed the wafer fabri- cation and made available its RF laboratory and design expertise. A special note of thanks goes to Ted Tewksbury, who provided his time, technical assistance, and above all, made things happen. Additional gratitude is extended to the staff of the Microsystems Technology Laboratories for the fabrication of test wafers, and particularly to Matt Lukaszewski, for wire bonding many of my crazy concoctions. Appreciation is expressed to Delco Electronics Corporation, first in Flint, Michigan, and more recently the IC Design Center in Kokomo, Indiana. Their patience and willingness to work with me in new avenues (and venues!) of exploration are greatly valued. Being able to spend time with the people of the Microwave Circuits and Devices group-who seem imbued with a nearly limitless patience for me-within Hughes Research Laboratories in Malibu, California has been a major asset in my learning of this field. Certainly deserving of a mention are my colleagues in Sodini Group, who have helped me get things done, and perhaps most importantly, have shown me how the aca- demic world works. Finally, I should end where it all began. To my parents, whose unwavering sup- port throughout the years has been appreciated to a level that a mere acknowledgment can- not hope to do justice, I'd like to wish you both a very happy, forthcoming, 30th anniversary! Donald A. Hitko September 27, 1996 This project has been sponsored by DARPA contract DAAL-01-95-K-3526. Table of Contents I. Introduction 10 1.1 Recent Efforts in VCO Circuits............................................................................ 11 1.2 System Overview and Specifications....................................................................13 1.3 Scope of the Project.............................................................................................. 15 1.4 The Analog Devices RF25 (ADRF) Silicon Bipolar Process...............................17 1.5 Preliminary Measured Results .............................................................................. 18 1.6 Simulation and Design Tools................................................................................21 1.7 Preview of the T hesis............................................................................................21 II. Oscillator Theory 25 2.1 Oscillator Configurations and Considerations ...................................................... 25 2.1.1 R ing O scillators ........................................................................................... 25 2.1.2 Relaxation Oscillators..................................................................................26 2.1.3 Resonant Oscillators .................................................................................... 27 2.1.4 Tuning the Frequency of Oscillation ........................................................... 27 2.2 O scillation C riteria................................................................................................28 2.2.1 Negative Resistance Device Configurations...............................................30 2.2.2 Criteria for Oscillation ................................................................................. 32 2.3 Resonator Circuit Models ..................................................................................... 34 2.4 Oscillator Noise Theory ........................................................................................ 37 2.4.1 Oscillator Noise Matching ........................................................................... 39 2.4.2 Other Phase Noise Analysis Methods..........................................................40 III. Monolithic Inductors 43 3.1 System Considerations for the Inductors .............................................................. 43 3.2 Monolithic Inductor Test Wafer ........................................................................... 44 3.3 Monolithic Inductor Wafer Test Methodology.....................................................46 3.4 Inductor Characterization Results........................................................................47 3.4.1 Detailed Data on Bond Wire Inductors......................................................51 3.4.2 Lumped Element Model of S-parameter Data.............................................54 3.5 O ther Possibilities.................................................................................................56 IV. 1.8GHz (L-band) Monolithic VCO Design 58 4.1 System Considerations for the VCO..................................................................... 58 4.2 V C O Circuit D esign.............................................................................................. 60 4.2.1 Transistor Considerations ............................................................................ 61 4.2.2 Negative Resistance Element Topology ...................................................... 61 4.2.3 N oise M atching ............................................................................................ 65 4.2.4 Differential Oscillator Design......................................................................68 4.2.5 Tunable Resonator Design and VCO Interface Issues.................................75 4.2.6 The Differential Colpitts VCO Circuit ........................................................ 82 4.3 VCO Simulation Results.......................................................................................84 4.4 Frequency D rift.....................................................................................................92
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