Corrigendum: Optical Properties of Gan Nanowires Grown on Chemical Vapor Deposited-Graphene (2019 Nanotechnology 30 214005)

Nanotechnology

CORRIGENDUM Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

To cite this article: L Mancini et al 2020 Nanotechnology 31 459501

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Nanotechnology 31 (2020) 459501 (1p) https://doi.org/10.1088/1361-6528/abaade Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

L Mancini1, M Morassi1, C Sinito2, O Brandt2, L Geelhaar2, Hyun-Gyu Song3, Yong-Hoon Cho3, N Guan1, A Cavanna4, J Njeim5, A Madouri1, C Barbier1, L Largeau1, A Babichev6, F H Julien1, L Travers1, F Oehler1, N Gogneau1, J-C Harmand1 and M Tchernycheva1

1 Centre de Nanosciences et de Nanotechnologies (C2N) sites Orsay and Marcoussis, UMR9001 CNRS, University Paris Sud, University Paris Saclay, France 2 Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, Germany 3 Korea Advanced Institute of Science and Technology, Department of Physics 335 Gwahangno Yuseon-gu Daejeon, Republic of Korea 4 Laboratoire d’Electronique et Electromagnétisme, Sorbonne Université, Campus Pierre et Marie Curie, 4 place Jussieu, F-75252 Paris Cedex 05, France 5 GeePs Group of Electrical Engineering-Paris, UMR CNRS 8507, Sorbonne Université, Centrale Supelec, Univ. Paris-Sud, Université Paris Sacalay, 11 rue Joliot Curie, F-91192 Gif-Sur-Yvette, France 6 ITMO University, 197101 St. Petersburg, Russia

E-mail: [email protected]

Received 15 July 2020 Accepted for publication 30 July 2020 Published 18 August 2020

Keywords: GaN, nanowires, graphene

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On page 7 of the original article, it is stated: ‘Second, sur- References face stress (analogous to surface tension and the resulting Laplace pressure for liquids) can exert a strain and thus induce Calabrese G, van Treeck D, Kaganer V M , Konovalov O, Corfdir P, ´ a blueshift of the emission’. This statement was intended to be Sinito C, Geelhaar L, Brandt O and Fernandez-Garrido S 2020 Radius-dependent homogeneous strain in uncoalesced GaN supported by a reference to the original work discovering the nanowires Acta Mater. 195 87–97 effects of surface stress in GaN nanowires, but the citation was inadvertently omitted. The missing reference is:

ORCID iDs

O Brandt  https://orcid.org/0000-0002-9503-5729 M Tchernycheva  https://orcid.org/0000-0003-4144-0793