Jordan University of Science and Technology s1
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OMAR QASAIMEH WORK ADDRESS Jordan University of Science and Technology, Department of Electrical Engineering P. O. Box 3030 Irbid 22110 Jordan Tel: 962-2-7201-000 ext 22580 Fax 962-2-7095-018 E-mail: [email protected]
EDUCATION: Ph.D. Electrical Engineering, 06/2000 The University of Michigan, Ann Arbor Thesis title: "Monolithically Integrated Low-Power Phototransceivers and Photoreceivers for Application in an Optoelectronic Eye" M. S. E. in Electrical Engineering, 05/1994 Jordan University of Science and Tech., Irbid, Jordan. B. S. E. in Electrical Engineering, 02/1992. Jordan University of Science and Tech., Irbid, Jordan. EXPERIENCE: Professor (2013-now) Jordan University of Science and Technology, Irbid, Jordan, Chairman of Electrical Engineering Department (9/2008-9/2009) Jordan University of Science and Technology, Irbid, Jordan. Associate Professor (2007-2013) Jordan University of Science and Technology, Irbid, Jordan, Assistant Professor (2002-2007) Jordan University of Science and Technology, Irbid, Jordan,
Member of the following committee ABET committee Laboratory committee Curriculum committee
Research conducted: see list of publications below.
Supervised several B. Sc. graduation design projects
Supervised graduate thesis work
Courses Taught for undergraduate levels: EE 220 Electronics I, EE316 Electric circuit laboratory, EE320 Electronics II, EE321 Electronics I for non-EE, EE322 Electronics laboratory, EE325 Electronics I for biomedical Eng., EE327 Electronics II for biomedical Eng, EE420 Digital Electronics, EE422 Digital electronics laboratory, EE522 Optoelectronics,
Courses Taught for graduate levels: EE722 Advance Electronic Circuits. EE725 Advanced optoelectronic devices EE743 High speed transistors EE790 Seminar in Electrical Engineering EE721 Quantum Electronics
Tunable laser designer Agere Systems (now LSI Corporation), Breinigsville, PA 07/2000-2002: Design and development of CW tunable DBR lasers. Improve performance of SOA-based tunable DBR laser in C and L bands. Improve yield (include channel/wavelength targeting) . Reduce non-uniformity and process/growth variation. Qualify KR, JD reactor for DBR laser production. Develop device design and process that meet requirements. Develop qualification plan for the laser package. Develop test strategies (chip, OSA and package). Design 1480nm tunable pump laser. Involved in designing sampled grating SGDBR tunable laser. Involved in development of Electroabsorption-based (EA-DBR) tunable laser.
Research Assistant 05/1996-06/2000 The University of Michigan, Ann Arbor: Design, fabrication, and characterization of a high performance optoelectronic devices and circuits realized with SiGe/Si technology. Investigation of quantum dot devices for high-speed modulation and wavelength switching applications. Realization of high-gain monolithically integrated low power phototransceiver using a vertical cavity surface emitting laser (or/and microcavity light emitting diode) and heterojunction bipolar transistors (or/and modulated barrier photodiode).
Teaching and Research Assistant 09/1994- 08/1995 Yarmouk University, Hijjawi college, Jordan,. Served as instructor for the following laboratories: electronic circuits, integrated circuits, logic design, and biomedical electronics. conduct research on high-speed devices such as MQW photodiodes, avalanche photodiodes, and heterojunction phototransistors.
Teaching and Research Assistant, 09/1992- 05/1994 Jordan University of Science and Technology, Jordan,. Served as instructor for the following laboratories: microwaves and antennas, integrated circuits, logic design, instrumentations & measurements, and control systems. Conduct theoretical study on light amplifying optical switch (LAOS) consisting of monolithically integrated laser diode (or LED) and heterojunction bipolar phototransistors.
EXPERTISE: Use of design and analysis software for semiconductor devices and circuits Computer programming, Fortran, Pascal, Matlab, etc. Semiconductor device analysis tool - Medici. Semiconductor process analysis tool - Suprem. Circuit analysis tools - Hspice, Libra. Circuit layout tool - Mentographics, L-Edit. Fabrication of semiconductor devices and circuits. Vacuum and plasma systems - evaporator, RIE, PECVD. Lithography systems - optical aligner, E-beam lithographer. Image acquisition system - scanning electron microscope. Microwave and optical characterization of semiconductor devices and circuits S-parameter measurement system - network analyzer. Optical characterization. Characterization of lasers and modulators including high-speed measurements. SCHOLARSHIPS AND HONORS Hisham Hijjawi Award for applied science in Information Technology & Communications 2011. Abdel-Hameed Shoman Award for Young Arab Researchers: Engineering Sciences 2005. Scholarship, Jordan University of Science and Technology, 1995-1998. Dean’s honor list: All the semesters of undergraduate study, 1987-1992. Bachelor of Engineering (1992) and Master of Engineering (1994) with Distinction; ranked First.
ACTIVITIES IEEE Member Reviewer of several articles for IEEE Journal of Quantum Electronics and IEEE Transaction on Electron Devices.
ARCHIVAL JOURNAL PUBLICATIONS:
1. O. Qasaimeh, “Effect of doping on the polarization characteristics of spin-injected quantum dot VCSEL," J. optical and Quantum Electron, published online Jan 2014.
2. O. Qasaimeh, “Broadband Gain-Clamped Linear Quantum Dash Optical Amplifiers," J. optical and Quantum Electron, Vol.45 , No.12, pp. 1277-1286, 2013.
3. O. Qasaimeh, “Wide wavelength conversion in P-type doped quantum dot semiconductor optical amplifiers” Optic Communications, Vol. 305, pp. 1-7, 2013.
4. O. Qasaimeh, “Efficiency of Four-Wave Mixing of Doped Closely Spaced Energy States Quantum Dash Semiconductor Optical Amplifiers” Journal of Optical Engineering, Vol. 50(9), pp 094203, Sep. 2011.
5. H. M. Al-Otum and O. Qasaimeh “A Novel Watermarking Technique Based on the Generalized Squared Interpoint Distance for Image Copyright Protection Applications”, Journal of Electronic Imaging, Vol 20, No. 3, pp 033014(1-13), 2011.
6. O. Qasaimeh, and H. M. Al-Otum “Cross-Gain Modulation in Closely Spaced Energy States Quantum Dash Semiconductor Optical Amplifiers” Optic Communications, Vol. 284, pp. 4635-4641, 2011. 7. O. Qasaimeh, “Small-Signal Parameters of Quantum Dash Lasers with Multiple Coupled Energy States” Journal of Optical Engineering, Vol. 49(11), pp 114202(1-7), Nov. 2010.
8. O. Qasaimeh, “Differential Gain of Closely Spaced Energy States in Quantum Dashes” IEEE J. Lightwave Technology, Vol. 28, No. 13, pp. 1906-1912, 2010.
9. O. Qasaimeh, “Vertical Coupling in Multiple Stacks Quantum Dot Semiconductor Optical Amplifiers” Journal of Physics D: Applied Science, Vol. 42, pp. 234001, 2009.
10. O. Qasaimeh and Hadeel Qasaimeh “Stability Analysis of Quantum Dash DBR Lasers” Journal of Optical Engineering, Vol. 48(12) , pp 124202(1-7), Dec. 2009.
11. O. Qasaimeh, “Low Current N-type Quantum Dash Semiconductor Optical Amplifiers”, IEEE Photonic Technology Letter, Vol. 21, No. 19, pp. 1390-1392, 2009.
12. O. Qasaimeh, “Ultra-Fast Gain Recovery and Compression Due to Auger-Assisted Relaxation in Quantum Dot Semiconductor Optical Amplifiers” IEEE J. Lightwave Technology, Vol. 27, No. 13, pp. 2530-2536, 2009.
13. O. Qasaimeh, “Effect of Doping on the Optical Characteristics of Quantum Dot Semiconductor Optical Amplifiers," IEEE J. Lightwave Technology, Vol. 27, No. 12, pp. 1978-1984, 2009.
14. O. Qasaimeh, “Dynamics of optical pulse amplification and saturation in multiple state quantum dot semiconductor optical amplifiers," J. optical and Quantum Electron, Vol. 41, No. 1, pp. 99-111, 2009.
15. O. Qasaimeh, “Analytical Model for Cross-Gain Modulation and Crosstalk in Quantum Well Semiconductor Optical Amplifiers," IEEE J. Lightwave Technology, Vol. 26, No. 4, pp. 449-456, 2008.
16. O. Qasaimeh, “Novel Closed-Form Model for Multiple-State Quantum Dot Semiconductor Optical Amplifiers," IEEE J. Quantum Electron Vol. 44, No.7 pp. 652-657, 2008.
17. Jehad Ababneh and Omar Qasaimeh, “Simple Model for Quantum Dot Semiconductor Optical Amplifiers Using Artificial Neural Networks,” IEEE Trans. Electron. Device. Vol. 53, No.7, pp.1543- 1551, July 2006.
18. O. Qasaimeh, “Characteristics of Wavelength Conversion of Short Optical Pulses in Quantum Dot Semiconductor Optical Amplifiers," Optical and Quantum Electron, Vol. 37, No.7, pp-661-673, 2005.
19. O. Qasaimeh, “Linewidth Enhancement Factor of Quantum Dot Lasers,". Optical and Quantum Electronics, Vol. 37, No. 5, pp 495-507, 2005. 20. O. Qasaimeh, “Ultrafast Dynamic Properties of Quantum Dot Semiconductor Optical Amplifiers Including Line Broadening and Carrier Heating," IEE proceedings: Optoelectronics, Vol. 151, No. 4. pp.205-210, 2004.
21. O. Qasaimeh, “Modulation Bandwidth of Inhomogeneously Broadened InAs/GaAs Quantum Dot Lasers," Optics Communication, Vol. 236, No.4-6, pp. 387-394, 2004.
22. O. Qasaimeh, “Theory of Four-Wave Mixing Wavelength Conversion in Quantum Dot Semiconductor Optical Amplifiers," IEEE Photon. Tech. Lett., Vol. 16, No. 4, pp. 993-995, 2004.
23. O. Qasaimeh and H. Khanfar “High-Speed Characteristics of Tunneling Injection and Excited-State Emitting InAs/GaAs Quantum Dot Lasers," IEE proceedings: Optoelectronics. Vol. 151, No. 3, pp. 143-149, 2004.
24. O. Qasaimeh, “Characteristics of Cross-gain Wavelength Conversion in Quantum Dot Semiconductor Optical Amplifiers," IEEE Photon. Tech. Lett. Vol. 16, No. 2, pp. 542-544, 2004.
25. O. Qasaimeh, “Effect of Inhomogeneous Line Broadening on Gain and Differential Gain of Quantum Dot Lasers," IEEE Trans. Electron. Device. Vol. 50, No. 7, pp. 1575-1581, 2003.
26. O. Qasaimeh, “An Analytical Model for Quantum Dot Semiconductor Optical Amplifiers," Optics Communication, Vol. 222, No. 1-6, pp. 277-287, 2003.
1. O. Qasaimeh, “Optical Gain and Saturation Characteristics of Quantum Dot Semiconductor Optical Amplifiers," IEEE J. Quantum Electron, Vol.39, No. 6, pp. 793-798, 2003.
2. P. Bhattacharya, W-D. Zhou, O. Qasaimeh and S. Pradhan,’’ Evolutionary design process ponders optoelectronic eye,’’ Laser Focus World, Vol. 38, no. 5, May 2002, p.125-130.
3. O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, " Monolithically integrated low- power phototransceiver for optoelectronic parallel sensing and processing applications," IEEE J. Lightwave Technology, Vol.19, No. 4, pp. 546-552, 2001.
4. W. Zhou, P. Bhattacharya and O. Qasaimeh, " InP-Based cylindrical microcavity light-emitting diodes," IEEE J. Quantum Electron., Vol. 37, No. 1, pp. 48-54, 2001.
5. O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, " Monolithically integrated low- power phototransceiver incorporating InGaAs quantum dot microcavity LED and modulated barrier photodiode," Electron. Lett., Vol. 36, No. 23, pp. 1255-1257, 2000.
6. O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, " Monolithically integrated low- power phototransceiver incorporating microcavity LEDs and multiquantum well phototransistors," IEEE Photon. Tech. Lett., Vol. 12 No. 12, pp. 1683-1685, 2000.
7. O. Qasaimeh, Z. Ma, P. Bhattacharya and E. Croke, " Monolithically integrated multichannel SiGe/Si p-i-n–HBT photoreceiver arrays," IEEE J. Lightwave Technology, Vol. 18, No. 11, pp. 1548-1553, 2000.
8. S. Ghosh, A. Lenihan, M. Dutt, O. Qasaimeh, D. Steel and P. Bhattacharya, “Non-linear optical and electro-optic properties of InAs/GaAs self-organized quantum dots,” J. of Vacuum Science and Technology B, 19(4), p. 1455, Jul/Aug 2001.
9. S. Krishna, O. Qasaimeh, P. Bhattacharya, P. McCann and K. Namjou, "Room-temperature far- infrared emission from a self-organized InGaAs/GaAs quantum-dot laser," Appl. Phys. Lett., Vol. 76, No. 23, pp. 3355-3357, 2000.
10. W. D. Zhou, J. Sabarinathan, B. Kochman, E. Berg, O. Qasaimeh, S. Pang and P. Bhattacharya, "Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature," Electron. Lett. Vol. 36, no 18, p. 1541, 2000.
11. J. Xu, O. Qasaimeh, P. Bhattacharya, D. Huffaker and D. Deppe, “GaAs/Al0.3Ga0.7As multiple quantum well dual focus Fresnel lens modulator”, Electron. Lett. Vol. 36, no 1, p. 76, 2000.
12. P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, and D. Zhu, (INVITED) “High- speed modulation and switching characteristics of In(Ga)As/Al(Ga)As self-organized quantum dot lasers”, IEEE J. Selected Topic in Quantum Electronics, Vol. 36, No. 3, pp. 426-458, 2000.
13. P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W.D. Zhou, J.Singh, P.J. McCann and K. Namjou, “Optoelectronic device applications of self-organized In(Ga,Al)As/Ga(Al)As quantum dots”(INVITED), Proceeding of Materials Research Society (Spring Meeting), 2000.
14. S. Krishna, D. Zhu, J. Xu, K. Linder, O. Qasaimeh, P. Bhattacharya, and D. Huffaker, “Structural and luminescence characteristics of cycled submonolayer InAs/GaAs Quantum dots with room temperature emission at 1.3m”, J. of Appl. Phys., Vol 86, no. 11, pp6135-8, 1999.
15. H. Gebretsadik, O. Qasaimeh, H. Jiang, and P. Bhattacharya, “Design and realization of a 1.55m patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers” IEEE J. Lightwave Technology, Vol. 17, No. 12, pp. 1-10, 1999.
16. P. Goetz, H. Eisel, K. Yang, S. Kaochih, O. Qasaimeh, and P. Bhattacharya, “High-based MMIC components for an optical phase-locked loop,”IEEE Transactions on Microwave Theory and Techniques. Vol. 47, no. 7, pp. 1241-50, 1999.
17. W.-D. Zhou, O. Qasaimeh, J. Phillips, S. Krishna, and Bhattacharya-P, “Bias-controlled wavelength switching in coupled-cavity InGaAs/GaAs self-organized quantum dot lasers”, Appl. Phys. Letters, Vol. 74, No. 6, pp. 783-785, 1999. 18. O. Qasaimeh, W.-D. Zhou, J. Phillips, S. Krishna, and Bhattacharya-P, “Bistability and self-pulsation in quantum dot lasers with intracavity quantum dot saturable absorbers”, Appl. Phys. Lett., Vol. 74, No. 12, pp. 1654-1656, 1999.
19. K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya, “Self-organized
In0.4Ga0.6As quantum-dot lasers grown on Si substrates,” Appl. Phys. Lett., Vol. 74, No. 10, pp. 1355- 1357, 1999.
20. K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya and J. Jiang, “In0.4Ga0.6As Self-organized quantum-dot light emitters grown on Silicon substrates,” Journal of Crystal Growth., Vol. 201-201, pp. 1186-1189, May 1999.
21. K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya, “Growth and
electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon,”J. Vac. Sci. Technol. B, 17(3), pp. 1116-1119, 1999.
22. H. Gebretsadik, P. Bhattacharya, K. Kamath, O. Qasaimeh, D. Klotzkin, C. Caneau, and R. Bhat, “InP-based 1.5m vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors “, Electronics-Letters, Vol. 34, No. 13, pp. 1316-1318, 1998.
23. O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, “Linear and quadratic electro-optic coefficients of self-organized InGaAs/GaAs quantum dots,”Appl. Phys. Lett., Vol. 72, No. 11, pp.1275-1277, 1998.
24. O. Qasaimeh, P. Bhattacharya, and E. Croke, “SiGe/Si Quantum Well Electroabsorption Modulators,” IEEE Photonics Technology Letters, Vol. 10, No.6, pp. 807-809, 1998.
25. O. Qasaimeh, J. Singh, and P. Bhattacharya, “Electroabsorption and Electrooptic Effect in SiGe-Si Quantum Wells: Realization of Low-Voltage Optical Modulators, IEEE J. Quantum Electronics, Vol. 33, No. 9, pp. 1532-1536, 1997.
26. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, L. Katehi, P. Bhattacharya, and E. Croke, “Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers,” IEEE Photonics Technology Letters, Vol. 10, No.3, pp. 415-417, 1998.
27. J.-S. Rieh, O. Qasaimeh, L.-H. Lu, K. Yang, L. Katehi, P. Bhattacharya, and E. Croke, “Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology,” IEEE Microwave and Guided Wave Letters, Vol. 8, No.2, pp. 63-65, 1998.
28. Y. Zebda, and O. Qasaimeh, “Frequency Response and Gain of Multiquantum Well Avalanche Photodiode,” J. of Optical Communications, Vol. 18, No. 3, pp. 99-103, 1997. 29. Y. Zebda, and O. Qasaimeh, “Analysis of Transient Response of Light Amplifying Optical Switch (LAOS),” Optics Communications, Vol. 135, Issue 1-3, pp.128-132, 1997
30. O. Qasaimeh, and Y. Zebda, “Effect of Bandgap Discontinuity on the Cut-off Frequency, Base Transit Time and Junction Capacitance of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors,” International Journal of Electronics, Vol. 84, no. 1, pp. 25-35, 1998.
31. Y. Zebda, and O. Qasaimeh, “Modified Diffusivity-Mobility Relation,” International Journal of Electronics, Vol. 81, No. 3, pp. 291-296, 1996.
32. Y. Zebda, and O. Qasaimeh, “Effect of Carrier Transition Mechanisms on Frequency Response of Multiquantum Well PIN Photodiode,” Optics Communications; Vol. 123, No. 1-3, pp 71-75; 1996.
33. Y. Zebda, and O. Qasaimeh, “A Modified Model of Light Amplifying Optical Switch (LAOS),” IEEE J. of Quantum Electronics Vol. 31, No. 7, pp. 1302-1307, 1995.
34. Y. Zebda, and O. Qasaimeh, “Effect of Impact Ionization Coefficient Ratio on Gain and Frequency Response of Avalanche Photodiode,” Optics Communications, Vol. 109, pp. 422-427, 1994.
35. Y. Zebda, and O. Qasaimeh, “Frequency Response and Quantum Efficiency of PIN Photodiode,” Journal of Optical Communications, Vol. 15, No. 5, pp. 185-189, 1994.
36. Y. Zebda, and O. Qasaimeh, “Current and Current Gain Analysis of Passivated Heterojunction Bipolar Transistors (HBT),” IEEE Transaction on Electron Devices, Vol. 41, No. 12, pp. 2233-2240, 1994.
37. Y. Zebda, and O. Qasaimeh, “A New Physical Model of Light Amplifying Optical Switch, IEEE Transaction on Electron Devices, Vol. 41, No. 12, pp. 2248-2255, 1994.
38. Y. Zebda, and O. Qasaimeh, “Frequency and Time Response of PIN Photodiode, Journal of Optics, Vol. 22, No. 3, pp.85-91, 1993.
CONFERENCE PRESENTATIONS:
1. O. Qasaimeh, “Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers” International conference on electrical engineering and Technology, Venice, Italy April 2011, WASET 76, pp. 456-461. 2. P. Bhattacharya, S. Pradhan, W. Zhou and O. Qasaimeh,’ Low Power Phototransceivers And Phototransceiver Arrays for High Density Opical Interconnect and Imaging Applications,’’ The Electrochemical Society First International Symposium On Integrated Optoelectronics, May 12- 17, 2002, Philadelphia, PA.
3. D. A. Ackerman, J. E. Johnson, L. J. P. Ketelsen, J.M. Geary, W.A. Asous, F.S. Walters, J. M. Freund, M. S. Hybertsen, K.G. Glogovsky, C. W. Lentz, C.L. Reynolds, R. B. Bylsma, E.J. Dean, L. E. Eng, O. Qasaimeh, R. Gupta, F. Ganikhanova, V. Veliadis, S. Roycraft, T. Pinnington and G. Rao (INVITED), “A Practical Approach to Wavelength Selectable DWDM Sources,” presented in IEEE/LEOS’01 14th annual meeting, Nov. 12-15, 2001, San Diego, CA. 4. O. Qasaimeh et al. (INVITED), “High-Power Tunable DBR Laser for Digital Communication Systems,” presented in ITCom, August 20-24, 2001, Denver, CO.
5. P. Bhattacharya, O. Qasaimeh and J-S. Rieh, (INVITED) "SiGe/Si-Based Optoelectronic Devices for High-speed Communication Applications" to be presented in 2001 IEEE Topical Meeting on Silicon Monolithic Circuits in RF Systems, Sept 12-14, 2001, Ann Arbor, MI.
6. P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. D. Zhou, J. Singh, P. J. McCann and K. Namjou (INVITED), “ Optoelectronic device applications of self-organized In(Ga,Al)As/Ga(Al)As quantum dots”, Proceeding of Materials Research Society 2000 (Spring Meeting).
7. O. Qasaimeh, W.D. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, “Ultra-low Power Monolithically Integrated InGaAs/GaAs Phototransceiver Incorporaing a Modulated Barrier Photodiode and a Quantum Dot Microcavity LED ,” IEEE/LEOS’00 13th annual meeting, Nov. 13-16, 2000, Rio Grande, Puerto Rico.
8. J. Sabarinathan, W.D. Zhou, B. Kochman, E. Berg, O. Qasaimeh, T. Brock, S. Pang and P. Bhattacharya, “Room Temperature Operation of an Electrically Injected Single-Defect Photonic Bandgap Microcavity Surface-Emitting Laser,” IEEE/LEOS’00 13th annual meeting, Nov. 13-16, 2000, Rio Grande, Puerto Rico.
9. S. Krishna, O. Qasaimeh, P. Bhattacharya, P. McCann and K. Namjou, "Spontaneous far infrared
emission from self organized In0.4Ga0.6As/GaAs quantum dots," presented at the 42th Electronic Materials conference, Denver, CO, 2000. 10. W.D. Zhou, J. Sabarinathan, B. Kochman, E. Berg, O. Qasaimeh, T. Brock, S. Pang and P. Bhattacharya, “Cylindrical Microcavity Light Emitters Realized with Double Oxide-Confinement or Single-Defect Photonic Bandgap Crystals”, IEEE 58th Device Research Conference (DRC), June 19-21, 2000, Denver, CO.
11. O. Qasaimeh, W.D. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, “Monolithically Integrated Low-Power Phototransceiver Incorporating Microcavity LEDs and Multiquantum Well Phototransistors”, IEEE 58th Device Research Conference (DRC), June 19-21, 2000, Denver, CO.
12. W.D. Zhou, O. Qasaimeh, and P. Bhattacharya, “InP-based 1.6m oxide-confined microcavity light emitting diodes”, post deadline paper, Conference on Physics and Simulation of Optoelectronic Devices VIII, Photonics West’00, Jan. 23-28, 2000, San Jose, CA.
13. P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. D. Zhou, J. Singh, P. J. McCann and K. Namjou, "Optoelectronic device applications of self-organized In(Ga,Al)As/Ga(Al)As quantum dots", Proceeding of Materials Research Society 2000 (Spring Meeting).
14. S. Ghosh, A. S. Lenihan, M. V. G. Dutt, O. Qasaimeh, D. G. Steel and P. Bhattacharya, “Non- linear optical and electro-optic properties of InAs/GaAs self-organized quantum dots,” 19th North American Conference on Molecular Beam Epitaxy, October, 2000, Arizona.
15. S. Krishna, D. Zhu, W.D. Zhou, O. Qasaimeh, P. Bhattacharya, P.J. McCann, and K. Namjou, “Self organized InGaAs/GaAs quantum dot intersubband (~12m) electroluminescent devices”, XIth International Conference on Molecular Beam Epitaxy, Spetember, 2000, Beijing, China.
16. O. Qasaimeh, H. Gebretsadik, and P. Bhattacharya, “Patterned 1.54m vertical cavity laser with mismatched defect-free mirrors”, presented at International Electron Device Meeting (IEDM), Washington DC, December 1999
17. P. Bhattacharya, H. Gebretsadik, O. Qasaimeh, (INVITED)” 1.55m Patterned VCSELs with Mismatched mirrors,” Lasers and Electro-optic Society (LEOS) Summer Toptical Meeting, San Diego, July, 1999.
18. P. Bhattacharya, J. Phillips, S. Krishna, O. Qasaimeh, and W.D. Zhou, “Carrier dynamics and ultrafast photonic device application of self-organized quantum dots” (INVITED), Femtosecond Science and Technology Conference, 1999, Chiba, Japan. 19. J. Phillips, D. Klotzkin, O. Qasaimeh, W. Zhou, and P. Bhattacharya, (INVITED)”High-speed modulation of quantum-dot lasers,” Lasers and Electro-optic Society (LEOS) Summer Toptical Meeting, San Diego, CA, July, 1999.
20. P. Bhattacharya, H. Gebretsadik, O. Qasaimeh, C. Caneau and R. Bhat, (INVITED) “1.55m
VCSELs with directly grown AlGaAs/GaAs and AlxOy/GaAs DBR mirrors,” SPIE's International Symposium on Integrated Optoelectronic Devices, Photonics West, San Jose, CA, January 1999.
21. P. Bhattacharya, H. Gebretsadik, O. Qasaimeh, C. Caneau and R. Bhat,”Patterned 1.55m VCSELs and VCSEL/modulators with directly grown GaAs-based DBRs”, Workshop on Frontiers in Optoelectronics (WOFOP), Seoul, Korea, November 1998.
22. K. Linder, J. Phillips,S. Krishna, O. Qasaimeh, and P. Bhattacharya, (INVITED) “Growth and Properties of Self-Organized InGaAs/GaAs Quantum Dot Light Emitting Diodes on Silicon substrate,” IEEE Laser and Electro-optics Society Annual Meeting, Orlando, FL, December 1998.
23. K. K. Linder, J. Phillips, O. Qasaimeh, S. Krishna, and P. Bhattacharya, “Growth and Electroluminescenct Properties of Self-Organized InGaAs/GaAs Quantum Dots Grown on Silicon,” Proceedings for 1998 North American Conf. on Molecular Beam Epitaxy, State College, PA, October 1998.
24. K. Linder, J. Phillips, O. Qasaimeh, and P. Bhattacharya,”In(Ga)As/GaAs self-organized quantum dot light emitters grown on Silicon substrate,” International Conference on Molecular Beam Epitaxy, Cannes, France, September 1998.
25. J.-S. Rieh, O. Qasaimeh, D. Klotzkin, L-H. Lu, K. Yang, L. Katehi, P. Bhattacharya, and E. Croke,”Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers,” Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, August 1997. 26. Y. Zebda and O. Qasaimeh, “Frequency Response of Multiquantum Well (MQW) PIN photodiode,” presented at the First International Conference on Electronic, Circuits, and System, Cairo, Egypt, December 1994. 27. Y. Zebda and O. Qasaimeh, “Frequency and Time Response of PIN Photodiode, presented at the First National Jordanian Conference on Electrical Eng., Mu'tah University, Karak, Jordan, April 1993. REFERENCES Prof. Pallab Bhattacharya James R. Mellor Professor of Engineering Electrical Engineering and Computer Science The University of Michigan 1301 Beal Ave. Ann Arbor, MI 48109-2112 [email protected] Tel: (734) 647-1759
Prof. Diana Huffaker Center for High Technology Materials University of New Mexico Albuquerque, NM 87131-0001 [email protected]. Tel: (505) 272-7845
Prof. Mansour I. Abbadi Department of Electrical Engineering Jordan University of Science and Technology P. O. Box 3030 Irbid 22110, Jordan E-mail: [email protected] Tel: 962-2-7201-000 Ext.: (22550)
Prof Omar Asfar Department of Electrical Engineering Jordan University of Science and Technology P. O. Box 3030 Irbid 22110, Jordan E-mail: [email protected] Tel: 962-2-7201-000 Ext.: (22558)