Covalent Functionalized Black Phosphorus Quantum Dots
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Electronic Structure of Graphene– and BN–Supported Phosphorene
This document is downloaded from DR‑NTU (https://dr.ntu.edu.sg) Nanyang Technological University, Singapore. Electronic structure of graphene– and BN–supported phosphorene Kistanov, Andrey A.; Saadatmand, Danial; Dmitriev, Sergey V.; Zhou, Kun; Korznikova, Elena A.; Davletshin, Artur R.; Ustiuzhanina, Svetlana V. 2018 Davletshin, A. R., Ustiuzhanina, S. V., Kistanov, A. A., Saadatmand, D., Dmitriev, S. V., Zhou, K., & Korznikova, E. A. (2018). Electronic structure of graphene– and BN–supported phosphorene. Physica B: Condensed Matter, 534, 63‑67. doi:10.1016/j.physb.2018.01.039 https://hdl.handle.net/10356/90092 https://doi.org/10.1016/j.physb.2018.01.039 © 2018 Elsevier B.V. All rights reserved. This paper was published in Physica B: Condensed Matter and is made available with permission of Elsevier B.V. Downloaded on 02 Oct 2021 11:03:45 SGT Electronic structure of graphene– and BN–supported phosphorene Artur R. Davletshin1, Svetlana V. Ustiuzhanina2, *Andrey A. Kistanov2, 3 , 4, Danial Saadatmand5, Sergey V. Dmitriev2, 6, Kun Zhou3 and Elena A. Korznikova2 1Ufa State Petroleum Technological University, Ufa 450000, Russia 2Institute for Metals Superplasticity Problems, Russian Academy of Sciences, Ufa 450001, Russia 3School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore 4Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore 138632, Singapore 5Department of Physics, University of Sistan and Baluchestan, Zahedan, Iran 6National Research Tomsk State University, Tomsk 634050, Russia Abstract By using first–principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene–supported phosphorene is found to be metallic, while the BN–supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV. -
Technology and Applications of 2D Materials in Micro- and Macroscale Electronics
Technology and Applications of 2D Materials in Micro- and Macroscale Electronics by Marek Hempel B.S., RWTH Aachen University (2010) M.S., RWTH Aachen University (2013) Submitted to the Department of Electrical Engineering and Computer Science in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY May 2020 © Massachusetts Institute of Technology 2020. All rights reserved. Author ……………………………………………………………………………………………………………………………………………………… Department of Electrical Engineering and Computer Science May 15, 2020 Certified by ………………………………………………………………………………………………………………………………………………. Tomás Palacios Professor of Electrical Engineering and Computer Science Thesis Supervisor Certified by ………………………………………………………………………………………………………………………………………………. Jing Kong Professor of Electrical Engineering and Computer Science Thesis Supervisor Accepted by ……………………………………………………………………………………………………………………………………………… Leslie A. Kolodziejski Professor of Electrical Engineering and Computer Science Chair, Department Committee on Graduate Students 1 2 Technology and Applications of 2D-Materials in Micro- and Macroscale Electronics by Marek Hempel Submitted to the Department of Electrical Engineering and Computer Science on May 15, 2020, in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Abstract: Over the past 50 years, electronics has truly revolutionized our lives. Today, many everyday objects rely on electronic circuitry from gadgets such as wireless earbuds, smartphones and -
Arxiv:1407.5880V3 [Cond-Mat.Mes-Hall] 14 Aug 2014
Oxygen defects in phosphorene A. Ziletti,1 A. Carvalho,2 D. K. Campbell,3 D. F. Coker,1, 4 and A. H. Castro Neto2, 3 1Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA 2Graphene Research Centre and Department of Physics, National University of Singapore, 117542, Singapore 3Department of Physics, Boston University, 590 Commonwealth Avenue, Boston Massachusetts 02215, USA 4Freiburg Institute for Advanced Studies (FRIAS), University of Freiburg, D-79104, Freiburg, Germany Surface reactions with oxygen are a fundamental cause of the degradation of phosphorene. Using first-principles calculations, we show that for each oxygen atom adsorbed onto phosphorene there is an energy release of about 2 eV. Although the most stable oxygen adsorbed forms are electrically inactive and lead only to minor distortions of the lattice, there are low energy metastable forms which introduce deep donor and/or acceptor levels in the gap. We also propose a mechanism for phosphorene oxidation and we suggest that dangling oxygen atoms increase the hydrophilicity of phosphorene. PACS numbers: 73.20.At,73.20.Hb Phosphorene, a single layer of black phosphorus[1, 2], phosphorene is exoenergetic and leads to the formation of has revealed extraordinary functional properties which neutral defects, as well as to metastable electrically active make it a promising material not only for exploring novel defect forms. We also discuss the conditions necessary for physical phenomena but also for practical applications. extensive oxidation and propose strategies to control it. In contrast to graphene, which is a semi-metal, phospho- Oxygen defects were modeled using first-principles cal- rene is a semiconductor with a quasiparticle band gap of 2 culations based on density functional theory (DFT), as eV. -
Reconfigurable Polarizer Based on Bulk Dirac Semimetal Metasurface
crystals Article Reconfigurable Polarizer Based on Bulk Dirac Semimetal Metasurface Yannan Jiang, Jing Zhao and Jiao Wang * Guangxi Key Laboratory of Wireless Wideband Communication & Signal Processing, Guilin 541000, China; [email protected] (Y.J.); [email protected] (J.Z.) * Correspondence: [email protected] Received: 22 February 2020; Accepted: 16 March 2020; Published: 21 March 2020 Abstract: In this paper, we propose a reflective polarizer in terahertz regime, which utilizes the Bulk-Dirac-Semimetal (BDS) metasurface can be dynamically tuned in broadband. The proposed polarizer is capable of converting the linear polarized wave into the circular polarized or the cross polarized waves by adjusting the Fermi energy (EF) of the BDS. In the frequency range of 0.51 THz and 1.06 THz, the incident linear polarized wave is converted into a circular polarized wave with an axial ratio (AR) less than 3 dB when EF = 30 meV. When EF = 45 meV, the cross-polarization conversion is achieved with the polarization conversion ratio (PCR) greater than 90% in the band of 0.57 1.12 THz. Meanwhile, the conversion efficiencies for both polarization conversions are in − excess of 90%. Finally, the physical mechanism is revealed by the decomposition of two orthogonal components and the verification is presented by the interference theory. Keywords: reconfigurable polarizer; tunable metasurface; broadband; Bulk-Dirac-Semimetal 1. Introduction In recent years, terahertz (THz) technology has developed rapidly in many fields, such as sensing [1], imaging [2] and radar [3] because terahertz waves have very low photon energy, strong penetrability, and obvious characteristic absorption peaks, making terahertz technology show significant research value and great prospects in material detection, security inspection, military, and wireless communications. -
An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu Purdue University, Birck Nanotechnology Center, [email protected]
Purdue University Purdue e-Pubs Birck and NCN Publications Birck Nanotechnology Center 4-2014 Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu Purdue University, Birck Nanotechnology Center, [email protected] Adam T. Neal Purdue University, Birck Nanotechnology Center, [email protected] Zhen Zhu Michigan State University Xianfan Xu Purdue University, Birck Nanotechnology Center, [email protected] David Tomanek Michigan State University See next page for additional authors Follow this and additional works at: http://docs.lib.purdue.edu/nanopub Part of the Nanoscience and Nanotechnology Commons Liu, Han; Neal, Adam T.; Zhu, Zhen; Xu, Xianfan; Tomanek, David; Ye, Peide D.; and Luo, Zhe, "Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility" (2014). Birck and NCN Publications. Paper 1584. http://dx.doi.org/10.1021/nn501226z This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. Authors Han Liu, Adam T. Neal, Zhen Zhu, Xianfan Xu, David Tomanek, Peide D. Ye, and Zhe Luo This article is available at Purdue e-Pubs: http://docs.lib.purdue.edu/nanopub/1584 ARTICLE Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Han Liu,†,‡ Adam T. Neal,†,‡ Zhen Zhu,§ Zhe Luo,‡,^ Xianfan Xu,‡,^ David Toma´ nek,§ and Peide D. Ye†,‡,* †School of Electrical and Computer Engineering and ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States, §Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States, and ^School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States ABSTRACT We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. -
Science & Technology Trends 2020-2040
Science & Technology Trends 2020-2040 Exploring the S&T Edge NATO Science & Technology Organization DISCLAIMER The research and analysis underlying this report and its conclusions were conducted by the NATO S&T Organization (STO) drawing upon the support of the Alliance’s defence S&T community, NATO Allied Command Transformation (ACT) and the NATO Communications and Information Agency (NCIA). This report does not represent the official opinion or position of NATO or individual governments, but provides considered advice to NATO and Nations’ leadership on significant S&T issues. D.F. Reding J. Eaton NATO Science & Technology Organization Office of the Chief Scientist NATO Headquarters B-1110 Brussels Belgium http:\www.sto.nato.int Distributed free of charge for informational purposes; hard copies may be obtained on request, subject to availability from the NATO Office of the Chief Scientist. The sale and reproduction of this report for commercial purposes is prohibited. Extracts may be used for bona fide educational and informational purposes subject to attribution to the NATO S&T Organization. Unless otherwise credited all non-original graphics are used under Creative Commons licensing (for original sources see https://commons.wikimedia.org and https://www.pxfuel.com/). All icon-based graphics are derived from Microsoft® Office and are used royalty-free. Copyright © NATO Science & Technology Organization, 2020 First published, March 2020 Foreword As the world Science & Tech- changes, so does nology Trends: our Alliance. 2020-2040 pro- NATO adapts. vides an assess- We continue to ment of the im- work together as pact of S&T ad- a community of vances over the like-minded na- next 20 years tions, seeking to on the Alliance. -
Modulation of Phosphorene for Optimal Hydrogen Evolution Reaction
Research Article Cite This: ACS Appl. Mater. Interfaces 2019, 11, 37787−37795 www.acsami.org Modulation of Phosphorene for Optimal Hydrogen Evolution Reaction † † † † † ‡ † § Jiang Lu, Xue Zhang, Danni Liu, Na Yang, Hao Huang, Shaowei Jin, Jiahong Wang,*, , § † Paul K. Chu, and Xue-Feng Yu † Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China ‡ National Supercomputing Center, Shenzhen, Guangdong 518055, P. R. China § Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China *S Supporting Information ABSTRACT: Economical and highly effective catalysts are crucial to the electrocatalytic hydrogen evolution reaction (HER), and few-layer black phosphorus (phosphorene) is a promising candidate because of the high carrier mobility, large specific surface area, and tunable physicochemical characteristics. However, the HER activity of phosphorene is limited by the weak hydrogen adsorption ability on the basal plane. In this work, optimal active sites are created to modulate the electronic structure of phosphorene to improve the HER activity and the effectiveness is investigated theoretically by density-functional theory calculation and verified experimentally. The edges and defects affect the electronic density of states, and a linear relationship between the HER activity and lowest unoccupied states ε ε ( LUS) is discovered. The medium LUS value corresponds to the suitable hydrogen adsorption strength. Experiments are designed and performed to verify the prediction, and our results show that a smaller phosphorene moiety with more edges and defects exhibits better HER activity and surface doping with metal adatoms improves the catalytic performance. -
Recent Advances in Synthesis, Properties, and Applications of Phosphorene
www.nature.com/npj2dmaterials REVIEW ARTICLE OPEN Recent advances in synthesis, properties, and applications of phosphorene Meysam Akhtar1,2, George Anderson1, Rong Zhao1, Adel Alruqi1, Joanna E. Mroczkowska3, Gamini Sumanasekera1,2 and Jacek B. Jasinski2 Since its first fabrication by exfoliation in 2014, phosphorene has been the focus of rapidly expanding research activities. The number of phosphorene publications has been increasing at a rate exceeding that of other two-dimensional materials. This tremendous level of excitement arises from the unique properties of phosphorene, including its puckered layer structure. With its widely tunable band gap, strong in-plane anisotropy, and high carrier mobility, phosphorene is at the center of numerous fundamental studies and applications spanning from electronic, optoelectronic, and spintronic devices to sensors, actuators, and thermoelectrics to energy conversion, and storage devices. Here, we review the most significant recent studies in the field of phosphorene research and technology. Our focus is on the synthesis and layer number determination, anisotropic properties, tuning of the band gap and related properties, strain engineering, and applications in electronics, thermoelectrics, and energy storage. The current needs and likely future research directions for phosphorene are also discussed. npj 2D Materials and Applications (2017) 1:5 ; doi:10.1038/s41699-017-0007-5 INTRODUCTION properties, including high carrier mobility, ultrahigh surface area, Since the discovery of graphene in 2004 (ref. 1), there has been a excellent thermal conductivity, and quantum confinement effect 9 quest for new two-dimensional (2D) materials aimed at fully have been well documented. However, the lack of band gap is a exploring new fundamental phenomena stemming from quantum serious limitation for the use of graphene in electronic devices. -
Phosphorene: an Emerging 2D Material with Unique Applications
Phosphorene: An Emerging 2D Material with Unique Applications Priti Kharel Literature Seminar November 7th, 2019 The pioneering study of graphene in 2004 revealed that 2D materials exhibit unique properties because of the quantum confinement and size reduction effects.1 Graphene has a high carrier mobility, thermal conductivity and mechanical strength, all of which have paved its way for advanced technological applications.2 Over the past decade, new 2D materials are being extensively explored to unveil characteristics that can broaden their utilities. One such 2D material is phosphorene (Figure 1), which is a single- or few-layer form of black phosphorus (BP).3 Phosphorene distinguishes itself from other 2D materials due to its thickness dependent direct bandgap that spans over a wide range of electromagnetic spectrum (mid-IR to visible).3 It also has extremely high carrier mobility for a 2D semiconductor (~1000 cm2 V-1 s-1) and displays unique in-plane anisotropy.3,4 Phosphorene has a corrugated structure with aa each phosphorus (P) atom covalently bonded to other three P-atoms (Figure 1).5 Despite the suffix ‘ene’, the P-atoms are sp3 hybridized and yield the puckered configuration to maximize the distance between 6 single electron pair positioned at each atom. Its Zigzag structure is also responsible for the anisotropy in the material where the preferred electron transport direction (armchair) is perpendicular to the preferred thermal conduction direction (zigzag) (Figure 1).7 In Armchair addition, phosphorene may exhibit preferential b binding to certain molecules due to their interaction with the lone pairs in P-atoms.8 Such molecular specificity combined with the high surface area of phosphorene makes it suitable for gas sensors.8 Phospherene also has a direct bandgap that can be tuned by changing the number of layers (1.45 eV in P atoms on the top P atoms on the bottom monolayer to 0.33 eV in bulk).9,10 Due to such broadband absorption, phospherene can serve as an Figure 1. -
Colloidal Electronics
Colloidal Electronics by (Albert) Tianxiang Liu B.S. Chemical Engineering, California institute of Technology, 2014 SUBMITTED TO THE DEPARTMENT OF CHEMICAL ENGINEERING IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY IN CHEMICAL ENGINEERING AT THE MASSACHUSETTS INSTITUTE OF TECHNOLOGY July 2020 © 2020 Massachusetts Institute of Technology. All rights reserved. Signature of author ............................................................................................................................. Department of Chemical Engineering July 27, 2020 Certified by ........................................................................................................................................ Michael S. Strano Carbon P. Dubbs Professor of Chemical Engineering Thesis Supervisor Accepted by ....................................................................................................................................... Patrick S. Doyle Robert T. Haslam (1911) Professor of Chemical Engineering Graduate Officer 2 Colloidal Electronics by (Albert) Tianxiang Liu Submitted to the Department of Chemical Engineering on July 27, 2020, in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Chemical Engineering Abstract Arming nano-electronics with mobility extends artificial systems into traditionally inaccessible environments. Carbon nanotubes (1D), graphene (2D) and other low-dimensional materials with well-defined lattice structures can be incorporated into polymer microparticles, -
Fabrication and Application of Black Phosphorene/Graphene Composite Material As a Flame Retardant
Article Fabrication and Application of Black Phosphorene/Graphene Composite Material as a Flame Retardant Xinlin Ren 1,2,3, Yi Mei 2,3,*, Peichao Lian 2,3,*, Delong Xie 2,3, Weibin Deng 2,3, Yaling Wen 2,3 and Yong Luo 2,3 1 Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming 650500, China; [email protected] 2 Faculty of Chemical Engineering, Kunming University of Science and Technology, Kunming 650500, China; [email protected] (D.X.); [email protected] (W.D.); [email protected] (Y.W.); [email protected] (Y.L) 3 The Higher Educational Key Laboratory for Phosphorus Chemical Engineering of Yunnan Province, Kunming University of Science and Technology, Kunming 650500, China * Correspondence: [email protected] (Y.M.); [email protected] (P.L.); Tel.: +86-0871-65920171 (Y.M. and P.L.) Received: 26 December 2018; Accepted: 21 January 2019; Published: 22 January 2019 Abstract: A simple and novel route is developed for fabricating BP-based composite materials to improve the thermo-stability, flame retardant performances, and mechanical performances of polymers. Black phosphorene (BP) has outstanding flame retardant properties, however, it causes the mechanical degradation of waterborne polyurethane (WPU). In order to solve this problem, the graphene is introduced to fabricate the black phosphorene/graphene (BP/G) composite material by high-pressure nano-homogenizer machine (HNHM). The structure, thermo-stability, flame retardant properties, and mechanical performance of composites are analyzed by a series of tests. The structure characterization results show that the BP/G composite material can distribute uniformly into the WPU. -
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
REVIEW Black Phosphorus www.advenergymat.de Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices Jinbo Pang, Alicja Bachmatiuk, Yin Yin, Barbara Trzebicka, Liang Zhao, Lei Fu, Rafael G. Mendes, Thomas Gemming, Zhongfan Liu, and Mark H. Rummeli* to the extreme high-pressure heating con- The successful isolation of phosphorene (atomic layer thick black phos- ditions required for its synthetic prepara- phorus) in 2014 has currently aroused the interest of 2D material researchers. tion, as well as a lack of knowledge of its applications. Then, a decade ago, Park In this review, first, the fundamentals of phosphorus allotropes, phos- and Sohn[2] exploited high-energy ball phorene, and black phosphorus, are briefly introduced, along with their struc- milling to fabricate black phosphorus as tures, properties, and synthesis methods. Second, the readers are presented anode materials for rechargeable lithium with an overview of their energy applications. Particularly in electrochemical ion batteries. Eventually, bulk crystals of energy storage, the large interlayer spacing (0.53 nm) in phosphorene allows black phosphorus were successfully fab- the intercalation/deintercalation of larger ions as compared to its graphene ricated in large batches by Nilges and co-workers[3–5] using a chemical vapor counterpart. Therefore, phosphorene may possess greater potential for high transport approach. This prompted its electrochemical performance. In addition, the status of lithium ion batteries exploration in energy-related devices such as well as secondary sodium ion batteries is reviewed. Next, each applica- as secondary ion batteries, supercapaci- tion for energy generation, conversion, and storage is described in detail tors, and solar cells.