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Freescale Semiconductor Document Number: MRFE6VS25L Technical Data Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are 1.8--2000 MHz, 25 W, 50 V encountered. WIDEBAND Typical Performance: VDD =50Volts RF POWER LDMOS TRANSISTOR

Frequency Pout Gps ηD IMD (MHz) Signal Type (W) (dB) (%) (dBc) 1.8--30 (1,3) Two--Tone 25 PEP 25.0 50.0 -- 2 8 (10 kHz spacing) 30--512 (2,3) Two--Tone 25 PEP 17.3 32.0 -- 3 2 (200 kHz spacing) 512 (4) Pulse 25 Peak 25.9 74.0 — (100 μsec, 20% Duty Cycle) N I -- 3 6 0 -- 2 512 (4) CW 25 26.0 75.0 — Load Mismatch/Ruggedness

Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result 30 (1) CW >65:1 0.11 50 No Device at all Phase Degradation (3 dB Gate 12Drain Angles Overdrive) 512 (2) CW 0.95 (3 dB Overdrive) 512 (4) Pulse 0.14 Peak (100 μsec, 20% (3 dB (Top View) Duty Cycle) Overdrive) Note: The backside of the package is the 512 (4) CW 0.14 source terminal for the transistor. (3 dB Figure 1. Pin Connections Overdrive) 1. Measured in 1.8--30 MHz broadband reference circuit. 2. Measured in 30--512 MHz broadband reference circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range. 4. Measured in 512 MHz narrowband test circuit.

Features • Wide Operating Frequency Range • Extreme Ruggedness • Unmatched, Capable of Very Broadband Operation • Integrated Stability Enhancements • Low Thermal Resistance • Extended ESD Protection Circuit • In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.

Drain--Source Voltage VDSS --0.5, +133 Vdc

Gate--Source Voltage VGS --6.0, +10 Vdc

Storage Temperature Range Tstg --65 to +150 °C

Case Operating Temperature Range TC --40 to +150 °C (1,2) Operating Junction Temperature Range TJ --40 to +225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit

Thermal Resistance, Junction to Case RθJC 1.4 °C/W CW: Case Temperature 81°C, 25 W CW, 50 Vdc, IDQ = 10 mA, 512 MHz

Thermal Impedance, Junction to Case ZθJC 0.32 °C/W Pulse: Case Temperature 77°C, 25 W Peak, 100 μsec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 10 mA, 512 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2000 V Machine Model (per EIA/JESD22--A115) B, passes 200 V Charge Device Model (per JESD22--C101) IV, passes 1200 V

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics

Gate--Source Leakage Current IGSS — — 400 nAdc (VGS =5Vdc,VDS =0Vdc)

Drain--Source Breakdown Voltage V(BR)DSS 133 140 — Vdc (VGS =0Vdc,ID =50mA)

Zero Gate Voltage Drain Leakage Current IDSS — — 2 μAdc (VDS =50Vdc,VGS =0Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 7 μAdc (VDS = 100 Vdc, VGS =0Vdc) On Characteristics

Gate Threshold Voltage VGS(th) 1.5 2.0 2.5 Vdc (VDS =10Vdc,ID =85μAdc)

Gate Quiescent Voltage VGS(Q) 2.0 2.4 3.0 Vdc (VDD =50Vdc,ID = 10 mAdc, Measured in Functional Test)

Drain--Source On--Voltage VDS(on) — 0.23 — Vdc (VGS =10Vdc,ID = 210 mAdc) Dynamic Characteristics

Reverse Transfer Capacitance Crss — 0.17 — pF (VDS =50Vdc± 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)

Output Capacitance Coss — 14.7 — pF (VDS =50Vdc± 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)

Input Capacitance Ciss — 39.0 — pF (VDS =50Vdc,VGS =0Vdc± 30 mV(rms)ac @ 1 MHz) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued)

MRFE6VS25LR5 RF Device Data 2 Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,IDQ =10mA,Pout = 25 W Peak (5 W Avg.), f = 512 MHz, Pulse, 100 μsec Pulse Width, 20% Duty Cycle

Power Gain Gps 24.5 25.9 27.5 dB

Drain Efficiency ηD 70.0 74.0 — % Input Return Loss IRL — -- 1 6 -- 1 0 dB

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 150 mA

Frequency Signal Pin (MHz) Type VSWR (W) Test Voltage, VDD Result 512 Pulse >65:1 0.14 Peak 50 No Device (100 μsec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive) Degradation CW 0.14 (3 dB Overdrive)

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS

100 1.07 C iss 1.06 IDQ =10mA VDD =50Vdc 1.05 50 mA Coss 1.04 1.03 10 GS(Q) 1.02 100 mA 1.01 1 150 mA 0.99 1 0.98 NORMALIZED V 0.97 C, CAPACITANCE (pF) 0.96 C rss 0.95 0.94 Measured with ±30 mV(rms)ac @ 1 MHz, V =0Vdc 0.1 GS 0.93 02010 30 40 50 -- 5 0--25 0 25 50 75 100

VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 2. Capacitance versus Drain--Source Voltage IDQ (mA) Slope (mV/°C) 10 --2.16 50 --1.79 100 --1.76 150 --1.68

Figure 3. Normalized VGS versus Quiescent Current and Case Temperature

108

ID =0.55Amps VDD =50Vdc 107

106 0.69 Amps

0.83 Amps MTTF (HOURS) 105

104 90 110 130 150 170 190 210 230 250

TJ, JUNCTION TEMPERATURE (°C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. NOTE: For pulse applications or CW conditions, use the MTTF calculator referenced above.

Figure 4. MTTF versus Junction Temperature -- CW

MRFE6VS25LR5 RF Device Data 4 Freescale Semiconductor, Inc. 512 MHz NARROWBAND PRODUCTION TEST FIXTURE

C1 C9

C10 B2

C3 B1

L3 C2 C4 C14 C5 L1 C12

C13 C6 C8 C15 C7 C11 CUT OUT AREA MRFE6VS25L Rev. 3

Figure 5. MRFE6VS25LR5 Narrowband Test Circuit Component Layout — 512 MHz

Table 5. MRFE6VS25LR5 Narrowband Test Circuit Component Designations and Values — 512 MHz Part Description Part Number Manufacturer B1, B2 Long Ferrite Beads 2743021447 Fair-Rite C1 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C9 0.1 μF Chip Capacitors CDR33BX104AKWS AVX C3, C10 0.01 μF Chip Capacitors C0805C103K5RAC Kemet C4, C12, C15 180 pF Chip Capacitors ATC100B181JT500XT ATC C5 18 pF Chip Capacitor ATC100B180JT500XT ATC C6 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C7 15 pF Chip Capacitor ATC100B150JT500XT ATC C8 36 pF Chip Capacitor ATC100B360JT500XT ATC C11 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C13 13 pF Chip Capacitor ATC100B130JT500XT ATC C14 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp L1 33 nH Inductor 1812SMS-33NJLC Coilcraft L2 12.5 nH Inductor A04TJLC Coilcraft L3 82 nH Inductor 1812SMS-82NJLC Coilcraft

PCB 0.030″, εr =2.55 AD255A Arlon

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 5 L3 B2 VSUPPLY B1 C12 + V BIAS C9 C10 C14 + C1 C2 C3 C4 L2

L1 RF OUTPUT Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C15 C11 C13 C5 C6 C7 C8 DUT

Figure 6. MRFE6VS25LR5 Narrowband Test Circuit Schematic — 512 MHz

Table 6. MRFE6VS25LR5 Narrowband Test Circuit Microstrips — 512 MHz Microstrip Description Microstrip Description Z1 0.235″×0.082″ Microstrip Z11 0.475″×0.270″ Microstrip Z2 0.042″×0.082″ Microstrip Z12 0.091″×0.082″ Microstrip Z3 0.682″×0.082″ Microstrip Z13 0.170″×0.082″ Microstrip Z4* 0.200″×0.060″ Microstrip Z14* 0.670″×0.082″ Microstrip Z5 0.324″×0.060″ Microstrip Z15 0.280″×0.082″ Microstrip Z6* 0.200″×0.060″ Microstrip Z16* 0.413″×0.082″ Microstrip Z7 0.089″×0.082″ Microstrip Z17* 0.259″×0.082″ Microstrip Z8 0.120″×0.082″ Microstrip Z18 0.761″×0.082″ Microstrip Z9 0.411″×0.082″ Microstrip Z19 0.341″×0.082″ Microstrip Z10 0.260″×0.270″ Microstrip * Line length includes microstrip bends

MRFE6VS25LR5 RF Device Data 6 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 512 MHz

32 VDD = 50 Vdc, f = 512 MHz 28

20 Pin =0.07W Pin = 0.035 W 16

, OUTPUT POWER (WATTS) 8 out P 4

0 0 0.5 1 1.5 233.52.5

VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. CW Output Power versus Gate--Source Voltage at a Constant Input Power

46 30 90 V = 50 Vdc, f = 512 MHz 50 mA VDD =50Vdc DD 10 mA 44 I =10mA 29 80 DQ I = 150 mA η f = 512 MHz DQ D 42 28 70 100 mA 100 mA 40 27 Gps 150 mA 60 50 mA 38 26 50 , POWER GAIN (dB) DRAIN EFFICIENCY (%) 36 ps 25 10 mA 40 , OUTPUT POWER (dBm) G D, out η P 34 24 30

32 23 20 10 12 14 16 18 20 22 2 10 50

Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS)

f P1dB P3dB Figure 9. Power Gain and Drain Efficiency (MHz) (W) (W) versus CW Output Power and Quescient Current 512 28.7 31.6

Figure 8. CW Output Power versus Input Power

29 90 28 VDD =50Vdc -- 4 0 _C 27 28 I =10mA ηD 80 DQ 26 f = 512 MHz 27 25_C 70 25 85_C 24 26 60 50 V 23 45 V 25 Gps 50 22 T =--40_C 40 V C 21 24 40 35 V , POWER GAIN (dB) , POWER GAIN (dB) 25_C 20 ps DRAIN EFFICIENCY (%) ps

G 30 V G

23 30 D, 19 85_C η 18 25 V IDQ =10mA,f=512MHz 22 20 17 Pulse Width = 100 μsec V =20V 20% Duty Cycle 21 10 16 DD 1 10 50 0 51015 20 25 30 35

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power versus CW Output Power and Drain--Source Voltage

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 7 512 MHz NARROWBAND PRODUCTION TEST FIXTURE

VDD =50Vdc,IDQ =10mA,Pout = 25 W Peak

f Zsource Zload MHz Ω Ω 512 0.72 + j10.8 8.8 + j17.5

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Input Device Output Matching Under Matching Network Test Network 50 Ω 50 Ω

Zsource Zload Figure 12. Narrowband Series Equivalent Source and Load Impedance — 512 MHz

MRFE6VS25LR5 RF Device Data 8 Freescale Semiconductor, Inc. 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT

Table 7. 1.8--30 MHz HF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD =50Volts,IDQ = 100 mA

Pout f Gps ηD IMD Signal Type (W) (MHz) (dB) (%) (dBc) Two-Tone 25 PEP 1.8 25.8 51.5 --28.7 (10 kHz spacing) 10 25.9 50.4 --33.9 30 25.0 50.7 --31.1

Table 8. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Pin (MHz) Signal Type VSWR (W) Test Voltage, VDD Result 30 CW >65:1 0.11 50 No Device at all Phase (3 dB Overdrive) Degradation Angles

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 9 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT

C2 C8 C3 C4 C5 C6 C7

R1 +

L1, E1 C10 C9

C1* L2, E2 C11* Q1

MRFE6VS25L/N Rev. 0 CUT OUT AREA

*C1 and C11 are mounted vertically.

Figure 13. MRFE6VS25LR5 HF Broadband Reference Circuit Component Layout — 1.8--30 MHz

Table 9. MRFE6VS25LR5 HF Broadband Reference Circuit Component Designations and Values — 1.8--30 MHz Part Description Part Number Manufacturer C1, C5, C6, C9, C11 20K pF Chip Capacitors ATC200B203KT50XT ATC C2 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C3 0.1 μF Chip Capacitor CDR33BX104AKWY AVX C4 2.2 μF Chip Capacitor C3225X7R1H225KT TDK C7 0.1 μF Chip Capacitor GRM319R72A104KA01D Murata C8 2.2 μF Chip Capacitor G2225X7R225KT3AB ATC C10 220 μF, 100 V Electolytic Capacitor MCGPR100V227M16X26-RH Multicomp E1 #43 Ferrite Toroid 5943001101 Fair--Rite E2 #61 Ferrite Toroid 5961001101 Fair--Rite L1 4 Turns, 22 AWG, Toroid Transformer with Ferrite E1 8077 Copper Magnetic Wire Belden L2 26 Turns, 22 AWG, Toroid Transformer with Ferrite E2 8077 Copper Magnetic Wire Belden Q1 RF Power LDMOS Transistor MRFE6VS25LR1 Freescale R1 1kΩ, 3 W Chip Resistor CPF31K0000FKE14 Vishay

PCB 0.030″, εr =4.8 S1000 Shenzhen Multilayer PCB Technology

MRFE6VS25LR5 RF Device Data 10 Freescale Semiconductor, Inc. L1, E1 Z4 R1 VBIAS +

C2 C3 C4 C5 Z8 VSUPPLY Z3 + C6 C7 C8 C10 C9 L2, E2 Z7 RF OUTPUT RF Z6 Z9 Z10 INPUT Z1 Z2 Z5 C11

C1 DUT

Figure 14. MRFE6VS25LR5 HF Broadband Reference Circuit Schematic — 1.8--30 MHz

Table 10. MRFE6VS25LR5 HF Broadband Reference Circuit Microstrips — 1.8--30 MHz Microstrip Description Microstrip Description Z1 0.141″×0.047″ Microstrip Z6 0.469″×0.263″ Microstrip Z2 0.625″×0.047″ Microstrip Z7 0.119″×0.063″ Microstrip Z3 0.119″×0.219″ Microstrip Z8 0.422″×0.241″ Microstrip Z4 0.422″×0.241″ Microstrip Z9 0.625″×0.047″ Microstrip Z5 0.469″×0.263″ Microstrip Z10 0.141″×0.047″ Microstrip

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 11 TYPICAL CHARACTERISTICS — 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT

30 130 28 VDD =50Vdc,Pin =0.15W 120 I =25mA 26 DQ 110 24 100 Gps

22 90 , DRAIN D 20 80 η EFFICIENCY (%) 18 ηD 70 16 60

, POWER GAIN (dB) 14 40 ps

G 12 30 P 10 out 20 ,OUTPUT

8 10 out P

6 0 POWER (WATTS) 0 5101520 25 30 35 f, FREQUENCY (MHz) Figure 15. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power

40 35

VDD =50Vdc V =50Vdc P =0.1W 30 DD f=10MHz in Pin =0.05W 30 25 1.8 MHz f=10MHz 1.8 MHz 20 20 30 MHz 15

, OUTPUT POWER (dBm) 10 , OUTPUT POWER (WATTS) 10 out out P P 30 MHz 5

0 0 0 132401243

VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 16. CW Output Power versus Gate--Source Figure 17. CW Output Power versus Gate--Source Voltage at a Constant Input Power Voltage at a Constant Input Power

MRFE6VS25LR5 RF Device Data 12 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT

VDD =50Vdc IDQ =25mA f=10MHz 44

1.8 MHz 40

30 MHz

, OUTPUT POWER (dBm) 36 out P

32 8121620 24

Pin, INPUT POWER (dBm)

f P1dB P3dB (MHz) (W) (W) 1.8 21.9 26.4 10 24.0 28.4 30 23.9 29.1

Figure 18. CW Output Power versus Input Power

30 75 10 MHz VDD =50Vdc f=1.8MHz 28 I =25mA 65 DQ 30 MHz

26 55

1.8 MHz 24 45 10 MHz

, POWER GAIN (dB) 22 30 MHz 35 DRAIN EFFICIENCY (%) ps G

G ps D, η 20 25 ηD 18 15 1 10 100

Pout, OUTPUT POWER (WATTS) Figure 19. Power Gain and Drain Efficiency versus CW Output Power

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 13 TYPICAL CHARACTERISTICS — 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT — TWO--TONE (1)

-- 2 0 -- 2 0

-- 2 5 VDD =50Vdc,IDQ = 100 mA -- 2 5 VDD =50Vdc,IDQ = 100 mA f1 = 1.795 MHz, f2 = 1.805 MHz f1 = 9.995 MHz, f2 = 10.005 MHz -- 3 0 -- 3 0 Two--Tone Measurements Two--Tone Measurements -- 3 5 -- 3 5 -- 4 0 -- 4 0 N DISTORTION (dBc) -- 4 5 N DISTORTION (dBc) -- 4 5 3rd Order 3rd Order -- 5 0 -- 5 0

-- 5 5 5th Order -- 5 5 5th Order -- 6 0 -- 6 0

-- 6 5 7th Order -- 6 5 7th Order

IMD, INTERMODULATIO -- 7 0 IMD, INTERMODULATIO -- 7 0 2 10 30 2 10 30

Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 20. Intermodulation Distortion Figure 21. Intermodulation Distortion Products versus Output Power — 1.8 MHz Products versus Output Power — 10 MHz

-- 2 0

-- 2 5 VDD =50Vdc,IDQ = 100 mA f1 = 29.995 MHz, f2 = 30.005 MHz -- 3 0 Two--Tone Measurements -- 3 5 -- 4 0

N DISTORTION (dBc) 3rd Order -- 4 5 -- 5 0 -- 5 5 5th Order -- 6 0

-- 6 5 7th Order IMD, INTERMODULATIO -- 7 0 2 10 30

Pout, OUTPUT POWER (WATTS) PEP Figure 22. Intermodulation Distortion Products versus Output Power — 30 MHz

1. The distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.

MRFE6VS25LR5 RF Device Data 14 Freescale Semiconductor, Inc. 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT

Zo =50Ω

f=1.8MHz

Zsource f=1.8MHz f=30MHz Zload f=30MHz

VDD =50Vdc,IDQ =25mA,Pout =25WCW

f Zsource Zload MHz Ω Ω 1.8 42.4 + j9.5 47.1 - j1.6 5 44.3 + j3.0 46.8 - j1.2 10 44.2 + j0.4 47.2 - j2.1 15 44.4 - j0.5 47.5 - j3.2 20 44.6 - j1.3 47.7 - j4.3 25 44.8 - j2.0 47.8 - j5.2 30 44.9 - j2.5 47.7 - j6.1

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Input Device Output Matching Under Matching Network Test Network 50 Ω 50 Ω

Zsource Zload Figure 23. HF Broadband Series Equivalent Source and Load Impedance — 1.8--30 MHz

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 15 30--512 MHz BROADBAND REFERENCE CIRCUIT

Table 11. 30--512 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD =50Volts,IDQ = 100 mA

Pout f Gps ηD IMD Signal Type (W) (MHz) (dB) (%) (dBc) Two-Tone 25 PEP 30 20.9 34.2 --32.3 (200 kHz spacing) 100 19.0 38.2 --31.5 512 17.3 32.0 --36.1

Table 12. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Pin (MHz) Signal Type VSWR (W) Test Voltage, VDD Result 512 CW >65:1 0.95 50 No Device at all Phase (3 dB Overdrive) Degradation Angles

MRFE6VS25LR5 RF Device Data 16 Freescale Semiconductor, Inc. 30--512 MHz BROADBAND REFERENCE TEST FIXTURE

D1 C10

C9 C11 E2, L2 C8 R1 R3 T2 C5 C6 C7

E3 L1

C2 R2

C4 Q1 C1 C3

E1 E4

T1 T3 MRFE6VS25L/N Rev. 0

Note: See Figure 24a for a more detailed view of the semi--flex cables with shields and #61 multi--aperture cores.

Figure 24. MRFE6VS25LR5 Broadband Reference Circuit Component Layout — 30--512 MHz

Table 13. MRFE6VS25LR5 Broadband Reference Circuit Component Designations and Values — 30--512 MHz Part Description Part Number Manufacturer C1, C3, C6, C7, C8 1,000 pF Chip Capacitors ATC100B102JT50XT ATC C2 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C4 15 nF Chip Capacitor C3225CH2A153JT TDK C5, C9 10 nF Chip Capacitors GRM3195C1E103JA01 Murata C10 1 μF Chip Capacitor C3225JB2A105KT TDK C11 220 μF, 100 V Electrolytic Capacitor MCGPR100V227M16X26-RH Multicomp D1 8.2 V, 1 W Zener Diode 1N4738A Fairchild Semiconductor E1, E3, E4 #61 Multi-aperture Cores 2861001502 Fair-Rite E2 Ferrite Core Bead 21-201-J Ferronics L1 47 nH Inductor 1812SMS-47NJLC Coilcraft L2 4 Turns, 20 AWG, Toroid Transformer with 8076 Copper Magnetic Wire Belden Ferrite E2 R1 5.6 KΩ, 1/4 W Chip Resistor CRCW12065K60FKEA Vishay R2 15 Ω, 1/4 W Chip Resistor CRCW120615R0FKEA Vishay R3 5kΩ Potentiometer CMS Cermet Multi--turn 3224W-1-502E Bourns T1 25 Ω Semi-flex Cable, 0.945″ Shield Length D260-4118-0000 Microdot T2, T3 25 Ω Semi-flex Cables, 1.340″ Shield Length D260-4118-0000 Microdot

PCB 0.030″, εr =3.5 TC350 Arlon

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 17 Center conductor T2 connection to PCB

Shield connection C3 to PCB C4

E1 T2 E3 E4 T1 SSZ12 E1 T3 T3 T1 S S E4 T3 NOT TO SCALE SS S = Shield

Figure 24a. Detailed View of Semi--flex Cables with Shields and #61 Multi--aperture Cores

VSUPPLY R1 +

L1 C8 C9 C10 C11 L2, E2 D1 R3 C5 C6 T2 C7 Z8 E3 Z9 Z12 RF R2 OUTPUT Z10 Z11 Z14 Z15 Z16 RF T3 INPUT Z1 Z2 Z3 Z4 T1 Z6 Z7 C4 E4 E1 Z13 C1 C3 DUT C2 Z5

Figure 25. MRFE6VS25LR5 Broadband Reference Circuit Schematic — 30--512 MHz

Table 14. MRFE6VS25LR5 Broadband Reference Circuit Microstrips — 30--512 MHz Microstrip Description Microstrip Description Z1 0.180″×0.080″ Microstrip Z9 0.080″×0.310″ Microstrip Z2 0.080″×0.190″ Microstrip Z10 0.260″×0.260″ Microstrip Z3 0.230″×0.190″ Microstrip Z11 0.140″×0.190″ Microstrip Z4 0.150″×0.190″ Microstrip Z12 0.170″×0.080″ Microstrip Z5 0.180″×0.190″ Microstrip Z13 0.210″×0.060″ Microstrip Z6 0.220″×0.190″ Microstrip Z14 0.420″×0.190″ Microstrip Z7 0.230″×0.260″ Microstrip Z15 0.070″×0.140″ Microstrip Z8 0.140″×0.150″ Microstrip Z16 0.190″×0.080″ Microstrip

MRFE6VS25LR5 RF Device Data 18 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 30--512 MHz BROADBAND REFERENCE CIRCUIT

24 120 V =50Vdc,P =0.8W 22 DD in 110 IDQ =25mA 20 100 18 90 G 16 ps 80 14 70 12 60 10 ηD 50

, POWER GAIN (dB) 8 40 ps , DRAIN EFFICIENCY (%) G , OUTPUT POWER (WATTS) 6 30 D η out

4 Pout 20 P 2 10 0 0 0 50 100 150 200 250 300350 400 450 500 550 f, FREQUENCY (MHz) Figure 26. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power

50 40 V =50Vdc DD VDD =50Vdc P =0.65W f=30MHz f=30MHz in Pin = 0.325 W 40 100 MHz 30

30 512 MHz 20

20 100 MHz 512 MHz

, OUTPUT POWER (WATTS) , OUTPUT POWER10 (WATTS)

out 10 out P P

0 0 0 1342 0 1342

VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 27. CW Output Power versus Gate--Source Figure 28. CW Output Power versus Gate--Source Voltage at a Constant Input Power Voltage at a Constant Input Power

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 19 TYPICAL CHARACTERISTICS — 30--512 MHz BROADBAND REFERENCE CIRCUIT

48 f=30MHz 100 MHz

44 512 MHz

36 , OUTPUT POWER (dBm)

out V =50Vdc P 32 DD IDQ =25mA

28 16 2024 28 32 36

Pin, INPUT POWER (dBm)

f P1dB P3dB (MHz) (W) (W) 30 33.4 40.2 100 35.6 44.6 512 32.7 37.7

Figure 29. CW Output Power versus Input Power

24 70

VDD =50Vdc f = 512 MHz 22 60 IDQ =25mA 100 MHz 20 50 30 MHz 30 MHz 18 40 100 MHz 16 30 Gps , POWER GAIN (dB) 512 MHz DRAIN EFFICIENCY (%) ps 14 20 G D, η 12 10 ηD 10 0 1 10 100

Pout, OUTPUT POWER (WATTS) Figure 30. Power Gain and Drain Efficiency versus CW Output Power

MRFE6VS25LR5 RF Device Data 20 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 30--512 MHz BROADBAND REFERENCE CIRCUIT — TWO--TONE (1)

-- 2 0 -- 2 0

3rd Order -- 3 0 -- 3 0 3rd Order

-- 4 0 -- 4 0

N DISTORTION (dBc) -- 5 0 5th Order N DISTORTION (dBc) -- 5 0 5th Order -- 6 0 -- 6 0

VDD =50Vdc,IDQ = 100 mA V =50Vdc,I = 100 mA -- 7 0 7th Order -- 7 0 DD DQ f1 = 29.9 MHz, f2 = 30.1 MHz 7th Order f1 = 99.9 MHz, f2 = 100.1 MHz Two--Tone Measurements Two--Tone Measurements IMD, INTERMODULATIO -- 8 0 IMD, INTERMODULATIO -- 8 0 1 10 40 1 10 40

Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 31. Intermodulation Distortion Figure 32. Intermodulation Distortion Products versus Output Power — 30 MHz Products versus Output Power — 100 MHz

-- 2 0 -- 2 6 3rd Order -- 3 2 -- 3 8 -- 4 4 N DISTORTION (dBc) -- 5 0 5th Order -- 5 6 -- 6 2

-- 6 8 7th Order VDD =50Vdc,IDQ = 100 mA f1 = 511.9 MHz, f2 = 512.1 MHz -- 7 4 Two--Tone Measurements IMD, INTERMODULATIO -- 8 0 1 10 40

Pout, OUTPUT POWER (WATTS) PEP Figure 33. Intermodulation Distortion Products versus Output Power — 512 MHz

1. The distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 21 30--512 MHz BROADBAND REFERENCE CIRCUIT

Zo =25Ω

f = 512 MHz f=30MHz

f = 512 MHz Zload Zsource

f=30MHz

VDD =50Vdc,IDQ =25mA,Pout =25WCW

f Zsource Zload MHz Ω Ω 30 7.2 - j0.6 15.4 + j8.1 64 8.2 - j1.7 18.1 + j5.4 88 8.9 + j1.9 19.0 + j3.9 98 9.2 + j2.2 19.3 + j3.9 100 9.2 + j2.2 19.4 + j4.0 108 9.4 + j2.4 19.8 + j4.1 144 9.3 + j1.9 19.1 + j2.8 170 9.8 + j2.2 20.0 + j2.6 230 8.9 + j2.1 18.6 + j2.0 352 7.8 + j3.5 19.2 + j2.6 450 7.0 + j3.1 19.2 + j3.5 512 6.7 + j5.0 20.5 + j5.3

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Input Device Output Matching Under Matching Network Test Network 50 Ω 50 Ω

Zsource Zload Figure 34. Broadband Series Equivalent Source and Load Impedance — 30--512 MHz

MRFE6VS25LR5 RF Device Data 22 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS

MRFE6VS25LR5 RF Device Data Freescale Semiconductor, Inc. 23 MRFE6VS25LR5 RF Device Data 24 Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Oct. 2012 • Initial Release of Data Sheet

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MRFE6VS25LR5

Document Number: MRFE6VS25L RF Device Data 26Rev. 0, 10/2012 Freescale Semiconductor, Inc.