Crystal Growth of Eu:Sri2 Single Crystals by Micro-Pulling-Down Method and the Scintillation Properties
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Deformation and Recrystallization of Single Crystal Nickel-Based
Journal of Materials Processing Technology 217 (2015) 1–12 Contents lists available at ScienceDirect Journal of Materials Processing Technology jo urnal homepage: www.elsevier.com/locate/jmatprotec Deformation and recrystallization of single crystal nickel-based superalloys during investment casting a b a,∗ b a Li Zhonglin , Xiong Jichun , Xu Qingyan , Li Jiarong , Liu Baicheng a School of Materials Science and Engineering, Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Tsinghua University, Beijing 100084, China b National Key Laboratory of Advanced High Temperature Structural Materials, Beijing Institute of Aeronautical Materials, Beijing 100095, China a r t i c l e i n f o a b s t r a c t Article history: A semi-quantitative, macroscopic, phenomenon-based, thermo-elastic–plastic model was developed to Received 28 August 2014 predict the final plastic strains of single crystal nickel-based superalloys by considering their orthotropic Received in revised form 21 October 2014 mechanical properties. Various cases were considered and simulated to investigate the basic factors Accepted 23 October 2014 that influence the final plasticity. Thermo-mechanical numerical analysis was conducted to predict the Available online 4 November 2014 recrystallization sites of simplified cored rods, with the results in good agreement with the experimental results. These hollowed rods with thin walls showed an increased propensity for recrystallization. The Keywords: geometric features, especially stress concentration sites, are more significant to the induced plasticity Single crystal Superalloys than the material’s orientation or shell/core materials. This paper also attempts to provide useful sug- gestions, such as introducing filets, to avoid causing plastic strains during the casting process that induce Investment casting Plastic deformation recrystallization. -
Growth and Characterization of Lif Single-Crystal Fibers by the Micro
ARTICLE IN PRESS Journal of Crystal Growth 270 (2004) 121–123 Growth and characterization of LiF single-crystal fibers by the micro-pulling-down method A.M.E. Santoa, B.M. Epelbaumb, S.P. Moratoc, N.D. Vieira Jr.a, S.L. Baldochia,* a Instituto de Pesquisas Energeticas! e Nucleares, IPEN-CNEN/SP, Av. Prof. Lineu Prestes, CEP 05508-900, Sao* Paulo, SP, Brazil b Department of Materials Science, University of Erlangen-Nurnberg, D-91058, Erlangen, Germany c LaserTools Tecnologia Ltda., 05379-130,Sao* Paulo, SP, Brazil Accepted 27 May 2004 Available online 20 July 2004 Communicated by G. Muller. Abstract Good optical quality LiF single-crystalline fibers ranging from 0:5to0:8 mm in diameter and 100 mm in length were successfully grown by the micro-pulling-down technique in the resistive mode. A commercial equipment was modified in order to achieve suitable conditions to grow fluoride single-crystalline fibers. r 2004 Elsevier B.V. All rights reserved. PACS: 81.10.Fq; 78.20.Àe Keywords: A2. Micro-pulling-down method; A2. Single crystal growth; B1. Fluorides 1. Introduction oxide single-crystals have already been grown by the laser heated pedestal growth (LHPG) [2] and There is an increasinginterest in the production by the micro-pulling-down (m-PD) [3] methods. of single-crystalline fibers. Their unique properties However, the growth and hence the possible indicate their use for production of a variety of applications of fluoride single-crystalline fibers optical and electronic devices [1]. The final shape has not yet been investigated. of the single-crystalline fiber is already in a form As it is already known from other methods of suitable for optical testingand applications, fluoride growth, these materials are very sensitive reducingthe time and cost of preparation. -
Single Crystals from Metal Solutions
Single Crystals from Metal Solutions centration of less than about 5 percent (the limit we had established by x-ray diffraction iven a free choice, any solid-state experimentalist would characterize a techniques) would produce some increase, material by making measurements on a single crystal rather than a depending on its concentration. but the in- G polycrystalline sample. A single crystal more accurately represents the crease would be nowhere near that expected material (since it is free of grain boundaries at which impurities can hide) and is in fact if UPt3 itself was a superconductor. (The required for measuring the directional dependence of various properties. Yet growing BCS theory predicts an increase of about 150 a single crystal can be exceptionally difficult, and a large number of important percent.) experiments await the preparation of appropriate single crystals. The whiskers we could gather at the time Numerous techniques exist for growing crystals, but finding one that works for a for the specific heat measurement amounted particular material can be frustrating and time-consuming. A method we use quite to only 20 milligrams, but, fortunately. we often in our research is growth from slowly cooled solutions of the desired materiaI in have developed techniques and equipment for a molten metallic solvent, (This method is an easy extension of the observed natural measuring specific heats of very small sam- growth of single crystals from aqueous solutions.) We have used as solvents such ples. We spent nine days hovering over the metals as aluminum, iridium, tin, copper, bismuth, and gallium, The solvent provides a refrigerator, and by Friday. -
Growth of Srb4o7 Crystal Fibers Along the C-Axis by Micro-Pulling-Down Method
crystals Article Growth of SrB4O7 Crystal Fibers along the c-Axis by Micro-Pulling-Down Method Ryouta Ishibashi, Harutoshi Asakawa * and Ryuichi Komatsu Graduate School of Science and Engineering, Yamaguchi University, Yamaguchi 753-8511, Japan; [email protected] (R.I.); [email protected] (R.K.) * Correspondence: [email protected]; Tel.: +81-836-85-9631 Abstract: SrB4O7 (SBO) receives much attention as solid-state ultraviolet lasers for micro-machining, photochemical synthesis, and laser spectroscopy. For the application of SBO, the SBO crystals require the control of twinning to amplify the conversion light. We also expected that the inhibitation of the SrB2O4 appearance was essential. Here, we show the growth of SBO crystals along the c-axis through the micro-pulling-down method while alternating the application of electric fields (E). Without the application, single crystals were grown. At E = 400 V/cm no needle domains of SrB2O4 inside SBO crystals existed; however, composition planes were formed and twin boundaries did not appear. In contrast, the inversion of surface morphology emerged, and the convex size was especially large at 1000 V/cm. These results demonstrate that convection is generated perpendicular to the growth front by alternating the application of electric fields. This surface morphological change contradicts the conventional concept of growth through the micro-pulling-down method. The distance from seed crystals vs. grain density plot also showed that the density did not decrease with a sufficient slope. Consequently, we concluded that the selection of the c-axis as growth faces is not fruitful to fabricate Citation: Ishibashi, R.; Asakawa, H.; twins, and the selection of the growth condition, under which geometrical selection strongly affects, Komatsu, R. -
Single-Crystal Metal Growth on Amorphous Insulating Substrates
Single-crystal metal growth on amorphous insulating substrates Kai Zhanga,1, Xue Bai Pitnera,1, Rui Yanga, William D. Nixb,2, James D. Plummera, and Jonathan A. Fana,2 aDepartment of Electrical Engineering, Stanford University, Stanford, CA 94305; and bDepartment of Materials Science and Engineering, Stanford University, Stanford, CA 94305 Contributed by William D. Nix, December 1, 2017 (sent for review October 12, 2017; reviewed by Hanchen Huang, David J. Srolovitz, and Carl Thompson) Metal structures on insulators are essential components in advanced Our method is based on liquid phase epitaxy, in which the electronic and nanooptical systems. Their electronic and optical polycrystalline metal structures are encapsulated in an amor- properties are closely tied to their crystal quality, due to the strong phous insulating crucible, together with polycrystalline seed dependence of carrier transport and band structure on defects and structures of differing material, and heated to the liquid phase. grain boundaries. Here we report a method for creating patterned As the system cools, the metal solidifies into single crystals. single-crystal metal microstructures on amorphous insulating sub- Liquid phase epitaxy has been previously studied in the context of strates, using liquid phase epitaxy. In this process, the patterned semiconductor-on-oxide growth (24–26), but has not been ex- metal microstructures are encapsulated in an insulating crucible, plored for metal growth. We will examine gold as a model system together with a small seed of a differing material. The system is in this study. Gold is an essential material in electronics and heated to temperatures above the metal melting point, followed by plasmonics because of its high conductivity and chemical inertness. -
3 Single Crystals Using Czochralski Method
Journal of Siberian Federal University. Engineering & Technologies 4 (2009 2) 400-408 ~ ~ ~ УДК 669:621.315.592 Synthesis of Ca4GdO(BO3)3 Single Crystals using Czochralski Method Robert Möckel*, Margitta Hengst, Christoph Reuther and Jens Götze TU Bergakademie Freiberg, Institute of Mineralogy, Brennhausgasse 14, D-09596 Freiberg, Germany 1 Received 16.11.2009, received in revised form 03.12.2009, accepted 18.12.2009 The oxoborate Ca4GdO(BO3)3 (GdCOB) is a potential material for advanced industrial applications because of its optical and electric properties. High quality single crystals of GdCOB have been grown from a melt using the Czochralski method. Single crystals of laboratory scale are of good optical quality showing no macroscopic defects like cracks, inclusions or discolouration. Crystals in [001] direction reveal regular growth, whereas crystals in [010] are of asymmetric shape but show less difficulties during the growth process. Keywords: single crystal growth, Czochralski, oxoborate, Ca4GdO(BO3)3. 1. Introduction First investigations on the system REE2O3–CaO–B2O3 go back to the late 1960s, early 1970s, when Kindermann took care of the whole system [1]. Most of these early syntheses were realized by solid state reactions. Later, Ca4REEO(BO3)3 (REECOB) was synthesized and described by Norrestam & Nygren [2], who produced the materials by simple solid state reactions of stoichiometric mixtures as well. They showed that most trivalent REE like La, Nd, Sm, Gd, Er, and Y fit into the crystal lattice crystallizing isostructurally. First analysis of the crystallographic structures revealed analogies to calcium fluoroborate (Ca5F(BO3)3) and also to well known structure of common fluorapatite (Ca5[F/(PO4)3]). -
Single Crystal Growth for Topology and Beyond Chandra Shekhar#, Horst Borrmann, Claudia Felser, Guido Kreiner, Kaustuv Manna, Marcus Schmidt, and Vicky Sü
CHEMICAL METALS SCIENCE & SOLID STATE CHEMISTRY Single crystal growth for topology and beyond Chandra Shekhar#, Horst Borrmann, Claudia Felser, Guido Kreiner, Kaustuv Manna, Marcus Schmidt, and Vicky Sü Single crystals are the pillars for many technological advancements, which begin with acquiring the material. Since different compounds have different physical and chemical properties, different techniques are needed to obtain their single crystals. New classes of quantum materials, from insulators to semimetals, that exhibit non-trivial topologies, have been found. They display a plethora of novel phenomena, including topological surface states, new fermions such as Weyl, Dirac, or Majorana, and non-collinear spin textures such as antiskyrmions. To obtain the crystals and explore the properties of these families of compounds, it is necessary to employ different crystal growth techniques such as the chemical vapour transport method, Bridgman technique, flux growth method, and floating-zone method. For the last four years, we have grown more than 150 compounds in single crystal form by employing these methods. We sometimes go beyond these techniques if the phase diagram of a particular material allows it; e.g., we choose the Bridgman technique as a flux growth method. Before measuring the properties, we fully characterize the grown crystals using different characterization tools. Our TaAs family of crystals have, for the first time, been proven experimentally to exhibit Weyl semimetal properties. They exhibit extremely high magnetoresistance and mobility of charge carriers, which is indicative of the Weyl fermion properties. Moreover, a very large value of intrinsic anomalous Hall and Weyl physics with broken time-reversal symmetry is found in the full-Heuslers, while the half-Heuslers exhibit topological surface states. -
Project Title: Embedded Nanocrystal Silicon Films: a New Paradigm for Improving the Stability of Thin-Film Silicon
Suite 1000 ME 111 Church St. SE Minneapolis, MN 55455-0111 Project Title: Embedded Nanocrystal Silicon Films: A New Paradigm for Improving the Stability of Thin-film Silicon Contract Number: RD-3-25 Report Date: 16 Dec 2011 Principal Investigator: Uwe Kortshagen Contract Contact: Amy Rollinger 612-625-4028 612-625-1359 Congressional District: (Corporate office) Minnesota 5th Congressional District: (Project location) Minnesota 5th FINAL REPORT Executive Summary: Under this grant, we pursued two different routes that may help increase the efficiency and lower the cost of thin film silicon solar cells. Our first approach (Track 1) is based on our unique ability to produce silicon nanocrystals in a low-pressure plasma-based synthesis reactor and to embed these nanocrystals in amorphous silicon films. Our novel deposition process enables us to independently control the properties of the amorphous matrix and of the crystalline phase, which we hope will enable us to improve the electronic quality of amorphous silicon that is used in thin film solar cells. In the second approach (Track 2), we study using such embedded nanocrystals as nuclei for seed-induced re-crystallization of amorphous silicon films. We expected that controlling the seed concentration will enable us to grow microcrystalline Si films faster and with grain sizes larger than possible with other deposition approaches. This may enable the cheaper production of solar cells based on microcrystalline silicon. The goals and objectives of this grant were achieved. This research led to two major conclusions: 1. The inclusion of Si nanocrystals into amorphous silicon leads to a mixed phase material that is more resistive to light-induced defect creation than standard amorphous silicon. -
Solid-Phase Epitaxy
Published in Handbook of Crystal Growth, 2nd edition, Volume III, Part A. Thin Films and Epitaxy: Basic Techniques edited by T.F. Kuech (Elsevier North-Holland, Boston, 2015) Print book ISBN: 978-0-444-63304-0; e-book ISBN: 97800444633057 7 Solid-Phase Epitaxy Brett C. Johnson1, Jeffrey C. McCallum1, Michael J. Aziz2 1 SCHOOL OF PHYSICS, UNIVERSITY OF MELBOURNE, VICTORIA, AUSTRALIA; 2 HARVARD SCHOOL OF ENGINEERING AND APPLIED SCIENCES, CAMBRIDGE, MA, USA CHAPTER OUTLINE 7.1 Introduction and Background.................................................................................................... 318 7.2 Experimental Methods ............................................................................................................... 319 7.2.1 Sample Preparation........................................................................................................... 319 7.2.1.1 Heating.................................................................................................................... 321 7.2.2 Characterization Methods................................................................................................ 321 7.2.2.1 Time-Resolved Reflectivity........................................................................................ 321 7.2.2.2 Other Techniques ....................................................................................................323 7.3 Solid-Phase Epitaxy in Si and Ge .............................................................................................. 323 7.3.1 Structure -
Growth of Piezoelectric Crystals by Czochralski Method D
Growth of piezoelectric crystals by Czochralski method D. Cochet-Muchy To cite this version: D. Cochet-Muchy. Growth of piezoelectric crystals by Czochralski method. Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C2), pp.C2-33-C2-45. 10.1051/jp4:1994205. jpa-00252473 HAL Id: jpa-00252473 https://hal.archives-ouvertes.fr/jpa-00252473 Submitted on 1 Jan 1994 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE IV Colloque C2, supplBment au JournaI de Physique 111, Volume 4, fkvrier 1994 Growth of piezoelectric crystals by Czochralski method D. COCHET-MUCHY Crismatec, Usine de Gikres, 2 me des Essarts, 386610 Gi.?res, France Abstract : The Czochralski method is one of the most widely used industrial technique to grow single-crystals, since it applies to a very large range of compounds, such as semiconductors, oxides, fluorides, etc... Many exhibit piezoelectric properties and some of them find applications in Surface-Acoustic-Waves or Bulk- Acoustic-Waves devices. That explains the large amount of work made on the development of the corresponding growth processes and the high levels of production achieved in the world today. -
Melt Mixing and Crystallization Under Theistareykir, Northeast Iceland
Article Geochemistry 3 Volume 4, Number 11 Geophysics 15 November 2003 8624, doi:10.1029/2003GC000558 GeosystemsG G ISSN: 1525-2027 AN ELECTRONIC JOURNAL OF THE EARTH SCIENCES Published by AGU and the Geochemical Society Melt mixing and crystallization under Theistareykir, northeast Iceland J. Maclennan Bullard Laboratories, Department of Earth Sciences, Madingley Road, Cambridge, CB3 0EZ, UK Now at Laboratoire de Ge´osciences Marines, Institut de Physique du Globe de Paris, France ([email protected]) D. McKenzie Bullard Laboratories, Department of Earth Sciences, Madingley Road, Cambridge, CB3 0EZ, UK ([email protected]) K. Gro¨nvold Nordic Volcanological Institute, Reykjavik, Iceland ([email protected]) N. Shimizu Department of Geology and Geophysics, Woods Hole Oceanographic Institution, Woods Hole, Massachusetts 02543, USA ([email protected]) J. M. Eiler and N. Kitchen Division of Geological and Planetary Sciences, California Institute of Technology, Pasadena, California 91125, USA ([email protected]) [1] Analysis of the compositions of crystals and melt inclusions from a suite of 40 gabbroic and wehrlitic nodules in a single eruptive body provides a record of concurrent mixing and crystallization of melts under NE Iceland. The crystals in the nodules have a similar range of compositions to those found as phenocrysts in the flow, and many of the nodules may have been generated by crystallization of a magma with a similar composition to that of the host flow. While plagioclase is only present in nodules where the average forsterite content of olivines is <Fo88.5, clinopyroxene is found in nodules with average olivine forsterite contents of up to Fo91.6. -
Quinquephenyl Crystals on a Cu(110)-(21)O Surface
crystals Article Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface Roland Resel 1,* , Markus Koini 1, Jiri Novak 2 , Steven Berkebile 3, Georg Koller 3 and Michael Ramsey 2,* 1 Institut für Festkörperphysik, Technische Universität Graz, Petersgasse 16, 8010 Graz, Austria 2 Department of Condensed Matter Physics, Masaryk University, 611 37 Brno, Czech Republic 3 Institut für Physik, Karl-Franzens Universität Graz, Universitätsplatz 5, 8010 Graz, Austria * Correspondence: [email protected] (R.R.); [email protected] (M.R.) Received: 14 June 2019; Accepted: 16 July 2019; Published: 22 July 2019 Abstract: A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2 1)O single crystal surface. The thin film morphology was studied by light microscopy × and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.