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The Hall Effect and Its .Applications the Hall Effect and Its .Applications The Hall Effect and Its .Applications The Hall Effect and Its .Applications Edited by C.L.Chien and C. R .Westgate The Johns Hopkins University Baltimore, Maryland Springer Science+Business Media, LLC Library of Congress Cataloging in Publication Data Symposium on Hali Effect and lts Applications, Johns Hopkins University, 1979. The Hali effcct and its applica tions. Inc1udcs index. 1. Hali cffect-Congresses. 1. Chien, Chia Ling. II. Westgate, C.R. III. Title. QC612.H3S97 1979 537.6'22 80-18566 ISBN 978-1-4757-1369-5 ISBN 978-1-4757-1367-1 (eBook) DOI 10.1007/978-1-4757-1367-1 Proceedings of the Commemorative Symposium on the Hali Effect and its Applications, held at The Johns Hopkins University, Baltimore, Maryland, November 13, 1979. © 1980 Springer Science+Business Media New York Origina11y published by Plenum Press, New York in 1980 Ali righ ts reserved No part of this book may be reproduced, stored in a retrieval system, or transmitted, in any [orm or by any means, electronic, mechanical, photocopying, microfilming, recording, Of otherwise, without written permission from the Publisher PREFACE In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins University, Edwin Herbert Hall discovered what is now universally known as the Hall effect. A symposium was held at The Johns Hopkins University on November 13, 1979 to commemorate the lOOth anniversary of the discovery. Over 170 participants attended the symposium which included eleven in­ vited lectures and three speeches during the luncheon. During the past one hundred years, we have witnessed ever ex­ panding activities in the field of the Hall effect. The Hall effect is now an indispensable tool in the studies of many branches of condensed matter physics, especially in metals, semiconductors, and magnetic solids. Various components (over 200 million!) that utilize the Hall effect have been successfully incorporated into such devices as keyboards, automobile ignitions, gaussmeters, and satellites. This volume attempts to capture the important aspects of the Hall effect and its applications. It includes the papers presented at the symposium and eleven other invited papers. Detailed coverage of the Hall effect in amorphous and crystalline metals and alloys, in magnetic materials, in liquid metals, and in semiconductors is provided. Applications of the Hall effect in space technology and in studies of the aurora enrich the discussions of the Hall effect's utility in sensors and switches. The design and packaging of Hall elements in integrated circuit forms are illustrated. Some histori­ cal notes, most notably portions of the hitherto unpublished note­ book of E. H. Hall, provide the background and the course of the discovery. This commemorative symposium was jointly sponsored by The Johns Hopkins University and the Micro Switch Division of Honeywell. We are indebted to members of the organizing committee, numerous col­ leagues from Johns Hopkins and Honeywell for their suggestions, assistance and cooperation. We would also like to thank E. M. Pugh of Carnegie-Mellon University, H. H. Hall of the University of New Hampshire and S. J. Nelson of Honeywell, Inc. for their illuminating speeches during the luncheon; C. Hurd of the National Research Coun- v vi PREFACE cil of Canada, L. Berger of Carnegie-Mellon University and R. O'Hand­ ley of the IBM Yorktown Heights Research Center for their helpful suggestions; and F. Kafka of Micro Switch for his inexhaustible assistance. Special thanks are due to Mrs. E. Carroll for her meticulous typing and retyping of the manuscripts of this volume. Finally, to all the lecturers, chairmen, contributors and parti­ cipants, many thanks. C. L. Chien and C. R. Westgate CONTRIBUTORS C. J. Adkins Cavendish Laboratories Cambridge R. S. Allgaier Naval Surface Weapons Center L. E. Ballentine Department of Physics Simon Fraser University A. C. Beer Battelle Columbus Laboratories L. Berger Department of Physics Carnegie-Mellon University G. Bergmann Institut fur Festkorperforschung Kernforschungsanlage, Julich R. V. Coleman Department of Physics University of Virginia D. Emin Sandia National Laboratories A. Fert Laboratoire de Physique des Solids Universite Paris-Sud, Orsay R. J. Gambino IBM Thomas J. Watson Research Center M. L. Geske Solid State Electronics Center Honeywell H. J. Guntherodt Institut fur Physik Universitat Basel A. Hamzic Institute of Physics of the University Zagreb 0. Hannaway History of Science Department The Johns Hopkins University vii viii CONTRIBUTORS C. M. Hurd Division of Chemistry National Research Council of Canada B. R. Judd Department of Physics The Johns Hopkins University R. W. Klaffky Department of Physics University of Virginia H. U. Kiinzi Institut fur Physik Universitat Basel D. Long Honeywell Corporate Material Sciences Center W. H. Lowrey Department of Physics University of Virginia J. T. Maupin 11icro Switch Division Honeywell T. R. McGuire IBM Thomas J. Watson Research Center F. F. Mobley Applied Physics Laboratories The Johns Hopkins University P. Nagels Materials Science Department S. C. K./C. E. N. R. C. O'Handley IBM Thomas J. Watson Research Center T. A. Potemra Applied Physics Laboratories The Johns Hopkins University L. G. Rubin Francis Bitter National Magnet Laboratory M.I.T. H. H. Sample Department of Physics Tufts University K. R. Sopka Harvard University 0. N. Tufte Honeywell Corporate Material Sciences Center E. A. Vorthmann Micro Switch Division Honeywell CONTENTS "Pressing Electricity": A Hundred Years of Hall Effect Effect in Crystalline Metals and Alloys . • . 1 Colin M. Hurd The Hall Effect of Ferromagnets 55 L. Berger, G. Bergmann Hall Effect from Skew Scattering by Magnetic Impurities . 77 A. Fert, A. Hamzic Hall Effect in Single Crystals of Iron . 99 R. V. Coleman, R. W. Klaftky, W. H. Lowrey Hall Effect in Amorphous Metals . 137 T. R. McGuire, R. J. Gambino, R. c. O' Handley The Hall Effect in Liquid Metals. 201 L. E. Ballentine Hall Effect in Liquid Metals: Experimental Results 215 H. u. Kunzi, H.-J. GUntherodt Experimental Hall Effect Data for a Small-Polaron Semiconductor . • . • 253 P. Nagels The Hall Effect in Hopping Conduction • . 281 David Emin Hall Effect and the Beauty and Challenges of Science 299 A. C. Beer The Hall Effect in Heavily Doped Semiconductors . • 339 Donald Long, 0. N. Tufte Electron Correlation and Activated Hall Mobility 355 c. J. Adkins ix X CONTENTS Some General Input-output Rules Governing Hall Coefficient Behavior. ...• 375 R. s. Allgaier Hall Currents in the Aurora . • . • . • • . • • . • • 399 T. A. Potemra Hall Effect Formulae and Units 417 R. C. O'Handley The Hall Effect in Silicon Circuits 421 J. T. Maupin, M. L. Geske Packaging Hall Effect Devices 447 Everett A. Vorthmann Hall Effect Magnetometers for High Magnetic Fields and Temperatures between 1.5 K and 300 K ..••.. 463 L. G. Rubin, H. H. Sample Applications of Hall Effect Devices in Space Technology . • . • . 481 Frederick F. Mobley E. H. Hall and Physics at Hopkins: The Background to Discovery . • . • . • . • . • 509 0. Hannaway The Hall Effect in the Context of Nineteenth- Century Physics 517 B. R. Judd The Discovery of the Hall Effect: Edwin Hall's Hitherto Unpublished Account . 523 Katherine Russell Sopka SUBJECT INDEX . 547 .
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