Cypress Semiconductor Corporation, 198 Champion Court, San Jose, CA 95134. Tel: (408) 943-2600

PRODUCT CHANGE NOTIFICATION

PCN: PCN173903A Date: February 12, 2018

Subject: Addendum to PCN 173903: Qualification of ’ DMOS 6 as an Additional Wafer Fab Site, Cypress’s Test 25 as an Additional Wafer Sort Site, and Copper- Palladium Wire for Select 512kb/1Mb Serial F-RAM Industrial-Grade Products

To: FUTURE ELECTRONICS FUTURE ELE [email protected]

Change Type: Major

Description of Change: The purpose of this addendum is to add parts on the affected parts list that were not included in PCN173903. The added part numbers can be identified in the affected parts list in column D.

Cypress announces the qualification of TI’s DMOS 6 as an additional wafer fab site and Cypress’s Test 25 as an additional wafer sort site for select 512kb/1Mb serial industrial-grade F- RAM products. Cypress also announces the qualification of Copper-Palladium (CuPd) wire bond for the 8-Lead SOIC package for select 512kb/1Mb serial industrial-grade F-RAM products at United Test and Assembly Center Co., Ltd. (UTAC), , using the Bill of Materials shown below:

Material Au Wire CuPd Wire Mold Compound Sumitomo G600 Sumitomo G600 Lead Finish Matte Sn Matte Sn Die Attach Epoxy Henkel 8200T Henkel 8200T Wire Diameter 0.8 mil 0.8 mil Bond Wire Au CuPd

Benefit of Change: Qualification of alternate sites is part of the ongoing flexible manufacturing initiative announced by Cypress. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions.

All three of these changes must be qualified simultaneously in order to ensure continuity of supply given the tight capacity situation. DMOS 6, Test 25, and CuPd wires are already being used to fabricate, sort and assemble other FRAM products in densities ranging from 4kb to 2Mb; the assembly site remains UTAC.

Document No. 001-53357 Rev. *F Page 1 of 2

Part Numbers Affected: 6 See the attached ‘Affected Parts List’ file for a list of all part numbers affected by this change. Note that any new parts that are introduced after the publication of this PCN will include all changes outlined in this PCN.

Qualification Status: The additional wafer fab and wafer sort sites have been qualified through a series of tests documented in Qualification Test Plans (QTP) # 163901 and QTP# 170503. The 8-lead SOIC package with CuPd wire has been qualified through a series of tests documented in QTP # 140502. These qualification reports can be found as attachments to this PCN or by visiting www.cypress.com and typing the QTP number in the keyword search window.

Sample Status: Please review the attached ‘Affected Parts List’ file for a list of affected part numbers with their associated DMOS 6 and CuPd wire sample ordering part numbers. If you require qualification samples, please contact your local Cypress sales representative as soon as possible, and no later than 30 days from the date of this PCN, to place your order.

Approximate Implementation Date: Note that the original part numbers in PCN173903 may already be fabricated at DMOS6, sorted at Test 25 or transitioned to CuPd wire. Effective 90 days from the date of this notification or upon customer approval, whichever comes first, all shipments of the added part numbers (tagged with 173903A) in the attached file will be supplied from DMOS6 or other approved wafer fabrication sites, will be sort tested at Test 25 or other approved wafer sort sites, and will transition to CuPd wire.

Anticipated Impact: Products fabricated at DMOS6, sorted at Test 25 and assembled with CuPd wire are completely compatible with the existing product from a form, fit, functional, parametric and quality performance perspectives.

Method of Identification: Cypress maintains traceability of product to wafer level, including wafer fabrication location, through the lot number marked on the package and through a revision letter on the die.

Response Required: No response is required.

For additional information regarding this change, contact your local sales representative or contact the PCN Administrator at [email protected].

Sincerely,

Cypress PCN Administration

Document No. 001-53357 Rev. *F Page 2 of 2 Item Marketing Part Number Sample Order Part Number Included In 1 FM25V05-G FM25V057-G PCN173903 2 FM25V05-GTR FM25V057-G PCN173903A 3 FM25V10-G FM25V107-G PCN173903 4 FM25V10-GTR FM25V107-G PCN173903A 5 FM25VN10-G FM25VN107-G PCN173903 6 FM25VN10-GTR FM25VN107-G PCN173903A Document No. 001-93909 Rev. *A ECN #: 4503612

Cypress Semiconductor Package Qualification Report

QTP# 140502 VERSION *A September, 2014

SOIC 8L (208mils)

CuPd Wire

MSL3, 260C Reflow

UTAC, Thailand (UT)

FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE

Prepared By: Reviewed By: Becky Thomas Rene Rodgers Reliability Engineer Reliability Manager

Approved By: Richard Oshiro Reliability Director

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 7 Document No. 001-93909 Rev. *A ECN #: 4503612

PACKAGE/PRODUCT QUALIFICATION HISTORY

QTP Description of Qualification Purpose Date Number Qualification of the SOIC 8L (208mil) package at UTAC Thailand Limited (UTL), using 0.8mil CuPd bond wire, G600 140502 Aug 2014 mold compound, 8200T die attach, with matte Sn lead finish, at MSL3 and 260C reflow temperature.

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 7 Document No. 001-93909 Rev. *A ECN #: 4503612

MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION

Package Designation: SZ820 Package Outline, Type, or Name: SOIC 8L (208mils) Mold Compound Name/Manufacturer: G600 / Sumitomo Mold Compound Flammability Rating: UL 94 V=0 pass Mold Compound Alpha Emission Rate: <0.1 Oxygen Rating Index: >28% 56% Lead Frame Designation: FMP Lead Frame Material: Copper Substrate Material: N/A Lead Finish, Composition / Thickness: Matte Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Henkel Die Attach Material: 8200T Bond Diagram Designation 001-86136 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8 mil Thermal Resistance Theta JA C/W: 118 C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 001-85398M Name/Location of Assembly (prime) facility: UTAC, Thailand (UT) MSL LEVEL 3 REFLOW PROFILE 260C

ELECTRICAL TEST / FINISH DESCRIPTION

Test Location: UTAC, Thailand (UT)

Note: Please contact a Cypress Representative for other package availability.

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RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS

Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc = 3.60V, 125 C P Latent Failure Rate JESD22-A108 High Accelerated Saturation Test JEDEC STD 22-A110: 130C, 85%RH, 3.60V P (HAST) Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs., 30 C, 60% RH) Pressure Cooker Test JESD22-A102: 121 C, 100%RH, 15 PSIG P Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs., 30 C, 60% RH) Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65 C to P 150 C Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs., 30 C, 60% RH) High Temp Storage JESD22-A103: 150 C, no bias P Ball Shear JESD22-B116A P Cpk : 1.33, Ppk : 1.66 Acoustic Microscopy J-STD-020 P Precondition: JESD22 Moisture Sensitivity Level 3 (168 Hrs, 30 C, 60% RH) Bond Pull MIL-STD-883 – Method 2011, P Cpk : 1.33, Ppk : 1.66 Constructional Analysis Criteria: Meet external and internal characteristics of P Cypress package Internal Visual MIL-STD-883-2014 P Final Visual Inspection JESD22-B101B P

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Reliability Test Data QTP #: 140502

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: ACOUSTIC MICROSCOPY / before and after MSL3 Preconditioning

FM25V20A-G 4346426 611410018 UTAC - UT N/A 50 0

FM25V20A-G 4346426 611410540 UTAC - UT N/A 50 0

FM25V20A-G 4346426 611346962 UTAC - UT N/A 15 0

STRESS: BALL SHEAR

FM25V20A-G 4346426 611346960 UTAC - UT N/A 10 0

FM25V20A-G 4346426 611346961 UTAC - UT N/A 10 0

FM25V20A-G 4346426 611346962 UTAC - UT N/A 10 0

STRESS: BOND PULL

FM25V20A-G 4346426 611346960 UTAC - UT N/A 10 0

FM25V20A-G 4346426 611346961 UTAC - UT N/A 10 0

FM25V20A-G 4346426 611346962 UTAC - UT N/A 10 0

STRESS: CONSTRUCTIONAL ANALYSIS

FM25V20A-G 4346426 611346960 UTAC - UT N/A 5 0

FM25V20A-G 4346426 611346961 UTAC - UT N/A 5 0

FM25V20A-G 4346426 611346962 UTAC - UT N/A 5 0

STRESS: FINAL VISUALINSPECTION

FM25V20A-G 4346426 611346960 UTAC - UT N/A 485 0

FM25V20A-G 4346426 611346961 UTAC - UT N/A 480 0

FM25V20A-G 4346426 611346962 UTAC - UT N/A 803 0

STRESS: HIGH ACCELERATED SATURATION TEST (HAST), 130C, 85%RH, 3.60V, with MSL3 Preconditioning FM25V20A-G 4351641 611406873 UTAC - UT 96 25 0

FM25V20A-G 4351641 611406872 UTAC - UT 96 24 0

FM25V20A-G 4351641 611406871 UTAC - UT 96 25 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 7 Document No. 001-93909 Rev. *A ECN #: 4503612

Reliability Test Data QTP #: 140502

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: HIGH TEMPERATURE OPERATING LIFE- LATENT FAILURE RATE, Vcc = 3.60V, at 125 C FM25V20A-G 4346426 611346960 UTAC - UT 168 116 0

FM25V20A-G 4346426 611346960 UTAC - UT 1000 116 0

STRESS: HIGH TEMPERATURE STORAGE, 150 C

FM25V20A-PG 4346426 611346958 UTAC - UT 1000 77 0

FM25V20A-PG 4346426 611346957 UTAC - UT 1000 77 0

FM25V20A-PG 4346426 611346956 UTAC - UT 1000 77 0

STRESS: INTERNAL VISUAL

FM25V20A-G 4346426 611346960 UTAC - UT N/A 5 0

FM25V20A-G 4346426 611346961 UTAC - UT N/A 5 0

FM25V20A-G 4346426 611346962 UTAC - UT N/A 5 0

STRESS: PRESSURE COOKER TEST, at 121 C, 100%RH, 15 PSIG, with MSL3 Preconditioning

FM25V20A-G 4351641 611406873 UTAC - UT 168 77 0

FM25V20A-G 4351641 611406872 UTAC - UT 168 77 0

FM25V20A-G 4351641 611406871 UTAC - UT 168 77 0

STRESS: TEMPERATURE CYCLE TEST, Condition C, -65 C to 150 C, with MSL3 Preconditioning

FM25V20A-G 4346426 611346960 UTAC - UT 500 77 0

FM25V20A-G 4346426 611346961 UTAC - UT 500 77 0

FM25V20A-G 4346426 611346962 UTAC - UT 500 77 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 7 Document No. 001-93909 Rev. *A ECN #: 4503612

Document History Page

Document Title: QTP #140502: QUALIFICATION OF THE SOIC 8L (208MIL) PACKAGE AT UTL, USING 0.8MIL CUPD BOND WIRE, G600, 8200T, WITH MATTE SN, AT MSL3 AND 260C Document Number: 001-93909

Rev. ECN Orig. of Description of Change No. Change ** 4481318 BECK Initial Release *A 4503612 BECK Changed SOIJ to SOIC

Distribution: WEB

Posting: None

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 7 Document No. 002-18687 Rev. *D ECN #: 5767156

Cypress Semiconductor Sort Site Qualification Report

QTP#170503 VERSION *D June 2017

Cypress Test 25, Austin, Texas Sort Site Qualification for F-RAM Devices

F-RAM Devices

FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE

Prepared By: Reviewed By: Su Zheng Yusaku Ohta Reliability Engineer Reliability Manager

Approved By: David Hoffman Reliability Director

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 6 Document No. 002-18687 Rev. *D ECN #: 5767156

PACKAGE/PRODUCT QUALIFICATION HISTORY

QTP Description of Qualification Purpose Date Number Cypress Test 25, Austin, Texas Sort Site Qualification for F- February 170503 RAM Device 2017

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QUALIFICATION COVERAGE RANGE

MARKETING PART NUMBER PACKAGE FM16* 8L-SOIC FM18* 8L-SOIC / 8L-PDIP FM21* 44L-TSOP FM22* 44L-TSOP / 48L-BGA FM24* 8L-SOIC / 8L-DFN FM25* 8L-SOIC / 8L-DFN / 8L-PDIP FM28* 8L-SOIC / 28L-TSOP/ 32L-TSOP FM31* 14L-SOIC FM33* 14L-SOIC CY15* 8L-SOIC / 8L-DFN / 8L-PDIP

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Reliability Test Data QTP #: 170503

Device Fab Lot# Assy Lot# Test- Loc Yield

SORT TEST: CORRELATION

Sort 1 Yield TR20011ACY 2539013 W5, W9, W12 N/A KYEC-TEST25 Correlated

Sort 2 Yield TR20011ACY 2539013 W5, W9, W12 N/A KYEC-TEST25 Correlated

Sort 1 Bin Movement TR20011ACY 2603007 W9 N/A KYEC-TEST25 0.47% Passed TR20011ACY 2539013 W9 N/A KYEC-TEST25 0.35% Passed

Sort 2 Bin Movement TR20011ACY 2603007 W9 N/A KYEC-TEST25 0.92% Passed TR20011ACY 2539013 W9 N/A KYEC-TEST25 0.52% Passed

Fishers Exact TR20011ACY 2539013 W5, W9, W12 N/A KYEC-TEST25 > 0.05

Bin Split Yield TR20011ACY 3646046 W5, W9, W12 N/A KYEC-TEST25 Passed

Site to Site Verification TR20011ACY 3646046 N/A KYEC-TEST25 Passed

See below for an explanation of the terms used above.

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Sort is the process of electrically testing the die on a wafer after fabrication is complete. Sort test flows vary by product and technology. Sort can be a single test step, or include multiple test steps at different temperatures, data bake, UV erase or other steps.

Sort 1 is the first sort test insertion, Sort 2 is the second sort test insertion, etc. Sort 1 and Sort 2 will typically be done at different temperatures and possibly with different test parameters. Both sort steps use the same reference wafer-map and the rejected die from Sort 1 are not subject to Sort 2. The quantity-out of Sort 1 is the quantity-in for Sort 2.

Yield is the ratio of good/working die on a wafer to the total number of die on a wafer.

Sort 1 Yield and Sort 2 Yield refer to the percent of die on a processed wafer that pass all functional and technical requirements necessary for customer shipment during Sort 1 and Sort 2. Sort yield comparison between repeated sort insertions for the same wafer are considered correlated if die get binned into the same bins consistently.

Binning allows die to be put into different groups depending on their test results. Each die is assigned a bin based on its performance or failure mode.

Bin Movement measures the percentage of die which are put into different bins between repeated sort insertions (i.e. Sort 1 to a repeated Sort 1). Bin movement <2% is required for passing qualification to ensure consistency in sort results.

Fishers Exact test is a statistical test used to compare proportions of two nominal variables, to check if they are statistically significant. Sort Yield Comparison using Fisher Exact Test should meet F value >=0.05.

Site to Site Verification insures consistent results across all test sites for products which include multiple die tested simultaneously. In this context, “test site” refers to one of the die which are tested simultaneously during a single touch down.

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Document History Page

Document Title: QTP#170503: CYPRESS TEST 25, AUSTIN, TEXAS SORT SITE QUALIFICATION F-RAM DEVICES Document Number: 002-18687 Rev. ECN Orig. of Description of Change No. Change ** 5624001 SUZH Initial Release. *A 5633500 SUZH Updated the parts list. *B 5723685 HSTO Updated Cypress logo Updated the parts list *C 5747295 EKNG Updated additional Qualification data *D 5767156 EKNG Updated Sort 1 and 2 Bin Movement Value SANC Added definition of technical terms

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 6 Document No. 002-20308 Rev. ** ECN #: 5798699

Cypress Semiconductor Product Qualification Report

QTP# 163901 VERSION ** July 2017

FM20H08 Device Family 130nm Technology, TI 300mm Wafer Fab DMOS6

FM25V05-G* 512-KBIT (64 K X 8) SERIAL (SPI) F-RAM

FM25V10-G* 1-MBIT (128K X 8) SERIAL (SPI) F-RAM

FM25VN10-G* 1-MBIT (128K X 8) UNIQUE SERIAL (SPI) F-RAM

FM25V05-PGC 512-KBIT (64 K X 8) SERIAL (SPI) F-RAM

FM25V10-PG 1-MBIT (128K X 8) SERIAL (SPI) F-RAM

FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE

Prepared By: Reviewed By: Josephine Pineda (JYF) Yusaku Ohta (YUOH) Staff Reliability Engineer Reliability Manager

Approved By: David Hoffman (DHH) Reliability Director

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

PRODUCT QUALIFICATION HISTORY

QTP Description of Qualification Purpose Date Number TI F-RAM 130nm DMOS5 (200mm Wafer Fab) to DMOS6 143905 (300mm Wafer Fab) Foundry Transfer using the TR20005B January 2017 (2Mb Industrial 2T2C F-RAM Product) TI F-RAM 130nm DMOS5 (200mm Wafer Fab) to DMOS6 163901 (300mm Wafer Fab) Foundry Transfer using FM20H08 July 2017 (1Mbit / 512Kbit Industrial F-RAM Product)

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PRODUCT DESCRIPTION (for qualification) Qualification Purpose: TI F-RAM 130nm DMOS5 (200mm Wafer Fab) to DMOS6 (300mm Wafer Fab) Foundry Transfer using FM20H08 (1Mbit / 512Kbit Industrial F-RAM Product) Marketing Part #: FM25V05-G*/ FM25V10-G*/ FM25VN10-G*/ FM25V05-PGC*/ FM25V10-PG* Device Description: 512-KBIT (64 K X 8) SERIAL (SPI) F-RAM 1-MBIT (128K X 8) SERIAL (SPI) F-RAM/ 1-MBIT (128K X 8) UNIQUE SERIAL (SPI) F-RAM Cypress Division: Cypress Semiconductor Corporation – Memory Products Division (MPD)

TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: Proprietary* Metal Composition: Proprietary* Passivation Type and Thickness: Proprietary* Generic Process Technology/Design Rule (μ-drawn): 130nm Gate Oxide Material/Thickness (MOS): Proprietary* Name/Location of Die Fab (prime) Facility: Texas Instruments / Dallas Die Fab Line ID/Wafer Process ID: DMOS 6 / E035.1

*Texas Instruments’ proprietary information is available with signed NDA.

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MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION

Package Designation: SW815, SZ815 Package Outline, Type, or Name: 8L SOIC Mold Compound Name/Manufacturer: G600 / Sumitomo Mold Compound Flammability Rating: UL-94 V-0 Mold Compound Alpha Emission Rate: <0.1 Oxygen Rating Index: >28% 37% Lead Frame Designation: FMP Lead Frame Material: Copper Lead Finish, Composition / Thickness: Matte Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Laser Groove + Wafer Saw Die Attach Supplier: Henkel Die Attach Material: 8200T Bond Diagram Designation 001-86116/001-86117/001-86094 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8 mil Thermal Resistance Theta JA C/W: 59C/W Package Cross Section Yes/No: No Assembly Process Flow: 002-20375 Name/Location of Assembly (prime) facility: UTAC, Thailand (UT) MSL Level MSL3 Reflow Profile 260C

ELECTRICAL TEST / FINISH DESCRIPTION

Test Location: UTAC, Thailand

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MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION

Package Designation: PZ083 Package Outline, Type, or Name: 8L PDIP Mold Compound Name/Manufacturer: G600 / Sumitomo Mold Compound Flammability Rating: UL-94 V-0 Mold Compound Alpha Emission Rate: <0.1 Oxygen Rating Index: >28% 37% Lead Frame Designation: FMP Lead Frame Material: Copper Lead Finish, Composition / Thickness: Matte Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Laser Groove + Wafer Saw Die Attach Supplier: Henkel Die Attach Material: 8200T Bond Diagram Designation 002-15911 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8 mil Thermal Resistance Theta JA C/W: 75C/W Package Cross Section Yes/No: No Assembly Process Flow: 001-94052 Name/Location of Assembly (prime) facility: UTAC, Thailand (UT) MSL Level N/A Reflow Profile N/A

ELECTRICAL TEST / FINISH DESCRIPTION

Test Location: UTAC, Thailand

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RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS

Stress/Test Test Condition (Temp/Bias) Result P/F J-STD-020 Acoustic Microscopy Precondition: JESD22-A113 Moisture Sensitivity Level P (192 Hrs., 30C, 60% RH, 260C Reflow)

Aged Bond Strength 200°C, 4HRS MIL-STD-883, Method 883-2011 P

Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P

Data Retention 125°C, non-biased P (Plastic)

Dynamic Latch-up JESD78 P

Electrostatic Discharge JESD22-C101 P Charge Device Model (ESD-CDM) 500V/750V/1000V/1250V/1500V/1750V/2000V Electrostatic Discharge JESD22-A114 P Human Body Model (ESD-HBM) 1100V/2200V/3300V/4000V Electrostatic Discharge 200V P Machine Model (ESD-MM) JESD22-A115 JEDEC STD 22-A110: 130C, 85%RH, 3.6V High Accelerated Saturation Test (HAST) Precondition: JESD22-A113 Moisture Sensitivity Level P (192 Hrs., 30C, 60% RH, 260C Reflow) High Temperature Operating Life JESD22 -A108, 125C P Early Failure Rate Dynamic Operating Condition, Vcc = 3.6V High Temperature Operating Life JESD22 -A108, 125C P Latent Failure Rate Dynamic Operating Condition, Vcc = 3.6V

High Temp Storage JESD22-A103: 150C, no bias P

Dynamic Operating Condition, Vcc = 4.3V, -30 C, f = 4MHz Low Temperature Operating Life P JESD22-A108 NVM Endurance /Data Retention MIL-STD-883, Method 883-1033 P (Plastic ) <1.47 Neutron Emission (SER) Vccnom, room temperature, JESD89 FIT/Mb

Neutron Single Latch-up (SEL) Vccmax, Data Sheet max temperature, JESD89 No event

JESD22-A102: 121 C, 100%RH, 15 PSIG Pressure Cooker Test Precondition: JESD22-A113 Moisture Sensitivity Level P (192 Hrs., 30C, 60% RH, 260C Reflow) JESD78 Static Latch-up +/-100mA; +/-140mA, 125C P +/-140mA; +/-200mA; +/-300mA, 85C MIL-STD-883, Method 1010, Condition C, -65C to 150C Temperature Cycle Precondition: JESD22-A113 Moisture Sensitivity Level P (192 Hrs., 30C, 60% RH, 260C Reflow)

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RELIABILITY FAILURE RATE SUMMARY

Stress/Test Device Tested/ # Activation Thermal Failure Rate Device Hours Fails Energy AF3

High Temperature Operating Life 6,651 Devices 0 N/A N/A 0 PPM1 Early Failure Rate

High Temperature Operating Life 611,000 DHRs 0 0.7 55 27 FIT2 Long Term Failure Rate

1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. 2 Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation

 E A  1 1   AF = exp   -    k T 2 T1  

where:

EA =The Activation Energy of the defect mechanism. K = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions.

1Early Failure Rate was computed from QTP# 163901

2 Long Term Failure Rate was computed from QTP# 143905 and QTP# 163901 Data.

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Reliability Test Data QTP #: 143905

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: AGED BOND STRENGTH FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand COMP 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand COMP 3 0

STRESS: ACOUSTIC, MSL3

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 15 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand COMP 15 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand COMP 15 0 STRESS: CONSTRUCTIONAL ANALYIS FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 5 0 STRESS: DATA RETENTION,125C FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 500 77 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 75 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 500 77 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1000 77 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 500 77 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1000 66 0 STRESS: DYNAMIC/LATCH-UP FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 3 0

STRESS: ENDURANCE, 125C

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 168 77 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 500 77 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 77 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 168 77 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 500 77 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1000 76 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 168 77 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 500 77 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1000 77 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 143905

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: ESD-CHARGE DEVICE MODEL

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 500 9 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 750 3 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 3 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1250 3 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1500 3 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1750 3 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 2000 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 500 9 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 750 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1000 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1250 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1500 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1750 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 2000 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 500 9 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 750 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1000 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1250 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1500 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1750 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 2000 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 500 9 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 750 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 1000 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 1250 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 1750 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 2000 3 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 143905

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: ESD-CHARGE DEVICE MODEL

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 500 9 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 750 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 1000 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 1250 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 1500 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 1750 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 2000 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 500 9 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 750 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 1000 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 1250 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 1500 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 1750 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 500 9 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 750 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 1000 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 1250 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 1500 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 1750 3 0

STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1100 3 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 2200 8 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 3300 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1100 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 2200 8 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 3300 3 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 143905

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1100 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 2200 8 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 3300 3 0

FM25V20A-G (FTP25V20B) 2443004 611444239 UTL-Thailand 1100 3 0

FM25V20A-G (FTP25V20B) 2443004 611444239 UTL-Thailand 2200 8 0

FM25V20A-G (FTP25V20B) 2443004 611444239 UTL-Thailand 3300 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 1100 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 2200 8 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 3300 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 1100 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 2200 8 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 3300 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 1100 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 2200 8 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 3300 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 1100 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 2200 8 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 3300 3 0

STRESS: ESD-MACHINE MODEL

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 200 5 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 200 5 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 200 5 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand 200 5 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand 200 5 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand 200 5 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand 200 5 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 143905

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH ACCELERATED SATURATION TEST 130C, 85%RH, 3.6V, PRE COND 192 HRS 30C/60%RH, MSL3 FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 96 28 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 96 27 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 96 28 0

STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.6V, Vcc Max)

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 96 1500 0

CY15B102Q7 (7A1502B9D) 2628001 611629751 UTL-Thailand 96 3283 0

FM25V20A7-G (FPP25V20D) 2629051 611627197 UTL-Thailand 96 3500 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 96 941 0

CY15B102Q7 (7A1502B9D) 2553000 611627196 UTL-Thailand 96 3500 0

STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, REG-ON

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 96 45 0

STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.6V, Vcc Max)

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 116 178 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 178 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 116 178 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1000 178 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 116 178 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1000 178 0 STRESS: HIGH TEMPERATURE STORAGE,150C FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 500 80 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 80 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 500 80 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1000 80 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 500 80 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1000 80 0 STRESS: LOW TEMPERATURE OPERATING LIFE,-30C FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 500 32 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 32 0 STRESS: LTOL READ & RECRORD,-30C FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 32 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 143905

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: PRESSURE COOKER TEST, 121C,100%RH, PRE COND 192 HRS 30C/60%RH, MSL3

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 168 80 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 168 80 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 168 80 0 STRESS: PRE/POST LFR CRITICAL PARAMETER FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 32 0 STRESS: SOFT ERROR TEST-NEUTRON/PROTON/SEL FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 3 0 STRESS: SOFT ERROR TEST-ALPHA-PATICLE/SEL FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 3 0

STRESS: STATIC LATCH-UP (125C, 140mA)

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand COMP 3 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand COMP 3 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand COMP 3 0

FM25V20A-G (FTP25V20B) 2443004 611444239 UTL-Thailand COMP 3 0

CY15B102Q7 (7A1502B9D) 2553000 611600876 UTL-Thailand COMP 3 0

CY15B102Q7 (7A1502B9D) 2602005 611602793 UTL-Thailand COMP 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617892 UTL-Thailand COMP 3 0

CY15B102Q7 (7A1502B9D) 2538007 611617893 UTL-Thailand COMP 3 0

STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 500 80 0

FM25V20A-G (FTP25V20B) 2443004 611503131 UTL-Thailand 1000 80 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 500 79 0

FM25V20A-G (FTP25V20B) 2444010 611503700 UTL-Thailand 1000 79 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 500 80 0

FM25V20A-G (FTP25V20B) 2445005 611503699 UTL-Thailand 1000 80 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 163901

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: ACOUSTIC, MSL3

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand COMP 15 0

STRESS: DATA RETENTION, 125C

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 500 80 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1000 80 0

STRESS: ENDURANCE, 150C

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 168 80 0

STRESS: ESD-CHARGE DEVICE MODEL

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 500 9 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 750 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1000 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1250 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1500 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1750 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 2000 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 500 9 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 750 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 1000 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 1250 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 1500 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 1750 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand 2000 3 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 500 9 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 750 3 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 1000 3 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 1250 3 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 1500 3 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 1750 3 0

FM25V107 (FPP25V10B) 2705000 611720198 UTL-Thailand 2000 3 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 163901

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1100 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 2200 8 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 3300 3 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 4000 3 0

STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.6V, Vcc Max)

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 96 2000 0

FM25V107 (FPP25V10B) 2705000 611707142 UTL-Thailand 96 2000 0

FM24V107 (FPP24V10B) 2705000 611707143 UTL-Thailand 96 2651 0

STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.6V, Vcc Max)

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 500 77 0

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 1000 77 0

STRESS: PRESSURE COOKER TEST, 121C,100%RH, PRE COND 192 HRS 30C/60%RH, MSL3

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 168 79 0

STRESS: STATIC LATCH-UP (125C, 100mA)

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand COMP 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand COMP 3 0

STRESS: STATIC LATCH-UP (125C, 140mA)

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand COMP 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand COMP 3 0

STRESS: STATIC LATCH-UP (85C, 140mA)

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand COMP 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand COMP 3 0

STRESS: STATIC LATCH-UP (85C, 200mA)

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand COMP 3 0

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand COMP 3 0

STRESS: STATIC LATCH-UP (85C, 300mA)

FM24V057 (FPP24V05B) 2703000 611718939 UTL-Thailand COMP 3 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 17 Document No. 002-20308 Rev. ** ECN #: 5798699

Reliability Test Data QTP #: 163901

Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism

STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3

FM25V107 (FPP25V10B) 2703000 611705981 UTL-Thailand 500 78 0

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 17 Document No.002-20308 Rev. ** ECN # 5798699

Document History Page

Document Title: QTP# 163901: FM20H08 Device Family 130nm Technology, TI 300mm Wafer Fab DMOS 6 Document Number: 002-20308 Rev. ECN Orig. of Description of Change No. Change ** 5798699 JYF Initial Release

Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 17