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GANEX III-N Newsletter Newsletter No. 82 November 2019 GANEX III-N Technology Coordinated by CRHEA-CNRS research laboratory, this monthly newsletter is produced by Knowmade with collaboration from the managers of GANEX groups. The newsletter presents a selection of newest scientific publications, patent applications and press releases related to III- Nitride semiconductor materials (GaN, AlN, InN and alloys) All issues on www.ganex.fr in Veille section. Free subscription http://www.knowmade.com/ganex GANEX Cluster of Excellence (Labex, 2012-2019) GANEX is a cluster gathering French research teams involved in GaN technology. The objective of GANEX is to strengthen the position of French academic players in terms of knowledge and visibility, and reinforce the French industrials in terms of know-how and market share. www.ganex.fr KnowMade KnowMade is a Technology Intelligence and IP Strategy consulting company specialized in analysis of patents and scientific information. The company supports R&D organizations, industrial companies and investors in their business development by helping them to understand their competitive environment, follow technology trends, and find out opportunities and threats in terms of technology and patents. Knowmade operates in the following industrial sectors: Compound Semiconductors, Power Electronics, RF & Microwave Technologies, LED/OLED Lighting & Display, Photonics, Memories, MEMS & Sensors, Manufacturing & Advanced packaging, Batteries & Energy management, Biotechnology, Pharmaceuticals, Medical Devices, Medical Imaging, Agri-Food & Environment. Knowmade’s experts provide prior art search, patent landscape analysis, scientific literature analysis, patent valuation, IP due diligence and freedom-to-operate analysis. In parallel the company proposes litigation/licensing support, technology scouting and IP/technology watch service. Knowmade’s analysts combine their technical and patent expertise by using powerful analytics tools and proprietary methodologies to deliver relevant patent analyses and scientific reviews. www.knowmade.com METHODOLOGY Sources 10+ scientific journal editors Elsevier, IOP, IEEE, Wiley, Springer, APS, AIP, AVS, ECS, Nature, Science … 10+ specialist magazines Semiconductor Today, ElectoIQ, i-micronews, Compound Semiconductor, Solid State Technology … 5+ open access database: FreeFulPDF, DOAJ … Patent database: Questel-Orbit Each month 150+ new scientific publications 200+ new patent applications 30+ new press releases Selection by III-N French experts GANEX monthly newsletter GaNEX | III-N Technology Newsletter No. 82 | 2 TABLE OF CONTENTS (clickable links to chapters) SCIENTIFIC PUBLICATIONS ............................................................................................................................. 4 GROUP 1 - LEDs and Lighting ................................................................................................................................. 4 GROUP 2 - Laser and Coherent Light ................................................................................................................... 14 GROUP 3 - Power Electronics .............................................................................................................................. 16 GROUP 4 - Advanced Electronics and RF ............................................................................................................. 25 GROUP 5 – MEMS and Sensors............................................................................................................................ 30 GROUP 6 - Photovoltaics and Energy harvesting................................................................................................. 39 GROUP 7 - Materials, Technology and Fundamental .......................................................................................... 43 PRESS RELEASE ............................................................................................................................................ 59 PATENT APPLICATIONS ................................................................................................................................ 83 GaNEX | III-N Technology Newsletter No. 82 | 3 SCIENTIFIC PUBLICATIONS Selection of new scientific articles GROUP 1 - LEDs and Lighting Group leader: Benjamin Damilano (CRHEA-CNRS) Information selected by Benjamin Damilano and Mathieu Leroux (CRHEA-CNRS) Hole injection mechanism in the quantum wells of light at both ends of the in-plane waveguide to direct blue light emitting diode with V pits for micro- amplified spontaneous emission downward through display application the transparent GaN substrate. Record optical peak LED Division, LG Innotek Co., Ltd., Paju, Gyeonggi 10842, powers of >2 W (both outputs) are reported under Republic of Korea pulsed operation at 1% duty cycle. A broad, smooth Department of Materials Science and Engineering, Korea emission spectrum with a FWHM of 6 nm centered at University, Seoul 02841, Republic of Korea 416 nm is measured at peak output and ascribed to Techical University of Berlin, Institute of Festkorperphys, very low feedback associated with the turning mirror D-10623 Berlin and Leibniz Institute of and antireflection coating. Hochstfrequenztech, Ferdinand Braun Institute, D-12489 Berlin, Germany Strain relaxation of InGaN/GaN multi-quantum well Centre for Integrated Research of Future Electronics, and light emitters via nanopatterning Institute of Materials and Systems for Sustainability, Department of Chemical Engineering, University of Nagoya University, Nagoya 464-8601, Japan California, Santa Barbara, Santa Barbara, California 93106, USA Applied Physics Express Materials Department, University of California, Santa https://doi.org/10.7567/1882-0786/ab45d1 Barbara, Santa Barbara, California 93106, USA Department of Electrical and Computer Engineering, The current injection mechanisms for blue light University of California, Santa Barbara, Santa Barbara, emitting diodes (LEDs) with and without V pits were California 93106, USA examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by Optics Express reducing the indium content. To identify the https://doi.org/10.1364/OE.27.030081 distribution of holes in the QWs, the electroluminescence of the LEDs was characterized Strain in InGaN/GaN multiple-quantum well (MQW) by varying the positions of the QWs with the wider light emitters was relaxed via nanopatterning using bandgap consecutively from n-cladding to p-cladding colloidal lithography and top-down plasma etching. sides. For the LEDs without V pits, holes were Colloidal lithography was performed using Langmuir- injected through the top QWs (p-cladding side), while Blodgett dip-coating of samples with silica particles for the LEDs with V pits, holes were injected mainly (d = 170, 310, 690, 960 nm) and a Cl2/N2 inductively through the bottom QWs (n-cladding side). coupled plasma etch to produce nanorod structures. The InGaN/GaN MQW nanorods were characterized High power surface emitting InGaN using X-ray diffraction (XRD) reciprocal space superluminescent light-emitting diodes mapping to quantify the degree of relaxation. A peak Tyndall National Institute, University College Cork, Lee relaxation of 32% was achieved for the smallest Maltings, Cork T12R5CP, Ireland diameter features tested (120 nm after etching). Power-dependent photoluminescence at 13 K Applied Physics Letters showed blue-shifted quantum well emission upon https://doi.org/10.1063/1.5118953 relaxation, which is attributed to reduction of the inherent piezoelectric field in the III-nitrides. Poisson- A high power InGaN superluminescent light-emitting Schrödinger simulations of single well structures also diode emitting normal to the substrate is predicted increasing spectral blueshift with strain demonstrated. The device uses a structure in which a relaxation, in agreement with experiments. monolithically integrated turning mirror reflects the GaNEX | III-N Technology Newsletter No. 82 | 4 Surface-plasmon-enhanced LED based on multilayer significant improvement in electronic and optical gratings and core-shell Ag/SiO2 nanoparticles characteristics. In N-LED, the turn-on voltage, internal Institute of Electrical Engineering, Yanshan University, quantum efficiency and radiative recombination rate Qinhuangdao 066004, People's Republic of China is improved by 6%, three times at 100 A cm−2 and School of Mathematics and Science and Technology 194%, respectively. It is shown that the effective Information, Hebei Normal University of Science and barrier heights and energy band offsets are the Technology, Qinhuangdao 066004, People's Republic of China governing reason behind the significant improvement Institute of Photon, Department of Physics, Strathclyde in N-polar devices. University, Glasgow, United Kingdom Light extraction enhancement of AlGaN-based Materials Research Express vertical type deep-ultraviolet light-emitting-diodes https://doi.org/10.1088/2053-1591/ab414f by using highly reflective ITO/Al electrode and surface roughening This paper proposes a novel GaN-based LED with Department of LED Business, Chip development group, LG nano-grating structure based on surface plasmons. Innotek Co, Ltd, Paju, 10842, South Korea This structure mainly contains n-GaN, multiple School of Advanced Materials Science and Engineering, quantum wells and p-GaN, Ag–SiO2 grating, core– Sungkyunkwan University, Suwon 16419, South Korea shell Ag/SiO2 nanoparticle and ITO triangular grating. SKKU Advanced Institute of
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