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Metrology, Inspection, and Process Control for Microlithography XVIII

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Metrology, Inspection, and Process Control for Microlithography XVIII PROCEEDINGS OF SPIE SPIE—The International Society for Optical Engineering Metrology, Inspection, and Process Control for Microlithography XVIII Richard M. Silver Chair/Editor 23-26 February 2004 Santa Clara, California, USA Sponsored and Published by SPIE—The International Society for Optical Engineering Cooperating Organizations SEMI—Semiconductor Equipment and Materials International International SEMATECH P Volume 5375 Part Two of Two Parts SPIE is an international technical society dedicated to advancing engineering and scientific applications of optical, photonic, imaging, electronic, and optoelectronic technologies. Contents Part One XVII Conference Committee xxi Plenary Paper: Resolution enhancement technology: the past, the present, and extensions for the future [5377-301] F. M. Schellenberg, Mentor Graphics Corp. (USA) SESSION 1 KEYNOTE PRESENTATION Metrology requirements for lithography's next wave (Keynote Paper) [5375-01 ] H. J. Levinson, Advanced Micro Devices, Inc. (USA) SESSION 2 MASK-RELATED METROLOGY I 10 Low vacuum microscopy for mask metrology [5375-02] D. C. Joy, Univ. of Tennessee/Knoxville (USA) and Oak Ridge National Lab. (USA) 18 Phase defect detection with spatial heterodyne interferometry [5375-04] P. R. Bingham, K. W. Tobin, Oak Ridge National Lab. (USA); M. H. Bennett, P. Marmillion, International SEMATECH (USA) 29 Characterization of new CD photomask standards [5375-05] W. Mirande, B. Bodermann, W. Häßler-Grohne, С. G. Frase, S. Czerkas, H. Bosse, Physikalisch-Technische Bundesanstalt (Germany) 41 Simultaneous critical dimension and overlay measurements on a SEM through target design for inline manufacturing lithography control [5375-06] E. P. Solecky, J. D. Morillo, IBM Microelectronics Div. (USA) SESSION 3 OVERLAY AND REGISTRATION METROLOGY I 51 A new approach to pattern metrology (Invited Paper) [5375-07] C. P. Ausschnitt, IBM Semiconductor Research and Development Ctr. (USA) 66 Scanner overlay mix and match matrix generation: capturing all sources of variation [5375-08] S. J. DeMoor, Texas Instruments, Inc. (USA); J. M. Brown, Nikon Precision, Inc. (USA); J. C. Robinson, KLA-Tencor Corp. (USA); S. Chang, C. Tan, Texas Instruments, Inc. (USA) 78 High-resolution optical overlay metrology [5375-09] R. M. Silver, R. Attota, M. Stocker, National Institute of Standards and Technology (USA); M. Bishop, International SEMATECH (USA); J. J. Jun, E. Marx, National Institute of Standards and Technology (USA); M. P. Davidson, Spectel Co. (USA); R. D. Larrabee, National Institute of Standards and Technology (USA) 96 Alignment in chromeless masks [5375-10] M. Mukherjee-Roy, N. Singh, S. S. Mehta, Institute of Microelectronics (Singapore); H. Suda, T. Kubota, Y. Kimura, H. Kinoshita, HOYA Corp. (Japan) 105 Alignment mark signal simulation system for the optimum mark feature selection [5375-11] T. Sato, A. Endo, Т. Higashiki, К. Ishigo, Т. Kono, Т. Sakamoto, Y. Shioyama, S. Tanaka, Toshiba Corp. (Japan) 114 Evaluation of alignment performance of different exposure tools under various CMP conditions [5375-12] I. K. Abramovich, W.-J. Chung, Tower Semiconductor, Ltd. (Israel) 122 Overlay measurement tool up to 70-nm design rule [5375-13] T. Fukui, H. Aoki, T. Endo, Т. Yamada, Nikon Corp. (Japan) SESSION 4 SEM/SCATTEROMETRY FOR CRITICAL DIMENSION METROLOGY I 133 Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology (Invited Paper) [5375-14] B. Banke, C. N. Archie, M. Sendelbach, J. Robert, J. A. Slinkman, P. Kaszuba, R. Kontra, M. DeVries, E. P. Solecky, IBM Microelectronics Div. (USA) 151 Results of benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node [5375-48] B. D. Bunday, M. Bishop, International SEMATECH (USA); J. A. Allgair, Motorola (USA) and International SEMATECH (USA) 173 Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography [5375-18] C.-M. Ke, H.-L Hung, A. Chang, J.-H. Chen, T.-S. Gau, Y.-C. Ku, B. J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan); T. Otaka, K. Ueda, H. Kawada, H. Nomura, N. Ren, Hitachi High-Technologies Corp. (Japan) 183 CD metrology for the 45-nm and 32-nm nodes [5375-16] B. J. Rice, H. B. Cao, Intel Corp. (USA); O. Chaudhuri, Lawrence Berkeley National Lab. (USA); M. G. Grumski, Intel Corp. (USA); B. D. Harteneck, A. Liddle, D. Olynick, Lawrence Berkeley National Lab. (USA); J. M. Roberts, Intel Corp. (USA) 191 Preliminary evaluation of line-edge roughness metrology based on CD-SAXS [5375-54] R. L. Jones, Т. Ни, С. L. Soles, E. K. Lin, W. Wu, National Institute of Standards and Technology (USA); D. M. Casa, Argonne National Lab. (USA); A. Mahorowala, IBM Thomas J. Watson Research Ctr. (USA) SESSION 5 METHODS FOR MODELING 199 Dimensional metrology of resist lines using a SEM model-based library approach [5375-19] J. S. Villarrubia, A. E. Vladär, National Institute of Standards and Technology (USA); B. D. Bunday, M. Bishop, International SEMATECH (USA) IV 210 A new analysis strategy for CD metrology using rapid photo goniometry method [5375-20] J. Petit, Electronics for Displays and Imaging Devices SA (France); P. Barritault, J. Hazart, P. Chaton, CEA-LETI (France); P. Boher, M. Luet, T. Leroux, Electronics for Displays and Imaging Devices SA (France) 222 Improved overlay metrology device correlation on 90-nm logic processes [5375-21] A. Ueno, К. Tsujita, Renesas Technology Corp. (Japan); H. Kurita, Y. Iwata, KLA-Tencor Corp. (Japan); M. Ghinovker, J. M. Poplawski, E. Kassel, M. E. Adel, KLA-Tencor Corp. (Israel) 232 Effective-medium model for fast evaluation of scatterometric measurements on gratings [5375-22] A. Weidner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany); M. Slodowski, C. Halm, Leica Microsystems Semiconductor GmbH (Germany); C. Schneider, L. Pfitzner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany) 244 A simple robust bias-free method of calculating CD-SEM resolution [5375-23] I. J. Rosenberg, Soluris, Inc. (USA) 254 Usage of overlay metrology simulator in design of overlay metrology tools for the 65-nm node and beyond [5375-24] Y. Simovitch, S. Gov, Nova Measuring Instruments, Ltd. (Israel) SESSION 6 PROCESS CONTROL AND CHARACTERIZATION I 266 Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists [5375-25] M. Ercken, L. H. A. Leunissen, I. Pollentier, IMEC (Belgium); G. P. Patsis, V. Constantoudis, E. Gogolides, Institute of Microelectronics (Greece) 276 Across-wafer CD uniformity enhancement through control of multizone РЕВ profiles [5375-26] Q. Zhang, P. D. Friedberg, Univ. of California/Berkeley (USA); C. Tang, B. Singh, Advanced Micro Devices, Inc. (USA); K. Poolla, C. J. Spanos, Univ. of California/Berkeley (USA) 287 Assessments on process parameters' influences to the proximity correction [5375-27] E.-M. Lee, S.-W. Lee, D.-Y. Lee, S.-H. Choi, J.-O. Park, S.-G. Jung, G.-S. Yeo, J.-H. Lee, H.-K. Cho, W.-S. Han, Samsung Electronics Co., Ltd. (South Korea) 296 Multivariate analysis of a 100-nm process measured by in-line scatterometry [5375-28] S. Egret, Tokyo Electron France S.A.R.L. (France); T. Furusho, Tokyo Electron Kyushu, Ltd. (Japan); B. Baudemprez, IMEC (Belgium) 307 Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology [5375-79] K. R. Lensing, С Miller, G. Chudleigh, FASL, LLC (USA); B. Swain, M. Laugher/, Timbre Technologies, Inc. (USA); A. Viswanathan, Tokyo Electron America, Inc. (USA) v SESSION 7 MASK-RELATED METROLOGY II: DEFECT ANALYSIS 317 Improving the uncertainty of photomask linewidth measurements [5375-31 ] J. M. Pedulla, Consultant to National Institute of Standards and Technology (USA); J. Potzick, R. M. Silver, National Institute of Standards and Technology (USA) 328 A new optical technique for monitoring wafer curvature and stress during copper damascene processing [5375-39] С A. Boye, R. Carpio, International SEMATECH (USA); J. Woodring, D. M. Owen, Oraxion Diagnostics (USA) 337 Contact hole edge roughness: circles vs. stars [5375-33] A. Habermas, Q. Lu, Cypress Semiconductor Corp. (USA); D. Chase-Colin, M. Har-Zvi, A. Tarn, O. Sagi, Applied Materials, Inc. (Israel) 346 Defect inspection of quartz-PSMs: taking a leap forward [5375-34] J. P. Heumann, F. Schurack, Advanced Mask Technology Ctr. (Germany); W. Dettmann, Infineon Technologies AG (Germany); L. Zurbrick, M. Lang, KLA-Tencor Corp. (USA) 355 Reticle surface contaminants and their relationship to sub-pellicle defect formation [5375-35] B. J. Grenon, Grenon Consulting, Inc. (USA); K. Bhattacharyya, W. W. Volk, KLA-Tencor Corp. (USA); K. A. Phan, Advanced Micro Devices, Inc. (USA); A. Poock, Advanced Micro Devices Saxony LLC and Co. KG (Germany) SESSION 8 METROLOGY TOOL DEVELOPMENT 363 An image stitching method to eliminate the distortion of the sidewall in linewidth measurement [5375-37] X. Zhao, Harbin Institute of Technology (China); J. Fu, National Institute of Standards and Technology (USA); W. Chu, Harbin Institute of Technology (China); С Nguyen, Eloret Corp. (USA) and NASA Ames Research Ctr. (USA); T. V. Vorburger, National Institute of Standards and Technology (USA) 374 Comparison of actinic lens characterization by aerial image evaluation and interferometric testing for 157-nm high-NA micro-objectives [5375-41] H. Schreiber, Corning Tropel Corp. (USA) SESSION 9 OVERLAY AND REGISTRATION METROLOGY II 384 A comparison of methods for in-chip overlay control at the 65-nm node [5375-42] J. С Robinson, M. Stakely, KLA-Tencor Corp. (USA); J. M. Poplawski, P. Izikson, E. Kassel, M. E. Adel, KLA-Tencor Corp. (Israel) 395 Evaluation of new in-chip and arrayed line overlay target designs [5375-43] R. Attota, R. M. Silver, National Institute of Standards and Technology (USA); M. Bishop, International SEMATECH (USA); E. Marx, J. J. Jun, M. Stocker, National Institute of Standards and Technology (USA); M. P. Davidson, Spectel Co. (USA); R. D. Larrabee, National Institute of Standards and Technology (USA) VI 403 Target noise in overlay metrology [5375-44] J. L. Seligson, M. E. Adel, P. Izikson, V. Levinski, D. Yaffe, KLA-Tencor Corp.
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