Infineon’s technology trifecta for power designs of today and tomorrow CoolMOS™ 7 – CoolSiC™ – CoolGaN™

Infineon is the leader in the power market and CoolMOS™ SJ MOSFET products boast the outstanding figures of currently the only manufacturer mastering all power technologies merit in terms of conduction, switching and driving losses. With while offering the broadest product and technology portfolio quality and efficiency-ensuring features of its products, Infineon of (such as SJ , IGBTs), (such as is setting new standards for energy efficiency, power density and Schottky diodes, MOSFETs) and -based (e-mode ease of use. CoolSiC™ and CoolGaN™ enable extremely efficient and HEMTs) devices, covering bare die, discretes and module compact system designs that meet future demands for greener and solutions. better products. Additionally, a comprehensive portfolio of ICs for Si and WBG technologies unlock the full potential of Equipped with the only 300 millimeter fab for power semi- the switches. conductors in the world, Infineon is best positioned to fully seize the growth opportunities in the power semiconductor industry. Infineon – part of your life, part of tomorrow.

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10M SiC Key features Silicon (Si) ››Mainstream technology 1M Central PV1) Silicon carbide (SiC) ››Reaching tipping point Pile ››Targeting voltage classes 100k ranging from 600 V to 3.3 kV High power 1) PV = photovoltaic inverter ›› 2) OBC 2) OBC = onboard charger Gallium nitride (GaN) String PV1) 10k GaN ››Lower cost than SiC ››Targeting voltage classes Si ranging from 100 V to 600 V Remains ››Medium power mainstream 1k technology

fsw [Hz] 1k 10k100k1M10M

www.infineon.com/coolmos www.infineon.com/coolsic www.infineon.com/coolgan Discover Infineon’s power technologies for high voltage designs, all of them complemented with dedicated gate drivers for Si, SiC and GaN devices. To learn more about the driver ICs please visit www.infineon.com/gatedrivers

Si SiC GaN

CoolMOS™ features CoolSiC™ features CoolGaN™ features

›› Broadest SJ MOSFET portfolio on the market – CoolSiC™ MOSFET ›› 10x higher breakdown field and 1) wide on-state resistance (RDS(on)) granularity Low device capacitance 2x higher mobility ›› 1) ›› Best in class RDS(on)/package ›› Temperature-independent switching losses ›› 10x lower output charge ›› Highest efficiency with an optimized ›› Intrinsic diode with low reverse recovery charge ›› Zero reverse recovery charge price/performance ratio Threshold-free on-state characteristics ›› 10x lower gate charge and linear output ›› 1) ›› Innovative package concepts capacitance (Coss) characteristic ›› Low switching losses (Eoss), Gate charge (Qg) CoolSiC™ ›› No reverse recovery charge ›› Purely capacitive switching ›› Lowest figure of merit (Qc x Vf)

Technical benefits Technical benefits Technical benefits

›› Low conduction and switching losses CoolSiC™ MOSFET ›› Very low RDS(on) and large cost-down potential ›› Ease of use ›› Superior gate oxide reliability ›› Excellent efficiency in resonant circuits ›› High reliability ›› Best-in-class switching and conduction losses ›› New topologies and current modulation ›› Product robustness ›› IGBT-compatible driving (+15 V) ›› Fast (and nearly lossless) switching Excellent thermal management ›› ›› Threshold voltage, Vth > 4 V ›› Short-circuit robustness

CoolSiC™ Schottky Diode ›› Low turn-off loss ›› Low conduction loss ›› Reduction of CoolMOS™ or IGBT turn-on loss ›› Switching loss independent of load current, switching speed and temperature

Customer benefits Customer benefits Customer benefits

›› High power density resulting in CoolSiC™ MOSFET ›› Extreme power density resulting in compact and light design ›› Highest efficiency for reduced cooling effort compact and light design ›› Higher efficiency resulting in operational ›› Long lifetime and great reliability ›› Extreme efficiency resulting in operational expenditure (OPEX) savings for end customers ›› High frequency operation expenditure (OPEX) savings for end customers ›› Bill of material (BOM) savings resulting in low ›› Reduction in system cost ›› Bill of material (BOM) savings resulting in low system cost ›› High power density system cost ›› Long system lifetime ›› Low system complexity ›› Ease of design and implementation

CoolSiC™ Schottky Diode ›› System efficiency improvements –– Reduced cooling requirements –– Enabling higher frequency ›› High power density ›› High system reliability ›› Low electromagnetic interference (EMI) 1) Compared to Si

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