Standard X-Ray Diffraction Powder Patterns: Section 21

Total Page:16

File Type:pdf, Size:1020Kb

Standard X-Ray Diffraction Powder Patterns: Section 21 NAT'UNST OF STANDARDS i NBS TECH R I G. AlllDE 3SS7^ PUBLICATIONS A1 11 02350574 /NBS/NR^ monograph QC100 .U55S \^5,SECT.21;1986 C.2 NB8-PUB o Q NBS MONOGRAPH 25-SECTION 21 Q U.S. DEPARTMENT OF COMMERCE/National Bureau of Standards Standard X-ray Powder Patterns QC 100 .U556 No. 25 Sect. 21 1985 c.2 . Tm he National Bureau of Standards' was established by an act of Congress on March 3, 1901. The Bureau's overall goal is facilitate jla to strengthen and advance the nation's science and technology and their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau's technical work is performed by the National Measurement Laboratory, the National Engineering Laboratory, the Institute for Computer Sciences and Technology, and the Institute for Materials Science and Engineering The National Measurement Laboratory Provides the national system of physical and chemical measurement; • Basic Standards^ coordinates the system with measurement systems of other nations and • Radiation Research furnishes essentiaJ services leading to accurate and uniform physical and • Chemical Physics chemical measurement throughout the Nation's scientific community, in- • Analytical Chemistry dustry, and commerce; provides advisory and research services to other Government agencies; conducts physical and chemical research; develops, produces, and distributes Standard Reference Materials; and provides calibration services. The Laboratory consists of the following centers: The National Engineering Laboratory Provides technology and technical services to the public and private sectors to Applied Mathematics address national needs and to solve national problems; conducts research in Electronics and Electrical engineering and applied science in support of these efforts; builds and main- Engineering"^ tains competence in the necessary disciplines required to carry out this Manufacturing Engineering research and technical service; develops engineering data and measurement Building Technology capabilities; provides engineering measurement traceability services; develops Fire Research test methods and proposes engineering standards and code changes; develops Chemical Engineering^ and proposes new engineering practices; and develops and improves mechanisms to transfer results of its research to the ultimate user. The Laboratory consists of the following centers: The Institute for Computer Sciences and Technology Conducts research and provides scientific and technical services to aid Programming Science and Federal agencies in the selection, acquisition, application, and use of com- Technology puter technology to improve effectiveness and economy in Government Computer Systems operations in accordance with Public Law 89-306 (40 U.S.C. 759), relevant Engineering Executive Orders, and other directives; carries out this mission by managing the Federal Information Processing Standards Program, developing Federal ADP standards guidelines, and managing Federal participation in ADP voluntary standardization activities; provides scientific and technological ad- visory services and assistance to Federal agencies; and provides the technical foundation for computer-related policies of the Federal Government. The In- stitute consists of the following centers: The Institute for Materials Science and Engineering Conducts research and provides measurements, data, standards, reference Inorganic Materials materials, quantitative understanding and other technical information funda- Fracture and Deformation"^ mental to the processing, structure, properties and performance of materials; Polymers addresses the scientific basis for new advanced materials technologies; plans Metallurgy research around cross-country scientific themes such as nondestructive Reactor Radiation evaluation and phase diagram development; oversees Bureau-wide technical programs in nuclear reactor radiation research and nondestructive evalua- tion; and broadly disseminates generic technical information resulting from its programs. The Institute consists of the following Divisions: 'Headquarters and Laboratories at Gaithersburg, MD, unless otherwise noted; mailing address Gaithersburg, MD 20899. "Some divisions within the center are located at Boulder, CO 80303 'Located at Boulder, CO, with some elements at Gaithersburg, MD. JilPT10Vn.t BUBHAU OF STAIfDARDa Standard X-ray Diffraction Powder Patterns Section 21 — Data for 92 Substances Marlene C. Morris, Howard F. McMurdie, Eloise H. Evans, Boris Paretzkin, Harry S. Parker, Winnie Wong-Ng, and Donna M. Gladhill International Centre for Diffraction Data 1601 Park Lane Swarthmore, PA 19081 and Camden R. Hubbard National Measurement Laboratory National Bureau of Standards Gaithersburg, MD 20899 ® International Centre for Diffraction Data U.S. DEPARTMENT OF COMMERCE, Malcolm Baldrige, Secretary NATIONAL BUREAU OF STANDARDS. Ernest Ambler. Director Issued September 1985 Library of Congress Catalog Card Number: 53-61386 National Bureau of Standards Monograph 25 Section 21 — Data for 92 Substances Natl. Bur. Stand. (U.S.), Monogr. 25— Sec. 21, 142 pages (Sept. 1985) CODEN: NBSMA6 U.S. GOVERNMENT PRINTING OFFICE WASHINGTON: 1985 For sale by the Superintendent of Documents, U.S. Government Printing Office, Washington, DC 20402 , CONTENTS Page Page Introduction 1 Mgnesium hydrogen phosphate hydrate (newberyite), MgHP0^.3H20. 83 Experimental patterns: Magnesium nitride, Mg^N^ 85 Magnesium siliclde, Mg2Sl.... 86 Aluminum carbide, AljjC^ 7 Magnesium titanium oxide, MgTl20c Aluminum fluoride hydrate, 0-AlFo«3H2O. 8 (form A) 87 Ammonium fluoride, NHj^F 9 Magnesium titanium oxide, MgTi20c Ammonium Iron sulfate hydrate (mohrlte), (form B) 89 (NH,,)2Fe(S0i,)2'6H20 10 Manganese borlde, MnBj 91 Ammonium magnesium selenate hydrate, Manganese silicate (tephrolte), MngSlOn.. 92 (NHw)2Mg(Se0i,)2'6H20 12 Manganese sulfate, MnSOj^ 94 Ammonium magnesium sulfate hydrate Molybdenum carbide, a-Mo2C 95 (bousslngaultlte), (NHi,)2Mg(S0i,)2'6H20. 14 Molybdenum slllclde, M0SI2 96 Ammonium nickel selenate hydrate, Niobium borlde, e-NbB2 97 (NHjj)2Nl(Se0j,)2'6H20 16 Potassium calcium hydrogen phosphate, Ammonium zinc selenate hydrate, K2CaH(POi,)2 98 (NHi,)2Zn(Se0i,)2'6H20 18 Potassium copper sulfate hydrate Ammonium zinc sulfate hydrate, (cyanochroite) , K2Cu(S0j^)2'6H20 99 (NHj,)2Zn(S0i,)2'6H20 20 Potassium hydrogen phosphate Antimony phosphate, SbPOjj 22 (archerlte), KH2POH 101 Barium bismuth titanium oxide, Potassium magnesium phosphate hydrate, BaBijjTli,0^5 24 KMgPO^-eHpO 102 Barium copper phosphate, Ba2Cu(P0g)g. 25 Potassium nickel selenate hydrate, Barium silicate, Ba^SigOpi 27 K2Nl(Se0i^)2'6H20 104 Barium titanium borate, BaTl(B0,)2. 29 Potassium nickel sulfate hydrate, Barium titanium oxide, BaTlcOi ^ ......... 30 K2Ni(S0i,)2'6H20 106 Barium titanium oxide, BajTlOi,. 32 Potassium phosphate, KPO^ 108 Barium titanium oxide, Baj^Ti^ oOog. , 34 Potassium sodium phosphate, K\iai2^^^i)i- > • Barium titanium oxide, Ba^Tl^ yO^Q. ...... 36 Potassium titanium oxide phosphate, Beryllium oxide (bromelllte) , BeO. 38 KTlOPOj, 110 Bismuth dysprosium titanium oxide, Potassium zirconium phosphate, Bio gDyn nTljO^g 39 KZr2(POn)3 112 Bismuth titanium oxide, BljiTljO^ 2* •••••• • ^1 Silver titanium phosphate, kg1i2{?0^)y , , 114 Boron carbide, BhC 43 Sodium germanium fluoride, Na2GeF£ 115 Boron slllclde, B^jSi. ................... 44 Sodium magnesium hydrogen phosphate, Boron slllclde, BgSl. ................... 45 NaoMgH(P0n)2 117 Cadmium silicate, CdSiO^. ............... 47 Sodium rhenium oxide, NaReOj,. 119 Cadmium titanium phosphate, CdTl2((P0j^)g; . 48 Strontium chromium oxide, SrCrOjj. ....... 120 Calcium aluminum silicate (gehlenlte), Strontium titanium phosphate, CapAljSiO^ 50 SrTl^(POi,). 122 Calcium fluoride (fluorite), CaF2. •••••• 52 Tantalum borlde, TaB 123 Calcium germanium phosphate, CaGeh(POij)g. 53 Tantalum carbide, TaC... 124 Calcium titanium phosphate, CaTlj^(P0j^)g. 54 Titanium borlde, TlBg. 125 Calcium zinc silicate (hardystonite) Titanium slllclde, TISI2... 126 CagZnSlpOy 55 Tungsten borlde, 6-WB 127 Calcium zirconium oxide, CaZrO^ 57 Tungsten carbide, a-W2C 128 Cesium hydrogen phosphate, CsH2P0|j. 58 Vanadium carbide, VgC^ 129 Chromium carbide, Cr-^C2 60 Vanadium nitride, VN 130 Chromium carbide, Cr^^Cg. ............... 62 Yttrium nitride, YN 131 Chromium nitride, 6~Cr2N. 63 Zinc molybdenum oxide, a-ZnMoO^j 132 Chromium slllclde, Y-CrSi^. ............. 64 Zinc nitride, Zn.^\i2 • Chromium tungsten oxide, Cr2W0^ 65 Zirconium carbide, ZrC 135 Cobalt titanium oxide, C0TI2OC 66 Zirconium nitride, ZrN. 136 Copper arsenic sulfide, enarglte, Cu^AsSi, 68 Cumulative indices will be published every Copper iron sulfide, chalcopyrite, second year beginning In 1985. CuFeS2 69 Hydroxylamlne hydrochloride, NH20H'HCIl. 70 Mineral name index, this Issue 137 Iron carbide (cohenlte), Fe^C 72 Iron slllclde (ferdisiliclte) , FeSl2..... 73 Lead zirconium oxide, PbZrO, 74 Lithium aluminum silicate, B~LlAlSi20g. 75 Lithium aluminum silicate, LlAlSi^Og 76 Lithium manganese oxide, LlMn02 77 Lithium manganese oxide, LlMn20i(. ....... 78 Lithium titanium phosphate, LiTl2(POj,)2.. 79 Lithium tungsten oxide hydrate, 7Li2W0i,.i»H20 80 Magnesium, Mg. 82 iii " STANDARD X-RAY DIFFRACTION POWDER PATTERNS Publications Available . Previous work has
Recommended publications
  • Open Cyphersthesis FINAL.Pdf
    The Pennsylvania State University The Graduate School College of Engineering RESEARCH ON LOW FREQUENCY COMPOSITE TRANSDUCERS FABRICATED USING A SOL-GEL SPRAY-ON METHOD A Thesis in Engineering Science by Robert L. Cyphers c 2012 Robert L. Cyphers Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science December 2012 The thesis of Robert L. Cyphers was reviewed and approved∗ by the following: Bernhard R. Tittmann Schell Professor of Engineering Science and Mechanics Thesis Advisor Clifford Lissenden Professor of Engineering Science and Mechanics Mark W. Horn Professor of Engineering Science and Mechanics Judith A. Todd Professor of Engineering Science and Mechanics // P. B. Breneman Department Head Head of the Department of Engineering Science and Mechanics ∗Signatures are on file in the Graduate School. Abstract Ultrasonic nondestructive evaluation is currently used in countless applications to maintain a system's operational integrity. Piezoelectric transducers are the devices commonly used in this field to search for defects. A sol-gel fabrication method utilizing a spray-on deposition method has proven to produce ultrasonic transducers useful in harsh environments. This procedure produces thin film transducers, which adhere directly to a substrate making it favorable in use with irregular surface geometries. These transducers operate at relatively high frequencies due to their minute thickness. The objective of this research is to investigate the ability for low frequency operation into the low kilohertz range. Depositing thicker layers of piezoelectric composites, including bismuth titanate and lead zirconate titanate, led to adhesion problems between the metal substrates and ceramic material. Delamination of the piezoelectric elements was determined to be caused by a large mismatch in thermal expansion coefficients.
    [Show full text]
  • Magnesium Nitride (Mg3n2) Powder
    Magnesium Nitride (Mg3N2) Powder US Research Nanomaterials, Inc. www.us-nano.com SAFTY DATA SHEET Revised Date 12/12/2015 1. PRODUCT AND COMPANY IDENTIFICATION 1.1 Product identifiers Product name: Magnesium Nitride (Mg3N2) Powder Product Number : US1115M Magnesium Nitride (Mg3N2) CAS#: 12057-71-5 1.2 Relevant identified uses of the substance or mixture and uses advised against Identified uses : Research 1.3 Details of the supplier of the safety data sheet Company: US Research Nanomaterials, Inc. 3302 Twig Leaf Lane Houston, TX 77084 USA Telephone: +1 832-460-3661 Fax: +1 281-492-8628 1.4 Emergency telephone number Emergency Phone # : (832) 359-7887 2. HAZARDS IDENTIFICATION 2.1 Classification of the substance or mixture This chemical is considered hazardous by the 2012 OSHA Hazard Communication Standard (29 CFR 1910.1200) 2.2 GHS Label elements, including precautionary statements Pictogram Signal word Warning Hazard statement(s) H260: In contact with water releases flammable gas. H302: Harmful if swallowed. H312: Harmful in contact with skin. H315: Causes skin irritation. H319: Causes serious eye irritation. H332: Harmful if inhaled. H335: May cause respiratory irritation. Precautionary statement(s) P223 Keep away from any possible contact with water, because of violent reaction and possible flash fire. P231+P232 Handle under inert gas. Protect from moisture. P261 Avoid breathing dust/fume/gas/mist/vapors/spray. P280 Wear protective gloves/protective clothing/eye protection/face protection. P301+P312 IF SWALLOWED: Call a POISON CENTER or doctor/physician if you feel unwell. P302+P352 IF ON SKIN: Wash with plenty of soap and water. P304+P340 IF INHALED: Remove victim to fresh air and keep at rest in a position comfortable for breathing.
    [Show full text]
  • High Temperature Ultrasonic Transducers: a Review
    sensors Review High Temperature Ultrasonic Transducers: A Review Rymantas Kazys * and Vaida Vaskeliene Ultrasound Research Institute, Kaunas University of Technology, Barsausko st. 59, LT-51368 Kaunas, Lithuania; [email protected] * Correspondence: [email protected] Abstract: There are many fields such as online monitoring of manufacturing processes, non-destructive testing in nuclear plants, or corrosion rate monitoring techniques of steel pipes in which measure- ments must be performed at elevated temperatures. For that high temperature ultrasonic transducers are necessary. In the presented paper, a literature review on the main types of such transducers, piezoelectric materials, backings, and the bonding techniques of transducers elements suitable for high temperatures, is presented. In this review, the main focus is on ultrasonic transducers with piezoelectric elements suitable for operation at temperatures higher than of the most commercially available transducers, i.e., 150 ◦C. The main types of the ultrasonic transducers that are discussed are the transducers with thin protectors, which may serve as matching layers, transducers with high temperature delay lines, wedges, and waveguide type transducers. The piezoelectric materi- als suitable for high temperature applications such as aluminum nitride, lithium niobate, gallium orthophosphate, bismuth titanate, oxyborate crystals, lead metaniobate, and other piezoceramics are analyzed. Bonding techniques used for joining of the transducer elements such as joining with glue, soldering,
    [Show full text]
  • Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic
    Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino Submitted in Partial Fulfillment of the Requirements For the Degree of Master of Science in the Chemistry Program YOUNGSTOWN STATE UNIVERSITY December, 2017 Investigations of Mixed-Anion Analogs of Manganite Perovskites and Bimetallic Group II Nitride Fluorides By Oscar Kipruto Keino I hereby release this thesis to the public. I understand that this thesis will be made available from the Ohio LINK ETD Center and the Maag Library Circulation Desk for public access. I also authorize the University or other individuals to make copies of this thesis as needed for scholarly research. Signature: ________________________________________________________________ Oscar Kipruto Keino, Student Date Approvals: ________________________________________________________________ Dr. Timothy R. Wagner, Thesis Advisor Date ________________________________________________________________ Dr. Sherri Lovelace-Cameron, Committee Member Date ________________________________________________________________ Dr. Allen Hunter, Committee Member Date ________________________________________________________________ Dr. Salvatore A. Sanders, Date Dean, College of Graduate Studies iii ABSTRACT Lanthanum manganites are perovskite related materials known in particular for their colossal magnetoresistance (CM) properties. Manganite compositions showing CM behavior are mixed cation compounds such as (CaxLa1-x) MnO3, which contain Mn ions in mixed
    [Show full text]
  • (12) United States Patent (10) Patent No.: US 8,669,491 B2 Menon Et Al
    USOO86694.91 B2 (12) United States Patent (10) Patent No.: US 8,669,491 B2 Menon et al. (45) Date of Patent: Mar. 11, 2014 (54) HARD-FACING ALLOYS HAVING IMPROVED 4.331,857 A * 5/1982 Crisci et al. ........... 219,137 WM 4,396,822 A * 8/1983 Kishida et al. ........ 219,137 WM CRACK RESISTANCE 4,423,119 A * 12/1983 Brown et al. ................. 428,558 4,800,131. A * 1/1989 Marshall et al. .............. 428/558 (76) Inventors: Ravi Menon, Goodlettsville, TN (US); 4,810,850 A * 3/1989 Tenkula et al. ... 219,146.1 Jack Garry Wallin, Scottsville, KY 4,822,415 A * 4, 1989 Dorfman et al. ................ 420.61 4,897,519 A * 1/1990 Clarket al. ................ 219/76.14 SE Fusilouis LeClaire, Bowling 4,987.288 A * 1/1991 Yonker, Jr. ..... ... 219,146.1 reen, (US) 5,095,191 A * 3/1992 Bushey et al. ........ 219/137 WM 5, 192,016 A * 3/1993 Araki et al. ................... 228,147 (*) Notice: Subject to any disclaimer, the term of this 5,250,355 A * 10/1993 Newman et al. ... 428,367 patent is extended or adjusted under 35 3:23 A : 2. E. SNaga Ca.it al..."316 ....... wi U.S.C. 154(b) by 1394 days. 5,744,782 A * 4/1998 Sampath et al. ........... 219,146.1 6,124,569 A * 9/2000 Bonnet et al. ...... ... 219,146.1 (21) Appl. No.: 11/356,409 6.228,183 B1* 5/2001 Bangaru et al. ............... 148/320 6,521,060 B1* 2/2003 Kurata et al.
    [Show full text]
  • Redalyc.PHYSICAL-CHEMICAL PROPERTIES of BISMUTH AND
    Dyna ISSN: 0012-7353 [email protected] Universidad Nacional de Colombia Colombia BEDOYA HINCAPIÉ, CLAUDIA MILENA; PINZÓN CÁRDENAS, MANUEL JONATHAN; ALFONSO ORJUELA, JOSE EDGAR; RESTREPO PARRA, ELISABETH; OLAYA FLOREZ, JHON JAIRO PHYSICAL-CHEMICAL PROPERTIES OF BISMUTH AND BISMUTH OXIDES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS Dyna, vol. 79, núm. 176, diciembre, 2012, pp. 139-148 Universidad Nacional de Colombia Medellín, Colombia Available in: http://www.redalyc.org/articulo.oa?id=49624953018 How to cite Complete issue Scientific Information System More information about this article Network of Scientific Journals from Latin America, the Caribbean, Spain and Portugal Journal's homepage in redalyc.org Non-profit academic project, developed under the open access initiative PHYSICAL-CHEMICAL PROPERTIES OF BISMUTH AND BISMUTH OXIDES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS PROPIEDADES FÍSICO-QUÍMICAS DEL BISMUTO Y OXIDOS DE BISMUTO: SÍNTESIS, CARACTERIZACIÓN Y APLICACIONES CLAUDIA MILENA BEDOYA HINCAPIÉ Ing. Física, Universidad Nacional de Colombia – Sede Bogotá, [email protected] MANUEL JONATHAN PINZÓN CÁRDENAS Ing. Mecatrónico, Universidad Nacional de Colombia – Sede Bogotá, [email protected] JOSE EDGAR ALFONSO ORJUELA PhD. Física, Universidad Nacional de Colombia – Sede Bogotá, [email protected] ELISABETH RESTREPO PARRA PhD. Ingeniería, Universidad Nacional de Colombia - Sede Manizales, [email protected] JHON JAIRO OLAYA FLOREZ PhD. Materiales, Universidad Nacional de Colombia - Sede Bogotá, [email protected] Received for review March 10 th, 2012, accepted June 29th, 2012, final version July, 9 th, 2012 ABSTRACT: The physical-chemical properties of bismuth and its oxides have been studied over the last two decades. As a result of this research, the growth of these materials with different crystallographic structures, showing micro and nanometric dimensions has been achieved by using several techniques (cathodic pulverization, laser pulsed deposition and hydrothermal method, among others).
    [Show full text]
  • PVD Material Listing
    P. O. Box 639 NL - 5550 AP Valkenswaard Tel: +31 (0)40 204 69 31 Fergutec Fax: +31 (0)40 201 39 81 E - mail: [email protected] PVD Material Listing Pure Metals Aluminum, Al Antimony, Sb Beryllium, Be Bismuth, Bi Boron, B Cadmium, Cd Calcium, Ca Carbon, C Cerium, Ce Chromium, Cr Cobalt, Co Copper, Cu Erbium, Er Gadolinium, Gd Gallium, Ga Germanium, Ge Gold, Au Hafnium, Hf Indium, In Iridium, Ir Iron, Fe Lanthanum, La Lead, Pb Magnesium, Mg Manganese, Mn Molybdenum, Mo Neodymium, Nd Nickel, Ni Niobium, Nb Osmium, Os Palladium, Pd Platinum, Pt Praseodymium, Pr Rhenium, Re Rhodium, Rh Ruthenium, Ru Samarium, Sm Selenium, Se Silicon, Si Silver, Ag Tantalum, Ta Fergutec b.v. P.O. Box 639, NL - 5550 AP Valkenswaard Heistraat 64, NL - 5554 ER Valkenswaard Bankaccount 45.80.36.714 ABN - AMRO Valkenswaard C.o.C. Eindhoven no. 17098554 VAT - ID NL8095.60.185.B01 The Standard Terms and Conditions, lodged at the Chamber of Commerce in Eindhoven, are applicable to all transactions. Tellurium, Te Terbium, Tb Tin, Sn Titanium, Ti Tungsten, W Vanadium, V Ytterbium, Yb Yttrium, Y Zinc, Zn Zirconium, Zr Precious Metals Gold Antimony, Au/Sb Gold Arsenic, Au/As Gold Boron, Au/B Gold Copper, Au/Cu Gold Germanium, Au/Ge Gold Nickel, Au/Ni Gold Nickel Indium, Au/Ni/In Gold Palladium, Au/Pd Gold Phosphorus, Au/P Gold Silicon, Au/Si Gold Silver Platinum, Au/Ag/Pt Gold Tantalum, Au/Ta Gold Tin, Au/Sn Gold Zinc, Au/Zn Palladium Lithium, Pd/Li Palladium Manganese, Pd/Mn Palladium Nickel, Pd/Ni Platinum Palladium, Pt/Pd Palladium Rhenium, Pd/Re Platinum Rhodium,
    [Show full text]
  • University of Birmingham Synthesis of Ultra-Refractory Transition Metal
    University of Birmingham Synthesis of ultra-refractory transition metal diboride compounds Fahrenholtz, William G.; Binner, Jon; Zou, Ji DOI: 10.1557/jmr.2016.210 Document Version Peer reviewed version Citation for published version (Harvard): Fahrenholtz, WG, Binner, J & Zou, J 2016, 'Synthesis of ultra-refractory transition metal diboride compounds', Journal of Materials Research, vol. 31, no. 18, pp. 2757-2772. https://doi.org/10.1557/jmr.2016.210 Link to publication on Research at Birmingham portal Publisher Rights Statement: Checked for eligibility: 04/10/2016. COPYRIGHT: © Materials Research Society 2016 Fahrenholtz, W.G., Binner, J. and Zou, J. (2016) ‘Synthesis of ultra-refractory transition metal diboride compounds’, Journal of Materials Research, 31(18), pp. 2757–2772. doi: 10.1557/jmr.2016.210. https://www.cambridge.org/core/journals/journal-of-materials-research/article/synthesis-of-ultra-refractory-transition-metal-diboride- compounds/439AC30524D1F1E2970F306B038DD857 General rights Unless a licence is specified above, all rights (including copyright and moral rights) in this document are retained by the authors and/or the copyright holders. The express permission of the copyright holder must be obtained for any use of this material other than for purposes permitted by law. •Users may freely distribute the URL that is used to identify this publication. •Users may download and/or print one copy of the publication from the University of Birmingham research portal for the purpose of private study or non-commercial research. •User may use extracts from the document in line with the concept of ‘fair dealing’ under the Copyright, Designs and Patents Act 1988 (?) •Users may not further distribute the material nor use it for the purposes of commercial gain.
    [Show full text]
  • High Purity Inorganics
    High Purity Inorganics www.alfa.com INCLUDING: • Puratronic® High Purity Inorganics • Ultra Dry Anhydrous Materials • REacton® Rare Earth Products www.alfa.com Where Science Meets Service High Purity Inorganics from Alfa Aesar Known worldwide as a leading manufacturer of high purity inorganic compounds, Alfa Aesar produces thousands of distinct materials to exacting standards for research, development and production applications. Custom production and packaging services are part of our regular offering. Our brands are recognized for purity and quality and are backed up by technical and sales teams dedicated to providing the best service. This catalog contains only a selection of our wide range of high purity inorganic materials. Many more products from our full range of over 46,000 items are available in our main catalog or online at www.alfa.com. APPLICATION FOR INORGANICS High Purity Products for Crystal Growth Typically, materials are manufactured to 99.995+% purity levels (metals basis). All materials are manufactured to have suitably low chloride, nitrate, sulfate and water content. Products include: • Lutetium(III) oxide • Niobium(V) oxide • Potassium carbonate • Sodium fluoride • Thulium(III) oxide • Tungsten(VI) oxide About Us GLOBAL INVENTORY The majority of our high purity inorganic compounds and related products are available in research and development quantities from stock. We also supply most products from stock in semi-bulk or bulk quantities. Many are in regular production and are available in bulk for next day shipment. Our experience in manufacturing, sourcing and handling a wide range of products enables us to respond quickly and efficiently to your needs. CUSTOM SYNTHESIS We offer flexible custom manufacturing services with the assurance of quality and confidentiality.
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • Multi-Stage Synthesis of Magnesium Nitride Using an Atmospheric-Pressure Dielectric Barrier Discharge
    Int. J. Plasma Environ. Sci. Technol. 15 (2021) e02002 (6pp) Regular Paper DOI: 10.34343/ijpest.2021.15.e02002 Multi-stage synthesis of magnesium nitride using an atmospheric-pressure dielectric barrier discharge Shungo Zen*, Yingwen Huang, Nozomi Takeuchi Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-3, Ookayama, Meguro-ku, Tokyo, Japan * Corresponding author: [email protected] (Shungo Zen) Received: 18 March 2021 Revised: 8 May 2021 Accepted: 20 May 2021 Published online: 22 May 2021 Abstract A multi-stage dielectric barrier discharge (DBD) was used to elucidate the reaction pathway for synthesizing Mg3N2 from MgO, nitrogen, and hydrogen using atmospheric pressure plasma. Recently, ammonia has been considered as a promising carbon-free material for hydrogen storage and carrier owing to its high hydrogen density. However, the extensive use of ammonia as an energy carrier has problems with respect to transportation and storage because of its toxicity, odor, and combustibility. Therefore, we consider that Mg3N2 can solve these problems and focus on Mg3N2 synthesis by nitridation of MgO using a DBD in a N2 and H2 atmosphere instead of directly synthesizing ammonia. By investigating the Mg3N2 synthesis pathway using a multi-stage atmospheric pressure plasma, it is considered that H atoms and NH radicals reduce MgO and promote nitriding. Keywords: Ammonia carrier, dielectric barrier discharge, Mg3N2 synthesis, non-thermal plasma. 1. Introduction Owing to significant use of fossil fuel energy, environmental problems such as the greenhouse effect, acid rain, and smog are becoming severe [1]. Recognizing these issues has led to increased attention to renewable energy sources [2].
    [Show full text]
  • Tunable Light-Emission Through the Range 1.8–3.2 Ev and P-Type Conductivity at Room Temperature for Nitride Semiconductors, Ca(Mg1−Xznx)2N2 (X = 0 – 1)”
    Tunable light-emission through the range 1.8–3.2 eV and p-type conductivity at room temperature for nitride semiconductors, Ca(Mg1−xZnx)2N2 (x = 0 – 1) Masatake Tsuji,1 Hidenori Hiramatsu,1,2,a and Hideo Hosono1,2 1: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-3, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan 2: Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan a) Electronic mail: [email protected] 1 Abstract The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of ~1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap in a wide range from ~3.3 eV to ~1.9 eV for Ca(Mg1−xZnx)2N2 (x = 0–1). In this study, we demonstrate that a solid-state reaction at ambient pressure and a high-pressure synthesis at 5 GPa produce x = 0 and 0.12, and 0.12 < x 1 polycrystalline samples, respectively. It is experimentally confirmed that the optical band gap can be continuously tuned from ~3.2 eV to ~1.8 eV, a range very close to that predicted by theory. Band-to-band photoluminescence is observed at room temperature in the ultraviolet–red region depending on x. A 2% Na doping at the Ca site of CaZn2N2 converts its highly resistive state to a p-type conducting state.
    [Show full text]